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Electric field control of magnetism in Si3N4 gated Pt/Co/Pt heterostructures
Authors:
Jaianth Vijayakumar,
David Bracher,
Tatiana M. Savchenko,
Michael Horisberger,
Frithjof Nolting,
C. A. F. Vaz
Abstract:
In this work we show the presence of a magnetoelectric coupling in silicon-nitride gated Pt/Co/Pt heterostructures using X-ray photoemission electron microscopy (XPEEM). We observe a change in magnetic anisotropy in the form of domain wall nucleation and a change in the rate of domain wall fluctuation as a function of the applied electric field to the sample. We also observe the coexistence of in-…
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In this work we show the presence of a magnetoelectric coupling in silicon-nitride gated Pt/Co/Pt heterostructures using X-ray photoemission electron microscopy (XPEEM). We observe a change in magnetic anisotropy in the form of domain wall nucleation and a change in the rate of domain wall fluctuation as a function of the applied electric field to the sample. We also observe the coexistence of in-plane and out of plane magnetization in Pt/Co/Pt heterostructures in a region around the spin reorientation transition whose formation is attributed to substrate surface roughness comparable to the film thickness; with such domain configuration, we find that the in-plane magnetization is more sensitive to the applied electric field than out of plane magnetization. Although we find an effective magnetoelectric coupling in our system, the presence of charge defects in the silicon nitride membranes hampers a systematic electrostatic control of the magnetization.
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Submitted 8 May, 2019;
originally announced May 2019.
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The new neutron grating interferometer at the ANTARES beamline - Design, Principle, and Applications -
Authors:
Tommy Reimann,
Sebastian Mühlbauer,
Michael Horisberger,
Peter Böni,
Michael Schulz
Abstract:
Neutron grating interferometry is an advanced method in neutron imaging that allows the simultaneous recording of the transmission, the differential phase and the dark-field image. Especially the latter has recently received high interest because of its unique contrast mechanism which marks ultra-small-angle neutron scattering within the sample. Hence, in neutron grating interferometry, an imaging…
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Neutron grating interferometry is an advanced method in neutron imaging that allows the simultaneous recording of the transmission, the differential phase and the dark-field image. Especially the latter has recently received high interest because of its unique contrast mechanism which marks ultra-small-angle neutron scattering within the sample. Hence, in neutron grating interferometry, an imaging contrast is generated by scattering of neutrons off micrometer-sized inhomogeneities. Although the scatterer cannot be resolved it leads to a measurable local decoherence of the beam. Here, a report is given on the design considerations, principles and applications of a new neutron grating interferometer which has recently been implemented at the ANTARES beamline at the Heinz Maier-Leibnitz Zentrum. Its highly flexible design allows to perform experiments such as directional and quantitative dark-field imaging which provide spatially resolved information on the anisotropy and shape of the microstructure of the sample. A comprehensive overview of the nGI principle is given, followed by theoretical considerations to optimize the setup performance for different applications. Furthermore, an extensive characterization of the setup is presented and its abilities are demonstrated on selected case studies: (i) dark-field imaging for material differentiation, (ii) directional dark-field imaging to mark and quantify micrometer anisotropies within the sample and (iii) quantitative dark-field imaging, providing additional size information on the sample's microstructure by probing its autocorrelation function.
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Submitted 29 February, 2016;
originally announced February 2016.
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Effect of Al do** on phase formation and thermal stability of iron nitride thin films
Authors:
Akhil Tayal,
Mukul Gupta,
Nidhi Pandey,
Ajay Gupta,
M. Horisberger,
Jochen Stahn
Abstract:
In the present work, we systematically studied the effect of Al do** on the phase formation of iron nitride (Fe-N) thin films. Fe-N thin films with different concentration of Al (Al=0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 to 100%. The structural and magnetic properties of the films were studied using X-ray diffracti…
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In the present work, we systematically studied the effect of Al do** on the phase formation of iron nitride (Fe-N) thin films. Fe-N thin films with different concentration of Al (Al=0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 to 100%. The structural and magnetic properties of the films were studied using X-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest do** level (2 at.% of Al), nitrogen rich non-magnetic Fe-N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al do** is increased beyond 3at.%, nitrogen rich non-magnetic Fe-N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe-N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Do** of Al at 2at.% improves it marginally, whereas, for 3, 6 and 12at.% Al do**, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe-N and Al-N.
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Submitted 20 May, 2015;
originally announced May 2015.
