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Optical nano artifact metrics using silicon random nanostructures
Authors:
Tsutomu Matsumoto,
Naoki Yoshida,
Shumpei Nishio,
Morihisa Hoga,
Yasuyuki Ohyagi,
Naoya Tate,
Makoto Naruse
Abstract:
Nano artifact metrics exploit unique physical attributes of nanostructured matter for authentication and clone resistance, which is vitally important in the age of Internet-of-Things where securing identities is critical. However, high-cost and huge experimental apparatuses, such as scanning electron microscopy, have been required in the former studies. Herein, we demonstrate an optical approach t…
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Nano artifact metrics exploit unique physical attributes of nanostructured matter for authentication and clone resistance, which is vitally important in the age of Internet-of-Things where securing identities is critical. However, high-cost and huge experimental apparatuses, such as scanning electron microscopy, have been required in the former studies. Herein, we demonstrate an optical approach to characterise the nanoscale-precision signatures of silicon random structures towards realising low-cost and high-value information security technology. Unique and versatile silicon nanostructures are generated via resist collapse phenomena, which contains dimensions that are well below the diffraction limit of light. We exploit the nanoscale precision ability of confocal laser microscopy in the height dimension, and our experimental results demonstrate that the vertical precision of measurement is essential in satisfying the performances required for artifact metrics. Furthermore, by using state-of-the-art nanostructuring technology, we experimentally fabricate clones from the genuine devices. We demonstrate that the statistical properties of the genuine and clone devices are successfully exploited, showing that the liveness-detection-type approach, which is widely deployed in biometrics, is valid in artificially-constructed solid-state nanostructures. These findings pave the way for reasonable and yet sufficiently secure novel principles for information security based on silicon random nanostructures and optical technologies.
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Submitted 6 May, 2016;
originally announced May 2016.
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Eigenanalysis of morphological diversity in silicon random nanostructures formed via resist collapse
Authors:
Makoto Naruse,
Morihisa Hoga,
Yasuyuki Ohyagi,
Shumpei Nishio,
Naoya Tate,
Naoki Yoshida,
Tsutomu Matsumoto
Abstract:
This paper demonstrates eigenanalysis to quantitatively reveal the diversity and capacity of identities offered by the morphological diversity in silicon nanostructures formed via random collapse of resist. The analysis suggests that approximately 10^115 possible identities are provided per 0.18-um^2 area of nanostructures, indicating that nanoscale morphological signatures will be extremely usefu…
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This paper demonstrates eigenanalysis to quantitatively reveal the diversity and capacity of identities offered by the morphological diversity in silicon nanostructures formed via random collapse of resist. The analysis suggests that approximately 10^115 possible identities are provided per 0.18-um^2 area of nanostructures, indicating that nanoscale morphological signatures will be extremely useful for future information security applications where securing identities is critical. The eigenanalysis provides an intuitive physical picture and quantitative characterization of the diversity of structural fluctuations while unifying measurement stability concerns, which will be widely applicable to other materials, devices, and system architectures.
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Submitted 11 April, 2016; v1 submitted 26 February, 2016;
originally announced February 2016.
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Nano-artifact metrics based on random collapse of resist
Authors:
Tsutomu Matsumoto,
Morihisa Hoga,
Yasuyuki Ohyagi,
Mikio Ishikawa,
Makoto Naruse,
Kenta Hanaki,
Ryosuke Suzuki,
Daiki Sekiguchi,
Naoya Tate,
Motoichi Ohtsu
Abstract:
Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithograph…
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Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.
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Submitted 19 December, 2014;
originally announced December 2014.
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Unidirectional light propagation through two-layer nanostructures based on optical near-field interactions
Authors:
Makoto Naruse,
Hirokazu Hori,
Satoshi Ishii,
Aurélien Drezet,
Serge Huant,
Morihisa Hoga,
Yasuyuki Ohyagi,
Tsutomu Matsumoto,
Naoya Tate,
Motoichi Ohtsu
Abstract:
We theoretically demonstrate direction-dependent polarization conversion efficiency, yielding unidirectional light transmission, through a two-layer nanostructure by using the angular spectrum representation of optical near-fields. The theory provides results that are consistent with electromagnetic numerical simulations. This study reveals that optical near-field interactions among nanostructured…
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We theoretically demonstrate direction-dependent polarization conversion efficiency, yielding unidirectional light transmission, through a two-layer nanostructure by using the angular spectrum representation of optical near-fields. The theory provides results that are consistent with electromagnetic numerical simulations. This study reveals that optical near-field interactions among nanostructured matter can provide unique optical properties, such as the unidirectionality observed here, and offers fundamental guiding principles for understanding and engineering nanostructures for realizing novel functionalities.
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Submitted 18 December, 2014;
originally announced December 2014.