Showing 1–47 of 47 results for author: Hohls, F

Two electrons interacting at a mesoscopic beam splitter

Authors: Niels Ubbelohde, Lars Freise, Elina Pavlovska, Peter G. Silvestrov, Patrik Recher, Martins Kokainis, Girts Barinovs, Frank Hohls, Thomas Weimann, Klaus Pierz, Vyacheslavs Kashcheyevs

Abstract: The non-linear response of a beam splitter to the coincident arrival of interacting particles enables numerous applications in quantum engineering and metrology yet poses considerable challenge to achieve focused interactions on the individual particle level. Here we probe the coincidence correlations at a mesoscopic constriction between individual ballistic electrons in a system with unscreened C… ▽ More The non-linear response of a beam splitter to the coincident arrival of interacting particles enables numerous applications in quantum engineering and metrology yet poses considerable challenge to achieve focused interactions on the individual particle level. Here we probe the coincidence correlations at a mesoscopic constriction between individual ballistic electrons in a system with unscreened Coulomb interactions and introduce concepts to quantify the associated parametric non-linearity. The full counting statistics of joint detection allows us to explore the interaction-mediated energy exchange. We observe an increase from 50\% up to 70\% in coincidence counts between statistically indistinguishable on demand sources, and a correlation signature consistent with independent tomography of the electron emission. Analytical modeling and numerical simulations underpin consistency of the experimental results with Coulomb interactions between two electrons counterpropagating in a dispersive quadratic saddle, and demonstrate interactions sufficiently strong, $U/(\hbar ω) > 10$, to enable single-shot in-flight detection and quantum logic gates. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Controlling the error mechanism in a tunable-barrier non-adiabatic charge pump by dynamic gate compensation

Authors: Frank Hohls, Vyacheslavs Kashcheyevs, Friederike Stein, Tobias Wenz, Bernd Kaestner, Hans W. Schumacher

Abstract: Single-electron pumps based on tunable-barrier quantum dots are the most promising candidates for a direct realization of the unit ampere in the recently revised SI: they are simple to operate and show high precision at high operation frequencies. The current understanding of the residual transfer errors at low temperature is based on the evaluation of backtunneling effects in the decay cascade mo… ▽ More Single-electron pumps based on tunable-barrier quantum dots are the most promising candidates for a direct realization of the unit ampere in the recently revised SI: they are simple to operate and show high precision at high operation frequencies. The current understanding of the residual transfer errors at low temperature is based on the evaluation of backtunneling effects in the decay cascade model. This model predicts a strong dependence on the ratio of the time dependent changes in the quantum dot energy and the tunneling barrier transparency. Here we employ a two-gate operation scheme to verify this prediction and to demonstrate control of the backtunneling error. We derive and experimentally verify a quantitative prediction for the error suppression, thereby confirming the basic assumptions of the backtunneling (decay cascade) model. Furthermore, we demonstrate a controlled transition from the backtunneling dominated regime into the thermal (sudden decoupling) error regime. The suppression of transfer errors by several orders of magnitude at zero magnetic field was additionally verified by a sub-ppm precision measurement. △ Less

Submitted 20 May, 2022; v1 submitted 20 December, 2021; originally announced December 2021.

Journal ref: Phys. Rev. B 105, 205425 (2022)

Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG

Authors: B. Buonacorsi, F. Sfigakis, A. Shetty, M. C. Tam, H. S. Kim, S. R. Harrigan, F. Hohls, M. E. Reimer, Z. R. Wasilewski, J. Baugh

Abstract: We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance consideri… ▽ More We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pum** in zero magnetic field and temperatures up to 5K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit $δ$ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and with further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields. △ Less

Submitted 16 September, 2021; v1 submitted 26 February, 2021; originally announced February 2021.

Comments: 4 pages + references, 4 figures. Version 3: Updated Figure 2 with higher resolution data. Minor revisions in main text. Conclusions and arguments unchanged. Added Supplementary Material file. Version 2: Main results and analysis unchanged, minor revisions in presentation. Included new figure about fabrication details and expanded relevance of results to quantum optoelectronic applications

Journal ref: Applied Physics Letters 119, 114001 (2021)

Roadmap on quantum nanotechnologies

Authors: Arne Laucht, Frank Hohls, Niels Ubbelohde, M Fernando Gonzalez-Zalba, David J Reilly, Søren Stobbe, Tim Schröder, Pasquale Scarlino, Jonne V Koski, Andrew Dzurak, Chih-Hwan Yang, Jun Yoneda, Ferdinand Kuemmeth, Hendrik Bluhm, Jarryd Pla, Charles Hill, Joe Salfi, Akira Oiwa, Juha T Muhonen, Ewold Verhagen, Matthew D LaHaye, Hyun Ho Kim, Adam W Tsen, Dimitrie Culcer, Attila Geresdi , et al. (4 additional authors not shown)

Abstract: Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu… ▽ More Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon. △ Less

Submitted 19 January, 2021; originally announced January 2021.

Comments: Roadmap article with contributed sections and subsections on: 1. Metrology and sensing 2. Quantum light sources, cavities and detectors 3. Quantum computing with spins 4. Nano and opto-mechanics 5. Low-dimensional systems 6. Molecular devices 7. Nanoplasmonics (47 pages, 25 figures). Contains arXiv:1907.02625, arXiv:1907.07087, arXiv:2001.11119, arXiv:2011.13907

Report number: NBI QDev 2021

Journal ref: Nanotechnology 32, 162003 (2021)

Quantum dot state initialization by control of tunneling rates

Authors: Tobias Wenz, Jevgeny Klochan, Frank Hohls, Thomas Gerster, Vyacheslavs Kashcheyevs, Hans W. Schumacher

Abstract: We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential selectivity of the tunnel coupling enables loading into specific quantum dot states by tuning independently energy and rates. While for the single-electron case orbital r… ▽ More We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential selectivity of the tunnel coupling enables loading into specific quantum dot states by tuning independently energy and rates. While for the single-electron case orbital relaxation leads to fast transition into the ground state, for electron pairs triplet-to-singlet relaxation is suppressed by long spin-flip times. This enables the fast gate-controlled initialization of either a singlet or a triplet electron pair state in a quantum dot with broad potential applications in quantum technologies. △ Less