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Depth dependence of the ionization energy of shallow hydrogen states in ZnO and CdS
Authors:
T. Prokscha,
H. Luetkens,
E. Morenzoni,
G. J. Nieuwenhuys,
A. Suter,
M. Döbeli,
M. Horisberger,
E. Pomjakushina
Abstract:
The characteristics of shallow hydrogen-like muonium (Mu) states in nominally undoped ZnO and CdS (0001) crystals have been studied close to the surface at depths in the range of 10 nm - 180 nm by using low-energy muons, and in the bulk using conventional muSR. The muon implantation depths are adjusted by tuning the energy of the low-energy muons between 2.5 keV and 30 keV. We find that the bulk i…
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The characteristics of shallow hydrogen-like muonium (Mu) states in nominally undoped ZnO and CdS (0001) crystals have been studied close to the surface at depths in the range of 10 nm - 180 nm by using low-energy muons, and in the bulk using conventional muSR. The muon implantation depths are adjusted by tuning the energy of the low-energy muons between 2.5 keV and 30 keV. We find that the bulk ionization energy of the shallow donor-like Mu state is lowered by about 10 meV at a depth of 100 nm, and continuously decreasing on approaching the surface. At a depth of about 10 nm the ionization energy is further reduced by 25-30 meV compared to its bulk value. We attribute this change to the presence of electric fields due to band bending close to the surface, and we determine the depth profile of the electric field within a simple one-dimensional model.
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Submitted 17 October, 2014; v1 submitted 29 August, 2014;
originally announced August 2014.
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Effect of dopants on thermal stability and self-diffusion in iron nitride thin films
Authors:
Akhil Tayal,
Mukul Gupta,
Ajay Gupta,
M. Horisberger,
Jochen Stahn,
Kai Schlage,
H. -C. Wille
Abstract:
We studied the effect of dopants (Al, Ti, Zr) on the thermal stability of iron nitride thin films prepared using a dc magnetron sputtering technique. Structure and magnetic characterization of deposited samples reveal that the thermal stability together with soft magnetic properties of iron nitride thin films get significantly improved with do**. To understand the observed results, detailed Fe a…
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We studied the effect of dopants (Al, Ti, Zr) on the thermal stability of iron nitride thin films prepared using a dc magnetron sputtering technique. Structure and magnetic characterization of deposited samples reveal that the thermal stability together with soft magnetic properties of iron nitride thin films get significantly improved with do**. To understand the observed results, detailed Fe and N self-diffusion measurements were performed. It was observed that N self-diffusion gets suppressed with Al do** whereas Ti or Zr do** results in somewhat faster N diffusion. On the other hand Fe self-diffusion seems to get suppressed with any dopant of which heat of nitride formation is significantly smaller than that of iron nitride. Importantly, it was observed that N self-diffusion plays only a trivial role, as compared to Fe self-diffusion, in affecting the thermal stability of iron nitride thin films. Based on the obtained results effect of dopants on self-diffusion process is discussed.
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Submitted 13 June, 2014;
originally announced June 2014.
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Observation of slow order parameter fluctuations in superconducting films using beta-detected NMR
Authors:
E. Morenzoni,
H. Saadaoui,
D. Wang,
M. Horisberger,
E. Kirk,
W. A. MacFarlane,
G. D. Morris,
K. H. Chow,
M. D. Hossain,
C. P. Levy,
T. J. Parolin,
M. R. Pearson,
Q. Song,
R. F. Kiefl
Abstract:
We report beta-NMR investigations of polarized 8Li implanted in thin Pb and Ag/Nb films. At the critical superconducting temperature, we observe a singular peak in the spin relaxation rate in small longitudinal magnetic fields, which is attributed to fluctuations in the superconducting order parameter. However, the peak is more than an order of magnitude larger than the prediction based on the enh…
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We report beta-NMR investigations of polarized 8Li implanted in thin Pb and Ag/Nb films. At the critical superconducting temperature, we observe a singular peak in the spin relaxation rate in small longitudinal magnetic fields, which is attributed to fluctuations in the superconducting order parameter. However, the peak is more than an order of magnitude larger than the prediction based on the enhancement of the dynamic electron spin susceptibility by superconducting fluctuations and reflects the presence of unexpected slow fluctuations. Furthermore the fluctuations are rapidly suppressed in a small magnetic field, which may explain why they have not been observed previously with conventional NMR or NQR.
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Submitted 21 September, 2011;
originally announced September 2011.
