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Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$
Authors:
Fatima Alarab,
Karol Hricovini,
Berengar Leikert,
Christine Richter,
Thorsten Schmitt,
Michael Sing,
Ralph Claessen,
Ján Minár,
Vladimir N. Strocov
Abstract:
Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni do** shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-do**) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (…
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Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni do** shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-do**) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (MES). Thereby, the in-plane dxy-derived bands reduce the embedded electron density, as evidenced by progressive reduction of their Fermi momentum with the Ni concentration, and the out-of-plane dxz/yz-derived bands depopulate, making the MES purely two-dimensional. Furthermore, the Ti and Ni L2,3-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum, and decipher the full spectrum of the VO-induced in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES and in-gap states in Ni-doped SrTiO$_3$ may help development of this material towards its device applications associated with the reduced optical band gap.
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Submitted 19 October, 2023;
originally announced October 2023.
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Ultrafast Hidden Spin Polarization Dynamics of Bright and Dark Excitons in 2H-WSe$_2$
Authors:
Mauro Fanciulli,
David Bresteau,
Jérome Gaudin,
Shuo Dong,
Romain Géneaux,
Thierry Ruchon,
Olivier Tcherbakoff,
Ján Minár,
Olivier Heckmann,
Maria Christine Richter,
Karol Hricovini,
Samuel Beaulieu
Abstract:
We performed spin-, time- and angle-resolved extreme ultraviolet photoemission spectroscopy (STARPES) of excitons prepared by photoexcitation of inversion-symmetric 2H-WSe$_2$ with circularly polarized light. The very short probing depth of XUV photoemission permits selective measurement of photoelectrons originating from the top-most WSe$_2$ layer, allowing for direct measurement of hidden spin p…
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We performed spin-, time- and angle-resolved extreme ultraviolet photoemission spectroscopy (STARPES) of excitons prepared by photoexcitation of inversion-symmetric 2H-WSe$_2$ with circularly polarized light. The very short probing depth of XUV photoemission permits selective measurement of photoelectrons originating from the top-most WSe$_2$ layer, allowing for direct measurement of hidden spin polarization of bright and momentum-forbidden dark excitons. Our results reveal efficient chiroptical control of bright excitons' hidden spin polarization. Following optical photoexcitation, intervalley scattering between nonequivalent K-K' valleys leads to a decay of bright excitons' hidden spin polarization. Conversely, the ultrafast formation of momentum-forbidden dark excitons acts as a local spin polarization reservoir, which could be used for spin injection in van der Waals heterostructures involving multilayer transition metal dichalcogenides.
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Submitted 18 July, 2023; v1 submitted 6 June, 2023;
originally announced June 2023.
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Towards Exotic Layered Materials: 2D Cuprous Iodide
Authors:
Kimmo Mustonen,
Christoph Hofer,
Peter Kotrusz,
Alexander Markevich,
Martin Hulman,
Clemens Mangler,
Toma Susi,
Timothy J. Pennycook,
Karol Hricovini,
Christine M. Richter,
Jannik C. Meyer,
Jani Kotakoski,
Viera Skakalova
Abstract:
Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the lar…
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Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the large number of layered materials that may exist in other temperatures and pressures. Here, we demonstrate how these structures can be stabilized in 2D van der Waals stacks under room temperature via growing them directly in graphene encapsulation by using graphene oxide as the template material. Specifically, we produce an ambient stable 2D structure of copper and iodine, a material that normally only occurs in layered form at elevated temperatures between 645 and 675 K. Our results establish a route to the production of more exotic phases of materials that would otherwise be difficult or impossible to stabilize for experiments in ambient.
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Submitted 3 December, 2021; v1 submitted 17 September, 2021;
originally announced September 2021.
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Fermiology and electron-phonon coupling in the 2H and 3R polytypes of NbS$\boldsymbol{_2}$
Authors:
Zakariae El Youbi,
Sung Won Jung,
Christine Richter,
Karol Hricovini,
Cephise Cacho,
Matthew D. Watson
Abstract:
We investigate the electronic structure of the 2H and 3R polytypes of NbS$_2$. The Fermi surfaces measured by angle-resolved photoemission spectroscopy show a remarkable difference in size, reflecting a significantly increased band filling in 3R-Nb$_{1+x}$S$_2$ compared to 2H-NbS$_2$, which we attribute to the presence of additional interstitial Nb which act as electron donors. Thus we find that t…
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We investigate the electronic structure of the 2H and 3R polytypes of NbS$_2$. The Fermi surfaces measured by angle-resolved photoemission spectroscopy show a remarkable difference in size, reflecting a significantly increased band filling in 3R-Nb$_{1+x}$S$_2$ compared to 2H-NbS$_2$, which we attribute to the presence of additional interstitial Nb which act as electron donors. Thus we find that the stoichiometry, rather than the stacking arrangement, is the most important factor in the difference in electronic and physical properties of the two phases. Our high resolution data on the 2H phase shows kinks in the spectral function that are fingerprints of the electron-phonon coupling. However, the strength of the coupling is found to be much larger for the the sections of bands with Nb 4$d_{x^2-y^2,xy}$ character than for the Nb 4$d_{3z^2-r^2}$. Our results provide an experimental framework for interpreting the two-gap superconductivity and "latent" charge density wave in 2H-NbS$_2$.
