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Instrument for in situ hard x-ray nanobeam characterization during epitaxial crystallization and materials transformations
Authors:
Samuel D. Marks,
Peiyu Quan,
Rui Liu,
Matthew J. Highland,
Hua Zhou,
Thomas F. Keuch,
G. Brian Stephenson,
Paul G. Evans
Abstract:
Solid-phase epitaxy (SPE) and other three-dimensional epitaxial crystallization processes pose challenging structural and chemical characterization problems. The concentration of defects, the spatial distribution of elastic strain, and the chemical state of ions each vary with nanoscale characteristic length scales and depend sensitively on the gas environment and elastic boundary conditions durin…
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Solid-phase epitaxy (SPE) and other three-dimensional epitaxial crystallization processes pose challenging structural and chemical characterization problems. The concentration of defects, the spatial distribution of elastic strain, and the chemical state of ions each vary with nanoscale characteristic length scales and depend sensitively on the gas environment and elastic boundary conditions during growth. The lateral or three-dimensional propagation of crystalline interfaces in SPE has nanoscale or submicron characteristic distances during typical crystallization times. An in situ synchrotron hard x-ray instrument allows these features to be studied during deposition and crystallization using diffraction, resonant scattering, nanobeam and coherent diffraction imaging, and reflectivity. The instrument incorporates a compact deposition system allowing the use of short-working-distance x-ray focusing optics. Layers are deposited using radio-frequency magnetron sputtering and evaporation sources. The deposition system provides control of the gas atmosphere and sample temperature. The sample is positioned using a stable mechanical design to minimize vibration and drift and employs precise translation stages to enable nanobeam experiments. Results of in situ x-ray characterization of the amorphous thin film deposition process for a SrTiO3/BaTiO3 multilayer illustrate implementation of this instrument.
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Submitted 1 December, 2020;
originally announced December 2020.
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Burton-Cabrera-Frank theory for surfaces with alternating step types
Authors:
Guangxu Ju,
Dongwei Xu,
Carol Thompson,
Matthew J. Highland,
Jeffrey A. Eastman,
Weronika Walkosz,
Peter Zapol,
G. Brian Stephenson
Abstract:
Burton-Cabrera-Frank (BCF) theory has proven to be a versatile framework to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diffusion and attachment at steps. For an important class of crystal surfaces, including the basal planes of hexagonal close-packed and related systems, the steps in a sequence on a vicinal surface can exhibit properties tha…
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Burton-Cabrera-Frank (BCF) theory has proven to be a versatile framework to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diffusion and attachment at steps. For an important class of crystal surfaces, including the basal planes of hexagonal close-packed and related systems, the steps in a sequence on a vicinal surface can exhibit properties that alternate from step to step. Here we develop BCF theory for such surfaces, relating observables such as alternating terrace widths as a function of growth conditions to the kinetic coefficients for adatom attachment at steps. We include the effects of step transparency and step-step repulsion. A general solution is obtained for the dynamics of the terrace widths, assuming quasi-steady-state adatom distributions on the terraces. An explicit simplified analytical solution is obtained under widely applicable approximations. From this we obtain expressions for the full-steady-state terrace fraction as a function of growth rate. Fits of the theoretical predictions to recent experimental determinations of the steady-state and dynamics of terrace fractions on GaN (0001) surfaces during organo-metallic vapor phase epitaxy give values of the kinetic coefficients for this system. In Appendices, we also connect a model for diffusion between kinks on steps to the model for diffusion between steps on terraces, which quantitatively relates step transparency to the kinetics of atom attachment at kinks, and consider limiting cases of diffusion-limited, attachment-limited, and mixed kinetics.
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Submitted 26 January, 2022; v1 submitted 15 October, 2020;
originally announced October 2020.
