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Roles of band gap and Kane electronic dispersion in the THz-frequency nonlinear optical response in HgCdTe
Authors:
Davide Soranzio,
Elsa Abreu,
Sarah Houver,
Janine Dössegger,
Matteo Savoini,
Frédéric Teppe,
Sergey Krishtopenko,
Nikolay N. Mikhailov,
Sergey A. Dvoretsky,
Steven L. Johnson
Abstract:
Materials with linear electronic dispersion often feature high carrier mobilities and unusually strong nonlinear optical interactions. In this work, we investigate the THz nonlinear dynamics of one such material, HgCdTe, with an electronic band dispersion heavily dependent on both temperature and stoichiometry. We show how the band gap, carrier concentration and band shape together determine the n…
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Materials with linear electronic dispersion often feature high carrier mobilities and unusually strong nonlinear optical interactions. In this work, we investigate the THz nonlinear dynamics of one such material, HgCdTe, with an electronic band dispersion heavily dependent on both temperature and stoichiometry. We show how the band gap, carrier concentration and band shape together determine the nonlinear response of the system. At low temperatures, carrier generation from Zener tunneling dominates the nonlinear response with a reduction in the overall transmission. At room temperature, quasi-ballistic electronic dynamics drive the largest observed nonlinear optical interactions, leading to a transmission increase. Our results demonstrate the sensitivity of these nonlinear optical properties of narrow-gap materials to small changes in the electronic dispersion and carrier concentration.
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Submitted 17 April, 2024; v1 submitted 16 April, 2024;
originally announced April 2024.
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Disentangling lattice and electronic instabilities in the excitonic insulator candidate Ta$_2$NiSe$_5$ by nonequilibrium spectroscopy
Authors:
Kota Katsumi,
Alexandr Alekhin,
Sofia-Michaela Souliou,
Michael Merz,
Amir-Abbas Haghighirad,
Matthieu Le Tacon,
Sarah Houver,
Maximilien Cazayous,
Alain Sacuto,
Yann Gallais
Abstract:
Ta$_2$NiSe$_5$ is an excitonic insulator candidate showing the semiconductor/semimetal-to-insulator (SI) transition below $T_{\text{c}}$ = 326 K. However, since a structural transition accompanies the SI transition, deciphering the role of electronic and lattice degrees of freedom in driving the SI transition has remained controversial. Here, we investigate the photoexcited nonequilibrium state in…
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Ta$_2$NiSe$_5$ is an excitonic insulator candidate showing the semiconductor/semimetal-to-insulator (SI) transition below $T_{\text{c}}$ = 326 K. However, since a structural transition accompanies the SI transition, deciphering the role of electronic and lattice degrees of freedom in driving the SI transition has remained controversial. Here, we investigate the photoexcited nonequilibrium state in Ta$_2$NiSe$_5$ using pump-probe Raman and photoluminescence (PL) spectroscopies. The combined nonequilibrium spectroscopic measurements of the lattice and electronic states reveal the presence of a photoexcited metastable state where the insulating gap is suppressed, but the low-temperature structural distortion is preserved. We conclude that electron correlations play a vital role in the SI transition of Ta$_2$NiSe$_5$.
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Submitted 15 November, 2022;
originally announced November 2022.
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400 kHz repetition rate THz-TDS with 24 mW of average power driven by a compact industrial Yb-laser
Authors:
Celia Millon,
Sarah Houver,
Clara J. Saraceno
Abstract:
We demonstrate a high average power terahertz time-domain (THZ-TDS) spectrometer based on optical rectification in the tilted-pulse front geometry in lithium niobate at room temperature, driven by a commercial, industrial femtosecond-laser operating with flexible repetition rate between 40 kHz - 400 kHz. The driving laser provides a pulse energy of 41 uJ for all repetition rates, at a pulse durati…
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We demonstrate a high average power terahertz time-domain (THZ-TDS) spectrometer based on optical rectification in the tilted-pulse front geometry in lithium niobate at room temperature, driven by a commercial, industrial femtosecond-laser operating with flexible repetition rate between 40 kHz - 400 kHz. The driving laser provides a pulse energy of 41 uJ for all repetition rates, at a pulse duration of 310 fs, allowing us to explore repetition rate dependent effects in our TDS. At the maximum repetition rate of 400 kHz, up to 16.5 W of average power are available to drive our THz source, resulting in a maximum of 24 mW of THz average power with a conversion efficiency of ~ 0.15 % and electric field strength of several tens of kV/cm. At the other available lower repetition rates, we show that the pulse strength and bandwidth of our TDS is unchanged, showing that the THz generation is not affected by thermal effects in this average power region of several tens of watts. The resulting combination of high electric field strength with flexible and high repetition rate is very attractive for spectroscopy, in particular since the system is driven by an industrial, compact laser without the need for external compressors or other specialized pulse manipulation.
