Showing 1–50 of 65 results for author: Hilgenkamp, H

Imaging the suppression of ferromagnetism in LaMnO$_3$ by metallic overlayers

Authors: Bart Folkers, Thies Jansen, Thijs J. Roskamp, Pim Reith, André Timmermans, Daen Jannis, Nicolas Gauquelin, Johan Verbeeck, Hans Hilgenkamp, Carlos M. M. Rosário

Abstract: LaMnO$_3$ (LMO) thin films epitaxially grown on SrTiO$_3$ (STO) usually exhibit ferromagnetism above a critical layer thickness. We report the use of scanning SQUID microscopy (SSM) to study the suppression of the ferromagnetism in STO/LMO/metal structures. By partially covering the LMO surface with a metallic layer, both covered and uncovered LMO regions can be studied simultaneously. While Au do… ▽ More LaMnO$_3$ (LMO) thin films epitaxially grown on SrTiO$_3$ (STO) usually exhibit ferromagnetism above a critical layer thickness. We report the use of scanning SQUID microscopy (SSM) to study the suppression of the ferromagnetism in STO/LMO/metal structures. By partially covering the LMO surface with a metallic layer, both covered and uncovered LMO regions can be studied simultaneously. While Au does not significantly influence the ferromagnetic order of the underlying LMO film, a thin Ti layer induces a strong suppression of the ferromagnetism, over tens of nanometers, which increases with time on a timescale of days. Detailed EELS analysis of the Ti-LaMnO$_3$ interface reveals \textcolor{black}{the presence of Mn$^{2+}$ and} an evolution of the Ti valence state from Ti$^0$ to Ti$^{4+}$ over approximately 5 nanometers. Furthermore, we demonstrate that by patterning Ti/Au overlayers, we can locally suppress the ferromagnetism and define ferromagnetic structures down to sub-micrometer scales. △ Less

Submitted 21 May, 2024; v1 submitted 9 October, 2023; originally announced October 2023.

Journal ref: Phys. Rev. Materials 8, 054408,13 May 2024

Beyond domain alignment: Revealing the effect of intrinsic magnetic order on electrochemical water splitting

Authors: Emma van der Minne, Lucas Korol, Lidewij M. A. Krakers, Michael Verhage, Carlos M. M. Rosário, Thijs J. Roskamp, Raymond J. Spiteri, Chiara Biz, Mauro Fianchini, Guus Rijnders, Kees Flipse, Jose Gracia, Guido Mul, Hans Hilgenkamp, Robert J. Green, Gertjan Koster, Christoph Baeumer

Abstract: To reach a long term viable green hydrogen economy, rational design of active oxygen evolution reaction (OER) catalysts is critical. An important hurdle in this reaction originates from the fact that the reactants are singlet molecules, whereas the oxygen molecule has a triplet ground state with parallel spin alignment, implying that magnetic order in the catalyst is essential. Accordingly, multip… ▽ More To reach a long term viable green hydrogen economy, rational design of active oxygen evolution reaction (OER) catalysts is critical. An important hurdle in this reaction originates from the fact that the reactants are singlet molecules, whereas the oxygen molecule has a triplet ground state with parallel spin alignment, implying that magnetic order in the catalyst is essential. Accordingly, multiple experimentalists reported a positive effect of external magnetic fields on OER activity of ferromagnetic catalysts. However, it remains a challenge to investigate the influence of the intrinsic magnetic order on catalytic activity. Here, we tuned the intrinsic magnetic order of epitaxial La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ thin film model catalysts from ferro- to paramagnetic by changing the temperature in-situ during water electrolysis. Using this strategy, we show that ferromagnetic ordering below the Curie temperature enhances OER activity. Moreover, we show a slight current density enhancement upon application of an external magnetic field and find that the dependence of magnetic field direction correlates with the magnetic anisotropy in the catalyst film. Our work thus suggests that both the intrinsic magnetic order in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ films and magnetic domain alignment increase their catalytic activity. We observe no long-range magnetic order at the catalytic surface, implying that the OER enhancement is connected to the magnetic order of the bulk catalyst. Combining the effects found with existing literature, we propose a unifying picture for the spin-polarized enhancement in magnetic oxide catalysts. △ Less

Submitted 31 August, 2023; originally announced August 2023.

Comments: The following article will be submitted to Applied Physics Reviews. Main text (incl. references) 19 pages, 8 figures. Supplementary text 9 pages, 13 figures

Multibridge VO2-Based Resistive Switching Devices in a Two-Terminal Configuration

Authors: Xing Gao, Thijs J. Roskamp, Timm Swoboda, Carlos M. M. Rosario, Sander Smink, Miguel Munoz Rojo, Hans Hilgenkamp

Abstract: Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like structures. We show here that by incorporating multiple, parallel VO2 bridges in a single two-terminal device, a wider range of possible characteristics can be o… ▽ More Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like structures. We show here that by incorporating multiple, parallel VO2 bridges in a single two-terminal device, a wider range of possible characteristics can be obtained, including a manifold of addressable resistance states. Different device configurations are studied, in which the number of bridges, the bridge dimensions and the interbridge distances are varied. The switching characteristics of the multibridge devices are influenced by the thermal crosstalk between the bridges. Scanning Thermal Microscopy has been used to image the current distributions at various voltage/current bias conditions. This work presents a route to realize devices exhibiting highly non-linear, multistate current-voltage characteristics, with potential applications in e.g., tunable electronic components and novel, neuromorphic information processing circuitry. △ Less

Submitted 9 May, 2023; originally announced May 2023.

Comments: 17 pages and 6 figures for the main text

Journal ref: Adv. Electron. Mater. 2023, 2300304

Near-field imaging of domain switching in in-operando VO$_{2}$ devices

Authors: Sergio Salvía Fernández, Xing Gao, Silvia Cassanelli, Stephan Bron, Hans Hilgenkamp, Erik van Heumen

Abstract: Experimental insight in the nanoscale dynamics underlying switching in novel memristive devices is limited owing to the scarcity of techniques that can probe the electronic structure of these devices. Scattering scanning near-field optical microscopy is a relatively novel approach to probe the optical response of materials with a spatial resolution well below the diffraction limit. We use this non… ▽ More Experimental insight in the nanoscale dynamics underlying switching in novel memristive devices is limited owing to the scarcity of techniques that can probe the electronic structure of these devices. Scattering scanning near-field optical microscopy is a relatively novel approach to probe the optical response of materials with a spatial resolution well below the diffraction limit. We use this non-invasive tool to demonstrate that it provides detailed information on the origin and memory behaviour of ultra-thin films of vanadium dioxide. Simultaneously recorded $I(V)$ characteristics and near-field maps show that discontinuities in the I(V) characteristics arise from the sudden switching of insulating domains to metallic domains. At the threshold voltage, the domains form a continuous current path. The metallic domains persist once the bias voltage is removed, but narrow monoclinic regions appear around the domain boundaries. The key advantage of our approach is that it provides detailed information on the electronic structure at length scales raging from tens of nanometers up to tens of microns and is easily applied under \textit{in operando} conditions. △ Less

Submitted 12 March, 2023; originally announced March 2023.

Comments: 5 pages, 3 figures

Benchmarking energy consumption and latency for neuromorphic computing in condensed matter and particle physics

Authors: Dominique J. Kösters, Bryan A. Kortman, Irem Boybat, Elena Ferro, Sagar Dolas, Roberto de Austri, Johan Kwisthout, Hans Hilgenkamp, Theo Rasing, Heike Riel, Abu Sebastian, Sascha Caron, Johan H. Mentink

Abstract: The massive use of artificial neural networks (ANNs), increasingly popular in many areas of scientific computing, rapidly increases the energy consumption of modern high-performance computing systems. An appealing and possibly more sustainable alternative is provided by novel neuromorphic paradigms, which directly implement ANNs in hardware. However, little is known about the actual benefits of ru… ▽ More The massive use of artificial neural networks (ANNs), increasingly popular in many areas of scientific computing, rapidly increases the energy consumption of modern high-performance computing systems. An appealing and possibly more sustainable alternative is provided by novel neuromorphic paradigms, which directly implement ANNs in hardware. However, little is known about the actual benefits of running ANNs on neuromorphic hardware for use cases in scientific computing. Here we present a methodology for measuring the energy cost and compute time for inference tasks with ANNs on conventional hardware. In addition, we have designed an architecture for these tasks and estimate the same metrics based on a state-of-the-art analog in-memory computing (AIMC) platform, one of the key paradigms in neuromorphic computing. Both methodologies are compared for a use case in quantum many-body physics in two dimensional condensed matter systems and for anomaly detection at 40 MHz rates at the Large Hadron Collider in particle physics. We find that AIMC can achieve up to one order of magnitude shorter computation times than conventional hardware, at an energy cost that is up to three orders of magnitude smaller. This suggests great potential for faster and more sustainable scientific computing with neuromorphic hardware. △ Less

Submitted 21 February, 2023; v1 submitted 21 September, 2022; originally announced September 2022.