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Crystal Truncation Rods from Miscut Surfaces with Alternating Terminations
Authors:
Guangxu Ju,
Dongwei Xu,
Carol Thompson,
Matthew J. Highland,
Jeffrey A. Eastman,
Weronika Walkosz,
Peter Zapol,
G. Brian Stephenson
Abstract:
Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crystal structures with an αβαβ stacking sequence, there have been long-standing questions regarding how the differences in adatom attachment kinetics at the steps separating the terraces affect the fractional coverage of α vs…
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Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crystal structures with an αβαβ stacking sequence, there have been long-standing questions regarding how the differences in adatom attachment kinetics at the steps separating the terraces affect the fractional coverage of α vs. β termination during crystal growth. To demonstrate how surface X-ray scattering can help address these questions, we develop a general theory for the intensity distributions along crystal truncation rods (CTRs) for miscut surfaces with a combination of two terminations. We consider half-unit-cell-height steps, and variation of the coverages of the terraces above each step. Example calculations are presented for the GaN (0001) surface with various reconstructions. These show which CTR positions are most sensitive to the fractional coverage of the two terminations. We compare the CTR profiles for exactly oriented surfaces to those for vicinal surfaces having a small miscut angle, and investigate the circumstances under which the CTR profile for an exactly oriented surface is equal to the sum of the intensities of the corresponding family of CTRs for a miscut surface.
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Submitted 22 February, 2021; v1 submitted 11 October, 2020;
originally announced October 2020.
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In Situ Microbeam Surface X-ray Scattering Reveals Alternating Step Kinetics During Crystal Growth
Authors:
Guangxu Ju,
Dongwei Xu,
Carol Thompson,
Matthew J. Highland,
Jeffrey A. Eastman,
Weronika Walkosz,
Peter Zapol,
G. Brian Stephenson
Abstract:
The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different growth kinetics. However, because it is difficult to experimentally identify which step has the A or B structure, it has not been possible to determine which has faster adatom attachment kinetics. Here we show that in sit…
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The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different growth kinetics. However, because it is difficult to experimentally identify which step has the A or B structure, it has not been possible to determine which has faster adatom attachment kinetics. Here we show that in situ microbeam surface X-ray scattering can determine whether A or B steps have faster kinetics under specific growth conditions. We demonstrate this for organo-metallic vapor phase epitaxy of (0001) GaN. X-ray measurements performed during growth find that the average width of terraces above A steps increases with growth rate, indicating that attachment rate constants are higher for A steps, in contrast to most predictions. Our results have direct implications for understanding the atomic-scale mechanisms of GaN growth and can be applied to a wide variety of related crystals.
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Submitted 20 February, 2021; v1 submitted 9 July, 2020;
originally announced July 2020.
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Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy
Authors:
Guangxu Ju,
Dongwei Xu,
Carol Thompson,
Matthew J. Highland,
Jeffrey A. Eastman,
Weronika Walkosz,
Peter Zapol,
G. Brian Stephenson
Abstract:
Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be explained by the $αβαβ$ stacking sequence of the wurtzite crystal structure, which results in steps with alternating $A$ and $B$ edge structures for the lowest energy step azimuths, i.e. steps normal to $[0 1 \bar{1} 0]$ typ…
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Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be explained by the $αβαβ$ stacking sequence of the wurtzite crystal structure, which results in steps with alternating $A$ and $B$ edge structures for the lowest energy step azimuths, i.e. steps normal to $[0 1 \bar{1} 0]$ type directions. Predicted differences in the adatom attachment kinetics at $A$ and $B$ steps would lead to alternating $α$ and $β$ terrace widths. However, because of the difficulty of experimentally identifying which step is $A$ or $B$, it has not been possible to determine the absolute difference in their behavior, e.g. which step has higher adatom attachment rate constants. Here we show that surface X-ray scattering can measure the fraction of $α$ and $β$ terraces, and thus unambiguously differentiate the growth dynamics of $A$ and $B$ steps. We first present calculations of the intensity profiles of GaN crystal truncation rods (CTRs) that demonstrate a marked dependence on the $α$ terrace fraction $f_α$. We then present surface X-ray scattering measurements performed \textit{in situ} during homoepitaxial growth on (0001) GaN by vapor phase epitaxy. By analyzing the shapes of the $(1 0 \bar{1} L)$ and $(0 1 \bar{1} L)$ CTRs, we determine that the steady-state $f_α$ increases at higher growth rate, indicating that attachment rate constants are higher at $A$ steps than at $B$ steps. We also observe the dynamics of $f_α$ after growth conditions are changed. The results are analyzed using a Burton-Cabrera-Frank model for a surface with alternating step types, to extract values for the kinetic parameters of $A$ and $B$ steps. These are compared with predictions for GaN (0001).
