Showing 1–28 of 28 results for author: Hopkins, P E

Disorder controlled sound speed and thermal conductivity of hybrid metalcone films

Authors: Md Shafkat Bin Hoque, Rachel A. Nye, Saman Zare, Stephanie Atkinson, Siyao Wang, Andrew H. Jones, John T. Gaskins, Gregory Parsons, Patrick E. Hopkins

Abstract: The multifaceted applications of polymers are often limited by their thermal conductivity. Therefore, understanding the mechanisms of thermal transport in polymers is of vital interest. Here, we leverage molecular layer deposition to grow three types of hybrid metalcone (i.e., alucone, zincone, and tincone) films and study their thermal and acoustic properties. The thermal conductivity of the hybr… ▽ More The multifaceted applications of polymers are often limited by their thermal conductivity. Therefore, understanding the mechanisms of thermal transport in polymers is of vital interest. Here, we leverage molecular layer deposition to grow three types of hybrid metalcone (i.e., alucone, zincone, and tincone) films and study their thermal and acoustic properties. The thermal conductivity of the hybrid polymer films ranges from 0.43 to 1.14 W/mK. Using kinetic theory, we trace the origin of thermal conductivity difference to sound speed change, which is dictated by the structural disorder within the films. Changing the disorder has negligible impacts on volumetric heat capacity and vibrational lifetimes. Our findings provide means to improve the thermal conductivity of organic, hybrid, and inorganic polymer films. △ Less

Submitted 20 February, 2024; originally announced February 2024.

Ultrafast evanescent heat transfer across solid interfaces via hyperbolic phonon polaritons in hexagonal boron nitride

Authors: William Hutchins, John A. Tomko, Dan M. Hirt, Saman Zare, Joseph R. Matson, Katja Diaz-Granados, Mingze He, Thomas Pfeifer, Jiahan Li, James Edgar, Jon-Paul Maria, Joshua D. Caldwell, Patrick E. Hopkins

Abstract: The efficiency of phonon-mediated heat transport is limited by the intrinsic atomistic properties of materials, seemingly providing an upper limit to heat transfer in materials and across their interfaces. The typical speeds of conductive transport, which are inherently limited by the chemical bonds and atomic masses, dictate how quickly heat will move in solids. Given that phonon-polaritons, or c… ▽ More The efficiency of phonon-mediated heat transport is limited by the intrinsic atomistic properties of materials, seemingly providing an upper limit to heat transfer in materials and across their interfaces. The typical speeds of conductive transport, which are inherently limited by the chemical bonds and atomic masses, dictate how quickly heat will move in solids. Given that phonon-polaritons, or coupled phonon-photon modes, can propagate at speeds approaching 1 percent of the speed of light - orders of magnitude faster than transport within a pure diffusive phonon conductor - we demonstrate that volume-confined, hyperbolic phonon-polariton(HPhP) modes supported by many biaxial polar crystals can couple energy across solid-solid interfaces at an order of magnitude higher rates than phonon-phonon conduction alone. Using pump-probe thermoreflectance with a mid-infrared, tunable, probe pulse with sub-picosecond resolution, we demonstrate remote and spectrally selective excitation of the HPhP modes in hexagonal boron nitride in response to radiative heating from a thermally emitting gold source. Our work demonstrates a new avenue for interfacial heat transfer based on broadband radiative coupling from a hot spot in a gold film to hBN HPhPs, independent of the broad spectral mismatch between the pump(visible) and probe(mid-IR) pulses employed. This methodology can be used to bypass the intrinsically limiting phonon-phonon conductive pathway, thus providing an alternative means of heat transfer across interfaces. Further, our time-resolved measurements of the temperature changes of the HPhP modes in hBN show that through polaritonic coupling, a material can transfer heat across and away from an interface at rates orders of magnitude faster than diffusive phonon speeds intrinsic to the material, thus demonstrating a pronounced thermal transport enhancement in hBN via phonon-polariton coupling. △ Less

Submitted 20 February, 2024; v1 submitted 17 January, 2024; originally announced January 2024.

Ruddlesden-Popper chalcogenides push the limit of mechanical stiffness and glass-like thermal conductivity in crystals

Authors: Md Shafkat Bin Hoque, Eric R. Hoglund, Boyang Zhao, De-Liang Bao, Hao Zhou, Sandip Thakur, Eric Osei-Agyemang, Khalid Hattar, Ethan A. Scott, Mythili Surendran, John A. Tomko, John T. Gaskins, Kiumars Aryana, Sara Makarem, Ganesh Balasubramanian, Ashutosh Giri, Tianli Feng, Jordan A. Hachtel, Jayakanth Ravichandran, Sokrates T. Pantelides, Patrick E. Hopkins

