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Single-shot readout of multiple donor electron spins with a gate-based sensor
Authors:
Mark R. Hogg,
Prasanna Pakkiam,
Samuel K. Gorman,
Andrey V. Timofeev,
Yousun Chung,
Gurpreet K. Gulati,
Matthew G. House,
Michelle Y. Simmons
Abstract:
Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the s…
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Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the sensors, and extending the range of each sensor to read more qubits. Here we show high-fidelity single-shot electron spin readout using a nanoscale single-lead quantum dot (SLQD) sensor that is both compact and capable of reading multiple qubits. Our gate-based SLQD sensor is deployed in an all-epitaxial silicon donor spin qubit device, and we demonstrate single-shot readout of three $^{31}$P donor quantum dot electron spins with a maximum fidelity of 95%. Importantly in our device the quantum dot confinement potentials are provided inherently by the donors, removing the need for additional metallic confinement gates and resulting in strong capacitive interactions between sensor and donor quantum dots. We observe a $1/d^{1.4}$ scaling of the capacitive coupling between sensor and $^{31}$P dots (where $d$ is the sensor-dot distance), compared to $1/d^{2.5-3.0}$ in gate-defined quantum dot devices. Due to the small qubit size and strong capacitive interactions in all-epitaxial donor devices, we estimate a single sensor can achieve single-shot readout of approximately 15 qubits in a linear array, compared to 3-4 qubits for a similar sensor in a gate-defined quantum dot device. Our results highlight the potential for spin qubit devices with significantly reduced sensor densities.
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Submitted 17 March, 2022;
originally announced March 2022.
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Engineering long spin coherence times of spin-orbit systems
Authors:
T. Kobayashi,
J. Salfi,
J. van der Heijden,
C. Chua,
M. G. House,
D. Culcer,
W. D. Hutchison,
B. C. Johnson,
J. C. McCallum,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl,
M. Y. Simmons,
S. Rogge
Abstract:
Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s…
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Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s) coherence times $T_2$, while qubits with long $T_2$ have weak spin-orbit coupling making qubit coupling short-ranged and challenging for scale-up. Here we show that an intrinsic spin-orbit coupled "generalised spin" with total angular momentum $J=\tfrac{3}{2}$, which is defined by holes bound to boron dopant atoms in strained $^{28}\mathrm{Si}$, has $T_2$ rivalling the electron spins of donors and quantum dots in $^{28}\mathrm{Si}$. Using pulsed electron paramagnetic resonance, we obtain $0.9~\mathrm{ms}$ Hahn-echo and $9~\mathrm{ms}$ dynamical decoupling $T_2$ times, where strain plays a key role to reduce spin-lattice relaxation and the longitudinal electric coupling responsible for decoherence induced by electric field noise. Our analysis shows that transverse electric dipole can be exploited for electric manipulation and qubit coupling while maintaining a weak longitudinal coupling, a feature of $J=\tfrac{3}{2}$ atomic systems with a strain engineered quadrupole degree of freedom. These results establish single-atom hole spins in silicon with quantised total angular momentum, not spin, as a highly coherent platform with tuneable intrinsic spin-orbit coupling advantageous to build artificial quantum systems and couple qubits over long distances.
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Submitted 1 October, 2018; v1 submitted 28 September, 2018;
originally announced September 2018.
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Single-shot single-gate RF spin readout in silicon
Authors:
P. Pakkiam,
A. V. Timofeev,
M. G. House,
M. R. Hogg,
T. Kobayashi,
M. Koch,
S. Rogge,
M. Y. Simmons
Abstract:
For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is,…
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For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is, a single measurement (DiVincenzo 2000). Here we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of $82.9\%$ at a $3.3~\text{kHz}$ measurement bandwidth. We use this technique to measure a triplet $T_-$ to singlet $S_0$ relaxation time of $0.62~\text{ms}$ in precision donor quantum dots in silicon. We also show that the use of RF readout does not impact the maximum readout time at zero detuning limited by the $S_0$ to $T_-$ decay, which remained at approximately $2~\text{ms}$. This establishes single-gate sensing as a viable readout method for spin qubits.
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Submitted 5 September, 2018;
originally announced September 2018.
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Two-Electron Spin Correlations in Precision Placed Donors in Silicon
Authors:
M. A. Broome,
S. K. Gorman,
M. G. House,
S. J. Hile,
J. G. Keizer,
D. Keith,
C. D. Hill,
T. F. Watson,
W. J. Baker,
L. C. L. Hollenberg,
M. Y. Simmons
Abstract:
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means…
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Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16${\pm}1$ nm. By utilizing an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P-1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P-1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations.