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Formation of iron nitride thin films with Al and Ti additives
Authors:
Rachana Gupta,
Akhil Tayal,
Mukul Gupta,
Ajay Gupta,
M. Horisberger,
J. Stahn
Abstract:
In this work we investigate the process of iron nitride (Fe-N) phase formation using 2 at.% Al or 2 at.% Ti as additives. The samples were prepared with a magnetron sputtering technique using different amount of nitrogen during the deposition process. The nitrogen partial pressure (\pn) was varied between 0-50% (rest Argon) and the targets of pure Fe, [Fe+Ti] and [Fe+Al] were sputtered. The additi…
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In this work we investigate the process of iron nitride (Fe-N) phase formation using 2 at.% Al or 2 at.% Ti as additives. The samples were prepared with a magnetron sputtering technique using different amount of nitrogen during the deposition process. The nitrogen partial pressure (\pn) was varied between 0-50% (rest Argon) and the targets of pure Fe, [Fe+Ti] and [Fe+Al] were sputtered. The addition of small amount of Ti or Al results in improved soft-magnetic properties when sputtered using \pn $\leq$ 10\p. When \pn is increased to 50\p non-magnetic Fe-N phases are formed. We found that iron mononitride (FeN) phases (N at% $\sim$50) are formed with Al or Ti addition at \pn =50% whereas in absence of such addition \eFeN phases (N\pat$\sim$30) are formed. It was found that the overall nitrogen content can be increased significantly with Al or Ti additions. On the basis of obtained result we propose a mechanism describing formation of Fe-N phases Al and Ti additives.
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Submitted 13 September, 2011;
originally announced September 2011.
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Fe and N self-diffusion in non-magnetic Fe:N
Authors:
M. Gupta,
A. Gupta,
R. Gupta,
J. Stahn,
M. Horisberger,
A. Wildes
Abstract:
Fe and N self-diffusion in non-magnetic FeN has been studied using neutron reflectivity. The isotope labelled multilayers, FeN/57Fe:N and Fe:N/Fe:15N were prepared using magnetron sputtering. It was remarkable to observe that N diffusion was slower compared to Fe while the atomic size of Fe is larger compared to N. An attempt has been made to understand the diffusion of Fe and N in non-magnetic Fe…
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Fe and N self-diffusion in non-magnetic FeN has been studied using neutron reflectivity. The isotope labelled multilayers, FeN/57Fe:N and Fe:N/Fe:15N were prepared using magnetron sputtering. It was remarkable to observe that N diffusion was slower compared to Fe while the atomic size of Fe is larger compared to N. An attempt has been made to understand the diffusion of Fe and N in non-magnetic Fe:N.
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Submitted 10 March, 2010;
originally announced March 2010.
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Fe and N self-diffusion in amorphous FeN: A SIMS and neutron reflectivity study
Authors:
S. Chakravarty,
M. Gupta,
A. Gupta,
S. Rajagopalan,
A. K. Balamurugan,
A. K. Tyagi,
U. P. Deshpande,
M. Horisberger,
T. Gutberlet
Abstract:
Simultaneous measurement of self-diffusion of iron and nitrogen in amorphous iron nitride (Fe86N14) using secondary ion mass spectroscopy (SIMS) technique has been done. In addition neutron reflectivity (NR) technique was employed to study the Fe diffusion in the same compound. The broadening of a tracer layer of 57Fe8615N14 sandwiched between Fe86N14 layers was observed after isothermal vacuum…
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Simultaneous measurement of self-diffusion of iron and nitrogen in amorphous iron nitride (Fe86N14) using secondary ion mass spectroscopy (SIMS) technique has been done. In addition neutron reflectivity (NR) technique was employed to study the Fe diffusion in the same compound. The broadening of a tracer layer of 57Fe8615N14 sandwiched between Fe86N14 layers was observed after isothermal vacuum annealing of the films at different temperatures in SIMS measurements. And a decay of the Bragg peak intensity after isothermal annealing was observed in [Fe86N14/57Fe86N14]10 multilayers in NR. Strong structural relaxation of diffusion coefficient was observed below the crystallization temperature of the amorphous phase in both measurements. It was observed from the SIMS measurements that Fe diffusion was about 2 orders of magnitude smaller compared to nitrogen at a given temperature. The NR measurements reveal that the mechanism of Fe self-diffusion is very similar to that in metal-metal type metallic glasses. The structural relaxation time for Fe and N diffusion was found comparable indicating that the obtained relaxation time essentially pertain to the structural relaxation of the amorphous phase.
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Submitted 8 July, 2008;
originally announced July 2008.
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Development of an Indium Bump Bond Process for Silicon Pixel Detectors at PSI
Authors:
Ch. Broennimann,
F. Glaus,
J. Gobrecht,
S. Heising,
M. Horisberger,
R. Horisberger,
H. C. Kaestli,
J. Lehmann,
T. Rohe,
S. Streuli
Abstract:
The hybrid pixel detectors used in the high energy physics experiments currently under construction use a three dimensional connection technique, the so-called bump bonding. As the pitch below 100um, required in these applications, cannot be fullfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflown indium bumps was developed at PSI as pa…
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The hybrid pixel detectors used in the high energy physics experiments currently under construction use a three dimensional connection technique, the so-called bump bonding. As the pitch below 100um, required in these applications, cannot be fullfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflown indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector.