Submitted 6 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. B 99, 201409 (2019)

Trap** and counting ballistic non-equilibrium electrons

Authors: L. Freise, T. Gerster, D. Reifert, T. Weimann, K. Pierz, F. Hohls, N. Ubbelohde

Abstract: We demonstrate the trap** of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an effective decay of excess energy for the loop around a neighboring, mesa-confined node, enabling high-fidelity trap**. Measuring the full counting statistics via si… ▽ More We demonstrate the trap** of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an effective decay of excess energy for the loop around a neighboring, mesa-confined node, enabling high-fidelity trap**. Measuring the full counting statistics via single-charge detection yields the trap** (and escape) probabilities of electrons scattered (and excited) within the node. Energetic and arrival-time distributions of captured electron wave packets are characterized by modulating tunnel barrier transmission. △ Less

Submitted 27 March, 2020; v1 submitted 28 February, 2019; originally announced February 2019.

Comments: 6 pages, 4 figures. Majorly revised, accepted manuscript

Journal ref: Phys. Rev. Lett. 124, 127701 (2020)

Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC

Authors: Davood Momeni Pakdehi, Klaus Pierz, Stefan Wundrack, Johannes Aprojanz, Thi Thuy Nhung Nguyen, Thorsten Dziomba, Frank Hohls, Andrey Bakin, Rainer Stosch, Christoph Tegenkamp, Franz J. Ahlers, Hans W. Schumacher

Abstract: In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Ou… ▽ More In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Our data are interpreted by a model based on the competition of the SiC decomposition rate, controlled by the Ar flow, with a uniform graphene buffer layer formation under the equilibrium process at the SiC surface. The proper choice of a set of growth parameters allows the growth of defect-free, ultra-smooth and coherent graphene-free buffer layer and bilayer-free monolayer graphene sheets which can be transformed into large-area high-quality quasi-freestanding monolayer and bilayer graphene (QFMLG and QFBLG) by hydrogen intercalation. AFM, scanning tunneling microscopy (STM), Raman spectroscopy and electronic transport measurements underline the excellent homogeneity of the resulting quasi-freestanding layers. Electronic transport measurements in four-point probe configuration reveal a homogeneous low resistance anisotropy on both μm- and mm scales. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Comments: Supplementary data is included

Journal ref: ACS Appl. Nano Mater. 2019, 2, 2, 844-852

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

Authors: Cay-Christian Kalmbach, Franz Josef Ahlers, Jürgen Schurr, André Müller, Juraj Feilhauer, Mattias Kruskopf, Klaus Pierz, Frank Hohls, Rolf J. Haug

Abstract: We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, d… ▽ More We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the theory of Kubakaddi [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and the quantum Hall breakdown sets in. △ Less

Submitted 16 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. B 94, 205430 (2016)

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

Authors: Mattias Kruskopf, Davood Momeni Pakdehi, Klaus Pierz, Stefan Wundrack, Rainer Stosch, Thorsten Dziomba, Martin Goetz, Jens Baringhaus, Johannes Aprojanz, Christoph Tegenkamp, Jakob Lidzba, Thomas Seyller, Frank Hohls, Franz J. Ahlers, Hans W. Schumacher

Abstract: We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation… ▽ More We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices. △ Less

Submitted 6 June, 2016; originally announced June 2016.

Comments: 20 pages, 6 Figures

Dopant-controlled single-electron pum** through a metallic island

Authors: Tobias Wenz, Frank Hohls, Xavier Jehl, Marc Sanquer, Sylvain Barraud, Jevgeny Klochan, Girts Barinovs, Vyacheslavs Kashcheyevs

Abstract: We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates,… ▽ More We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pum** is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations. △ Less

Submitted 1 March, 2016; originally announced March 2016.

Journal ref: Appl. Phys. Lett. 108, 213107 (2016)

Validation of a quantized-current source with 0.2 ppm uncertainty

Authors: Friederike Stein, Dietmar Drung, Lukas Fricke, Hansjörg Scherer, Frank Hohls, Christoph Leicht, Martin Götz, Christian Krause, Ralf Behr, Eckart Pesel, Klaus Pierz, Uwe Siegner, Franz-Josef Ahlers, Hans W. Schumacher

Abstract: We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies $f$ up to $1$ GHz. The measurements were performed with a new picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to $I=ef$ with $e$ the elementary charge was confirmed at $f=545$ MHz with a total relative uncertainty… ▽ More We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies $f$ up to $1$ GHz. The measurements were performed with a new picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to $I=ef$ with $e$ the elementary charge was confirmed at $f=545$ MHz with a total relative uncertainty of 0.2 ppm, improving the state of the art by about a factor of 5. For the first time, the accuracy of a possible future quantum current standard based on single-electron transport was experimentally validated to be better than the best realization of the ampere within the present SI. △ Less

Submitted 19 June, 2015; originally announced June 2015.

Journal ref: Appl. Phys. Lett. 107, 103501 (2015)

Partitioning of on-demand electron pairs

Authors: Niels Ubbelohde, Frank Hohls, Vyacheslavs Kashcheyevs, Timo Wagner, Lukas Fricke, Bernd Kästner, Klaus Pierz, Hans W. Schumacher, Rolf J. Haug

Abstract: We demonstrate the high fidelity splitting of electron pairs emitted on demand from a dynamic quantum dot by an electronic beam splitter. The fidelity of pair splitting is inferred from the coincidence of arrival in two detector paths probed by a measurement of the partitioning noise. The emission characteristic of the on-demand electron source is tunable from electrons being partitioned equally a… ▽ More We demonstrate the high fidelity splitting of electron pairs emitted on demand from a dynamic quantum dot by an electronic beam splitter. The fidelity of pair splitting is inferred from the coincidence of arrival in two detector paths probed by a measurement of the partitioning noise. The emission characteristic of the on-demand electron source is tunable from electrons being partitioned equally and independently to electron pairs being split with a fidelity of 90%. For low beam splitter transmittance we further find evidence of pair bunching violating statistical expectations for independent fermions. △ Less

Submitted 31 March, 2014; originally announced April 2014.