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Submitted 30 March, 2021; v1 submitted 23 December, 2020;
originally announced December 2020.
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Photoemission study on pristine and Ni-doped SrTiO$_{3}$ thin films
Authors:
F. Alarab,
K. Hricovini,
B. Leikert,
L. Nicolai,
M. Fanciulli,
O. Heckmann,
M. Richter,
L. Prušakova,
Z. Jansa,
P. Šutta,
J. Rault,
P. Lefevre,
M. Muntwiller,
R. Claessen,
J. Minár
Abstract:
We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high…
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We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greens's function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings.
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Submitted 25 November, 2020;
originally announced November 2020.
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Revealing Hidden Orbital Pseudospin Texture with Time-Reversal Dichroism in Photoelectron Angular Distributions
Authors:
Samuel Beaulieu,
Jakub Schusser,
Shuo Dong,
Michael Schüler,
Tommaso Pincelli,
Maciej Dendzik,
Julian Maklar,
Alexander Neef,
Hubert Ebert,
Karol Hricovini,
Martin Wolf,
Jürgen Braun,
Laurenz Rettig,
Jan Minár,
Ralph Ernstorfer
Abstract:
We performed angle-resolved photoemission spectroscopy (ARPES) of bulk 2H-WSe$_2$ for different crystal orientations linked to each other by time-reversal symmetry. We introduce a new observable called time-reversal dichroism in photoelectron angular distributions (TRDAD), which quantifies the modulation of the photoemission intensity upon effective time-reversal operation. We demonstrate that the…
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We performed angle-resolved photoemission spectroscopy (ARPES) of bulk 2H-WSe$_2$ for different crystal orientations linked to each other by time-reversal symmetry. We introduce a new observable called time-reversal dichroism in photoelectron angular distributions (TRDAD), which quantifies the modulation of the photoemission intensity upon effective time-reversal operation. We demonstrate that the hidden orbital pseudospin texture leaves its imprint onto TRDAD, due to multiple orbitals interference effects in photoemission. Our experimental results are in quantitative agreement with both tight-binding model and state-of-the-art fully relativistic calculations performed using the one-step model of photoemission. While spin-resolved ARPES probes the spin component of entangled spin-orbital texture in multiorbital systems, we unambiguously demonstrate that TRDAD reveals its orbital pseudospin texture counterpart.
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Submitted 27 August, 2020; v1 submitted 2 June, 2020;
originally announced June 2020.
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Bulk and surface electronic states in the dosed semimetallic HfTe$\boldsymbol{_2}$
Authors:
Zakariae El Youbi,
Sung Won Jung,
Saumya Mukherjee,
Mauro Fanciulli,
Jakub Schusser,
Olivier Heckmann,
Christine Richter,
Ján Minár,
Karol Hricovini,
Matthew D. Watson,
Cephise Cacho
Abstract:
The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-…
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The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-resolved photoemission spectroscopy (ARPES), we have investigated the electronic structure of this material as a function of Potassium (K) deposition. From the k$_z$ maps, we observe the appearance of 2D dispersive bands after electron dosing, with an increasing sharpness of the bands, consistent with the wavefunction confinement at the topmost layer. In our highest-dosing cases, a monolayer-like electronic structure emerges, presumably as a result of intercalation of the alkali metal. Here, by bringing the topmost valence band below $E_F$, we can directly measure a band overlap of $\sim$ 0.2 eV. However, 3D bulk-like states still contribute to the spectra even after considerable dosing. Our work provides a reference point for the increasingly popular studies of the alkali metal dosing of semimetals using ARPES.
