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Nanoparticle seeded glancing-angle deposition of tip-handle heterostructures for manipulation of individual nanoparticles
Authors:
Kai Trepka,
Govind Bindra,
Haley Langan,
Jessica Lin,
Kristina Linko,
Henry Tsang,
Nare Janvelyan,
Fanny Hiebel,
Ye Tao
Abstract:
The controllable handling of an arbitrary single particle of matter with sub-100 nanometer (nm) dimensions is an essential but unsolved scientific challenge. We demonstrate nanoparticle-seeded glancing angle deposition using 10-100 nm diameter nanoparticle seeds (Er2O3, Fe@C, and Fe). The products are nanoparticle-nanowire heterostructures composed of arbitrary nanoscale tips attached to micron-le…
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The controllable handling of an arbitrary single particle of matter with sub-100 nanometer (nm) dimensions is an essential but unsolved scientific challenge. We demonstrate nanoparticle-seeded glancing angle deposition using 10-100 nm diameter nanoparticle seeds (Er2O3, Fe@C, and Fe). The products are nanoparticle-nanowire heterostructures composed of arbitrary nanoscale tips attached to micron-length nanowire handles. Optical micromanipulation of the micron-scale handles enables concurrent manipulation of the attached nanoscale particles of matter.
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Submitted 31 December, 2020; v1 submitted 26 December, 2020;
originally announced December 2020.
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Single 3$d$ transition metal atoms on multi-layer graphene systems: electronic configurations, bonding mechanisms and role of the substrate
Authors:
V. Sessi,
S. Stepanow,
A. N. Rudenko,
S. Krotzky,
K. Kern,
F. Hiebel,
P. Mallet,
J. -Y. Veuillen,
O. Sipr,
J. Honolka,
N. B. Brookes
Abstract:
The electronic configurations of Fe, Co, Ni, and Cu adatoms on graphene and graphite have been studied by x-ray magnetic circular dichroism and charge transfer multiplet theory. A delicate interplay between long-range interactions and local chemical bonding is found to influence the adatom equilibrium distance and magnetic moment. The results for Fe and Co are consistent with purely physisorbed sp…
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The electronic configurations of Fe, Co, Ni, and Cu adatoms on graphene and graphite have been studied by x-ray magnetic circular dichroism and charge transfer multiplet theory. A delicate interplay between long-range interactions and local chemical bonding is found to influence the adatom equilibrium distance and magnetic moment. The results for Fe and Co are consistent with purely physisorbed species having, however, different 3$d$-shell occupancies on graphene and graphite ($d^{n+1}$ and $d^n$, respectively). On the other hand, for the late 3$d$ metals Ni and Cu a trend towards chemisorption is found, which strongly quenches the magnetic moment on both substrates.
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Submitted 30 April, 2014;
originally announced April 2014.
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Impact of local stacking on the graphene-impurity interaction: theory and experiments
Authors:
F. Hiebel,
P. Mallet,
J. -Y. Veuillen,
L. Magaud
Abstract:
We investigate the graphene-impurity interaction problem by combining experimental - scanning tunneling microscopy (STM) and spectroscopy (STS) - and theoretical - Anderson impurity model and density functional theory (DFT) calculations - techniques. We use graphene on the SiC(000-1)(2x2)_C reconstruction as a model system. The SiC substrate reconstruction is based on silicon adatoms. Graphene mai…
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We investigate the graphene-impurity interaction problem by combining experimental - scanning tunneling microscopy (STM) and spectroscopy (STS) - and theoretical - Anderson impurity model and density functional theory (DFT) calculations - techniques. We use graphene on the SiC(000-1)(2x2)_C reconstruction as a model system. The SiC substrate reconstruction is based on silicon adatoms. Graphene mainly interacts with the dangling bonds of these adatoms which act as impurities. Graphene grown on SiC(000-1)(2x2)_C shows domains with various orientations relative to the substrate so that very different local graphene/Si adatom stacking configurations can be probed on a given grain. The position and width of the adatom (impurity) state can be analyzed by STM/STS and related to its local environment owing to the high bias electronic transparency of graphene. The experimental results are compared to Anderson's model predictions and complemented by DFT calculations for some specific local environments. We conclude that the adatom resonance shows a smaller width and a larger shift toward the Dirac point for an adatom at the center of a graphene hexagon than for an adatom just on top of a C graphene atom.
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Submitted 9 November, 2012; v1 submitted 8 November, 2012;
originally announced November 2012.
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Epitaxial graphene morphologies probed by weak (anti)-localization
Authors:
Ather Mahmood,
Cécile Naud,
Clément Bouvier,
Fanny Hiebel,
Pierre Mallet,
Jean-Yves Veuillen,
Laurent Levy,
Didier Chaussende,
Thierry Ouisse
Abstract:
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferr…
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We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].
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Submitted 1 March, 2013; v1 submitted 8 June, 2012;
originally announced June 2012.
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Electronic and structural characterization of divacancies in irradiated graphene
Authors:
Miguel M. Ugeda,
Iván Brihuega,
Fanny Hiebel,
Pierre Mallet,
Jean-Yves Veuillen,
José M. Gómez-Rodríguez,
Félix Ynduráin
Abstract:
We provide a thorough study of a carbon divacancy, a fundamental but almost unexplored point defect in graphene. Low temperature scanning tunneling microscopy (STM) imaging of irradiated graphene on different substrates enabled us to identify a common two-fold symmetry point defect. Our first principles calculations reveal that the structure of this type of defect accommodates two adjacent missing…
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We provide a thorough study of a carbon divacancy, a fundamental but almost unexplored point defect in graphene. Low temperature scanning tunneling microscopy (STM) imaging of irradiated graphene on different substrates enabled us to identify a common two-fold symmetry point defect. Our first principles calculations reveal that the structure of this type of defect accommodates two adjacent missing atoms in a rearranged atomic network formed by two pentagons and one octagon, with no dangling bonds. Scanning tunneling spectroscopy (STS) measurements on divacancies generated in nearly ideal graphene show an electronic spectrum dominated by an empty-states resonance, which is ascribed to a spin-degenerated nearly flat band of $π$-electron nature. While the calculated electronic structure rules out the formation of a magnetic moment around the divacancy, the generation of an electronic resonance near the Fermi level, reveals divacancies as key point defects for tuning electron transport properties in graphene systems.