Journal ref: Nature Nanotechnology 10, 46-49 (2015)

A self-referenced single-electron quantized-current source

Authors: Lukas Fricke, Michael Wulf, Bernd Kaestner, Frank Hohls, Philipp Mirovsky, Brigitte Mackrodt, Ralf Dolata, Thomas Weimann, Klaus Pierz, Uwe Siegner, Hans W. Schumacher

Abstract: With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnellin… ▽ More With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnelling of electrons. However, the stochastic nature of quantum mechanical tunnelling intrinsically evokes uncontrolled deviations from the nominally quantized current. Alternatively, the counting of electrons [15, 16] has been explored but is severely limited in current amplitude and uncertainty by the low detector bandwidth. The late M. Wulf proposed [17] that this fundamental problem of electrical quantum metrology could be overcome by combining serial single-electron pumps with charge detectors allowing the generation of a quantized current and the in-situ detection of its stochastic deviations. Here, we experimentally demonstrate such quantized-current generation with in-situ detection of tunnelling errors at low frequencies and a reduction of the total current uncertainty by more than one order of magnitude. After frequency scaling this should enable a validated primary standard for the redefined SI base unit Ampere. △ Less

Submitted 19 December, 2013; originally announced December 2013.

Journal ref: Phys. Rev. Lett. 112, 226803 (2014)

Spin-dependent shot noise enhancement in a quantum dot

Authors: Niels Ubbelohde, Christian Fricke, Frank Hohls, Rolf J. Haug

Abstract: The spin-dependent dynamical blockade was investigated in a lateral quantum dot in a magnetic field. Spin-polarized edge channels in the two-dimensional leads and the spatial distribution of Landau orbitals in the dot modulate the tunnel coupling of the quantum dot level spectrum. In a measurement of the electron shot noise we observe a pattern of super-Poissonian noise which is correlated to the… ▽ More The spin-dependent dynamical blockade was investigated in a lateral quantum dot in a magnetic field. Spin-polarized edge channels in the two-dimensional leads and the spatial distribution of Landau orbitals in the dot modulate the tunnel coupling of the quantum dot level spectrum. In a measurement of the electron shot noise we observe a pattern of super-Poissonian noise which is correlated to the spin-dependent competition between different transport channels. △ Less

Submitted 30 July, 2013; originally announced July 2013.

Journal ref: Phys. Rev. B 88, 041304(R) (2013)

Bilayer Graphene Quantum Dot Defined by Topgates

Authors: André Müller, Bernd Kaestner, Frank Hohls, Thomas Weimann, Klaus Pierz, Hans W. Schumacher

Abstract: We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hop** and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature… ▽ More We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hop** and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout. △ Less

Submitted 19 March, 2014; v1 submitted 29 April, 2013; originally announced April 2013.

Journal ref: Journal of Applied Physics 115, 233710 (2014)

Towards quantized current arbitrary waveform synthesis

Authors: P. Mirovsky, L. Fricke, F. Hohls, B. Kaestner, Ch. Leicht, K. Pierz, J. Melcher, H. W. Schumacher

Abstract: The generation of ac modulated quantized current waveforms using a semiconductor non-adiabatic single electron pump is demonstrated. In standard operation the single electron pump generates a quantized output current of I = ef where e is the charge of the electron and f is the pum** frequency. Suitable frequency modulation of f allows the generation of ac modulated output currents with different… ▽ More The generation of ac modulated quantized current waveforms using a semiconductor non-adiabatic single electron pump is demonstrated. In standard operation the single electron pump generates a quantized output current of I = ef where e is the charge of the electron and f is the pum** frequency. Suitable frequency modulation of f allows the generation of ac modulated output currents with different characteristics. By sinusoidal and saw tooth like modulation of f accordingly modulated quantized current waveforms with kHz modulation frequencies and peak currents up to 100 pA are obtained. Such ac quantized current sources could find applications ranging from precision ac metrology to on-chip signal generation. △ Less

Submitted 22 March, 2013; originally announced March 2013.

Comments: 10 pages + 3 figures

Journal ref: J. Appl. Phys. 113, 213704 (2013)

Counting statistics for electron capture in a dynamic quantum dot

Authors: Lukas Fricke, Michael Wulf, Bernd Kaestner, Vyacheslavs Kashcheyevs, Janis Timoshenko, Pavel Nazarov, Frank Hohls, Philipp Mirovsky, Brigitte Mackrodt, Ralf Dolata, Thomas Weimann, Klaus Pierz, Hans W. Schumacher

Abstract: We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an a… ▽ More We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an adiabatically evolving grand canonical distribution, the other one is an athermal limit equivalent to the solution of a generalized decay cascade model. We identify the athermal capturing mechanism in our sample, testifying to the high precision of our combined theoretical and experimental methods. The distinction between the capturing mechanisms allows to derive efficient experimental strategies for improving the initialization. △ Less

Submitted 8 November, 2012; originally announced November 2012.

