Showing 1–50 of 76 results for author: Heun, S

Rapid synthesis of uniformly small nickel nanoparticles for the surface functionalization of epitaxial graphene

Authors: Ylea Vlamidis, Stiven Forti, Antonio Rossi, Carmela Marinelli, Camilla Coletti, Stefan Heun, Stefano Veronesi

Abstract: Nickel nanoparticles (Ni NPs), thanks to their peculiar properties, are interesting materials for many applications including catalysis, hydrogen storage, and sensors. In this work, Ni NPs are synthesized in aqueous solution by a simple and rapid procedure with cetyltrimethylammonium bromide (CTAB) as a cap** agent, and are extensively characterized by dynamic light scattering (DLS), scanning el… ▽ More Nickel nanoparticles (Ni NPs), thanks to their peculiar properties, are interesting materials for many applications including catalysis, hydrogen storage, and sensors. In this work, Ni NPs are synthesized in aqueous solution by a simple and rapid procedure with cetyltrimethylammonium bromide (CTAB) as a cap** agent, and are extensively characterized by dynamic light scattering (DLS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). We investigated their shape, dimension, and their distribution on the surfaces of SiO2 and epitaxial graphene (EG) samples. Ni NPs have an average diameter of ~11 nm, with a narrow size dispersion, and their arrangement on the surface is strongly dependent on the substrate. EG samples functionalized with Ni NPs are further characterized by X-ray photoelectron spectroscopy (XPS), as made and after thermal annealing above 350°C to confirm the degradation of CTAB and the presence of metallic Ni(0). Moreover, high resolution scanning tunneling microscopy (STM) topographies reveal the structural stability of the NPs up to 550 °C. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Anomalous supercurrent and diode effect in locally perturbed topological Josephson junctions

Authors: Samuele Fracassi, Simone Traverso, Niccolò Traverso Ziani, Matteo Carrega, Stefan Heun, Maura Sassetti

Abstract: The simultaneous breaking of time-reversal and inversion symmetry can lead to peculiar effects in Josephson junctions, such as the anomalous Josephson effect or supercurrent rectification, which is a dissipationless analog of the diode effect. Due to their impact in new quantum technologies, it is important to find robust platforms and external means to manipulate the above effects in a controlled… ▽ More The simultaneous breaking of time-reversal and inversion symmetry can lead to peculiar effects in Josephson junctions, such as the anomalous Josephson effect or supercurrent rectification, which is a dissipationless analog of the diode effect. Due to their impact in new quantum technologies, it is important to find robust platforms and external means to manipulate the above effects in a controlled way. Here, we theoretically consider a Josephson junction based on a quantum spin Hall system as the normal channel, subjected to a magnetic field in the direction defined by spin-momentum locking, and in presence of a local tip in close proximity to one of the metallic edges in the normal region. We consider different local perturbations, model normal and magnetic tips, and study how they affect the Josephson response of the device. In particular, we argue that magnetic tips are a useful tool that allows for tunability of both $φ_0$ response and supercurrent rectification. △ Less

Submitted 13 June, 2024; v1 submitted 26 March, 2024; originally announced March 2024.

Comments: Article: 7 pages, 4 figures. Supplementary Materials: 3 pages, 0 figures

Journal ref: Appl. Phys. Lett. 124, 242601 (2024)

Metal Nanoparticle-Functionalized Three-Dimensional Graphene: a versatile platform towards sensors and energy-related applications

Authors: Emanuele Pompei, Ylea Vlamidis, Letizia Ferbel, Valentina Zannier, Silvia Rubini, Daniel Arenas Esteban, Sara Bals, Carmela Marinelli, Georg Pfusterschmied, Markus Leitgeb, Ulrich Schmid, Stefan Heun, Stefano Veronesi

Abstract: We demonstrate the first successful functionalization of epitaxial three-dimensional graphene with metal nanoparticles. The functionalization is obtained by immersing the 3D graphene in a nanoparticle colloidal solution. This method is versatile and here is demonstrated for gold and palladium, but can be extended to other types and shapes of nanoparticles. We have measured the nanoparticle density… ▽ More We demonstrate the first successful functionalization of epitaxial three-dimensional graphene with metal nanoparticles. The functionalization is obtained by immersing the 3D graphene in a nanoparticle colloidal solution. This method is versatile and here is demonstrated for gold and palladium, but can be extended to other types and shapes of nanoparticles. We have measured the nanoparticle density on the top-surface and in the porous layer volume by Scanning Electron Microscopy and Scanning Transmission Electron Microscopy. Samples exhibit a high coverage of nanoparticles with minimal clustering. High quality graphene has been demonstrated to promote the functionalization leading to higher nanoparticle density, both on the surface and in the pores. X-ray Photoelectron Spectroscopy allowed to verify the absence of contamination after the functionalization process. Moreover, it confirmed the thermal stability of the Au- and Pd-functionalized three-dimensional graphene up to 530°C. Our approach opens up new avenues for utilizing three-dimensional graphene as a versatile platform for catalytic applications, sensors, and energy storage and conversion. △ Less

Submitted 25 October, 2023; originally announced October 2023.

Platinum-Decorated Graphene: Experimental Insight into Growth Mechanisms and Hydrogen Adsorption Properties

Authors: Letizia Ferbel, Stefano Veronesi, Ylea Vlamidis, Antonio Rossi, Leonardo Sabattini, Camilla Coletti, Stefan Heun

Abstract: The potential of graphene for hydrogen storage, coupled with the established role of Platinum as a catalyst for the hydrogen evolution reaction and the spillover effect, makes Pt-functionalized graphene a promising candidate for near-ambient hydrogen storage. This paper focuses on examining the process of Pt cluster formation on epitaxial graphene and assesses the suitability of the system as hydr… ▽ More The potential of graphene for hydrogen storage, coupled with the established role of Platinum as a catalyst for the hydrogen evolution reaction and the spillover effect, makes Pt-functionalized graphene a promising candidate for near-ambient hydrogen storage. This paper focuses on examining the process of Pt cluster formation on epitaxial graphene and assesses the suitability of the system as hydrogen storage material. Scanning tunneling microscopy unveils two primary pathways for Pt cluster growth. In the initial phase, up to ~1 ML of Pt coverage, Pt tends to randomly disperse and cover the graphene surface, while the cluster height remains essentially unchanged. Beyond a coverage of 3 ML, the nucleation of new layers on existing clusters becomes predominant. Then, the clusters mainly grow in height. Thermal desorption spectroscopy on hydrogenated Pt-decorated graphene reveals the presence of multiple hydrogen adsorption mechanisms, manifested as two Gaussian peaks superimposed on a linearly increasing background. We attribute the first peak at 150°C to hydrogen physisorbed on the surface of Pt clusters. The second peak at 430°C is attributed to chemisorption of hydrogen on the surface of the clusters, while the linearly increasing background is assigned to hydrogen bonded in the bulk of the Pt clusters. These measurements demonstrate the ability of Pt-functionalized graphene to store molecular hydrogen at temperatures that are high enough for stable hydrogen binding at room temperature. △ Less

Submitted 27 September, 2023; originally announced September 2023.

Three-dimensional graphene on a nano-porous 4H-SiC backbone: a novel material for food sensing applications

Authors: Stefano Veronesi, Ylea Vlamidis, Letizia Ferbel, Carmela Marinelli, Chiara Sanmartin, Isabella Taglieri, Georg Pfusterschmied, Markus Leitgeb, Ulrich Schmid, Fabio Mencarelli, Stefan Heun

Abstract: Sensors which are sensitive to volatile organic compounds and thus able to monitor the conservation state of food, are precious because they work non-destructively and allow to avoid direct contact with the food, ensuring hygienic conditions. In particular, the monitoring of rancidity would solve a widespread issue in food storage. The sensor discussed here is produced utilizing a novel three-dime… ▽ More Sensors which are sensitive to volatile organic compounds and thus able to monitor the conservation state of food, are precious because they work non-destructively and allow to avoid direct contact with the food, ensuring hygienic conditions. In particular, the monitoring of rancidity would solve a widespread issue in food storage. The sensor discussed here is produced utilizing a novel three-dimensional arrangement of graphene, which is grown on a crystalline silicon carbide (SiC) wafer previously porousified by chemical etching. This approach allows a very high surface-to.volume ratio. Furthermore, the structure of the sensor surface features a large amount of edges, dangling bounds, and active sites, which make the sensor, on a chemically robust skeleton, chemically active, particularly to hydrogenated molecules. The interaction of the sensor with such compounds is read out by measuring the sensor resistance in a four wire configuration. The sensor performance has been assessed on three hazelnut samples: sound hazelnuts, spoiled hazelnuts, and stink bug hazelnuts. A resistance variation of about DeltaR = 0.13 (0.02) Ohm between sound and damaged hazelnuts has been detected. Our measurements confirm the ability of the sensor to discriminate between sound and damaged hazelnuts. The sensor signal is stable for days, providing the possibility to use this sensor for the monitoring of the storage state of fats and foods in general. △ Less

Submitted 23 September, 2023; originally announced September 2023.

