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Deep Learning of Structural Morphology Imaged by Scanning X-ray Diffraction Microscopy
Authors:
Aileen Luo,
Tao Zhou,
Martin V. Holt,
Andrej Singer,
Mathew J. Cherukara
Abstract:
Scanning X-ray nanodiffraction microscopy is a powerful technique for spatially resolving nanoscale structural morphologies by diffraction contrast. One of the critical challenges in experimental nanodiffraction data analysis is posed by the convergence angle of nanoscale focusing optics which creates simultaneous dependency of the far-field scattering data on three independent components of the l…
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Scanning X-ray nanodiffraction microscopy is a powerful technique for spatially resolving nanoscale structural morphologies by diffraction contrast. One of the critical challenges in experimental nanodiffraction data analysis is posed by the convergence angle of nanoscale focusing optics which creates simultaneous dependency of the far-field scattering data on three independent components of the local strain tensor - corresponding to dilation and two potential rigid body rotations of the unit cell. All three components are in principle resolvable through a spatially mapped sample tilt series however traditional data analysis is computationally expensive and prone to artifacts. In this study, we implement NanobeamNN, a convolutional neural network specifically tailored to the analysis of scanning probe X-ray microscopy data. NanobeamNN learns lattice strain and rotation angles from simulated diffraction of a focused X-ray nanobeam by an epitaxial thin film and can directly make reasonable predictions on experimental data without the need for additional fine-tuning. We demonstrate that this approach represents a significant advancement in computational speed over conventional methods, as well as a potential improvement in accuracy over the current standard.
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Submitted 24 June, 2024; v1 submitted 11 June, 2024;
originally announced June 2024.
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High-resolution spatio-temporal strain imaging reveals loss mechanisms in a surface acoustic wave device
Authors:
Tao Zhou,
Alexandre Reinhardt,
Marie Bousquet,
Joel Eymery,
Steven Leake,
Martin V. Holt,
Paul G. Evans,
Tobias Schülli
Abstract:
Surface acoustic wave devices are key components for processing radio frequency signals in wireless communication because these devices offer simultaneously high performance, compact size and low cost. The optimization of the device structure requires a quantitative understanding of energy conversion and loss mechanisms. Stroboscopic full-field diffraction x-ray microscopy studies of a prototypica…
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Surface acoustic wave devices are key components for processing radio frequency signals in wireless communication because these devices offer simultaneously high performance, compact size and low cost. The optimization of the device structure requires a quantitative understanding of energy conversion and loss mechanisms. Stroboscopic full-field diffraction x-ray microscopy studies of a prototypical one-port resonator device revealed the existence of unanticipated acoustic loss. A non-uniform acoustic excitation in the active area was responsible for the substantial end and side leakages observed at the design frequency. Quantitative analysis of the strain amplitude using a wave decomposition method allowed the determination of several key device parameters. This high-resolution spatiotemporal strain imaging technique is, more generally, suited for studying nanophononics, specifically when the feature size is smaller than optical wavelengths. The strain sensitivity allows precise measurement of acoustic waves with picometer-scale amplitude.
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Submitted 20 April, 2024;
originally announced May 2024.
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X-ray Nano-imaging of a Heterogeneous Structural Phase Transition in V2O3
Authors:
Ziming Shao,
Aileen Luo,
Eti Barazani,
Tao Zhou,
Zhonghou Cai,
Martin V. Holt,
Yoav Kalcheim,
Andrej Singer
Abstract:
Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries and extrinsic defects, posing significant challenges to fully understanding the impact of local microscopic distortions on the local Mott transition. Addressing…
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Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries and extrinsic defects, posing significant challenges to fully understanding the impact of local microscopic distortions on the local Mott transition. Addressing these challenges demands structural characterizations at the relevant length scale. Here, using a synchrotron-based scanning X-ray nanoprobe, we studied the real-space structural heterogeneity during the structural phase transition in a V2O3 thin film. Through temperature-dependent metal-insulator phase coexistence map**, we report a variation in the local transition temperature of up to 7 K across the film and the presence of the transition hysteresis at the nanoscale. Furthermore, a detailed quantitative analysis demonstrates that the spatial heterogeneity of the transition is closely tied to the tilting of crystallographic planes in the pure insulating phase. Our work highlights the impact of local heterogeneity on the Mott transition and lays the groundwork for future innovations in harnessing strain heterogeneity within Mott systems for the next-generation computational technologies.
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Submitted 30 June, 2024; v1 submitted 15 March, 2024;
originally announced March 2024.
