Showing 1–20 of 20 results for author: Hoegen, M H

Electron phonon coupling in ultrathin Pb films on Si(111): Where the heck is the energy?

Authors: M. Tajik, T. Witte, Ch. Brand, L. Rettig, B. Sothmann, U. Bovensiepen, M. Horn von Hoegen

Abstract: In this work, we study the heat transfer from electron to phonon system within a five monolayer thin epitaxial Pb film on Si(111) upon fs-laser excitation. The response of the electron system is determined using time-resolved photoelectron spectroscopy while the lattice excitation is measured by means of the Debye-Waller effect in time-resolved reflection high-energy electron diffraction. The elec… ▽ More In this work, we study the heat transfer from electron to phonon system within a five monolayer thin epitaxial Pb film on Si(111) upon fs-laser excitation. The response of the electron system is determined using time-resolved photoelectron spectroscopy while the lattice excitation is measured by means of the Debye-Waller effect in time-resolved reflection high-energy electron diffraction. The electrons lose their heat within 0.5 ps while the lattice temperature rises slowly in 3.5 to 8 ps, leaving a gap of 3-7 ps. We propose that the hidden energy is transiently stored in high-frequency phonon modes for which diffraction is insensitive and which are excited in 0.5 ps. Within a three-temperature model we use three heat baths, namely electrons, high-frequency and low-frequency phonon modes to simulate the observations. The excitation of low-frequency acoustic phonons, i.e., thermalization of the lattice is facilitated through anharmonic phonon-phonon interaction. △ Less

Submitted 7 December, 2023; originally announced December 2023.

Ultrafast Electron Diffraction at Surfaces:From Nanoscale Heat Transport to Driven Phase Transitions

Authors: Michael Horn von Hoegen

Abstract: Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond time scale. In order to study such ultra-fast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe scheme. Reflection high energy electron diffraction (RHEED) with grazing incident electrons ensures surface sensitivity for the probing electron pulses. Utilizing… ▽ More Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond time scale. In order to study such ultra-fast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe scheme. Reflection high energy electron diffraction (RHEED) with grazing incident electrons ensures surface sensitivity for the probing electron pulses. Utilizing the Debye-Waller effect, we studied the nanoscale heat transport from an ultrathin film through a hetero-interface or the dam** of vibrational excitations in monolayer adsorbate systems on the lower ps-time scale. By means of spot profile analysis the different cooling rates of epitaxial Ge nanostructures of different size and strain state were determined. The excitation and relaxation dynamics of a driven phase transition far away from thermal equilibrium is demonstrated using the In-induced (8x2) reconstruction on Si(111). This Peierls-distorted surface charge density wave system exhibits a discontinuous phase transition at 130 K from a (8x2) insulating ground state to (4x1) metallic excited state. Upon excitation by a fs-laser pulse, this structural phase transition is non-thermally driven in only 700 fs into the excited state. A small barrier of 40 meV hinders the immediate recovery of the groundstate and the system is found in a metastable supercooled state for up to few nanoseconds. △ Less

Submitted 30 November, 2023; originally announced November 2023.

Cool Cooling Collar for Bake-Out of Temperature-Sensitive Devices

Authors: Jonas D. Fortmann, Christian Brand, Michael Horn-von Hoegen

Abstract: A combination of a pumpable gate valve and a self-built cooling collar permits bake-out of an ultra-high vacuum chamber without having to dismount sensitive equipment. A small pump port on the closed gate valve maintains ultra-high vacuum conditions for a TVIPS TemCam-XF416 imaging electron detector in the case of venting the main chamber. The water-cooled collar mounted to the detector housing pr… ▽ More A combination of a pumpable gate valve and a self-built cooling collar permits bake-out of an ultra-high vacuum chamber without having to dismount sensitive equipment. A small pump port on the closed gate valve maintains ultra-high vacuum conditions for a TVIPS TemCam-XF416 imaging electron detector in the case of venting the main chamber. The water-cooled collar mounted to the detector housing prevents heating of the detector upon bake-out of the ultra-high vacuum chamber. △ Less

Submitted 22 November, 2023; v1 submitted 16 November, 2023; originally announced November 2023.