Comments: 7 pages, 8 figures, including supplementary material in the appendix

Journal ref: Phys. Rev. Lett. 110, 126803 (2013)

Strong quantum memory at resonant Fermi edges revealed by shot noise

Authors: N. Ubbelohde, K. Roszak, F. Hohls, N. Maire, R. J. Haug, T. Novotny

Abstract: Studies of non-equilibrium current fluctuations enable assessing correlations involved in quantum transport through nanoscale conductors. They provide additional information to the mean current on charge statistics and the presence of coherence, dissipation, disorder, or entanglement. Shot noise, being a temporal integral of the current autocorrelation function, reveals dynamical information. In p… ▽ More Studies of non-equilibrium current fluctuations enable assessing correlations involved in quantum transport through nanoscale conductors. They provide additional information to the mean current on charge statistics and the presence of coherence, dissipation, disorder, or entanglement. Shot noise, being a temporal integral of the current autocorrelation function, reveals dynamical information. In particular, it detects presence of non-Markovian dynamics, i.e., memory, within open systems, which has been subject of many current theoretical studies. We report on low-temperature shot noise measurements of electronic transport through InAs quantum dots in the Fermi-edge singularity regime and show that it exhibits strong memory effects caused by quantum correlations between the dot and fermionic reservoirs. Our work, apart from addressing noise in archetypical strongly correlated system of prime interest, discloses generic quantum dynamical mechanism occurring at interacting resonant Fermi edges. △ Less

Submitted 23 April, 2012; originally announced April 2012.

Comments: 6 pages, 3 figures

Journal ref: Scientific Reports 2, 374 (2012)

Measurement of finite-frequency current statistics in a single-electron transistor

Authors: Niels Ubbelohde, Christian Fricke, Christian Flindt, Frank Hohls, Rolf J. Haug

Abstract: Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have s… ▽ More Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single electron transistor (SET) can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the SET. We have directly measured the frequency-dependent current statistics and hereby fully characterized the fundamental tunneling processes in the SET. Our experiment paves the way for future investigations of interaction and coherence induced correlation effects in quantum transport. △ Less

Submitted 10 January, 2012; originally announced January 2012.

Comments: 7 pages, 3 figures, published in Nature Communications (open access)

Journal ref: Nat. Commun. 3:612 (2012)

A quantized current source with mesoscopic feedback

Authors: Lukas Fricke, Frank Hohls, Niels Ubbelohde, Bernd Kaestner, Vyacheslavs Kashcheyevs, Christoph Leicht, Philipp Mirovsky, Klaus Pierz, Hans W. Schumacher, Rolf J. Haug

Abstract: We study a mesoscopic circuit of two quantized current sources, realized by non-adiabatic single- electron pumps connected in series with a small micron-sized island in between. We find that quantum transport through the second pump can be locked onto the quantized current of the first one by a feedback due to charging of the mesoscopic island. This is confirmed by a measurement of the charge vari… ▽ More We study a mesoscopic circuit of two quantized current sources, realized by non-adiabatic single- electron pumps connected in series with a small micron-sized island in between. We find that quantum transport through the second pump can be locked onto the quantized current of the first one by a feedback due to charging of the mesoscopic island. This is confirmed by a measurement of the charge variation on the island using a nearby charge detector. Finally, the charge feedback signal clearly evidences loading into excited states of the dynamic quantum dot during single-electron pump operation. △ Less

Submitted 27 May, 2011; originally announced May 2011.

Journal ref: Phys. Rev. B 83, 193306 (2011)

Integrated quantized electronics: a semiconductor quantized voltage source

Authors: Frank Hohls, Armin C. Welker, Christoph Leicht, Lukas Fricke, Bernd Kaestner, Philipp Mirovsky, André Müller, Klaus Pierz, Uwe Siegner, Hans Werner Schumacher

Abstract: The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in electrical quantum metrology. Also semiconductors are routinely applied in electrical quantum metrology making use of the quantum Hall effect. However, despite their br… ▽ More The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in electrical quantum metrology. Also semiconductors are routinely applied in electrical quantum metrology making use of the quantum Hall effect. However, despite their broad range of further applications e.g. in integrated circuits, quantized voltage generation by a semiconductor device has never been obtained. Here we report a semiconductor quantized voltage source generating quantized voltages Vout = f\cdot(h/e). It is based on an integrated quantized circuit of a single electron pump operated at pum** frequency f and a quantum Hall device monolithically integrated in series. The output voltages of several \muV are expected to be scalable by orders of magnitude using present technology. The device might open a new route towards the closure of the quantum metrological triangle. Furthermore it represents a universal electrical quantum reference allowing to generate quantized values of the three most relevant electrical units of voltage, current, and resistance based on fundamental constants using a single device. △ Less

Submitted 9 March, 2011; originally announced March 2011.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. Lett. 109, 056802 (2012)

Generation of energy selective excitations in quantum Hall edge states

Authors: C. Leicht, P. Mirovsky, B. Kaestner, F. Hohls, V. Kashcheyevs, E. V. Kurganova, U. Zeitler, T. Weimann, K. Pierz, H. W. Schumacher

Abstract: We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.… ▽ More We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states. △ Less

Submitted 29 September, 2010; originally announced September 2010.

Journal ref: Semicond. Sci. Technol. 26, 055010 (2011)

High-order cumulants in the counting statistics of asymmetric quantum dots

Authors: Christian Fricke, Frank Hohls, Nandhavel Sethubalasubramanian, Lukas Fricke, Rolf J. Haug

Abstract: Measurements of single electron tunneling through a quantum dot using a quantum point contact as charge detector have been performed for very long time traces with very large event counts. This large statistical basis is used for a detailed examination of the counting statistics for varying symmetry of the quantum dot system. From the measured statistics we extract high order cumulants describing… ▽ More Measurements of single electron tunneling through a quantum dot using a quantum point contact as charge detector have been performed for very long time traces with very large event counts. This large statistical basis is used for a detailed examination of the counting statistics for varying symmetry of the quantum dot system. From the measured statistics we extract high order cumulants describing the distribution. Oscillations of the high order cumulants are observed when varying the symmetry. We compare this behavior to the observed oscillation in time dependence and show that the variation of both system variables lead to the same kind of oscillating response. △ Less

Submitted 3 June, 2010; originally announced June 2010.