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Stroboscopic X-ray Diffraction Microscopy of Dynamic Strain in Diamond Thin-film Bulk Acoustic Resonators for Quantum Control of Nitrogen Vacancy Centers
Authors:
Anthony D'Addario,
Johnathan Kuan,
Noah F. Opondo,
Ozan Erturk,
Tao Zhou,
Sunil A. Bhave,
Martin V. Holt,
Gregory D. Fuchs
Abstract:
Bulk-mode acoustic waves in a crystalline material exert lattice strain through the thickness of the sample, which couples to the spin Hamiltonian of defect-based qubits such as the nitrogen-vacancy (NV) center defect in diamond. This mechanism has been previously harnessed for unconventional quantum spin control, spin decoherence protection, and quantum sensing. Bulk-mode acoustic wave devices ar…
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Bulk-mode acoustic waves in a crystalline material exert lattice strain through the thickness of the sample, which couples to the spin Hamiltonian of defect-based qubits such as the nitrogen-vacancy (NV) center defect in diamond. This mechanism has been previously harnessed for unconventional quantum spin control, spin decoherence protection, and quantum sensing. Bulk-mode acoustic wave devices are also important in the microelectronics industry as microwave filters. A key challenge in both applications is a lack of appropriate operando microscopy tools for quantifying and visualizing gigahertz-frequency dynamic strain. In this work, we directly image acoustic strain within NV center-coupled diamond thin-film bulk acoustic wave resonators using stroboscopic scanning hard X-ray diffraction microscopy at the Advanced Photon Source. The far-field scattering patterns of the nano-focused X-ray diffraction encode strain information entirely through the illuminated thickness of the resonator. These patterns have a real-space spatial variation that is consistent with the bulk strain's expected modal distribution and a momentum-space angular variation from which the strain amplitude can be quantitatively deduced. We also perform optical measurements of strain-driven Rabi precession of the NV center spin ensemble, providing an additional quantitative measurement of the strain amplitude. As a result, we directly measure the NV spin-stress coupling parameter $b = 2.73(2)$ MHz/GPa by correlating these measurements at the same spatial position and applied microwave power. Our results demonstrate a unique technique for directly imaging AC lattice strain in micromechanical structures and provide a direct measurement of a fundamental constant for the NV center defect spin Hamiltonian.
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Submitted 11 December, 2023;
originally announced December 2023.
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Spontaneous supercrystal formation during a strain-engineered metal-insulator transition
Authors:
O. Yu. Gorobtsov,
L. Miao,
Z. Shao,
Y. Tan,
N. I. Schnitzer,
B. H. Goodge,
J. Ruf,
D. Weinstock,
M. Cherukara,
M. V. Holt,
H. Nair,
L. -Q. Chen,
L. F. Kourkoutis,
D. G. Schlom,
K. M. Shen,
A. Singer
Abstract:
Mott metal-insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next generation energy-efficient electronics. We report a previously unknown, hierarchically ordered state during a Mott transition and demonstrate correlated switching of functional electronic properties. We elucidate in-situ formation of an intrinsic supercrystal in a Ca2RuO4 thin film. Mac…
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Mott metal-insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next generation energy-efficient electronics. We report a previously unknown, hierarchically ordered state during a Mott transition and demonstrate correlated switching of functional electronic properties. We elucidate in-situ formation of an intrinsic supercrystal in a Ca2RuO4 thin film. Machine learning-assisted X-ray nanodiffraction together with electron microscopy reveal multi-scale periodic domain formation at and below the film transition temperature (TFilm ~ 200-250 K) and a separate anisotropic spatial structure at and above TFilm. Local resistivity measurements imply an intrinsic coupling of the supercrystal orientation to the material's anisotropic conductivity. Our findings add an additional degree of complexity to the physical understanding of Mott transitions, opening opportunities for designing materials with tunable electronic properties.
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Submitted 20 November, 2023;
originally announced November 2023.
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Quasi-deterministic Localization of Er Emitters in Thin Film TiO$_2$ through Submicron-scale Crystalline Phase Control
Authors:
Sean E. Sullivan,
Jonghoon Ahn,
Tao Zhou,
Preetha Saha,
Martin V. Holt,
Supratik Guha,
F. J. Heremans,
Manish Kumar Singh
Abstract:
With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er$^{3+}$) uniquely has an optical transition in the telecom C-band, ideal for transmiss…
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With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er$^{3+}$) uniquely has an optical transition in the telecom C-band, ideal for transmission over optical fibers, and making it well-suited for applications in quantum communication. The deployment of Er$^{3+}$ emitters into a thin film TiO$_2$ platform has been a promising step towards scalable integration; however, like many solid-state systems, the deterministic spatial placement of quantum emitters remains an open challenge. We investigate laser annealing as a means to locally tune the optical resonance of Er$^{3+}$ emitters in TiO$_2$ thin films on Si. Using both nanoscale X-ray diffraction measurements and cryogenic photoluminescence spectroscopy, we show that tightly focused below-gap laser annealing can induce anatase to rutile phase transitions in a nearly diffraction-limited area of the films and improve local crystallinity through grain growth. As a percentage of the Er:TiO$_2$ is converted to rutile, the Er$^{3+}$ optical transition blueshifts by 13 nm. We explore the effects of changing laser annealing time and show that the amount of optically active Er:rutile increases linearly with laser power. We additionally demonstrate local phase conversion on microfabricated Si structures, which holds significance for quantum photonics.