Abstract: Insulating materials featuring ultralow thermal conductivity for diverse applications also require robust mechanical properties. Conventional thinking, however, which correlates strong bonding with high atomic-vibration-mediated heat conduction, led to diverse weakly bonded materials that feature ultralow thermal conductivity and low elastic moduli. One must, therefore, search for strongly-bonded… ▽ More Insulating materials featuring ultralow thermal conductivity for diverse applications also require robust mechanical properties. Conventional thinking, however, which correlates strong bonding with high atomic-vibration-mediated heat conduction, led to diverse weakly bonded materials that feature ultralow thermal conductivity and low elastic moduli. One must, therefore, search for strongly-bonded materials in which heat transport is impeded by other means. Here, we report intrinsic, glass-like, ultralow thermal conductivity and ultrahigh elastic-modulus/thermal-conductivity ratio in single-crystalline, BaZrS3-derived, Ruddlesden-Popper phases Ban+1ZrnS3n+1, n = 2, 3. Their key features are strong anharmonicity and intra-unit-cell rock-salt blocks. The latter produce strongly bonded intrinsic superlattices, impeding heat conduction by broadband reduction of phonon velocities and mean free paths and concomitant strong phonon localization. The present study initiates a paradigm of "mechanically stiff phonon glasses". △ Less

Submitted 5 December, 2023; originally announced December 2023.

Photoconductive Effects in Single Crystals of BaZrS$_3$

Authors: Boyang Zhao, Huandong Chen, Ragib Ahsan, Fei Hou, Eric R Hoglund, Shantanu Singh, Huan Zhao, Han Htoon, Andrey Krayev, Maruda Shanmugasundaram, Patrick E Hopkins, Jan Seidel, Rehan Kapadia, Jayakanth Ravichandran

Abstract: Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZr… ▽ More Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$. △ Less

Submitted 4 October, 2023; originally announced October 2023.

Validation of the Wiedemann-Franz Law in solid and molten tungsten above 2000 K through thermal conductivity measurements via steady state temperature differential radiometry

Authors: Milena Milich, Hunter B. Schonfeld, Konstantinos Boboridis, Davide Robba, Luka Vlahovic, Rudy Konings, Jeffrey L. Braun, John T. Gaskins, Niraj Bhatt, Ashutosh Giri, Patrick E. Hopkins

Abstract: We measure the thermal conductivity of solid and molten tungsten using Steady State Temperature Differential Radiometry. We demonstrate that the thermal conductivity can be well described by application of Wiedemann-Franz Law to electrical resistivity data, thus suggesting the validity of Wiedemann-Franz Law to capture the electronic thermal conductivity of metals in their molten phase. We further… ▽ More We measure the thermal conductivity of solid and molten tungsten using Steady State Temperature Differential Radiometry. We demonstrate that the thermal conductivity can be well described by application of Wiedemann-Franz Law to electrical resistivity data, thus suggesting the validity of Wiedemann-Franz Law to capture the electronic thermal conductivity of metals in their molten phase. We further support this conclusion using ab initio molecular dynamics simulations with a machine-learned potential. Our results show that at these high temperatures, the vibrational contribution to thermal conductivity is negligible compared to the electronic component. △ Less

Submitted 2 September, 2023; originally announced September 2023.

Predictions and Measurements of Thermal Conductivity of Ceramic Materials at High Temperature

Authors: Zherui Han, Zixin Xiong, William T. Riffe, Hunter B. Schonfeld, Mauricio Segovia, Jiawei Song, Haiyan Wang, Xianfan Xu, Patrick E. Hopkins, Amy Marconnet, Xiulin Ruan

Abstract: The lattice thermal conductivity ($κ$) of two ceramic materials, cerium dioxide (CeO$_2$) and magnesium oxide (MgO), is computed up to 1500 K using first principles and the phonon Boltzmann Transport Equation (PBTE) and compared to time-domain thermoreflectance (TDTR) measurements up to 800 K. Phonon renormalization and the four-phonon effect, along with high temperature thermal expansion, are int… ▽ More The lattice thermal conductivity ($κ$) of two ceramic materials, cerium dioxide (CeO$_2$) and magnesium oxide (MgO), is computed up to 1500 K using first principles and the phonon Boltzmann Transport Equation (PBTE) and compared to time-domain thermoreflectance (TDTR) measurements up to 800 K. Phonon renormalization and the four-phonon effect, along with high temperature thermal expansion, are integrated in our \textit{ab initio} molecular dynamics (AIMD) calculations. This is done by first relaxing structures and then fitting to a set of effective force constants employed in a temperature-dependent effective potential (TDEP) method. Both three-phonon and four-phonon scattering rates are computed based on these effective force constants. Our calculated thermal conductivities from the PBTE solver agree well with literature and our TDTR measurements. Other predicted thermal properties including thermal expansion, frequency shift, and phonon linewidth also compare well with available experimental data. Our results show that high temperature softens phonon frequency and reduces four-phonon scattering strength in both ceramics. Compared to MgO, we find that CeO$_2$ has weaker four-phonon effect and renormalization greatly reduces its four-phonon scattering rates. △ Less

Submitted 18 May, 2023; originally announced May 2023.

