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Photoconductive gain in semiconductor quantum wires
Authors:
K. -D. Hof,
C. Rossler,
S. Manus,
J. P. Kotthaus,
A. W. Holleitner,
D. Schuh,
W. Wegscheider
Abstract:
We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which sh…
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We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the one-dimensional subbands of the quantum wire. Here we demonstrate that the effect persists up to a temperature of about 17 Kelvin.
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Submitted 6 October, 2008;
originally announced October 2008.
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Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires
Authors:
K. -D. Hof,
C. Rossler,
S. Manus,
J. P. Kotthaus,
A. W. Holleitner,
D. Schuh,
W. Wegscheider
Abstract:
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well whic…
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We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The non-linear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes.
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Submitted 6 June, 2008;
originally announced June 2008.
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Optically induced transport properties of freely suspended semiconductor submicron channels
Authors:
C. Rossler,
K. -D. Hof,
S. Manus,
S. Ludwig,
J. P. Kotthaus,
J. Simon,
A. W. Holleitner,
D. Schuh,
W. Wegscheider
Abstract:
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodo** effect. The hereby enhanced electronic conductance exhibits a ti…
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We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodo** effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.
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Submitted 15 May, 2008;
originally announced May 2008.
