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Selective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H-SiC
Authors:
Jonathan R. Dietz,
Aaron M. Day,
Amberly Xie,
Evelyn L. Hu
Abstract:
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness which makes complex micromachining difficult. Photoelectrochemical etching is…
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Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness which makes complex micromachining difficult. Photoelectrochemical etching is a simple, rapid means of wet processing SiC, including the use of dopant selective etch stops that take advantage of mature SiC homoepitaxy. However, dopant selective photoelectrochemical etching typically relies on highly doped material, which poses challenges for device applications such as quantum defects and photonics that benefit from low do** to produce robust emitter properties and high optical transparency. In this work, we develop a new, selective photoelectrochemical etching process that relies not on high do** but on the electrical depletion of a fabricated diode structure, allowing the selective etching of an n-doped substrate wafer versus an undoped epitaxial ($N_a=1(10)^{14}cm^{-3}$) device layer. We characterize the photo-response and photoelectrochemical etching behavior of the diode under bias and use those insights to suspend large ($>100μm^2$) undoped membranes of SiC. We further characterize the compatibility of membranes with quantum emitters, performing comparative spin spectroscopy between undoped and highly doped membrane structures, finding the use of undoped material improves ensemble spin lifetime by $>3x$. This work enables the fabrication of high-purity suspended thin films suitable for scalable photonics, mechanics, and quantum technologies in SiC.
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Submitted 11 June, 2024;
originally announced June 2024.
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Three Dimensional Reconfigurable Optical Singularities in Bilayer Photonic Crystals
Authors:
Xueqi Ni,
Yuan Liu,
Beicheng Lou,
Mingjie Zhang,
Evelyn L. Hu,
Shanhui Fan,
Eric Mazur,
Haoning Tang
Abstract:
Metasurfaces and photonic crystals have revolutionized classical and quantum manipulation of light, and opened the door to studying various optical singularities related to phases and polarization states. However, traditional nanophotonic devices lack reconfigurability, hindering the dynamic switching and optimization of optical singularities. This paper delves into the underexplored concept of tu…
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Metasurfaces and photonic crystals have revolutionized classical and quantum manipulation of light, and opened the door to studying various optical singularities related to phases and polarization states. However, traditional nanophotonic devices lack reconfigurability, hindering the dynamic switching and optimization of optical singularities. This paper delves into the underexplored concept of tunable bilayer photonic crystals (BPhCs), which offer rich interlayer coupling effects. Utilizing silicon nitride-based BPhCs, we demonstrate tunable bidirectional and unidirectional polarization singularities, along with spatiotemporal phase singularities. Leveraging these tunable singularities, we achieve dynamic modulation of bound-state-in-continuum states, unidirectional guided resonances, and both longitudinal and transverse orbital angular momentum. Our work paves the way for multidimensional control over polarization and phase, inspiring new directions in ultrafast optics, optoelectronics, and quantum optics.
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Submitted 20 November, 2023;
originally announced November 2023.
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Electrical Manipulation of Telecom Color Centers in Silicon
Authors:
Aaron M. Day,
Madison Sutula,
Jonathan R. Dietz,
Alexander Raun,
Denis D. Sukachev,
Mihir K. Bhaskar,
Evelyn L. Hu
Abstract:
Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble opti…
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Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.4 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.
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Submitted 14 November, 2023;
originally announced November 2023.
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Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities
Authors:
Aaron M. Day,
Jonathan R. Dietz,
Madison Sutula,
Matthew Yeh,
Evelyn L. Hu
Abstract:
High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in develo** scalable quantum network nodes. Ex-situ defect formation processes prevent real-time defect-cavity characterization, and previous in-situ methods require further processing to improve emitter properties or are limited to bulk substrates. We demonstrate direct laser-writing of cavity-int…
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High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in develo** scalable quantum network nodes. Ex-situ defect formation processes prevent real-time defect-cavity characterization, and previous in-situ methods require further processing to improve emitter properties or are limited to bulk substrates. We demonstrate direct laser-writing of cavity-integrated spin defects using a nanosecond-pulsed above-bandgap laser. Photonic crystal cavities in 4H-silicon carbide serve as a nanoscope monitoring silicon monovacancy (V$_{Si}^-$) defect formation within the $100~\text{nm}^3$ cavity mode volume. We observe defect spin resonance, cavity-integrated photoluminescence and excited-state lifetimes consistent with conventional defect formation methods, without need for post-irradiation thermal annealing. We further find an exponential reduction in excited-state lifetime at fluences approaching the cavity amorphization threshold, and show single-shot local annealing of the intrinsic background defects at the V$_{Si}^-$ formation sites. This real-time in-situ method of localized defect formation, paired with demonstration of cavity-integrated defect spins, marks an important step in engineering cavity-emitter coupling for quantum networking.
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Submitted 5 October, 2022; v1 submitted 30 September, 2022;
originally announced October 2022.
