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Unclonable anti-counterfeiting labels based on microlens arrays and luminescent microparticles
Authors:
Vinay Kumar,
Stephan Dottermusch,
Ngei Katumo,
Bryce S. Richards,
Ian A. Howard
Abstract:
Micron-scale randomness during manufacturing can ensure anti-counterfeiting labels are unclonable. However, this security typically comes at the expense of complex hardware being needed for authentication (e.g., microscopy systems). We demonstrate unclonable labels that can be authenticated using a standard light-emitting diode and smartphone camera. The labels consist of a microlens array laminat…
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Micron-scale randomness during manufacturing can ensure anti-counterfeiting labels are unclonable. However, this security typically comes at the expense of complex hardware being needed for authentication (e.g., microscopy systems). We demonstrate unclonable labels that can be authenticated using a standard light-emitting diode and smartphone camera. The labels consist of a microlens array laminated to a polymer film that is doped with luminescent microparticles. The micron-scale random overlap of focal volumes and microparticles leads to a pattern of bright points of visible light emission that can be easily imaged by a smartphone camera. 10 000 comparisons of images demonstrate that the labels can be robustly authenticated, and that the probability of a false authentication is on the order of $10^{-15}$. The ability for microlens arrays to simplify the hardware needed for authentication of unclonable labels is generalizable, and attractive for the implementation of unclonable labels in anti-counterfeiting systems.
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Submitted 12 July, 2021;
originally announced July 2021.
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Phonon density of states in lanthanide-based nanocrystals
Authors:
Z. H. Li,
D. Hudry,
R. Heid,
A. H. Said,
M. D. Le,
R. Popescu,
D. Gerthsen,
M. Merz,
K. W. Krämer,
D. Busko,
I. A. Howard,
B. S. Richards,
F. Weber
Abstract:
We report a combined inelastic neutron and X-ray scattering study of the phonon density of states of the nano- and microcrystalline lanthanide-based materials NaY$_{0.8}$Yb$_{0.18}$Er$_{0.02}$F$_4$ and NaGd$_{0.8}$Yb$_{0.18}$Er$_{0.02}$F$_4$. While large (20 nm) nanocrystals display the same vibrational spectra as their microcrystalline counterparts, we find an enhanced phonon density of states at…
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We report a combined inelastic neutron and X-ray scattering study of the phonon density of states of the nano- and microcrystalline lanthanide-based materials NaY$_{0.8}$Yb$_{0.18}$Er$_{0.02}$F$_4$ and NaGd$_{0.8}$Yb$_{0.18}$Er$_{0.02}$F$_4$. While large (20 nm) nanocrystals display the same vibrational spectra as their microcrystalline counterparts, we find an enhanced phonon density of states at low energies, $E \leq 15\,\rm{meV}$, in ultra-small (5 nm) NaGd$_{0.8}$Yb$_{0.18}$Er$_{0.02}$F$_4$ nanocrystals which we assign to an increased relative spectral weight of surface phonon modes. Based on our observations for ultra-small nanocrystals, we rationalize that an increase of the phonon density of states in large nanocrystals due to surface phonons is too small to be observed in the current measurements. The experimental approach described in this report constitutes the first step toward the rationalization of size effects on the modification of the absolute upconversion quantum yield of upconverting nanocrystals.
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Submitted 2 December, 2020;
originally announced December 2020.
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Revealing the internal luminescence quantum efficiency of perovskite films via accurate quantification of photon recycling
Authors:
Paul Fassl,
Vincent Lami,
Felix J. Berger,
Lukas M. Falk,
Jana Zaumseil,
Bryce S. Richards,
Ian A. Howard,
Yana Vaynzof,
Ulrich W. Paetzold
Abstract:
The internal luminescence quantum efficiency ($Q_\mathrm{i}^\mathrm{lum}$) provides an excellent assessment of the optoelectronic quality of semiconductors. To determine $Q_\mathrm{i}^\mathrm{lum}$ of perovskite films from the experimentally accessible external luminescence quantum efficiency ($Q_\mathrm{e}^\mathrm{lum}$) it is essential to account for photon recycling, and this requires knowledge…
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The internal luminescence quantum efficiency ($Q_\mathrm{i}^\mathrm{lum}$) provides an excellent assessment of the optoelectronic quality of semiconductors. To determine $Q_\mathrm{i}^\mathrm{lum}$ of perovskite films from the experimentally accessible external luminescence quantum efficiency ($Q_\mathrm{e}^\mathrm{lum}$) it is essential to account for photon recycling, and this requires knowledge of the photon escape probability ($p_\mathrm{e}$). Here, we establish an analysis procedure based on a curve fitting model that accurately determines $p_\mathrm{e}$ of perovskite films from photoluminescence (PL) spectra measured with a confocal microscope and an integrating sphere setup. We show that scattering-induced outcoupling of initially-trapped PL explains commonly observed red-shifted and broadened PL spectral shapes and leads to $p_\mathrm{e}$ being more than 10% higher in absolute terms compared to earlier assumptions. Applying our model to CH$_3$NH$_3$PbI$_3$ films with exceptionally high $Q_\mathrm{e}^\mathrm{lum}$ up to 47.4% sets a real benchmark for $Q_\mathrm{i}^\mathrm{lum}$ at $78.0 \pm 0.5\%$, revealing there is beyond a factor of two more scope for reducing non-radiative recombination than previously thought.
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Submitted 24 October, 2020;
originally announced October 2020.