Comments: 3 pages, 2 figures

Kibble-Zurek dynamics in the anisotropic Ising model of the Si(001) surface

Authors: Gernot Schaller, Friedemann Queisser, Seyedeh Parya Katoorani, Christian Brand, Christian Kohlfürst, Mark R. Freeman, Alfred Hucht, Peter Kratzer, Björn Sothmann, Michael Horn-von Hoegen, Ralf Schützhold

Abstract: As a simplified description of the non-equilibrium dynamics of buckled dimers on the Si(001) surface, we consider the anisotropic 2D Ising model and study the freezing of spatial correlations during a cooling quench across the critical point. We observe a crossover from 1D to 2D behavior. For rapid cooling, we find effectively 1D behavior in the strongly coupled direction, for which we provide an… ▽ More As a simplified description of the non-equilibrium dynamics of buckled dimers on the Si(001) surface, we consider the anisotropic 2D Ising model and study the freezing of spatial correlations during a cooling quench across the critical point. We observe a crossover from 1D to 2D behavior. For rapid cooling, we find effectively 1D behavior in the strongly coupled direction, for which we provide an exact analytic solution of the non-equilibrium dynamics. For slower cooling rates, we start to see 2D behavior where our numerical simulations show an approach to the usual Kibble-Zurek scaling in 2D. △ Less

Submitted 21 June, 2024; v1 submitted 27 October, 2023; originally announced October 2023.

Comments: 4+2+3 pages, 4 figures

Disentangling the Electronic and Lattice Contributions to the Dielectric Response of Photoexcited Bismuth

Authors: Fabian Thiemann, Germán Sciaini, Alexander Kassen, Tyler S. Lott, Michael Horn-von Hoegen

Abstract: Elucidating the interplay between nuclear and electronic degrees of freedom that govern the complex dielectric behavior of materials under intense photoexcitation is essential for tailoring optical properties on demand. However, conventional transient reflectivity experiments have been unable to differentiate between real and imaginary components of the dielectric response, omitting crucial electr… ▽ More Elucidating the interplay between nuclear and electronic degrees of freedom that govern the complex dielectric behavior of materials under intense photoexcitation is essential for tailoring optical properties on demand. However, conventional transient reflectivity experiments have been unable to differentiate between real and imaginary components of the dielectric response, omitting crucial electron-lattice interactions. Utilizing thin film interference we unambiguously determined the photoinduced change in complex dielectric function in the Peierls semimetal bismuth and examined its dependence on the excitation density and nuclear motion of the A$_{1g}$ phonon. Our modeled transient reflectivity data reveals a progressive broadening and redshift of Lorentz oscillators with increasing excitation density and underscores the importance of both, electronic and nuclear coordinates in the renormalization of interband transitions. △ Less

Submitted 26 October, 2023; originally announced October 2023.

Comments: Manuscript (6 pages) plus supplemental material (6 pages)

Non-Equilibrium Pathways for Excitation of Bulk and Surface Phonons through Anharmonic Coupling

Authors: C. Brand, V. Tinnemann, A. Hanisch-Blicharski, M. Tajik, J. D. Fortmann, A. Kaßen, F. Thiemann, M. Horn-von Hoegen

Abstract: Upon impulsive optical excitation of solid-state materials, the non-equilibrium flow of energy from the excited electronic system to the lattice degrees of freedom typically happens in a few picoseconds. Here we identified the surface of thin Bi films grown on Si(001) as an additional subsystem which is excited much slower on a 100 ps timescale that is caused by decoupling due to mismatched phonon… ▽ More Upon impulsive optical excitation of solid-state materials, the non-equilibrium flow of energy from the excited electronic system to the lattice degrees of freedom typically happens in a few picoseconds. Here we identified the surface of thin Bi films grown on Si(001) as an additional subsystem which is excited much slower on a 100 ps timescale that is caused by decoupling due to mismatched phonon dispersions relations of bulk and surface. Anharmonic coupling among the phonon systems provides pathways for excitations which exhibits a 1/T-dependence causing a speed-up of surface excitation at higher temperatures. A quantitative justification is provided by phonon Umklapp processes from lattice thermal conductivity of the Bi bulk. Three-temperature model simulations reveal a pronounced non-equilibrium situation up to nanoseconds: initially, the surface is colder than the bulk, that situation is then inverted during cooling and the surface feeds energy back into the bulk phonon system. △ Less

Submitted 7 March, 2024; v1 submitted 24 October, 2023; originally announced October 2023.