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Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide
Authors:
Jonathan R. Dietz,
Boyang Jiang,
Aaron M. Day,
Sunil A. Bhave,
Evelyn L. Hu
Abstract:
We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V$_{Si}^-$) in a high quality factor Lateral Overtone Bulk Acoustic Resonator fabricated out of high purity semi-insulating 4H-Silicon Carbide. We compare the frequency response of silicon monovacancies to a radio-frequency magnetic drive via optically-detected magnetic resona…
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We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V$_{Si}^-$) in a high quality factor Lateral Overtone Bulk Acoustic Resonator fabricated out of high purity semi-insulating 4H-Silicon Carbide. We compare the frequency response of silicon monovacancies to a radio-frequency magnetic drive via optically-detected magnetic resonance and the resonator's own radio-frequency acoustic drive via optically-detected spin acoustic resonance and observe a narrowing of the spin transition to nearly the linewidth of the driving acoustic resonance. We show that acoustic driving can be used at room temperature to induce coherent population oscillations. Spin acoustic resonance is then leveraged to perform stress metrology of the lateral overtone bulk acoustic resonator, showing for the first time the stress distribution inside a bulk acoustic wave resonator. Our work can be applied to the characterization of high quality-factor micro-electro-mechanical systems and has the potential to be extended to a mechanically addressable quantum memory.
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Submitted 30 May, 2022;
originally announced May 2022.
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Optical and Strain Stabilization of Point Defects in Silicon Carbide
Authors:
Jonathan R. Dietz,
Evelyn L. Hu
Abstract:
The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and cooling conditions. We find that the photoluminescence signal of an ensemble of implanted defects is enhanced in slab waveguides by an order of magnitude over identically implanted bulk defects. T…
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The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and cooling conditions. We find that the photoluminescence signal of an ensemble of implanted defects is enhanced in slab waveguides by an order of magnitude over identically implanted bulk defects. The slab waveguide-enhanced photoluminescence of several defect species is used to study recombination and diffusion in the presence of thermal annealing with both rapid quench cooling and a longer return to ambient conditions. The confined mechanical geometry of the thin film is exploited to measure the spin-strain coupling of the negatively charged silicon monovacancy. The methods in this work can be used to exercise greater control on near-surface emitters in silicon carbide and better understand and control the effects of strain on spin measurements of silicon carbide based color centers.
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Submitted 9 February, 2022;
originally announced February 2022.
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Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing
Authors:
Mena N. Gadalla,
Andrew S. Greenspon,
Rodrick Kuate Defo,
Xingyu Zhang,
Evelyn L. Hu
Abstract:
The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabric…
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The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{'}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^o C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{'}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^-$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^-$s. Above bandgap radiation is proposed to initially convert $V_{Si}^{0}$ to $V_{Si}^-$, but also may lead to diffusion of $V_{Si}^-$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions.
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Submitted 23 September, 2020; v1 submitted 25 August, 2020;
originally announced August 2020.
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Purcell enhancement of a single silicon carbide color center with coherent spin control
Authors:
A. L. Crook,
C. P. Anderson,
K. C. Miao,
A. Bourassa,
H. Lee,
S. L. Bayliss,
D. O. Bracher,
X. Zhang,
H. Abe,
T. Ohshima,
E. L. Hu,
D. D. Awschalom
Abstract:
Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic te…
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Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5,000. Subsequent coupling to a single divacancy leads to a Purcell factor of ~50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance towards scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.
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Submitted 28 February, 2020;
originally announced March 2020.
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Microwave-assisted spectroscopy technique for studying charge state in nitrogen-vacancy ensembles in diamond
Authors:
D. P. L. Aude Craik,
P. Kehayias,
A. S. Greenspon,
X. Zhang,
M. J. Turner,
J. M. Schloss,
E. Bauch,
C. A. Hart,
E. L. Hu,
R. L. Walsworth
Abstract:
We introduce a microwave-assisted spectroscopy technique to determine the relative concentrations of nitrogen vacancy (NV) centers in diamond that are negatively-charged (NV${}^-$) and neutrally-charged (NV${}^0$), and present its application to studying spin-dependent ionization in NV ensembles and enhancing NV-magnetometer sensitivity. Our technique is based on selectively modulating the NV…
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We introduce a microwave-assisted spectroscopy technique to determine the relative concentrations of nitrogen vacancy (NV) centers in diamond that are negatively-charged (NV${}^-$) and neutrally-charged (NV${}^0$), and present its application to studying spin-dependent ionization in NV ensembles and enhancing NV-magnetometer sensitivity. Our technique is based on selectively modulating the NV${}^-$ fluorescence with a spin-state-resonant microwave drive to isolate, in-situ, the spectral shape of the NV${}^-$ and NV${}^0$ contributions to an NV-ensemble sample's fluorescence. As well as serving as a reliable means to characterize charge state ratio, the method can be used as a tool to study spin-dependent ionization in NV ensembles. As an example, we applied the microwave technique to a high-NV-density diamond sample and found evidence for a new spin-dependent ionization pathway, which we present here alongside a rate-equation model of the data. We further show that our method can be used to enhance the contrast of optically-detected magnetic resonance (ODMR) on NV ensembles and may lead to significant sensitivity gains in NV magnetometers dominated by technical noise sources, especially where the NV${}^0$ population is large. With the high-NV-density diamond sample investigated here, we demonstrate up to a 4.8-fold enhancement in ODMR contrast. The techniques presented here may also be applied to other solid-state defects whose fluorescence can be selectively modulated by means of a microwave drive. We demonstrate this utility by applying our method to isolate room-temperature spectral signatures of the V2-type silicon vacancy from an ensemble of V1 and V2 silicon vacancies in 4H silicon carbide.
