Showing 1–10 of 10 results for author: Hoermann, C

CMS Barrel Pixel Detector Overview

Authors: H. Chr. Kästli, W. Bertl, W. Erdmann, K. Gabathuler, Ch. Hörmann, R. Horisberger, S. König, D. Kotlinski, B. Meier, P. Robmann, T. Rohe, S. Streuli

Abstract: The pixel detector is the innermost tracking device of the CMS experiment at the LHC. It is built from two independent sub devices, the pixel barrel and the end disks. The barrel consists of three concentric layers around the beam pipe with mean radii of 4.4, 7.3 and 10.2 cm. There are two end disks on each side of the interaction point at 34.5 cm and 46.5 cm. This article gives an overview of t… ▽ More The pixel detector is the innermost tracking device of the CMS experiment at the LHC. It is built from two independent sub devices, the pixel barrel and the end disks. The barrel consists of three concentric layers around the beam pipe with mean radii of 4.4, 7.3 and 10.2 cm. There are two end disks on each side of the interaction point at 34.5 cm and 46.5 cm. This article gives an overview of the pixel barrel detector, its mechanical support structure, electronics components, services and its expected performance. △ Less

Submitted 21 February, 2007; originally announced February 2007.

Comments: Proceedings of Vertex06, 15th International Workshop on Vertex Detectors

Journal ref: Nucl.Instrum.Meth.A582:724-727,2007

Building CMS Pixel Barrel Detectur Modules

Authors: S. König, Ch. Hörmann, R. Horisberger, B. Meier, T. Rohe, S. Streuli, R. Weber, H. Chr. Kästli, W. Erdmann

Abstract: For the barrel part of the CMS pixel tracker about 800 silicon pixel detector modules are required. The modules are bump bonded, assembled and tested at the Paul Scherrer Institute. This article describes the experience acquired during the assembly of the first ~200 modules. For the barrel part of the CMS pixel tracker about 800 silicon pixel detector modules are required. The modules are bump bonded, assembled and tested at the Paul Scherrer Institute. This article describes the experience acquired during the assembly of the first ~200 modules. △ Less

Submitted 21 February, 2007; originally announced February 2007.

Comments: 5 pages, 7 figures, Vertex2006

Journal ref: Nucl.Instrum.Meth.A582:776-780,2007

Design and performance of the silicon sensors for the CMS barrel pixel detector

Authors: Y. Allkofer, C. Amsler, D. Bortoletto, V. Chiochia, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, R. Horisberger, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, M. Swartz, T. Speer

Abstract: The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program… ▽ More The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program was carried out on the H2 beam line of the CERN SPS. In this paper we describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices. Measurements of charge collection, hit detection efficiency, Lorentz angle and spatial resolution are presented. △ Less

Submitted 12 February, 2007; originally announced February 2007.

Comments: 22 pages, 21 figures

Journal ref: Nucl.Instrum.Meth.A584:25-41,2008

Simulation of Heavily Irradiated Silicon Pixel Detectors

Authors: M. Swartz, V. Chiochia, Y. Allkofer, C. Amsler, D. Bortoletto, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, T. Speer

Abstract: We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}… ▽ More We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective do** density. This observation calls into question the practice of using effective do** densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS. △ Less

Submitted 24 May, 2006; originally announced May 2006.

Comments: Invited talk at International Symposium on the Development of Detectors for Particle, AstroParticle and Synchrtron Radiation Experiments, Stanford Ca (SNIC06) 8 pages, LaTeX, 11 eps figures

Journal ref: ECONF C0604032:0014,2006

Design and Performance of the CMS Pixel Detector Readout Chip

Authors: H. Chr. Kaestli, M. Barbero, W. Erdmann, Ch. Hoermann, R. Horisberger, D. Kotlinski, B. Meier

Abstract: The readout chip for the CMS pixel detector has to deal with an enormous data rate. On-chip zero suppression is inevitable and hit data must be buffered locally during the latency of the first level trigger. Dead-time must be kept at a minimum. It is dominated by contributions coming from the readout. To keep it low an analog readout scheme has been adopted where pixel addresses are analog coded… ▽ More The readout chip for the CMS pixel detector has to deal with an enormous data rate. On-chip zero suppression is inevitable and hit data must be buffered locally during the latency of the first level trigger. Dead-time must be kept at a minimum. It is dominated by contributions coming from the readout. To keep it low an analog readout scheme has been adopted where pixel addresses are analog coded. We present the architecture of the final CMS pixel detector readout chip with special emphasis on the analog readout chain. Measurements of its performance are discussed. △ Less

Submitted 24 February, 2006; v1 submitted 18 November, 2005; originally announced November 2005.

