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Rearrangement of single atoms in a 2000-site optical tweezers array at cryogenic temperatures
Authors:
Grégoire Pichard,
Desiree Lim,
Etienne Bloch,
Julien Vaneecloo,
Lilian Bourachot,
Gert-Jan Both,
Guillaume Mériaux,
Sylvain Dutartre,
Richard Hostein,
Julien Paris,
Bruno Ximenez,
Adrien Signoles,
Antoine Browaeys,
Thierry Lahaye,
Davide Dreon
Abstract:
We report on the trap** of single rubidium atoms in large arrays of optical tweezers comprising up to 2088 sites in a cryogenic environment at 6 K. Our approach relies on the use of microscope objectives that are in-vacuum but at room temperature, in combination with windowless thermal shields into which the objectives are protruding to ensure a cryogenic environment for the trapped atoms. To ac…
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We report on the trap** of single rubidium atoms in large arrays of optical tweezers comprising up to 2088 sites in a cryogenic environment at 6 K. Our approach relies on the use of microscope objectives that are in-vacuum but at room temperature, in combination with windowless thermal shields into which the objectives are protruding to ensure a cryogenic environment for the trapped atoms. To achieve enough optical power for efficient trap**, we combine two lasers at slightly different wavelengths. We discuss the performance and limitations of our design. Finally, we demonstrate atom-by-atom rearrangement of an 828-atom target array using moving optical tweezers controlled by a field-programmable gate array.
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Submitted 29 May, 2024;
originally announced May 2024.
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Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot
Authors:
Antoine Reigue,
Aristide Lemaître,
Carmen Gomez Carbonell,
Christian Ulysse,
Kamel Merghem,
Stéphane Guilet,
Richard Hostein,
Valia Voliotis
Abstract:
We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the chargi…
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We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the applied voltage shows a strong increase of the coherence time though not reaching the radiative limit. These charge controlled quantum dots act as quasi-perfect deterministic single-photon emitters, with one laser pulse converted into one emitted single photon.
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Submitted 26 October, 2017;
originally announced October 2017.
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Probing electron-phonon interaction through two-photon interference in resonantly driven semiconductor quantum dots
Authors:
Antoine Reigue,
Jake Iles-Smith,
Fabian Lux,
Léonard Monniello,
Mathieu Bernard,
Florent Margaillan,
Aristide Lemaitre,
Anthony Martinez,
Dara P S McCutcheon,
Jesper Mørk,
Richard Hostein,
Valia Voliotis
Abstract:
We investigate the temperature dependence of photon coherence properties through two photon interference (TPI) measurements from a single QD under resonant excitation. We show that the loss of indistinguishability is only related to the electron-phonon coupling without being affected by spectral diffusion. Through these measurements, and a complementary microscopic theory, we identify two independ…
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We investigate the temperature dependence of photon coherence properties through two photon interference (TPI) measurements from a single QD under resonant excitation. We show that the loss of indistinguishability is only related to the electron-phonon coupling without being affected by spectral diffusion. Through these measurements, and a complementary microscopic theory, we identify two independent separate decoherence processes each associated to phonons. Below 10K, we find that the relaxation of the vibrational lattice is the dominant contribution to the loss of TPI visibility. This process is non-Markovian in nature, and corresponds to real phonon transitions resulting in a broad phonon sideband in the QD emission spectra. Above 10K, virtual phonon transitions to higher lying excited states in the QD become the dominant dephasing mechanism, this leads to broadening of the zero phonon line, and a corresponding rapid decay in the visibility. The microscopic theory we develop provides analytic expressions for the dephasing rates for both virtual phonon scattering and non-Markovian lattice relaxation.
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Submitted 31 May, 2017; v1 submitted 21 December, 2016;
originally announced December 2016.