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Submitted 28 August, 2023;
originally announced August 2023.
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Heterogeneous field response of hierarchical polar laminates in relaxor ferroelectrics
Authors:
Hao Zheng,
Tao Zhou,
Dina Sheyfer,
Jieun Kim,
Jiyeob Kim,
Travis D. Frazer,
Zhonghou Cai,
Martin V. Holt,
Zhan Zhang,
J. F. Mitchell,
Lane W. Martin,
Yue Cao
Abstract:
Relaxor ferroelectrics are a class of materials that are widely perceived as deriving their exotic properties from structural heterogeneities. Understanding the microscopic origin of the superior electromechanical response requires knowledge not only concerning the formation of polar nanodomains (PNDs) built from individual atoms but more importantly the spatial distribution of PNDs over longer di…
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Relaxor ferroelectrics are a class of materials that are widely perceived as deriving their exotic properties from structural heterogeneities. Understanding the microscopic origin of the superior electromechanical response requires knowledge not only concerning the formation of polar nanodomains (PNDs) built from individual atoms but more importantly the spatial distribution of PNDs over longer distances. The mesoscale PND arrangement is shaped by the interactions between these domains and, in turn, dictates the electric-field driven PND response directly relevant to the macroscopic material properties. Here, we show the emergence of mesoscale lattice order that we name "polar laminates" in the canonical relaxor ferroelectric 0.68PbMg$_{1/3}$Nb$_{2/3}$O$_{3}$-0.32PbTiO$_{3}$ (PMN-0.32PT) using X-ray coherent nano-diffraction. These laminates are nematic with a size of ~350 nm and arise from the staggered arrangement of ~13 nm monoclinic PNDs along the <110> of the pseudocubic lattice. The spatial distribution of c-axis strain is directly correlated with the tilting of the PNDs and is most prominent between the laminates. Further operando nano-diffraction studies demonstrate heterogeneous electric-field-driven responses. The most active regions tend to reside inside the laminates while the spatial pinning centers are between the laminates. This observation reveals the hierarchical assembly of lattice order as a novel form of electron and lattice self-organization in heterogenous materials and establishes the role of such mesoscale spatial arrangement in connecting the nanoscale heterogeneity and macroscopic material properties. These findings provide a guiding principle for the design and optimization of future relaxors and may shed light on the existence of similar behavior in a wide range of quantum and functional materials.
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Submitted 30 June, 2023;
originally announced July 2023.
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Deep learning at the edge enables real-time streaming ptychographic imaging
Authors:
Anakha V Babu,
Tao Zhou,
Saugat Kandel,
Tekin Bicer,
Zhengchun Liu,
William Judge,
Daniel J. Ching,
Yi Jiang,
Sinisa Veseli,
Steven Henke,
Ryan Chard,
Yudong Yao,
Ekaterina Sirazitdinova,
Geetika Gupta,
Martin V. Holt,
Ian T. Foster,
Antonino Miceli,
Mathew J. Cherukara
Abstract:
Coherent microscopy techniques provide an unparalleled multi-scale view of materials across scientific and technological fields, from structural materials to quantum devices, from integrated circuits to biological cells. Driven by the construction of brighter sources and high-rate detectors, coherent X-ray microscopy methods like ptychography are poised to revolutionize nanoscale materials charact…
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Coherent microscopy techniques provide an unparalleled multi-scale view of materials across scientific and technological fields, from structural materials to quantum devices, from integrated circuits to biological cells. Driven by the construction of brighter sources and high-rate detectors, coherent X-ray microscopy methods like ptychography are poised to revolutionize nanoscale materials characterization. However, associated significant increases in data and compute needs mean that conventional approaches no longer suffice for recovering sample images in real-time from high-speed coherent imaging experiments. Here, we demonstrate a workflow that leverages artificial intelligence at the edge and high-performance computing to enable real-time inversion on X-ray ptychography data streamed directly from a detector at up to 2 kHz. The proposed AI-enabled workflow eliminates the sampling constraints imposed by traditional ptychography, allowing low dose imaging using orders of magnitude less data than required by traditional methods.
