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Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
Authors:
Maciej Jaworski,
Paweł Mrowiński,
Marek Burakowski,
Paweł Holewa,
Laura Zeidler,
Marcin Syperek,
Elizaveta Semenova,
Grzegorz Sęk
Abstract:
Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon…
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Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon leakage while directing photons into the collecting lens aperture. Here, we present an alternative approach to employ Xenon plasma-focused ion beam (Xe-PFIB) technology as a reliable method for the 3D sha** of photonic nanostructures containing low-density self-assembled InAs/InP quantum dots emitting in the C-band range of the 3rd telecommunication window. We explore both deterministic and non-deterministic fabrication approaches, resulting in mesas naturally shaped as truncated cones. As a demonstration, we fabricate mesas using a heterogeneously integrated structure with a QDs membrane atop an aluminum mirror and silicon substrate. Finite-difference time-domain (FDTD) simulations show that the angled sidewalls significantly increase photon extraction efficiency, achieving η = 0.89 for NA = 0.65. We demonstrate experimentally a high purity of pulsed single-photon emission (~99%) and a high extraction efficiency of η = 0.24, with the latter surpassing the highest reported values obtained using electron beam lithography in the C-band.
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Submitted 7 June, 2024;
originally announced June 2024.
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Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
Authors:
Marek Burakowski,
Paweł Holewa,
Aurimas Sakanas,
Anna Musiał,
Grzegorz Sęk,
Paweł Mrowiński,
Kresten Yvind,
Elizaveta Semenova,
Marcin Syperek
Abstract:
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate th…
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Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $μ$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.
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Submitted 23 November, 2023;
originally announced November 2023.
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On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices
Authors:
Daniel A. Vajner,
Paweł Holewa,
Emilia Zięba-Ostój,
Maja Wasiluk,
Martin von Helversen,
Aurimas Sakanas,
Alexander Huck,
Kresten Yvind,
Niels Gregersen,
Anna Musiał,
Marcin Syperek,
Elizaveta Semenova,
Tobias Heindel
Abstract:
Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550$\,$nm is ideal. The direct generation of QD-photons in this spectral range and with high quantum-optical quality, however, rem…
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Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550$\,$nm is ideal. The direct generation of QD-photons in this spectral range and with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of $4π$ and a high single-photon purity in terms of $g^{(2)}(0)=0.005(1)$ and $0.015(1)$ for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the $π$-pulse exceeding 80$\%$. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments we obtain a photon-indistinguishability of the full photon wave packet of up to $35(3)\%$, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.
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Submitted 16 January, 2024; v1 submitted 14 June, 2023;
originally announced June 2023.
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High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band
Authors:
Paweł Holewa,
Daniel A. Vajner,
Emilia Zięba-Ostój,
Maja Wasiluk,
Benedek Gaál,
Aurimas Sakanas,
Marek Burakowski,
Paweł Mrowiński,
Bartosz Krajnik,
Meng Xiong,
Kresten Yvind,
Niels Gregersen,
Anna Musiał,
Alexander Huck,
Tobias Heindel,
Marcin Syperek,
Elizaveta Semenova
Abstract:
Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic…
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Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.
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Submitted 23 May, 2024; v1 submitted 5 April, 2023;
originally announced April 2023.
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Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots
Authors:
Yury Berdnikov,
Pawel Holewa,
Shima Kadkhodazadeh,
Jan Mikolaj Smigiel,
Adrianna Frackowiak,
Aurimas Sakanas,
Kresten Yvind,
Marcin Syperek,
Elizaveta Semenova
Abstract:
Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailo…
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Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanow growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between $10^7$ and $10^{10} cm^{-2}$. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles resulting in well-isolated QD-originated emission lines in the telecom C-band.
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Submitted 26 January, 2023;
originally announced January 2023.
