Molecular Junctions for Terahertz Switches and Detectors
Authors:
Imen Hnid,
Ali Yassin,
Imane Arbouch,
David Guérin,
Colin van Dyck,
Lionel Sanginet,
Stéphane Lenfant,
Jérôme Cornil,
Philippe Blanchard,
Dominique Vuillaume
Abstract:
Molecular electronics targets tiny devices exploiting the electronic properties of the molecular orbitals, which can be tailored and controlled by the chemical structure/conformation of the molecules. Many functional devices have been experimentally demonstrated; however, these devices were operated in the low frequency domain (mainly, dc to MHz). This represents a serious limitation for electroni…
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Molecular electronics targets tiny devices exploiting the electronic properties of the molecular orbitals, which can be tailored and controlled by the chemical structure/conformation of the molecules. Many functional devices have been experimentally demonstrated; however, these devices were operated in the low frequency domain (mainly, dc to MHz). This represents a serious limitation for electronic applications, albeit molecular devices working in the THz regime were theoretically predicted. Here, we experimentally demonstrate molecular THz switches at room temperature. The devices consist of self-assembled monolayers of molecules bearing two conjugated moieties coupled through a non-conjugated linker. These devices exhibit clear negative differential conductance behaviors (peaks in the current-voltage curves), as confirmed by ab initio simulations, which were reversibly suppressed under illumination with a 30 THz wave. We analyze how the THz switching behavior depends on the THz wave properties (power, frequency), and we benchmark that these molecular devices would outperform actual THz detectors.
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Submitted 16 February, 2024; v1 submitted 13 October, 2023;
originally announced October 2023.
Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics
Authors:
Julien Chaste,
Imen Hnid,
Lama Khalil,
Chen Si,
Alan Durnez,
Xavier Lafosse,
Meng-Qiang Zhao,
A. T. Charlie Johnson,
Shengbai Zhang,
Junhyeok Bang,
Abdelkarim Ouerghi
Abstract:
Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any e…
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Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the phase 2H-1T phase transition which imposes a 3percent directional elongation of the topological 1T phase with respect to the semiconducting 2H. We note that only a few percent 2H- 1T phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with First-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.
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Submitted 23 November, 2020;
originally announced November 2020.
