Effects of W alloying on the electronic structure, phase stability and thermoelectric power factor in epitaxial CrN thin films
Authors:
Niraj Kumar Singh,
Victor Hjort,
Sanath Kumar Honnali,
Davide Gambino,
Arnaud le Febvrier,
Ganpati Ramanath,
Björn Alling,
Per Eklund
Abstract:
CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at.% W substituting Cr, induce flat electronic bands and push the Fermi level EF into the conduction band, while retaining dispersive Cr 3d bands. These features are conducive for both high electrical conductivity σand high Seebeck coefficient…
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CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at.% W substituting Cr, induce flat electronic bands and push the Fermi level EF into the conduction band, while retaining dispersive Cr 3d bands. These features are conducive for both high electrical conductivity σand high Seebeck coefficient α, and hence the thermoelectric power factor α^2σ. To investigate this possibility, epitaxial CrWxNz films were grown on c-plane sapphire by dc-magnetron sputtering. However, even films with the lowest W concentration (x = 0.03) in our study contained metallic h-Cr2N, which is not conducive for a high α. Nevertheless, the films exhibit a sizeable power factor of α^2σ~ 4.7 x 10-4 Wm-1K-2 due to high σ~ 700 Scm-1, and a moderate α~ -25 ~{^^^^00b5}V/K. Increasing h-Cr2N fractions in the 0.03 < x \le 0.19 range monotonically increases σ, but severely diminishes αleading to two orders of magnitude decrease in α^2σ. This trend continues with x > 0.19 due to W precipitation. These findings indicate that dilute W additions below its solubility limit in CrN is important for realizing high thermoelectric power factor in CrWxNz alloy films.
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Submitted 25 June, 2024; v1 submitted 4 November, 2023;
originally announced November 2023.
Thermoelectric properties and electronic structure of Cr(Mo,V)Nx thin films studied by synchrotron and lab-based X-ray spectroscopy
Authors:
Susmita Chowdhury,
Victor Hjort,
Rui Shu,
Grzegorz Greczynski,
Arnaud le Febvrier,
Per Eklund,
Martin Magnuson
Abstract:
Chromium-based nitrides are used in hard, resilient coatings, and show promise for thermoelectric applications due to their combination of structural, thermal, and electronic properties. Here, we investigated the electronic structures and chemical bonding correlated to the thermoelectric properties of epitaxially grown chromium-based multicomponent nitride Cr(Mo,V)Nx thin films. Due to minuscule N…
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Chromium-based nitrides are used in hard, resilient coatings, and show promise for thermoelectric applications due to their combination of structural, thermal, and electronic properties. Here, we investigated the electronic structures and chemical bonding correlated to the thermoelectric properties of epitaxially grown chromium-based multicomponent nitride Cr(Mo,V)Nx thin films. Due to minuscule N vacancies, finite population of Cr 3d and N 2p states appear at the Fermi level and diminishes the band opening for Cr0.51N0.49. Incorporating holes by alloying V in N deficient CrN matrix results in enhanced thermoelectric power factor with marginal change in the charge transfer of Cr to N compared to Cr0.51N0.49. Further alloying Mo isoelectronic to Cr increases the density of states across the Fermi level due to hybridization of the (Cr, V) 3d and Mo 4d-N 2p states in Cr(Mo,V)Nx. The hybridization effect with reduced N 2p states off from stoichiometry drives the system towards metal like electrical resistivity and reduction in Seebeck coefficient compensating the overall power factor still comparable to Cr0.51N0.49. The N deficiency also depicts a critical role in reduction of the charge transfer from metal to N site. The present work envisages ways for enhancing thermoelectric properties through electronic band engineering by alloying and competing effects of N vacancies.
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Submitted 24 August, 2023; v1 submitted 21 August, 2023;
originally announced August 2023.
