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Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry
Authors:
K. Korzekwa,
C. Gradl,
M. Kugler,
S. Furthmeier,
M. Griesbeck,
M. Hirmer,
D. Schuh,
W. Wegscheider,
T. Kuhn,
C. Schüller,
T. Korn,
P. Machnikowski
Abstract:
We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inve…
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We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inversion of the RSA peaks can occur for long hole spin dephasing times and tilted magnetic fields. We verify the validity of our theoretical findings by performing a series of TRFR and RSA experiments on a p-modulation doped GaAs/Al_{0.3}Ga_{0.7}As single QW and showing that our model can reproduce experimentally observed signals.
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Submitted 29 June, 2013; v1 submitted 26 June, 2013;
originally announced June 2013.
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Terahertz radiation driven chiral edge currents in graphene
Authors:
J. Karch,
C. Drexler,
P. Olbrich,
M. Fehrenbacher,
M. Hirmer,
M. M. Glazov,
S. A. Tarasenko,
E. L. Ivchenko,
B. Birkner,
J. Eroms,
D. Weiss,
R. Yakimova,
S. Lara-Avila,
S. Kubatkin,
M. Ostler,
T. Seyller,
S. D. Ganichev
Abstract:
We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which…
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We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.
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Submitted 19 July, 2011;
originally announced July 2011.
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Low-temperature photocarrier dynamics in monolayer MoS2
Authors:
T. Korn,
S. Heydrich,
M. Hirmer,
J. Schmutzler,
C. Schüller
Abstract:
The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescen…
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The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS$_2$ flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed.
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Submitted 17 June, 2011; v1 submitted 15 June, 2011;
originally announced June 2011.
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Decoherence-assisted initialization of a resident hole spin polarization in a two-dimensional hole gas
Authors:
M. Kugler,
K. Korzekwa,
P. Machnikowski,
C. Gradl,
S. Furthmeier,
M. Griesbeck,
M. Hirmer,
D. Schuh,
W. Wegscheider,
T. Kuhn,
C. Schüller,
T. Korn
Abstract:
We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin amplification, are utilized in our study. We observe that nonresonant or high power optical pum** leads to a resident hole spin polarization with opposite sign with respect to the optically oriented carriers, whi…
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We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin amplification, are utilized in our study. We observe that nonresonant or high power optical pum** leads to a resident hole spin polarization with opposite sign with respect to the optically oriented carriers, while low power resonant optical pum** only leads to a resident hole spin polarization if a sufficient in-plane magnetic field is applied. The competition between two different processes of spin orientation strongly modifies the shape of resonant spin amplification traces. Calculations of the spin dynamics in the electron--hole system are in good agreement with the experimental Kerr rotation and resonant spin amplification traces and allow us to determine the hole spin polarization within the sample after optical orientation, as well as to extract quantitative information about spin dephasing processes at various stages of the evolution.
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Submitted 19 January, 2012; v1 submitted 6 May, 2011;
originally announced May 2011.
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Optical polarization of localized hole spins in p-doped quantum wells
Authors:
M. Studer,
M. Hirmer,
D. Schuh,
W. Wegscheider,
K. Ensslin,
G. Salis
Abstract:
The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with…
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The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with opposite sign: The difference of the g factor between the localized holes and the trions, as well as the capturing process of dark excitons by the localized hole states.
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Submitted 6 April, 2011;
originally announced April 2011.
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Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures
Authors:
V. Lechner,
L. E. Golub,
F. Lomakina,
V. V. Bel'kov,
P. Olbrich,
S. Stachel,
I. Caspers,
M. Griesbeck,
M. Kugler,
M. J. Hirmer,
T. Korn,
C. Schüller,
D. Schuh,
W. Wegscheider,
S. D. Ganichev
Abstract:
We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum w…
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We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum well widths, the PGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms.
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Submitted 19 November, 2010;
originally announced November 2010.
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Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type do**
Authors:
S. Heydrich,
M. Hirmer,
C. Preis,
T. Korn,
J. Eroms,
D. Weiss,
C. Schüller
Abstract:
We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffe…
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We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band mode, accompanied by a line narrowing, while the 2D mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type do** of the nanostructured graphene.
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Submitted 15 June, 2010; v1 submitted 10 June, 2010;
originally announced June 2010.