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Submitted 26 July, 2018;
originally announced July 2018.
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Addressable electron spin resonance using donors and donor molecules in silicon
Authors:
Samuel J. Hile,
Lukas Fricke,
Matthew G. House,
Eldad Peretz,
Chin Yi Chen,
Yu Wang,
Matthew Broome,
Samuel K. Gorman,
Joris G. Keizer,
Rajib Rahman,
Michelle Y. Simmons
Abstract:
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with separations ~15nm is challenging. Here we show that by using atomic-precision lithography we can place a single P donor next to a 2P molecule 16(+/-1)nm apart…
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Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with separations ~15nm is challenging. Here we show that by using atomic-precision lithography we can place a single P donor next to a 2P molecule 16(+/-1)nm apart and use their distinctive hyperfine coupling strengths to address qubits at vastly different resonance frequencies. In particular the single donor yields two hyperfine peaks separated by 97(+/-2.5)MHz, in contrast to the donor molecule which exhibits three peaks separated by 262(+/-10)MHz. Atomistic tight-binding simulations confirm the large hyperfine interaction strength in the 2P molecule with an inter-donor separation of ~0.7nm, consistent with lithographic STM images of the 2P site during device fabrication. We discuss the viability of using donor molecules for built-in addressability of electron spin qubits in silicon.
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Submitted 26 July, 2018;
originally announced July 2018.
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Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot
Authors:
S. K. Gorman,
M. A. Broome,
M. G. House,
S. J. Hile,
J. G. Keizer,
D. Keith,
T. F. Watson,
W. J. Baker,
M. Y. Simmons
Abstract:
We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s…
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We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s and $22.1{\pm}1.0$ s respectively at $B_z{=}2.5$ T.
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Submitted 26 July, 2018;
originally announced July 2018.
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High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon
Authors:
M. A. Broome,
T. F. Watson,
D. Keith,
S. K. Gorman,
M. G. House,
J. G. Keizer,
S. J. Hile,
W. Baker,
M. Y. Simmons
Abstract:
In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to…
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In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to be of the order 3s at 2.5T and observe its predicted decrease as a function of magnetic field, reaching 0.5s at 1T.
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Submitted 26 July, 2018;
originally announced July 2018.
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Tunneling statistics for analysis of spin-readout fidelity
Authors:
Samuel K. Gorman,
Yu He,
Matthew G. House,
Joris G. Keizer,
Daniel Keith,
Lukas Fricke,
Samuel J. Hile,
Matthew A. Broome,
Michelle Y. Simmons
Abstract:
We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field w…
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We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity.
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Submitted 5 October, 2017;
originally announced October 2017.
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Spin-orbit dynamics of single acceptor atoms in silicon
Authors:
J. van der Heijden,
T. Kobayashi,
M. G. House,
J. Salfi,
S. Barraud,
R. Lavieville,
M. Y. Simmons,
S. Rogge
Abstract:
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information technologies. In silicon, a strong spin-orbit coupling exists within the spin-3/2 system of acceptor atoms and their energy levels and properties are expected to be hi…
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Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information technologies. In silicon, a strong spin-orbit coupling exists within the spin-3/2 system of acceptor atoms and their energy levels and properties are expected to be highly tunable. Here we show the influence of local symmetry tuning on the acceptor spin-dynamics, measured in the single-atom regime. Spin-selective tunneling between two coupled boron atoms in a commercial CMOS transistor is utilised for spin-readout, which allows for the probing of the two-hole spin relaxation mechanisms. A relaxation-hotspot is measured and explained by the mixing of acceptor heavy and light hole states. Furthermore, excited state spectroscopy indicates a magnetic field controlled rotation of the quantization axes of the atoms. These observations demonstrate the tunability of the spin-orbit states and dynamics of this spin-3/2 system.
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Submitted 9 March, 2017;
originally announced March 2017.
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Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies
Authors:
Giuseppe Carlo Tettamanzi,
Samuel James Hile,
Matthew Gregory House,
Martin Fuechsle,
Sven Rogge,
Michelle Y. Simmons
Abstract:
The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to $\approx$ 13 GHz to heavily phosphorous doped…
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The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to $\approx$ 13 GHz to heavily phosphorous doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one dimensional leads. Our pulse spectroscopy experiments confirm the presence of an excited state at an energy $\approx$ 9 meV consistent with the first excited state of a single $P$ donor in silicon. The relaxation rate of this first excited state to ground is estimated to be larger than 2.5 GHz, consistent with theoretical predictions. These results represent a systematic investigation of how an atomically precise single atom transistor device behaves under rf excitations.
