Focal Surface Attitude Detection for LAMOST
Authors:
T. -Z Hu,
Y. Zhang,
X. -Q. Cui,
Y. -P. Li,
X. -S. Pan,
Y. Fu
Abstract:
With telescope apertures becoming larger and larger, the deployment of large-field telescopes is becoming increasingly popular. However, optical path calibration is necessary to ensure the image quality of large-field and large-diameter telescopes. In particular, focal plane attitude calibration is an essential optical path calibration technique that has a direct impact on image quality. In this p…
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With telescope apertures becoming larger and larger, the deployment of large-field telescopes is becoming increasingly popular. However, optical path calibration is necessary to ensure the image quality of large-field and large-diameter telescopes. In particular, focal plane attitude calibration is an essential optical path calibration technique that has a direct impact on image quality. In this paper, a focal plane attitude detection method using eight acquisition cameras is proposed based on the calibration requirements of the wide-field telescope, LAMOST. Comparison of simulation and experimental results shows that the detection accuracy of the proposed method can reach 30 arcsec. With additional testing and verification, this method could be used to facilitate regular focal plane attitude calibration for LAMOST as well as other large-field telescopes.
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Submitted 25 May, 2020;
originally announced May 2020.
Ab initio calculations of the structural, electronic and elastic properties of the MZN2 (M=Be, Mg; Z=C, Si) chalcopyrite semiconductors
Authors:
C. -G. Ma,
D. -X. Liu,
T. -P. Hu,
Y. Wang,
Y. Tian,
M. G. Brik
Abstract:
Four ternary semiconductors with the chalcopyrite structure (BeCN2, BeSiN2, MgCN2, and MgSiN2) were studied using the first principles methods. The structural, electronic, optical and elastic properties were calculated. All these materials were found to be the indirect band gap semiconductors, with the calculated band gaps in the range from 3.46 eV to 3.88 eV. Comparison of the degree of covalency…
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Four ternary semiconductors with the chalcopyrite structure (BeCN2, BeSiN2, MgCN2, and MgSiN2) were studied using the first principles methods. The structural, electronic, optical and elastic properties were calculated. All these materials were found to be the indirect band gap semiconductors, with the calculated band gaps in the range from 3.46 eV to 3.88 eV. Comparison of the degree of covalency/ionicity of the chemical bonds in these compounds was performed. Anisotropy of the optical properties of these tetragonal crystals was demonstrated by calculating the real and imaginary parts of the dielectric function ε. Anisotropy of the elastic properties of these materials was analyzed by plotting the three-dimensional dependences of the Young moduli and their two-dimensional cross-sections. It was also shown (at least, qualitatively) that there exists a correlation between the optical and elastic anisotropy: the most optically anisotropic MgSiN2 is also most elastically anisotropic material in the considered group. High hardness (bulk moduli up to 300 GPa) together with large band gaps may lead to new potential applications of these compounds.
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Submitted 17 April, 2015;
originally announced April 2015.