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Implementing structural slow light on short length scales: the photonic speed-bump
Authors:
Remi Faggiani,
Jianji Yang,
Richard Hostein,
Philippe Lalanne
Abstract:
One-dimensional (1D) infinite periodic systems exhibit vanishing group velocity and diverging density of states (DOS) near band edges. However, in practice, systems have finite sizes and inevitably this prompts the question of whether helpful physical quantities related to infinite systems, such as the group velocity that is deduced from the band structure, remain relevant in finite systems. For i…
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One-dimensional (1D) infinite periodic systems exhibit vanishing group velocity and diverging density of states (DOS) near band edges. However, in practice, systems have finite sizes and inevitably this prompts the question of whether helpful physical quantities related to infinite systems, such as the group velocity that is deduced from the band structure, remain relevant in finite systems. For instance, one may wonder how the DOS divergence can be approached with finite systems. Intuitively, one may expect that the implementation of larger and larger DOS, or equivalently smaller and smaller group velocities, would critically increase the system length. Based on general 1D-wave-physics arguments, we demonstrate that the large slow-light DOS enhancement of periodic systems can be observed with very short systems, whose lengths scale with the logarithm of the inverse of the group velocities. The understanding obtained for 1D systems leads us to propose a novel sort of microstructure to enhance light-matter interaction, a sort of photonic speed bump that abruptly changes the speed of light by a few orders of magnitude without any reflection. We show that the DOS enhancements of speed bumps result from a classical electromagnetic resonance characterized by a single resonance mode and also that the nature and the properties of the resonance are markedly different from those of classical defect-mode photonic-crystal cavities.
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Submitted 22 March, 2017; v1 submitted 27 September, 2016;
originally announced September 2016.
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Non post-selected indistinguishable single photons generated by a quantum dot under resonant excitation
Authors:
Léonard Monniello,
Antoine Reigue,
Richard Hostein,
Aristide Lemaitre,
Anthony Martinez,
Roger Grousson,
Valia Voliotis
Abstract:
We report on two-photon interferences from highly indistinguishable single photons emitted by a quantum dot. Stricly resonant excitation with picosecond laser pulses allows coherent state preparation with a signifi- cantly increased coherence time (T2 \sim 1 ns) and reduced lifetime (T1 \sim 650 ps), as compared to a non-resonant excitation scheme. Building-up the Hong-Ou-Mandel dip without post-s…
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We report on two-photon interferences from highly indistinguishable single photons emitted by a quantum dot. Stricly resonant excitation with picosecond laser pulses allows coherent state preparation with a signifi- cantly increased coherence time (T2 \sim 1 ns) and reduced lifetime (T1 \sim 650 ps), as compared to a non-resonant excitation scheme. Building-up the Hong-Ou-Mandel dip without post-selection of the interfering photons, visi- bilities greater than 70 % have been observed. Near-unity indistinguishable photons could be achieved for every dot if charge noise is controlled. Indeed, the remaining decoherence mechanism is likely due to the fluctuating electrostatic environment of the dots.
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Submitted 31 March, 2014;
originally announced March 2014.
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Excitation-induced dephasing in a resonantly driven InAs/GaAs quantum dot
Authors:
Léonard Monniello,
Catherine Tonin,
Richard Hostein,
Aristide Lemaitre,
Anthony Martinez,
Valia Voliotis,
Roger Grousson
Abstract:
We report on coherent emission of the neutral exciton state in a single semiconductor self-assembled InAs/GaAs quantum dot embedded in a one-dimensional waveguide, under resonant picosecond pulsed excita- tion. Direct measurements of the radiative lifetime and coherence time are performed as a function of excitation power and temperature. The characteristic dam** of Rabi oscillations which is ob…
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We report on coherent emission of the neutral exciton state in a single semiconductor self-assembled InAs/GaAs quantum dot embedded in a one-dimensional waveguide, under resonant picosecond pulsed excita- tion. Direct measurements of the radiative lifetime and coherence time are performed as a function of excitation power and temperature. The characteristic dam** of Rabi oscillations which is observed, is attributed to an excitation-induced dephasing due to a resonant coupling between the emitter and the acoustic phonon bath of the matrix. Other sources responsible for the decrease of the coherence time have been evidenced, in particular an enhancement of the radiative recombination rate due to the resonant strong coupling between the dot and the one-dimensional optical mode. As a consequence, the emission couples very efficiently into the waveguide mode leading to an additional relaxation term of the excited state population.