Momentum space separation of quantum path interferences between photons and surface plasmon polaritons in nonlinear photoemission microscopy

Authors: Pascal Dreher, David Janoschka, Harald Giessen, Ralf Schützhold, Timothy J. Davis, Michael Horn-von Hoegen, Frank-J. Meyer zu Heringdorf

Abstract: Quantum path interferences occur whenever multiple equivalent and coherent transitions result in a common final state. Such interferences strongly modify the probability of a particle to be found in that final state, a key concept of quantum coherent control. When multiple nonlinear and energy-degenerate transitions occur in a system, the multitude of possible quantum path interferences is hard to… ▽ More Quantum path interferences occur whenever multiple equivalent and coherent transitions result in a common final state. Such interferences strongly modify the probability of a particle to be found in that final state, a key concept of quantum coherent control. When multiple nonlinear and energy-degenerate transitions occur in a system, the multitude of possible quantum path interferences is hard to disentangle experimentally. Here, we analyze quantum path interferences during the nonlinear emission of electrons from hybrid plasmonic and photonic fields using time-resolved photoemission electron microscopy. We experimentally distinguish quantum path interferences by exploiting the momentum difference between photons and plasmons and through balancing the relative contributions of their respective fields. Our work provides a fundamental understanding of the nonlinear photon-plasmon-electron interaction. Distinguishing emission processes in momentum space, as introduced here, will ultimately allow nano-optical quantum-correlations to be studied without destroying the quantum path interferences. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Journal ref: Nanophotonics, vol. 13, no. 9, 2024, pp. 1593-1602

Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class

Authors: Christian Brand, Alfred Hucht, Hamid Mehdipour, Giriraj Jnawali, Jonas D. Fortmann, Mohammad Tajik, Rüdiger Hild, Björn Sothmann, Peter Kratzer, Ralf Schützhold, Michael Horn-von Hoegen

Abstract: The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling c… ▽ More The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling constants of an effective lattice Hamiltonian describing the dimer interactions. Experimentally, the phase transition from the low-temperature $c(4 {\times} 2)$- to the high-temperature $p(2 {\times} 1)$-reconstructed surface is followed through the intensity and width of the superstructure spots within the temperature range 78-400 K. Near the critical temperature $T_c = 190.6\,\mathrm{K}$, we observe universal critical behavior of spot intensities and correlation lengths which falls into the universality class of the two-dimensional (2D) Ising model. From the ratio of correlation lengths along and across the dimer rows we determine effective nearest-neighbor couplings of an anisotropic 2D Ising model, $J_\parallel = (-24.9 \pm 0.9_\mathrm{stat} \pm 1.3_\mathrm{sys})\,\mathrm{meV}$ and $J_\perp = (-0.8 \pm 0.1_\mathrm{stat})\,\mathrm{meV}$. We find that the experimentally determined coupling constants of the Ising model can be reconciled with those of the more complex lattice Hamiltonian from DFT when the critical behavior is of primary interest. The anisotropy of the interactions derived from the experimental data via the 2D Ising model is best matched by DFT calculations using the PBEsol functional. The trends in the calculated anisotropy are consistent with the surface stress anisotropy predicted by the DFT functionals, pointing towards the role of surface stress reduction as a driving force for establishing the $c(4 {\times} 2)$-reconstructed ground state. △ Less

Submitted 6 March, 2024; v1 submitted 16 October, 2023; originally announced October 2023.

A modular table-top setup for ultrafast X-ray diffraction

Authors: Wei Lu, Matthieu Nicoul, Uladzimir Shymanovich, Alexander Tarasevitch, Michael Horn-von Hoegen, Dietrich von der Linde, Klaus Sokolowski-Tinten

Abstract: We present a table-top setup for femtosecond time-resolved X-ray diffraction based on a Cu Kα (8.05 keV) laser driven plasma X-ray source. Due to its modular design it provides high accessibility to its individual components (e.g. X-ray optics and sample environment). The Kα-yield of the source is optimized using a pre-pulse scheme. A magnifying multilayer X-ray mirror with Montel-Helios geometry… ▽ More We present a table-top setup for femtosecond time-resolved X-ray diffraction based on a Cu Kα (8.05 keV) laser driven plasma X-ray source. Due to its modular design it provides high accessibility to its individual components (e.g. X-ray optics and sample environment). The Kα-yield of the source is optimized using a pre-pulse scheme. A magnifying multilayer X-ray mirror with Montel-Helios geometry is used to collect the emitted radiation, resulting in a quasi-collimated flux of more than 105 Cu Kα photons/pulse im**ing on the sample under investigation at a repetition rate of 10 Hz. A gas ionization chamber detector is placed right after the X-ray mirror and used for normalization of the diffraction signals enabling the measurement of relative signal changes of less than 1% even at the given low repetition rate. Time-resolved diffraction experiments on laser-excited epitaxial Bi films serve as an example to demonstrate the capabilities of the set-up. The set-up can also be used for Debye-Scherrer type measurements on poly-crystalline samples. △ Less