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Submitted 10 December, 2019; v1 submitted 5 November, 2018;
originally announced November 2018.
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Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
Authors:
David O. Bracher,
Xingyu Zhang,
Evelyn L. Hu
Abstract:
Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with e…
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Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.
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Submitted 13 September, 2016;
originally announced September 2016.
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Deterministic coupling of delta-doped NV centers to a nanobeam photonic crystal cavity
Authors:
Jonathan C. Lee,
David O. Bracher,
Shanying Cui,
Kenichi Ohno,
Claire A. McLellan,
Xingyu Zhang,
Paolo Andrich,
Benjamin Aleman,
Kasey J. Russell,
Andrew P. Magyar,
Igor Aharonovich,
Ania Bleszynski Jayich,
David Awschalom,
Evelyn L. Hu
Abstract:
The negatively-charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For most applications, high quality optical cavities are required to enhance the NV zero-phonon line (ZPL) emission. An outstanding challenge in maximizing the degree of NV-cavity coupling is the deterministic placement o…
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The negatively-charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For most applications, high quality optical cavities are required to enhance the NV zero-phonon line (ZPL) emission. An outstanding challenge in maximizing the degree of NV-cavity coupling is the deterministic placement of NVs within the cavity. Here, we report photonic crystal nanobeam cavities coupled to NVs incorporated by a delta-do** technique that allows nanometer-scale vertical positioning of the emitters. We demonstrate cavities with Q up to ~24,000 and mode volume V ~ $0.47(λ/n)^{3}$ as well as resonant enhancement of the ZPL of an NV ensemble with Purcell factor of ~20. Our fabrication technique provides a first step towards deterministic NV-cavity coupling using spatial control of the emitters.
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Submitted 3 November, 2014;
originally announced November 2014.
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Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities
Authors:
Alexander Woolf,
Tim Puchtler,
Igor Aharonovich,
Tongtong Zhu,
Nan Niu,
Danqing Wang,
Rachel A. Oliver,
Evelyn L. Hu
Abstract:
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in…
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Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems, but also shed insight into the more fundamental issues of light matter coupling in such systems.
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Submitted 28 July, 2014; v1 submitted 21 July, 2014;
originally announced July 2014.
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Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Marker in the Near Infrared
Authors:
Huiliang Zhang,
Igor Aharonovich,
David R. Glenn,
R. Schalek,
Andrew P. Magyar,
Jeff W. Lichtman,
Evelyn L. Hu,
Ronald L. Walsworth
Abstract:
We demonstrate that nanodiamonds fabricated to incorporate silicon-vacancy (Si-V) color centers provide bright, spectrally narrow, and stable cathodoluminescence (CL) in the near-infrared. Si-V color centers containing nanodiamonds are promising as non-bleaching optical markers for correlated CL and secondary electron microscopy, including applications to nanoscale bioimaging.
We demonstrate that nanodiamonds fabricated to incorporate silicon-vacancy (Si-V) color centers provide bright, spectrally narrow, and stable cathodoluminescence (CL) in the near-infrared. Si-V color centers containing nanodiamonds are promising as non-bleaching optical markers for correlated CL and secondary electron microscopy, including applications to nanoscale bioimaging.
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Submitted 20 September, 2013;
originally announced September 2013.
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Bottom-up Engineering of Diamond Nanostructures
Authors:
Igor Aharonovich,
Jonathan C. Lee,
Andrew P. Magyar,
David O. Bracher,
Evelyn L. Hu
Abstract:
Engineering nanostructures from the bottom up enables the creation of carefully engineered complex structures that are not accessible via top down fabrication techniques, in particular, complex periodic structures for applications in photonics and sensing. In this work, we propose and demonstrate a bottom up approach that can be adopted and utilized to controllably build diamond nanostructures. A…
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Engineering nanostructures from the bottom up enables the creation of carefully engineered complex structures that are not accessible via top down fabrication techniques, in particular, complex periodic structures for applications in photonics and sensing. In this work, we propose and demonstrate a bottom up approach that can be adopted and utilized to controllably build diamond nanostructures. A realization of periodic structures and optical wave-guiding is achieved by growing nanoscale single crystal diamond through a defined pattern.