Journal ref: Phys. Rev. B 108, 184306 (2023)

Design rules for the thermal and elastic properties of rare-earth disilicates

Authors: Cormac Toher, Mackenzie J. Ridley, Kathleen Q. Tomko, David Hans Olson, Stefano Curtarolo, Patrick E. Hopkins, Elizabeth J. Opila

Abstract: Rare-earth silicates are the current standard material for use as environmental barrier coatings for SiC-based ceramic matrix composites as hot-section components in gas-turbine engines. Expanding the design space to all available rare-earth elements to facilitate optimizing functionality requires an understanding of systematic trends in $RE_2$Si$_2$O$_7$ properties. In this work, we combine first… ▽ More Rare-earth silicates are the current standard material for use as environmental barrier coatings for SiC-based ceramic matrix composites as hot-section components in gas-turbine engines. Expanding the design space to all available rare-earth elements to facilitate optimizing functionality requires an understanding of systematic trends in $RE_2$Si$_2$O$_7$ properties. In this work, we combine first-principles calculations with experimental measurements of Young's modulus, coefficient of thermal expansion, and thermal conductivity for a range of different $RE_2$Si$_2$O$_7$ compositions and phases. Clear trends are observed in these properties as a function of the radius of the rare-earth cation. In the case of Young's modulus and thermal expansion, these trends also hold for multi-component systems; while the thermal conductivity of multi-component systems is noticeably lower, indicating the potential of such materials to also act as thermal barriers. These results provide design rules for develo** new thermal and environmental barrier coatings with stiffness and thermal expansion engineered to match that of the substrate, while simultaneously having reduced thermal conductivity. △ Less

Submitted 4 March, 2023; originally announced March 2023.

Comments: 10 pages, 5 figures

On the thermal and mechanical properties of Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$O across the high-entropy to entropy-stabilized transition

Authors: Christina M. Rost, Daniel L. Schmuckler, Clifton Bumgardner, Md Shafkat Bin Hoque, David R. Diercks, John T. Gaskins, Jon-Paul Maria, Geoffrey L. Brennecka, Xiadong Li, Patrick E. Hopkins

Abstract: As various property studies continue to emerge on high entropy and entropy-stabilized ceramics, we seek further understanding of property changes across the phase boundary between \enquote{high-entropy} and \enquote{entropy-stabilized}. The thermal and mechanical properties of bulk ceramic entropy stabilized oxide composition Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$O are investigated acr… ▽ More As various property studies continue to emerge on high entropy and entropy-stabilized ceramics, we seek further understanding of property changes across the phase boundary between \enquote{high-entropy} and \enquote{entropy-stabilized}. The thermal and mechanical properties of bulk ceramic entropy stabilized oxide composition Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$O are investigated across this critical transition temperature via the transient plane-source method, temperature-dependent X-ray diffraction, and nano-indentation. Thermal conductivity remains constant within uncertainty across the multi-to-single phase transition at a value of ~2.5 W/mK, while the linear coefficient of thermal expansion increases nearly 24 % from 10.8 to 14.1 x 10$^{-6}$ K$^{-1}$. Mechanical softening is also observed across the transition. △ Less

Submitted 27 November, 2022; originally announced November 2022.

Comments: 14 pages, 4 figures, to be published in APL Materials

Direct Visualization of Localized Vibrations at Complex Grain Boundaries

Authors: Eric R. Hoglund, De-Liang Bao, Andrew O'Hara, Thomas W. Pfeifer, Md Shafkat Bin Hoque, Sara Makarem, James M. Howe, Sokrates T. Pantelides, Patrick E. Hopkins, Jordan A. Hachtel

Abstract: Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The change in functionality at a GB is a direct result of unique local atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared-optical,… ▽ More Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The change in functionality at a GB is a direct result of unique local atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared-optical, and thermal properties. Here, we examine a SrTiO3 GB using atomic-resolution aberration-corrected scanning transmission electron microscopy (STEM) and ultra-high-energy-resolution monochromated electron energy-loss spectroscopy (EELS), in conjunction with density functional theory (DFT) calculations. This combination enables the direct correlation of the GB structure, composition, and chemical bonding with atomic vibrations within the GB dislocation-cores. We observe that nonstoichiometry and changes in coordination and bonding at the GB leads to a redistribution of vibrational states at the GB and its dislocation-cores relative to the bounding grains. The access to localized vibrations within GBs provided by ultrahigh spatial/spectral resolution EELS correlated with atomic coordination, bonding, and stoichiometry and validated by theory, provides a direct route to quantifying the impact of individual boundaries on macroscopic properties. △ Less

Submitted 24 August, 2022; v1 submitted 30 July, 2022; originally announced August 2022.

Comments: 41 pages, 15 figures

Orientation Controlled Anisotropy in Single Crystals of Quasi-1D BaTiS3

Authors: Boyang Zhao, Md Shafkat Bin Hoque, Gwan Yeong Jung, Hongyan Mei, Shantanu Singh, Guodong Ren, Milena Milich, Qinai Zhao, Nan Wang, Huandong Chen, Shanyuan Niu, Sang-Jun Lee, Cheng-Tai Kuo, Jun-Sik Lee, John A. Tomko, Han Wang, Mikhail Kats, Rohan Mishra, Patrick E Hopkins, J. Ravichandran