Comments: 7 pages, 4 figures, submitted to and accepted by APL Machine Learning

Journal ref: APL Machine Learning 1, 016101 (2023)

Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface

Authors: I. Leermakers, K. Rubi, M. Yang, B. Kerdi, M. Goiran, W. Escoffier, A. S. Rana, A. E. M. Smink, A. Brinkman, H. Hilgenkamp, J. C. Maan, U. Zeitler

Abstract: We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers… ▽ More We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers after illumination leads to quantum oscillations in the magnetoresistance originating from the Landau quantization. The carrier density ($\sim 2 \times 10^{12}$ cm$^{-2}$) and effective mass ($\sim 1.7 ~m_e$) estimated from the oscillations suggest that the high-mobility electrons occupy the d$_{xz/yz}$ subbands of Ti:t$_{2g}$ orbital extending deep within the conducting sheet of SrTiO$_3$. Our results demonstrate that the illumination which induces additional carriers at the interface can pave the way to control the Kondo-like scattering and study the quantum transport in the complex oxide heterostructures. △ Less

Submitted 20 August, 2021; originally announced August 2021.

Balanced Detection in Femtosecond X-ray Absorption Spectroscopy to Reach the Ultimate Sensitivity Limit

Authors: W. F. Schlotter, M. Beye, S. Zohar, G. Coslovich, G. L. Dakovski, M. -F. Lin, Y. Liu, A. Reid, S. Stubbs, P. Walter, K. Nakahara, P. Hart, P. S. Miedema, L. LeGuyader, K. Hofhuis, Phu Tran Phong Le, Johan E. ten Elshof, H. Hilgenkamp, G. Koster, X. H. Verbeek, S. Smit, M. S. Golden, H. A. Durr, A. Sakdinawat

Abstract: X-ray absorption spectroscopy (XAS) is a powerful and well established technique with sensitivity to elemental and chemical composition. Despite these advantages, its implementation has not kept pace with the development of ultrafast pulsed x-ray sources where XAS can capture femtosecond chemical processes. X-ray Free Electron Lasers (XFELs) deliver femtosecond, narrow bandwidth (… ▽ More X-ray absorption spectroscopy (XAS) is a powerful and well established technique with sensitivity to elemental and chemical composition. Despite these advantages, its implementation has not kept pace with the development of ultrafast pulsed x-ray sources where XAS can capture femtosecond chemical processes. X-ray Free Electron Lasers (XFELs) deliver femtosecond, narrow bandwidth ($\frac{ΔE}{E} < 0.5\%$) pulses containing $\sim 10^{10}$ photons. However, the energy contained in each pulse fluctuates thus complicating pulse by pulse efforts to quantify the number of photons. Improvements in counting the photons in each pulse have defined the state of the art for XAS sensitivity. Here we demonstrate a final step in these improvements through a balanced detection method that approaches the photon counting shot noise limit. In doing so, we obtain high quality absorption spectra from the insulator-metal transition in VO$_2$ and unlock a method to explore dilute systems, subtle processes and nonlinear phenomena with ultrafast x-rays. The method is especially beneficial for x-ray light sources where integration and averaging are not viable options to improve sensitivity. △ Less

Submitted 24 June, 2020; originally announced June 2020.

Gate-tuned Anomalous Hall Effect Driven by Rashba Splitting in Intermixed LaAlO3/GdTiO3/SrTiO3

Authors: N. Lebedev, M. Stehno, A. Rana, P. Reith, N. Gauquelin, J. Verbeeck, H. Hilgenkamp, A. Brinkman, J. Aarts

Abstract: The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the in… ▽ More The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the influence of magnetic ions by measuring intermixed LaAlO3/GdTiO3/SrTiO3 at temperatures below 10 K. We find that, as function of gate voltage, the system undergoes a Lifshitz transition, while at the same time an onset of AHE is observed. However, we do not observe clear signs of ferromagnetism. We argue the AHE to be due to the change in Rashba spin-orbit coupling at the Lifshitz transition and conclude that also paramagnetic moments which are easily polarizable at low temperatures and high magnetic filds lead to the presence of AHE, which needs to be taken into account when extracting carrier densities and mobilities. △ Less

Submitted 26 February, 2020; originally announced February 2020.

Comments: 11 pages, 8 figures; and supplement

Structure and magnetic properties of epitaxial CaFe2O4 thin films

Authors: Silvia Damerio, Pavan Nukala, Jean Juraszek, Pim Reith, Hans Hilgenkamp, Beatriz Noheda

Abstract: CaFe2O4 is a highly anisotropic antiferromagnet reported to display two spin arrangements with up-up-down-down (phase A) and up-down-up-down (phase B) configurations. The relative stability of these phases is ruled by the competing ferromagnetic and antiferromagnetic interactions between Fe3+ spins arranged in two different environments, but a complete understanding of the magnetic structure of th… ▽ More CaFe2O4 is a highly anisotropic antiferromagnet reported to display two spin arrangements with up-up-down-down (phase A) and up-down-up-down (phase B) configurations. The relative stability of these phases is ruled by the competing ferromagnetic and antiferromagnetic interactions between Fe3+ spins arranged in two different environments, but a complete understanding of the magnetic structure of this material does not exist yet. In this study we investigate epitaxial CaFe2O4 thin films grown on TiO2 (110) substrates by means of Pulsed Laser Deposition (PLD). Structural characterization reveals the coexistence of two out-of-plane crystal orientations and the formation of three in-plane oriented domains. The magnetic properties of the films, investigated macroscopically as well as locally, including highly sensitive Mossbauer spectroscopy, reveal the presence of just one order parameter showing long-range ordering below T = 185 K and the critical nature of the transition. In addition, a non-zero in-plane magnetization is found, consistent with the presence of uncompensated spins at phase or domain boundaries, as proposed for bulk samples. △ Less

Submitted 28 April, 2020; v1 submitted 30 January, 2020; originally announced January 2020.

Comments: Changes are made to take into account the newly published paper by Songvilay et al. (PRB 101,014407) Changes are in last sentence of the abstract, 5th paragraph of the discussion section and conclusions paragraph

Journal ref: npj Quantum Materials 5, 33 (2020)

Efficient charge modulation in ultrathin LaAlO$_3$-SrTiO$_3$ field-effect transistors

Authors: A. E. M. Smink, B. Prabowo, B. Stadhouder, N. Gauquelin, J. Schmitz, H. Hilgenkamp, W. G. van der Wiel

Abstract: At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report repeatable transistor operation in locally gated LaAlO$_3$-SrTiO$_3$ field-effect devices of which the LaAlO$_3$ dielectric is only four unit cells thin, the cri… ▽ More At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report repeatable transistor operation in locally gated LaAlO$_3$-SrTiO$_3$ field-effect devices of which the LaAlO$_3$ dielectric is only four unit cells thin, the critical thickness for conduction at this interface. This extremely thin dielectric allows a very efficient charge modulation of ${\sim}3.2\times10^{13}$ cm$^{-2}$ within a gate-voltage window of $\pm1$ V, as extracted from capacitance-voltage measurements. These also reveal a large stray capacitance between gate and source, presenting a complication for nanoscale device operation. Despite the small LaAlO$_3$ thickness, we observe a negligible gate leakage current, which we ascribe to the extension of the conducting states into the SrTiO$_3$ substrate. △ Less

Submitted 27 September, 2019; originally announced September 2019.

Comments: 5 pages, 4 figures. The following article has been submitted to Applied Physics Letters

New insights into the electron trap** mechanism in LaAlO_3 / SrTiO3 heterostructures

Authors: Chunhai Yin, Alexander E. M. Smink, Inge Leermakers, Lucas M. K. Tang, Nikita Lebedev, Uli Zeitler, Wilfred G. van der Wiel, Hans Hilgenkamp, Jan Aarts

Abstract: In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trap** in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent Schroedinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. We find that the trapped electrons follow an expo… ▽ More In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trap** in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent Schroedinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. We find that the trapped electrons follow an exponentially decaying spatial distribution away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trap** of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate swee** experiments strengthen our conclusion that the thermal escape mechanism is not valid. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO3. Our work indicates that electron trap** is a universal phenomenon in SrTiO3-based two-dimensional electron systems. △ Less

Submitted 20 February, 2019; originally announced February 2019.