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Submitted 1 September, 2013;
originally announced September 2013.
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Effect of fluorinated diamond surface on charge state of nitrogen-vacancy centers
Authors:
Shanying Cui,
Evelyn L. Hu
Abstract:
We investigated the effect of fluorine-terminated diamond surface on the charged state of shallow nitrogen vacancy defect centers (NVs). Fluorination is achieved with CF4 plasma and the surface chemistry is confirmed with x-ray photoemission spectroscopy. Photoluminescence of these ensemble NVs reveal that fluorine-treated surfaces lead to a higher negatively charged nitrogen vacancy (NV-) populat…
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We investigated the effect of fluorine-terminated diamond surface on the charged state of shallow nitrogen vacancy defect centers (NVs). Fluorination is achieved with CF4 plasma and the surface chemistry is confirmed with x-ray photoemission spectroscopy. Photoluminescence of these ensemble NVs reveal that fluorine-treated surfaces lead to a higher negatively charged nitrogen vacancy (NV-) population than oxygen-terminated surfaces. Using surface chemistry to control NV charges, in particular increasing the density of NV- centers, is an important step towards improving the optical and spin properties of NVs for quantum information processing and magnetic sensing.
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Submitted 4 April, 2013;
originally announced April 2013.
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Photoluminescent SiC tetrapods
Authors:
Andrew P. Magyar,
Igor Aharonovich,
Mor Baram,
Evelyn L. Hu
Abstract:
Recently, significant research efforts have been made to develop complex nanostructures to provide more sophisticated control over the optical and electronic properties of nanomaterials. However, there are only a handful of semiconductors which allow control over their geometry via simple chemical processes. Here, we present a molecularly seeded synthesis of a complex nanostructure, SiC tetrapods,…
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Recently, significant research efforts have been made to develop complex nanostructures to provide more sophisticated control over the optical and electronic properties of nanomaterials. However, there are only a handful of semiconductors which allow control over their geometry via simple chemical processes. Here, we present a molecularly seeded synthesis of a complex nanostructure, SiC tetrapods, and report on their structural and optical properties. The SiC tetrapods exhibit narrow linewidth photoluminescence at wavelengths spanning the visible to near infrared spectral range. Synthesized from low-toxicity, earth abundant elements, these tetrapods are a compelling replacement for technologically important quantum optical materials that frequently require toxic metals such as Cd and Se. This new, previously unknown geometry of SiC nanostructures is a compelling platform for biolabeling, sensing, spintronics and optoelectronics.
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Submitted 7 January, 2013; v1 submitted 28 November, 2012;
originally announced November 2012.
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Fabrication of thin diamond membranes for photonic applications
Authors:
Jonathan C. Lee,
Andrew P. Magyar,
David O. Bracher,
Igor Aharonovich,
Evelyn L. Hu
Abstract:
High quality, thin diamond membranes containing nitrogen-vacancy centers provide critical advantages in the fabrication of diamond-based structures for a variety of applications, including wide field magnetometry, photonics and bio-sensing. In this work we describe, in detail, the generation of thin, optically-active diamond membranes by means of ion implantation and overgrowth. To establish the s…
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High quality, thin diamond membranes containing nitrogen-vacancy centers provide critical advantages in the fabrication of diamond-based structures for a variety of applications, including wide field magnetometry, photonics and bio-sensing. In this work we describe, in detail, the generation of thin, optically-active diamond membranes by means of ion implantation and overgrowth. To establish the suitability of our method for photonic applications, photonic crystal cavities with quality factor of 1000 are fabricated.
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Submitted 29 September, 2012;
originally announced October 2012.
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Low threshold, room-temperature microdisk lasers in the blue spectral range
Authors:
Igor Aharonovich,
Alexander Woolf,
Kasey J. Russell,
Tongtong Zhu,
Menno J. Kappers,
Rachel A. Oliver,
Evelyn L. Hu
Abstract:
InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs…
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InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity.
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Submitted 31 August, 2012;
originally announced August 2012.
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A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity
Authors:
Nan Niu,
Tsung-Li Liu,
Igor Aharonovich,
Kasey J. Russell,
Alexander Woolf,
Thomas C. Sadler,
Haitham A. R. El-Ella,
Menno J. Kappers,
Rachel A. Oliver,
Evelyn L. Hu
Abstract:
Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is pro…
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Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics.
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Submitted 23 June, 2012;
originally announced June 2012.