Submitted 16 October, 2023; originally announced October 2023.

Comments: 23 pages incl. 10 figures

Dimer Coupling Energies of the Si(001) Surface

Authors: Christian Brand, Alfred Hucht, Giriraj Jnawali, Jonas D. Fortmann, Björn Sothmann, Hamid Mehdipour, Peter Kratzer, Ralf Schützhold, Michael Horn-von Hoegen

Abstract: The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justifie… ▽ More The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justified by the large ratio of correlation lengths, $ξ_\parallel^+/ξ_\perp^+ = 5.2$ of the fluctuating $c(4 {\times} 2)$ domains above the critical temperature $T_\mathrm{c} = (190.6 \pm 10)$ K. We obtain effective couplings $J_\parallel = (-24.9 \pm 1.3)$ meV along the dimer rows and $J_\perp = (-0.8 \pm 0.1)$ meV across the dimer rows, i.e., antiferromagnetic-like coupling of the dimers with $c(4 {\times} 2)$ symmetry. △ Less

Submitted 3 February, 2023; originally announced February 2023.

Comments: Accepted for publication at Physical Review Letters on 02Feb23

Ultrafast transport mediated homogenization of photoexcited electrons governs the softening of the $A_\mathrm{1g}$ phonon in bismuth

Authors: Fabian Thiemann, Germán Sciaini, Alexander Kassen, Ulrich Hagemann, Frank Meyer zu Heringdorf, Michael Horn-von Hoegen

Abstract: In order to determine the role of non-thermal transport of hot carriers which is decisive for the dissipation of energy in condensed matter we performed time-resolved broadband femtosecond transient reflectivity measurements on $7-197 \mathrm{nm}$ thick Bi(111) films epitaxially grown on Si(111). We monitored the behavior of the Fourier amplitude and the central frequency of the coherent… ▽ More In order to determine the role of non-thermal transport of hot carriers which is decisive for the dissipation of energy in condensed matter we performed time-resolved broadband femtosecond transient reflectivity measurements on $7-197 \mathrm{nm}$ thick Bi(111) films epitaxially grown on Si(111). We monitored the behavior of the Fourier amplitude and the central frequency of the coherent $A_\mathrm{1g}$ phonon mode as function of the incident fluence, film thickness, and probe wavelength in the range of $580 -700 \mathrm{nm}$. The frequency redshift that follows photoexcitation was used as a robust quantity to determine the effective distribution of excited carriers that governs the displacive excitation mechanism of coherent $A_\mathrm{1g}$ phonons in Bi. For Bi films up to $50 \mathrm{nm}$ thickness a homogeneous excitation due to the ultrafast transport of hot charge carriers is observed, limited by a carrier penetration depth of $60 \mathrm{nm}$ independent of the totally deposited laser energy. △ Less

Submitted 5 May, 2022; originally announced May 2022.

Comments: 7 pages, 2 figures

Adsorbate induced manipulation of 1D atomic nanowires: Soliton mediated degradation of long-range order in the Si(553)-Au system

Authors: B. Hafke, T. Witte, M. Horn-von Hoegen

Abstract: Deposition of Au on vicinal Si(553) surfaces results in the self-assembly of one-dimensional (1D) Au atomic wires. Charge transfer from the Au wire to the Si step edge leads to a chain of Si danglingbond orbitals with a long range ordered threefold periodicity along the steps and infinite interchain interaction perpendicular to the steps. Employing spot-profile analysis low-energy electron diracti… ▽ More Deposition of Au on vicinal Si(553) surfaces results in the self-assembly of one-dimensional (1D) Au atomic wires. Charge transfer from the Au wire to the Si step edge leads to a chain of Si danglingbond orbitals with a long range ordered threefold periodicity along the steps and infinite interchain interaction perpendicular to the steps. Employing spot-profile analysis low-energy electron diraction (SPA-LEED) we observed a broadening of spot width with time, reflecting the degradation of Si dangling bond chain and Au wire length. Adsorbates were identified as primary source for spot broadening. They force the generation of solitons and anti-solitons which immediately destroy the long-range order along and perpendicular to the steps, respectively. From the temporal evolution of broadening, we conclude that the Au wires are less reactive to adsorption than the Si dangling bond chains. △ Less

Submitted 26 November, 2019; originally announced November 2019.

