Showing 1–13 of 13 results for author: Hirahara, T

Bulk and surface electronic structure of Bi$_4$Te$_3$ from $GW$ calculations and photoemission experiments

Authors: Dmitrii Nabok, Murat Tas, Shotaro Kusaka, Engin Durgun, Christoph Friedrich, Gustav Bihlmayer, Stefan Blügel, Toru Hirahara, Irene Aguilera

Abstract: We present a combined theoretical and experimental study of the electronic structure of stoichiometric Bi$_4$Te$_3$, a natural superlattice of alternating Bi$_2$Te$_3$ quintuple layers and Bi bilayers. In contrast to the related semiconducting compounds Bi$_2$Te$_3$ and Bi$_1$Te$_1$, density functional theory predicts Bi$_4$Te$_3$ to be a semimetal. In this work, we compute the quasiparticle elect… ▽ More We present a combined theoretical and experimental study of the electronic structure of stoichiometric Bi$_4$Te$_3$, a natural superlattice of alternating Bi$_2$Te$_3$ quintuple layers and Bi bilayers. In contrast to the related semiconducting compounds Bi$_2$Te$_3$ and Bi$_1$Te$_1$, density functional theory predicts Bi$_4$Te$_3$ to be a semimetal. In this work, we compute the quasiparticle electronic structure of Bi$_4$Te$_3$ in the framework of the $GW$ approximation within many-body perturbation theory. The quasiparticle corrections are found to modify the dispersion of the valence and conduction bands in the vicinity of the Fermi energy, leading to the opening of a small indirect band gap. Based on the analysis of the eigenstates, Bi$_4$Te$_3$ is classified as a dual topological insulator with bulk topological invariants $\mathbb{Z}_2$ (1;111) and magnetic mirror Chern number $n_M=1$. The bulk $GW$ results are used to build a Wannier-functions based tight-binding Hamiltonian that is further applied to study the electronic properties of the (111) surface. The comparison with our angle-resolved photoemission measurements shows excellent agreement between the computed and measured surface states and indicates the dual topological nature of Bi$_4$Te$_3$. △ Less

Submitted 19 April, 2022; originally announced April 2022.

Journal ref: Phys. Rev. Materials 6, 034204 (2022)

Two-dimensional superconductivity of the Ca-intercalated graphene on SiC: vital role of the interface between monolayer graphene and the substrate

Authors: Haruko Toyama, Ryota Akiyama, Satoru Ichinokura, Mizuki Hashizume, Takushi Iimori, Yukihiro Endo, Rei Hobara, Tomohiro Matsui, Kentaro Horii, Shunsuke Sato, Toru Hirahara, Fumio Komori, Shuji Hasegawa

Abstract: Ca-intercalation has opened a way for superconductivity in graphene on SiC. However, the atomic and electronic structures being critical for superconductivity are still under discussion. We find the essential role of the interface between monolayer graphene and the SiC substrate for superconductivity. In the Ca-intercalation process, at the interface a carbon layer terminating SiC changes to graph… ▽ More Ca-intercalation has opened a way for superconductivity in graphene on SiC. However, the atomic and electronic structures being critical for superconductivity are still under discussion. We find the essential role of the interface between monolayer graphene and the SiC substrate for superconductivity. In the Ca-intercalation process, at the interface a carbon layer terminating SiC changes to graphene by Ca-termination of SiC (monolayer graphene becomes bilayer) with inducing more carriers than a free-standing model. Then, Ca is intercalated in-between graphene layers, which shows superconductivity with the updated critical temperature ($T_{C}$) of up to 5.7 K. In addition, the relation between $T_{C}$ and the normal-state conductivity is unusual, "dome-shape". These findings are beyond the simple C6CaC6 model in which s-wave BCS superconductivity is theoretically predicted. This work proposes a general picture of the intercalation-induced superconductivity in graphene on SiC, and shed the light on the potential of superconductivity induced by other intercalants. △ Less

Submitted 25 November, 2021; originally announced November 2021.