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Coupling of silicon-vacancy centers to a single crystal diamond cavity
Authors:
Jonathan C. Lee,
Igor Aharonovich,
Andrew P. Magyar,
Fabian Rol,
Evelyn L. Hu
Abstract:
Optical coupling of an ensemble of silicon-vacancy (SiV) centers to single-crystal diamond microdisk cavities is demonstrated. The cavities are fabricated from a single-crystal diamond membrane generated by ion implantation and, electrochemical liftoff followed by homo-epitaxial overgrowth. Whispering gallery modes which spectrally overlap with the zero-phonon line (ZPL) of the SiV centers and exh…
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Optical coupling of an ensemble of silicon-vacancy (SiV) centers to single-crystal diamond microdisk cavities is demonstrated. The cavities are fabricated from a single-crystal diamond membrane generated by ion implantation and, electrochemical liftoff followed by homo-epitaxial overgrowth. Whispering gallery modes which spectrally overlap with the zero-phonon line (ZPL) of the SiV centers and exhibit quality factors ~2200 are measured. Lifetime reduction from 1.8 ns to 1.48 ns is observed from SiV centers in the cavity compared to those in the membrane outside the cavity. These results are pivotal in develo** diamond integrated photonics networks.
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Submitted 29 November, 2011;
originally announced November 2011.
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Ultrafast all-optical switching by single photons
Authors:
Thomas Volz,
Andreas Reinhard,
Martin Winger,
Antonio Badolato,
Kevin J. Hennessy,
Evelyn L. Hu,
Atac Imamoglu
Abstract:
An outstanding goal in quantum optics is the realization of fast optical non-linearities at the single-photon level. Such non-linearities would allow for the realization of optical devices with new functionalities such as a single-photon switch/transistor or a controlled-phase gate, which could form the basis of future quantum optical technologies. While non-linear optics effects at the single-emi…
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An outstanding goal in quantum optics is the realization of fast optical non-linearities at the single-photon level. Such non-linearities would allow for the realization of optical devices with new functionalities such as a single-photon switch/transistor or a controlled-phase gate, which could form the basis of future quantum optical technologies. While non-linear optics effects at the single-emitter level have been demonstrated in different systems, including atoms coupled to Fabry-Perot or toroidal micro-cavities, super-conducting qubits in strip-line resonators or quantum dots (QDs) in nano-cavities, none of these experiments so far has demonstrated single-photon switching on ultrafast timescales. Here, we demonstrate that in a strongly coupled QD-cavity system the presence of a single photon on one of the fundamental polariton transitions can turn on light scattering on a transition from the first to the second Jaynes-Cummings manifold with a switching time of 20 ps. As an additional device application, we use this non-linearity to implement a single-photon pulse-correlator. Our QD-cavity system could form the building-block of future high-bandwidth photonic networks operating in the quantum regime.
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Submitted 12 November, 2011;
originally announced November 2011.
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Separating enhancement from loss: plasmonic nanocavities in the weak coupling regime
Authors:
Kasey J. Russell,
Tsung-Li Liu,
Shanying Cui,
Evelyn L. Hu
Abstract:
By modifying the density of optical states at the location of an emitter, weak cavity-emitter coupling can enable a host of potential applications in quantum optics, from the development of low- threshold lasers to brighter single-photon sources for quantum cryptography. Although some of the first demonstrations of spontaneous emission modification occurred in metallic structures, it was only afte…
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By modifying the density of optical states at the location of an emitter, weak cavity-emitter coupling can enable a host of potential applications in quantum optics, from the development of low- threshold lasers to brighter single-photon sources for quantum cryptography. Although some of the first demonstrations of spontaneous emission modification occurred in metallic structures, it was only after the recent demonstration of cavity quantum electrodynamics effects in dielectric optical cavities that metal-based optical cavities were considered for quantum optics applications. Advantages of metal-optical cavities include their compatibility with a large variety of emitters and their broadband cavity spectra, which enable enhancement of spectrally-broad emitters. Here, we demonstrate a metal- based nanocavity structure that achieves radiative emission rate enhancements of 1000, opening up the possibility of pursuing cavity electrodynamics investigations with intrinsically broad optical emitters, including organic dyes and colloidal quantum dots.
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Submitted 1 November, 2011;
originally announced November 2011.
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Homoepitaxial Growth of Single Crystal Diamond Membranes for Quantum Information Processing
Authors:
Igor Aharonovich,
Jonathan C. Lee,
Andrew P. Magyar,
Bob B. Buckley,
Christopher G. Yale,
David D. Awschalom,
Evelyn L. Hu
Abstract:
Fabrication of devices designed to fully harness the unique properties of quantum mechanics through their coupling to quantum bits (qubits) is a prominent goal in the field of quantum information processing (QIP). Among various qubit candidates, nitrogen vacancy (NV) centers in diamond have recently emerged as an outstanding platform for room temperature QIP. However, formidable challenges still r…
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Fabrication of devices designed to fully harness the unique properties of quantum mechanics through their coupling to quantum bits (qubits) is a prominent goal in the field of quantum information processing (QIP). Among various qubit candidates, nitrogen vacancy (NV) centers in diamond have recently emerged as an outstanding platform for room temperature QIP. However, formidable challenges still remain in processing diamond and in the fabrication of thin diamond membranes, which are necessary for planar photonic device engineering. Here we demonstrate epitaxial growth of single crystal diamond membranes using a conventional microwave chemical vapor deposition (CVD) technique. The grown membranes, only a few hundred nanometers thick, show bright luminescence, excellent Raman signature and good NV center electronic spin coherence times. Microdisk cavities fabricated from these membranes exhibit quality factors of up to 3000, overlap** with NV center emission. Our methodology offers a scalable approach for diamond device fabrication for photonics, spintronics, optomechanics and sensing applications.