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Submitted 19 September, 2022;
originally announced September 2022.
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X-ray Nano-imaging of Defects in Thin Film Catalysts via Cluster Analysis
Authors:
Aileen Luo,
Oleg Yu. Gorobtsov,
Jocienne N. Nelson,
Ding-Yuan Kuo,
Ziming Shao,
Ryan Bouck,
Mathew Cherukara,
Martin V. Holt,
Kyle M. Shen,
Darrell G. Schlom,
** Suntivich,
Andrej Singer
Abstract:
Functional properties of transition-metal oxides strongly depend on crystallographic defects. In transition-metal-oxide electrocatalysts such as SrIrO3 (SIO), crystallographic lattice deviations can affect ionic diffusion and adsorbate binding energies. Scanning x-ray nanodiffraction enables imaging of local structural distortions across an extended spatial region of thin samples. Line defects rem…
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Functional properties of transition-metal oxides strongly depend on crystallographic defects. In transition-metal-oxide electrocatalysts such as SrIrO3 (SIO), crystallographic lattice deviations can affect ionic diffusion and adsorbate binding energies. Scanning x-ray nanodiffraction enables imaging of local structural distortions across an extended spatial region of thin samples. Line defects remain challenging to detect and localize using nanodiffraction, due to their weak diffuse scattering. Here we apply an unsupervised machine learning clustering algorithm to isolate the low-intensity diffuse scattering in as-grown and alkaline-treated thin epitaxially strained SIO films. We pinpoint the defect locations, find additional strain variation in the morphology of electrochemically cycled SIO, and interpret the defect type by analyzing the diffraction profile through clustering. Our findings demonstrate the use of a machine learning clustering algorithm for identifying and characterizing hard-to-find crystallographic defects in thin films of electrocatalysts and highlight the potential to study electrochemical reactions at defect sites in operando experiments.
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Submitted 9 January, 2023; v1 submitted 18 March, 2022;
originally announced March 2022.
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Directional Detection of Dark Matter Using Solid-State Quantum Sensing
Authors:
Reza Ebadi,
Mason C. Marshall,
David F. Phillips,
Johannes Cremer,
Tao Zhou,
Michael Titze,
Pauli Kehayias,
Maziar Saleh Ziabari,
Nazar Delegan,
Surjeet Rajendran,
Alexander O. Sushkov,
F. Joseph Heremans,
Edward S. Bielejec,
Martin V. Holt,
Ronald L. Walsworth
Abstract:
Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high…
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Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high-density target material. A detector of this type operates in a hybrid mode. The WIMP or neutrino-induced nuclear recoil is detected using real-time charge, phonon, or photon collection. The directional signal, however, is imprinted as a durable sub-micron damage track in the lattice structure. This directional signal can be read out by a variety of atomic physics techniques, from point defect quantum sensing to x-ray microscopy. In this white paper, we present the detector principle and review the status of the experimental techniques required for directional readout of nuclear recoil tracks. Specifically, we focus on diamond as a target material; it is both a leading platform for emerging quantum technologies and a promising component of next-generation semiconductor electronics. Based on the development and demonstration of directional readout in diamond over the next decade, a future WIMP detector will leverage or motivate advances in multiple disciplines towards precision dark matter and neutrino physics.
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Submitted 14 June, 2023; v1 submitted 11 March, 2022;
originally announced March 2022.
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Proton distribution visualization in perovskite nickelate devices utilizing nanofocused X-rays
Authors:
Ivan A. Zaluzhnyy,
Peter O. Sprau,
Richard Tran,
Qi Wang,
Hai-Tian Zhang,
Zhen Zhang,
Tae Joon Park,
Nelson Hua,
Boyan Stoychev,
Mathew J. Cherukara,
Martin V. Holt,
Evgeny Nazarertski,
Xiao**g Huang,
Hanfei Yan,
Ajith Pattammattel,
Yong S. Chu,
Shyue ** Ong,
Shriram Ramanathan,
Oleg G. Shpyrko,
Alex Frano
Abstract:
We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO$_3$-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory (DFT) simulations show partial reduction of nickel valence in the region with high proton concentration, which leads to the insulating behavior. Concurrently, x-ray diffraction reveals only a small latti…
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We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO$_3$-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory (DFT) simulations show partial reduction of nickel valence in the region with high proton concentration, which leads to the insulating behavior. Concurrently, x-ray diffraction reveals only a small lattice distortion in the doped regions. Together, our results directly show that the knob which proton do** modifies is the electronic valency, and not the crystal lattice. The studies are relevant to on-going efforts to disentangle structural and electronic effects across metal-insulator phase transitions in correlated oxides.