Comments: 11 pages, 6 figures 1 table

Half-integer Shapiro steps in highly transmissive InSb nanoflag Josephson junctions

Authors: Andrea Iorio, Alessandro Crippa, Bianca Turini, Sedighe Salimian, Matteo Carrega, Luca Chirolli, Valentina Zannier, Lucia Sorba, Elia Strambini, Francesco Giazotto, Stefan Heun

Abstract: We investigate a ballistic InSb nanoflag-based Josephson junction with Nb superconducting contacts. The high transparency of the superconductor-semiconductor interfaces enables the exploration of quantum transport with parallel short and long conducting channels. Under microwave irradiation, we observe half-integer Shapiro steps that are robust to temperature, suggesting their possible non-equilib… ▽ More We investigate a ballistic InSb nanoflag-based Josephson junction with Nb superconducting contacts. The high transparency of the superconductor-semiconductor interfaces enables the exploration of quantum transport with parallel short and long conducting channels. Under microwave irradiation, we observe half-integer Shapiro steps that are robust to temperature, suggesting their possible non-equilibrium origin. Our results demonstrate the potential of ballistic InSb nanoflags Josephson junctions as a valuable platform for understanding the physics of hybrid devices and investigating their non-equilibrium dynamics. △ Less

Submitted 10 March, 2023; originally announced March 2023.

Comments: 37 pages, 14 figures

Journal ref: Phys. Rev. Research 5, 033015 (2023)

Study of hydrogen absorption in a novel three-dimensional graphene structure: Towards hydrogen storage applications

Authors: Aureliano Macili, Ylea Vlamidis, Georg Pfusterschmied, Markus Leitgeb, Ulrich Schmid, Stefan Heun, Stefano Veronesi

Abstract: The use of a novel three-dimensional graphene structure allows circumventing the limitations of the two-dimensional nature of graphene and its application in hydrogen absorption. Here we investigate hydrogen-bonding on monolayer graphene conformally grown via the epitaxial growth method on the (0001) face of a porousified 4H-SiC wafer. Hydrogen absorption is studied via Thermal Desorption Spectros… ▽ More The use of a novel three-dimensional graphene structure allows circumventing the limitations of the two-dimensional nature of graphene and its application in hydrogen absorption. Here we investigate hydrogen-bonding on monolayer graphene conformally grown via the epitaxial growth method on the (0001) face of a porousified 4H-SiC wafer. Hydrogen absorption is studied via Thermal Desorption Spectroscopy (TDS), exposing the samples to either atomic (D) or molecular (D2) deuterium. The graphene growth temperature, hydrogen exposure temperature, and the morphology of the structure are investigated and related to their effect on hydrogen absorption. The three-dimensional graphene structures chemically bind atomic deuterium when exposed to D2. This is the first report of such an event in unfunctionalized graphene-based materials and implies the presence of a catalytic splitting mechanism. It is further shown that the three-dimensional dendritic structure of the porous material temporarily retains the desorbed molecules and causes delayed emission. The capability of chemisorbing atoms after a catalytic splitting of hydrogen, coupled to its large surface-to-volume ratio, make these structures a promising substrate for hydrogen storage devices. △ Less

Submitted 17 February, 2023; originally announced February 2023.

Journal ref: Applied Surface Science 615 (2023) 156375

Propagation of Visible Light in Nanostructured Niobium Stripes Embedded in a Dielectric Polymer

Authors: F. Telesio, F. Mezzadri, M. Serrano-Ruiz, M. Peruzzini, F. Bisio, S. Heun, F. Fabbri

Abstract: Nanometric metallic stripes allow the transmission of optical signals via the excitation and propagation of surface-localized evanescent electromagnetic waves, with important applications in the field of nano-photonics. Whereas this kind of plasmonic phenomena typically exploits noble metals, like Ag or Au, other materials can exhibit viable light-transport efficiency. In this work, we demonstrate… ▽ More Nanometric metallic stripes allow the transmission of optical signals via the excitation and propagation of surface-localized evanescent electromagnetic waves, with important applications in the field of nano-photonics. Whereas this kind of plasmonic phenomena typically exploits noble metals, like Ag or Au, other materials can exhibit viable light-transport efficiency. In this work, we demonstrate the transport of visible light in nanometric niobium stripes coupled with a dielectric polymeric layer, exploiting the remotely-excited/detected Raman signal of black phosphorus (bP) as the probe. The light-transport mechanism is ascribed to the generation of surface plasmon polaritons at the Nb/polymer interface. The propagation length is limited due to the lossy nature of niobium in the optical range, but this material may allow the exploitation of specific functionalities that are absent in noble-metal counterparts. △ Less

Submitted 23 December, 2022; originally announced December 2022.

Comments: 18 pages, 6 figures; supporting information 7 pages, 9 figures

Journal ref: Mater. Quantum. Technol. 2 045003 (2022)

Josephson Diode Effect in High Mobility InSb Nanoflags

Authors: Bianca Turini, Sedighe Salimian, Matteo Carrega, Andrea Iorio, Elia Strambini, Francesco Giazotto, Valentina Zannier, Lucia Sorba, Stefan Heun

Abstract: We report evidence of non-reciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions, owing to a strong spin-orbit coupling. Applying an in-plane magnetic field, we observe an inequality in supercurrent for the two opposite current propagation directions. This demonstrates that these devices can work as Josephson diodes, with dissipation-less current flowing in onl… ▽ More We report evidence of non-reciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions, owing to a strong spin-orbit coupling. Applying an in-plane magnetic field, we observe an inequality in supercurrent for the two opposite current propagation directions. This demonstrates that these devices can work as Josephson diodes, with dissipation-less current flowing in only one direction. For small fields, the supercurrent asymmetry increases linearly with the external field, then it saturates as the Zeeman energy becomes relevant, before it finally decreases to zero at higher fields. We show that the effect is maximum when the in-plane field is perpendicular to the current vector, which identifies Rashba spin-orbit coupling as the main symmetry-breaking mechanism. While a variation in carrier concentration in these high-quality InSb nanoflags does not significantly influence the diode effect, it is instead strongly suppressed by an increase in temperature. Our experimental findings are consistent with a model for ballistic short junctions and show that the diode effect is intrinsic to this material. Our results establish InSb Josephson diodes as a useful element in superconducting electronics. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Journal ref: Nano Lett. 2022, 22, 8502-8508

Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$

Authors: A. Benali, P. Rajak, R. Ciancio, J. R. Plaisier, S. Heun, G. Biasiol

Abstract: We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer l… ▽ More We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers embedding an InAs quantum well with thickness up to 7nm can be grown. This allows reaching low-temperature electron mobilities much higher than previously reported for samples obtained by metamorphic growth on GaAs, and comparable to the values achieved for samples grown on InP substrates. △ Less

Submitted 23 June, 2022; originally announced June 2022.

Journal ref: J. Cryst. Growth 593 (2022) 126768

Hydrogen spillover and storage on graphene with single-site Ti catalysts

Authors: Jhih-Wei Chen, Shang-Hsien Hsieh, Sheng-Shong Wong, Ya-Chi Chiu, Hung-Wei Shiu, Chia-Hsin Wang, Yaw-Wen Yang, Yao-Jane Hsu, Domenica Convertino, Camilla Coletti, Stefan Heun, Chia-Hao Chen, Chung-Lin Wu

Abstract: Hydrogen spillover and storage for single-site metal catalysts, including single-atom catalysts (SACs) and single nanocluster catalysts, have been elucidated for various supports but remain poorly understood for inert carbon supports. Here, we use synchrotron radiation-based methods to investigate the role of single-site Ti catalysts on graphene for hydrogen spillover and storage. Our in-situ angl… ▽ More Hydrogen spillover and storage for single-site metal catalysts, including single-atom catalysts (SACs) and single nanocluster catalysts, have been elucidated for various supports but remain poorly understood for inert carbon supports. Here, we use synchrotron radiation-based methods to investigate the role of single-site Ti catalysts on graphene for hydrogen spillover and storage. Our in-situ angle-resolved photoemission spectra results demonstrate a bandgap opening and the X-ray absorption spectra reveal the formation of C-H bonds, both indicating the partial graphene hydrogenation. With increasing Ti deposition and H2 exposure, the Ti atoms tend to aggregate to form nanocluster catalysts and yield 13.5% sp3-hybridized carbon atoms corresponding to a hydrogen-storage capacity of 1.11 wt% (excluding the weight of the Ti nanoclusters [1]). Our results demonstrate how a simple spillover process at Ti SACs can lead to covalent hydrogen bonding on graphene, thereby providing a strategy for a rational design of carbon-supported single-site catalysts. △ Less

Submitted 14 June, 2022; originally announced June 2022.

