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Laser driven miniature diamond implant for wireless retinal prostheses
Authors:
Arman Ahnood,
Ross Cheriton,
Anne Bruneau,
James A. Belcourt,
Jean Pierre Ndabakuranye,
William Lemaire,
Rob Hilkes,
Réjean Fontaine,
John P. D. Cook,
Karin Hinzer,
Steven Prawer
Abstract:
The design and benchtop operation of a wireless miniature epiretinal stimulator implant is reported. The implant is optically powered and controlled using safe illumination at near-infrared wavelengths. An application-specific integrated circuit (ASIC) hosting a digital control unit is used to control the implant's electrodes. The ASIC is powered using an advanced photovoltaic (PV) cell and progra…
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The design and benchtop operation of a wireless miniature epiretinal stimulator implant is reported. The implant is optically powered and controlled using safe illumination at near-infrared wavelengths. An application-specific integrated circuit (ASIC) hosting a digital control unit is used to control the implant's electrodes. The ASIC is powered using an advanced photovoltaic (PV) cell and programmed using a single photodiode. Diamond packaging technology is utilized to achieve high-density integration of the implant optoelectronic circuitry, as well as individual connections between a stimulator chip and 256 electrodes, within a 4.6 mm x 3.7 mm x 0.9 mm implant package. An ultrahigh efficiency PV cell with a monochromatic power conversion efficiency of 55% is used to power the implant. On-board photodetection circuity with a bandwidth of 3.7 MHz is used for forward data telemetry of stimulation parameters. In comparison to implants which utilize inductively coupled coils, laser power delivery enables a high degree of miniaturization and lower surgical complexity. The device presented combines the benefits of implant miniaturization and a flexible stimulation strategy provided by a dedicated stimulator chip. This development provides a route to fully wireless miniaturized minimally invasive implants with sophisticated functionalities.
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Submitted 20 June, 2024;
originally announced July 2024.
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A general illumination method to predict bifacial photovoltaic system performance
Authors:
Erin M. Tonita,
Christopher E. Valdivia,
Annie C. J. Russell,
Michael Martinez-Szewczyk,
Mariana I. Bertoni,
Karin Hinzer
Abstract:
Bifacial photovoltaic technologies are estimated to supply >16% of global energy demand by 2050 to achieve net-zero greenhouse gas emissions. However, the current IEC bifacial measurement standard (IEC 60904-1-2) does not provide a pathway to account for the critical effects of spectral or broadband albedo on the rear-side irradiance, with in-lab characterization of bifacial devices limited by ove…
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Bifacial photovoltaic technologies are estimated to supply >16% of global energy demand by 2050 to achieve net-zero greenhouse gas emissions. However, the current IEC bifacial measurement standard (IEC 60904-1-2) does not provide a pathway to account for the critical effects of spectral or broadband albedo on the rear-side irradiance, with in-lab characterization of bifacial devices limited by overestimation of rear incident irradiance, neglecting spectral albedo effects on the rear, or both. As a result, prior reports have limited applicability to the diverse landscapes of bifacial photovoltaic deployments. In this paper, we identify a general bifacial illumination method which accounts for spectral albedo while representing realistic system operating conditions, referred to as the scaled rear irradiance (SRI) method. We describe how the SRI method extends the IEC standard, facilitating indoor testing of cell or module performance under varied albedo with standard solar simulator set-ups. This enables improved comparisons of bifacial technologies, application-specific optimization, and the standardization of bifacial module power ratings.
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Submitted 23 January, 2023;
originally announced February 2023.
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Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells
Authors:
Ross Cheriton,
Sharif M. Sadaf,
Luc Robichaud,
Jacob J. Krich,
Zetian Mi,
Karin Hinzer
Abstract:
Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use cost-prohibitive substrates. Here we demonstrate a material system for intermediate band solar cells using InGaN/GaN quantum-dot-in-nanowire heterostructures grown dir…
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Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use cost-prohibitive substrates. Here we demonstrate a material system for intermediate band solar cells using InGaN/GaN quantum-dot-in-nanowire heterostructures grown directly on silicon to provide a lower cost, large-bandgap intermediate band solar cell platform. We demonstrate sequential two-photon current generation with sub-bandgap photons, the hallmark of intermediate band solar cell operation, through vertically stacked quantum dots in the nanowires. Near-infrared light biasing with an 850 nm laser intensity up to 200 W/cm2 increases the photocurrent above and below the bandgap by up to 19% at 78 K, and 44% at room temperature. The nanostructured III-nitride strategy provides a route towards realistic room temperature intermediate band solar cells while leveraging the cost benefits of silicon substrates.
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Submitted 14 July, 2020;
originally announced July 2020.
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Cascade circuit architecture for RF-photonic frequency multiplication with minimum RF energy
Authors:
Mehedi Hasan,
Karin Hinzer,
Trevor Hall
Abstract:
A general RF-photonic circuit design for implementing frequency multiplication is proposed. The circuit consists of N cascaded differentially-driven Mach-Zehnder modulators biased at the minimum transmission point with a progressive RF phase shift of 180/N applied to each stage. The frequency multiplication factor obtained is 2N. The novelty of the design is the reduced input RF energy required in…
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A general RF-photonic circuit design for implementing frequency multiplication is proposed. The circuit consists of N cascaded differentially-driven Mach-Zehnder modulators biased at the minimum transmission point with a progressive RF phase shift of 180/N applied to each stage. The frequency multiplication factor obtained is 2N. The novelty of the design is the reduced input RF energy required in comparison to the functionally equivalent parallel MZM configuration. Using transfer matrix method, a N=3 architecture is modeled to obtain frequency sextupling. An industry standard simulation tool is used to verify the architectural concepts and analysis. The proposed design requires no optical or electrical filtering nor careful adjustment of the modulation index for correct operation. In addition, the overall intrinsic conversion efficiency of the N=3 cascade circuit is improved by 5 dB over a parallel MZM circuit. Finite MZM extinction and/or phase errors and power imbalances in the electric drive signals are also taken into consideration and their impact on overall performance investigated. The circuit can be integrated in any material platform that offers electro-optic modulators.
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Submitted 18 April, 2018;
originally announced April 2018.
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Optimizations of GaAs Nanowire Solar Cells
Authors:
Anna H. Trojnar,
Christopher E. Valdivia,
Ray R. LaPierre,
Karin Hinzer,
Jacob J. Krich
Abstract:
The efficiency of GaAs nanowire solar cells can be significantly improved without any new processing steps or material requirements. We report coupled optoelectronic simulations of a GaAs nanowire (NW) solar cell with vertical p-i-n junction and high band gap AlInP passivating shell. Our frequency-dependent model facilitates calculation of quantum efficiency for the first time in NW solar cells. F…
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The efficiency of GaAs nanowire solar cells can be significantly improved without any new processing steps or material requirements. We report coupled optoelectronic simulations of a GaAs nanowire (NW) solar cell with vertical p-i-n junction and high band gap AlInP passivating shell. Our frequency-dependent model facilitates calculation of quantum efficiency for the first time in NW solar cells. For passivated NWs, we find that short-wavelength photons can be most effectively harnessed by using a thin emitter while long-wavelength photons are best utilized by extending the intrinsic region to the nanowire/substrate interface, and using the substrate as a base. These two easily implemented changes, coupled with the increase of NW height to 3.5 um with realistic surface recombination in the presence of a passivation shell, result in a NW solar cell with greater than 19% efficiency.
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Submitted 14 May, 2016;
originally announced May 2016.