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Observation of room temperature excitons in an atomically thin topological insulator
Authors:
Marcin Syperek,
Raul Stühler,
Armando Consiglio,
Paweł Holewa,
Paweł Wyborski,
Łukasz Dusanowski,
Felix Reis,
Sven Höfling,
Ronny Thomale,
Werner Hanke,
Ralph Claessen,
Domenico Di Sante,
Christian Schneider
Abstract:
Optical spectroscopy of ultimately thin materials has significantly enhanced our understanding of collective excitations in low-dimensional semiconductors. This is particularly reflected by the rich physics of excitons in atomically thin crystals which uniquely arises from the interplay of strong Coulomb correlation, spin-orbit coupling (SOC), and lattice geometry. Here we extend the field by repo…
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Optical spectroscopy of ultimately thin materials has significantly enhanced our understanding of collective excitations in low-dimensional semiconductors. This is particularly reflected by the rich physics of excitons in atomically thin crystals which uniquely arises from the interplay of strong Coulomb correlation, spin-orbit coupling (SOC), and lattice geometry. Here we extend the field by reporting the observation of room temperature excitons in a material of non-trivial global topology. We study the fundamental optical excitation spectrum of a single layer of bismuth atoms epitaxially grown on a SiC substrate (hereafter bismuthene or Bi/SiC) which has been established as a large-gap, two-dimensional (2D) quantum spin Hall (QSH) insulator. Strongly developed optical resonances are observed to emerge around the direct gap at the K and K' points of the Brillouin zone, indicating the formation of bound excitons with considerable oscillator strength. These experimental findings are corroborated, concerning both the character of the excitonic resonances as well as their energy scale, by ab-initio \emph{GW} and Bethe-Salpeter equation calculations, confirming strong Coulomb interaction effects in these optical excitations. Our observations provide the first evidence of excitons in a 2D QSH insulator at room temperature, with excitonic and topological physics deriving from the very same electronic structure.
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Submitted 27 March, 2023; v1 submitted 13 September, 2022;
originally announced September 2022.
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Optimization of heterogeneously integrated InP-Si on-chip photonic components
Authors:
P. Mrowiński,
P. Holewa,
A. Sakanas,
G. Sęk,
E. Semenova,
M. Syperek
Abstract:
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-b…
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We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-band near 1550 nm. The platform can be fabricated using the existing semiconductor processing technologies. Our numerical studies reveal nearly 86% of the optical field transfer efficiency between geometrically-optimized InP/Si and Si waveguides, considering propagating field modes along a tapered geometry. The coupling efficiency of a dipole emitting to the hybrid InP/Si waveguide is evaluated to ~60%, which results in more than 50% of the total on-chip optical field transfer efficiency from the dipole to the Si waveguide. We also consider the off-chip outcoupling efficiency of the propagating photon field along the Si waveguide by examining the normal to the chip plane and in-plain outcoupling configurations. In the former case, the outcoupling amounts to ~26% when using the circular Bragg grating outcoupler design. In the latter case, the efficiency reaches up to 10%. Finally, we conclude that the conceptual device's performance is weakly susceptible to the transferred photon wavelength, offering a broadband operation within the 1.5-1.6 μm spectral range.
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Submitted 28 November, 2022; v1 submitted 31 August, 2022;
originally announced August 2022.
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Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
Authors:
Paweł Holewa,
Shima Kadkhodazadeh,
Michał Gawełczyk,
Paweł Baluta,
Anna Musiał,
Vladimir G. Dubrovskii,
Marcin Syperek,
Elizaveta Semenova
Abstract:
The rapidly develo** quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber networks and on-chip silicon photonic processors. InAs/InP quantum dots (QDs) are among the leading candidates for this purpose, due to their high emission effic…
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The rapidly develo** quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber networks and on-chip silicon photonic processors. InAs/InP quantum dots (QDs) are among the leading candidates for this purpose, due to their high emission efficiency in the required spectral range. However, fabricating versatile InAs/InP QD-based quantum emitters is challenging, especially as these QDs typically have asymmetric profiles in the growth plane, resulting in a substantial bright-exciton fine structure splitting (FSS). This hinders the generation of entangled photon pairs and thus, compromises the versatility of InAs/InP QDs. We overcome this by implementing droplet epitaxy (DE) synthesis of low surface density (2.8$\times$10$^8$ cm$^{-2}$) InAs QDs on an (001)-oriented InP substrate. The resulting QDs are located in etched pits, have concave bases, and most importantly, have symmetric in-plane profiles. We provide an analytical model to explain the kinetics of pit formation and QD base shape modification. Our theoretical calculations of electronic states reveal the properties of neutral and charged excitons and biexcitons confined in such QDs, which agree with the optical investigations of individual QDs. The optical response of QD ensembles suggests that FSS may indeed be negligible, as reflected in the vanishing degree of linear polarization. However, single QD spectrum gathered from an etched mesa shows moderate FSS of (50$\pm$5) $μ$eV that we link to destructive changes made in the QD environment during the post-growth processing. Finally, we show that the studied DE QDs provide a close-to-ideal single-photon emission purity of (92.5$\pm$7.5) $\%$ in the third telecom window.
