Showing 1–17 of 17 results for author: Hewak, D

Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications

Authors: Nikolaos Aspiotis, Katrina Morgan, Benjamin März, Knut Müller-Caspary, Martin Ebert, Chung-Che Huang, Daniel W. Hewak, Sayani Majumdar, Ioannis Zeimpekis

Abstract: This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptak… ▽ More This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm^2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 10^7. Additionally, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at +-5 V with on/off ratio of 107 and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications. △ Less

Submitted 19 March, 2022; originally announced March 2022.

Comments: 16 pages, 9 figures

Low energy switching of phase change materials using a 2D thermal boundary layer

Authors: **g Ning, Yunzheng Wang, Ting Yu Teo, Chung-Che Huang, Ioannis Zeimpekis, Katrina Morgan, Siew Lang Teo, Daniel W. Hewak, Michel Bosman, Robert E. Simpson

Abstract: The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM e… ▽ More The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high power heat pulses are needed to melt-quench the material from crystalline to amorphous. This is especially true in silicon photonics, where the high thermal conductivity of the waveguide material makes heating the PCM energy inefficient. Here, we improve the energy efficiency of the laser-induced phase transitions by inserting a layer of two-dimensional (2D) material, either MoS2 or WS2, between the silica or silicon and the PCM. The 2D material reduces the required laser power by at least 40% during the amorphization (RESET) process, depending on the substrate. Thermal simulations confirm that both MoS2 and WS2 2D layers act as a thermal barrier, which efficiently confines energy within the PCM layer. Remarkably, the thermal insulation effect of the 2D layer is equivalent to a ~100 nm layer of SiO2. The high thermal boundary resistance induced by the van der Waals (vdW)-bonded layers limits the thermal diffusion through the layer interfaces. Hence, 2D materials with stable vdW interfaces can be used to improve the thermal efficiency of PCM-tuned Si photonic devices. Furthermore, our waveguide simulations show that the 2D layer does not affect the propagating mode in the Si waveguide, thus this simple additional thin film produces a substantial energy efficiency improvement without degrading the optical performance of the waveguide. Our findings pave the way for energy-efficient laser-induced structural phase transitions in PCM-based reconfigurable photonic devices. △ Less

Submitted 9 February, 2022; originally announced February 2022.

Comments: 34 pages, 12 figures

Time-resolved reversible optical switching of the ultralow-loss phase change material Sb2Se3

Authors: Daniel Lawson, Daniel W. Hewak, Otto L. Muskens, Ioannis Zeimpekis

Abstract: The antimony-based chalcogenide Sb2Se3 is a rapidly emerging material for photonic phase change applications owing to its ultra-low optical losses at telecommunication wavelengths in both crystalline and amorphous phases. Here, we investigate the dynamical response of these materials from nanoseconds to milliseconds under optical pum** conditions. We apply bichromatic pump-probe transient reflec… ▽ More The antimony-based chalcogenide Sb2Se3 is a rapidly emerging material for photonic phase change applications owing to its ultra-low optical losses at telecommunication wavelengths in both crystalline and amorphous phases. Here, we investigate the dynamical response of these materials from nanoseconds to milliseconds under optical pum** conditions. We apply bichromatic pump-probe transient reflectance spectroscopy which is a widely used method to study the optical performance of optical phase change materials. Amorphous regions of several hundreds of nanometers in diameter are induced by pulsed excitation of the material using a wavelength of 488 nm above the absorption edge, while the transient reflectance is probed using a continuous wave 980 nm laser, well below the absorption edge of the material. We find vitrification dynamics in the nanosecond range and observe crystallization on millisecond time scales. These results show a large five-orders of magnitude difference in time scales between crystallization and vitrification dynamics in this material. The insights provided in this work are fundamental for the optimisation of the material family and its employment in photonic applications. △ Less

Submitted 25 November, 2021; originally announced November 2021.