Van Hove Singularity and Lifshitz Transition in Thickness-Controlled Li-Intercalated Graphene

Authors: S. Ichinokura, M. Toyoda, M. Hashizume, K. Horii, S. Kusaka, S. Ideta, K. Tanaka, R. Shimizu, T. Hitosugi, S. Saito, T. Hirahara

Abstract: We demonstrate a new method to control the Fermi level around the van Hove singularity (VHS) in Li-intercalated graphene on the SiC substrate. By angle-resolved photoemission spectroscopy, we observed a clear Lifshitz transition in the vicinity of the VHS by increasing the graphene thickness. This behavior is unexpected in a free-standing Li-intercalated graphene model. The calculation including t… ▽ More We demonstrate a new method to control the Fermi level around the van Hove singularity (VHS) in Li-intercalated graphene on the SiC substrate. By angle-resolved photoemission spectroscopy, we observed a clear Lifshitz transition in the vicinity of the VHS by increasing the graphene thickness. This behavior is unexpected in a free-standing Li-intercalated graphene model. The calculation including the substrate suggests that the surface state stabilizes the Fermi level around the VHS of the Dirac bands via hybridization. In addition, we found that a sizable Schottky barrier is formed between graphene and the substrate. These properties allow us to explore the electronic phase diagram around the VHS by controlling the thickness and electric field in the device condition. △ Less

Submitted 12 August, 2021; originally announced August 2021.

Soft-magnetic skyrmions induced by surface-state coupling in an intrinsic ferromagnetic topological insulator sandwich structure

Authors: Takuya Takashiro, Ryota Akiyama, Ivan A. Kibirev, Andrey V. Matetskiy, Ryosuke Nakanishi, Shunsuke Sato, Takuro Fukasawa, Taisuke Sasaki, Haruko Toyama, Kota L. Hiwatari, Andrey V. Zotov, Alexander A. Saranin, Toru Hirahara, Shuji Hasegawa

Abstract: A magnetic skyrmion induced on a ferromagnetic topological insulator (TI) is a real-space manifestation of the chiral spin texture in the momentum space, and can be a carrier for information processing by manipulating it in tailored structures. Here, we fabricate a sandwich structure containing two layers of a self-assembled ferromagnetic septuple-layer TI, Mn(Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{4}$ (Mn… ▽ More A magnetic skyrmion induced on a ferromagnetic topological insulator (TI) is a real-space manifestation of the chiral spin texture in the momentum space, and can be a carrier for information processing by manipulating it in tailored structures. Here, we fabricate a sandwich structure containing two layers of a self-assembled ferromagnetic septuple-layer TI, Mn(Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{4}$ (MnBST), separated by quintuple layers of TI, (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ (BST), and observe skyrmions through the topological Hall effect in an intrinsic magnetic topological insulator for the first time. The thickness of BST spacer layer is crucial in controlling the coupling between the gapped topological surface states in the two MnBST layers to stabilize the skyrmion formation. The homogeneous, highly-ordered arrangement of the Mn atoms in the septuple-layer MnBST leads to a strong exchange interaction therein, which makes the skyrmions "soft magnetic". This would open an avenue towards a topologically robust rewritable magnetic memory. △ Less

Submitted 28 May, 2021; originally announced May 2021.

Magnetotransport study of the mini-Dirac cone in AB-stacked four- to six-layer graphene under perpendicular electric field

Authors: Kota Horii, Tomoaki Nakasuga, Taiki Hirahara, Shingo Tajima, Ryoya Ebisuoka, Kenji Watanabe, Takashi Taniguchi, Ryuta Yagi

Abstract: Landau levels of AB-stacked four- to six-layer graphene were studied experimentally in the presence of a perpendicular electric field. The Landau levels at a low magnetic field showed a characteristic structure that originated from the mini-Dirac cones created by the perpendicular electric fields. Six-fold or twelve-fold degenerate Landau levels arising from the mini-Dirac cones were observed in t… ▽ More Landau levels of AB-stacked four- to six-layer graphene were studied experimentally in the presence of a perpendicular electric field. The Landau levels at a low magnetic field showed a characteristic structure that originated from the mini-Dirac cones created by the perpendicular electric fields. Six-fold or twelve-fold degenerate Landau levels arising from the mini-Dirac cones were observed in the vicinity of the charge neutrality point as a radial structure in a plot of their Landau fan diagrams. The structure of four-layer graphene had approximate electron-hole symmetry near the charge neutrality point, while the five- and six-layer graphene showed asymmetry. Numerical calculations of the dispersion relation and Landau level spectra indicated that trigonal war** played an essential role in forming the experimentally observed Landau level structure in low magnetic fields. In high magnetic fields, trigonal war** becomes less significant and the Landau level spectra become simpler, approaching those that were calculated without considering trigonal war**. The appearance of mini-Dirac cones in a perpendicular electric field would be a common feature of AB-stacked multilayer graphene. △ Less