Comments: manuscript + supplementary information, 8 pages

Journal ref: Phys. Rev. Lett. 124, 017702 (2020)

Tailoring Vanadium Dioxide Film Orientation using Nanosheets: A Combined Microscopy, Diffraction, Transport and Soft X-ray in Transmission Study

Authors: Phu Tran Phong Le, Kevin Hofhuis, Abhi Rana, Mark Huijben, Hans Hilgenkamp, G. Rijnders, A. ten Elshof, Gertjan Koster, Nicolas Gauquelin, Gunnar Lumbeeck, Christian Schlüßler-Langeheine, Horia Popescu, F. Fortuna, Steef Smit, Xanthe H. Verbeek, Georgios Araizi-Kanoutas, Shrawan Mishra, Igor Vakivskyi, Hermann A. Durr, Mark S. Golden

Abstract: VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R… ▽ More VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R and (-402)M1/(002)R by coating the bulk substrates with Ti0.87O2 and NbWO6 nanosheets, respectively, prior to VO2 growth. Temperature dependent X-ray diffraction and automated crystal orientation map** in microprobe TEM mode (ACOM-TEM) characterized the high phase purity, the crystallographic and orientational properties of the VO2 films. Transport measurements and soft X-ray absorption in transmission are used to probe the VO2 metal-insulator transition, showing results of a quality equal to those from epitaxial films on bulk single-crystal substrates. Successful local manipulation of two different VO2 orientations on a single substrate is demonstrated using VO2 grown on lithographically-patterned lines of Ti0.87O2 and NbWO6 nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet-templated VO2 films for advanced lensless imaging of the metal-insulator transition using coherent soft X-rays is discussed. △ Less

Submitted 25 January, 2019; originally announced January 2019.

Analysis of low-field isotropic vortex glass containing vortex groups in YBCO thin films visualized by scanning SQUID microscopy

Authors: Frederick S. Wells, Alexey V. Pan, X. Renshaw Wang, Sergey A. Fedoseev, Hans Hilgenkamp

Abstract: The glass-like vortex distribution in pulsed laser deposited YBCO thin films is observed by scanning superconducting quantum interference device microscopy and analysed for ordering after cooling in magnetic fields significantly smaller than the Earth's field. Autocorrelation calculations on this distribution show a weak short-range positional order, while Delaunay triangulation shows a near-compl… ▽ More The glass-like vortex distribution in pulsed laser deposited YBCO thin films is observed by scanning superconducting quantum interference device microscopy and analysed for ordering after cooling in magnetic fields significantly smaller than the Earth's field. Autocorrelation calculations on this distribution show a weak short-range positional order, while Delaunay triangulation shows a near-complete lack of orientational order. The distribution of these vortices is finally characterised as an isotropic vortex glass. Abnormally closely spaced groups of vortices, which are statistically unlikely to occur, are observed above a threshold magnetic field. The origin of these groups is discussed, but will require further investigation. △ Less

Submitted 17 July, 2018; originally announced July 2018.

Journal ref: Scientific Reports 5 8677 (2015)

Correlation between Superconductivity, Band Filling and Electron Confinement at the LaAlO$_{3}$-SrTiO$_{3}$ Interface

Authors: A. E. M. Smink, M. P. Stehno, J. C. de Boer, A. Brinkman, W. G. van der Wiel, H. Hilgenkamp

Abstract: By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects on the superconducting critical temperature, implying that the confining potential well has a profound effect on superconductivity. We investigate the origin of… ▽ More By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects on the superconducting critical temperature, implying that the confining potential well has a profound effect on superconductivity. We investigate the origin of this behavior by comparing the gate-dependence of $T_c$ to the corresponding evolution of the band filling with gate voltage. For several backgate voltages, we observe maximum $T_c$ to consistently coincide with a kink in tuning the band filling for high topgate voltage. Self-consistent Schrödinger-Poisson calculations relate this kink to a Lifshitz transition of the second $d_{xy}$ subband. These results establish a major role for confinement-induced subbands in the phase diagram of SrTiO$_3$ surface states, and establish gating as a means to control the relative energy of these states. △ Less

Submitted 24 May, 2018; v1 submitted 9 January, 2018; originally announced January 2018.

Comments: 17 pages, 5 figures

Journal ref: Phys. Rev. B 97, 245113 (2018)

On the formation of a conducting surface channel by ionic liquid gating of an insulator

Authors: Hasan Atesci, Francesco Coneri, Maarten Leeuwenhoek, Jouri Bommer, James R. T. Seddon, Hans Hilgenkamp, Jan M. Van Ruitenbeek

Abstract: Ionic liquid gating has become a popular tool for tuning the charge carrier densities of complex oxides. Among these the band insulator SrTiO$_3$ is one of the most extensively studied materials. While experiments have succeeded in inducing (super)conductivity, the process by which ionic liquid gating turns this insulator into a conductor is still under scrutiny. Recent experiments have suggested… ▽ More Ionic liquid gating has become a popular tool for tuning the charge carrier densities of complex oxides. Among these the band insulator SrTiO$_3$ is one of the most extensively studied materials. While experiments have succeeded in inducing (super)conductivity, the process by which ionic liquid gating turns this insulator into a conductor is still under scrutiny. Recent experiments have suggested an electrochemical rather than electrostatic origin of the induced charge carriers. Here, we report experiments probing the time evolution of conduction of SrTiO$_3$ near the glass transition temperature of the ionic liquid. By cooling down to temperatures near the glass transition of the ionic liquid the process develops slowly and can be seen to evolve in time. The experiments reveal a process characterized by waiting times that can be as long as several minutes preceding a sudden appearance of conduction. For the conditions applied in our experiments we find a consistent interpretation in terms of an electrostatic mechanism for the formation of a conducting path at the surface of SrTiO$_3$. The mechanism by which the conducting surface channel develops relies on a nearly homogeneous lowering of the surface potential until the conduction band edge of SrTiO$_3$ reaches the Fermi level of the electrodes. △ Less

Submitted 3 July, 2018; v1 submitted 4 September, 2017; originally announced September 2017.

Comments: 22 pages, 7 figures

Analysing Magnetism Using Scanning SQUID Microscopy

Authors: P. Reith, X. Renshaw Wang, H. Hilgenkamp

Abstract: Scanning superconducting quantum interference device microscopy (SSM) is a scanning probe technique that images local magnetic flux, which allows for map** of magnetic fields with high field and spatial accuracy. Many studies involving SSM have been published in the last decades, using SSM to make qualitative statements about magnetism. However, quantitative analysis using SSM has received less… ▽ More Scanning superconducting quantum interference device microscopy (SSM) is a scanning probe technique that images local magnetic flux, which allows for map** of magnetic fields with high field and spatial accuracy. Many studies involving SSM have been published in the last decades, using SSM to make qualitative statements about magnetism. However, quantitative analysis using SSM has received less attention. In this work, we discuss several aspects of interpreting SSM images and methods to improve quantitative analysis. First, we analyse the spatial resolution and how it depends on several factors. Second, we discuss the analysis of SSM scans and the information obtained from the SSM data. Using simulations, we show how signals evolve as a function of changing scan height, SQUID loop size, magnetization strength and orientation. We also investigated 2-dimensional autocorrelation analysis to extract information about the size, shape and symmetry of magnetic features. Finally, we provide an outlook on possible future applications and improvements. △ Less

Submitted 24 August, 2017; originally announced August 2017.

Comments: 16 pages, 10 figures

Scaling Universality at the Dynamic Vortex Mott Transition

Authors: Martijn Lankhorst, Nicola Poccia, Martin P. Stehno, Alexey Galda, Himadri Barman, Francesco Coneri, Hans Hilgenkamp, Alexander Brinkman, Alexander A. Golubov, Vikram Tripathi, Tatyana I. Baturina, Valerii M. Vinokur

Abstract: The dynamic Mott insulator-to-metal transition (DMT) is key to many intriguing phenomena in condensed matter physics yet it remains nearly unexplored. The cleanest way to observe DMT, without the interference from disorder and other effects inherent to electronic and atomic systems, is to employ the vortex Mott states formed by superconducting vortices in a regular array of pinning sites. The appl… ▽ More The dynamic Mott insulator-to-metal transition (DMT) is key to many intriguing phenomena in condensed matter physics yet it remains nearly unexplored. The cleanest way to observe DMT, without the interference from disorder and other effects inherent to electronic and atomic systems, is to employ the vortex Mott states formed by superconducting vortices in a regular array of pinning sites. The applied electric current delocalizes vortices and drives the dynamic vortex Mott transition. Here we report the critical behavior of the vortex system as it crosses the DMT line, driven by either current or temperature. We find universal scaling with respect to both, expressed by the same scaling function and characterized by a single critical exponent coinciding with the exponent for the thermodynamic Mott transition. We develop a theory for the DMT based on the parity reflection-time reversal (PT) symmetry breaking formalism and find that the nonequilibrium-induced Mott transition has the same critical behavior as thermal Mott transition. Our findings demonstrate the existence of physical systems in which the effect of nonequilibrium drive is to generate effective temperature and hence the transition belonging in the thermal universality class. We establish PT symmetry-breaking as a universal mechanism for out-of-equilibrium phase transitions. △ Less

Submitted 1 August, 2017; originally announced August 2017.