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Submitted 14 July, 2021; v1 submitted 19 April, 2021;
originally announced April 2021.
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Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si
Authors:
Paweł Holewa,
Aurimas Sakanas,
Uğur Meriç Gür,
Paweł Mrowiński,
Alexander Huck,
Bi-Ying Wang,
Anna Musiał,
Kresten Yvind,
Niels Gregersen,
Marcin Syperek,
Elizaveta Semenova
Abstract:
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting photons in the telecom bands ($1460-1625$ nm) allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible app…
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Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting photons in the telecom bands ($1460-1625$ nm) allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of $\sim10\%$. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of a single-photon generation with purity $\mathcal{P}>98\%$ at the liquid helium temperature and $\mathcal{P}=75\%$ at $80$ K.
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Submitted 22 August, 2021; v1 submitted 15 April, 2021;
originally announced April 2021.
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Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
Authors:
Paweł Holewa,
Michał Gawełczyk,
Aleksander Maryński,
Paweł Wyborski,
Johann Peter Reithmaier,
Grzegorz Sęk,
Mohamed Benyoucef,
Marcin Syperek
Abstract:
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emis…
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We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emission in the range of $1.4-2.0$ $μ$m, essential for many near-infrared photonic applications. We find that, in contrast to the InAs/InP system, the multimodal distribution results here from a two-monolayer difference in QD height between consecutive families of dots. This may stem from the long-range ordering in the quaternary barrier alloy that stabilizes QD nucleation. Measuring the photoluminescence (PL) lifetime of the spectrally broad emission, we find a nearly dispersionless value of $1.3\pm0.3$ ns. Finally, we examine the temperature dependence of emission characteristics. We underline the impact of localized states in the wetting layer playing the role of carrier reservoir during thermal carrier redistribution. We determine the hole escape to the InAlGaAs barrier to be a primary PL quenching mechanism in these QDs.
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Submitted 18 November, 2020;
originally announced November 2020.
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Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
Authors:
Paweł Holewa,
Marek Burakowski,
Anna Musiał,
Nicole Srocka,
David Quandt,
André Strittmatter,
Sven Rodt,
Stephan Reitzenstein,
Grzegorz Sęk
Abstract:
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring exte…
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Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single photon emission with a purity of $g_{50\mathrm{K}}^{(2)}\left(0\right)=0.13$ up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated temperatures in the telecom O-band and highlight means for improvements in their performance.
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Submitted 19 November, 2020; v1 submitted 20 October, 2020;
originally announced October 2020.