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Submitted 23 December, 2011;
originally announced December 2011.
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Graphene on the carbon face of SiC: electronic structure modification by hydrogen intercalation
Authors:
F. Hiebel,
P. Mallet,
J. -Y. Veuillen,
L. Magaud
Abstract:
It has been shown that the first C layer on the SiC(0001)(2{\times}2)C surface already exhibits graphene-like electronic structure, with linear pi bands near the Dirac point. Indeed, the (2{\times}2)C reconstruction, with a Si adatom and C restatom structure, efficiently passivates the SiC(0001) surface thanks to an adatom/restatom charge transfer mechanism. Here, we study the effects of interface…
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It has been shown that the first C layer on the SiC(0001)(2{\times}2)C surface already exhibits graphene-like electronic structure, with linear pi bands near the Dirac point. Indeed, the (2{\times}2)C reconstruction, with a Si adatom and C restatom structure, efficiently passivates the SiC(0001) surface thanks to an adatom/restatom charge transfer mechanism. Here, we study the effects of interface modifications on the graphene layer using density functional theory calculations. The modifications we consider are inspired from native interface defects observed by scanning tunneling microscopy. One H atom per 4 {\times} 4 SiC cell (5 {\times} 5 graphene cell) is introduced in order to saturate a restatom dangling bond and hinder the adatom/restatom charge transfer. As a consequence, the graphene layer is doped with electrons from the substrate and the interaction with the adatom states slightly increases. Native interface defects are therefore likely to play an important role in the do** mechanism on the C terminated SiC substrates. We also conclude that an efficient passivation of the C face of SiC by H requires a complete removal of the reconstruction. Otherwise, at variance with the Si terminated SiC substrates, the presence of H at the interface would increase the graphene/substrate interaction.
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Submitted 18 February, 2011;
originally announced February 2011.
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Atomic and electronic structure of monolayer graphene on 6H-SiC(000-1)(3 x 3) : a scanning tunneling microscopy study
Authors:
F. Hiebel,
P. Mallet,
L. Magaud,
J. -Y. Veuillen
Abstract:
We present an investigation of the atomic and electronic structure of graphene monolayer islands on the 6H-SiC(000-1)(3x3) (SiC(3x3)) surface reconstruction using scanning tunneling microscopy (STM) and spectroscopy (STS). The orientation of the graphene lattice changes from one island to the other. In the STM images, this rotational disorder gives rise to various superlattices with periods in t…
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We present an investigation of the atomic and electronic structure of graphene monolayer islands on the 6H-SiC(000-1)(3x3) (SiC(3x3)) surface reconstruction using scanning tunneling microscopy (STM) and spectroscopy (STS). The orientation of the graphene lattice changes from one island to the other. In the STM images, this rotational disorder gives rise to various superlattices with periods in the nm range. We show that those superlattices are moiré patterns (MPs) and we correlate their apparent height with the stacking at the graphene/SiC(3x3) interface. The contrast of the MP in STM images corresponds to a small topographic modulation of the graphene layer.
From STS measurements we find that the substrate surface presents a 1,5 eV wide bandgap encompassing the Fermi level. This substrate surface bandgap subsists below the graphene plane. The tunneling spectra are spatially homogeneous on the islands within the substrate surface gap, which shows that the MPs do not impact the low energy electronic structure of graphene. We conclude that the SiC(3 x 3) reconstruction efficiently passivates the substrate surface and that the properties of the graphene layer which grows on top of it should be similar to those of the ideal material.
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Submitted 4 December, 2009;
originally announced December 2009.
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How the SiC substrate impacts graphene atomic and electronic structures
Authors:
L. Magaud,
F. Hiebel,
F. Varchon,
P. Mallet,
J. -Y. Veuillen
Abstract:
Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by a substrate. We focus here on the graphene-on-SiC system to discuss how the SiC substrate interacts with the graphene layer and to show the effect of the inte…
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Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by a substrate. We focus here on the graphene-on-SiC system to discuss how the SiC substrate interacts with the graphene layer and to show the effect of the interface on graphene atomic and electronic structures.
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Submitted 9 June, 2009;
originally announced June 2009.
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Graphene on the C-terminated SiC (000 $\bar{1}$) surface: An ab initio study
Authors:
L. Magaud,
F. Hiebel,
F. Varchon,
P. Mallet,
J. -Y. Veuillen
Abstract:
The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here. Si adatoms passivate the substrate surface so that the very first C layer presents a linear dispersion characteristic of graphene. A small graphene-substrate…
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The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here. Si adatoms passivate the substrate surface so that the very first C layer presents a linear dispersion characteristic of graphene. A small graphene-substrate interaction remains in agreement with scanning tunneling experiments (F.Hiebel et al. {\it Phys. Rev. B} {\bf 78} 153412 (2008)). The stacking geometry has little influence on the interaction which explains the rotational disorder observed on this face.
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Submitted 10 February, 2009;
originally announced February 2009.