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Submitted 9 July, 2020;
originally announced July 2020.
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High-energy coherent X-ray diffraction microscopy of polycrystal grains: first steps towards a multi-scale approach
Authors:
Siddharth Maddali,
Jun-Sang Park,
Hemant Sharma,
Sarvjit Shastri,
Peter Kenesei,
Jonathan Almer,
Ross Harder,
Matthew J. Highland,
Youssef S. G. Nashed,
Stephan O. Hruszkewycz
Abstract:
We present proof-of-concept imaging measurements of a polycrystalline material that integrate the elements of conventional high-energy X-ray diffraction microscopy with coherent diffraction imaging techniques, and that can enable in-situ strain-sensitive imaging of lattice structure in ensembles of deeply embedded crystals over five decades of length scale upon full realization. Such multi-scale i…
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We present proof-of-concept imaging measurements of a polycrystalline material that integrate the elements of conventional high-energy X-ray diffraction microscopy with coherent diffraction imaging techniques, and that can enable in-situ strain-sensitive imaging of lattice structure in ensembles of deeply embedded crystals over five decades of length scale upon full realization. Such multi-scale imaging capabilities are critical to addressing important questions in a variety of research areas such as materials science and engineering, chemistry, and solid state physics. Towards this eventual goal, the following key aspects are demonstrated: 1) high-energy Bragg coherent diffraction imaging (HE-BCDI) of sub-micron-scale crystallites at 52 keV at current third-generation synchrotron light sources, 2) HE-BCDI performed in conjunction with far-field high-energy diffraction microscopy (ff-HEDM) on the grains of a polycrystalline sample in an smoothly integrated manner, and 3) the orientation information of an ensemble of grains obtained via ff-HEDM used to perform complementary HE-BCDI on multiple Bragg reflections of a single targeted grain. These steps lay the foundation for integration of HE-BCDI, which typically provides a spatial resolution tens of nanometers, into a broad suite of well-established HEDM methods, extending HEDM beyond the few-micrometer resolution bound and into the nanoscale, and positioning the approach to take full advantage of the orders-of-magnitude improvement of X-ray coherence expected at fourth generation light sources presently being built and commissioned worldwide.
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Submitted 17 April, 2019; v1 submitted 28 March, 2019;
originally announced March 2019.
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Persistence of Island Arrangements During Layer-by-Layer Growth Revealed Using Coherent X-rays
Authors:
Guangxu Ju,
Dongwei Xu,
Matthew J. Highland,
Carol Thompson,
Hua Zhou,
Jeffrey A. Eastman,
Paul H. Fuoss,
Peter Zapol,
Hyunjung Kim,
G. Brian Stephenson
Abstract:
Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) using coherent x-rays opens new opportunities for in situ observation of atomic-scale fluctuation dynamics during crystal growth. Here, we present the first XPCS measurements of 2D island dynamics during homoepitaxial growth…
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Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) using coherent x-rays opens new opportunities for in situ observation of atomic-scale fluctuation dynamics during crystal growth. Here, we present the first XPCS measurements of 2D island dynamics during homoepitaxial growth in the layer-by-layer mode. Analysis of the results using two-time correlations reveals a new phenomenon - a memory effect in island nucleation sites on successive crystal layers. Simulations indicate that this persistence in the island arrangements arises from communication between islands on different layers via adatoms. With the worldwide advent of new coherent x-ray sources, the XPCS methods pioneered here will be widely applicable to atomic-scale processes on surfaces.
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Submitted 22 April, 2018;
originally announced April 2018.
