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Ruddlesden-Popper chalcogenides push the limit of mechanical stiffness and glass-like thermal conductivity in crystals
Authors:
Md Shafkat Bin Hoque,
Eric R. Hoglund,
Boyang Zhao,
De-Liang Bao,
Hao Zhou,
Sandip Thakur,
Eric Osei-Agyemang,
Khalid Hattar,
Ethan A. Scott,
Mythili Surendran,
John A. Tomko,
John T. Gaskins,
Kiumars Aryana,
Sara Makarem,
Ganesh Balasubramanian,
Ashutosh Giri,
Tianli Feng,
Jordan A. Hachtel,
Jayakanth Ravichandran,
Sokrates T. Pantelides,
Patrick E. Hopkins
Abstract:
Insulating materials featuring ultralow thermal conductivity for diverse applications also require robust mechanical properties. Conventional thinking, however, which correlates strong bonding with high atomic-vibration-mediated heat conduction, led to diverse weakly bonded materials that feature ultralow thermal conductivity and low elastic moduli. One must, therefore, search for strongly-bonded…
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Insulating materials featuring ultralow thermal conductivity for diverse applications also require robust mechanical properties. Conventional thinking, however, which correlates strong bonding with high atomic-vibration-mediated heat conduction, led to diverse weakly bonded materials that feature ultralow thermal conductivity and low elastic moduli. One must, therefore, search for strongly-bonded materials in which heat transport is impeded by other means. Here, we report intrinsic, glass-like, ultralow thermal conductivity and ultrahigh elastic-modulus/thermal-conductivity ratio in single-crystalline, BaZrS3-derived, Ruddlesden-Popper phases Ban+1ZrnS3n+1, n = 2, 3. Their key features are strong anharmonicity and intra-unit-cell rock-salt blocks. The latter produce strongly bonded intrinsic superlattices, impeding heat conduction by broadband reduction of phonon velocities and mean free paths and concomitant strong phonon localization. The present study initiates a paradigm of "mechanically stiff phonon glasses".
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Submitted 5 December, 2023;
originally announced December 2023.
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Photoconductive Effects in Single Crystals of BaZrS$_3$
Authors:
Boyang Zhao,
Huandong Chen,
Ragib Ahsan,
Fei Hou,
Eric R Hoglund,
Shantanu Singh,
Huan Zhao,
Han Htoon,
Andrey Krayev,
Maruda Shanmugasundaram,
Patrick E Hopkins,
Jan Seidel,
Rehan Kapadia,
Jayakanth Ravichandran
Abstract:
Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZr…
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Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$.
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Submitted 4 October, 2023;
originally announced October 2023.
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Direct Visualization of Localized Vibrations at Complex Grain Boundaries
Authors:
Eric R. Hoglund,
De-Liang Bao,
Andrew O'Hara,
Thomas W. Pfeifer,
Md Shafkat Bin Hoque,
Sara Makarem,
James M. Howe,
Sokrates T. Pantelides,
Patrick E. Hopkins,
Jordan A. Hachtel
Abstract:
Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The change in functionality at a GB is a direct result of unique local atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared-optical,…
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Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The change in functionality at a GB is a direct result of unique local atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared-optical, and thermal properties. Here, we examine a SrTiO3 GB using atomic-resolution aberration-corrected scanning transmission electron microscopy (STEM) and ultra-high-energy-resolution monochromated electron energy-loss spectroscopy (EELS), in conjunction with density functional theory (DFT) calculations. This combination enables the direct correlation of the GB structure, composition, and chemical bonding with atomic vibrations within the GB dislocation-cores. We observe that nonstoichiometry and changes in coordination and bonding at the GB leads to a redistribution of vibrational states at the GB and its dislocation-cores relative to the bounding grains. The access to localized vibrations within GBs provided by ultrahigh spatial/spectral resolution EELS correlated with atomic coordination, bonding, and stoichiometry and validated by theory, provides a direct route to quantifying the impact of individual boundaries on macroscopic properties.
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Submitted 24 August, 2022; v1 submitted 30 July, 2022;
originally announced August 2022.
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Nanoscale Phonon Spectroscopy Reveals Emergent Interface Vibrational Structure of Superlattices
Authors:
Eric R. Hoglund,
De-Liang Bao,
Andrew O'Hara,
Sara Makarem,
Zachary T. Piontkowski,
Joseph R. Matson,
Ajay K. Yadav,
Ryan C. Haisimaier,
Roman Engel-Herbert,
Jon F. Ihlefeld,
Jayakanth Ravichandran,
Ramamoorthy Ramesh,
Joshua D. Caldwell,
Thomas E. Beechem,
John A. Tomko,
Jordan A. Hachtel,
Sokrates T. Pantelides,
Patrick E. Hopkins,
James M. Howe
Abstract:
As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity…
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As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity $^{7,8}$, has only been inferred in experiments indirectly. While it is accepted that intrinsic phonons change near boundaries $^{9,10}$, the physical mechanisms and length-scales through which interfacial effects influence materials remain unclear. Herein, we demonstrate the localized vibrational response associated with the interfaces in SrTiO$_3$-CaTiO$_3$ superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy and density-functional-theory calculations. Symmetries atypical of either constituent material are observed within a few atomic planes near the interface. The local symmetries create local phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. The results provide direct visualization and quantification, illustrating the progression of the local symmetries and interface vibrations as they come to determine the vibrational response of an entire superlattice; stated differently, the progression from a material with interfaces, to a material dominated by interfaces, to a material of interfaces as the period decreases. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behavior. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids having emergent infrared and thermal responses.
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Submitted 4 October, 2021; v1 submitted 20 May, 2021;
originally announced May 2021.
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Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices
Authors:
Kiumars Aryana,
John T. Gaskins,
Joyeeta Nag,
Derek A. Stewart,
Zhaoqiang Bai,
Saikat Mukhopadhyay,
John C. Read,
David H. Olson,
Eric R. Hoglund,
James M. Howe,
Ashutosh Giri,
Michael K. Grobis,
Patrick E. Hopkins
Abstract:
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close…
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Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.
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Submitted 10 November, 2020;
originally announced November 2020.