Abstract: Low-dimensional materials with chain-like (one-dimensional) or layered (twodimensional) structures are of significant interest due to their anisotropic electrical, optical, thermal properties. One material with chain-like structure, BaTiS3 (BTS), was recently shown to possess giant in-plane optical anisotropy and glass-like thermal conductivity. To understand the origin of these effects, it is nec… ▽ More Low-dimensional materials with chain-like (one-dimensional) or layered (twodimensional) structures are of significant interest due to their anisotropic electrical, optical, thermal properties. One material with chain-like structure, BaTiS3 (BTS), was recently shown to possess giant in-plane optical anisotropy and glass-like thermal conductivity. To understand the origin of these effects, it is necessary to fully characterize the optical, thermal, and electronic anisotropy of BTS. To this end, BTS crystals with different orientations (aand c-axis orientations) were grown by chemical vapor transport. X-ray absorption spectroscopy (XAS) was used to characterize the local structure and electronic anisotropy of BTS. Fourier transform infrared (FTIR) reflection/transmission spectra show a large inplane optical anisotropy in the a-oriented crystals, while the c-axis oriented crystals were nearly isotropic in-plane. BTS platelet crystals are promising uniaxial materials for IR optics with their optic axis parallel to the c-axis. The thermal conductivity measurements revealed a thermal anisotropy of ~4.5 between the c- and a-axis. Time-domain Brillouin scattering showed that the longitudinal sound speed along the two axes is nearly the same suggesting that the thermal anisotropy is a result of different phonon scattering rates. △ Less

Submitted 7 April, 2022; originally announced April 2022.

Plasma-induced surface cooling

Authors: John A. Tomko, Michael J. Johnson, David R. Boris, Tzvetelina B. Petrova, Scott G. Walton, Patrick E. Hopkins

Abstract: Here we show that, despite a massive incident flux of energetic species, plasmas can induce transient cooling of a material surface. Using time-resolved optical thermometry in-situ with this plasma excitation, we reveal the novel underlying physics that drive this `plasma cooling' that is driven by the diverse chemical and energetic species that comprise this fourth state of matter. We show that t… ▽ More Here we show that, despite a massive incident flux of energetic species, plasmas can induce transient cooling of a material surface. Using time-resolved optical thermometry in-situ with this plasma excitation, we reveal the novel underlying physics that drive this `plasma cooling' that is driven by the diverse chemical and energetic species that comprise this fourth state of matter. We show that the photons and massive particles in the plasma impart energy to different chemical species on a surface, leading to local and temporally changing temperatures that lead to both increases and decreases in temperature on the surface of the sample, even though energy is being imparted to the material. This balance comes from the interplay between chemical reactions, momentum transfer, and energy exchange which occur on different time scales over the course of picoseconds to milliseconds. Thus, we show that through energetically exciting a material with a plasma, we can induce cooling, which can lead to revolutionary advances in refrigeration and thermal mitigation with this new process that is not inhibited by the same limitations in the current state-of-the-art systems. △ Less

Submitted 4 August, 2021; originally announced August 2021.

Nanoscale Phonon Spectroscopy Reveals Emergent Interface Vibrational Structure of Superlattices

Authors: Eric R. Hoglund, De-Liang Bao, Andrew O'Hara, Sara Makarem, Zachary T. Piontkowski, Joseph R. Matson, Ajay K. Yadav, Ryan C. Haisimaier, Roman Engel-Herbert, Jon F. Ihlefeld, Jayakanth Ravichandran, Ramamoorthy Ramesh, Joshua D. Caldwell, Thomas E. Beechem, John A. Tomko, Jordan A. Hachtel, Sokrates T. Pantelides, Patrick E. Hopkins, James M. Howe

Abstract: As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity… ▽ More As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity $^{7,8}$, has only been inferred in experiments indirectly. While it is accepted that intrinsic phonons change near boundaries $^{9,10}$, the physical mechanisms and length-scales through which interfacial effects influence materials remain unclear. Herein, we demonstrate the localized vibrational response associated with the interfaces in SrTiO$_3$-CaTiO$_3$ superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy and density-functional-theory calculations. Symmetries atypical of either constituent material are observed within a few atomic planes near the interface. The local symmetries create local phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. The results provide direct visualization and quantification, illustrating the progression of the local symmetries and interface vibrations as they come to determine the vibrational response of an entire superlattice; stated differently, the progression from a material with interfaces, to a material dominated by interfaces, to a material of interfaces as the period decreases. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behavior. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids having emergent infrared and thermal responses. △ Less

Submitted 4 October, 2021; v1 submitted 20 May, 2021; originally announced May 2021.

Comments: 38 pages, 3 figures, 10 supplemental figures

Journal ref: Nature 601, 556 (2022)

Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance

Authors: Md Shafkat Bin Hoque, Yee Rui Koh, Kiumars Aryana, Eric Hoglund, Jeffrey L. Braun, David H. Olson, John T. Gaskins, Habib Ahmad, Mirza Mohammad Mahbube Elahi, Jennifer K. Hite, Zayd C. Leseman, W. Alan Doolittle, Patrick E. Hopkins

Abstract: Measuring the thermal conductivity of sub-surface buried substrates are of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths (TPD). Here, we experimentally and numerically investigate the TPD of recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore… ▽ More Measuring the thermal conductivity of sub-surface buried substrates are of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths (TPD). Here, we experimentally and numerically investigate the TPD of recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore its capability for measuring the thermal properties of buried substrates. The conventional definition of the TPD does not truly represent the upper limit of how far beneath the surface SSTR can probe. For estimating the uncertainty of SSTR measurements of a buried substrate a priori, sensitivity calculations provide the best means. Thus, detailed sensitivity calculations are provided to guide future measurements. Due to the steady-state nature of SSTR, it can measure the thermal conductivity of buried substrates typically inaccessible by traditional pump-probe techniques, exemplified by measuring three control samples. We also discuss the required criteria for SSTR to isolate the thermal properties of a buried film. Our study establishes SSTR as a suitable technique for thermal characterizations of sub-surface buried substrates in typical device geometries. △ Less

Submitted 25 February, 2021; originally announced February 2021.

