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Assessment of the (010) $β$-Ga$_2$O$_3$ Surface and Substrate Specification
Authors:
Michael A. Mastro,
Charles R. Eddy, Jr.,
Marko J. Tadjer,
Jennifer K. Hite,
Jihyun Kim,
Stephen J. Pearton
Abstract:
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($β$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and processing of the (010) $β$-Ga$_2$O…
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Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($β$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and processing of the (010) $β$-Ga$_2$O$_3$ surface are known to form sub-nanometer scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a sub-nanometer-scale feature along the [001] direction. Additionally, the general crystal structure of $β$-Ga$_2$O$_3$ is presented and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.
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Submitted 8 May, 2021;
originally announced May 2021.
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Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance
Authors:
Md Shafkat Bin Hoque,
Yee Rui Koh,
Kiumars Aryana,
Eric Hoglund,
Jeffrey L. Braun,
David H. Olson,
John T. Gaskins,
Habib Ahmad,
Mirza Mohammad Mahbube Elahi,
Jennifer K. Hite,
Zayd C. Leseman,
W. Alan Doolittle,
Patrick E. Hopkins
Abstract:
Measuring the thermal conductivity of sub-surface buried substrates are of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths (TPD). Here, we experimentally and numerically investigate the TPD of recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore…
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Measuring the thermal conductivity of sub-surface buried substrates are of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths (TPD). Here, we experimentally and numerically investigate the TPD of recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore its capability for measuring the thermal properties of buried substrates. The conventional definition of the TPD does not truly represent the upper limit of how far beneath the surface SSTR can probe. For estimating the uncertainty of SSTR measurements of a buried substrate a priori, sensitivity calculations provide the best means. Thus, detailed sensitivity calculations are provided to guide future measurements. Due to the steady-state nature of SSTR, it can measure the thermal conductivity of buried substrates typically inaccessible by traditional pump-probe techniques, exemplified by measuring three control samples. We also discuss the required criteria for SSTR to isolate the thermal properties of a buried film. Our study establishes SSTR as a suitable technique for thermal characterizations of sub-surface buried substrates in typical device geometries.
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Submitted 25 February, 2021;
originally announced February 2021.
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III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
Authors:
Michael A. Mastro,
Travis J. Anderson,
Marko J. Tadjer,
Francis J. Kub,
Jennifer K. Hite,
Jihyun Kim,
Charles R. Eddy Jr
Abstract:
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emittin…
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This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emitting diode nanowires.
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Submitted 2 September, 2020;
originally announced September 2020.
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Nickel Foam as a Substrate for III-nitride Nanowire Growth
Authors:
Michael A. Mastro,
Neeraj Nepal,
Fritz Kub,
Jennifer K. Hite,
J. Kim,
Charles R. Eddy Jr
Abstract:
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane dire…
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This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
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Submitted 2 September, 2020;
originally announced September 2020.
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Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires
Authors:
Michael A. Mastro,
Hong-Youl Kim,
Jaehui Ahn,
Blake Simpkins,
Pehr Pehrsson,
Jihyun Kim,
Jennifer K. Hite,
Charles R. Eddy Jr
Abstract:
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage transition from Ohmic to space charge limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cr…
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An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage transition from Ohmic to space charge limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross-section, which creates a doublet peak in the piezoelectric induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces as well as an interaction with the opposing polarization fields at two semi-polar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on configuration of the multi-layer structure, and is not amenable to an analytical model.
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Submitted 2 September, 2020;
originally announced September 2020.
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All Epitaxial Fabrication of a Nanowire Plasmon Laser Structure
Authors:
Michael A. Mastro,
Jaime A. Freitas,
Jennifer K. Hite,
Charles R. Eddy Jr
Abstract:
An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV lumi-nescence was observed from as-grown vertically-aligned arrays as well as horizontally-aligned nanowires transferred to a transparent carrier wafer.
An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV lumi-nescence was observed from as-grown vertically-aligned arrays as well as horizontally-aligned nanowires transferred to a transparent carrier wafer.
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Submitted 2 September, 2020;
originally announced September 2020.
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Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
Authors:
M. A. Mastro,
J. K. Hite,
C. R. Eddy, Jr.,
M. J. Tadjer,
S. J. Pearton,
F. Ren,
J. Kim
Abstract:
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-…
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Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.
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Submitted 2 September, 2020;
originally announced September 2020.
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Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC
Authors:
Joseph L. Tedesco,
Glenn G. Jernigan,
James C. Culbertson,
Jennifer K. Hite,
Yang Yang,
Kevin M. Daniels,
Rachael L. Myers-Ward,
Charles R. Eddy, Jr.,
Joshua A. Robinson,
Kathleen A. Trumbull,
Maxwell T. Wetherington,
Paul M. Campbell,
D. Kurt Gaskill
Abstract:
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of th…
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Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.
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Submitted 28 July, 2010;
originally announced July 2010.
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Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Authors:
Joshua D. Caldwell,
Travis J. Anderson,
James C. Culbertson,
Glenn G. Jernigan,
Karl D. Hobart,
Fritz J. Kub,
Marko J. Tadjer,
Joseph L. Tedesco,
Jennifer K. Hite,
Michael A. Mastro,
Rachael L. Myers-Ward,
Charles R. Eddy Jr.,
Paul M. Campbell,
D. Kurt Gaskill
Abstract:
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This pr…
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In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts.
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Submitted 14 October, 2009;
originally announced October 2009.