Comments: 13 pages, 7 figures

Journal ref: Phys. Rev. B 97, 020504 (2018)

Gate-tunable band structure of the LaAlO$_3$-SrTiO$_3$ interface

Authors: A. E. M. Smink, J. C. de Boer, M. P. Stehno, A. Brinkman, W. G. van der Wiel, H. Hilgenkamp

Abstract: The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observ… ▽ More The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observe a Lifshitz transition at a density of $2.9\times10^{13}$ cm$^{-2}$. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex oxide interfaces. △ Less

Submitted 7 October, 2016; originally announced October 2016.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. Lett. 118, 106401 (2017)

Ferromagnetism and conductivity in atomically thin SrRuO3

Authors: H. Boschker, T. Harada, T. Asaba, R. Ashoori, A. V. Boris, H. Hilgenkamp, C. R. Hughes, M. E. Holtz, L. Li, D. A. Muller, H. Nair, P. Reith, X. Renshaw Wang, D. G. Schlom, A. Soukiassian, J. Mannhart

Abstract: Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 samples that are capped with SrTiO3. We achieve samples of exceptional quality. In these samples, the electron systems comprise only a single RuO2 plane… ▽ More Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 samples that are capped with SrTiO3. We achieve samples of exceptional quality. In these samples, the electron systems comprise only a single RuO2 plane. We observe conductivity down to 50 mK, a ferromagnetic state with a Curie temperature of 25 K, and signals of magnetism persisting up to approximately 100 K. △ Less

Submitted 11 February, 2019; v1 submitted 28 September, 2016; originally announced September 2016.

Comments: The version published at Phys. Rev. X (open access) contains a large amount of additional material compared to the version published here

Journal ref: Phys. Rev. X 9, 011027 (2019)

Effect of high oxygen pressure annealing on superconducting Nd1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets

Authors: M. Hoek, F. Coneri, D. P. Leusink, P. D. Eerkes, X. Renshaw Wang, H. Hilgenkamp

Abstract: We show that the quality of Nd1.85Ce0.15CuO4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3 phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be foll… ▽ More We show that the quality of Nd1.85Ce0.15CuO4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3 phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions. △ Less

Submitted 23 July, 2015; originally announced July 2015.

Comments: This is an author-created, un-copyedited version of an article accepted for publication in Superconductor Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0953-2048/27/4/044017

Journal ref: Supercond. Sci. Technol. 27 044017, 2014

Strain accommodation through facet matching in La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$/Nd$_\text{1.85}$Ce$_\text{0.15}$CuO$_\text{4}$ ramp-edge junctions

Authors: M. Hoek, F. Coneri, X. Renshaw Wang, N. Poccia, X. Ke, G. Van Tendeloo, H. Hilgenkamp

Abstract: Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd$_\text{1.85}$Ce$_\text{0.15}$CuO$_\text{4}$ and superconducting hole-doped La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$ thin films, the latter being th… ▽ More Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd$_\text{1.85}$Ce$_\text{0.15}$CuO$_\text{4}$ and superconducting hole-doped La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$ thin films, the latter being the top layer. On the ramp, a new growth mode of La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$ with a 3.3 degree tilt of the c-axis is found. We explain the tilt by develo** a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed. △ Less

Submitted 3 August, 2015; v1 submitted 23 July, 2015; originally announced July 2015.

Comments: 5 pages, 4 figures & 3 pages supplemental information with 2 figures. Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APL Mat. 3, 086101 (2015) and may be found at http://dx.doi.org/10.1063/1.4927796

Journal ref: APL Mat. 3, 086101 (2015)

Manipulating electronic states at oxide interfaces using focused micro X-rays from standard lab-sources

Authors: Nicola Poccia, Alessandro Ricci, Francesco Coneri, Martin Stehno, Gaetano Campi, Nicola Demitri, Giorgio Bais, X. Renshaw Wang, H. Hilgenkamp

Abstract: Recently, x-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization and to probe their structure. Here we explore a method of defect-engineering low-dimensional systems using focused laboratory-scale X-ray sources. We demonstrate an irreversible change in the conducting properties of the 2-dimensional electron gas at the interface between the… ▽ More Recently, x-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization and to probe their structure. Here we explore a method of defect-engineering low-dimensional systems using focused laboratory-scale X-ray sources. We demonstrate an irreversible change in the conducting properties of the 2-dimensional electron gas at the interface between the complex oxide materials LaAlO3 and SrTiO3 by X-ray irradiation. The electrical resistance is monitored during exposure as the irradiated regions are driven into a high resistance state. Our results suggest attention shall be paid on electronic structure modification in X-ray spectroscopic studies and highlight large-area defect manipulation and direct device patterning as possible new fields of application for focused laboratory X-ray sources. △ Less

Submitted 1 November, 2014; originally announced November 2014.

Comments: 12 pages, 4 figures

Imaging and Control of Ferromagnetism in a Polar Antiferromagnet

Authors: X. Renshaw Wang, C. J. Li, W. M. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, Nicola Poccia, Arturas Vailionis, T. Venkatesan, J. M. D. Coey, E. Y. Tsymbal, Ariando, H. Hilgenkamp

Abstract: Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial films can result in monolayer-scale transitions in electronic or magnetic properties. Here we report an atomically sharp antiferromagnetic-to-ferromagnetic phase… ▽ More Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial films can result in monolayer-scale transitions in electronic or magnetic properties. Here we report an atomically sharp antiferromagnetic-to-ferromagnetic phase transition when atomically growing polar antiferromagnetic LaMnO3 (001) films on SrTiO3 substrates. For a thickness of five unit cells or less, the films are antiferromagnetic, but for six unit cells or more, the LaMnO3 film undergoes a phase transition to a ferromagnetic state over its entire area, which is visualized by scanning superconducting quantum interference device microscopy. The transition is explained in terms of electronic reconstruction originating from the polar nature of the LaMnO3 (001) films. Our results demonstrate how new emergent functionalities can be visualized and engineered in atomically thick oxide films at the atomic level. △ Less

Submitted 1 September, 2014; originally announced September 2014.

Critical behavior at the dynamic Mott transition

Authors: Nicola Poccia, Tatyana I. Baturina, Francesco Coneri, Cor G. Molenaar, X. Renshaw Wang, Ginestra Bianconi, Alexander Brinkman, Hans Hilgenkamp, Alexander A. Golubov, Valerii M. Vinokur

Abstract: We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott insulator where magnetic field-induced vortices are frozen in the dimples of the egg crate potential by their strong repulsion interaction is discovered. We find an in… ▽ More We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott insulator where magnetic field-induced vortices are frozen in the dimples of the egg crate potential by their strong repulsion interaction is discovered. We find an insulator-to-metal transition driven by the applied electric current and determine critical exponents that exhibit striking similarity with the common thermodynamic liquid-gas transition. A simple and straightforward quantum mechanical picture is proposed that describes both tunneling dynamics in the deep insulating state and the observed scaling behavior in the vicinity of the critical point. Our findings offer a comprehensive description of dynamic Mott critical behavior and establish a deep connection between equilibrium and nonequilibrium phase transitions. △ Less

Submitted 28 August, 2014; v1 submitted 23 August, 2014; originally announced August 2014.