Journal ref: Review of Scientific Instruments 92, 064906 (2021)

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Authors: Kiumars Aryana, John T. Gaskins, Joyeeta Nag, Derek A. Stewart, Zhaoqiang Bai, Saikat Mukhopadhyay, John C. Read, David H. Olson, Eric R. Hoglund, James M. Howe, Ashutosh Giri, Michael K. Grobis, Patrick E. Hopkins

Abstract: Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close… ▽ More Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs. △ Less

Submitted 10 November, 2020; originally announced November 2020.

Report number: Nature Communications 12, 774 (2021)

Long-lived modulation of plasmonic absorption by ballistic thermal injection

Authors: John A. Tomko, Evan L. Runnerstrom, Yi-Siang Wang, Joshua R. Nolen, David H. Olson, Kyle P. Kelley, Angela Cleri, Josh Nordlander, Joshua D. Caldwell, Oleg V. Prezhdo, Jon-Paul Maria, Patrick E. Hopkins

Abstract: Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast pl… ▽ More Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast plasmonic measurements that provide a direct measure of electronic distributions, both spatially and temporally, following optical excitation of a metal-semiconductor heterostructure. For the first time, we explicitly show that in cases of strong non-equilibrium, a novel energy transduction mechanism arises at the metal/semiconductor interface. We find that hot electrons in the metal contact transfer their energy to pre-existing electrons in the semiconductor, without transfer of charge. These experimental results findings are well-supported by both rigorous multilayer optical modeling and first-principle, ab initio calculations. △ Less

Submitted 20 May, 2020; originally announced May 2020.

Monolayer Vanadium-doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor

Authors: Fu Zhang, Boyang Zheng, Amritanand Sebastian, Hans Olson, Mingzu Liu, Kazunori Fujisawa, Yen Thi Hai Pham, Valery Ortiz Jimenez, Vijaysankar Kalappattil, Leixin Miao, Tianyi Zhang, Rahul Pendurthi, Yu Lei, Ana Laura Elías, Yuanxi Wang, Nasim Alem, Patrick E. Hopkins, Saptarshi Das, Vincent H. Crespi, Manh-Huong Phan, Mauricio Terrones

Abstract: Dilute magnetic semiconductors, achieved through substitutional do** of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley… ▽ More Dilute magnetic semiconductors, achieved through substitutional do** of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room-temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal do** levels without dopant aggregation. Here we describe room-temperature ferromagnetic order obtained in semiconducting vanadium-doped tungsten disulfide monolayers produced by a reliable single-step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation. These monolayers develop p-type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of a few atomic percent and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium-vanadium spacings, as supported by transmission electron microscopy, magnetometry and first-principles calculations. Room-temperature two-dimensional dilute magnetic semiconductors provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures them into the realm of practical application. △ Less

Submitted 5 May, 2020; originally announced May 2020.

Heat Diffusion Imaging: In-Plane Thermal Conductivity Measurement of Thin Films in a Broad Temperature Range

Authors: T. Zhu, D. H. Olson, P. E. Hopkins, M. Zebarjadi

Abstract: This work combines the principles of the heat spreader method and imaging capability of the thermoreflectance measurements to measure the in-plane thermal conductivity of thin-films without the requirement of film suspension or multiple thermometer deposition. We refer to this hybrid technique as heat diffusion imaging. The thermoreflectance imaging system provides a temperature distribution map a… ▽ More This work combines the principles of the heat spreader method and imaging capability of the thermoreflectance measurements to measure the in-plane thermal conductivity of thin-films without the requirement of film suspension or multiple thermometer deposition. We refer to this hybrid technique as heat diffusion imaging. The thermoreflectance imaging system provides a temperature distribution map across the film surface. The in-plane thermal conductivity can be extracted from the temperature decay profile. By coupling the system with a cryostat, we were able to conduct measurements from 40 K to 400 K. Silicon thin film samples with and without periodic holes were measured and compared with in-plane time-domain thermoreflectance (TDTR) measurement and literature data as validation for heat diffusion imaging. △ Less

Submitted 15 April, 2020; originally announced April 2020.

