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Robust and fast post-processing of single-shot spin qubit detection events with a neural network
Authors:
Tom Struck,
Javed Lindner,
Arne Hollmann,
Floyd Schauer,
Andreas Schmidbauer,
Dominique Bougeard,
Lars R. Schreiber
Abstract:
Establishing low-error and fast detection methods for qubit readout is crucial for efficient quantum error correction. Here, we test neural networks to classify a collection of single-shot spin detection events, which are the readout signal of our qubit measurements. This readout signal contains a stochastic peak, for which a Bayesian inference filter including Gaussian noise is theoretically opti…
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Establishing low-error and fast detection methods for qubit readout is crucial for efficient quantum error correction. Here, we test neural networks to classify a collection of single-shot spin detection events, which are the readout signal of our qubit measurements. This readout signal contains a stochastic peak, for which a Bayesian inference filter including Gaussian noise is theoretically optimal. Hence, we benchmark our neural networks trained by various strategies versus this latter algorithm. Training of the network with 10$^{6}$ experimentally recorded single-shot readout traces does not improve the post-processing performance. A network trained by synthetically generated measurement traces performs similar in terms of the detection error and the post-processing speed compared to the Bayesian inference filter. This neural network turns out to be more robust to fluctuations in the signal offset, length and delay as well as in the signal-to-noise ratio. Notably, we find an increase of 7 % in the visibility of the Rabi-oscillation when we employ a network trained by synthetic readout traces combined with measured signal noise of our setup. Our contribution thus represents an example of the beneficial role which software and hardware implementation of neural networks may play in scalable spin qubit processor architectures.
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Submitted 22 March, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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Low-frequency spin qubit detuning noise in highly purified $^{28}$Si/SiGe
Authors:
Tom Struck,
Arne Hollmann,
Floyd Schauer,
Olexiy Fedorets,
Andreas Schmidbauer,
Kentarou Sawano,
Helge Riemann,
Nikolay V. Abrosimov,
Łukasz Cywiński,
Dominique Bougeard,
Lars R. Schreiber
Abstract:
The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit detuning noise in a device with an embedded nanomagnet, a remaining $^{29}$Si concentration of only 60$\,$ppm in the strained $^{28}$Si quantum well layer and a spin e…
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The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit detuning noise in a device with an embedded nanomagnet, a remaining $^{29}$Si concentration of only 60$\,$ppm in the strained $^{28}$Si quantum well layer and a spin echo decay time $T_2^{\text{echo}}=128\,μ$s. The power spectral density (PSD) of the charge noise explains both the observed transition of a $1/f^2$- to a $1/f$-dependence of the detuning noise PSD as well as the observation of a decreasing time-ensemble spin dephasing time from $T_2^* \approx 20\,μ$s with increasing measurement time over several hours. Despite their strong hyperfine contact interaction, the few $^{73}$Ge nuclei overlap** with the quantum dot in the barrier do not limit $T_2^*$, as their dynamics is frozen on a few hours measurement scale. We conclude that charge noise and the design of the gradient magnetic field is the key to further improve the qubit fidelity.
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Submitted 25 September, 2019;
originally announced September 2019.
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Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si$_x$Ge$_{1-x}$ quantum dot
Authors:
Arne Hollmann,
Tom Struck,
Veit Langrock,
Andreas Schmidbauer,
Floyd Schauer,
Tim Leonhardt,
Kentarou Sawano,
Helge Riemann,
Nikolay V. Abrosimov,
Dominique Bougeard,
Lars R. Schreiber
Abstract:
Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown…
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Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown $^{28}$Si/SiGe. The valley splitting is monotonically and reproducibly tunable up to 15 % by gate voltages, originating from a 6 nm lateral displacement of the quantum dot. We observe static spin relaxation times $T_1>1$ s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, $T_1$ is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking.
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Submitted 30 March, 2020; v1 submitted 9 July, 2019;
originally announced July 2019.
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30 GHz-voltage controlled oscillator operating at 4 K
Authors:
Arne Hollmann,
Daniel Jirovec,
Maciej Kucharski,
Dietmar Kissinger,
Gunter Fischer,
Lars R. Schreiber
Abstract:
Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here,…
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Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here, we perform the first low temperature measurements of a 130 nm BiCMOS based SiGe voltage controlled oscillator. The device maintains its functionality from 300 K to 4 K. We determined the dependence of frequency and output power on temperature and magnetic field up to 5 T and measured the temperature influence on noise performance. While the output power tends to increase, the frequency shift is 3 % for temperature and 0.02 % for the field dependence, respectively, both relevant for highly coherent spin qubit applications. We observe no improvement on output noise, but increased output flickering.
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Submitted 25 April, 2018;
originally announced April 2018.
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A Family of Simulation Criteria to Guide DEVS Models Validation Rigorously, Systematically and Semi-Automatically
Authors:
Diego A. Hollmann,
Maximiliano Cristiá,
Claudia Frydman
Abstract:
The most common method to validate a DEVS model against the requirements is to simulate it several times under different conditions, with some simulation tool. The behavior of the model is compared with what the system is supposed to do. The number of different scenarios to simulate is usually infinite, therefore, selecting them becomes a crucial task. This selection, actually, is made following t…
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The most common method to validate a DEVS model against the requirements is to simulate it several times under different conditions, with some simulation tool. The behavior of the model is compared with what the system is supposed to do. The number of different scenarios to simulate is usually infinite, therefore, selecting them becomes a crucial task. This selection, actually, is made following the experience or intuition of an engineer. Here we present a family of criteria to conduct DEVS model simulations in a disciplined way and covering the most significant simulations to increase the confidence on the model. This is achieved by analyzing the mathematical representation of the DEVS model and, thus, part of the validation process can be automatized.
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Submitted 27 June, 2014; v1 submitted 26 June, 2014;
originally announced June 2014.