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Submitted 13 August, 2021;
originally announced August 2021.
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Scanning X-ray Diffraction Microscopy for Diamond Quantum Sensing
Authors:
Mason C. Marshall,
David F. Phillips,
Matthew J. Turner,
Mark J. H. Ku,
Tao Zhou,
Nazar Delegan,
F. Joseph Heremans,
Martin V. Holt,
Ronald L. Walsworth
Abstract:
Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based quantum sensing and information applications -- as well as for future dark matter detectors where directional information of incoming particles is encoded in crystal…
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Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based quantum sensing and information applications -- as well as for future dark matter detectors where directional information of incoming particles is encoded in crystal strain. Here, we exploit nanofocused scanning X-ray diffraction microscopy to quantitatively measure crystal deformation from defects in diamond with high spatial and strain resolution. Combining information from multiple Bragg angles allows stereoscopic three-dimensional modeling of strain feature geometry; the diffraction results are validated via comparison to optical measurements of the strain tensor based on spin-state-dependent spectroscopy of ensembles of nitrogen vacancy (NV) centers in the diamond. Our results demonstrate both strain and spatial resolution sufficient for directional detection of dark matter via X-ray measurement of crystal strain, and provide a promising tool for diamond growth analysis and improvement of defect-based sensing.
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Submitted 14 October, 2022; v1 submitted 15 March, 2021;
originally announced March 2021.
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Real-time sparse-sampled Ptychographic imaging through deep neural networks
Authors:
Mathew J. Cherukara,
Tao Zhou,
Youssef Nashed,
Pablo Enfedaque,
Alex Hexemer,
Ross J. Harder,
Martin V. Holt
Abstract:
Ptychography has rapidly grown in the fields of X-ray and electron imaging for its unprecedented ability to achieve nano or atomic scale resolution while simultaneously retrieving chemical or magnetic information from a sample. A ptychographic reconstruction is achieved by means of solving a complex inverse problem that imposes constraints both on the acquisition and on the analysis of the data, w…
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Ptychography has rapidly grown in the fields of X-ray and electron imaging for its unprecedented ability to achieve nano or atomic scale resolution while simultaneously retrieving chemical or magnetic information from a sample. A ptychographic reconstruction is achieved by means of solving a complex inverse problem that imposes constraints both on the acquisition and on the analysis of the data, which typically precludes real-time imaging due to computational cost involved in solving this inverse problem. In this work we propose PtychoNN, a novel approach to solve the ptychography reconstruction problem based on deep convolutional neural networks. We demonstrate how the proposed method can be used to predict real-space structure and phase at each scan point solely from the corresponding far-field diffraction data. The presented results demonstrate how PtychoNN can effectively be used on experimental data, being able to generate high quality reconstructions of a sample up to hundreds of times faster than state-of-the-art ptychography reconstruction solutions once trained. By surpassing the typical constraints of iterative model-based methods, we can significantly relax the data acquisition sampling conditions and produce equally satisfactory reconstructions. Besides drastically accelerating acquisition and analysis, this capability can enable new imaging scenarios that were not possible before, in cases of dose sensitive, dynamic and extremely voluminous samples.
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Submitted 15 April, 2020;
originally announced April 2020.
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Dynamical Scattering in Coherent Hard X-Ray Nanobeam Bragg Diffraction
Authors:
A. Pateras,
J. Park,
Y. Ahn,
J. A. Tilka,
M. V. Holt,
H. Kim,
L. J. Mawst,
P. G. Evans
Abstract:
Unique intensity features arising from dynamical diffraction arise in coherent x-ray nanobeam diffraction patterns of crystals having thicknesses larger than the x-ray extinction depth or exhibiting combinations of nanoscale and mesoscale features. We demonstrate that dynamical scattering effects can be accurately predicted using an optical model combined with the Darwin theory of dynamical x-ray…
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Unique intensity features arising from dynamical diffraction arise in coherent x-ray nanobeam diffraction patterns of crystals having thicknesses larger than the x-ray extinction depth or exhibiting combinations of nanoscale and mesoscale features. We demonstrate that dynamical scattering effects can be accurately predicted using an optical model combined with the Darwin theory of dynamical x-ray diffraction. The model includes the highly divergent coherent x-ray nanobeams produced by Fresnel zone plate focusing optics and accounts for primary extinction, multiple scattering, and absorption. The simulation accurately reproduces the dynamical scattering features of experimental diffraction patterns acquired from a GaAs/AlGaAs epitaxial heterostructure on a GaAs (001) substrate.
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Submitted 25 February, 2020;
originally announced February 2020.