Comments: 7 pages, 5 figures

Dual-Phase High-Entropy Ultra-High Temperature Ceramics

Authors: Mingde Qin, Joshua Gild, Chongze Hu, Haoren Wang, Md Shafkat Bin Hoque, Jeffrey L. Braun, Tyler J. Harrington, Patrick E. Hopkins, Kenneth S. Vecchio, Jian Luo

Abstract: A series of dual-phase high-entropy ultrahigh temperature ceramics (DPHE-UHTCs) are fabricated starting from N binary borides and (5-N) binary carbides powders. >~99% relative densities have been achieved with virtually no native oxides. These DPHE-UHTCs consist of a hexagonal high-entropy boride (HEB) phase and a cubic high-entropy carbide (HEC) phase. A thermodynamic relation that governs the co… ▽ More A series of dual-phase high-entropy ultrahigh temperature ceramics (DPHE-UHTCs) are fabricated starting from N binary borides and (5-N) binary carbides powders. >~99% relative densities have been achieved with virtually no native oxides. These DPHE-UHTCs consist of a hexagonal high-entropy boride (HEB) phase and a cubic high-entropy carbide (HEC) phase. A thermodynamic relation that governs the compositions of the HEB and HEC phases in equilibrium is discovered and a thermodynamic model is proposed. These DPHE-UHTCs exhibit tunable grain size, Vickers microhardness, Young' and shear moduli, and thermal conductivity. The DPHE-UHTCs have higher hardness than the weighted linear average of the two single-phase HEB and HEC, which are already harder than the rule-of-mixture averages of individual binary borides and carbides. This study extends the state of the art by introducing dual-phase high-entropy ceramics (DPHECs), which provide a new platform to tailor various properties via changing the phase fraction and microstructure. △ Less

Submitted 21 May, 2020; v1 submitted 22 February, 2020; originally announced February 2020.

Journal ref: Journal of the European Ceramic Society 2020

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

Authors: Zhe Cheng, Yee Rui Koh, Abdullah Mamun, **g**g Shi, Tingyu Bai, Kenny Huynh, Luke Yates, Zeyu Liu, Ruiyang Li, Eungkyu Lee, Michael Liao, Yekan Wang, Hsuan Ming Yu, Maki Kushimoto, Tengfei Luo, Mark S. Goorsky, Patrick E. Hopkins, Hiroshi Amano, Asif Khan, Samuel Graham

Abstract: AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to i… ▽ More AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices. △ Less

Submitted 4 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Materials 4, 044602 (2020)

Titanium Contacts to MoS2 with Interfacial Oxide: Interface Chemistry and Thermal Transport

Authors: Keren M. Freedy, David H. Olson, Patrick E. Hopkins, Stephen J. McDonnell

Abstract: The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate Au/Ti/TiOx/MoS2 samples as well as Au/Ti/MoS2 and Au/TiOx/MoS2 for comparison. Elemental titanium reacts strongly with MoS2 whereas no interface reactions are… ▽ More The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate Au/Ti/TiOx/MoS2 samples as well as Au/Ti/MoS2 and Au/TiOx/MoS2 for comparison. Elemental titanium reacts strongly with MoS2 whereas no interface reactions are observed in the two types of samples containing TiOx/MoS2 interfaces. Using time domain thermoreflectance for the measurement of thermal boundary conductance, we find that samples contacted with Ti and a thin TiOx layer at the interface (less than or equal to 1.5 nm) exhibit the same behavior as samples contacted solely with pure Ti. The Au/TiOx/MoS2 samples exhibit approximately 20% lower thermal boundary conductance, despite having the same MoS2 interface chemistry as the samples with thin oxide at the Ti/MoS2 interface. We identify the mechanism for this phenomenon, attributing it to the different interfaces with the top Au contact. Our work demonstrates that the use of thin interfacial oxide layers to reduce electrical contact resistance does not compromise heat flow in 2D electronic devices. We note that the thicknesses of the Ti and TiOx layers must be considered for optimal thermal transport. △ Less

Submitted 25 June, 2019; originally announced June 2019.

Comments: 24 pages, 10 figures, 2 tables. Submitted to Phys Rev Materials

Journal ref: Phys. Rev. Materials 3, 104001 (2019)

Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces

Authors: Zhe Cheng, Yee Rui Koh, Habib Ahmad, Renjiu Hu, **g**g Shi, Michael E. Liao, Yekan Wang, Tingyu Bai, Ruiyang Li, Eungkyu Lee, Evan A. Clinton, Christopher M. Matthews, Zachary Engel, Yates, Tengfei Luo, Mark S. Goorsky, William Doolittle, Zhiting Tian, Patrick E. Hopkins, Samuel Graham

Abstract: A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanis… ▽ More A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanisms such as elastic and inelastic phonon scattering as well as electron phonon coupling in the metal and across the interface. All these factors jointly affect thermal boundary conductance (TBC). As a result, the experimentally measured interfaces may not be the same as the ideally modelled interfaces, thus obfuscating any conclusions drawn from experimental and modeling comparisons. This work provides a systematic study of interfacial thermal conductance across well controlled and ultraclean epitaxial (111) Al parallel (0001) sapphire interfaces, known as harmonic matched interface. A comparison with thermal models such as atomistic Green s function (AGF) and a nonequilibrium Landauer approach shows that elastic phonon scattering dominates the interfacial thermal transport of Al sapphire interface. By scaling the TBC with the Al heat capacity, a nearly constant transmission coefficient is observed, indicating that the phonons on the Al side limits the Al sapphire TBC. This nearly constant transmission coefficient validates the assumptions in AGF and nonequilibrium Landauer calculations. Our work not only provides a benchmark for interfacial thermal conductance across metal nonmetal interfaces and enables a quantitative study of TBC to validate theoretical thermal carrier transport mechanisms, but also acts as a reference when studying how other factors impact TBC. △ Less

Submitted 23 September, 2019; v1 submitted 13 June, 2019; originally announced June 2019.