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Characterization of the X-ray Coherence Properties of an Undulator Beamline at the Advanced Photon Source
Authors:
Guangxu Ju,
Matthew J. Highland,
Carol Thompson,
Jeffrey A. Eastman,
Paul H. Fuoss,
Hua Zhou,
Roger Dejus,
G. Brian Stephenson
Abstract:
In anticipation of the increased use of coherent x-ray methods and the need to upgrade beamlines to match improved source quality, we have characterized the coherence properties of the x-rays delivered by beamline 12ID-D at the Advanced Photon Source. We compare the measured x-ray divergence, beam size, brightness, and coherent flux at energies up to 26 keV to the calculated values from the undula…
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In anticipation of the increased use of coherent x-ray methods and the need to upgrade beamlines to match improved source quality, we have characterized the coherence properties of the x-rays delivered by beamline 12ID-D at the Advanced Photon Source. We compare the measured x-ray divergence, beam size, brightness, and coherent flux at energies up to 26 keV to the calculated values from the undulator source, and evaluate the effects of beamline optics such as a mirror, monochromator, and compound refractive lenses. Diffraction patterns from slits as a function of slit width are analyzed using wave propagation theory to obtain the beam divergence and thus coherence length. Imaging of the source using a compound refractive lens was found to be the most accurate method for determining the vertical divergence. While the brightness and coherent flux obtained without a monochromator ("pink beam") agree well with those calculated for the source, those measured with the monochromator were a factor of 3 to 6 lower than the source, primarily because of vertical divergence introduced by the monochromator. The methods we describe should be widely applicable for measuring the x-ray coherence properties of synchrotron beamlines.
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Submitted 15 February, 2018;
originally announced February 2018.
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Real-time X-ray Monitoring of the Nucleation and Growth of AlN Epitaxial Films on Sapphire (0001)
Authors:
Guangxu Ju,
Matthew J. Highland,
Jeffrey A. Eastman,
Rebecca Sichel-Tissot,
Peter M. Baldo,
Peter Zapol,
Paul H. Fuoss
Abstract:
We report the results of x-ray scattering studies of AlN on c-plane sapphire during reactive radiofrequency magnetron sputtering. The sensitivity of in situ x-ray measurements allowed us to follow the structural evolution of strain and roughness from initial nucleation layers to fullyrelaxed AlN films. A growth rate transient was observed, consistent with the initial formation of non-coalesced isl…
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We report the results of x-ray scattering studies of AlN on c-plane sapphire during reactive radiofrequency magnetron sputtering. The sensitivity of in situ x-ray measurements allowed us to follow the structural evolution of strain and roughness from initial nucleation layers to fullyrelaxed AlN films. A growth rate transient was observed, consistent with the initial formation of non-coalesced islands with significant oxygen incorporation from the substrate. Following island coalescence, a steady state growth rate was seen with a continuous shift of the c and a lattice parameters towards the relaxed bulk values as growth progressed, with films reaching a fully relaxed state at thicknesses of about 30 nm.
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Submitted 6 September, 2017;
originally announced September 2017.
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Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN
Authors:
Edith Perret,
Dongwei Xu,
M. J. Highland,
G. B. Stephenson,
P. Zapol,
P. H. Fuoss,
A. Munkholm,
Carol Thompson
Abstract:
Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1 $\overline{2}$ 10] and closely…
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Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1 $\overline{2}$ 10] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate G and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate G$^{-n}$, with an exponent $n = 0.25 \pm 0.02$. Results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.
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Submitted 29 June, 2017;
originally announced June 2017.
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An instrument for advanced in situ x-ray studies of metal-organic vapor phase epitaxy of III-nitrides
Authors:
Guangxu Ju,
Matthew J. Highland,
Angel Yanguas-Gil,
Carol Thompson,
Jeffrey A. Eastman,
Hua Zhou,
Sean M. Brennan,
G. Brian Stephenson,
Paul H. Fuoss
Abstract:
We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffra…
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We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.