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Submitted 17 January, 2012; v1 submitted 26 September, 2011;
originally announced September 2011.
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Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities
Authors:
Igor Aharonovich,
Nan Niu,
Fabian Rol,
Kasey J Russell,
Alexander Woolf,
Haitham A. R. El-Ella,
Menno J. Kappers,
Rachel A Oliver,
Evelyn L. Hu
Abstract:
Controlled tuning of the whispering gallery modes of GaN/InGaN μ-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the μ-disks in water and irradiating with ultraviolet (UV) laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (~ several μW). T…
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Controlled tuning of the whispering gallery modes of GaN/InGaN μ-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the μ-disks in water and irradiating with ultraviolet (UV) laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (~ several μW). The selective oxidation mechanism is proposed to explain the results and supported by theoretical analysis. The tuning of WGMs in GaN/InGaN μ-disk cavities may have important implication in cavity quantum electrodynamics and the development of efficient light emitting devices.
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Submitted 23 August, 2011;
originally announced August 2011.
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Strongly correlated photons on a chip
Authors:
Andreas Reinhard,
Thomas Volz,
Martin Winger,
Antonio Badolato,
Kevin J. Hennessy,
Evelyn L. Hu,
Atac Imamoglu
Abstract:
Optical non-linearities at the single-photon level are key ingredients for future photonic quantum technologies. Prime candidates for the realization of strong photon-photon interactions necessary for implementing quantum information processing tasks as well as for studying strongly correlated photons in an integrated photonic device setting are quantum dots embedded in photonic crystal nanocaviti…
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Optical non-linearities at the single-photon level are key ingredients for future photonic quantum technologies. Prime candidates for the realization of strong photon-photon interactions necessary for implementing quantum information processing tasks as well as for studying strongly correlated photons in an integrated photonic device setting are quantum dots embedded in photonic crystal nanocavities. Here, we report strong quantum correlations between photons on picosecond timescales. We observe (a) photon antibunching upon resonant excitation of the lowest-energy polariton state, proving that the first cavity photon blocks the subsequent injection events, and (b) photon bunching when the laser field is in two-photon resonance with the polariton eigenstates of the second Jaynes-Cummings manifold, demonstrating that two photons at this color are more likely to be injected into the cavity jointly, than they would otherwise. Together,these results demonstrate unprecedented strong single-photon non-linearities, paving the way for realizing a single-photon transistor or a quantum optical Josephson interferometer.
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Submitted 15 August, 2011;
originally announced August 2011.
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Fabrication of Thin, Luminescent, Single-crystal Diamond Membranes
Authors:
Andrew P. Magyar,
Jonathan C. Lee,
Andi M. Limarga,
Igor Aharonovich,
Fabian Rol,
David R. Clarke,
Mengbing Huang,
Evelyn L. Hu
Abstract:
The formation of single-crystal diamond membranes is an important prerequisite for the fabrication of high-quality optical cavities in this material. Diamond membranes fabricated using lift-off processes involving the creation of a damaged layer through ion implantation often suffer from residual ion damage, which severely limits their usefulness for photonic structures. The current work demonstra…
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The formation of single-crystal diamond membranes is an important prerequisite for the fabrication of high-quality optical cavities in this material. Diamond membranes fabricated using lift-off processes involving the creation of a damaged layer through ion implantation often suffer from residual ion damage, which severely limits their usefulness for photonic structures. The current work demonstrates that strategic etch removal of the most highly defective material yields thin, single-crystal diamond membranes with strong photoluminescence and a Raman signature approaching that of single-crystal bulk diamond. These optically-active membranes can form the starting point for fabrication of high-quality optical resonators.
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Submitted 3 August, 2011;
originally announced August 2011.