Submitted 17 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. B 100, 245420 (2019)

Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers

Authors: Tomoaki Nakasuga, Taiki Hirahara, Kota Horii, Ryoya Ebisuoka, Shingo Tajima, Kenji Watanabe, Takashi Taniguchi, Ryuta Yagi

Abstract: The intrinsic resistance peak (ridge) structures were recently found to appear in the carrier density dependence plot of the resistance of the AB-stacked multilayer graphene with even numbers of layers.The ridges are due to topological changes in the Fermi surface. Here, these structures were studied in AB-stacked multilayer graphene with odd numbers of layers (5 and 7 layers) by performing experi… ▽ More The intrinsic resistance peak (ridge) structures were recently found to appear in the carrier density dependence plot of the resistance of the AB-stacked multilayer graphene with even numbers of layers.The ridges are due to topological changes in the Fermi surface. Here, these structures were studied in AB-stacked multilayer graphene with odd numbers of layers (5 and 7 layers) by performing experiments using encapsulated high-quality graphene samples equipped with top and bottom gate electrodes.The intrinsic resistance peaks that appeared on maps plotted with respect to the carrier density and perpendicular electric field showed particular patterns depending on graphene's crystallographic structure, and were qualitatively different from those of graphene with even numbers of layers. Numerical calculations of the dispersion relation and semi-classical resistivity using information based on the Landau level structure determined by the magnetoresistance oscillations, revealed that the difference stemmed from the even-odd layer number effect on the electronic band structure. △ Less

Submitted 30 May, 2019; v1 submitted 28 May, 2019; originally announced May 2019.

Journal ref: Phys. Rev. B 101, 035419 (2020)

Ballistic transport experiment detects Fermi surface anisotropy of graphene

Authors: Takushi Oka, Shingo Tajima, Ryoya Ebisuoka, Taiki Hirahara, Kenji Watanabe, Takashi Taniguchi, Ryuta Yagi

Abstract: Monolayer graphene and bilayer graphene have strikingly different properties. One such difference is the shape of the Fermi surface. Although anisotropic band structures can be detected in optical measurements, they have so far been difficult to detect in transport experiments on twodimensional materials. Here we describe a ballistic transport experiment using high-quality graphene that revealed F… ▽ More Monolayer graphene and bilayer graphene have strikingly different properties. One such difference is the shape of the Fermi surface. Although anisotropic band structures can be detected in optical measurements, they have so far been difficult to detect in transport experiments on twodimensional materials. Here we describe a ballistic transport experiment using high-quality graphene that revealed Fermi surface anisotropy in the magnetoresistance. The shape of the Fermi surface is closely related with the cyclotron orbit in real space. Electron trajectories in samples with triangular lattices of holes depend on the anisotropy of the Fermi surface. We found that this results in the magnetoresistance which are dependent on crystallographic orientation of the antidot lattice, which indicates the anisotropic Fermi surface of bilayer graphene which is a trigonally-warped circle in shape. While in monolayer, shape of magnetoresistance was approximately independent of the orientation of antidot lattice, which indicates that the Fermi surface is a circle in shape. The ballistic transport experiment is a new method of detecting anisotropic electronic band structures in two-dimensional electron systems. △ Less

Submitted 17 January, 2019; originally announced January 2019.