Comments: 3 pages

Journal ref: Appl. Phys. Lett. 96, 202103 (2010)

High cumulants in the counting statistics measured for a quantum dot

Authors: Christian Fricke, Frank Hohls, Christian Flindt, Rolf J. Haug

Abstract: We report on measurements of single electron tunneling through a quantum dot using a quantum point contact as non-invasive charge detector with fast time response. We elaborate on the unambiguous identification of individual tunneling events and determine the distribution of transferred charges, the so-called full counting statistics. We discuss our data analysis, including the error estimates o… ▽ More We report on measurements of single electron tunneling through a quantum dot using a quantum point contact as non-invasive charge detector with fast time response. We elaborate on the unambiguous identification of individual tunneling events and determine the distribution of transferred charges, the so-called full counting statistics. We discuss our data analysis, including the error estimates of the measurement, and show that the quality of our experimental results is sufficiently high to extract cumulants of the distribution up to the 20th order for short times. △ Less

Submitted 2 March, 2010; originally announced March 2010.

Comments: 4 pages, 3 figures, Contribution to EP2DS18-MSS14, Kobe, Japan, July 2009

Journal ref: Physica E 42, 848 (2010)

Universal oscillations in counting statistics

Authors: Christian Flindt, Christian Fricke, Frank Hohls, Tomas Novotny, Karel Netocny, Tobias Brandes, Rolf J. Haug

Abstract: Noise is a result of stochastic processes that originate from quantum or classical sources. Higher-order cumulants of the probability distribution underlying the stochastic events are believed to contain details that characterize the correlations within a given noise source and its interaction with the environment, but they are often difficult to measure. Here we report measurements of the trans… ▽ More Noise is a result of stochastic processes that originate from quantum or classical sources. Higher-order cumulants of the probability distribution underlying the stochastic events are believed to contain details that characterize the correlations within a given noise source and its interaction with the environment, but they are often difficult to measure. Here we report measurements of the transient cumulants <<n^m>> of the number n of passed charges to very high orders (up to m=15) for electron transport through a quantum dot. For large m, the cumulants display striking oscillations as functions of measurement time with magnitudes that grow factorially with m. Using mathematical properties of high-order derivatives in the complex plane we show that the oscillations of the cumulants in fact constitute a universal phenomenon, appearing as functions of almost any parameter, including time in the transient regime. These ubiquitous oscillations and the factorial growth are system-independent and our theory provides a unified interpretation of previous theoretical studies of high-order cumulants as well as our new experimental data. △ Less

Submitted 1 July, 2009; v1 submitted 7 January, 2009; originally announced January 2009.

Comments: 19 pages, 4 figures, final version as published in PNAS

Journal ref: Proc. Natl. Acad. Sci. USA 106, 10116 (2009)

Noise enhancement due to quantum coherence in coupled quantum dots

Authors: G. Kiesslich, E. Schoell, T. Brandes, F. Hohls, R. J. Haug

Abstract: We show that the intriguing observation of noise enhancement in the charge transport through two vertically coupled quantum dots can be explained by the interplay of quantum coherence and strong Coulomb blockade. We demonstrate that this novel mechanism for super-Poissonian charge transfer is very sensitive to decoherence caused by electron-phonon scattering as inferred from the measured tempera… ▽ More We show that the intriguing observation of noise enhancement in the charge transport through two vertically coupled quantum dots can be explained by the interplay of quantum coherence and strong Coulomb blockade. We demonstrate that this novel mechanism for super-Poissonian charge transfer is very sensitive to decoherence caused by electron-phonon scattering as inferred from the measured temperature dependence. △ Less

Submitted 20 June, 2007; v1 submitted 12 June, 2007; originally announced June 2007.

Comments: 4 pages, 3 figures, corrected version (Figs.2 and 3)

Journal ref: Phys. Rev. Lett. 99, 206602 (2007)

Bimodal Counting Statistics in Single Electron Tunneling through a Quantum Dot

Authors: C. Fricke, F. Hohls, W. Wegscheider, R. J. Haug

Abstract: We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For certain configurations we observe super-Poissonian statistic… ▽ More We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For certain configurations we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts we relate this to a slow switching between different electron configurations on the quantum dot. △ Less

Submitted 16 May, 2007; originally announced May 2007.

Noise at a Fermi-edge singularity

Authors: N. Maire, F. Hohls, T. Luedtke, K. Pierz, R. J. Haug

Abstract: We present noise measurements of self-assembled InAs quantum dots at high magnetic fields. In comparison to I-V characteristics at zero magnetic field we notice a strong current overshoot which is due to a Fermi-edge singularity. We observe an enhanced suppression in the shot noise power simultaneous to the current overshoot which is attributed to the electron-electron interaction in the Fermi-e… ▽ More We present noise measurements of self-assembled InAs quantum dots at high magnetic fields. In comparison to I-V characteristics at zero magnetic field we notice a strong current overshoot which is due to a Fermi-edge singularity. We observe an enhanced suppression in the shot noise power simultaneous to the current overshoot which is attributed to the electron-electron interaction in the Fermi-edge singularity. △ Less

Submitted 28 September, 2006; originally announced September 2006.

Journal ref: Physical Review B 75, 233304 (2007)

Ballistic electron spectroscopy

Authors: F. Hohls, M. Pepper, J. P. Griffiths, G. A. C. Jones, D. A. Ritchie

Abstract: We demonstrate the feasibility of ballistic electron spectroscopy as a new tool for mesoscopic physics. A quantum dot is utilised as an energy-selective detector of non-equilibrium ballistic electrons injected into a two-dimensional electron system. In this paper we use a second quantum dot as the electron injector to evaluate the scheme. We propose an application in the study of interacting 1D… ▽ More We demonstrate the feasibility of ballistic electron spectroscopy as a new tool for mesoscopic physics. A quantum dot is utilised as an energy-selective detector of non-equilibrium ballistic electrons injected into a two-dimensional electron system. In this paper we use a second quantum dot as the electron injector to evaluate the scheme. We propose an application in the study of interacting 1D and 0D systems. △ Less

Submitted 20 July, 2006; originally announced July 2006.