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Submitted 7 June, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Spin-, time- and angle-resolved photoemission spectroscopy on WTe$_2$
Authors:
Mauro Fanciulli,
Jakub Schusser,
Min-I Lee,
Zakariae El Youbi,
Olivier Heckmann,
Maria Christine Richter,
Cephise Cacho,
Carlo Spezzani,
David Bresteau,
Jean-François Hergott,
Pascal D'Oliveira,
Olivier Tcherbakoff,
Thierry Ruchon,
Jan Minár,
Karol Hricovini
Abstract:
We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk WTe$_2$, a possible Weyl type-II semimetal. Measurements at different femtosecond pump-probe delays and comparison with spin-resolved one-step photoe…
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We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk WTe$_2$, a possible Weyl type-II semimetal. Measurements at different femtosecond pump-probe delays and comparison with spin-resolved one-step photoemission calculations provide insight into the spin polarization of electrons above the Fermi level in the region where Weyl points of WTe$_2$ are expected. We observe a spin accumulation above the Weyl points region, that is consistent with a spin-selective bottleneck effect due to the presence of spin polarized cone-like electronic structure. Our results support the feasibility of STARPES with HHG, which despite being experimentally challenging provides a unique way to study spin dynamics in photoemission.
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Submitted 13 December, 2019;
originally announced December 2019.
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Bi monocrystal formation on InAs(111)A and B substrates
Authors:
L. Nicolaï,
J. -M. Mariot,
U. Djukic,
W. Wang,
O. Heckmann,
M. C. Richter,
J. Kanski,
M. Leandersson,
J. Sadowski,
T. Balasubramanian,
I. Vobornik,
J. Fujii,
J. Braun,
H. Ebert,
J. Minár,
K. Hricovini
Abstract:
The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi gro…
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The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a $\approx 10$~BL deposit on the A face is identical to that of bulk Bi, while more than $\approx 30$ BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations.
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Submitted 1 July, 2018;
originally announced July 2018.
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Study and characterization of SrTiO3 surface
Authors:
F. Alarab,
J. Minar,
P. Sutta,
L. Prusakova,
R. Medlın,
O. Heckmann,
C. Richter,
K. Hricovini
Abstract:
The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DEGes at oxide interfaces has been attributed to the well known "polar catastrophe" mechanism. On the other hand, recently a 2DEG was also found on a cl…
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The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DEGes at oxide interfaces has been attributed to the well known "polar catastrophe" mechanism. On the other hand, recently a 2DEG was also found on a clean SrTiO3(001) surface where it is formed due to oxygen vacancies. However, these 2DEG systems have been until now found mostly on atomically perfect crystalline samples usually grown by pulsed laser deposition or molecular beam epitaxy i.e. samples which are difficult to be prepared and require specific experimental conditions. Here, we report on the fabrication of SrTiO3 thin films deposited by magnetron sputtering which is suitable for mass-production of samples adapted for nanoelectronic applications. The characterization of their structural and electronic properties was done and compared to those of SrTiO3 single crystals. XRD patterns and SEM micrography show that the deposited films are amorphous and their structure changes to polycrystalline by heating them at 900 °C. Photoemission spectroscopy (XPS and UPS) was used to study the electronic properties of the films and the crystal. In both, we observe the 2DEG system at Fermi level and the formation of Ti3+ states after heating the surface at 900 °C.
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Submitted 30 June, 2018;
originally announced July 2018.
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High quality cobalt ferrite ultrathin films with large inversion parameter grown in epitaxy on Ag(001)
Authors:
M. De Santis,
A. Bailly,
I. Coates,
S. Grenier,
O. Heckmann,
K. Hricovini,
Y. Joly,
V. Langlais,
A. Y. Ramos,
M. C. Richter,
X. Torrelles. S. Garaudée,
O. Geaymond,
O. Ulrich
Abstract:
Cobalt ferrite ultrathin films with inverse spinel structure are among the best candidates for spin-filtering at room temperature. We have fabricated high-quality epitaxial ultrathin CoFe2O4 layers on Ag(001) following a three-step method: an ultrathin metallic CoFe2 alloy was first grown in coherent epitaxy on the substrate, and then treated twice with O2, first at RT and then during annealing. T…
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Cobalt ferrite ultrathin films with inverse spinel structure are among the best candidates for spin-filtering at room temperature. We have fabricated high-quality epitaxial ultrathin CoFe2O4 layers on Ag(001) following a three-step method: an ultrathin metallic CoFe2 alloy was first grown in coherent epitaxy on the substrate, and then treated twice with O2, first at RT and then during annealing. The epitaxial orientation, the surface, interface and film structure were resolved combining LEED, STM, Auger and in situ GIXRD. A slight tetragonal distortion was observed, that should drive the easy magnetization axis in plane due to the large magneto-elastic coupling of such a material. The so-called inversion parameter, i.e. the Co fraction occupying octahedral sites in the ferrite spinel structure, is a key element for its spin-dependent electronic gap. It was obtained through in-situ x-ray resonant diffraction measurements collected at both the Co and Fe K edges. The data analysis was performed using the FDMNES code and showed that Co ions are predominantly located at octahedral sites with an inversion parameter of 0.88 +- 0.05. Ex-situ XPS gave an estimation in accordance with the values obtained through diffraction analysis.