Journal ref: ACS Energy Lett. 2022, 7, 2297-2303

Theory of scanning gate microscopy imaging of the supercurrent distribution in a planar Josephson junction

Authors: K. Kaperek, S. Heun, M. Carrega, P. Wójcik, M. P. Nowak

Abstract: We theoretically investigate the map** of the supercurrent distribution in a planar superconductor-normal-superconductor junction in the presence of a perpendicular magnetic field via the scanning gate microscopy technique. We find that the distribution of counter-propagating supercurrents aligned in Josephson vortices can be mapped by the change of the critical current induced by the tip of the… ▽ More We theoretically investigate the map** of the supercurrent distribution in a planar superconductor-normal-superconductor junction in the presence of a perpendicular magnetic field via the scanning gate microscopy technique. We find that the distribution of counter-propagating supercurrents aligned in Josephson vortices can be mapped by the change of the critical current induced by the tip of the scanning probe, if the flux in the junction is set close to maxima of the Fraunhofer pattern. Instead, when the magnetic field drives the junction to a supercurrent minimum in the Fraunhofer pattern, the superconducting phase adapts, and the tip always increases the supercurrent. The perpendicular magnetic field leads to the formation of Josephson vortices, whose extension for highly transparent junctions depends on the current circulation direction. We show that this leads to an asymmetric supercurrent distribution in the junction and that this can be revealed by scanning gate microscopy. We explain our findings on the basis of numerical calculations for both short- and long-junction limits and provide a phenomenological model for the observed phenomena. △ Less

Submitted 22 August, 2022; v1 submitted 16 March, 2022; originally announced March 2022.

Journal ref: Phys. Rev. B 106, 035432 (2022)

Deterministic Covalent Organic Functionalization of Monolayer Graphene with 1,3-Dipolar Cycloaddition Via High Resolution Surface Engineering

Authors: Luca Basta, Federica Bianco, Aldo Moscardini, Filippo Fabbri, Luca Bellucci, Valentina Tozzini, Stefan Heun, Stefano Veronesi

Abstract: Spatially-resolved organic functionalization of monolayer graphene is successfully achieved by combining low-energy electron beam irradiation with 1,3-dipolar cycloaddition of azomethine ylide. Indeed, the modification of the graphene honeycomb lattice obtained via electron beam irradiation yields to a local increase of the graphene chemical reactivity. As a consequence, thanks to the high-spatial… ▽ More Spatially-resolved organic functionalization of monolayer graphene is successfully achieved by combining low-energy electron beam irradiation with 1,3-dipolar cycloaddition of azomethine ylide. Indeed, the modification of the graphene honeycomb lattice obtained via electron beam irradiation yields to a local increase of the graphene chemical reactivity. As a consequence, thanks to the high-spatially resolved generation of structural defects (~ 100 nm), chemical reactivity patterning has been designed over the graphene surface in a well-controlled way. Atomic force microscopy and Raman spectroscopy allow to investigate the two-dimensional spatial distribution of the structural defects and the new features that arise from the 1,3-dipolar cycloaddition, confirming the spatial selectivity of the graphene functionalization achieved via defect engineering. The Raman signature of the functionalized graphene is investigated both experimentally and via ab initio molecular dynamics simulations, computing the power spectrum. Furthermore, the organic functionalization is shown to be reversible thanks to the desorption of the azomethine ylide induced by focused laser irradiation. The selective and reversible functionalization of high quality graphene using 1,3-dipolar cycloaddition is a significant step towards the controlled synthesis of graphene-based complex structures and devices at the nanoscale. △ Less

Submitted 14 February, 2022; originally announced February 2022.

Comments: 11 pages, 7 figures

Journal ref: J. Mater. Chem. C 11 (2023) 2630 - 2639

Morphology and Electronic Properties of Incipient Soot by Scanning Tunneling Microscopy and Spectroscopy

Authors: Stefano Veronesi, Mario Commodo, Luca Basta, Gianluigi De Falco, Patrizia Minutolo, Nikolaos Kateris, Hai Wang, Andrea D'Anna, Stefan Heun

Abstract: Soot nucleation is one of the most complex and debated steps of the soot formation process in combustion. In this work, we used scanning tunneling microscopy (STM) and spectroscopy (STS) to probe morphological and electronic properties of incipient soot particles formed right behind the flame front of a lightly sooting laminar premixed flame of ethylene and air. Particles were thermophoretically s… ▽ More Soot nucleation is one of the most complex and debated steps of the soot formation process in combustion. In this work, we used scanning tunneling microscopy (STM) and spectroscopy (STS) to probe morphological and electronic properties of incipient soot particles formed right behind the flame front of a lightly sooting laminar premixed flame of ethylene and air. Particles were thermophoretically sampled on an atomically flat gold film on a mica substrate. High-resolution STM images of incipient soot particles were obtained for the first time showing the morphology of sub-5 nm incipient soot particles. High-resolution single-particle spectroscopic properties were measured confirming the semiconductor behavior of incipient soot particles with an electronic band gap ranging from 1.5 to 2 eV, consistent with earlier optical and spectroscopic observations. △ Less

Submitted 5 January, 2022; originally announced January 2022.

Journal ref: Combustion and Flame 243 (2022) 111980

Rb-induced (3x1) and (6x1) reconstructions on Si(111)-(7x7): A LEED and STM study

Authors: Letizia Ferbel, Stefano Veronesi, Stefan Heun

Abstract: We present a study of the rubidium adsorption on the Si(111)-(7x7) surface and the related Rb-induced reconstructions as a function of deposition temperature and Rb-coverage via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Sample analysis via LEED allowed to observe for the first time a Rb/Si(111)-(6x1) reconstruction. The STM image analysis allowed to obtain the… ▽ More We present a study of the rubidium adsorption on the Si(111)-(7x7) surface and the related Rb-induced reconstructions as a function of deposition temperature and Rb-coverage via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Sample analysis via LEED allowed to observe for the first time a Rb/Si(111)-(6x1) reconstruction. The STM image analysis allowed to obtain the first real space characterization of the Rb/Si(111)-(3x1) surface. In addition, STM provided a direct and local information on the surface arrangement as well as further insights on the interaction between Si and Rb atoms and on the growth dynamics. △ Less

Submitted 3 January, 2022; originally announced January 2022.

Comments: 23 pages, 8 figures, for associated Supporting Information see this URL https://ars.els-cdn.com/content/image/1-s2.0-S0039602821002144-mmc1.pdf

Journal ref: Surface Science, 718, 2022, 122011

Black Phosphorus n-type do** by Cu: a microscopic surface investigation

Authors: Abhishek Kumar, Francesca Telesio, Deborah Prezzi, Claudia Cardoso, Alessandra Catellani, Stiven Forti, Camilla Coletti, Manuel Serrano-Ruiz, Maurizio Peruzzini, Fabio Beltram, Stefan Heun

Abstract: We study surface charge transfer do** of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential… ▽ More We study surface charge transfer do** of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential of the local investigation, showing that the n-type do** effect of copper on bP is short-ranged. These experimental results are substantiated by first-principles simulations, which quantify the role of cluster size for an effective n-type do** of bP and explain the Coulomb blockade by an electronic decoupling of the topmost bP layer from the underlying layers driven by the copper cluster. Our results provide novel understanding, difficult to retrieve by transport measurements, of the do** of bP by copper, which appears promising for the implementation of ultra-sharp p-n junctions in bP. △ Less

Submitted 3 January, 2022; originally announced January 2022.