Comments: 3 pages, 4 figures

Journal ref: Applied Physics Letters 89, 212103 (2006)

Specific Heat of a Fractional Quantum Hall System

Authors: F. Schulze-Wischeler, U. Zeitler, C. v. Zobeltitz, F. Hohls, D. Reuter, A. D. Wieck, H. Frahm, R. J. Haug

Abstract: Using a time-resolved phonon absorption technique, we have measured the specific heat of a two-dimensional electron system in the fractional quantum Hall effect regime. For filling factors $ν= 5/3, 4/3, 2/3, 3/5, 4/7, 2/5$ and 1/3 the specific heat displays a strong exponential temperature dependence in agreement with excitations across a quasi-particle gap. At filling factor $ν= 1/2$ we were ab… ▽ More Using a time-resolved phonon absorption technique, we have measured the specific heat of a two-dimensional electron system in the fractional quantum Hall effect regime. For filling factors $ν= 5/3, 4/3, 2/3, 3/5, 4/7, 2/5$ and 1/3 the specific heat displays a strong exponential temperature dependence in agreement with excitations across a quasi-particle gap. At filling factor $ν= 1/2$ we were able to measure the specific heat of a composite fermion system for the first time. The observed linear temperature dependence on temperature down to $T = 0.14$ K agrees well with early predictions for a Fermi liquid of composite fermions. △ Less

Submitted 5 December, 2006; v1 submitted 6 July, 2006; originally announced July 2006.

Comments: 4 pages, 4 figures (version is 1. resubmission: Added a paragraph to include the problems which arise by the weak temperature dependence at ν= 1/2, updated affiliation)

Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

Authors: P. Barthold, F. Hohls, N. Maire, K. Pierz, R. J. Haug

Abstract: We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots. We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots. △ Less

Submitted 20 March, 2006; originally announced March 2006.

Journal ref: Phys. Rev. Lett. 96, 246804 (2006)

Coupling symmetry of quantum dot states

Authors: M. C. Rogge, B. Harke, C. Fricke, F. Hohls, M. Reinwald, W. Wegscheider, R. J. Haug

Abstract: With non-invasive methods, we investigate ground and excited states of a lateral quantum dot. Charge detection via a quantum point contact is used to map the dot dynamics in a regime where the current through the dot is too low for transport measurements. In this way we investigate and compare the tunneling rates from the dot to source and drain. We find a symmetry line on which the tunneling ra… ▽ More With non-invasive methods, we investigate ground and excited states of a lateral quantum dot. Charge detection via a quantum point contact is used to map the dot dynamics in a regime where the current through the dot is too low for transport measurements. In this way we investigate and compare the tunneling rates from the dot to source and drain. We find a symmetry line on which the tunneling rates to both leads are equal. In this situation ground states as well as excited states influence the mean charge of the dot. A detailed study in this regime reveals that the coupling symmetry depends on the number of states contributing to transport and on the spatial distribution of individual states. △ Less

Submitted 4 August, 2005; originally announced August 2005.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 72, 233402 (2005)

Non-invasive detection of charge-rearrangement in a quantum dot in high magnetic fields

Authors: C. Fricke, M. C. Rogge, B. Harke, M. Reinwald, W. Wegscheider, F. Hohls, R. J. Haug

Abstract: We demonstrate electron redistribution caused by magnetic field on a single quantum dot measured by means of a quantum point contact as non-invasive detector. Our device which is fabricated by local anodic oxidation allows to control independently the quantum point contact and all tunnelling barriers of the quantum dot. Thus we are able to measure both the change of the quantum dot charge and al… ▽ More We demonstrate electron redistribution caused by magnetic field on a single quantum dot measured by means of a quantum point contact as non-invasive detector. Our device which is fabricated by local anodic oxidation allows to control independently the quantum point contact and all tunnelling barriers of the quantum dot. Thus we are able to measure both the change of the quantum dot charge and also changes of the electron configuration at constant number of electrons on the quantum dot. We use these features to exploit the quantum dot in a high magnetic field where transport through the quantum dot displays the effects of Landau shells and spin blockade. We confirm the internal rearrangement of electrons as function of the magnetic field for a fixed number of electrons on the quantum dot. △ Less

Submitted 29 April, 2005; originally announced April 2005.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. B 72, 193302 (2005)

Observation of inter-edge magnetoplasmon mode in a degenerate two-dimensional electron gas

Authors: G. Sukhodub, F. Hohls, R. J. Haug

Abstract: We study the propagation of edge magnetoplasmons by time-resolved current measurements in a sample which allows for selective detection of edge states in the quantum Hall regime. We observe two decoupled modes of edge and inter-edge magnetoplasmons at filling factors close to 3. From the analysis of the propagation velocities of each mode the internal spatial parameters of the edge structure are… ▽ More We study the propagation of edge magnetoplasmons by time-resolved current measurements in a sample which allows for selective detection of edge states in the quantum Hall regime. We observe two decoupled modes of edge and inter-edge magnetoplasmons at filling factors close to 3. From the analysis of the propagation velocities of each mode the internal spatial parameters of the edge structure are derived. △ Less

Submitted 7 July, 2004; originally announced July 2004.

Comments: 4 pages, 4 figures, submitted

Journal ref: Phys. Rev. Lett., vol. 93, p. 196801 (2004)

Shot noise in tunneling through a single quantum dot

Authors: A. Nauen, F. Hohls, N. Maire, K. Pierz, R. J. Haug

Abstract: We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as function of bias voltage. Both effects can be linked to the scanning of the 3-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainl… ▽ More We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as function of bias voltage. Both effects can be linked to the scanning of the 3-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach. △ Less

Submitted 3 March, 2004; originally announced March 2004.