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Three-dimensional phonon population anisotropy in silicon nanomembranes
Authors:
Kyle M. McElhinny,
Gokul Gopalakrishnan,
Martin V. Holt,
David A. Czaplewski,
Paul G. Evans
Abstract:
Nanoscale single-crystals possess modified phonon dispersions due to the truncation of the crystal. The introduction of surfaces alters the population of phonons relative to the bulk and introduces anisotropy arising from the breaking of translational symmetry. Such modifications exist throughout the Brillouin zone, even in structures with dimensions of several nanometers, posing a challenge to th…
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Nanoscale single-crystals possess modified phonon dispersions due to the truncation of the crystal. The introduction of surfaces alters the population of phonons relative to the bulk and introduces anisotropy arising from the breaking of translational symmetry. Such modifications exist throughout the Brillouin zone, even in structures with dimensions of several nanometers, posing a challenge to the characterization of vibrational properties and leading to uncertainty in predicting the thermal, optical, and electronic properties of nanomaterials. Synchrotron x-ray thermal diffuse scattering studies find that freestanding Si nanomembranes with thicknesses as large as 21 nm exhibit a higher scattering intensity per unit thickness than bulk silicon. In addition, the anisotropy arising from the finite thickness of these membranes produces particularly intense scattering along reciprocal-space directions normal to the membrane surface compared to corresponding in-plane directions. These results reveal the dimensions at which calculations of materials properties and device characteristics based on bulk phonon dispersions require consideration of the nanoscale size of the crystal.
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Submitted 25 February, 2020;
originally announced February 2020.
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Domain alignment within ferroelectric/dielectric PbTiO$_3$/SrTiO$_3$ superlattice nanostructures
Authors:
J. Park,
J. Mangeri,
Q. Zhang,
M. H. Yusuf,
A. Pateras,
M. Dawber,
M. V. Holt,
O. G. Heinonen,
S. Nakhmanson,
P. G. Evans
Abstract:
The ferroelectric domain pattern within lithographically defined PbTiO3/SrTiO3 ferroelectric/dielectric heteroepitaxial superlattice nanostructures is strongly influenced by the edges of the structures. Synchrotron x-ray nanobeam diffraction reveals that the spontaneously formed 180° ferroelectric stripe domains exhibited by such superlattices adopt a configuration in rectangular nanostructures in…
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The ferroelectric domain pattern within lithographically defined PbTiO3/SrTiO3 ferroelectric/dielectric heteroepitaxial superlattice nanostructures is strongly influenced by the edges of the structures. Synchrotron x-ray nanobeam diffraction reveals that the spontaneously formed 180° ferroelectric stripe domains exhibited by such superlattices adopt a configuration in rectangular nanostructures in which domain walls are aligned with long patterned edges. The angular distribution of x-ray diffuse scattering intensity from nanodomains indicates that domains are aligned within an angular range of approximately 20° with respect to the edges. Computational studies based on a time-dependent Landau-Ginzburg-Devonshire model show that the preferred direction of the alignment results from lowering of the bulk and electrostrictive contributions to the free energy of the system due to the release of the lateral mechanical constraint. This unexpected alignment appears to be intrinsic and not a result of distortions or defects caused by the patterning process. Our work demonstrates how nanostructuring and patterning of heteroepitaxial superlattices allow for pathways to create and control ferroelectric structures that may appear counterintuitive.
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Submitted 25 February, 2020;
originally announced February 2020.
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Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures
Authors:
Anastasios Pateras,
Joonkyu Park,
Youngjun Ahn,
Jack A. Tilka,
Martin V. Holt,
Christian Reichl,
Werner Wegscheider,
Timothy A. Baart,
Juan Pablo Dehollain,
Uditendu Mukhopadhyay,
Lieven M. K. Vandersypen,
Paul G. Evans
Abstract:
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic ele…
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Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.
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Submitted 25 February, 2020;
originally announced February 2020.
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Competing Phases in Epitaxial Vanadium Dioxide at Nanoscale
Authors:
Yogesh Sharma,
Martin V. Holt,
Nouamane Laanait,
Xiang Gao,
Ilia Ivanov,
Liam Collins,
Changhee Sohn,
Zhaoliang Liao,
Elizabeth Skoropata,
Sergei V. Kalinin,
Nina Balke,
Gyula Eres,
Thomas Z. Ward,
Ho Nyung Lee
Abstract:
Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary underg…
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Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary undergoes strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of the nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The phase states of the films are imaged by multi-length-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates a critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films.
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Submitted 13 August, 2019;
originally announced August 2019.