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Submitted 14 May, 2017; v1 submitted 9 February, 2017;
originally announced February 2017.
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Stability Limits and Surface Chemistry of Ag Nanoparticles in Non-Adsorbing Electrolytes Probed by Bragg Coherent Diffractive Imaging
Authors:
Y. Liu,
P. P. Lopes,
W. Cha,
R. Harder,
J. Maser,
E. Maxey,
M. J. Highland,
N. Markovic,
S. Hruszkewycz,
G. B. Stephenson,
H. You,
A. Ulvestad
Abstract:
Surface chemistry is important across diverse fields such as corrosion and nanostructure synthesis. Unfortunately, many as-synthesized nanomaterials, including partially dealloyed nanoparticle catalysts for fuel cells, with highly active surfaces are not stable in their reactive environments, preventing widespread application. Thus, understanding instability by focusing on the structure-stability…
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Surface chemistry is important across diverse fields such as corrosion and nanostructure synthesis. Unfortunately, many as-synthesized nanomaterials, including partially dealloyed nanoparticle catalysts for fuel cells, with highly active surfaces are not stable in their reactive environments, preventing widespread application. Thus, understanding instability by focusing on the structure-stability and defect-stability relationship at the nanoscale is crucial and will likely play an important role in meeting grand challenges. To this end, recent advances in imaging nanostructure stability have come via both electron, x-ray, and other techniques such as atomic force microscopy, but tend to be limited to specific sample environments and/or two-dimensional images. Here, we report investigations into the defect-stability relationship of silver nanoparticles to voltage-induced electrochemical dissolution imaged in-situ in three-dimensional (3D) detail by Bragg Coherent Diffractive Imaging (BCDI). We first determine the average dissolution kinetics by Stationary Probe Rotating Disk Electrode (SPRDE) in combination with inductively coupled plasma mass spectrometry (ICP-MS), which allows real-time in-situ measurement of Ag+ ions formation and the corresponding electrochemical current. We then observe the dissolution and redeposition processes in 3D with BCDI in single nanocrystals, providing unique insight about the role of surface strain, defects, and their coupling to the dissolution chemistry. The methods developed and the knowledge gained go well beyond a "simple" silver electrochemistry and are applicable to all electrocatalytic reactions where functional links between activity and stability are controlled by structure and defect dynamics.
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Submitted 11 October, 2016;
originally announced October 2016.
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Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO$_3$
Authors:
F. Chen,
Y. Zhu,
S. Liu,
Y. Qi,
H. Y. Hwang,
N. C. Brandt,
J. Lu,
F. Quirin,
H. Enquist,
P. Zalden,
T. Hu,
J. Goodfellow,
M. -J. Sher,
M. C. Hoffmann,
D. Zhu,
H. Lemke,
J. Glownia,
M. Chollet,
A. R. Damodaran,
J. Park,
Z. Cai,
I. W. Jung,
M. J. Highland,
D. A. Walko,
J. W. Freeland
, et al. (9 additional authors not shown)
Abstract:
The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here we apply sub-picosecond duration, single-cycle terahertz pulses as an ultrafast electric field bias to prototypical BaTiO$_3$ ferroelectric thin films with the atomic-sc…
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The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here we apply sub-picosecond duration, single-cycle terahertz pulses as an ultrafast electric field bias to prototypical BaTiO$_3$ ferroelectric thin films with the atomic-scale response probed by femtosecond x-ray scattering techniques. We show that electric fields applied perpendicular to the ferroelectric polarization drive large amplitude displacements of the titanium atoms along the ferroelectric polarization axis, comparable to that of the built-in displacements associated with the intrinsic polarization and incoherent across unit cells. This effect is associated with a dynamic rotation of the ferroelectric polarization switching on and then off on picosecond timescales. These transient polarization modulations are followed by long-lived vibrational heating effects driven by resonant excitation of the ferroelectric soft mode, as reflected in changes in the c-axis tetragonality. The ultrafast structural characterization described here enables direct comparison with first-principles-based molecular dynamics simulations, with good agreement obtained.