Journal ref: Phys. Rev. B 70, 033305 (2004)

Phonon Excitations of Composite Fermion Landau Levels

Authors: F. Schulze-Wischeler, F. Hohls, U. Zeitler, D. Reuter, A. D. Wieck, R. J. Haug

Abstract: Phonon excitations of fractional quantum Hall states at filling factors nu = 1/3, 2/5, 4/7, 3/5, 4/3, and 5/3 are experimentally shown to be based on Landau level transitions of Composite Fermions. At filling factor nu = 2/3, however, a linear field dependence of the excitation energy in the high-field regime rather hints towards a spin transition excited by the phonons. We propose to explain th… ▽ More Phonon excitations of fractional quantum Hall states at filling factors nu = 1/3, 2/5, 4/7, 3/5, 4/3, and 5/3 are experimentally shown to be based on Landau level transitions of Composite Fermions. At filling factor nu = 2/3, however, a linear field dependence of the excitation energy in the high-field regime rather hints towards a spin transition excited by the phonons. We propose to explain this surprising observation by an only partially polarized 2/3-ground-state making the energetically lower lying spin transition also allowed for phonon excitations. △ Less

Submitted 6 May, 2004; v1 submitted 2 March, 2004; originally announced March 2004.

Comments: 4 pages, 3 figures, 1 table, accepted for Phys. Rev. Lett

Journal ref: Phys. Rev. Lett 93, 026801 (2004)

Shot noise in resonant tunneling through a zero-dimensional state with a complex energy spectrum

Authors: A. Nauen, F. Hohls, J. Konemann, R. J. Haug

Abstract: We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observed super-Poissonian shot noise up to values of the Fano factor $α\approx 10$. We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observed super-Poissonian shot noise up to values of the Fano factor $α\approx 10$. △ Less

Submitted 13 February, 2004; originally announced February 2004.

Comments: 4 pages, 4 figures, accepted for Phys. Rev. B

Journal ref: Phys. Rev. B 69, 113316 (2004)

Direct Measurement of the g-Factor of Composite Fermions

Authors: F. Schulze-Wischeler, E. Mariani, F. Hohls, R. J. Haug

Abstract: The activation gap $Δ$ of the fractional quantum Hall states at constant fillings $ν=2/3$ and 2/5 has been measured as a function of the perpendicular magnetic field $B$. A linear dependence of $Δ$ on $B$ is observed while approaching the spin polarization transition. This feature allows a direct measurement of the $g$-factor of composite fermions which appears to be heavily renormalized by inte… ▽ More The activation gap $Δ$ of the fractional quantum Hall states at constant fillings $ν=2/3$ and 2/5 has been measured as a function of the perpendicular magnetic field $B$. A linear dependence of $Δ$ on $B$ is observed while approaching the spin polarization transition. This feature allows a direct measurement of the $g$-factor of composite fermions which appears to be heavily renormalized by interactions and strongly sensitive to the electronic filling factor. △ Less

Submitted 10 October, 2003; v1 submitted 22 September, 2003; originally announced September 2003.

Comments: 4 pages, 4 figures Changed content: Fokus more on g-factors (and less on other details)

Journal ref: Phys. Rev. Lett 92, 156401 (2004)

Shot Noise in Tunneling through a Quantum Dot Array

Authors: G. Kiesslich, A. Wacker, E. Schoell, A. Nauen, F. Hohls, R. J. Haug

Abstract: The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling… ▽ More The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression. △ Less

Submitted 23 September, 2002; originally announced September 2002.

Comments: 4 pages, 2 figures

Journal ref: phys. status solidi (c) 0, 1293 (2003)

Dynamical scaling of the quantum Hall plateau transition

Authors: F. Hohls, U. Zeitler, R. J. Haug, R. Meisels, K. Dybko, F. Kuchar

Abstract: Using different experimental techniques we examine the dynamical scaling of the quantum Hall plateau transition in a frequency range f = 0.1-55 GHz. We present a scheme that allows for a simultaneous scaling analysis of these experiments and all other data in literature. We observe a universal scaling function with an exponent kappa = 0.5 +/- 0.1, yielding a dynamical exponent z = 0.9 +/- 0.2. Using different experimental techniques we examine the dynamical scaling of the quantum Hall plateau transition in a frequency range f = 0.1-55 GHz. We present a scheme that allows for a simultaneous scaling analysis of these experiments and all other data in literature. We observe a universal scaling function with an exponent kappa = 0.5 +/- 0.1, yielding a dynamical exponent z = 0.9 +/- 0.2. △ Less

Submitted 26 July, 2002; v1 submitted 17 July, 2002; originally announced July 2002.

Comments: v2: Length shortened to fulfil Journal criteria

Journal ref: Phys. Rev. Lett. 89, 276801 (2002)

Shot noise in self-assembled InAs quantum dots

Authors: A. Nauen, I. Hapke-Wurst, F. Hohls, U. Zeitler, R. J. Haug, K. Pierz

Abstract: We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor $α$ with an average value of $α\approx 0.8$ consistent with the asymmetry of the tunn… ▽ More We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor $α$ with an average value of $α\approx 0.8$ consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in $α$ can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current. △ Less

Submitted 10 July, 2002; originally announced July 2002.

Conductance fluctuations at the quantum Hall plateau transition

Authors: F. Hohls, U. Zeitler, R. J. Haug

Abstract: We analyze the conductance fluctuations observed in the quantum Hall regime for a bulk two-dimensional electron system in a Corbino geometry. We find that characteristics like the power spectral density and the temperature dependence agree well with simple expectations for universal conductance fluctuations in metals, while the observed amplitude is reduced. In addition, the dephasing length… ▽ More We analyze the conductance fluctuations observed in the quantum Hall regime for a bulk two-dimensional electron system in a Corbino geometry. We find that characteristics like the power spectral density and the temperature dependence agree well with simple expectations for universal conductance fluctuations in metals, while the observed amplitude is reduced. In addition, the dephasing length $L_Φ\propto T^{-1/2}$, which governs the temperature dependence of the fluctuations, is surprisingly different from the scaling length $L_{sc}\propto T^{-1}$ governing the width of the quantum Hall plateau transition. △ Less

Submitted 18 April, 2002; originally announced April 2002.