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Submitted 29 June, 2018;
originally announced July 2018.
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A topological material in the III-V family: heteroepitaxial InBi on InAs
Authors:
Laurent Nicolaï,
Ján Minár,
Maria Christine Richter,
Uros Djukic,
Olivier Heckmann,
Jean-Michel Mariot,
Johan Adell,
Mats Leandersson,
Janusz Sadowski,
Jürgen Braun,
Hubert Ebert,
Jonathan D. Denlinger,
Ivana Vobornik,
Jun Fujii,
Pavol Šutta,
Gavin R. Bell,
Martin Gmitra,
Karol Hricovini
Abstract:
InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradic…
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InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hop** terms, and no Bi-In interaction, gives a deeper insight into the spin texture.
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Submitted 20 March, 2024; v1 submitted 8 June, 2018;
originally announced June 2018.
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Resonant photoemission with circular polarized light on magnetized LSMO
Authors:
M. C. Richter,
O. Heckmann,
B. S. Mun,
C. S. Fadley,
B. Mercey,
K. Hricovini
Abstract:
We have used resonant photoemission with circular polarized light as a new tool to obtain information about the electronic structure of half-metals. After careful sample surface preparation of La0.7Sr0.3MnO3, we have obtained a dichroic signal for the L2,3 absorption of Mn. Working with a magnetized sample and circular polarized light we observe a clear effect of the helicity of light on the posit…
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We have used resonant photoemission with circular polarized light as a new tool to obtain information about the electronic structure of half-metals. After careful sample surface preparation of La0.7Sr0.3MnO3, we have obtained a dichroic signal for the L2,3 absorption of Mn. Working with a magnetized sample and circular polarized light we observe a clear effect of the helicity of light on the position of the resonant Raman-Auger photoelectrons from the Mn 2p3p3d decay. These results allow us to achieve a rough estimate of the half-metallic spin half-gap.
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Submitted 5 June, 2018;
originally announced June 2018.
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Strong Resonances of Quasi 1D Structures at the Bi/InAs(100) Surface
Authors:
Olivier Heckmann,
Maria Christine Richter,
Jean-Michel Mariot,
Laurent Nicolaï,
Ivana Vobornik,
Weimin Wang,
Uros Djukic,
Karol Hricovini
Abstract:
Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi and Bi alloys have as well attracted much attention. Here we present ARPES studies of Bi/InAs(100) int…
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Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi and Bi alloys have as well attracted much attention. Here we present ARPES studies of Bi/InAs(100) interface. Bismuth deposition followed by annealing of the surface results in the formation of one full Bi monolayer decorated by Bi-nanolines. We found that the building up of the interface does affect the electronic structure of the substrate. As a consequence of weak interaction, bismuth states are placed in the gaps of the electronic structure of InAs(100). We observe a strong resonance of the Bi electronic states close to the Fermi level; its intensity depends on the photon energy and the photon polarization. These states show nearly no dispersion when measured perpendicular to the nanolines, confirming their one-dimensionality.
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Submitted 23 June, 2018; v1 submitted 4 June, 2018;
originally announced June 2018.
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Distinctive Picosecond Spin Polarization Dynamics in Bulk Half-Metals
Authors:
M. Battiato,
J. Minar,
W. Wang,
W. Ndiaye,
M. C. Richter,
O. Heckmann,
J. -M. Mariot,
F. Parmigiani,
K. Hricovini,
C. Cacho
Abstract:
Femtosecond laser excitations in half-metal (HM) compounds are theoretically predicted to induce an exotic picosecond spin dynamics. In particular, conversely to what is observed in conventional metals and semiconductors, the thermalization process in HMs leads to a long living partially thermalized configuration characterized by three Fermi--Dirac distributions for the minority, majority conducti…
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Femtosecond laser excitations in half-metal (HM) compounds are theoretically predicted to induce an exotic picosecond spin dynamics. In particular, conversely to what is observed in conventional metals and semiconductors, the thermalization process in HMs leads to a long living partially thermalized configuration characterized by three Fermi--Dirac distributions for the minority, majority conduction and majority valence electrons respectively. Remarkably, these distributions have the same temperature but different chemical potentials. This unusual thermodynamics state causes a persistent non-equilibrium spin polarization only well above the Fermi energy. Femtosecond spin dynamics experiments performed on Fe$_3$O$_4$ by time-, spin-, and angle-resolved photoelectron spectroscopy confirm our model. Furthermore, the spin polarization response proves to be very robust and it can be adopted to selectively test the bulk HM character in a wide range of compounds.
