-
Ultrashort spin-orbit torque generated by femtosecond laser pulses
Authors:
T. Janda,
T. Ostatnicky,
P. Nemec,
E. Schmoranzerova,
R. Campion,
V. Hills,
V. Novak,
Z. Soban,
J. Wunderlich
Abstract:
To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed…
▽ More
To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed is limited by the Larmor precession frequency. Understanding the magnetization precession dynamics induced by spin-orbit torques (SOTs) is therefore of great importance. Here we demonstrate generation of ultrashort SOT pulses that excite Larmor precession at an epitaxial Fe/GaAs interface by converting femtosecond laser pulses into high-amplitude current pulses in an electrically biased p-i-n photodiode. We control the polarity, amplitude, and duration of the current pulses and, most importantly, also their propagation direction with respect to the crystal orientation. The SOT origin of the excited Larmor precession was revealed by a detailed analysis of the precession phase and amplitude at different experimental conditions.
△ Less
Submitted 25 August, 2022;
originally announced August 2022.
-
Molecular beam epitaxy of CuMnAs
Authors:
Filip Krizek,
Zdeněk Kašpar,
Aliaksei Vetushka,
Dominik Kriegner,
Elisabetta M. Fiordaliso,
Jan Michalicka,
Ondřej Man,
Jan Zubáč,
Martin Brajer,
Victoria A. Hills,
Kevin W. Edmonds,
Peter Wadley,
Richard P. Campion,
Kamil Olejník,
Tomáš Jungwirth,
Vít Novák
Abstract:
We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si subs…
▽ More
We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.
△ Less
Submitted 5 November, 2019;
originally announced November 2019.
-
Optical determination of the Neel vector in a CuMnAs thin-film antiferromagnet
Authors:
V. Saidl,
P. Nemec,
P. Wadley,
V. Hills,
R. P. Campion,
V. Novak,
K. W. Edmonds,
F. Maccherozzi,
S. S. Dhesi,
B. L. Gallagher,
F. Trojanek,
J. Kunes,
J. Zelezny,
P. Maly,
T. Jungwirth
Abstract:
Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find u…
▽ More
Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets notoriously difficult to study by common magnetometers or magnetic resonance techniques. In this paper we demonstrate the experimental determination of the Neel vector in a thin film of antiferromagnetic CuMnAs which is the prominent material used in the first realization of antiferromagnetic memory chips. We employ a femtosecond pump-probe magneto-optical experiment based on magnetic linear dichroism. This table-top optical method is considerably more accessible than the traditionally employed large scale facility techniques like neutron diffraction and X-ray magnetic dichroism measurements. This optical technique allows an unambiguous direct determination of the Neel vector orientation in thin antiferromagnetic films utilized in devices directly from measured data without fitting to a theoretical model.
△ Less
Submitted 5 August, 2016;
originally announced August 2016.
-
Imaging current-induced switching of antiferromagnetic domains in CuMnAs
Authors:
M. J. Grzybowski,
P. Wadley,
K. W. Edmonds,
R. Beardsley,
V. Hills,
R. P. Campion,
B. L. Gallagher,
J. S. Chauhan,
V. Novak,
T. Jungwirth,
F. Maccherozzi,
S. S. Dhesi
Abstract:
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic and applied spintronics research. Using x-ray magnetic linear dichroism microscopy, we show here that staggered effective fields generated by electrical current…
▽ More
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic and applied spintronics research. Using x-ray magnetic linear dichroism microscopy, we show here that staggered effective fields generated by electrical current can induce reproducible and reversible modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film. The current-induced domain switching is inhomogeneous at the submicron level. A clear correlation between the average domain orientation and the anisotropy of the electrical resistance is demonstrated.
△ Less
Submitted 1 February, 2017; v1 submitted 28 July, 2016;
originally announced July 2016.
-
Electrical switching of an antiferromagnet
Authors:
Peter Wadley,
Bryn Howells,
Jakub Zelezny,
Carl Andrews,
Victoria Hills,
Richard P. Campion,
Vit Novak,
Frank Freimuth,
Yuriy Mokrousov,
Andrew W. Rushforth,
Kevin W. Edmonds,
Bryan L. Gallagher,
Tomas Jungwirth
Abstract:
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the ke…
▽ More
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the key which, as we show here, allows us to control antiferromagnets by electrical means analogous to those which paved the way to the development of ferromagnetic spintronics applications. The key noted by Neel is the equivalence of antiferromagnets and ferromagnets for effects that are an even function of the magnetic moment. Based on even-in-moment relativistic transport phenomena, we demonstrate room-temperature electrical switching between two stable configurations combined with electrical read-out in antiferromagnetic CuMnAs thin film devices. Our magnetic memory is insensitive to and produces no magnetic field perturbations which illustrates the unique merits of antiferromagnets for spintronics.
△ Less
Submitted 20 July, 2015; v1 submitted 12 March, 2015;
originally announced March 2015.