Journal ref: Phys. Rev. B 66, 073304 (2002)

Fabrication of quantum point contacts by engraving GaAs/AlGaAs-heterostructures with a diamond tip

Authors: J. Regul, U. F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R. J. Haug, A. Malave, E. Oesterschulze, D. Reuter, A. D. Wieck

Abstract: We use the all-diamond tip of an atomic force microscope for the direct engraving of high quality quantum point contacts in GaAs/AlGaAs-heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm the depletion length of insulating lines is reduced by a factor of two with the diamond pr… ▽ More We use the all-diamond tip of an atomic force microscope for the direct engraving of high quality quantum point contacts in GaAs/AlGaAs-heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect free ballistic constrictions show well resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements. △ Less

Submitted 9 September, 2002; v1 submitted 22 February, 2002; originally announced February 2002.

Comments: 3 pages, 3 figures

Journal ref: Applied Physics Letters 81(11), 2023-2025 (2002)

Hop** conductivity in the quantum Hall effect -- revival of universal scaling

Authors: F. Hohls, U. Zeitler, R. J. Haug

Abstract: We have measured the temperature dependence of the conductivity $σ_{xx}$ of a two-dimensional electron system deep into the localized regime of the quantum Hall plateau transition. Using variable-range hop** theory we are able to extract directly the localization length $ξ$ from this experiment. We use our results to study the scaling behavior of $ξ$ as a function of the filling factor distanc… ▽ More We have measured the temperature dependence of the conductivity $σ_{xx}$ of a two-dimensional electron system deep into the localized regime of the quantum Hall plateau transition. Using variable-range hop** theory we are able to extract directly the localization length $ξ$ from this experiment. We use our results to study the scaling behavior of $ξ$ as a function of the filling factor distance $|δν|$ to the critical point of the transition. We find for all samples a power-law behavior $ξ\propto|δν|^{-γ}$ with a universal scaling exponent $γ= 2.3$ as proposed theoretically. △ Less

Submitted 19 July, 2001; originally announced July 2001.

Journal ref: Phys. Rev. Lett. 88, 036802 (2002)

High Frequency Conductivity in the Quantum Hall Regime

Authors: F. Hohls, U. Zeitler, R. J. Haug

Abstract: We have measured the complex conductivity $σ_{xx}$ of a two-dimensional electron system in the quantum Hall regime up to frequencies of 6 GHz at electron temperatures below 100 mK. Using both its imaginary and real part we show that $σ_{xx}$ can be scaled to a single function for different frequencies and for all investigated transitions between plateaus in the quantum Hall effect. Additionally,… ▽ More We have measured the complex conductivity $σ_{xx}$ of a two-dimensional electron system in the quantum Hall regime up to frequencies of 6 GHz at electron temperatures below 100 mK. Using both its imaginary and real part we show that $σ_{xx}$ can be scaled to a single function for different frequencies and for all investigated transitions between plateaus in the quantum Hall effect. Additionally, the conductivity in the variable-range hop** regime is used for a direct evaluation of the localization length $ξ$. Even for large filing factor distances $δν$ from the critical point we find $ξ\propto δν^{-γ}$ with a scaling exponent $γ=2.3$. △ Less

Submitted 1 November, 2000; originally announced November 2000.

Journal ref: Phys. Rev. Lett. 86 (22), 5124 (2001)

High frequency conductivity in the quantum Hall effect

Authors: F. Hohls, U. Zeitler, R. J. Haug, K. Pierz

Abstract: We present high frequency measurements of the diagonal conductivity sigma_xx of a two dimensional electron system in the integer quantum Hall regime. The width of the sigma_xx peaks between QHE minima is analyzed within the framework of scaling theory using both temperature T=100-700 mK and frequency f <= 6 GHz in a two parameter scaling ansatz. For the plateau transition width we find scaling b… ▽ More We present high frequency measurements of the diagonal conductivity sigma_xx of a two dimensional electron system in the integer quantum Hall regime. The width of the sigma_xx peaks between QHE minima is analyzed within the framework of scaling theory using both temperature T=100-700 mK and frequency f <= 6 GHz in a two parameter scaling ansatz. For the plateau transition width we find scaling behaviour for both its temperature dependence as well as its frequency dependence. However, the corresponding scaling exponent for temperature kappa=0.42 significantly differs from the one deduced for frequency scaling (c=0.6). Additionally we use the high frequency experiments to suppress the contact resistances that strongly influences DC measurements. We find an intrinsic critical conductivity sigma_c=0.17e^2/h, virtually independent of temperature and filling factor, and deviating significantly from the proposed universal value 0.5e^2/h. △ Less

Submitted 26 October, 2000; originally announced October 2000.

Comments: Proceedings of the '14th international conference on high magnetic fields in semiconductor physics' (Semimag-2000) in Matsue, Japan

Journal ref: Physica B 298, 88 (2001)

Phonon emission and absorption in the fractional quantum Hall effect

Authors: F. Schulze-Wischeler, U. Zeitler, M. Monka, F. Hohls, R. J. Haug, K. Eberl

Abstract: We investigate the time dependent thermal relaxation of a two-dimensional electron system in the fractional quantum Hall regime where ballistic phonons are used to heat up the system to a non-equilibrium temperature. The thermal relaxation of a 2DES at $ν=1/2$ can be described in terms of a broad band emission of phonons, with a temperature dependence proportional to $T^4$. In contrast, the rela… ▽ More We investigate the time dependent thermal relaxation of a two-dimensional electron system in the fractional quantum Hall regime where ballistic phonons are used to heat up the system to a non-equilibrium temperature. The thermal relaxation of a 2DES at $ν=1/2$ can be described in terms of a broad band emission of phonons, with a temperature dependence proportional to $T^4$. In contrast, the relaxation at fractional filling $ν=2/3$ is characterized by phonon emission around a single energy, the magneto-roton gap. This leads to a strongly reduced energy relaxation rate compared to $ν=1/2$ with only a weak temperature dependence for temperatures 150 mK $< T <$ 400 mK. △ Less

Submitted 22 September, 2000; originally announced September 2000.

Comments: 4 pages, 3 figures; 14th International Conference on High Magnetic Fields in Semiconductor Physics, September 24-29, 2000, Matsue, Japan

Journal ref: Physica B 298, 164 (2001)