The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflown afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a second reflow is performed for self alignment and obtaining a high mechanical strength.
For the placement of the chips a manual and an automatic machine was constructed. The former is very flexible in handling different chip and module geometries but has a limited throughput while the latter features a much higher grade of automatisation and is therefore much more suited for producing hundreds of modules with a well defined geometry.
The reliability of this process was proven by the successful construction of the PILATUS detector. The construction of PILATUS 6M (60 modules) and the CMS pixel barrel (roughly 800 modules) will start in 2005.
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Submitted 6 January, 2006; v1 submitted 4 October, 2005;
originally announced October 2005.
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Magnetoresistance Anisotropy of Polycrystalline Cobalt Films: Geometrical-Size- and Domain-Effects
Authors:
Woosik Gil,
Detlef Goerlitz,
Michael Horisberger,
Juergen Koetzler
Abstract:
The magnetoresistance (MR) of 10 nm to 200 nm thin polycrystalline Co-films, deposited on glass and insulating Si(100), is studied in fields up to 120 kOe, aligned along the three principal directions with respect to the current: longitudinal, transverse (in-plane), and polar (out-of-plane). At technical saturation, the anisotropic MR (AMR) in polar fields turns out to be up to twice as large as…
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The magnetoresistance (MR) of 10 nm to 200 nm thin polycrystalline Co-films, deposited on glass and insulating Si(100), is studied in fields up to 120 kOe, aligned along the three principal directions with respect to the current: longitudinal, transverse (in-plane), and polar (out-of-plane). At technical saturation, the anisotropic MR (AMR) in polar fields turns out to be up to twice as large as in transverse fields, which resembles the yet unexplained geometrical size-effect (GSE), previously reported for Ni- and Permalloy films. Upon increasing temperature, the polar and transverse AMR's are reduced by phonon-mediated sd-scattering, but their ratio, i.e. the GSE remains unchanged. Basing on Potters's theory [Phys.Rev.B 10, 4626(1974)], we associate the GSE with an anisotropic effect of the spin-orbit interaction on the sd-scattering of the minority spins due to a film texture. Below magnetic saturation, the magnitudes and signs of all three MR's depend significantly on the domain structures depicted by magnetic force microscopy. Based on hysteresis loops and taking into account the GSE within an effective medium approach, the three MR's are explained by the different magnetization processes in the domain states. These reveal the importance of in-plane uniaxial anisotropy and out-of-plane texture for the thinnest and thickest films, respectively.
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Submitted 9 June, 2005;
originally announced June 2005.
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Observation of non-exponential magnetic penetration profiles in the Meissner state - A manifestation of non-local effects in superconductors
Authors:
A. Suter,
E. Morenzoni,
N. Garifianov,
R. Khasanov,
E. Kirk,
H. Luetkens,
T. Prokscha,
M. Horisberger
Abstract:
Implanting fully polarized low energy muons on the nanometer scale beneath the surface of a superconductor in the Meissner state enabled us to probe the evanescent magnetic field profile B(z)(0<z<=200nm measured from the surface). All the investigated samples [Nb: kappa \simeq 0.7(2), Pb: kappa \simeq 0.6(1), Ta: kappa \simeq 0.5(2)] show clear deviations from the simple exponential B(z) expecte…
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Implanting fully polarized low energy muons on the nanometer scale beneath the surface of a superconductor in the Meissner state enabled us to probe the evanescent magnetic field profile B(z)(0<z<=200nm measured from the surface). All the investigated samples [Nb: kappa \simeq 0.7(2), Pb: kappa \simeq 0.6(1), Ta: kappa \simeq 0.5(2)] show clear deviations from the simple exponential B(z) expected in the London limit, thus revealing the non-local response of these superconductors. From a quantitative analysis within the Pippard and BCS models the London penetration depth lambda_L is extracted. In the case of Pb also the clean limit coherence length xi0 is obtained. Furthermore we find that the temperature dependence of the magnetic penetration depth follows closely the two-fluid expectation 1/lambda^2 \propto 1-(T/T_c)^4. While B(z) for Nb and Pb are rather well described within the Pippard and BCS models, for Ta this is only true to a lesser degree. We attribute this discrepancy to the fact that the superfluid density is decreased by approaching the surface on a length scale xi0. This effect, which is not taken self-consistently into account in the mentioned models, should be more pronounced in the lowest kappa regime consistently with our findings.
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Submitted 25 April, 2005;
originally announced April 2005.