Low energy band structure in Bernal stacked hexlayer graphene: Landau fan diagram and resistance ridge

Authors: Tomoaki Nakasuga, Shingo Tajima, Taiki Hirahara, Ryoya Ebisuoka, Takushi Oka, Kenji Watanabe, Takashi Taniguchi, Ryuta Yagi

Abstract: The low-energy band structure of Bernal-stacked hexlayer graphene was investigated by the measuring transport properties of high-mobility graphene samples equipped with a top and a bottom gate electrode at low temperature and in a magnetic field. By analyzing the Landau fan diagram, it was found that the hexlayer graphene consisted of three different bilayer-like bands that overlap and form a semi… ▽ More The low-energy band structure of Bernal-stacked hexlayer graphene was investigated by the measuring transport properties of high-mobility graphene samples equipped with a top and a bottom gate electrode at low temperature and in a magnetic field. By analyzing the Landau fan diagram, it was found that the hexlayer graphene consisted of three different bilayer-like bands that overlap and form a semimetal. The electronic band structure was significantly influenced by the perpendicular electric field generated by the top and bottom gate voltages. The Not fan diagram shows splitting of zero-mode Landau levels, while also the top and bottom gate voltage dependence of the resistivity at zero magnetic field shows ridge-like structure, similar to the one recently found in tetralayer graphene. It is shown that the ridge structure originates from the band structure of the Bernalstacked hexlayer graphene. Most of the ridges originate from the bottoms of the bilayer-like bands, and a few ridges originate from the energy gap structures which locally close due to trigonal war** and expected to form mini-Dirac cones. △ Less

Submitted 23 January, 2019; v1 submitted 3 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 99, 085404 (2019)

Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence

Authors: Taiki Hirahara, Ryoya Ebisuoka, Takushi Oka, Tomoaki Nakasuga, Shingo Tajima, Kenji Watanabe, Takashi Taniguchi, Ryuta Yagi

Abstract: Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been studied in 1-3 layer graphene in a number of efforts to control the band gap to obtain a large on-off ratio. On the other hand, the transport property of multil… ▽ More Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been studied in 1-3 layer graphene in a number of efforts to control the band gap to obtain a large on-off ratio. On the other hand, the transport property of multilayer graphene with more than three layers is less well understood. Here we show a new aspect of multilayer graphene. We found that four-layer graphene shows intrinsic peak structures in the gate voltage dependence of its resistance at zero magnetic field. Measurement of quantum oscillations in magnetic field confirmed that the peaks originate from the specific band structure of graphene and appear at the carrier density for the bottoms of conduction bands and valence bands. The intrinsic peak structures should generally be observed in AB-stacked multilayer graphene. The present results would be significant for understanding the physics of graphene and making graphene FET devices. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene

Authors: Ryuta Yagi, Taiki Hirahara, Ryoya Ebisuoka, Tomoaki Nakasuga, Shingo Tajima, Kenji Watanabe, Takashi Taniguchi

Abstract: How atoms acquire three-dimensional bulk character is one of the fundamental questions in materials science. Before addressing this question, how atomic layers become a bulk crystal might give a hint to the answer. While atomically thin films have been studied in a limited range of materials, a recent discovery showing how to mechanically exfoliate bulk crystals has opened up the field to study th… ▽ More How atoms acquire three-dimensional bulk character is one of the fundamental questions in materials science. Before addressing this question, how atomic layers become a bulk crystal might give a hint to the answer. While atomically thin films have been studied in a limited range of materials, a recent discovery showing how to mechanically exfoliate bulk crystals has opened up the field to study the atomic layers of various materials. Here, we show systematic variation in the band structure of high mobility graphene with one to seven layers by measuring the quantum oscillation of magnetoresistance. The Landau fan diagram showed distinct structures that reflected differences in the band structure, as if they were finger prints of multilayer graphene. In particular, an even-odd layer number effect was clearly observed, with the number of bands increasing by one for every two layers and a Dirac cone observed only for an odd number of layers. The electronic structure is significantly influenced by the potential energy arising from carrier screening associated with a gate electric field. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer

Authors: Toru Hirahara, Sergey V. Eremeev, Tetsuroh Shirasawa, Yuma Okuyama, Takayuki Kubo, Ryosuke Nakanishi, Ryota Akiyama, Akari Takayama, Tetsuya Hajiri, Shin-ichiro Ideta, Masaharu Matsunami, Kazuki Sumida, Koji Miyamoto, Yasumasa Takagi, Kiyohisa Tanaka, Taichi Okuda, Toshihiko Yokoyama, Shin-ichi Kimura, Shuji Hasegawa, Evgueni V. Chulkov