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Submitted 31 October, 2023; v1 submitted 20 September, 2022;
originally announced September 2022.
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Impact ionization in low-band-gap semiconductors driven by ultrafast THz excitation: beyond the ballistic regime
Authors:
Simone Biasco,
Florence Burri,
Sarah Houver,
Elsa Abreu,
Matteo Savoini,
Steven L. Johnson
Abstract:
Using two-dimensional THz spectroscopy in combination with numerical models, we investigate the dynamics linked to carrier multiplication caused by high-field THz excitation of the low-gap semiconductor InSb. In addition to previously observed dynamics connected with quasi-ballistic carrier dynamics, we observe other spectral and temporal features that we attribute to impact ionization for peak fi…
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Using two-dimensional THz spectroscopy in combination with numerical models, we investigate the dynamics linked to carrier multiplication caused by high-field THz excitation of the low-gap semiconductor InSb. In addition to previously observed dynamics connected with quasi-ballistic carrier dynamics, we observe other spectral and temporal features that we attribute to impact ionization for peak fields above 60 kV/cm, which continue up to the maximum investigated peak field of 430 kV/cm. At the highest fields we estimate a carrier multiplication factor greater than 10 due to impact ionization, which is well-reproduced by a numerical simulation of the impact ionization process which we have developed.
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Submitted 15 August, 2022;
originally announced August 2022.
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Spin singlet and quasiparticles excitations in cuprate superconductors
Authors:
M. Mezidi,
A. Alekhin,
G. D. Gu,
D. Colson,
S. Houver,
M. Cazayous,
Y. Gallais,
A. Sacuto
Abstract:
We followed step by step the transition from an antiferromagnetic (AF) Mott insulator to a superconducting (SC) metal in the Bi$_2$Sr$_2$CaCu$_{2}$O$_{8+δ}$ (Bi-2212) cuprate using the electronic Raman scattering spectroscopy. This was achieved by tracking the do** dependence of the spin singlet excitation originate from the AF Mott insulator, the normal state quasiparticles excitation related t…
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We followed step by step the transition from an antiferromagnetic (AF) Mott insulator to a superconducting (SC) metal in the Bi$_2$Sr$_2$CaCu$_{2}$O$_{8+δ}$ (Bi-2212) cuprate using the electronic Raman scattering spectroscopy. This was achieved by tracking the do** dependence of the spin singlet excitation originate from the AF Mott insulator, the normal state quasiparticles excitation related to the mobile charge carriers and the Bogoliubov quasiparticles related to the SC gap. We show that the signature of the pseudogap phase which develops during this transition, can be interpreted as the blocking of charge carriers by the enhancement of the antiferromagnetic correlations as the temperature drops. We find that the energy scale of the pseudogap, $Δ_{\textrm{pg}}(p)$, closely follows the one of the spin singlet excitation, $Δ_{\textrm{sse}}(p)$, with do** $p$. The quasiparticles lifetime considerably increases with do** when the pseudogap collapses. We reveal that the maximum amplitude of the SC gap, $Δ_{\textrm{sc}}^{\textrm{max}}$ and the SC transition temperature \Tc are linked in an extended range of do** such as $Δ_{\textrm{sc}}^{\textrm{max}}(p) \propto Δ_{\textrm{sse}}(p)\, T_c(p)$. This relation suggests that the AF correlations play a key role in the mechanism of superconductivity.
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Submitted 23 November, 2022; v1 submitted 20 July, 2022;
originally announced July 2022.
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Nematic fluctuations mediated superconductivity revealed by anisotropic strain in Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$
Authors:
J. -C. Philippe,
A. Lespinas,
J. Faria,
A. Forget,
D. Colson,
S. Houver,
M. Cazayous,
A. Sacuto,
I. Paul,
Y. Gallais
Abstract:
Anisotropic strain is an external field capable of selectively addressing the role of nematic fluctuations in promoting superconductivity. We demonstrate this using polarization-resolved elasto-Raman scattering to probe the evolution of nematic fluctuations under strain in the normal and superconducting states of the paradigmatic iron-based superconductor Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$. In the non…
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Anisotropic strain is an external field capable of selectively addressing the role of nematic fluctuations in promoting superconductivity. We demonstrate this using polarization-resolved elasto-Raman scattering to probe the evolution of nematic fluctuations under strain in the normal and superconducting states of the paradigmatic iron-based superconductor Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$. In the non-superconducting parent compound BaFe$_2$As$_2$ we observe a strain-induced suppression of the nematic susceptibility which follows the expected behavior of an Ising order parameter under a symmetry breaking field. For the superconducting compound, the suppression of the nematic susceptibility correlates with the decrease of the superconducting critical temperature $T_c$. Our results indicate a significant contribution of nematic fluctuations to electron pairing and validate theoretical scenarios of enhanced $T_c$ near a nematic quantum critical point.
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Submitted 28 October, 2022; v1 submitted 26 April, 2022;
originally announced April 2022.