Journal ref: J. Phys. Chem. C 2021, 125, 13477-13484

Covalent Organic Functionalization of Graphene Nanosheets and Reduced Graphene Oxide via 1,3-Dipolar Cycloaddition of Azomethine Ylide

Authors: Luca Basta, Aldo Moscardini, Filippo Fabbri, Luca Bellucci, Valentina Tozzini, Silvia Rubini, Andrea Griesi, Mauro Gemmi, Stefan Heun, Stefano Veronesi

Abstract: Organic functionalization of graphene is successfully performed via 1,3-dipolar cycloaddition of azomethine ylide in the liquid phase. The comparison between 1-methyl-2-pyrrolidinone and N,N-dimethylformamide as dispersant solvents, and between sonication and homogenization as dispersion techniques, proves N,N-dimethylformamide and homogenization as the most effective choice. The functionalization… ▽ More Organic functionalization of graphene is successfully performed via 1,3-dipolar cycloaddition of azomethine ylide in the liquid phase. The comparison between 1-methyl-2-pyrrolidinone and N,N-dimethylformamide as dispersant solvents, and between sonication and homogenization as dispersion techniques, proves N,N-dimethylformamide and homogenization as the most effective choice. The functionalization of graphene nanosheets and reduced graphene oxide is confirmed using different techniques. Among them, energy-dispersive X-ray spectroscopy allows to map the pyrrolidine ring of the azomethine ylide on the surface of functionalized graphene, while micro-Raman spectroscopy detects new features arising from the functionalization, which are described in agreement with the power spectrum obtained from ab initio molecular dynamics simulation. Moreover, X-ray photoemission spectroscopy of functionalized graphene allows the quantitative elemental analysis and the estimation of the surface coverage, showing a higher degree of functionalization for reduced graphene oxide. This more reactive behavior originates from the localization of partial charges on its surface due to the presence of oxygen defects, as shown by the simulation of the electrostatic features. Functionalization of graphene using 1,3-dipolar cycloaddition is shown to be a significant step towards the controlled synthesis of graphene-based complex structures and devices at the nanoscale. △ Less

Submitted 23 December, 2021; originally announced December 2021.

Comments: 15 pages, 8 figures, for associated Supporting Information see http://shorturl.at/dCQ07

Journal ref: Nanoscale Advances, 3, 2021, 5841-5852

3D arrangement of epitaxial graphene conformally grown on porousified crystalline SiC

Authors: Stefano Veronesi, Georg Pfusterschmied, Filippo Fabbri, Markus Leitgeb, Omer Arif, Daniel Esteban Arenas, Sara Bals, Ulrich Schmid, Stefan Heun

Abstract: Nanoporous materials represent a versatile solution for a number of applications ranging from sensing, energy applications, catalysis, drug delivery, and many others. The synergy between the outstanding properties of graphene with a three-dimensional porous structure, circumventing the limits of its 2D nature, constitutes therefore a breakthrough for many fields. We report the first three-dimensio… ▽ More Nanoporous materials represent a versatile solution for a number of applications ranging from sensing, energy applications, catalysis, drug delivery, and many others. The synergy between the outstanding properties of graphene with a three-dimensional porous structure, circumventing the limits of its 2D nature, constitutes therefore a breakthrough for many fields. We report the first three-dimensional growth of epitaxial graphene on a porousified crystalline 4H-SiC(0001). The wafer porosification is performed via a sequence of metal-assisted photochemical and photoelectrochemical etching in hydrofluoric acid based electrolytes. Pore dimensions of the matrix have been evaluated by electron tomography resulting in an average diameter of 180 nm. Graphene growth is performed in an ultra high vacuum environment at a base pressure of $10^{-11}$ mbar. The graphene growth inside the pores is uniform as confirmed by Transmission Electron Microscopy (TEM) analysis. Raman spectroscopy confirms the high quality of the graphene with a 2D/G ratio $>1$ and an average graphene crystal size of $\approx$ 100 nm. Furthermore, it demonstrates a uniform coverage of graphene across the whole sample area. The surface-to-volume ratio of this novel material, its properties, the tunability of the pore size and the scalability of the surface porosification process offer a game changing perspective for a large number of applications. △ Less

Submitted 21 December, 2021; originally announced December 2021.

Journal ref: Carbon 189 (2022) 210-218

High Mobility Free-Standing InSb Nanoflags Grown On InP Nanowire Stems For Quantum Devices

Authors: Isha Verma, Sedighe Salimian, Valentina Zannier, Stefan Heun, Francesca Rossi, Daniele Ercolani, Fabio Beltram, Lucia Sorba

Abstract: High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs to efficiently relax elastic strain along the sidewalls when lattice-mismatched semiconductor… ▽ More High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs to efficiently relax elastic strain along the sidewalls when lattice-mismatched semiconductor systems are integrated. In this work, we optimize the morphology of free-standing 2D InSb nanoflags (NFs). In particular, robust NW stems, optimized growth parameters, and the use of reflection high-energy electron diffraction (RHEED), to precisely orient the substrate for preferential growth, are implemented to increase the lateral size of the 2D InSb NFs. Transmission electron microscopy (TEM) analysis of these NFs reveals defect-free zinc blend crystal structure, stoichiometric composition, and relaxed lattice parameters. The resulting NFs are large enough to fabricate Hall-bar contacts with suitable length-to-width ratio enabling precise electrical characterization. An electron mobility of ~29,500 cm2/Vs is measured, which is the highest value reported for free-standing 2D InSb nanostrutures in literature. We envision the use of 2D InSb NFs for fabrication of advanced quantum devices. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Comments: http://hdl.handle.net/11384/105250

Journal ref: ACS Appl. Nano Mater. 2021, 4, 5825-5833

Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions

Authors: Sedighe Salimian, Matteo Carrega, Isha Verma, Valentina Zannier, Michal P. Nowak, Fabio Beltram, Lucia Sorba, Stefan Heun

Abstract: High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrow band gap, high carrier mobility, and a small effective mass, and thus is very appealing in this context.… ▽ More High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrow band gap, high carrier mobility, and a small effective mass, and thus is very appealing in this context. In fact, this material has attracted tremendous attention in recent years for the implementation of topological superconducting states supporting Majorana zero modes. However, high-quality heteroepitaxial two-dimensional (2D) InSb layers are very diffcult to realize owing to the large lattice mismatch with all commonly available semiconductor substrates. An alternative pathway is the growth of free-standing single-crystalline 2D InSb nanostructures, the so-called nanoflags. Here we demonstrate fabrication of ballistic Josephson-junction devices based on InSb nanoflags with Ti/Nb contacts that show gate-tunable proximity-induced supercurrent up to 50 nA at 250 mK and a sizable excess current. The devices show clear signatures of subharmonic gap structures, indicating phase-coherent transport in the junction and a high transparency of the interfaces. This places InSb nanoflags in the spotlight as a versatile and convenient 2D platform for advanced quantum technologies. △ Less

Submitted 2 November, 2021; originally announced November 2021.

Journal ref: Appl. Phys. Lett. 119, 214004 (2021)

Evidence of Josephson coupling in a few-layer black phosphorus planar Josephson junction

Authors: Francesca Telesio, Matteo Carrega, Giulio Cappelli, Andrea Iorio, Alessandro Crippa, Elia Strambini, Francesco Giazotto, Manuel Serrano-Ruiz, Maurizio Peruzzini, Stefan Heun

Abstract: Setting up strong Josephson coupling in van der Waals materials in close proximity to superconductors offers several opportunities both to inspect fundamental physics and to develop novel cryogenic quantum technologies. Here we show evidence of Josephson coupling in a planar few-layer black Phosphorus junction. The planar geometry allows us to probe the junction behavior by means of external gates… ▽ More Setting up strong Josephson coupling in van der Waals materials in close proximity to superconductors offers several opportunities both to inspect fundamental physics and to develop novel cryogenic quantum technologies. Here we show evidence of Josephson coupling in a planar few-layer black Phosphorus junction. The planar geometry allows us to probe the junction behavior by means of external gates, at different carrier concentrations. Clear signatures of Josephson coupling are demonstrated by measuring supercurrent flow through the junction at milli Kelvin temperatures. Manifestation of Fraunhofer pattern with a transverse magnetic field is also reported, confirming the Josephson coupling. These findings represent the first evidence of proximity Josephson coupling in a planar junction based on a van der Waals material beyond graphene and open the way to new studies, exploiting the peculiar properties of exfoliated black phosphorus thin flakes. △ Less

Submitted 6 October, 2021; originally announced October 2021.

Journal ref: ACS Nano 2022, 16, 3538-3545

Anyons in Quantum Hall Interferometry

Authors: Matteo Carrega, Luca Chirolli, Stefan Heun, Lucia Sorba

Abstract: The quantum Hall (QH) effect represents a unique playground where quantum coherence of electrons can be exploited for various applications, from metrology to quantum computation. In the fractional regime it also hosts anyons, emergent quasiparticles that are neither bosons nor fermions and possess fractional statistics. Their detection and manipulation represent key milestones in view of topologic… ▽ More The quantum Hall (QH) effect represents a unique playground where quantum coherence of electrons can be exploited for various applications, from metrology to quantum computation. In the fractional regime it also hosts anyons, emergent quasiparticles that are neither bosons nor fermions and possess fractional statistics. Their detection and manipulation represent key milestones in view of topologically protected quantum computation schemes. Exploiting the high degree of phase coherence, edge states in the QH regime have been investigated by designing and constructing electronic interferometers, able to reveal the coherence and statistical properties of the interfering constituents. Here, we review the two main geometries developed in the QH regime, the Mach-Zehnder and the Fabry-Perot interferometers. We present their basic working principles, fabrication methods, and the main results obtained both in the integer and fractional QH regime. We will also show how recent technological advances led to the direct experimental demonstration of fractional statistics for Laughlin quasiparticles in a Fabry-Perot interferometric setup. △ Less

Submitted 29 September, 2021; v1 submitted 27 September, 2021; originally announced September 2021.