Abstract: Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on do** magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the… ▽ More Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on do** magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBi2Se4 /Bi2Se3 heterostructure which was fabricated by self-assembling a MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the co-deposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBi2Se4 /Bi2Se3 heterostructure shows ferromagnetism up to room temperature and a clear Dirac-cone gap opening of ~100 meV without any other significant changes in the rest of the band structure. It can be considered as a result of the direct interaction of the surface Dirac cone and the magnetic layer rather than a magnetic proximity effect. This spontaneously formed self-assembled heterostructure with a massive Dirac spectrum, characterized by a nontrivial Chern number C = -1, has a potential to realize the QAHE at significantly higher temperatures than reported up to now and can serve as a platform for develo** future " topotronics" devices. △ Less

Submitted 6 September, 2017; originally announced September 2017.

Comments: 13pages, 4 figures

Journal ref: Nano Letters 17, 3493 (2017)

Direct map** of the spin-filtered surface bands of a three-dimensional quantum spin Hall insulator

Authors: Akinori Nishide, Alexey A. Taskin, Yasuo Takeichi, Taichi Okuda, Akito Kakizaki, Toru Hirahara, Kan Nakatsuji, Fumio Komori, Yoichi Ando, Iwao Matsuda

Abstract: Spin-polarized band structure of the three-dimensional quantum spin Hall insulator $\rm Bi_{1-x}Sb_{x}$ (x=0.12-0.13) was fully elucidated by spin-polarized angle-resolved photoemission spectroscopy using a high-yield spin polarimeter equipped with a high-resolution electron spectrometer. Between the two time-reversal-invariant points, $\bar{\varGamma}$ and $\bar{M}$, of the (111) surface Brillo… ▽ More Spin-polarized band structure of the three-dimensional quantum spin Hall insulator $\rm Bi_{1-x}Sb_{x}$ (x=0.12-0.13) was fully elucidated by spin-polarized angle-resolved photoemission spectroscopy using a high-yield spin polarimeter equipped with a high-resolution electron spectrometer. Between the two time-reversal-invariant points, $\bar{\varGamma}$ and $\bar{M}$, of the (111) surface Brillouin zone, a spin-up band ($Σ_3$ band) was found to cross the Fermi energy only once, providing unambiguous evidence for the strong topological insulator phase. The observed spin-polarized band dispersions determine the "mirror chirality" to be -1, which agrees with the theoretical prediction based on first-principles calculations. △ Less

Submitted 13 February, 2009; originally announced February 2009.

Journal ref: Physical Review B 81, 041309(R) (2010)

Large positive magnetic susceptibility of nanotube torus

Authors: Ryo Tamura, Mitsuhiro Ikuta, Toru Hirahara, Masaru Tsukada

Abstract: We calculate the magnetic moment caused by the persistent currents in polygonal carbon nanotube tori by the tight binding model. The polygonal CNT tori are formed by introducing heptagonal and pentagonal defects along the inner hole and outer fringe, respectively. We found a new type of large paramagnetic persistent current caused by the semi-metallic band structures of the periodic CNT junction… ▽ More We calculate the magnetic moment caused by the persistent currents in polygonal carbon nanotube tori by the tight binding model. The polygonal CNT tori are formed by introducing heptagonal and pentagonal defects along the inner hole and outer fringe, respectively. We found a new type of large paramagnetic persistent current caused by the semi-metallic band structures of the periodic CNT junction. It is contrasted with the persistent current originated from the metallic band structure. In spite of diamagnetism of the graphite, this paramagnetism is caused by not only the magnetic flux in the inner hole (AB flux) but also the magnetic flux directly penetrating the graphite plane (direct flux). This magnetic moment is close to that calculated with only Aharonov Bohm effect where the direct flux is included in the AB flux. △ Less

Submitted 7 October, 2004; v1 submitted 29 July, 2004; originally announced July 2004.

Comments: RevTeX, uses epsf.sty, 7 figures