Comments: RevTex4, 9 pages, 5 figures

Transport and thermoelectric properties of the LaAlO$_3$/SrTiO$_3$ interface

Authors: A. Jost, V. K. Guduru, S. Wiedmann, J. C. Maan, U. Zeitler, S. Wenderich, A. Brinkman, H. Hilgenkamp

Abstract: The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18 T. For $T>$ 4.2 K, two different electron-like charge carriers originating from two electron channels which contribute to transport are observed. We probe the… ▽ More The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18 T. For $T>$ 4.2 K, two different electron-like charge carriers originating from two electron channels which contribute to transport are observed. We probe the contributions of a degenerate and a non-degenerate band to the thermoelectric power and develop a consistent model to describe the temperature dependence of the thermoelectric tensor. Anomalies in the data point to an additional magnetic field dependent scattering. △ Less

Submitted 30 March, 2015; v1 submitted 28 July, 2014; originally announced July 2014.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 91, 045304 (2015)

Nonlocal Andreev reflection, fractional charge and current-phase relation in topological bilayer exciton condensate junctions

Authors: M. Veldhorst, M. Hoek, M. Snelder, H. Hilgenkamp, A. A. Golubov, A. Brinkman

Abstract: We study Andreev reflection and Josephson currents in topological bilayer exciton condensates (TEC). These systems can create 100% spin entangled nonlocal currents with high amplitudes due to perfect nonlocal Andreev reflection. This Andreev reflection process can be gate tuned from a regime of purely retro reflection to purely specular reflection. We have studied the bound states in TEC-TI-TEC Jo… ▽ More We study Andreev reflection and Josephson currents in topological bilayer exciton condensates (TEC). These systems can create 100% spin entangled nonlocal currents with high amplitudes due to perfect nonlocal Andreev reflection. This Andreev reflection process can be gate tuned from a regime of purely retro reflection to purely specular reflection. We have studied the bound states in TEC-TI-TEC Josephson junctions and find a gapless dispersion for perpendicular incidence. The presence of a sharp transition in the supercurrent-phase relationship when the system is in equilibrium is a signature of fractional charge, which can be further revealed in ac measurements faster than relaxation processes via Landau-Zener processes. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Comments: Submitted to Physical Review B

Journal ref: Phys. Rev. B 90, 035428 (2014)

Josephson supercurrent in a topological insulator without a bulk shunt

Authors: M. Snelder, C. G. Molenaar, Y. Pan, D. Wu, Y. K. Huang, A. de Visser, A. A. Golubov, W. G. van der Wiel, H. Hilgenkamp, M. S. Golden, A. Brinkman

Abstract: A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that the bulk conductivity can be neglected at the temperatures where we study the proximity induced superconductivity. We prepared Josephson junctions with widths in the order of 40… ▽ More A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that the bulk conductivity can be neglected at the temperatures where we study the proximity induced superconductivity. We prepared Josephson junctions with widths in the order of 40 nm and lengths in the order of 50 to 80 nm on several Bi1.5Sb0.5Te1.7Se1.3 flakes and measured down to 30 mK. The Fraunhofer patterns unequivocally reveal that the supercurrent is a Josephson supercurrent. The measured critical currents are reproducibly observed on different devices and upon multiple cooldowns, and the critical current dependence on temperature as well as magnetic field can be well explained by diffusive transport models and geometric effects. △ Less

Submitted 30 June, 2014; originally announced June 2014.

Journal ref: Supercond. Sci. Technol. 27 (2014) 104001

Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering

Authors: V. K. Guduru, A. McCollam, A. Jost, S. Wenderich, H. Hilgenkamp, J. C. Maan, A. Brinkman, U. Zeitler

Abstract: Magnetotransport measurements of charge carriers at the interface of a LaAlO3/SrTiO3 heterostructure with 26 unit cells of LaAlO3 show Hall resistance and magnetoresistance which at low and high temperatures is described by a single channel of electron-like charge carriers. At intermediate temperatures, we observe non-linear Hall resistance and positive magnetoresistance, establishing the presence… ▽ More Magnetotransport measurements of charge carriers at the interface of a LaAlO3/SrTiO3 heterostructure with 26 unit cells of LaAlO3 show Hall resistance and magnetoresistance which at low and high temperatures is described by a single channel of electron-like charge carriers. At intermediate temperatures, we observe non-linear Hall resistance and positive magnetoresistance, establishing the presence of at least two electron-like channels with significantly different mobilities and carrier concentrations. These channels are separated by 6 meV in energy and their temperature dependent occupation and mobilities are responsible for the observed transport properties of the interface. We observe that one of the channels has a mobility that decreases with decreasing temperature, consistent with magnetic scattering in this channel. △ Less

Submitted 22 November, 2013; originally announced November 2013.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 88, 241301(R) (2013)

Exciton condensation in strongly correlated electron bilayers

Authors: Louk Rademaker, Jeroen van den Brink, Jan Zaanen, Hans Hilgenkamp

Abstract: We studied the possibility of exciton condensation in Mott insulating bilayers. In these strongly correlated systems an exciton is the bound state of a double occupied and empty site. In the strong coupling limit the exciton acts as a hard-core boson. Its physics are captured by the exciton t-J model, containing an effective XXZ model describing the exciton dynamics only. Using numerical simulatio… ▽ More We studied the possibility of exciton condensation in Mott insulating bilayers. In these strongly correlated systems an exciton is the bound state of a double occupied and empty site. In the strong coupling limit the exciton acts as a hard-core boson. Its physics are captured by the exciton t-J model, containing an effective XXZ model describing the exciton dynamics only. Using numerical simulations and analytical mean field theory we constructed the ground state phase diagram. Three homogeneous phases can be distinguished: the antiferromagnet, the exciton checkerboard crystal and the exciton superfluid. For most model parameters, however, we predict macroscopic phase separation between these phases. The exciton superfluid exists only for large exciton hop** energy. Additionally we studied the collective modes and susceptibilities of the three phases. In the superfluid phase we find the striking feature that the bandwidth of the spin-triplet excitations, potentially detectable by resonant inelastic x-ray scattering (RIXS), is proportional to the superfluid density. The superfluid phase mode is visible in the charge susceptibility, measurable by RIXS or electron energy loss spectroscopy (EELS). △ Less

Submitted 2 October, 2013; originally announced October 2013.

Comments: 21 pages, 14 figures

Journal ref: Phys. Rev. B 88, 235127 (2013)

Thin films of the spin ice compound Ho2Ti2O7

Authors: D. P. Leusink, F. Coneri, M. Hoek, S. Turner, H. Idrissi, G. Van Tendeloo, H. Hilgenkamp

Abstract: The pyrochlore compounds Ho2Ti2O7 and Dy2Ti2O7 show an exotic form of magnetism called the spin ice state, resulting from the interplay between geometrical frustration and ferromagnetic coupling. A fascinating feature of this state is the appearance of magnetic monopoles as emergent excitations above the degenerate ground state. Over the past years, strong effort has been devoted to the investigat… ▽ More The pyrochlore compounds Ho2Ti2O7 and Dy2Ti2O7 show an exotic form of magnetism called the spin ice state, resulting from the interplay between geometrical frustration and ferromagnetic coupling. A fascinating feature of this state is the appearance of magnetic monopoles as emergent excitations above the degenerate ground state. Over the past years, strong effort has been devoted to the investigation of these monopoles and other properties of the spin ice state in bulk crystals. A tantalising prospect is to incorporate spin ice materials into devices for spintronics and devices that can manipulate the magnetic monopoles. This would require the availability of spin ice thin films. Here, we report the fabrication of Ho2Ti2O7 thin films using pulsed laser deposition. These films not only show a high crystalline quality, but also exhibit the hallmarks of a spin ice: a pronounced magnetic anisotropy and an intermediate plateau in the magnetisation along the [111] crystal direction. △ Less

Submitted 10 September, 2013; originally announced September 2013.

Modulation of conductance and superconductivity by top-gating in LaAlO3/SrTiO3 2-dimensional electron systems

Authors: P. D. Eerkes, W. G. van der Wiel, H. Hilgenkamp

Abstract: We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO3 substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and co… ▽ More We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO3 substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and complete on/off switching of the interface (super)-conductivity, while maintaining the usual, intrinsic characteristics for these LaAlO3/SrTiO3 interfaces when no gate voltage is applied. △ Less

Submitted 24 June, 2013; originally announced June 2013.

