-
Spin echo from erbium implanted silicon
Authors:
Mark A. Hughes,
Naitik A. Panjwani,
Matias Urdampilleta,
Kevin P. Homewood,
Ben Murdin,
J. David Carey
Abstract:
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the electron spin coherence time, T2, and the spin-lattice relaxation time, T1, were measured to be 7.5 ls and ~1 ms, respectively, at 5 K. The spin echo decay profil…
▽ More
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the electron spin coherence time, T2, and the spin-lattice relaxation time, T1, were measured to be 7.5 ls and ~1 ms, respectively, at 5 K. The spin echo decay profile displayed strong modulation, which was consistent with the super-hyperfine interaction between Er3þ and a spin bath of 29Si nuclei. The calculated spectral diffusion time was similar to the measured T2, which indicated that T2 was limited by spectral diffusion due to T1-induced flips of neighboring Er3þ spins. The origin of the echo is an Er center surrounded by six O atoms with monoclinic C1h site symmetry.
△ Less
Submitted 12 October, 2021;
originally announced October 2021.
-
Erbium implanted silicon for solid-state quantum technologies
Authors:
Mark A. Hughes,
Naitik A. Panjwani,
Matias Urdampilleta,
Nafsika Theodoropoulou,
Ilana Wisby,
Kevin P. Homewood,
Ben Murdin,
Tobias Lindström,
J. David Carey
Abstract:
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is measured to be ~10 μs at 5 K and the spin echo decay profile displays strong modulation due to super-hyperfine interaction with 29Si nuclei. Three independent measur…
▽ More
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is measured to be ~10 μs at 5 K and the spin echo decay profile displays strong modulation due to super-hyperfine interaction with 29Si nuclei. Three independent measurements: temperature quenching of photoluminescence (PL), PL lifetime and photo-illuminated electron spin resonance (ESR) all indicate the presence of a previously unreported Er related defect state which can facilitate non-radiative relaxation from the Er exited state. This gives an energy level scheme analogous to that of the diamond NV centre, and implies that optical spin polarisation of the Zeeman ground state and high temperature operation of Er qubits in Er implanted Si may be feasible. The collective coupling strength between a superconducting NbN lumped-element microresonator and Er implanted Si with an Er concentration of 1017 cm-3 at 20 mK was ~ 1 MHz.
△ Less
Submitted 27 August, 2020; v1 submitted 30 May, 2020;
originally announced June 2020.
-
n-Type Chalcogenides by Ion Implantation
Authors:
Mark A. Hughes,
Yanina Fedorenko,
Behrad Gholipour,
** Yao,
Tae-Hoon Lee,
Russell M. Gwilliam,
Kevin P. Homewood,
Steven Hinder,
Daniel W. Hewak,
Stephen R. Elliott,
Richard J. Curry
Abstract:
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoe…
▽ More
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb do** concentrations (5 to 11 at.%) incorporated during high-temperature glass melting. Here we report the first n-type do** of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical do** effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.
△ Less
Submitted 20 November, 2014;
originally announced November 2014.