Comments: 43 pages one column, 9 figures

Journal ref: Nature Reviews Physics 3, 698 (2021)

Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)

Authors: Sedighe Salimian, Shaohua Xiang, Stefano Colonna, Fabio Ronci, Marco Fosca, Francesco Rossella, Fabio Beltram, Roberto Flammini, Stefan Heun

Abstract: We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 film was grown on Si(111) under ultra-high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene fl… ▽ More We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 film was grown on Si(111) under ultra-high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene flake was deposited on top of it by a polymer-based transfer technique, and a Hall bar device was fabricated from the graphene flake. STM was employed again to study the graphene flake under UHV conditions after device fabrication and showed that surface quality is preserved. Electrical transport measurements, carried out at low temperature in magnetic field, revealed back gate modulation of carrier type and density in the graphene channel and showed the occurrence of weak localization. Under these experimental conditions, no leakage current between back gate and graphene channel was detected. △ Less

Submitted 20 April, 2020; originally announced April 2020.

Journal ref: Adv. Mater. Interfaces 2020, 1902175

Programmable quantum Hall bisector: towards a novel resistance standard for quantum metrology

Authors: Zahra Sadre Momtaz, Stefan Heun, Giorgio Biasiol, Stefano Roddaro

Abstract: We demonstrate a programmable quantum Hall circuit that implements a novel iterative voltage bisection scheme and allows obtaining any binary fraction $(k/2^n)$ of the fundamental resistance quantum $R_K/2=h/2e^2$. The circuit requires a number $n$ of bisection stages that only scales logarithmically with the precision of the fraction. The value of $k$ can be set to any integer between 1 and… ▽ More We demonstrate a programmable quantum Hall circuit that implements a novel iterative voltage bisection scheme and allows obtaining any binary fraction $(k/2^n)$ of the fundamental resistance quantum $R_K/2=h/2e^2$. The circuit requires a number $n$ of bisection stages that only scales logarithmically with the precision of the fraction. The value of $k$ can be set to any integer between 1 and $2^n$ by proper gate configuration. The architecture exploits gate-controlled routing, mixing and equilibration of edge modes of robust quantum Hall states. The device does not contain {\em any} internal ohmic contact potentially leading to spurious voltage drops. Our scheme addresses key critical aspects of quantum Hall arrays of resistance standards, which are today widely studied and used to create custom calibration resistances. The approach is demonstrated in a proof-of-principle two-stage bisection circuit built on a high-mobility GaAs/AlGaAs heterostructure operating at a temperature of $260\,{\rm mK}$ and a magnetic field of $4.1\,{\rm T}$. △ Less

Submitted 22 March, 2020; originally announced March 2020.

Comments: 7 pages, 5 figures, plus SI

Journal ref: Phys. Rev. Applied 14, 024059 (2020)

Morphology of Ti on Monolayer Nanocrystalline Graphene and its Unexpectedly Low Hydrogen Adsorption

Authors: Yuya Murata, Stefano Veronesi, Dongmok Whang, Stefan Heun

Abstract: Hydrogen adsorption on graphene can be increased by functionalization with Ti. This requires dispersing Ti islands on graphene as small and dense as possible, in order to increase the number of hydrogen adsorption sites per Ti atom. In this report, we investigate the morphology of Ti on nanocrystalline graphene and its hydrogen adsorption by scanning tunneling microscopy and thermal desorption spe… ▽ More Hydrogen adsorption on graphene can be increased by functionalization with Ti. This requires dispersing Ti islands on graphene as small and dense as possible, in order to increase the number of hydrogen adsorption sites per Ti atom. In this report, we investigate the morphology of Ti on nanocrystalline graphene and its hydrogen adsorption by scanning tunneling microscopy and thermal desorption spectroscopy, and compare the results with equivalent measurements on single-crystalline graphene. Nanocrystalline graphene consists of extremely small crystal grains of < 5 nm size. Ti atoms preferentially adsorb at the grain boundaries of nanocrystalline graphene and form smaller and denser islands compared to single-crystalline graphene. Surprisingly, however, hydrogen adsorbs less to Ti on nanocrystalline graphene than to Ti on single-crystalline graphene. In particular, hydrogen hardly chemisorbs to 1 ML of Ti on nanocrystalline graphene. This may be attributed to strong bonds between Ti and defects located along the grain boundaries in nanocrystalline graphene. This mechanism might apply to other metals, as well, and therefore our results suggest that when functionalizing graphene by metal atoms for the purpose of hydrogen storage or other chemical reactions, it is important to consider not only the morphology of the resulting surface, but also the influence of graphene on the electronic states of the metal. △ Less

Submitted 14 February, 2020; originally announced February 2020.

Journal ref: J. Phys. Chem. C 2019, 123, 1572-1578

An atomically flat single-crystalline gold film thermometer on mica to study energy (heat) exchange at the nano-scale

Authors: S. Veronesi, T. Papa, Y. Murata, S. Heun

Abstract: There is a great interest in the scientific community to perform calorimetry on samples having mass in the nanogram range. A detailed knowledge of the energy (heat) exchange in the fast growing family of micro- and nano-systems could provide valuable information about the chemistry and physics at the nano-scale. The possibility to have an atomically flat thermal probe represents an added value, be… ▽ More There is a great interest in the scientific community to perform calorimetry on samples having mass in the nanogram range. A detailed knowledge of the energy (heat) exchange in the fast growing family of micro- and nano-systems could provide valuable information about the chemistry and physics at the nano-scale. The possibility to have an atomically flat thermal probe represents an added value, because it provides the unique opportunity to perform Scanning Probe Microscopy (SPM) together with calorimetry. Here we report the fabrication, characterization, and calibration of atomically flat, single-crystalline gold film thermometers on mica substrate. Gold re-crystallization has been obtained, and successively the thermometer surface has been studied by Low Energy Electron Diffraction (LEED) and Scanning Tunneling Microscopy (STM). The thermometer calibration demonstrates a heat exchange coefficient of 2.1 x 10^(-7) W/K and a performance about 10 times better than previous sensors based on Si substrates. The experimental setup allows the simultaneous investigation of heat exchange and surface physics on the same sample. △ Less

Submitted 1 November, 2019; originally announced November 2019.

Journal ref: Appl. Surf. Sci. 512 (2020) 145658

Investigation of InAs based devices for topological applications

Authors: Matteo Carrega, Stefano Guiducci, Andrea Iorio, Lennart Bours, Elia Strambini, Giorgio Biasiol, Mirko Rocci, Valentina Zannier, Lucia Sorba, Fabio Beltram, Stefano Roddaro, Francesco Giazotto, Stefan Heun

Abstract: Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former,… ▽ More Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin-orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to T_c~8K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin-orbit coherence length or supercurrent amplitude. △ Less

Submitted 26 September, 2019; originally announced September 2019.

Comments: 6 pages, 5 figures (Proceeding of the SPIE conference)

Journal ref: Spintronics XII, Proc. of SPIE Vol. 11090, 110903Z (2019)

Enhanced ambient stability of exfoliated black phosphorus by passivation with nickel nanoparticles

Authors: Maria Caporali, Manuel Serrano-Ruiz, Francesca Telesio, Stefan Heun, Alberto Verdini, Albano Cossaro, Matteo Dal Miglio, Andrea Goldoni, Maurizio Peruzzini

Abstract: Since its discovery, the environmental instability of exfoliated black phosphorus (2D bP) has emerged as a challenge that hampers its wide application in chemistry, physics, and materials science. Many studies have been carried out to overcome this drawback. Here we show a relevant enhancement of ambient stability in few-layer bP decorated with nickel nanoparticles as compared to pristine bP. In d… ▽ More Since its discovery, the environmental instability of exfoliated black phosphorus (2D bP) has emerged as a challenge that hampers its wide application in chemistry, physics, and materials science. Many studies have been carried out to overcome this drawback. Here we show a relevant enhancement of ambient stability in few-layer bP decorated with nickel nanoparticles as compared to pristine bP. In detail, the behavior of the Ni-functionalized material exposed to ambient conditions in the dark is accurately studied by TEM (Transmission Electron Microscopy), Raman Spectroscopy, and high resolution X-ray Photoemission and Absorption Spectroscopy. These techniques provide a morphological and quantitative insight of the oxidation process taking place at the surface of the bP flakes. In the presence of Ni NPs, the decay time of 2D bP to phosphorus oxides is more than three time slower compared to pristine bP, demonstrating an improved structural stability within twenty months of observation. △ Less

Submitted 1 August, 2019; originally announced August 2019.