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Quantum nature of a strongly-coupled single quantum dot-cavity system
Authors:
K. Hennessy,
A. Badolato,
M. Winger,
D. Gerace,
M. Atature,
S. Gulde,
S. Falt,
E. L. Hu,
A. Imamoglu
Abstract:
Cavity quantum electrodynamics (QED) studies the interaction between a quantum emitter and a single radiation-field mode. When an atom is in strong coupling with a cavity mode1,2, it is possible to realize key quantum information processing (QIP) tasks, such as controlled coherent coupling and entanglement of distinguishable quantum systems. Realizing these tasks in the solid state is clearly de…
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Cavity quantum electrodynamics (QED) studies the interaction between a quantum emitter and a single radiation-field mode. When an atom is in strong coupling with a cavity mode1,2, it is possible to realize key quantum information processing (QIP) tasks, such as controlled coherent coupling and entanglement of distinguishable quantum systems. Realizing these tasks in the solid state is clearly desirable, and coupling semiconductor self-assembled quantum dots (QDs) to monolithic optical cavities is a promising route to this end. However, validating the efficacy of QDs in QIP applications requires confirmation of the quantum nature of the QD-cavity system in the strong coupling regime. Here we find a confirmation by observing quantum correlations in photoluminescence (PL) from a photonic crystal (PC) nanocavity3-5 interacting with one, and only one, QD located precisely at the cavity electric field maximum. When off-resonance, photon emission from the cavity mode and QD excitons is anti-correlated at the level of single quanta, proving that the mode is driven solely by the QD despite an energy mis-match between cavity and excitons. When tuned into resonance, the exciton and photon enter the strong-coupling regime of cavity-QED and the QD lifetime reduces by a factor of 120. The photon stream from the cavity becomes anti-bunched, proving that the coupled exciton/photon system is in the quantum anharmonic regime. Our observations unequivocally show that QIP tasks requiring the quantum nonlinear regime are achievable in the solid state.
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Submitted 5 October, 2006;
originally announced October 2006.
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Validation of Lasing in Active Nanocavities
Authors:
Yong-Seok Choi,
Matthew T. Rakher,
Kevin Hennessy,
Stefan Strauf,
Antonio Badolato,
Pierre M. Petroff,
Dirk Bouwmeester,
Evelyn L. Hu
Abstract:
An unambiguous proof of lasing in an active nanocavity with ultrahigh spontaneous emission coupling factor (beta = 0.65) is presented. To distinguish the subtle lasing threshold features from possible material-related phenomena, such as saturable absorption in the gain medium, a series of active nanocavities with different values of beta have been designed to systematically approach the high-bet…
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An unambiguous proof of lasing in an active nanocavity with ultrahigh spontaneous emission coupling factor (beta = 0.65) is presented. To distinguish the subtle lasing threshold features from possible material-related phenomena, such as saturable absorption in the gain medium, a series of active nanocavities with different values of beta have been designed to systematically approach the high-beta device. The demonstration of the lasing threshold is obtained through the observation of the transition from thermal to coherent light photon statistics that is well understood and identified in the beta << 1 lasing regime. The systematic investigation allows a more definitive validation of the onset of lasing in these active nanocavities.
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Submitted 24 January, 2006; v1 submitted 24 January, 2006;
originally announced January 2006.
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Self-tuned quantum dot gain in photonic crystal lasers
Authors:
S. Strauf,
K. Hennessy,
M. T. Rakher,
Y. -S. Choi,
A. Badolato,
L. C. Andreani,
E. L. Hu,
P. M. Petroff,
D. Bouwmeester
Abstract:
We demonstrate that very few (1 to 3) quantum dots as a gain medium are sufficient to realize a photonic crystal laser based on a high-quality nanocavity. Photon correlation measurements show a transition from a thermal to a coherent light state proving that lasing action occurs at ultra-low thresholds. Observation of lasing is unexpected since the cavity mode is in general not resonant with the…
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We demonstrate that very few (1 to 3) quantum dots as a gain medium are sufficient to realize a photonic crystal laser based on a high-quality nanocavity. Photon correlation measurements show a transition from a thermal to a coherent light state proving that lasing action occurs at ultra-low thresholds. Observation of lasing is unexpected since the cavity mode is in general not resonant with the discrete quantum dot states and emission at those frequencies is suppressed. In this situation, the quasi-continuous quantum dot states become crucial since they provide an energy-transfer channel into the lasing mode, effectively leading to a self-tuned resonance for the gain medium.
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Submitted 20 November, 2005;
originally announced November 2005.
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Frequency control of photonic crystal membrane resonators by mono-layer deposition
Authors:
Stefan Strauf,
Matthew T. Rakher,
Itai Carmeli,
Kevin Hennessy,
Cedrik Meier,
Antonio Badolato,
Michiel J. A. DeDood,
Pierre M. Petroff,
Evelyn L. Hu,
Beth Gwynn,
Dirk Bouwmeester
Abstract:
We study the response of GaAs photonic crystal membrane resonators to thin film deposition. Slow spectral shifts of the cavity mode of several nanometers are observed at low temperatures, caused by cryo-gettering of background molecules. Heating the membrane resets the drift and shielding will prevent drift altogether. In order to explore the drift as a tool to detect surface layers, or to inten…
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We study the response of GaAs photonic crystal membrane resonators to thin film deposition. Slow spectral shifts of the cavity mode of several nanometers are observed at low temperatures, caused by cryo-gettering of background molecules. Heating the membrane resets the drift and shielding will prevent drift altogether. In order to explore the drift as a tool to detect surface layers, or to intentionally shift the cavity resonance frequency, we studied the effect of self-assembled monolayers of polypeptide molecules attached to the membranes. The 2 nm thick monolayers lead to a discrete step in the resonance frequency and partially passivate the surface.