Thermally-induced crossover from 2D to 1D behavior in an array of atomic wires: silicon dangling-bond solitons in Si(553)-Au

Authors: B. Hafke, C. Brand, T. Witte, B. Sothmann, M. Horn-von Hoegen, S. C. Erwin

Abstract: The self-assembly of submonolayer amounts of Au on the densely stepped Si(553) surface creates an array of closely spaced \atomic wires" separated by 1.5 nm. At low temperature, charge transfer between the terraces and the row of silicon dangling bonds at the step edges leads to a charge-ordered state within the row of dangling bonds with x3 periodicity. Interactions between the dangling bonds lea… ▽ More The self-assembly of submonolayer amounts of Au on the densely stepped Si(553) surface creates an array of closely spaced \atomic wires" separated by 1.5 nm. At low temperature, charge transfer between the terraces and the row of silicon dangling bonds at the step edges leads to a charge-ordered state within the row of dangling bonds with x3 periodicity. Interactions between the dangling bonds lead to their ordering into a fully two-dimensional (2D) array with centered registry between adjacent steps. We show that as the temperature is raised, soliton defects are created within each step edge. The concentration of solitons rises with increasing temperature and eventually destroys the 2D order by decoupling the step edges, reducing the effective dimensionality of the system to 1D. This crossover from higher to lower dimensionality is unexpected and, indeed, opposite to the behavior in other systems. △ Less

Submitted 26 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Lett. 124, 016102 (2020)

Equilibrium shape of single-layer hexagonal boron nitride islands on low-index metal substrates

Authors: Marin Petrović, Michael Horn-von Hoegen, Frank-J. Meyer zu Heringdorf

Abstract: Large, high-quality layers of hexagonal boron nitride (hBN) are a prerequisite for further advancement in scientific investigation and technological utilization of this exceptional 2D material. Here we address this demand by investigating chemical vapor deposition synthesis of hBN on an Ir(111) substrate, and focus on the substrate morphology, more specifically mono-atomic steps that are always pr… ▽ More Large, high-quality layers of hexagonal boron nitride (hBN) are a prerequisite for further advancement in scientific investigation and technological utilization of this exceptional 2D material. Here we address this demand by investigating chemical vapor deposition synthesis of hBN on an Ir(111) substrate, and focus on the substrate morphology, more specifically mono-atomic steps that are always present on all catalytic surfaces of practical use. From low-energy electron microscopy and atomic force microscopy data, we are able to set up an extended Wulff construction scheme and provide a clear elaboration of different interactions governing the equilibrium shapes of the growing hBN islands that deviate from the idealistic triangular form. Most importantly, intrinsic hBN edge energy and interaction with the iridium step edges are examined separately, revealing in such way the importance of substrate step morphology for the island structure and the overall quality of 2D materials. △ Less

Submitted 2 September, 2019; v1 submitted 27 August, 2019; originally announced August 2019.

Comments: 5 pages, 4 figures, supporting information available in a separate file

Journal ref: Scientific Reports 9:19553 (2019)

A diffraction paradox: An unusually broad diffraction background signals ideal graphene

Authors: S. Chen, M. Horn von Hoegen, P. A. Thiel, M. C. Tringides

Abstract: The realization of the unusual properties of 2-d materials requires the formation of large domains of single layer thickness, extending over the mesoscale. It is found that the formation of ideal graphene on SiC, contrary to textbook diffraction , is signaled by a strong bell-shaped-component (BSC) around the (00) and G(10), but not the SiC(10) spots.The BSC is also seen for graphene on metals, be… ▽ More The realization of the unusual properties of 2-d materials requires the formation of large domains of single layer thickness, extending over the mesoscale. It is found that the formation of ideal graphene on SiC, contrary to textbook diffraction , is signaled by a strong bell-shaped-component (BSC) around the (00) and G(10), but not the SiC(10) spots.The BSC is also seen for graphene on metals, because single layer uniform graphene with large lateral size can also be grown. It is only seen by electron diffraction and not with X-ray or He-scattering experiments. Most likely it originates from the spatial confinement of the graphene electrons within a single layer. This leads to a large spread in their wavevector, which is transferred through electron-electron interactions to the elastically scattered electrons to generate the BSC. △ Less