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Submitted 27 February, 2017;
originally announced February 2017.
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Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
Authors:
T. Kobayashi,
J. van der Heijden,
M. G. House,
S. J. Hile,
Pablo Asshoff,
M. F. Gonzalez-Zalba,
M. Vinet,
M. Y. Simmons,
S. Rogge
Abstract:
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley spl…
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We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160-240 ueV with an electric field dependence 1.2 +- 0.2 meV/(MV/m). A large valley splitting is an essential requirement to implement a physical electron spin qubit in a silicon quantum dot.
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Submitted 13 April, 2016;
originally announced April 2016.
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Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
Authors:
Samuel J. Hile,
Matthew G. House,
Eldad Peretz,
Jan Verduijn,
Daniel Widmann,
Takashi Kobayashi,
Sven Rogge,
Michelle Y. Simmons
Abstract:
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected RF excitation from the reservoir, we can discriminate bet…
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We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected RF excitation from the reservoir, we can discriminate between charge transfer within the SET channel and tunneling between the donor and reservoir. The RF measurement allows observation of donor electron transitions at every charge degeneracy point in contrast to the SET conductance signal where charge transitions are only observed at triple points. The tunnel coupled reservoir has the advantage of a large effective lever arm (~35%) allowing us to independently extract a neutral donor charging energy ~62 +/- 17meV. These results demonstrate that we can replace three terminal transistors by a single terminal dispersive reservoir, promising for high bandwidth scalable donor control and readout.
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Submitted 10 September, 2015;
originally announced September 2015.
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Single-charge detection by an atomic precision tunnel junction
Authors:
M. G. House,
E. Peretz,
J. G. Keizer,
S. J. Hile,
M. Y. Simmons
Abstract:
We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5nm wide and 17.2nm long defined by an atomically precise phosphorus do** profile in silicon. The conductance of the junction responds to a nearby gate potential and also to changes in the charge state of a quantum dot patterned 52nm away. The response of this detector is monotonic across the entire working vol…
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We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5nm wide and 17.2nm long defined by an atomically precise phosphorus do** profile in silicon. The conductance of the junction responds to a nearby gate potential and also to changes in the charge state of a quantum dot patterned 52nm away. The response of this detector is monotonic across the entire working voltage range of the device, which will make it particularly useful for studying systems of multiple quantum dots. The charge sensitivity is maximized when the junction is most conductive, suggesting that more sensitive detection can be achieved by shortening the length of the junction to increase its conductance.
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Submitted 20 March, 2014;
originally announced March 2014.
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Detection and measurement of spin-dependent dynamics in random telegraph signals
Authors:
M. G. House,
Ming Xiao,
Guo** Guo,
HaiOu Li,
Gang Cao,
M. M. Rosenthal,
HongWen Jiang
Abstract:
A quantum point contact was used to observe single-electron fluctuations of a quantum dot in a GaAs heterostructure. The resulting random telegraph signals (RTS) contain statistical information about the electron spin state if the tunneling dynamics are spin-dependent. We develop a statistical method to extract information about spin-dependent dynamics from RTS and use it to demonstrate that these…
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A quantum point contact was used to observe single-electron fluctuations of a quantum dot in a GaAs heterostructure. The resulting random telegraph signals (RTS) contain statistical information about the electron spin state if the tunneling dynamics are spin-dependent. We develop a statistical method to extract information about spin-dependent dynamics from RTS and use it to demonstrate that these dynamics can be studied in the thermal energy regime. The tunneling rates of each spin state are independently measured in a finite external magnetic field. We confirm previous findings of a decrease in overall tunneling rates for the spin excited state compared to the ground state as an external magnetic field is increased.
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Submitted 6 September, 2013; v1 submitted 2 September, 2013;
originally announced September 2013.
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Measurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot
Authors:
M. Xiao,
M. G. House,
H. W. Jiang
Abstract:
We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The spin relaxation times are subsequently measured in the time-domain by a pump-and-probe method. For the QD that contains an unpaired spin, likely only a single el…
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We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The spin relaxation times are subsequently measured in the time-domain by a pump-and-probe method. For the QD that contains an unpaired spin, likely only a single electron, we find that T1 depends strongly on the applied magnetic field. Possible mechanisms leading to the observed spin relaxation are discussed.
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Submitted 15 September, 2009;
originally announced September 2009.
