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Characterization of iLGADs using soft X-rays
Authors:
Antonio Liguori,
Rebecca Barten,
Filippo Baruffaldi,
Anna Bergamaschi,
Giacomo Borghi,
Maurizio Boscardin,
Martin Brückner,
Tim Alexander Butcher,
Maria Carulla,
Matteo Centis Vignali,
Roberto Dinapoli,
Simon Ebner,
Francesco Ficorella,
Erik Fröjdh,
Dominic Greiffenberg,
Omar Hammad Ali,
Shqipe Hasanaj,
Julian Heymes,
Viktoria Hinger,
Thomas King,
Pawel Kozlowski,
Carlos Lopez-Cuenca,
Davide Mezza,
Konstantinos Moustakas,
Aldo Mozzanica
, et al. (9 additional authors not shown)
Abstract:
Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft X-ray energy range ($250$eV--$2$keV) stand to benefit from the adaptation of the hybrid silicon detector technology for low energy photons. Inverse Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain, enhancing the signal-to-noise ratio and allowing single photon detection below $1$keV using hybri…
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Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft X-ray energy range ($250$eV--$2$keV) stand to benefit from the adaptation of the hybrid silicon detector technology for low energy photons. Inverse Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain, enhancing the signal-to-noise ratio and allowing single photon detection below $1$keV using hybrid detectors. In addition, an optimization of the entrance window of these sensors enhances their quantum efficiency (QE). In this work, the QE and the gain of a batch of different iLGAD diodes with optimized entrance windows were characterized using soft X-rays at the Surface/Interface:Microscopy beamline of the Swiss Light Source synchrotron. Above $250$eV, the QE is larger than $55\%$ for all sensor variations, while the charge collection efficiency is close to $100\%$. The average gain depends on the gain layer design of the iLGADs and increases with photon energy. A fitting procedure is introduced to extract the multiplication factor as a function of the absorption depth of X-ray photons inside the sensors. In particular, the multiplication factors for electron- and hole-triggered avalanches are estimated, corresponding to photon absorption beyond or before the gain layer, respectively.
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Submitted 23 October, 2023;
originally announced October 2023.
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Detection of MeV electrons using a charge integrating hybrid pixel detector
Authors:
E. Fröjdh,
F. Baruffaldi,
A. Bergamaschi,
M. Carulla,
R. Dinapoli,
D. Greiffenberg,
J. Heymes,
V. Hinger,
R. Ischebeck,
S. Mathisen,
J. McKenzie,
D. Mezza,
K. Moustakas,
A. Mozzanica,
B. Schmitt,
J. Zhang
Abstract:
Electrons are emerging as a strong complement to X-rays for diffraction based studies. In this paper we investigate the performance of a JUNGFRAU detector with 320 um thick silicon sensor at a pulsed electron source. Originally developed for X-ray detection at free electron lasers, JUNGFRAU features a dynamic range of 120 MeV/pixel (implemented with in-pixel gain switching) which translated to abo…
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Electrons are emerging as a strong complement to X-rays for diffraction based studies. In this paper we investigate the performance of a JUNGFRAU detector with 320 um thick silicon sensor at a pulsed electron source. Originally developed for X-ray detection at free electron lasers, JUNGFRAU features a dynamic range of 120 MeV/pixel (implemented with in-pixel gain switching) which translated to about 1200 incident electrons per pixel and frame in the MeV region. We preset basic characteristics such as energy deposited per incident particle, resulting cluster size and spatial resolution along with dynamic (intensity) range scans. Measurements were performed at 4, 10 and 20 MeV/c. We compare the measurements with GEANT4 based simulations and extrapolate the results to different sensor thicknesses using these simulations.
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Submitted 28 October, 2022;
originally announced October 2022.
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Development of LGAD sensors with a thin entrance window for soft X-ray detection
Authors:
Jiaguo Zhang,
Rebecca Barten,
Filippo Baruffaldi,
Anna Bergamaschi,
Giacomo Borghi,
Maurizio Boscardin,
Martin Brueckner,
Maria Carulla,
Matteo Centis Vignali,
Roberto Dinapoli,
Simon Ebner,
Francesco Ficorella,
Erik Froejdh,
Dominic Greiffenberg,
Omar Hammad Ali,
Julian Heymes,
Shqipe Hasanaj,
Viktoria Hinger,
Thomas King,
Pawel Kozlowski,
Carlos Lopez-Cuenca,
Davide Mezza,
Konstantinos Moustakas,
Aldo Mozzanica,
Giovanni Paternoster
, et al. (4 additional authors not shown)
Abstract:
We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the sof…
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We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the soft X-ray energy range possible. In this paper, we report first results obtained from an LGAD sensor production with an optimized thin entrance window. Single photon detection of soft X-rays down to 452~eV has been demonstrated from measurements, with a signal-to-noise ratio better than 20.
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Submitted 24 October, 2022;
originally announced October 2022.
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On drift fields in CMOS Monolithic Active Pixel Sensors with point-like collection diodes
Authors:
M. Deveaux,
J. Baudot,
A. Dorokhov,
D. Doering,
J. Heymes,
M. Kachel,
M. Koziel,
B. Linnik,
C. Müntz,
J. Stroth
Abstract:
- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors.
We stud…
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- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors.
We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion depth and the capacity of this point-like junction is introduced. We find that the predictions of this equations differs qualitatively from the usual results for flat PN junctions and that $dC/dU$-measurements are not suited to measure the depletion depth of diodes with point-like geometry. The predictions of the equation is compared with measurements on the depletion depth of CMOS sensors, which were carried out with a novel measurement protocol. It is found that the equation and the measurement results match with each other. By comparing our findings with TCAD simulations, we find that precise simulation models matches the empirical findings while simplified models overestimate the depletion depth dramatically. A potential explanation for this finding is introduced and the consequences for the design of CMOS sensors are discussed.
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Submitted 29 October, 2016; v1 submitted 26 July, 2016;
originally announced July 2016.