Comments: 9 pages, 5 figures

Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass

Authors: M. Hughes, W. Yang, D. Hewak

Abstract: The authors describe the fabrication of buried waveguides in a highly nonlinear chalcogenide glass, gallium lanthanum sulfide, using focused femtosecond laser pulses. Through optical characterization of the waveguides, they have proposed a formation mechanism and provide comparisons to previous work. Tunneling has been identified as the dominant nonlinear absorption mechanism in the formation of t… ▽ More The authors describe the fabrication of buried waveguides in a highly nonlinear chalcogenide glass, gallium lanthanum sulfide, using focused femtosecond laser pulses. Through optical characterization of the waveguides, they have proposed a formation mechanism and provide comparisons to previous work. Tunneling has been identified as the dominant nonlinear absorption mechanism in the formation of the waveguides. Single mode guidance at 633 nm has been demonstrated. The writing parameters for the minimum propagation loss of 1.47 dB/cm are 0.36 uJ pulse energy and 50 um/s scanning speed. △ Less

Submitted 20 October, 2021; originally announced October 2021.

Journal ref: APPLIED PHYSICS LETTERS 90, 131113 (2007)

Enhanced Meta-Displays Using Advanced Phase-Change Materials

Authors: Omid Hemmatyar, Sajjad Abdollahramezani, Ioannis Zeimpekis, Sergey Lepeshov, Alex Krasnok, Asir Intisar Khan, Kathryn M. Neilson, Christian Teichrib, Tyler Brown, Eric Pop, Daniel W. Hewak, Matthias Wuttig, Andrea Alu, Otto L. Muskens, Ali Adibi

Abstract: Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations of these structure-dependent colors lack post-fabrication tunability. This hinders their applicability for front-end dynamic display technologies. Phase-change… ▽ More Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations of these structure-dependent colors lack post-fabrication tunability. This hinders their applicability for front-end dynamic display technologies. Phase-change materials (PCMs), with significant contrast of their optical properties between their amorphous and crystalline states, have demonstrated promising potentials in reconfigurable nanophotonics. Herein, we leverage tunable all-dielectric reflective metasurfaces made of newly emerged classes of low-loss optical PCMs, i.e., antimony trisulphide (Sb$_2$S$_3$) and antimony triselenide (Sb$_2$Se$_3$), with superb characteristics to realize switchable, high-saturation, high-efficiency and high-resolution dynamic meta-pixels. Exploiting polarization-sensitive building blocks, the presented meta-pixel can generate two different colors when illuminated by either one of two orthogonally polarized incident beams. Such degrees of freedom (i.e., material phase and polarization state) enable a single reconfigurable metasurface with fixed geometrical parameters to generate four distinct wide-gamut colors. We experimentally demonstrate, for the first time, an electrically-driven micro-scale display through the integration of phase-change metasurfaces with an on-chip heater formed by transparent conductive oxide. Our experimental findings enable a versatile platform suitable for a wide range of applications, including tunable full-color printing, enhanced dynamic displays, information encryption, and anti-counterfeiting. △ Less

Submitted 19 July, 2021; originally announced July 2021.

Comments: arXiv admin note: substantial text overlap with arXiv:2105.01313

Towards low loss non-volatile phase change materials in mid index waveguides

Authors: Joaquin Faneca, Ioannis Zeimpekis, S. T. Ilie, Thalía Domínguez Bucio, Katarzyna Grabska, Daniel W. Hewak, Frederic Y. Gardes

Abstract: Photonic integrated circuits currently use platform intrinsic thermo-optic and electro-optic effects to implement dynamic functions such as switching, modulation and other processing. Currently, there is a drive to implement field programmable photonic circuits, a need which is only magnified by new neuromorphic and quantum computing applications. The most promising non-volatile photonic component… ▽ More Photonic integrated circuits currently use platform intrinsic thermo-optic and electro-optic effects to implement dynamic functions such as switching, modulation and other processing. Currently, there is a drive to implement field programmable photonic circuits, a need which is only magnified by new neuromorphic and quantum computing applications. The most promising non-volatile photonic components employ phase change materials such as GST and GSST, which had their origin in electronic memory. However, in the optical domain, these compounds introduce significant losses potentially preventing a large number of applications. Here, we evaluate the use of two newly introduced low loss phase change materials, Sb2S3 and Sb2Se3, on a silicon nitride photonic platform. We focus the study on Mach-Zehnder interferometers that operate at the O and C bands to demonstrate the performance of the system. Our measurements show an insertion loss below 0.04 dB/um for Sb2S3 and lower than 0.09 dB/um for Sb2Se3 cladded devices for both amorphous and crystalline phases. The effective refractive index contrast for Sb2S3 on SiNx was measured to be 0.05 at 1310 nm and 0.02 at 1550 nm, whereas for Sb2Se3, it was 0.03 at 1310 nm and 0.05 at 1550 nm highlighting the performance of the integrated device. △ Less

Submitted 26 January, 2021; originally announced January 2021.