Journal ref: Nanotechnology 31 (2020) 275708

Ohmic contact engineering in few-layer black Phosphorus field effect transistors

Authors: Francesca Telesio, Gwenael le Gal, Manuel Serrano-Ruiz, Federico Prescimone, Stefano Toffanin, Maurizio Peruzzini, Stefan Heun

Abstract: Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two materials to the metallization of the layered material below the contacts. In black phosphorus (bP), a further challenge is its high reactivity to oxygen… ▽ More Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two materials to the metallization of the layered material below the contacts. In black phosphorus (bP), a further challenge is its high reactivity to oxygen and moisture, since the presence of uncontrolled oxidation can substantially change the behavior of the contacts. In this study, we investigate the influence of the metal used for the contacts to bP against the variability between different flakes and different samples, using three of the most used metals as contacts: Chromium, Titanium, and Nickel. Using the transfer length method, from an analysis of ten devices, both at room temperature and at low temperature, Ni results to be the best metal for Ohmic contacts to bP, providing the lowest contact resistance and minimum scattering between different devices. Moreover, we investigate the gate dependence of the current-voltage characteristics of these devices. In the accumulation regime, we observe good linearity for all metals investigated. △ Less

Submitted 14 May, 2019; originally announced May 2019.

Comments: 30 pages, 4 figures

Journal ref: Nanotechnology 31 (2020) 334002

Tuning hydrogen adsorption on graphene by gate voltage

Authors: Yuya Murata, Arrigo Calzolari, Stefan Heun

Abstract: In order to realize applications of hydrogen-adsorbed graphene, a main issue is how to control hydrogen adsorption/desorption at room temperature. In this study, we demonstrate the possibility to tune hydrogen adsorption on graphene by applying a gate voltage. The influence of the gate voltage on graphene and its hydrogen adsorption properties was investigated by electrical transport measurements,… ▽ More In order to realize applications of hydrogen-adsorbed graphene, a main issue is how to control hydrogen adsorption/desorption at room temperature. In this study, we demonstrate the possibility to tune hydrogen adsorption on graphene by applying a gate voltage. The influence of the gate voltage on graphene and its hydrogen adsorption properties was investigated by electrical transport measurements, scanning tunneling microscopy, and density functional theory calculations. We show that more hydrogen adsorbs on graphene with negative gate voltage (p-type do**), compared to that without gate voltage or positive gate voltage (n-type do**). Theoretical calculations explain the gate voltage dependence of hydrogen adsorption as modifications of the adsorption energy and diffusion barrier of hydrogen on graphene by charge do**. △ Less

Submitted 6 May, 2019; originally announced May 2019.

Journal ref: J. Phys. Chem. C 2018, 122, 11591-11597

A sensitive calorimetric technique to study energy (heat) exchange at the nano-scale

Authors: Luca Basta, Stefano Veronesi, Yuya Murata, Zoe Dubois, Neeraj Mishra, Filippo Fabbri, Camilla Coletti, Stefan Heun

Abstract: Every time a chemical reaction occurs, an energy exchange between reactants and environment exists, which is defined as the enthalpy of the reaction. In the last decades, research has resulted in an increasing number of devices at the micro- or nano-scale. Sensors, catalyzers, and energy storage systems are more and more developed as nano-devices which represent the building blocks for commercial… ▽ More Every time a chemical reaction occurs, an energy exchange between reactants and environment exists, which is defined as the enthalpy of the reaction. In the last decades, research has resulted in an increasing number of devices at the micro- or nano-scale. Sensors, catalyzers, and energy storage systems are more and more developed as nano-devices which represent the building blocks for commercial "macroscopic" objects. A general method for the direct evaluation of the energy balance of such systems is not available at present. Calorimetry is a powerful tool to investigate energy exchange, but it usually needs macroscopic sample quantities. Here we report on the development of an original experimental setup able to detect temperature variations as low as 10 mK in a sample of 10 ng using a thermometer device having physical dimensions of 5x5 mm2. The technique has been utilized to measure the enthalpy release during the adsorption process of H2 on a titanium decorated monolayer graphene. The sensitivity of these thermometers is high enough to detect a hydrogen uptake of 10^(-10) moles, corresponding to 0.2 ng, with an enthalpy release of about 23 uJ. The experimental setup allows, in perspective, the scalability to even smaller sizes. △ Less

Submitted 29 April, 2019; originally announced April 2019.

Journal ref: Nanoscale, 2018, 10, 10079

A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices

Authors: Maurizio Peruzzini, Roberto Bini, Margherita Bolognesi, Maria Caporali, Matteo Ceppatelli, Francesca Cicogna, Serena Coiai, Stefan Heun, Andrea Ienco, Inigo Iglesias Benito, Abhishek Kumar, Gabriele Manca, Elisa Passaglia, Demetrio Scelta, Manuel Serrano-Ruiz, Francesca Telesio, Stefano Toffanin, Matteo Vanni

Abstract: Phosphorene, the 2D material derived from black phosphorus, has recently attracted a lot of interest for its properties, suitable for applications in material science. In particular, the physical features and the prominent chemical reactivity on its surface render this nanolayered substrate particularly promising for electrical and optoelectronic applications. In addition, being a new potential li… ▽ More Phosphorene, the 2D material derived from black phosphorus, has recently attracted a lot of interest for its properties, suitable for applications in material science. In particular, the physical features and the prominent chemical reactivity on its surface render this nanolayered substrate particularly promising for electrical and optoelectronic applications. In addition, being a new potential ligand for metals, it opens the way for a new role of the inorganic chemistry in the 2D world, with special reference to the field of catalysis. The aim of this review is to summarize the state of the art in this subject and to present our most recent results in preparation, functionalization and use of phosphorene and its decorated derivatives. In particular, we discuss several key points, which are currently under investigation: the synthesis, the characterization by theoretical calculations, the high pressure behaviour of black phosphorus, as well as decoration with nanoparticles and encapsulation in polymers. Finally, device fabrication and electrical transport measurements are overviewed on the basis of recent literature and new results collected in our laboratories. △ Less

Submitted 28 March, 2019; originally announced March 2019.

Journal ref: Eur. J. Inorg. Chem. 2019, 1476 - 1494

Full electrostatic control of quantum interference in an extended trenched Josephson junction

Authors: Stefano Guiducci, Matteo Carrega, Fabio Taddei, Giorgio Biasiol, Hervé Courtois, Fabio Beltram, Stefan Heun

Abstract: Hybrid semiconductor/superconductor devices constitute an important platform for a wide range of applications, from quantum computing to topological-state-based architectures. Here, we demonstrate full modulation of the interference pattern in a superconducting interference device with two parallel islands of ballistic InAs quantum wells separated by a trench, by acting independently on two side-g… ▽ More Hybrid semiconductor/superconductor devices constitute an important platform for a wide range of applications, from quantum computing to topological-state-based architectures. Here, we demonstrate full modulation of the interference pattern in a superconducting interference device with two parallel islands of ballistic InAs quantum wells separated by a trench, by acting independently on two side-gates. This so far unexplored geometry enables us to tune the device with high precision from a SQUID-like to a Fraunhofer-like behavior simply by electrostatic gating, without the need for an additional in-plane magnetic field. These measurements are successfully analyzed within a theoretical model of an extended tunnel Josephson junction, taking into account the focusing factor of the setup. The impact of these results on the design of novel devices is discussed. △ Less

Submitted 7 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. B 99, 235419 (2019)

Black Phosphorus/Palladium Nanohybrid: Unraveling the Nature of P-Pd Interaction and Application in Selective Hydrogenation

Authors: Matteo Vanni, Manuel Serrano-Ruiz, Francesca Telesio, Stefan Heun, Martina Banchelli, Paolo Matteini, Antonio Massilimiliano Mio, Giuseppe Nicotra, Corrado Spinella, Stefano Caporali, Andrea Giaccherini, Francesco d'Acapito, Maria Caporali, Maurizio Peruzzini

Abstract: The burgeoning interest in 2D black phosphorus (bP) contributes to expand its applications in countless fields. In the present study, 2D bP is used as a support for homogeneously dispersed palladium nanoparticles directly grown on it by a wet chemical process. EELS-STEM analysis evidences a strong interaction between palladium and P atoms of bP nanosheets. A quantitative evaluation of this interac… ▽ More The burgeoning interest in 2D black phosphorus (bP) contributes to expand its applications in countless fields. In the present study, 2D bP is used as a support for homogeneously dispersed palladium nanoparticles directly grown on it by a wet chemical process. EELS-STEM analysis evidences a strong interaction between palladium and P atoms of bP nanosheets. A quantitative evaluation of this interaction comes from XAS measurements that find out a very short Pd-P distance of 2.26 Å proving for the first time the existence of an unprecedented Pd-P coordination bond of covalent nature. Additionally, the average Pd-P coordination number of about 1.7 reveals that bP acts as a polydentate phosphine ligand towards the surface Pd atoms of the nanoparticles, thus preventing their agglomeration and inferring structural stability. These unique properties result in a superior performance in the catalytic hydrogenation of chloronitroarenes to chloroaniline, where a higher chemoselectivity in comparison to other heterogeneous catalyst based on palladium has been observed. △ Less

Submitted 6 March, 2019; originally announced March 2019.