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Submitted 17 April, 2013;
originally announced April 2013.
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Polarization properties of excitonic qu-bits in single self-assembled quantum dots
Authors:
C. Tonin,
R. Hostein,
V. Voliotis,
R. Grousson,
A. Lemaitre,
A. Martinez
Abstract:
We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane shape and strain anisotropy strongly couple the heavy and light hole states and lead to large optical anisotropy with non-orthogonal linearly polarized states misaligned with respect to the crystallographic axes. Owing to a waveguiding experimental configuration, lumines…
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We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane shape and strain anisotropy strongly couple the heavy and light hole states and lead to large optical anisotropy with non-orthogonal linearly polarized states misaligned with respect to the crystallographic axes. Owing to a waveguiding experimental configuration, luminescence polarization along the growth axis has been observed revealing the presence of shear components of the deformation tensor out of the growth plane. Resonant luminescence experiments allowed determining the oscillator strength ratio of the two exciton eigenstates. Valence band mixing governs this ratio and can be very different from dot to dot, however the polarization anisotropy axis is quite fixed inside a scanned area of one \mum^{2} and indicates that the in-plane deformation direction to which it is related has a correlation length of the order of magnitude of one \mum^{2}.
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Submitted 18 October, 2011;
originally announced October 2011.
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Single InAsP/InP quantum dots as telecommunications-band photon sources
Authors:
David Elvira,
Richard Hostein,
Fain Bruno,
Leonard Monniello,
Adrien Michon,
Gregoire Beaudoin,
Remy Braive,
Isabelle Robert-Philip,
Izo Abram,
Isabelle Sagnes,
Alexios Beveratos
Abstract:
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $μ$m), the spectra display sharp distinct peaks resulting from the discrete electron-hole states in the dots, while in the long-wavelength range (above 1.45 $μ$m), these sharp p…
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The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $μ$m), the spectra display sharp distinct peaks resulting from the discrete electron-hole states in the dots, while in the long-wavelength range (above 1.45 $μ$m), these sharp peaks lie on a broad spectral background. In both regions, cascade emission observed by time-resolved photoluminescence confirms that the quantum dots possess discrete exciton and multi-exciton states. Single photon emission is reported for the dots emitting at 1.3 $μ$m through anti-bunching measurements.
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Submitted 11 August, 2011;
originally announced August 2011.
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Demonstration of coherent emission from high-$β$ photonic crystal nanolasers at room temperature
Authors:
Richard Hostein,
Remy Braive,
Luc Le Gratiet,
Anne Talneau,
Gregoire Beaudoin,
Isabelle Robert-Philip,
Isabelle Sagnes,
Alexios Beveratos
Abstract:
We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high spontaneous emission coupling factor beta. Lasing is confirmed by measuring the second order autocorrelation function. A smooth transition from chaotic to coherent emissi…
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We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high spontaneous emission coupling factor beta. Lasing is confirmed by measuring the second order autocorrelation function. A smooth transition from chaotic to coherent emission is observed, and coherent emission is obtained at 8 times the threshold power.
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Submitted 25 March, 2010;
originally announced March 2010.
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Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band
Authors:
Richard Hostein,
Rémy Braive,
Matthieu Larqué,
Ko-Hsin Lee,
Anne Talneau,
Luc Le Gratiet,
Isabelle Robert-Philip,
Isabelle Sagnes,
Alexios Beveratos
Abstract:
We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancem…
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We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancement of the spontaneous emission rate of up a factor of 2.8 at 300 K.
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Submitted 25 March, 2009;
originally announced March 2009.
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Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window
Authors:
Richard Hostein,
Adrien Michon,
Gregoire Beaudoin,
Noelle Gogneau,
Gilles Patriache,
Jean-Yves Marzin,
Isabelle Robert-Philip,
Isabelle Sagnes,
Alexios Beveratos
Abstract:
The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $μ$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a…
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The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $μ$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.
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Submitted 22 July, 2008;
originally announced July 2008.