Comments: 11 pages, 7 figures

Non-volatile programmable silicon photonics using an ultralow loss Sb$_2$Se$_3$ phase change material

Authors: Matthew Delaney, Ioannis Zeimpekis, Han Du, Xingzhao Yan, Mehdi Banakar, David J. Thomson, Daniel W. Hewak, Otto L. Muskens

Abstract: Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the… ▽ More Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb$_2$Se$_3$ for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb$_2$Se$_3$ facilitates an unprecedented optical phase control exceeding 10$π$ radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a conceptually new approach at a footprint orders of magnitude smaller than state of the art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip. △ Less

Submitted 10 January, 2021; originally announced January 2021.

Comments: 22 pages, 11 figures

Intense Anti-Stokes Emission of Erbium Ions in Gallium Lanthanum Sulphide-Oxide Glass in Visible Spectral Range

Authors: M. M. Voronov, A. B. Pevtsov, A. P. Skvortsov, C. Koughia, C. Craig, D. W. Hewak, S. Kasap, V. G. Golubev

Abstract: Photoluminescence spectra have been investigated in erbium doped GaLaS(O) glasses. The samples demonstrate intense green emission bands centered at around 525 and 550 nm due to up-conversion processes in erbium ions. The theoretical description of up-conversion intensity as a function of excitation intensity has been offered. It is based on a solution of a system of rate equations taking into acco… ▽ More Photoluminescence spectra have been investigated in erbium doped GaLaS(O) glasses. The samples demonstrate intense green emission bands centered at around 525 and 550 nm due to up-conversion processes in erbium ions. The theoretical description of up-conversion intensity as a function of excitation intensity has been offered. It is based on a solution of a system of rate equations taking into account three up-conversion transitions. △ Less

Submitted 15 January, 2020; originally announced January 2020.

Comments: 4 pages, 5 figures

Observation of Complete Photonic Bandgap in Low Refractive Index Contrast Inverse Rod-Connected Diamond Structured Chalcogenides

Authors: Lifeng Chen, Katrina A. Morgan, Ghada A. Alzaidy, Chung-Che Huang, Ying-Lung Daniel Ho, Mike P. C. Taverne, Xu Zheng, Zhong Ren, Zhuo Feng, Ioannis Zeimpekis, Daniel W. Hewak, John G. Rarity

Abstract: Three-dimensional complete photonic bandgap materials or photonic crystals block light propagation in all directions. The rod-connected diamond structure exhibits the largest photonic bandgap known to date and supports a complete bandgap for the lowest refractive index contrast ratio down to $n_{high}/n_{low} \sim 1.9$. We confirm this threshold by measuring a complete photonic bandgap in the infr… ▽ More Three-dimensional complete photonic bandgap materials or photonic crystals block light propagation in all directions. The rod-connected diamond structure exhibits the largest photonic bandgap known to date and supports a complete bandgap for the lowest refractive index contrast ratio down to $n_{high}/n_{low} \sim 1.9$. We confirm this threshold by measuring a complete photonic bandgap in the infrared region in Sn--S--O $(n\sim1.9)$ and Ge--Sb--S--O $(n\sim2)$ inverse rod-connected diamond structures. The structures were fabricated using a low-temperature chemical vapor deposition process via a single-inversion technique. This provides a reliable fabrication technique of complete photonic bandgap materials and expands the library of backfilling materials, leading to a wide range of future photonic applications. △ Less

Submitted 1 May, 2019; originally announced May 2019.