Journal ref: Chem. Mater. 2019, 31, 5075-5080

Surface structures of graphene covered Cu (103)

Authors: Yui Ogawa, Yuya Murata, Satoru Suzuki, Hiroki Hibino, Stefan Heun, Yoshitaka Taniyasu, Kazuhide Kumakura

Abstract: We studied the surface structures of chemical vapor deposited (CVD) graphene on Cu(103). The graphene covered Cu surface had (103) facets parallel to the Cu[010] direction, on which triangular patterns were formed. In contrast, the bare Cu surface showed no facets. Post-growth thermal annealing in an ultra-high vacuum induced surface changes on the Cu(103) facets. The reorganization of the Cu surf… ▽ More We studied the surface structures of chemical vapor deposited (CVD) graphene on Cu(103). The graphene covered Cu surface had (103) facets parallel to the Cu[010] direction, on which triangular patterns were formed. In contrast, the bare Cu surface showed no facets. Post-growth thermal annealing in an ultra-high vacuum induced surface changes on the Cu(103) facets. The reorganization of the Cu surface by the post-growth thermal annealing led to a change in the lattice strain and hole do** level of the CVD-grown graphene. △ Less

Submitted 4 September, 2018; originally announced September 2018.

Journal ref: Japanese Journal of Applied Physics 57, 100301 (2018)

STM Study of Exfoliated Few Layer Black Phosphorus Annealed in Ultrahigh Vacuum

Authors: Abhishek Kumar, F. Telesio, S. Forti, A. Al-Temimy, C. Coletti, M. Serrano-Ruiz, M. Caporali, M. Peruzzini, F. Beltram, S. Heun

Abstract: Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they are hampered by bP's high reactivity to oxygen and water, a major challenge to scanning tunneling microscopy (STM) experiments. As a consequence, the large majority of these studies were performed by cleaving a bulk crys… ▽ More Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they are hampered by bP's high reactivity to oxygen and water, a major challenge to scanning tunneling microscopy (STM) experiments. As a consequence, the large majority of these studies were performed by cleaving a bulk crystal in situ. Here we present a study of surface modifications on exfoliated bP flakes upon consecutive annealing steps, up to 550 C, well above the sublimation temperature of bP. In particular, our attention is focused on the temperature range 375 C - 400 C, when sublimation starts, and a controlled desorption from the surface occurs alongside with the formation of characteristic well-aligned craters. There is an open debate in the literature about the crystallographic orientation of these craters, whether they align along the zigzag or the armchair direction. Thanks to the atomic resolution provided by STM, we are able to identify the orientation of the craters with respect to the bP crystal: the long axis of the craters is aligned along the zigzag direction of bP. This allows us to solve the controversy, and, moreover, to provide insight in the underlying desorption mechanism leading to crater formation. △ Less

Submitted 28 August, 2018; originally announced August 2018.

Journal ref: 2D Mater. 6 (2019) 015005

Non-Classical Longitudinal Magneto-Resistance in Anisotropic Black Phosphorus

Authors: Francesca Telesio, Nicholas Hemsworth, William Dickerson, Matei Petrescu, Vahid Tayari, Oulin Yu, David Graf, Manuel Serrano-Ruiz, Maria Caporali, Maurizio Peruzzini, Matteo Carrega, Thomas Szkopek, Stefan Heun, Guillaume Gervais

Abstract: Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The crystallographic directions of the bP crystal were determined by Raman spectroscopy, with the zigzag axis found within 5° of the S-D axis, and the armchair axis in the ortho… ▽ More Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The crystallographic directions of the bP crystal were determined by Raman spectroscopy, with the zigzag axis found within 5° of the S-D axis, and the armchair axis in the orthogonal planar direction. A transverse magneto-resistance (TMR) as well as a classically-forbidden longitudinal magneto-resistance (LMR) are observed. Both are found to be strongly anisotropic and non-monotonic with increasing in-plane field. Surprisingly, the relative magnitude (in %) of the positive LMR is larger than the TMR above $\sim$32 T. Considering the known anisotropy of bP whose zigzag and armchair effective masses differ by a factor of approximately seven, our experiment strongly suggests this LMR to be a consequence of the anisotropic Fermi surface of bP. △ Less

Submitted 5 December, 2018; v1 submitted 2 August, 2018; originally announced August 2018.

Comments: 12 pages, 8 figures

Journal ref: Phys. Status Solidi RRL 14 (2020) 1900347

Quantum Hall Effect in a Josephson Junction

Authors: Stefano Guiducci, Matteo Carrega, Giorgio Biasiol, Lucia Sorba, Fabio Beltram, Stefan Heun

Abstract: Hybrid superconductor/semiconductor devices constitute a powerful platform where intriguing topological properties can be investigated. Here we present fabrication methods and analysis of Josephson junctions formed by a high-mobility InAs quantum-well bridging two Nb superconducting contacts. We demonstrate supercurrent flow with transport measurements, critical temperature of 8.1 K, and critical… ▽ More Hybrid superconductor/semiconductor devices constitute a powerful platform where intriguing topological properties can be investigated. Here we present fabrication methods and analysis of Josephson junctions formed by a high-mobility InAs quantum-well bridging two Nb superconducting contacts. We demonstrate supercurrent flow with transport measurements, critical temperature of 8.1 K, and critical fields of the order of 3 T. Modulation of supercurrent amplitude can be achieved by acting on two side gates lithographed close to the two-dimensional electron gas. Low-temperature measurements reveal also well-developed quantum Hall plateaus, showing clean quantization of Hall conductance. Here the side gates can be used to manipulate channel width and electron carrier density in the device. These findings demonstrate the potential of these hybrid devices to investigate the coexistence of superconductivity and Quantum Hall effect and constitute the first step in the development of new device architectures hosting topological states of matter. △ Less

Submitted 8 May, 2018; originally announced May 2018.

Journal ref: Phys. Status Solidi RRL 13 (2019) 1800222

Polymer-based black phosphorus (bP) hybrid materials by in situ radical polymerization: an effective tool to exfoliate bP and stabilize bP nanoflakes

Authors: Elisa Passaglia, Francesca Cicogna, Federica Costantino, Serena Coiai, Stefano Legnaioli, Giulia Lorenzetti, Silvia Borsacchi, Marco Geppi, Francesca Telesio, Stefan Heun, Andrea Ienco, Manuel Serrano-Ruiz, Maurizio Peruzzini

Abstract: Black phosphorus (bP) has been recently investigated for next generation nanoelectronic multifunctional devices. However, the intrinsic instability of exfoliated bP (the bP nanoflakes) towards both moisture and air has so far overshadowed its practical implementation. In order to contribute to fill this gap, we report here the preparation of new hybrid polymer-based materials where bP nanoflakes e… ▽ More Black phosphorus (bP) has been recently investigated for next generation nanoelectronic multifunctional devices. However, the intrinsic instability of exfoliated bP (the bP nanoflakes) towards both moisture and air has so far overshadowed its practical implementation. In order to contribute to fill this gap, we report here the preparation of new hybrid polymer-based materials where bP nanoflakes exhibit a significantly improved stability. The new materials have been prepared by different synthetic paths including: i) the mixing of conventionally liquid-phase exfoliated bP (in DMSO) with PMMA solution; ii) the direct exfoliation of bP in a polymeric solution; iii) the in situ radical polymerization after exfoliating bP in the liquid monomer (methyl methacrylate, MMA). This last methodology concerns the preparation of stable suspensions of bPn-MMA by sonication-assisted liquid phase exfoliation (LPE) of bP in the presence of MMA followed by radical polymerization. The hybrids characteristics have been compared in order to evaluate the bP dispersion and the effectiveness of the bPn interfacial interactions with polymer chains aimed at their long-term environmental stabilization. The passivation of bPn results particularly effective when the hybrid material is prepared by in situ polymerization. By using this synthetic methodology, the nanoflakes, even if with a gradient of dispersion (size of aggregates), preserve their chemical structure from oxidation (as proved by both Raman and 31P-Solid State NMR studies) and are particularly stable to air and UV light exposure. △ Less

Submitted 11 April, 2018; originally announced April 2018.