Comments: 8 pages, 11 figures. Contribution to the Proceedings of the Pixel2005 Workshop, Bonn, Germany

Journal ref: Nucl.Instrum.Meth. A565 (2006) 188-194

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

Authors: M. Swartz, V. Chiochia, Y. Allkofer, D. Bortoletto, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, T. Speer

Abstract: We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}… ▽ More We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective do** density. This observation calls into question the practice of using effective do** densities to characterize irradiated silicon. △ Less

Submitted 5 January, 2006; v1 submitted 5 October, 2005; originally announced October 2005.

Comments: 8 pages, LaTeX document, 10 figures. Presented at Pixel 2005 Workshop, Bonn, Sept 2005. Small cosmetic revisions in response to referee comments and to fix broken reference links

Journal ref: Nucl.Instrum.Meth. A565 (2006) 212-220

A double junction model of irradiated silicon pixel sensors for LHC

Authors: V. Chiochia, M. Swartz, Y. Allkofer, D. Bortoletto, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, M. Swartz, T. Speer

Abstract: In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trap** of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to… ▽ More In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trap** of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages. △ Less

Submitted 30 June, 2005; originally announced June 2005.

Comments: Talk presented at the 10th European Symposium on Semiconductor Detectors, June 12-16 2005, Wildbad Kreuth, Germany. 9 pages, 4 figures

Journal ref: Nucl.Instrum.Meth.A568:51-55,2006

Extraction of electric field in heavily irradiated silicon pixel sensors

Authors: A. Dorokhov, Y. Allkofer, C. Amsler, D. Bortoletto, V. Chiochia, L. Cremaldi, S. Cucciarelli, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. Sanders, S. Son, T. Speer, M. Swartz

Abstract: A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to… ▽ More A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors. △ Less

Submitted 25 June, 2005; v1 submitted 6 December, 2004; originally announced December 2004.

Comments: 6 pages, 11 figures, presented at the 13th International Workshop on Vertex Detectors for High Energy Physics, September 13-18, 2004, Menaggio-Como, Italy. Submitted to Nucl. Instr. Meth. A

Journal ref: Nucl.Instrum.Meth.A560:112-117,2006

Fluence Dependence of Charge Collection of irradiated Pixel Sensors

Authors: T. Rohe, D. Bortoletto, V. Chiochia, L. M. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, D. A. Sanders, S. Son, T. Speer, M. Swartz

Abstract: The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between… ▽ More The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between $4.7\times 10^{13}$ and $2.6\times 10^{15} \Neq$ have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed analogue readout and is therefore well suited to measure the charge collection properties of the sensors. In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated. △ Less

Submitted 4 January, 2005; v1 submitted 23 November, 2004; originally announced November 2004.

Comments: 11 Pages, Presented at the 5th Int. Conf. on Radiation Effects on Semiconductor Materials Detectors and Devices, October 10-13, 2004 in Florence, Italy, v3: more typos corrected, minor changes required by the referee

Journal ref: Nucl.Instrum.Meth.A552:232-238,2005

Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

Authors: Vincenzo Chiochia, Morris Swartz, Daniela Bortoletto, Lucien Cremaldi, Susanna Cucciarelli, Andrei Dorokhov, Christoph Hoermann, Dongwook Kim, Marcin Konecki, Danek Kotlinski, Kirill Prokofiev, Christian Regenfus, Tilman Rohe, David A. Sanders, Seunghee Son, Thomas Speer

Abstract: Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standar… ▽ More Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective do** density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trap** observed in the data. △ Less

Submitted 4 May, 2005; v1 submitted 16 November, 2004; originally announced November 2004.

Comments: 8 pages, 11 figures. Talk presented at the 2004 IEEE Nuclear Science Symposium, October 18-21, Rome, Italy. Submitted to IEEE Transactions on Nuclear Science

Journal ref: IEEE Trans.Nucl.Sci. 52 (2005) 1067-1075