Transition Metal Chalcogenide Tin Sulfide Nanodimensional Films Align Liquid Crystals

Authors: Asi Solodar, Ghadah AlZaidy, Chung-Che Huang, Daniel W. Hewak, Ibrahim Abdulhalim

Abstract: Transition metal chalcogenide tin sulfide (SnS) films as alternative noncontact alignment layer for liquid crystals, have been demonstrated and investigated. The SnS has an anisotropic atomic chain structure similar to black Phosphorous which causes the liquid crystal molecules to align without the need for any additional surface treatments. The high anisotropic nature of SnS promotes the alignmen… ▽ More Transition metal chalcogenide tin sulfide (SnS) films as alternative noncontact alignment layer for liquid crystals, have been demonstrated and investigated. The SnS has an anisotropic atomic chain structure similar to black Phosphorous which causes the liquid crystal molecules to align without the need for any additional surface treatments. The high anisotropic nature of SnS promotes the alignment of the easy axis of liquid crystal molecules along the periodic atomic grooves of the SnS layer. The atomically thin SnS layers were deposited on indium tin oxide films on glass substrates, at room temperature by chemical vapor deposition. The device characteristics are comparable to those commercially available, which use photo-aligning polymer materials. We measured threshold voltage of 0.92V, anchoring energy of 1.573x10^(-6) J/m^2, contrast ratio better than 71:1 and electro-optical rise/fall times of 80/390ms, respectively for ~11 micron thick liquid crystal device as expected. △ Less

Submitted 12 January, 2018; originally announced February 2018.

Chalcogenide Glass-on-Graphene Photonics

Authors: Hongtao Lin, Yi Song, Yizhong Huang, Derek Kita, Kaiqi Wang, Lan Li, Junying Li, Hanyu Zheng, Skylar Deckoff-Jones, Zhengqian Luo, Haozhe Wang, Spencer Novak, Anupama Yadav, Chung-Che Huang, Tian Gu, Daniel Hewak, Kathleen Richardson, **g Kong, Juejun Hu

Abstract: Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D mate… ▽ More Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material which can be directly deposited and patterned on a wide variety of 2-D materials and can simultaneously function as the light guiding medium, a gate dielectric, and a passivation layer for 2-D materials. Besides claiming improved fabrication yield and throughput compared to the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2-D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared (mid-IR) waveguide-integrated photodetectors and modulators. △ Less

Submitted 5 March, 2017; originally announced March 2017.

Journal ref: Nature Photonics 11, 798-805 (2017)

The transition from quantum field theory to one-particle quantum mechanics and a proposed interpretation of Aharonov-Bohm effect

Authors: Benliang Li, Daniel W. Hewak, Qi Jie Wang

Abstract: In this article we demonstrate a sense in which the one-particle quantum mechanics (OPQM) and the classical electromagnetic four-potential arise from quantum field theory (QFT). In addition, the classical Maxwell equations are derived from a QFT scattering process, while both classical electromagnetic fields and potentials serve as mathematical tools to approximate the interactions among elementar… ▽ More In this article we demonstrate a sense in which the one-particle quantum mechanics (OPQM) and the classical electromagnetic four-potential arise from quantum field theory (QFT). In addition, the classical Maxwell equations are derived from a QFT scattering process, while both classical electromagnetic fields and potentials serve as mathematical tools to approximate the interactions among elementary particles described by QFT physics. Furthermore, a plausible interpretation of the Aharonov-Bohm (AB) effect is raised within the QFT framework. We provide a quantum treatment of the source of electromagnetic potentials and argue that the underlying mechanism in the AB effect can be understood via interactions among electrons described by QFT where the interactions are mediated by virtual photons. △ Less

Submitted 9 July, 2018; v1 submitted 12 July, 2016; originally announced July 2016.

Comments: 19 pages, 2 figures. Final published version

Journal ref: Foundations of Physics, 48(7), 837-852 (2018)

Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass

Authors: M. Hughes, R. J. Curry, H. Rutt, D. Hewak

Abstract: Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730 and 1155 nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width half maximum (FWHM) of 500 nm, is observed peaking at 1500 nm when exciting at 514, 808 and 1064 nm. The fluorescence lifetime and quantum efficiency at 300 K were measured to be 33.4 us a… ▽ More Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730 and 1155 nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width half maximum (FWHM) of 500 nm, is observed peaking at 1500 nm when exciting at 514, 808 and 1064 nm. The fluorescence lifetime and quantum efficiency at 300 K were measured to be 33.4 us and 4 % respectively. From the available spectroscopic data we propose the vanadium ions valence to be 3+ and be in tetrahedral coordination The results indicate potential for development of a laser or optical amplifier based on V:GLS. △ Less

Submitted 26 November, 2014; originally announced November 2014.