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Submitted 28 February, 2018;
originally announced February 2018.
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Momentum resolved spin dynamics of bulk and surface excited states in the topological insulator $\mathrm{Bi_{2}Se_{3}}$
Authors:
C. Cacho,
A. Crepaldi,
M. Battiato,
J. Braun,
F. Cilento,
M. Zacchigna,
M. C. Richter,
O. Heckmann,
E. Springate,
Y. Liu,
S. S. Dhesi,
H. Berger,
Ph. Bugnon,
K. Held,
M. Grioni,
H. Ebert,
K. Hricovini,
J. Minár,
F. Parmigiani
Abstract:
The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only by measuring the spin intensity signal over several order of magnitude in spin, time and angle resolved photoemission spectroscopy (STAR-PES) experiments is it p…
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The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only by measuring the spin intensity signal over several order of magnitude in spin, time and angle resolved photoemission spectroscopy (STAR-PES) experiments is it possible to comprehensively describe the optically excited electronic states in TIs materials. The experiments performed on $\mathrm{Bi_{2}Se_{3}}$ reveal the existence of a Surface-Resonance-State in the 2nd bulk band gap interpreted on the basis of fully relativistic ab-initio spin resolved photoemission calculations. Remarkably, the spin dependent relaxation of the hot carriers is well reproduced by a spin dynamics model considering two non-interacting electronic systems, derived from the excited surface and bulk states, with different electronic temperatures.
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Submitted 17 September, 2014;
originally announced September 2014.
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Polarization-dependent ARPES study of La1-xSrxMnO3
Authors:
M. C. Falub,
M. Shi,
P. R. Willmott,
J. Krempasky,
S. G. Chiuzbaian,
K. Hricovini,
L. Patthey
Abstract:
We present angle-resolved photoemission spectroscopy results on thin films of the three-dimensional manganite perovskite La1-xSrxMnO3, with TC = 240 K. In the low-binding energy region, we found two energy bands, one dispersing along the (100) sample surface and the other along the normal to the surface. Through a detailed polarization-dependent analysis, we have determined the symmetries of the…
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We present angle-resolved photoemission spectroscopy results on thin films of the three-dimensional manganite perovskite La1-xSrxMnO3, with TC = 240 K. In the low-binding energy region, we found two energy bands, one dispersing along the (100) sample surface and the other along the normal to the surface. Through a detailed polarization-dependent analysis, we have determined the symmetries of the two bands. The initial states associated with the band that disperses along the surface are dominantly odd with respect to the (110) mirror plane and even with respect to the (010) mirror plane. Based upon this investigation, we have derived the expression of the spatial term for the wave functions describing these low-energy states.
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Submitted 23 March, 2005;
originally announced March 2005.
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The electronic structure of La$_{1-x}$Sr$_{x}$MnO$_{3}$ thin films and its $T_c$ dependence as studied by angle-resolved photoemission
Authors:
M. Shi,
M. C. Falub,
P. R. Willmott,
J. Krempasky,
R. Herger,
L. Patthey,
K. Hricovini,
C. Falub,
M. Schneider
Abstract:
We present angle-resolved photoemission spectroscopy results for thin films of the three-dimensional manganese perovskite La$_{1-x}$Sr$_{x}$MnO$_{3}$. We show that the transition temperature ($T_c$) from the paramagnetic insulating to ferromagnetic metallic state is closely related to details of the electronic structure, particularly to the spectral weight at the ${\bf k}$-point, where the sharp…
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We present angle-resolved photoemission spectroscopy results for thin films of the three-dimensional manganese perovskite La$_{1-x}$Sr$_{x}$MnO$_{3}$. We show that the transition temperature ($T_c$) from the paramagnetic insulating to ferromagnetic metallic state is closely related to details of the electronic structure, particularly to the spectral weight at the ${\bf k}$-point, where the sharpest step at the Fermi level was observed. We found that this ${\bf k}$-point is the same for all the samples, despite their different $T_c$. The change of $T_c$ is discussed in terms of kinetic energy optimization. Our ARPES results suggest that the change of the electronic structure for the samples having different transition temperatures is different from the rigid band shift.
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Submitted 25 March, 2008; v1 submitted 21 March, 2005;
originally announced March 2005.