Journal ref: Communications Physics 3.1 (2020): 1-8

Titanium Contacts to Graphene: Process-Induced Variability in Electronic and Thermal Transport

Authors: Keren M. Freedy, Ashutosh Giri, Brian M. Foley, Matthew R. Barone, Patrick E. Hopkins, Stephen McDonnell

Abstract: Contact Resistance (RC) is a major limiting factor in the performance of graphene devices. RC is sensitive to the quality of the interface and the composition of the contact, which are affected by the graphene transfer process and contact deposition conditions. In this work, a linear correlation is observed between the composition of Ti contacts, characterized by X-ray photoelectron spectroscopy,… ▽ More Contact Resistance (RC) is a major limiting factor in the performance of graphene devices. RC is sensitive to the quality of the interface and the composition of the contact, which are affected by the graphene transfer process and contact deposition conditions. In this work, a linear correlation is observed between the composition of Ti contacts, characterized by X-ray photoelectron spectroscopy, and the Ti/graphene (Gr) contact resistance measured by the transfer length method. We find that contact composition is tunable via deposition rate and base pressure. Reactor base pressure is found to effect the resultant contact resistance. The effect of contact deposition conditions on thermal transport measured by time-domain thermoreflectance is also reported and interfaces with higher oxide composition appear to result in a lower thermal boundary conductance. Possible origins of this thermal boundary conductance change with oxide composition are discussed. △ Less

Submitted 1 December, 2017; originally announced December 2017.

Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport

Authors: John T. Gaskins, George Kotsonis, Ashutosh Giri, Christopher T. Shelton, Edward Sachet, Zhe Cheng, Brian M. Foley, Zeyu Liu, Shenghong Ju, Junichiro, Mark S. Goorsky, Samuel Graham, Tengfei Luo, Asegun Henry, Jon-Paul Maria, Patrick E. Hopkins

Abstract: We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous ex… ▽ More We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous experimental data, suggest that the TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the "vibrational mismatch" concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as $490\lbrack +150, -110\rbrack$ MW m$^{-2}$ K$^{-1}$. The disagreement among the DMM and AGF and the experimental data these elevated temperatures suggests a non-negligible contribution from additional modes contributing to TBC that not accounted for in the fundamental assumptions of these harmonic formalisms, such as inelastic scattering. Given the high quality of these ZnO/GaN interface, these results provide an invaluable critical and quantitive assessment of the accuracy of assumptions in the current state of the art of computational approaches for predicting the phonon TBC across interfaces. △ Less

Submitted 25 October, 2017; originally announced October 2017.

Comments: 7 pages, 3 figures

Small-mass atomic defects enhance vibrational thermal transport at disordered interfaces with ultrahigh thermal boundary conductance

Authors: Ashutosh Giri, Sean W. King, William A. Lanford, Antonio R. Mei, Devin Merril, Liza Ross, Ron Oviedo, John Richards, David H. Olson, Jeffrey L. Braun, John T. Gaskins, Freddy DeAngelis, Asegun Henry, Patrick E. Hopkins

Abstract: The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational works have suggested that interfacial defects can enhance this thermal boundary conductance through emergence of unique vibrations that are intrinsic to the materia… ▽ More The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational works have suggested that interfacial defects can enhance this thermal boundary conductance through emergence of unique vibrations that are intrinsic to the material interface and defect atoms,$^{2-6}$ a finding that contradicts traditional theory and conventional understanding. By manipulating the local heat flux of atomic vibrations that comprise these interfacial modes, in principle, the TBC can be increased. In this work, we provide evidence that interfacial defects can enhance the TBC across interfaces through the emergence of unique high frequency vibrational modes that arise from atomic mass defects at the interface with relatively small masses. We demonstrate ultrahigh TBC at amorphous SiOC:H/SiC:H interfaces, approaching 1 GW m$^{-2}$ K$^{-1}$, that is further increased through the introduction of nitrogen defects. The fact that disordered interfaces can exhibit such high conductances, which can be further increased with additional defects offers a unique direction in controlling interfacial thermal transport that becomes important in manipulating heat transfer across materials with high densities of interfaces. △ Less

Submitted 25 October, 2017; originally announced October 2017.

Ballistic transport of long wavelength phonons and thermal conductivity accumulation in nanograined silicon-germanium alloys

Authors: Long Chen, Jeffrey L. Braun, Brian F. Donovan, Patrick E. Hopkins, S. Joseph Poon

Abstract: Computationally efficient modeling of the thermal conductivity of materials is crucial to thorough experimental planning and theoretical understanding of thermal properties. We present a modeling approach in this work that utilizes frequency-dependent effective medium to calculate lattice thermal conductivity of nanostructured solids. The method accurately predicts a significant reduction in the t… ▽ More Computationally efficient modeling of the thermal conductivity of materials is crucial to thorough experimental planning and theoretical understanding of thermal properties. We present a modeling approach in this work that utilizes frequency-dependent effective medium to calculate lattice thermal conductivity of nanostructured solids. The method accurately predicts a significant reduction in the thermal conductivity of nanostructured Si80Ge20 systems, along with previous reported thermal conductivities in nanowires and nanoparticles-in-matrix materials. We use our model to gain insight into the role of long wavelength phonons on the thermal conductivity of nanograined silicon-germanium alloys. Through thermal conductivity accumulation calculations with our modified effective medium model, we show that phonons with wavelengths much greater than the average grain size will not be impacted by grain boundary scattering, counter to the traditionally assumed notion that grain boundaries in solids will act as diffusive interfaces that will limit long wavelength phonon transport. This is further supported through a modulation frequency dependent thermal conductivity as measured with time-domain thermoreflectance. △ Less

Submitted 25 September, 2017; originally announced September 2017.