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Submitted 11 August, 2005;
originally announced August 2005.
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Spin dynamics in electrochemically charged CdSe quantum dots
Authors:
N. P. Stern,
M. Poggio,
M. H. Bartl,
E. L. Hu,
G. D. Stucky,
D. D. Awschalom
Abstract:
We use time-resolved Faraday rotation to measure coherent spin dynamics in colloidal CdSe quantum dots charged in an electrochemical cell at room temperature. Filling of the 1Se electron level is demonstrated by the bleaching of the 1Se-1S3/2 absorption peak. One of the two Lande g-factors observed in uncharged quantum dots disappears upon filling of the 1Se electron state. The transverse spin c…
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We use time-resolved Faraday rotation to measure coherent spin dynamics in colloidal CdSe quantum dots charged in an electrochemical cell at room temperature. Filling of the 1Se electron level is demonstrated by the bleaching of the 1Se-1S3/2 absorption peak. One of the two Lande g-factors observed in uncharged quantum dots disappears upon filling of the 1Se electron state. The transverse spin coherence time, which is over 1 ns and is limited by inhomogeneous dephasing, also appears to increase with charging voltage. The amplitude of the spin precession signal peaks near the half-filling potential. Its evolution at charging potentials without any observable bleaching of the 1Se-1S3/2 transition suggests that the spin dynamics are influenced by low-energy surface states.
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Submitted 28 July, 2005;
originally announced July 2005.
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Photon statistics from coupled quantum dots
Authors:
Brian D. Gerardot,
Stefan Strauf,
Michiel J. A. de Dood,
Andrey M. Bychkov,
Antonio Badolato,
Kevin Hennessy,
Evelyn L. Hu,
Dirk Bouwmeester,
Pierre M. Petroff
Abstract:
We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the quantum dots but also insight into the coupling mechanism. Our results are in agreement with recent theories predicting that tunneling is largely suppressed between…
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We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the quantum dots but also insight into the coupling mechanism. Our results are in agreement with recent theories predicting that tunneling is largely suppressed between nonidentical quantum dots and that the interaction is instead dominated by dipole-dipole coupling and phonon-assisted energy transfer processes.
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Submitted 25 July, 2005;
originally announced July 2005.
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Coherent coupling dynamics in a quantum dot microdisk laser
Authors:
D. K. Young,
L. Zhang,
D. D. Awschalom,
E. L. Hu
Abstract:
Luminescence intensity autocorrelation (LIA) is employed to investigate coupling dynamics between (In,Ga)As QDs and a high-Q (~7000) resonator with ultrafast time resolution (150 fs), below and above the lasing threshold at T = 5 K. For QDs resonant and non-resonant with the cavity we observe both a six-fold enhancement and a 0.77 times reduction of the spontaneous emission rate, respectively. I…
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Luminescence intensity autocorrelation (LIA) is employed to investigate coupling dynamics between (In,Ga)As QDs and a high-Q (~7000) resonator with ultrafast time resolution (150 fs), below and above the lasing threshold at T = 5 K. For QDs resonant and non-resonant with the cavity we observe both a six-fold enhancement and a 0.77 times reduction of the spontaneous emission rate, respectively. In addition, LIA spectroscopy reveals the onset of coherent coupling at the lasing threshold through qualitative changes in the dynamic behavior and a tripling of the resonant QD emission rate.
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Submitted 5 June, 2002;
originally announced June 2002.
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Nonequilibrium ac Josephson effect in mesoscopic Nb-InAs-Nb junctions
Authors:
K. W. Lehnert,
N. Argaman,
H. -R. Blank,
K. C. Wong,
S. J. Allen,
E. L. Hu,
H. Kroemer
Abstract:
Microwave irradiation of Nb-InAs-Nb junctions reveals frequency-doubled Josephson currents which persist to high temperatures, in the absence of a critical current. A nonequilibrium dynamical model, based on time-dependent Andreev bound states, successfully accounts for the resulting half-integer Shapiro step and an enhancement in the conductance near zero bias.
Microwave irradiation of Nb-InAs-Nb junctions reveals frequency-doubled Josephson currents which persist to high temperatures, in the absence of a critical current. A nonequilibrium dynamical model, based on time-dependent Andreev bound states, successfully accounts for the resulting half-integer Shapiro step and an enhancement in the conductance near zero bias.
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Submitted 2 January, 1999;
originally announced January 1999.
