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Auto-Detection of Tibial Plateau Angle in Canine Radiographs Using a Deep Learning Approach
Authors:
Masuda Akter Tonima,
F M Anim Hossain,
Austin DeHart,
Youmin Zhang
Abstract:
Stifle joint issues are a major cause of lameness in dogs and it can be a significant marker for various forms of diseases or injuries. A known Tibial Plateau Angle (TPA) helps in the reduction of the diagnosis time of the cause. With the state of the art object detection algorithm YOLO, and its variants, this paper delves into identifying joints, their centroids and other regions of interest to d…
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Stifle joint issues are a major cause of lameness in dogs and it can be a significant marker for various forms of diseases or injuries. A known Tibial Plateau Angle (TPA) helps in the reduction of the diagnosis time of the cause. With the state of the art object detection algorithm YOLO, and its variants, this paper delves into identifying joints, their centroids and other regions of interest to draw multiple line axes and finally calculating the TPA. The methods investigated predicts successfully the TPA within the normal range for 80 percent of the images.
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Submitted 24 February, 2021;
originally announced February 2021.
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Nano-manipulation of diamond-based single photon sources
Authors:
E. Ampem-Lassen,
D. A. Simpson,
B. C. Gibson,
S. Trpkovski,
F. M. Hossain,
S. T. Huntington,
K. Ganesan,
L. C. L. Hollenberg,
S. Prawer
Abstract:
The ability to manipulate nano-particles at the nano-scale is critical for the development of active quantum systems. This paper presents a new technique to manipulate diamond nano-crystals at the nano-scale using a scanning electron microscope, nano-manipulator and custom tapered optical fibre probes. The manipulation of a ~ 300 nm diamond crystal, containing a single nitrogen-vacancy centre, o…
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The ability to manipulate nano-particles at the nano-scale is critical for the development of active quantum systems. This paper presents a new technique to manipulate diamond nano-crystals at the nano-scale using a scanning electron microscope, nano-manipulator and custom tapered optical fibre probes. The manipulation of a ~ 300 nm diamond crystal, containing a single nitrogen-vacancy centre, onto the endface of an optical fibre is demonstrated. The emission properties of the single photon source post manipulation are in excellent agreement with those observed on the original substrate.
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Submitted 17 May, 2009;
originally announced May 2009.
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A highly efficient two level diamond based single photon source
Authors:
D. A. Simpson,
E. Ampem-Lassen,
B. C. Gibson,
S. Trpkovski,
F. M. Hossain,
S. T. Huntington,
A. D. Greentree,
L. C. L. Hollenberg,
S. Prawer
Abstract:
An unexplored diamond defect centre which is found to emit stable single photons at a measured rate of 1.6 MHz at room temperature is reported. The novel centre, identified in chemical vapour deposition grown diamond crystals, exhibits a sharp zero phonon line at 734 nm with a full width at half maximum of ~ 4 nm. The photon statistics confirm the center is a single emitter and provides direct e…
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An unexplored diamond defect centre which is found to emit stable single photons at a measured rate of 1.6 MHz at room temperature is reported. The novel centre, identified in chemical vapour deposition grown diamond crystals, exhibits a sharp zero phonon line at 734 nm with a full width at half maximum of ~ 4 nm. The photon statistics confirm the center is a single emitter and provides direct evidence of the first true two-level single quantum system in diamond.
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Submitted 23 March, 2009;
originally announced March 2009.
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Modeling and simulation of polycrystalline ZnO thin-film transistors
Authors:
Faruque M. Hossain,
J. Nishii,
S. Takagi,
A. Ohtomo,
T. Fukumura,
H. Fujioka,
H. Ohno,
H. Koinuma,
M. Kawasaki
Abstract:
Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made on ZnO TFT achieving reasonably good field effect mobilities of 1-10 cm2/Vs, but reveal insufficient device performances probably due to the presence of dens…
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Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made on ZnO TFT achieving reasonably good field effect mobilities of 1-10 cm2/Vs, but reveal insufficient device performances probably due to the presence of dense grain boundaries. We have modeled grain boundaries in ZnO thin film transistors (TFTs) and performed device simulation using a two-dimensional device simulator for understanding the grain boundary effects on the device performance. Actual polycrystalline ZnO TFT modeling is commenced with considering a single grain boundary in the middle of the TFT channel formulating with a Gaussian defect distribution localized in the grain boundary. A double Shottky barrier is formed in the grain boundary and its barrier height are analyzed as functions of defect density and gate bias. The simulation is extended to the TFTs with many grain boundaries to quantitatively analyze the potential profiles developed along the channel. One of the big contrasts of polycrystalline ZnO TFT compared with a polycrystalline Si TFT is that much smaller nanoscaled grain size induces heavy overlap of double Shottky barriers. Through the simulation, we can estimate the total trap state density localized in the grain boundaries for a polycrystalline ZnO by knowing apparent mobility and grain size in the device.
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Submitted 26 August, 2003;
originally announced August 2003.