Enhancement of spin propagation due to interlayer exciton condensation

Authors: Louk Rademaker, Jeroen van den Brink, Hans Hilgenkamp, Jan Zaanen

Abstract: We show that an interlayer exciton condensate doped into a strongly correlated Mott insulator exhibits a remarkable enhancement of the bandwidth of the magnetic excitations (triplons). This triplon is visible in the dynamical magnetic susceptibility and can be measured using resonant inelastic X-ray scattering. The bandwidth of the triplon scales with the exciton superfluid density, but only in th… ▽ More We show that an interlayer exciton condensate doped into a strongly correlated Mott insulator exhibits a remarkable enhancement of the bandwidth of the magnetic excitations (triplons). This triplon is visible in the dynamical magnetic susceptibility and can be measured using resonant inelastic X-ray scattering. The bandwidth of the triplon scales with the exciton superfluid density, but only in the limit of strong correlations. As such the triplon bandwidth acts as a probe of exciton-spin interactions in the condensate. △ Less

Submitted 6 September, 2013; v1 submitted 12 April, 2013; originally announced April 2013.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 88, 121101(R) (2013)

Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO3/LaAlO3 oxide heterostructures

Authors: E. Slooten, Zhicheng Zhong, H. J. A. Molegraaf, P. D. Eerkes, S. de Jong, F. Massee, E. van Heumen, M. K. Kruize, S. Wenderich, J. E. Kleibeuker, M. Gorgoi, H. Hilgenkamp, A. Brinkman, M. Huijben, G. Rijnders, D. H. A. Blank, G. Koster, P. J. Kelly, M. S. Golden

Abstract: A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly s… ▽ More A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly show occupation of Ti 3d states already for two unit cells of LaAlO3. Secondly, the LaAlO3 core levels were seen to shift to lower binding energy as the LaAlO3 overlayer thickness, n, was increased - agreeing with the expectations from the canonical electron transfer model for the emergence of conductivity at the interface. However, not only is the energy offset of only 300meV between n=2 (insulating interface) and n=6 (metallic interface) an order of magnitude smaller than the simple expectation, but it is also clearly not the sum of a series of unit-cell by unit-cell shifts within the LaAlO3 block. Both of these facts argue against the simple charge-transfer picture involving a cumulative shift of the LaAlO3 valence bands above the SrTiO3 conduction bands, resulting in charge transfer only for n>3. Turning to the theoretical data, our density functional simulations show that the presence of oxygen vacancies at the LaAlO3 surface at the 25% level reverses the direction of the internal field in the LaAlO3. Therefore, taking the experimental and theoretical results together, a consistent picture emerges for real-life samples in which nature does not wait until n=4 and already for n=2, mechanisms other than internal-electric-field-driven electron transfer from idealized LaAlO3 to near-interfacial states in the SrTiO3 substrate are active in heading off the incipient polarization catastrophe that drives the physics in these systems. △ Less

Submitted 11 February, 2013; v1 submitted 10 January, 2013; originally announced January 2013.

Comments: 12 pages, 5 figures, submitted to Phys. Rev. B

Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators

Authors: M. Veldhorst, M. Snelder, M. Hoek, C. G. Molenaar, D. P. Leusink, A. A. Golubov, H. Hilgenkamp, A. Brinkman

Abstract: The surface of a 3D topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to the magnetotransport in Bi-based 3D topological insulators, as well as the superconducting transport properties of hybrid structures consisting of superconductors… ▽ More The surface of a 3D topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to the magnetotransport in Bi-based 3D topological insulators, as well as the superconducting transport properties of hybrid structures consisting of superconductors and these topological insulators. The helical spin-momentum coupling of the surface state electrons becomes visible in quantum corrections to the conductivity and magnetoresistance oscillations. An analysis will be provided of the reported magnetoresistance, also in the presence of bulk conductivity shunts. Special attention is given to the large and linear magnetoresistance. Superconductivity can be induced in topological superconductors by means of the proximity effect. The induced supercurrents, Josephson effects and current-phase relations will be reviewed. These materials hold great potential in the field of spintronics and the route towards Majorana devices. △ Less

Submitted 9 December, 2012; originally announced December 2012.

Comments: Accepted review paper for focus issue on Topological Insulators - From materials design to reality (physica status solidi - RRL)

Journal ref: Phys. Status Solidi (RRL) 7, 26 (2013)

Band offsets and density of Ti3+ states probed by X-ray photoemission on LaAlO3/SrTiO3 heterointerfaces and their LaAlO3 and SrTiO3 bulk precursors

Authors: G. Drera, G. Salvinelli, A. Brinkman, M. Huijben, G. Koster, H. Hilgenkamp, G. Rijnders, D. Visentin, L. Sangaletti

Abstract: A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by X-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band-offset and the density of Ti3+ states, respectively. It is shown that the dominant effects on the… ▽ More A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by X-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band-offset and the density of Ti3+ states, respectively. It is shown that the dominant effects on the local electronic properties are determined by the O2 partial pressure during the growth. In particular, a low P(O2) yields Ti3+ states with higher density and lower binding energy as compared to the sample grown at high P(O2) or to the bare STO reference sample. Band offset effects are all below about 0.7 eV, but a careful analysis of Ti 2p and Sr 3d peaks shows that valence band offsets can be at the origin of the observed peak width. In particular, the largest offset is shown by the conducting sample, that displays the largest Ti 2p and Sr 3d peak widths. △ Less

Submitted 23 November, 2012; originally announced November 2012.

Comments: Submitted to Physical Review B, revised version

Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

Authors: V. K. Guduru, A. Granados del Aguila, S. Wenderich, M. K. Kruize, A. McCollam, P. C. M. Christianen, U. Zeitler, A. Brinkman, G. Rijnders, H. Hilgenkamp, J. C. Maan

Abstract: The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongl… ▽ More The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high-mobility electron channel in addition to a low-mobility electron channel which exists before illumination. △ Less

Submitted 20 November, 2012; originally announced November 2012.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 102, 051604 (2013)

Unexpected Anisotropic Two Dimensional Electron Gas at the LaAlO3/SrTiO3 (110) Interface

Authors: A. Annadi, X. Wang, K. Gopinadhan, W. M. Lu, A. Roy Barman, Z. Q. Liu, A. Srivastava, S. Saha, Y. L. Zhao, S. W. Zeng, S. Dhar, N. Tuzla, E. Olsson, Q. Zhang, B. Gu, S. Yunoki, S. Maekawa, H. Hilgenkamp, T. Venkatesan, Ariando

Abstract: The observation of a two dimensional electron gas (2DEG) (1, 2), superconductivity (3, 4), magnetic effects (5) and electronic phase separation (6-8) at the interfaces of insulating oxides, especially LaAlO3/SrTiO3, has further enhanced the potential of complex oxides for novel electronics. The occurrence of the 2DEG is strongly believed to be driven by the polarization discontinuity (9) at the in… ▽ More The observation of a two dimensional electron gas (2DEG) (1, 2), superconductivity (3, 4), magnetic effects (5) and electronic phase separation (6-8) at the interfaces of insulating oxides, especially LaAlO3/SrTiO3, has further enhanced the potential of complex oxides for novel electronics. The occurrence of the 2DEG is strongly believed to be driven by the polarization discontinuity (9) at the interface between the two oxides. In this scenario, the crystal orientation plays an important role and no conductivity would be expected for e.g., the interface between LaAlO3 and (110)-oriented SrTiO3, which should not have a polarization discontinuity (10, 11). Here, we report the observation of unexpected conductivity at the LaAlO3/SrTiO3 interface prepared on (110)-oriented SrTiO3. The conductivity was further found to be strongly anisotropic, with the ratio of the conductance along the different directions parallel to the substrate surface showing a remarkable dependence on the oxygen pressure during deposition. The conductance and its anisotropy are discussed based on the atomic structure at the interface, as revealed by Scanning Transmission Electron Microscopy (STEM) and further supported by density functional theory (DFT) calculations. △ Less

Submitted 30 August, 2012; originally announced August 2012.

Comments: 17 pages, 5 figures

Journal ref: Nature Communications 4, 1838 (2013)

Quantum oscillations and subband properties of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

Authors: A. McCollam, S. Wenderich, M. K. Kruize, V. K. Guduru, H. J. A. Molegraaf, M. Huijben, G. Koster, D. H. A. Blank, G. Rijnders, A. Brinkman, H. Hilgenkamp, U. Zeitler, J. C. Maan

Abstract: We have performed high field magnetotransport measurements to investigate the interface electron gas in LaAlO3/SrTiO3 heterostructures. Shubnikov-de Haas oscillations reveal several 2D conduction subbands with carrier effective masses between 1 and 3 m_e, quantum mobilities of order 3000 cm^2/V s, and band edges only a few millielectronvolts below the Fermi energy. Measurements in tilted magnetic… ▽ More We have performed high field magnetotransport measurements to investigate the interface electron gas in LaAlO3/SrTiO3 heterostructures. Shubnikov-de Haas oscillations reveal several 2D conduction subbands with carrier effective masses between 1 and 3 m_e, quantum mobilities of order 3000 cm^2/V s, and band edges only a few millielectronvolts below the Fermi energy. Measurements in tilted magnetic fields confirm the 2D character of the electron gas, and show evidence of inter-subband scattering. △ Less

Submitted 30 July, 2012; originally announced July 2012.