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Submitted 31 October, 2016; v1 submitted 30 August, 2016;
originally announced August 2016.
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Mesoscopic structural phase progression in photo-excited VO2 revealed by time-resolved x-ray diffraction microscopy
Authors:
Yi Zhu,
Zhonghou Cai,
Pice Chen,
Qingteng Zhang,
Matthew J. Highland,
Il Woong Jung,
Donald A. Walko,
Eric M. Dufresne,
Jaewoo Jeong,
Mahesh G. Samant,
Stuart S. P. Parkin,
John W. Freeland,
Paul G. Evans,
Haidan Wen
Abstract:
Dynamical phase separation during a solid-solid phase transition poses a challenge for understanding the fundamental processes in correlated materials. Critical information underlying a phase transition, such as localized phase competition, is difficult to reveal by measurements that are spatially averaged over many phase separated regions. The ability to simultaneously track the spatial and tempo…
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Dynamical phase separation during a solid-solid phase transition poses a challenge for understanding the fundamental processes in correlated materials. Critical information underlying a phase transition, such as localized phase competition, is difficult to reveal by measurements that are spatially averaged over many phase separated regions. The ability to simultaneously track the spatial and temporal evolution of such systems is essential to understanding mesoscopic processes during a phase transition. Using state-of-the-art time-resolved hard x-ray diffraction microscopy, we directly visualize the structural phase progression in a VO2 film upon photoexcitation. Following a homogenous in-plane optical excitation, the phase transformation is initiated at discrete sites and completed by the growth of one lattice structure into the other, instead of a simultaneous isotropic lattice symmetry change. The time-dependent x-ray diffraction spatial maps show that the in-plane phase progression in laser-superheated VO2 is via a displacive lattice transformation as a result of relaxation from an excited monoclinic phase into a rutile phase. The speed of the phase front progression is quantitatively measured, and is faster than the process driven by in-plane thermal diffusion but slower than the sound speed in VO2. The direct visualization of localized structural changes in the time domain opens a new avenue to study mesoscopic processes in driven systems.
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Submitted 10 February, 2016; v1 submitted 15 October, 2015;
originally announced October 2015.
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Equilibrium and Stability of Polarization in Ultrathin Ferroelectric Films with Ionic Surface Compensation
Authors:
G. Brian Stephenson,
Matthew J. Highland
Abstract:
Thermodynamic theory is developed for the ferroelectric phase transition of an ultrathin film in equilibrium with a chemical environment that supplies ionic species to compensate its surface. Equations of state and free energy expressions are developed based on Landau-Ginzburg-Devonshire theory, using electrochemical equilibria to provide ionic compensation boundary conditions. Calculations are pr…
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Thermodynamic theory is developed for the ferroelectric phase transition of an ultrathin film in equilibrium with a chemical environment that supplies ionic species to compensate its surface. Equations of state and free energy expressions are developed based on Landau-Ginzburg-Devonshire theory, using electrochemical equilibria to provide ionic compensation boundary conditions. Calculations are presented for a monodomain PbTiO$_3$ (001) film coherently strained to SrTiO$_3$ with its exposed surface and its electronically conducting bottom electrode in equilibrium with a controlled oxygen partial pressure. The stability and metastability boundaries of phases of different polarization are determined as a function of temperature, oxygen partial pressure, and film thickness. Phase diagrams showing polarization and internal electric field are presented. At temperatures below a thickness-dependent Curie point, high or low oxygen partial pressure stabilizes positive or negative polarization, respectively. Results are compared to the standard cases of electronic compensation controlled by either an applied voltage or charge across two electrodes. Ionic surface compensation through chemical equilibrium with an environment introduces new features into the phase diagram. In ultrathin films, a stable non-polar phase can occur between the positive and negative polar phases when varying the external chemical potential at fixed temperature, under conditions where charged surface species are not present in sufficient concentration to stabilize a polar phase.
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Submitted 30 July, 2011; v1 submitted 31 December, 2010;
originally announced January 2011.