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Optical and electronic properties of low-density InAs/InP quantum dot-like structures devoted to single-photon emitters at telecom wavelengths
Authors:
P. Holewa,
M. Gawełczyk,
C. Ciostek,
P. Wyborski,
S. Kadkhodazadeh,
E. Semenova,
M. Syperek
Abstract:
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks. However, obtaining the necessary low in-plane density of emitters remains a challenge. Such structures are also still less explored than their InAs/GaAs counterpart…
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Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks. However, obtaining the necessary low in-plane density of emitters remains a challenge. Such structures are also still less explored than their InAs/GaAs counterparts regarding optical properties of confined carriers. Here, we report on the growth via metal-organic vapor phase epitaxy and investigation of low-density InAs/InP QD-like structures, emitting in the range of 1.2-1.7 $μ$m, which includes the S, C, and L bands of the third optical window. We observe multiple photoluminescence (PL) peaks originating from flat QDs with height of small integer numbers of material monolayers. Temperature-dependent PL reveals redistribution of carriers between families of QDs. Via time-resolved PL, we obtain radiative lifetimes nearly independent of emission energy in contrast to previous reports on InAs/InP QDs, which we attribute to strongly height-dependent electron-hole correlations. Additionally, we observe neutral and charged exciton emission from spatially isolated emitters. Using the 8-band k${\cdot}$p model and configuration-interaction method, we successfully reproduce energies of emission lines, the dispersion of exciton lifetimes, carrier activation energies, as well as the biexciton binding energy, which allows for a detailed and comprehensive analysis of the underlying physics.
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Submitted 16 December, 2019;
originally announced December 2019.
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Thresholdless transition to coherent emission at telecom wavelengths from coaxial nanolasers
Authors:
Soren Kreinberg,
Kaisa Laiho,
Frederik Lohof,
William E. Hayenga,
Pawel Holewa,
Christopher Gies,
Mercedeh Khajavikhan,
Stephan Reitzenstein
Abstract:
The ongoing miniaturization of semiconductor lasers has enabled ultra-low threshold devices and even provided a path to approach thresholdless lasing with linear input-output characteristics. Such nanoscale lasers have initiated a discourse on the origin of the physical mechanisms involved and their boundaries, such as the required photon number, the importance of optimized light confinement in a…
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The ongoing miniaturization of semiconductor lasers has enabled ultra-low threshold devices and even provided a path to approach thresholdless lasing with linear input-output characteristics. Such nanoscale lasers have initiated a discourse on the origin of the physical mechanisms involved and their boundaries, such as the required photon number, the importance of optimized light confinement in a resonator and mode-density enhancement. Here, we investigate high-$β$ metal-clad coaxial nanolasers, which facilitate thresholdless lasing. We experimentally and theoretically investigate both the conventional lasing characteristics, as well as the photon statistics of the emitted light. While the former lacks adequate information to determine the threshold to coherent radiation, the latter reveals a finite threshold pump power. Our work clearly highlights an important and often misunderstood aspect of high-$β$ lasers, namely that a thresholdless laser does have a finite threshold pump power and must not be confused with a hypothetical zero threshold laser.
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Submitted 23 May, 2019;
originally announced May 2019.
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Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography
Authors:
Artem Shikin,
Elizaveta Lebedkina,
Czcibor Ciostek,
Pawel Holewa,
Sokol Ndoni,
Kristoffer Aldmal,
Kresten Yvind,
Marcin Syperek,
Elizaveta Semenova
Abstract:
We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength range around 1.55 um and above. We investigated a new type of diblock copolymer PS-b-PDMS (polystyrene-block-polydimethylsiloxane) for the fabrication of silicon…
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We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength range around 1.55 um and above. We investigated a new type of diblock copolymer PS-b-PDMS (polystyrene-block-polydimethylsiloxane) for the fabrication of silicon oxycarbide hard mask for selective area epitaxy of InAs/InP quantum dots. An array of InAs/InP quantum dots was selectively grown via droplet epitaxy. Our detailed investigation of the quantum dot carrier dynamics in the 10-300 K temperature range indicates the presence of a density of states located within the InP bandgap in the vicinity of quantum dots. Those defects have a substantial impact on the optical properties of quantum dots.
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Submitted 12 November, 2018; v1 submitted 9 November, 2018;
originally announced November 2018.
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Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography
Authors:
Nicole Srocka,
Anna Musiał,
Philipp-Immanuel Schneider,
Paweł Mrowiński,
Paweł Holewa,
Sven Burger,
David Quandt,
André Strittmatter,
Sven Rodt,
Stephan Reitzenstein,
Grzegorz Sęk
Abstract:
The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfe…
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The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10${\pm}$2) % has been experimentally obtained in the 1.3 μm wavelength range in agreement with finite-element method calculations.
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Submitted 2 May, 2018;
originally announced May 2018.