Cationic vacancy induced room-temperature ferromagnetism in transparent conducting anatase Ti_{1-x}Ta_xO_2 (x~0.05) thin films

Authors: A. Rusydi, S. Dhar, A. Roy Barman, Ariando, D. -C. Qi, M. Motapothula, J. B. Yi, I. Santoso, Y. P. Feng, K. Yang, Y. Dai, N. L. Yakovlev, J. Ding, A. T. S. Wee, G. Neuber, M. B. H. Breese, M. Ruebhausen, H. Hilgenkamp, T. Venkatesan

Abstract: We report room-temperature ferromagnetism in highly conducting transparent anatase Ti1-xTaxO2 (x~0.05) thin films grown by pulsed laser deposition on LaAlO3 substrates. Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), proton induced x-ray emission (PIXE), x-ray absorption spectroscopy (XAS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) indicated negligible mag… ▽ More We report room-temperature ferromagnetism in highly conducting transparent anatase Ti1-xTaxO2 (x~0.05) thin films grown by pulsed laser deposition on LaAlO3 substrates. Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), proton induced x-ray emission (PIXE), x-ray absorption spectroscopy (XAS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) indicated negligible magnetic contaminants in the films. The presence of ferromagnetism with concomitant large carrier densities was determined by a combination of superconducting quantum interference device (SQUID) magnetometry, electrical transport measurements, soft x-ray magnetic circular dichroism (SXMCD), XAS, and optical magnetic circular dichroism (OMCD) and was supported by first-principle calculations. SXMCD and XAS measurements revealed a 90% contribution to ferromagnetism from the Ti ions and a 10% contribution from the O ions. RBS/channelling measurements show complete Ta substitution in the Ti sites though carrier activation was only 50% at 5% Ta concentration implying compensation by cationic defects. The role of Ti vacancy and Ti3+ was studied via XAS and x-ray photoemission spectroscopy (XPS) respectively. It was found that in films with strong ferromagnetism, the Ti vacancy signal was strong while Ti3+ signal was absent. We propose (in the absence of any obvious exchange mechanisms) that the localised magnetic moments, Ti vacancy sites, are ferromagnetically ordered by itinerant carriers. Cationic-defect-induced magnetism is an alternative route to ferromagnetism in wide-band-gap semiconducting oxides without any magnetic elements. △ Less

Submitted 13 July, 2012; originally announced July 2012.

Comments: 21 pages, 10 figures, to appear in Philosophical Transaction - Royal Soc. A

Journal ref: Phil. Trans. R. Soc. A 370, 4927-4943 (2012 )

Optimizing the Majorana character of SQUIDs with topologically non-trivial barriers

Authors: M. Veldhorst, C. G. Molenaar, C. J. M. Verwijs, H. Hilgenkamp, A. Brinkman

Abstract: We have modeled SQUIDs with topologically non-trivial superconducting junctions and performed an optimization study on the Majorana fermion detection. We find that the SQUID parameters beta_L, and beta_C can be used to increase the ratio of Majorana tunneling to standard Cooper pair tunneling by more than two orders of magnitude. Most importantly, we show that dc SQUIDs including topologically tri… ▽ More We have modeled SQUIDs with topologically non-trivial superconducting junctions and performed an optimization study on the Majorana fermion detection. We find that the SQUID parameters beta_L, and beta_C can be used to increase the ratio of Majorana tunneling to standard Cooper pair tunneling by more than two orders of magnitude. Most importantly, we show that dc SQUIDs including topologically trivial components can still host strong signatures of the Majorana fermion. This paves the way towards the experimental verification of the theoretically predicted Majorana fermion. △ Less

Submitted 25 June, 2012; originally announced June 2012.

Comments: accepted by Physical Review B

Journal ref: Phys. Rev. B 86, 024509 (2012)

Experimental realization of SQUIDs with topological insulator junctions

Authors: M. Veldhorst, C. G. Molenaar, X. L. Wang, H. Hilgenkamp, A. Brinkman

Abstract: We demonstrate topological insulator (Bi$_2$Te$_3$) dc SQUIDs, based on superconducting Nb leads coupled to nano-fabricated Nb-Bi$_2$Te$_3$-Nb Josephson junctions. The high reproducibility and controllability of the fabrication process allows the creation of dc SQUIDs with parameters that are in agreement with design values. Clear critical current modulation of both the junctions and the SQUID wit… ▽ More We demonstrate topological insulator (Bi$_2$Te$_3$) dc SQUIDs, based on superconducting Nb leads coupled to nano-fabricated Nb-Bi$_2$Te$_3$-Nb Josephson junctions. The high reproducibility and controllability of the fabrication process allows the creation of dc SQUIDs with parameters that are in agreement with design values. Clear critical current modulation of both the junctions and the SQUID with applied magnetic fields have been observed. We show that the SQUIDs have a periodicity in the voltage-flux characteristic of $Φ_0$, of relevance to the ongoing pursuit of realizing interferometers for the detection of Majorana fermions in superconductor- topological insulator structures. △ Less

Submitted 26 December, 2011; originally announced December 2011.

Journal ref: Appl. Phys. Lett.100,072602 (2012)

Josephson supercurrent through a topological insulator surface state

Authors: M. Veldhorst, M. Snelder, M. Hoek, T. Gang, X. L. Wang, V. K. Guduru, U. Zeitler, W. G. v. d. Wiel, A. A. Golubov, H. Hilgenkamp, A. Brinkman

Abstract: Topological insulators are characterized by an insulating bulk with a finite band gap and conducting edge or surface states, where charge carriers are protected against backscattering. These states give rise to the quantum spin Hall effect without an external magnetic field, where electrons with opposite spins have opposite momentum at a given edge. The surface energy spectrum of a threedimensiona… ▽ More Topological insulators are characterized by an insulating bulk with a finite band gap and conducting edge or surface states, where charge carriers are protected against backscattering. These states give rise to the quantum spin Hall effect without an external magnetic field, where electrons with opposite spins have opposite momentum at a given edge. The surface energy spectrum of a threedimensional topological insulator is made up by an odd number of Dirac cones with the spin locked to the momentum. The long-sought yet elusive Majorana fermion is predicted to arise from a combination of a superconductor and a topological insulator. An essential step in the hunt for this emergent particle is the unequivocal observation of supercurrent in a topological phase. Here, we present the first measurement of a Josephson supercurrent through a topological insulator. Direct evidence for Josephson supercurrents in superconductor (Nb) - topological insulator (Bi2Te3) - superconductor e-beam fabricated junctions is provided by the observation of clear Shapiro steps under microwave irradiation, and a Fraunhofer-type dependence of the critical current on magnetic field. The dependence of the critical current on temperature and length shows that the junctions are in the ballistic limit. Shubnikov-de Haas oscillations in magnetic fields up to 30 T reveal a topologically non-trivial two-dimensional surface state. We argue that the ballistic Josephson current is hosted by this surface state despite the fact that the normal state transport is dominated by diffusive bulk conductivity. The lateral Nb-Bi2Te3-Nb junctions hence provide prospects for the realization of devices supporting Majorana fermions. △ Less

Submitted 15 December, 2011; originally announced December 2011.

Journal ref: Nature Materials 11,417-421 (2012)

The dynamical frustration of interlayer excitons delocalizing in bilayer quantum antiferromagnets

Authors: Louk Rademaker, Kai Wu, Hans Hilgenkamp, Jan Zaanen

Abstract: Using the self-consistent Born approximation we study the delocalization of interlayer excitons in the bilayer Heisenberg quantum antiferromagnet. Under realistic conditions we find that the coupling between the exciton motion and the spin system is strongly enhanced as compared to the case of a single carrier, to a degree that it mimics the confinement physics of carriers in Ising spin systems. W… ▽ More Using the self-consistent Born approximation we study the delocalization of interlayer excitons in the bilayer Heisenberg quantum antiferromagnet. Under realistic conditions we find that the coupling between the exciton motion and the spin system is strongly enhanced as compared to the case of a single carrier, to a degree that it mimics the confinement physics of carriers in Ising spin systems. We predict that the "ladder spectrum" associated with this confinement physics should be visible in the c-axis exciton spectra of insulating bilayer cuprates such as YBa2Cu3O6. Our discovery indicates that finite density systems of such excitons should show very rich physical behavior. △ Less

Submitted 20 January, 2012; v1 submitted 27 June, 2011; originally announced June 2011.