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Solid-State Biased Coherent Detection of Ultra-Broadband Terahertz Pulses for high repetition rate, low pulse energy lasers
Authors:
Tim Suter,
Alessandro Tomasino,
Matteo Savoini,
Sarah Houver,
Steven L. Johnson,
Elsa Abreu
Abstract:
We report the coherent generation and detection of terahertz (THz) pulses covering the bandwidth of 0.1-9 THz in a high repetition rate, low pulse energy laser system. In this work we demonstrate the application and evaluation of solid-state biased coherent detection in combination with a spintronic emitter. This combination was used to generate and detect THz pulses in a time-domain spectroscopy…
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We report the coherent generation and detection of terahertz (THz) pulses covering the bandwidth of 0.1-9 THz in a high repetition rate, low pulse energy laser system. In this work we demonstrate the application and evaluation of solid-state biased coherent detection in combination with a spintronic emitter. This combination was used to generate and detect THz pulses in a time-domain spectroscopy (TDS) setup and tested on bulk nonlinear crystals. These results establish a new promising candidate to extend the possibilities for compact, broadband THz TDS systems driven by high repetition rate lasers.
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Submitted 29 January, 2022;
originally announced January 2022.
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Elasto-Raman scattering: arsenic optical phonon as a probe of nematicity in BaFe$_2$As$_2$
Authors:
J. -C. Philippe,
J. Faria,
A. Forget,
D. Colson,
S. Houver,
M. Cazayous,
A. Sacuto,
Y. Gallais
Abstract:
We report a Raman scattering study of nematic degrees of freedom in the iron-based superconductor parent compound BaFe$_2$As$_2$ under tunable uniaxial strain. We demonstrate that the polarization resolved arsenic (As) phonon intensity can be used to monitor the nematic order parameter as a function of both temperature and strain. At low temperature in the nematic ordered phase we use it to track…
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We report a Raman scattering study of nematic degrees of freedom in the iron-based superconductor parent compound BaFe$_2$As$_2$ under tunable uniaxial strain. We demonstrate that the polarization resolved arsenic (As) phonon intensity can be used to monitor the nematic order parameter as a function of both temperature and strain. At low temperature in the nematic ordered phase we use it to track the continuous and reversible orientation of nematic domains under variable strain. At higher temperature, the evolution of the As phonon intensity under strain reflects an enhanced nematic susceptibility close to the nematic transition $T_S$. Its temperature dependence under strong strain follows qualitatively the expected behavior of an Ising order parameter under a symmetry breaking field. Our elasto-Raman study illustrates the interest of combining selective anisotropic strain with a symmetry resolved probe like Raman scattering. Elasto-Raman scattering can be applied to a wide variety of quantum materials where uniaxial strain tunes electronic orders.
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Submitted 12 October, 2021;
originally announced October 2021.
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Giant optical nonlinearity cancellation in quantum wells
Authors:
S. Houver,
A. Lebreton,
T. A. S. Pereira,
G. Xu,
R. Colombelli,
I. Kundu,
L. H. Li,
E. H. Linfield,
A. G. Davies,
J. Mangeney,
J. Tignon,
R. Ferreira,
S. S. Dhillon
Abstract:
Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their explo…
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Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their exploitation in frequency conversion. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant cancellation effects in systems with many confined quantum states. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband resonant nonlinearities, we show that these giant cancellations are a result of interfering second-order nonlinear contributions of light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of materials, this work can be employed as a new, extremely sensitive tool to elucidate the bandstructure properties of complex quantum well systems.
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Submitted 4 January, 2019;
originally announced January 2019.
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2D THz spectroscopic investigation of ballistic conduction-band electron dynamics in InSb
Authors:
S. Houver,
L. Huber,
M. Savoini,
E. Abreu,
S. L. Johnson
Abstract:
Using reflective cross-polarized 2D THz time-domain spectroscopy in the range of 1-12 THz, we follow the trajectory of the out-of-equilibrium electron population in the low-bandgap semiconductor InSb. The 2D THz spectra show a set of distinct features at combinations of the plasma-edge and vibration frequencies. Using finite difference time domain simulations combined with a tight binding model of…
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Using reflective cross-polarized 2D THz time-domain spectroscopy in the range of 1-12 THz, we follow the trajectory of the out-of-equilibrium electron population in the low-bandgap semiconductor InSb. The 2D THz spectra show a set of distinct features at combinations of the plasma-edge and vibration frequencies. Using finite difference time domain simulations combined with a tight binding model of the band structure, we assign these features to electronic nonlinearities and show that the nonlinear response in the first picoseconds is dominated by coherent ballistic motion of the electrons. We demonstrate that this technique can be used to investigate the landscape of the band curvature near the Gamma-point as illustrated by the observation of anisotropy in the (100)-plane.
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Submitted 3 January, 2019;
originally announced January 2019.