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Quantum well stabilized point defect spin qubits
Authors:
Ivády,
J. Davidsson,
N. Delegan,
A. L. Falk,
P. V. Klimov,
S. J. Whiteley,
S. O. Hruszkewycz,
M. V. Holt,
F. J. Heremans,
N. T. Son,
D. D. Awschalom,
I. A. Abrikosov,
A. Gali
Abstract:
Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engine…
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Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron x-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide (SiC) as a near-stacking fault axial divacancy and show how this model explains these defect's robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.
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Submitted 21 April, 2020; v1 submitted 28 May, 2019;
originally announced May 2019.
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Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells
Authors:
Jonas Lähnemann,
Megan O. Hill,
Jesús Herranz,
Oliver Marquardt,
Guanhui Gao,
Ali Al Hassan,
Arman Davtyan,
Stephan O. Hruszkewycz,
Martin V. Holt,
Chunyi Huang,
Irene Calvo-Almazán,
Uwe Jahn,
Ullrich Pietsch,
Lincoln J. Lauhon,
Lutz Geelhaar
Abstract:
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite pol…
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While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite polytypes. Cathodoluminescence hyperspectral imaging reveals a blueshift of the quantum well emission energy by $75\pm15$ meV in the wurtzite polytype segment. Nanoprobe x-ray diffraction and atom probe tomography enable $\mathbf{k}\cdot\mathbf{p}$ calculations for the specific sample geometry to reveal two comparable contributions to this shift. First, there is a 30% drop in In mole fraction going from the zincblende to the wurtzite segment. Second, the quantum well is under compressive strain, which has a much stronger impact on the hole ground state in the wurtzite than in the zincblende segment. Our results highlight the role of the crystal structure in tuning the emission of (In,Ga)As quantum wells and pave the way to exploit the possibilities of three-dimensional bandgap engineering in core-shell nanowire heterostructures. At the same time, we have demonstrated an advanced characterization toolkit for the investigation of semiconductor nanostructures.
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Submitted 8 August, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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Time-resolved x-ray microscopy for materials science
Authors:
Haidan Wen,
Mathew J. Cherukara,
Martin V. Holt
Abstract:
X-ray microscopy has been an indispensable tool to image nanoscale properties for materials research. One of its recent advances is to extend microscopic studies to the time domain for visualizing the dynamics of nanoscale phenomena. Large-scale x-ray facilities have been the powerhouse of time-resolved x-ray microscopy. Their upgrades including a significant reduction of the x-ray emittance at st…
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X-ray microscopy has been an indispensable tool to image nanoscale properties for materials research. One of its recent advances is to extend microscopic studies to the time domain for visualizing the dynamics of nanoscale phenomena. Large-scale x-ray facilities have been the powerhouse of time-resolved x-ray microscopy. Their upgrades including a significant reduction of the x-ray emittance at storage rings and fully coherent ultrashort x-ray pulses at free electron lasers, will lead to new developments in instrumentation and open new scientific opportunities for x-ray imaging of nanoscale dynamics with the simultaneous attainment of unprecedentedly high spatial and temporal resolutions. This review presents recent progress in and the outlook for time-resolved x-ray microscopy in the context of ultrafast nanoscale imaging and its applications to condensed matter physics and materials science.
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Submitted 9 November, 2018;
originally announced November 2018.
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Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy
Authors:
S. J. Whiteley,
F. J. Heremans,
G. Wolfowicz,
D. D. Awschalom,
M. V. Holt
Abstract:
Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for real-space imaging of dynamic strain used in correlation with microscopic photoluminescence measure…
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Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for real-space imaging of dynamic strain used in correlation with microscopic photoluminescence measurements. We demonstrate this technique in 4H-SiC, which hosts long-lifetime room temperature vacancy spin defects. Using nano-focused X-ray photon pulses synchronized to a surface acoustic wave launcher, we achieve an effective time resolution of 100 ps at a 25 nm spatial resolution to map micro-radian dynamic lattice curvatures. The acoustically induced lattice distortions near an engineered scattering structure are correlated with enhanced photoluminescence responses of optically-active SiC quantum defects driven by local piezoelectric effects. These results demonstrate a unique route for directly imaging local strain in nanomechanical structures and quantifying dynamic structure-function relationships in materials under realistic operating conditions.
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Submitted 29 July, 2019; v1 submitted 14 August, 2018;
originally announced August 2018.