Comments: 6 pages, 6 figures. Updated version that has been submitted to Europhysics Letters

Journal ref: EPL 97, 27004 (2012)

Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films

Authors: M. van Zalk, A. Brinkman, H. Hilgenkamp

Abstract: We have performed a detailed study of conductance anisotropy and magnetoresistance (MR) of La2-xSrxCuO4 (LSCO) thin films (0.10 < x < 0.25). These two observables are promising for the detection of stripes. Subtle features of the conductance anisotropy are revealed by measuring the transverse resistance Rxy in zero magnetic field. It is demonstrated that the sign of Rxy depends on the orientation… ▽ More We have performed a detailed study of conductance anisotropy and magnetoresistance (MR) of La2-xSrxCuO4 (LSCO) thin films (0.10 < x < 0.25). These two observables are promising for the detection of stripes. Subtle features of the conductance anisotropy are revealed by measuring the transverse resistance Rxy in zero magnetic field. It is demonstrated that the sign of Rxy depends on the orientation of the LSCO Hall bar with respect to the terrace structure of the substrate. Unit-cell-high substrate step edges must therefore be a dominant nucleation source for antiphase boundaries during film growth. We show that the measurement of Rxy is sensitive enough to detect the cubic-tetragonal phase transition of the SrTiO3(100) (STO) substrate at 105 K. The MR of LSCO thin films shows for 0.10 < x < 0.25 a non-monotonic temperature dependence, resulting from the onset of a linear term in the MR above 90 K. We show that the linear MR scales with the absolute Hall resistivity, with the constant of proportionality independent of temperature. Such scaling suggests that the linear MR originates from current distortions induced by structural or electronic inhomogeneities. The possible role of stripes for both the MR and the conductance anisotropy is discussed throughout the paper. △ Less

Submitted 29 May, 2011; originally announced May 2011.

Journal ref: J. Phys.: Condens. Matter 23 (2011) 205602

Prediction of the quantization of magnetic flux in double layer exciton superfluids

Authors: Louk Rademaker, Jan Zaanen, Hans Hilgenkamp

Abstract: Currently a way is lacking to detect unambiguously the possible phase coherence of an exciton condensate in an electron-hole double layer. Here we show that despite the fact that excitons are charge-neutral, the double layer exciton superfluid exhibits a diamagnetic response. In devices with specific circular geometry the magnetic flux threading between the layers must be quantized in units of… ▽ More Currently a way is lacking to detect unambiguously the possible phase coherence of an exciton condensate in an electron-hole double layer. Here we show that despite the fact that excitons are charge-neutral, the double layer exciton superfluid exhibits a diamagnetic response. In devices with specific circular geometry the magnetic flux threading between the layers must be quantized in units of $\frac{h}{e} χ_m$ where $χ_m$ is the diamagnetic susceptibility of the device. We discuss possible experimental realizations of the predicted unconventional flux quantization. △ Less

Submitted 9 September, 2010; originally announced September 2010.

Comments: 4 pages, 3 figures

Journal ref: Phys.Rev.B83:012504,2011

Defect engineering in oxide heterostructures by enhanced oxygen surface exchange

Authors: M. Huijben, G. Koster, M. K. Kruize, S. Wenderich, J. Verbeeck, S. Bals, E. Slooten, B. Shi, H. J. A. Molegraaf, J. E. Kleibeuker, S. van Aert, J. B. Goedkoop, A. Brinkman, D. H. A. Blank, M. S. Golden, G. van Tendeloo, H. Hilgenkamp, G. Rijnders

Abstract: The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that… ▽ More The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both do** and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role. △ Less

Submitted 11 June, 2013; v1 submitted 11 August, 2010; originally announced August 2010.

Comments: Advanced Functional Materials (2013)

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

Authors: R. Pentcheva, M. Huijben, K. Otte, W. E. Pickett, J. E. Kleibeuker, J. Huijben, H. Boschker, D. Kockmann, W. Siemons, G. Koster, H. J. W. Zandvliet, G. Rijnders, D. H. A. Blank, H. Hilgenkamp, A. Brinkman

Abstract: The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO$_3$ cap** layer prevents structural and chemical reconstruction at the LaAlO$_3$ surface and triggers the electronic reconstruction at a signif… ▽ More The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO$_3$ cap** layer prevents structural and chemical reconstruction at the LaAlO$_3$ surface and triggers the electronic reconstruction at a significantly lower LaAlO$_3$ film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm. △ Less

Submitted 6 April, 2010; v1 submitted 23 December, 2009; originally announced December 2009.

Comments: Phys. Rev. Lett., in press

Imaging of order parameter induced $π$ phase shifts in cuprate superconductors by low-temperature scanning electron microscopy

Authors: Christian Gürlich, Edward Goldobin, Rainer Straub, Dietmar Doenitz, Ariando, Henk-Jan H. Smilde, Hans Hilgenkamp, Reinhold Kleiner, Dieter Koelle

Abstract: Low-temperature scanning electron microscopy (LTSEM) has been used to image the supercurrent distribution in ramp-type Josephson junctions between Nb and either the electron-doped cuprate Nd$_{2-x}$Ce$_x$CuO$_{4-y}$ or the hole-doped cuprate YBa$_2$Cu$_3$O$_7$. For zigzag-shaped devices in the short junction limit the critical current is strongly suppressed at zero applied magnetic field. The LT… ▽ More Low-temperature scanning electron microscopy (LTSEM) has been used to image the supercurrent distribution in ramp-type Josephson junctions between Nb and either the electron-doped cuprate Nd$_{2-x}$Ce$_x$CuO$_{4-y}$ or the hole-doped cuprate YBa$_2$Cu$_3$O$_7$. For zigzag-shaped devices in the short junction limit the critical current is strongly suppressed at zero applied magnetic field. The LTSEM images show, that this is due to the Josephson current counterflow in neighboring 0 and $π$ facets, which is induced by the $d_{x^2-y^2}$ order parameter in the cuprates. Thus, LTSEM provides imaging of the sign change of the superconducting order parameter, which can also be applied to other types of Josephson junctions. △ Less

Submitted 4 August, 2009; originally announced August 2009.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 103, 067011 (2009)

Dynamics of single vortices in grain boundaries: I-V characteristics on the femto-volt scale

Authors: B. Kalisky, J. R. Kirtley, E. A. Nowadnick, R. B. Dinner, E. Zeldov, Ariando, S. Wenderich, H. Hilgenkamp, D. M. Feldmann, K. A. Moler

Abstract: We employed a scanning Hall probe microscope to detect the hop** of individual vortices between pinning sites along grain boundaries in YBCO thin films in the presence of an applied current. Detecting the motion of individual vortices allowed us to probe the current-voltage (I-V) characteristics of the grain boundary with voltage sensitivity below a femto-volt. We find a very sharp onset of di… ▽ More We employed a scanning Hall probe microscope to detect the hop** of individual vortices between pinning sites along grain boundaries in YBCO thin films in the presence of an applied current. Detecting the motion of individual vortices allowed us to probe the current-voltage (I-V) characteristics of the grain boundary with voltage sensitivity below a femto-volt. We find a very sharp onset of dissipation with V~I^n with an unprecedented high exponent of n~290 that shows essentially no dependence on temperature or grain boundary angle. Our data have no straightforward explanation within the existing grain boundary transport models. △ Less

Submitted 18 March, 2009; originally announced March 2009.

Journal ref: Applied Physics Letters 94 202504 (2009)

In search for the superconducting spin-switch: Magnetization induced resistance switching effects in La$_{0.67}$Sr$_{0.33}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bi- and trilayers

Authors: M. van Zalk, M. Veldhorst, A. Brinkman, J. Aarts, H. Hilgenkamp

Abstract: We have studied the influence of the magnetization on the superconducting transition temperature ($T_c$) in bi- and trilayers consisting of the half-metallic ferromagnet La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) and the high-temperature superconductor YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO). We have made use of tilted epitaxial growth in order to achieve contacts between the two materials that are partly in th… ▽ More We have studied the influence of the magnetization on the superconducting transition temperature ($T_c$) in bi- and trilayers consisting of the half-metallic ferromagnet La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) and the high-temperature superconductor YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO). We have made use of tilted epitaxial growth in order to achieve contacts between the two materials that are partly in the crystallographic $ab$-plane of the YBCO. As a result of uniaxial magnetic anisotropy in the tilted structures, we observe sharp magnetization switching behavior. At temperatures close to $T_c$, the magnetization switching induces resistance jumps in trilayers, resulting in a magnetization dependence of $T_c$. In bilayers, this switching effect can be observed as well, provided that the interface to the ferromagnetic layer is considerably rough. Our results indicate that the switching behavior arises from magnetic stray fields from the ferromagnetic layers that penetrate into the superconductor. A simple model describes the observed behavior well. We find no evidence that the switching behavior is caused by a so-called superconducting spin-switch, nor by accumulation of spin-polarized electrons. Observation of magnetic coupling of the ferromagnetic layers, through the superconductor, supports the idea of field induced resistance switching. △ Less

Submitted 17 March, 2009; originally announced March 2009.

Comments: 11 pages, 12 figures

Journal ref: Phys. Rev. B, 79, 134509 (2009)