Submitted 9 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. B 100, 155307 (2019)

Tracking the Ultrafast Non-Equilibrium Energy Flow between Electronic and Lattice Degrees of Freedom in Crystalline Nickel

Authors: P. Maldonado, T. Chase, A. H. Reid, X. Shen, R. K. Li, K. Carva, T. Payer, M. Horn von Hoegen, K. Sokolowski-Tinten, X. J. Wang, P. M. Oppeneer, H. A. Dürr

Abstract: Femtosecond laser excitation of solid-state systems creates non-equilibrium hot electrons that cool down by transferring their energy to other degrees of freedom and ultimately to lattice vibrations of the solid. By combining ab initio calculations with ultrafast diffuse electron scattering we gain a detailed understanding of the complex non-equilibrium energy transfer between electrons and phonon… ▽ More Femtosecond laser excitation of solid-state systems creates non-equilibrium hot electrons that cool down by transferring their energy to other degrees of freedom and ultimately to lattice vibrations of the solid. By combining ab initio calculations with ultrafast diffuse electron scattering we gain a detailed understanding of the complex non-equilibrium energy transfer between electrons and phonons in laser-excited Ni metal. Our experimental results show that the wavevector resolved population dynamics of phonon modes is distinctly different throughout the Brillouin zone and are in remarkable agreement with our theoretical results. We find that zone-boundary phonon modes become occupied first. As soon as the energy in these modes becomes larger than the average electron energy a backflow of energy from lattice to electronic degrees of freedom occurs. Subsequent excitation of lower-energy phonon modes drives the thermalization of the whole system on the picosecond timescale. We determine the evolving non-equilibrium phonon occupations which we find to deviate markedly from thermal occupations. △ Less

Submitted 20 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. B 101, 100302 (2020)

Lateral heterostructures of hexagonal boron nitride and graphene: BCN alloy formation and microstructuring mechanism

Authors: Marin Petrović, Michael Horn-von Hoegen, Frank-J. Meyer zu Heringdorf

Abstract: Integration of individual two-dimensional materials into heterostructures is a crucial step which enables development of new and technologically interesting functional systems of reduced dimensionality. Here, well-defined lateral heterostructures of hexagonal boron nitride and graphene are synthesized on Ir(111) by performing sequential chemical vapor deposition from borazine and ethylene in ultra… ▽ More Integration of individual two-dimensional materials into heterostructures is a crucial step which enables development of new and technologically interesting functional systems of reduced dimensionality. Here, well-defined lateral heterostructures of hexagonal boron nitride and graphene are synthesized on Ir(111) by performing sequential chemical vapor deposition from borazine and ethylene in ultra-high vacuum. Low-energy electron microscopy (LEEM) and selected-area electron diffraction (μ-LEED) show that the heterostructures do not consist only of hexagonal boron nitride (an insulator) and graphene (a conductor), but that also a 2D alloy made up of B, C, and N atoms (a semiconductor) is formed. Composition and spatial extension of the alloy can be tuned by controlling the parameters of the synthesis. A new method for in situ fabrication of micro and nanostructures based on decomposition of hexagonal boron nitride is experimentally demonstrated and modeled analytically, which establishes a new route for production of BCN and graphene elements of various shapes. In this way, atomically-thin conducting and semiconducting components can be fabricated, serving as a basis for manufacturing more complex devices. △ Less

Submitted 11 June, 2018; originally announced June 2018.