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Probing spin-phonon interactions in silicon carbide with Gaussian acoustics
Authors:
Samuel J. Whiteley,
Gary Wolfowicz,
Christopher P. Anderson,
Alexandre Bourassa,
He Ma,
Meng Ye,
Gerwin Koolstra,
Kevin J. Satzinger,
Martin V. Holt,
F. Joseph Heremans,
Andrew N. Cleland,
David I. Schuster,
Giulia Galli,
David D. Awschalom
Abstract:
Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with lo…
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Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high quality factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized by a novel stroboscopic X-ray diffraction imaging technique, which delivers direct, strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, we provide a more complete picture of spin-strain coupling for various defects in SiC with C3v symmetry. This reveals the importance of shear for future device engineering and enhanced spin-mechanical coupling. We demonstrate all-optical detection of acoustic paramagnetic resonance without microwave magnetic fields, relevant to sensing applications. Finally, we show mechanically driven Autler-Townes splittings and magnetically forbidden Rabi oscillations. These results offer a basis for full strain control of three-level spin systems.
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Submitted 4 August, 2018; v1 submitted 29 April, 2018;
originally announced April 2018.
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High resolution three dimensional structural microscopy by single angle Bragg ptychography
Authors:
S. O. Hruszkewycz,
M. Allain,
M. V. Holt,
C. E. Murray,
J. R. Holt,
P. H. Fuoss,
V. Chamard
Abstract:
We present an efficient method of imaging 3D nanoscale lattice behavior and strain fields in crystalline materials with a new methodology -- three dimensional Bragg projection ptychography (3DBPP). In this method, the 2D sample structure information encoded in a coherent high-angle Bragg peak measured at a fixed angle is combined with the real-space scanning probe positions to reconstruct the 3D s…
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We present an efficient method of imaging 3D nanoscale lattice behavior and strain fields in crystalline materials with a new methodology -- three dimensional Bragg projection ptychography (3DBPP). In this method, the 2D sample structure information encoded in a coherent high-angle Bragg peak measured at a fixed angle is combined with the real-space scanning probe positions to reconstruct the 3D sample structure. This work introduces an entirely new means of three dimensional structural imaging of nanoscale materials and eliminates the experimental complexities associated with rotating nanoscale samples. We present the framework for the method and demonstrate our approach with a numerical demonstration, an analytical derivation, and an experimental reconstruction of lattice distortions in a component of a nanoelectronic prototype device.
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Submitted 3 June, 2015;
originally announced June 2015.
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Critical phenomena of nano phase evolution in a first order transition
Authors:
Yongseong Choi,
David J. Keavney,
Martin V. Holt,
Vojtěch Uhlíř,
Dario Arena,
Eric E. Fullerton,
Philip J. Ryan,
Jong-Woo Kim
Abstract:
First order phase transitions occur discretely from one state to another, however they often display continuous behavior. To understand this nature, it is essential to probe how the emergent phase nucleates, interacts and evolves with the initial phase across the transition at microscopic scales. Here, the prototypical first-order magneto-structural transition in FeRh is used to investigate these…
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First order phase transitions occur discretely from one state to another, however they often display continuous behavior. To understand this nature, it is essential to probe how the emergent phase nucleates, interacts and evolves with the initial phase across the transition at microscopic scales. Here, the prototypical first-order magneto-structural transition in FeRh is used to investigate these phenomena. We find that the temperature evolution of the final phase exhibits critical behavior. Furthermore, a difference between the structure and magnetic transition temperatures reveals a novel intermediate phase created from the interface between the initial and nucleated final states. This emergent phase, characterized by its lack of spin order due to the competition between the antiferromagnetic and ferromagnetic interactions, leads to suppression of the dynamic aspect of the transition, generating a static mixed-phase-morphology. Understanding and controlling the transition process at this spatial scale is critical to optimizing functional device capabilities.
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Submitted 16 May, 2014;
originally announced May 2014.
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Nanoscale imaging of the electronic and structural transitions in vanadium dioxide
Authors:
M. M. Qazilbash,
A. Tripathi,
A. A. Schafgans,
Bong-Jun Kim,
Hyun-Tak Kim,
Zhonghou Cai,
M. V. Holt,
J. M. Maser,
F. Keilmann,
O. G. Shpyrko,
D. N. Basov
Abstract:
We investigate the electronic and structural changes at the nanoscale in vanadium dioxide (VO2) in the vicinity of its thermally driven phase transition. Both electronic and structural changes exhibit phase coexistence leading to percolation. In addition, we observe a dichotomy between the local electronic and structural transitions. Nanoscale x-ray diffraction reveals local, non-monotonic switchi…
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We investigate the electronic and structural changes at the nanoscale in vanadium dioxide (VO2) in the vicinity of its thermally driven phase transition. Both electronic and structural changes exhibit phase coexistence leading to percolation. In addition, we observe a dichotomy between the local electronic and structural transitions. Nanoscale x-ray diffraction reveals local, non-monotonic switching of the lattice structure, a phenomenon that is not seen in the electronic insulator-to-metal transition mapped by near-field infrared microscopy.
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Submitted 12 September, 2011;
originally announced September 2011.