Journal ref: Applied Physis Letters 90, 031108 2007

Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass

Authors: M. Hughes, D. W. Hewak, R. J. Curry

Abstract: In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various do** concentrations between 0.01 and 1% (molar). We demonstrate that below a critical do** concentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/τ)\b{eta}], where τ is the fluorescence lifetime and \b{eta… ▽ More In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various do** concentrations between 0.01 and 1% (molar). We demonstrate that below a critical do** concentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/τ)\b{eta}], where τ is the fluorescence lifetime and \b{eta} is the stretch factor. At low concentrations the lifetime for vanadium and titanium doped GLS was 30 μs and 67 μs respectively. We validate the use of the stretched exponential model and discuss the possible microscopic phenomenon it arises from. We also demonstrate that above a critical do** concentration of around 0.1% (molar) the fluorescence decay profile can be fitted with the double exponential function: a*exp-(t/τ1)+ b*exp-(t/τ2), where τ1and τ2 are characteristic fast and slow components of the fluorescence decay profile, for vanadium the fast and slow components are 5 μs and 30 μs respectively and for titanium they are 15 μs and 67 μs respectively. We also show that the fluorescence lifetime of vanadium and titanium at low concentrations in the oxide rich host gallium lanthanum oxy-sulphide (GLSO) is 43 μs and 97 μs respectively, which is longer than that in GLS. From this we deduce that vanadium and titanium fluorescing ions preferentially substitute into high efficiency oxide sites until at a critical concentration they become saturated and low efficiency sulphide sites start to be filled. △ Less

Submitted 20 November, 2014; originally announced November 2014.

Journal ref: Photonics West, (2007), 64690D

n-Type Chalcogenides by Ion Implantation

Authors: Mark A. Hughes, Yanina Fedorenko, Behrad Gholipour, ** Yao, Tae-Hoon Lee, Russell M. Gwilliam, Kevin P. Homewood, Steven Hinder, Daniel W. Hewak, Stephen R. Elliott, Richard J. Curry

Abstract: Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoe… ▽ More Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb do** concentrations (5 to 11 at.%) incorporated during high-temperature glass melting. Here we report the first n-type do** of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical do** effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses. △ Less

Submitted 20 November, 2014; originally announced November 2014.

Journal ref: Nature Communications (2014) 5:5346

Electrical properties of Bi-implanted amorphous chalcogenide films

Authors: Yanina G. Fedorenko, Mark A. Hughes, Julien L. Colaux, C. Jeynes, Russell M. Gwilliam, Kevin Homewood, B. Gholipour, J. Yao, Daniel W. Hewak, Tae-Hoon Lee, Stephen R. Elliott, Richard J. Curry

Abstract: The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films… ▽ More The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth. △ Less

Submitted 9 December, 2014; v1 submitted 21 October, 2014; originally announced October 2014.

Comments: This is an extended version of the results presented in Proc. SPIE 8982, 898213 (2014)

Phase-change chalcogenide glass metamaterial

Authors: Z. L. Samson, K. F. MacDonald, F. De Angelis, K. Knight, C. C. Huang, E. Di Fabrizio, D. W. Hewak, N. I. Zheludev

Abstract: Combining metamaterials with functional media brings a new dimension to their performance. Here we demonstrate substantial resonance frequency tuning in a photonic metamaterial hybridized with an electrically/optically switchable chalcogenide glass. The transition between amorphous and crystalline forms brings about a 10% shift in the near-infrared resonance wavelength of an asymmetric split-rin… ▽ More Combining metamaterials with functional media brings a new dimension to their performance. Here we demonstrate substantial resonance frequency tuning in a photonic metamaterial hybridized with an electrically/optically switchable chalcogenide glass. The transition between amorphous and crystalline forms brings about a 10% shift in the near-infrared resonance wavelength of an asymmetric split-ring array, providing transmission modulation functionality with a contrast ratio of 4:1 in a device of sub-wavelength thickness. △ Less

Submitted 21 December, 2009; originally announced December 2009.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 96, 143105 (2010)