Comments: 10 pages, 6 figures, supplementary information available

Journal ref: Applied Surface Science 455 (2018), 1086

Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)

Authors: Marin Petrović, Ulrich Hagemann, Michael Horn-von Hoegen, Frank-J. Meyer zu Heringdorf

Abstract: Large hexagonal boron nitride (hBN) single-layer islands of high crystalline quality were grown on Ir(111) via chemical vapor deposition (CVD) and have been studied with low-energy electron microscopy (LEEM). Two types of hBN islands have been observed that structurally differ in their shape and orientation with respect to iridium, where the former greatly depends on the iridium step morphology. P… ▽ More Large hexagonal boron nitride (hBN) single-layer islands of high crystalline quality were grown on Ir(111) via chemical vapor deposition (CVD) and have been studied with low-energy electron microscopy (LEEM). Two types of hBN islands have been observed that structurally differ in their shape and orientation with respect to iridium, where the former greatly depends on the iridium step morphology. Photoemission electron microscopy (PEEM) and IV-LEEM spectroscopy revealed that the two island types also exhibit different work functions and bindings to iridium, which provides an explanation for differences in their shape and growth modes. In addition, various temperatures were used for the CVD synthesis of hBN, and it was found that at temperatures higher than ~950 °C boron atoms, originating either from decomposed borazine molecules or disintegrated hBN islands, can form additional compact reconstructed regions. The presented results are important for advancement in synthesis of high-quality hBN and other boron-based layered materials, and could therefore expedite their technological implementation. △ Less

Submitted 1 June, 2017; originally announced June 2017.

Comments: 9 pages, 6 figures

Journal ref: Applied Surface Science 420 (2017), pp. 504-510

Selecting a single orientation for millimeter sized graphene sheets

Authors: R. van Gastel, A. T. N'Diaye, D. Wall, J. Coraux, C. Busse, F. -J. Meyer zu Heringdorf, N. Buckanie, M. Horn von Hoegen, T. Michely, B. Poelsema

Abstract: We have used Low Energy Electron Microscopy (LEEM) and Photo Emission Electron Microscopy (PEEM) to study and improve the quality of graphene films grown on Ir(111) using chemical vapor deposition (CVD). CVD at elevated temperature already yields graphene sheets that are uniform and of monatomic thickness. Besides domains that are aligned with respect to the substrate, other rotational variants… ▽ More We have used Low Energy Electron Microscopy (LEEM) and Photo Emission Electron Microscopy (PEEM) to study and improve the quality of graphene films grown on Ir(111) using chemical vapor deposition (CVD). CVD at elevated temperature already yields graphene sheets that are uniform and of monatomic thickness. Besides domains that are aligned with respect to the substrate, other rotational variants grow. Cyclic growth exploiting the faster growth and etch rates of the rotational variants, yields films that are 99 % composed of aligned domains. Precovering the substrate with a high density of graphene nuclei prior to CVD yields pure films of aligned domains extending over millimeters. Such films can be used to prepare cluster-graphene hybrid materials for catalysis or nanomagnetism and can potentially be combined with lift-off techniques to yield high-quality, graphene based electronic devices. △ Less

Submitted 21 July, 2009; originally announced July 2009.

In situ observation of stress relaxation in epitaxial graphene

Authors: Alpha T. N'Diaye, Raoul van Gastel, Antonio J. Martinez-Galera, Johann Coraux, Hichem Hattab, Dirk Wall, Frank-J. Meyer zu Heringdorf, Michael Horn-von Hoegen, Jose M. Gomez-Rodriguez, Bene Poelsema, Carsten Busse, Thomas Michely

Abstract: Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy we demonstrate that these defects are wrinkles in the graphene layer, i.e. stripes of partially delaminated graphene. With low energy electron microscopy (LEEM) we investigate the wrinkling phenomenon in situ. Upon temperature… ▽ More Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy we demonstrate that these defects are wrinkles in the graphene layer, i.e. stripes of partially delaminated graphene. With low energy electron microscopy (LEEM) we investigate the wrinkling phenomenon in situ. Upon temperature cycling we observe hysteresis in the appearance and disappearance of the wrinkles. Simultaneously with wrinkle formation a change in bright field imaging intensity of adjacent areas and a shift in the moire spot positions for micro diffraction of such areas takes place. The stress relieved by wrinkle formation results from the mismatch in thermal expansion coefficients of graphene and the substrate. A simple one-dimensional model taking into account the energies related to strain, delamination and bending of graphene is in qualitative agreement with our observations. △ Less

Submitted 15 September, 2009; v1 submitted 4 June, 2009; originally announced June 2009.

Comments: Supplementary information: S1: Photo electron emission microscopy and LEEM measurements of rotational domains, STM data of a delaminated bulge around a dislocation. S2: Movie with increasing brightness upon wrinkle formation as in figure 4. v2: Major revision including new experimental data