Comments: Accepted for publication in Applied Physics Letters

Journal ref: Appl. Phys. Lett 111, 131902 (2017)

Steady-State Thermal Analysis of an Integrated 160 GHz Balanced Quadrupler Based on Quasi-Vertical Schottky Diodes

Authors: Souheil Nadri, Linli Xie, Naser Alijabbari, John T. Gaskins, Brian M. Foley, Patrick E. Hopkins, Robert M. Weikle II

Abstract: This work reports on a steady-state thermal analysis of a 160 GHz balanced quadrupler, based on a quasi-vertical varactor Schottky diode process, for high power applications. The chip is analyzed by solving the heat equation via the 3D finite element method. Time-Domain Thermoreflectance (TDTR) was used to measure the thermal conductivity of the different materials used in the model. A maximum ano… ▽ More This work reports on a steady-state thermal analysis of a 160 GHz balanced quadrupler, based on a quasi-vertical varactor Schottky diode process, for high power applications. The chip is analyzed by solving the heat equation via the 3D finite element method. Time-Domain Thermoreflectance (TDTR) was used to measure the thermal conductivity of the different materials used in the model. A maximum anode temperature of 64.9 C was found from the simulation. The addition of an extra beam lead connected to the block, for heat sinking, was found to reduce this maximum temperature to 41.0 C. △ Less

Submitted 8 December, 2015; originally announced December 2015.

Comments: 2 pages, 3 figures, 2 tables. in Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on

Role of crystal structure and junction morphology on interface thermal conductance

Authors: Carlos A. Polanco, Rouzbeh Rastgarkafshgarkolaei, **gjie Zhang, Nam Q. Le, Pamela M. Norris, Patrick E. Hopkins, Avik W. Ghosh

Abstract: We argue that the relative thermal conductance between interfaces with different morphologies is controlled by crystal structure through $M_{min}/M_c > 1$, the ratio between the {\it minimum mode} count on either side $M_{min}$, and the {\it conserving modes} $M_c$ that preserve phonon momentum transverse to the interface. Junctions with an added homogenous layer, "uniform", and "abrupt" junctions… ▽ More We argue that the relative thermal conductance between interfaces with different morphologies is controlled by crystal structure through $M_{min}/M_c > 1$, the ratio between the {\it minimum mode} count on either side $M_{min}$, and the {\it conserving modes} $M_c$ that preserve phonon momentum transverse to the interface. Junctions with an added homogenous layer, "uniform", and "abrupt" junctions are limited to $M_c$ while junctions with interfacial disorder, "mixed", exploit the expansion of mode spectrum to $M_{min}$. In our studies with cubic crystals, the largest enhancement of conductance from "abrupt" to "mixed" interfaces seems to be correlated with the emergence of voids in the conserving modes, where $M_c = 0$. Such voids typically arise when the interlayer coupling is weakly dispersive, making the bands shift rigidly with momentum. Interfacial mixing also increases alloy scattering, which reduces conductance in opposition with the mode spectrum expansion. Thus the conductance across a "mixed' junction does not always increase relative to that at a "uniform" interface. △ Less

Submitted 15 July, 2015; originally announced July 2015.

Comments: 25 pages, 8 figures

Impedance Matching of Atomic Thermal Interfaces Using Primitive Block Decomposition

Authors: Carlos A. Polanco, Christopher B. Saltonstall, Pamela M. Norris, Patrick E. Hopkins, Avik W. Ghosh

Abstract: We explore the physics of thermal impedance matching at the interface between two dissimilar materials by controlling the properties of a single atomic mass or bond. The maximum thermal current is transmitted between the materials when we are able to decompose the entire heterostructure solely in terms of primitive building blocks of the individual materials. Using this approach, we show that the… ▽ More We explore the physics of thermal impedance matching at the interface between two dissimilar materials by controlling the properties of a single atomic mass or bond. The maximum thermal current is transmitted between the materials when we are able to decompose the entire heterostructure solely in terms of primitive building blocks of the individual materials. Using this approach, we show that the minimum interfacial thermal resistance arises when the interfacial atomic mass is the arithmetic mean, while the interfacial spring constant is the harmonic mean of its neighbors. The contact induced broadening matrix for the local vibronic spectrum, obtained from the self-energy matrices, generalizes the concept of acoustic impedance to the nonlinear phonon dispersion or the short-wavelength (atomic) limit. △ Less

Submitted 20 May, 2015; originally announced May 2015.

Comments: 19 pages, 10 figures

Journal ref: Nanoscale and Microscale Thermophysical Engineering, 2013, 17, 263-279