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Coulomb Blockade from the Shell of an InP-InAs Core-Shell Nanowire with a Triangular Cross Section
Authors:
D. J. O. Göransson,
M. Heurlin,
B. Dalelkhan,
S. Abay,
M. E. Messing,
V. F. Maisi,
M. T. Borgström,
H. Q. Xu
Abstract:
We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexa…
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We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shell are grown preferentially on specific {1$\bar{1}$00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred on to a Si/SiO$_2$ substrate and then contacted with several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single core-shell nanowire and consists of the entire InAs shell in the nanowire.
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Submitted 28 January, 2019;
originally announced January 2019.
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Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-incidence Response in the Long-wavelength Infrared
Authors:
Mohammad Karimi,
Magnus Heurlin,
Steven Limpert,
Vishal Jain,
Xulu Zeng,
Irene Geijselaers,
Ali Nowzari,
Ying Fu,
Lars Samuelson,
Heiner Linke,
Magnus T. Borgstrom,
Hakan Pettersson
Abstract:
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and near infrared. Here, we report on broadband nanowire heterostructure array photodetectors exhibiting a photoresponse from the visible to long-wavele…
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Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and near infrared. Here, we report on broadband nanowire heterostructure array photodetectors exhibiting a photoresponse from the visible to long-wavelength infrared. In particular, the infrared response from 3-20 um is enabled by normal incidence excitation of intersubband transitions in low-bandgap InAsP quantum discs synthesized axially within InP nanowires. The optical characteristics are explained by the excitation of the longitudinal component of optical modes in the photonic crystal formed by the nanostructured portion of the detectors, combined with a non-symmetric potential profile of the discs resulting from synthesis. Our results provide a generalizable insight into how broadband nanowire photodetectors may be designed, and how engineered nanowire heterostructures open up new fascinating opportunities for optoelectronics.
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Submitted 10 September, 2017;
originally announced September 2017.
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InP/InAsP Nanowire-based Spatially Separate Absorption and Multiplication Avalanche Photodetectors
Authors:
Vishal Jain,
Magnus Heurlin,
Enrique Barrigon,
Lorenzo Bosco,
Ali Nowzari,
Shishir Shroff,
Virginia Boix,
Mohammad Karimi,
Reza J. Jam,
Alexander Berg,
Lars Samuelson,
Magnus T. Borgström,
Federico Capasso,
Håkan Pettersson
Abstract:
Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large bandgap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller bandgap materials…
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Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large bandgap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller bandgap materials required for absorption at 1.3/1.55 um. Self-assembled III-V semiconductor nanowires offer key advantages such as enhanced absorption due to optical resonance effects, strain-relaxed heterostructures and compatibility with main-stream silicon technology. Here, we present electrical and optical characteristics of single InP and InP/InAsP nanowire APD structures. Temperature-dependent breakdown characteristics of p+-n-n+ InP nanowire devices were investigated first. A clear trap-induced shift in breakdown voltage was inferred from I-V measurements. An improved contact formation to the p+-InP segment was observed upon annealing, and its effect on breakdown characteristics was investigated. The bandgap in the absorption region was subsequently varied from pure InP to InAsP to realize spatially separate absorption and multiplication APDs in heterostructure nanowires. In contrast to the homojunction APDs, no trap-induced shifts were observed for the heterostructure APDs. A gain of 12 was demonstrated for selective optical excitation of the InAsP segment. Additional electron beam-induced current measurements were carried out to investigate the effect of local excitation along the nanowire on the I-V characteristics. Our results provide important insight for optimization of avalanche photodetector devices based on III-V nanowires.
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Submitted 3 June, 2017;
originally announced June 2017.