Journal ref: Chem. Mater. 2018, 30, 2036-2048

Phosphorus oxide gate dielectric for black phosphorus field effect transistors

Authors: W. Dickerson, V. Tayari, I. Fakih, A. Korinek, M. Caporali, M. Serrano-Ruiz, M. Peruzzini, S. Heun, G. A. Botton, T. Szkopek

Abstract: The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of… ▽ More The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2/Vs in ambient conditions, which we attribute to the low defect density of the bP/POx interface. △ Less

Submitted 10 April, 2018; originally announced April 2018.

Journal ref: APPLIED PHYSICS LETTERS 112, 173101 (2018)

Hybrid 2D Black Phosphorus/Polymer Materials: New Platforms for Device Fabrication

Authors: Francesca Telesio, Elisa Passaglia, Francesca Cicogna, Federica Costantino, Manuel Serrano-Ruiz, Maurizio Peruzzini, Stefan Heun

Abstract: Hybrid materials, containing a 2D filler embedded in a polymeric matrix, are an interesting platform for several applications, because of the variety of properties that the filler can impart to the polymer matrix when dispersed at the nanoscale. Moreover, novel properties could arise from the interaction between the two. Mostly the bulk properties of these materials have been studied so far, espec… ▽ More Hybrid materials, containing a 2D filler embedded in a polymeric matrix, are an interesting platform for several applications, because of the variety of properties that the filler can impart to the polymer matrix when dispersed at the nanoscale. Moreover, novel properties could arise from the interaction between the two. Mostly the bulk properties of these materials have been studied so far, especially focusing on how the filler changes the polymeric matrix properties. Here we propose a complete change of perspective by using the hybrid nanocomposite material as a platform suitable to engineer the properties of the filler and to exploit its potential in the fabrication of devices. As a proof of concept of the versatility and potentiality of the new method, we applied this approach to prepare black phosphorus nanocomposites through its dispersion in poly (methyl methacrylate). Black phosphorus is a very interesting 2D material, whose application have so far been limited by its very high reactivity to oxygen and water. In this respect, we show that electronic-grade black phosphorus flakes, already embedded in a protecting matrix since their exfoliation from the bulk material, are endowed with significant increased stability, and can be further processed into devices without degrading their properties. △ Less

Submitted 4 February, 2018; originally announced February 2018.

Journal ref: Nanotechnology 29 (2018) 295601

Perfecting the Growth and Transfer of Large Single-Crystal CVD Graphene: A Platform Material for Optoelectronic Applications

Authors: Vaidotas Miseikis, Shaohua Xiang, Stefano Roddaro, Stefan Heun, Camilla Coletti

Abstract: In this work we demonstrate the synthesis of millimetre-sized single-crystals of graphene, achievable in a commercially-available cold-wall CVD reactor, and several different approaches to transfer it from the growth substrate to a target substrate of choice. We confirm the high crystal quality of this material using various characterisation techniques, including optical and scanning electron micr… ▽ More In this work we demonstrate the synthesis of millimetre-sized single-crystals of graphene, achievable in a commercially-available cold-wall CVD reactor, and several different approaches to transfer it from the growth substrate to a target substrate of choice. We confirm the high crystal quality of this material using various characterisation techniques, including optical and scanning electron microscopy as well as Raman spectroscopy. By performing field effect and quantum Hall effect measurements we demonstrate that the electronic properties of such single-crystals are comparable to those of ideal mechanically exfoliated flakes of graphene. Several applications of this high-quality material are also reviewed. △ Less

Submitted 14 November, 2017; originally announced November 2017.

Comments: 7 pages, 8 figures

Journal ref: In: Morandi V., Ottaviano L. (eds) GraphITA. Carbon Nanostructures. Springer, Cham (2017)

Revealing the nature of defects in quasi free standing mono-layer graphene on SiC(0001) by means of Density Functional Theory

Authors: Tommaso Cavallucci, Yuya Murata, Makoto Takamura, Hiroki Hibino, Stefan Heun, Valentina Tozzini

Abstract: Quasi free standing monolayer graphene (QFMLG) grown on SiC by selective Si evaporation from the Si-rich SiC(0001) face and H intercalation displays irregularities in STM and AFM analysis, appearing as localized features, which we previously identified as vacancies in the H layer coverage [Y Murata, et al. Nano Res, in press, DOI: 10.1007/s12274-017-1697-x]. The size, shape, brightness, location,… ▽ More Quasi free standing monolayer graphene (QFMLG) grown on SiC by selective Si evaporation from the Si-rich SiC(0001) face and H intercalation displays irregularities in STM and AFM analysis, appearing as localized features, which we previously identified as vacancies in the H layer coverage [Y Murata, et al. Nano Res, in press, DOI: 10.1007/s12274-017-1697-x]. The size, shape, brightness, location, and concentration of these features, however, are variable, depending on the hydrogenation conditions. In order to shed light on the nature of these features, in this work we perform a systematic Density Functional Theory study on the structural and electronic properties of QFMLG with defects in the H coverage arranged in different configurations including up to 13 vacant H atoms, and show that these generate localized electronic states with specific electronic structure. Based on the comparison of simulated and measured STM images we are able to associate different vacancies of large size (7-13 missing H) to the different observed features. The presence of large vacancies is in agreement with the tendency of single H vacancies to aggregate, as demonstrated here by DFT results. This gives some hints into the hydrogenation process. Our work unravels the structural diversity of defects of H coverage in QFMLG and provides operative ways to interpret the variety in the STM images. The energy of the localized states generated by these vacancies is tunable by means of their size and shape, suggesting applications in nano- and opto-electronics. △ Less

Submitted 11 October, 2017; originally announced October 2017.

Journal ref: Carbon 130 (2018) 466-474

Manipulating quantum Hall edge channels in graphene through Scanning Gate Microscopy

Authors: Lennart Bours, Stefano Guiducci, Alina Mreńca-Kolasińska, Bartłomiej Szafran, Jan C Maan, Stefan Heun

Abstract: We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show full control over the edge channels and are able, due to the spatial variation of the tip potential, to separate co-propagating edge channels in the Hall bar, cre… ▽ More We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show full control over the edge channels and are able, due to the spatial variation of the tip potential, to separate co-propagating edge channels in the Hall bar, creating junctions between regions of different charge carrier density, that have not been observed in devices based on top- or split-gates. The solution of the corresponding quantum scattering problem is presented to substantiate these results, and possible follow-up experiments are discussed. △ Less

Submitted 12 October, 2017; v1 submitted 10 July, 2017; originally announced July 2017.

Comments: 10 pages, 12 figures

Journal ref: Phys. Rev. B 96, 195423 (2017)

Atomic and Electronic Structure of Si Dangling Bonds in Quasi-Free-Standing Monolayer Graphene

Authors: Yuya Murata, Tommaso Cavallucci, Valentina Tozzini, Niko Pavliček, Leo Gross, Gerhard Meyer, Makoto Takamura, Hiroki Hibino, Fabio Beltram, Stefan Heun

Abstract: Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study the atomic and electronic structure of Si dangling bonds in QFMLG using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and density functional… ▽ More Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study the atomic and electronic structure of Si dangling bonds in QFMLG using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and density functional theory (DFT) calculations. Two types of defects with different contrast were observed on a flat terrace by STM and AFM. Their STM contrast varies with bias voltage. In STS, they showed characteristic peaks at different energies, 1.1 and 1.4 eV. Comparison with DFT calculations indicates that they correspond to clusters of 3 and 4 Si dangling bonds, respectively. The relevance of these results for the optimization of graphene synthesis is discussed. △ Less

Submitted 5 June, 2017; originally announced June 2017.

Journal ref: Nano Research 2018, 11(2) 864-873

Li-intercalated Graphene on SiC(0001): an STM study

Authors: Sara Fiori, Yuya Murata, Stefano Veronesi, Antonio Rossi, Camilla Coletti, Stefan Heun

Abstract: We present a systematical study via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) on the effect of the exposure of Lithium (Li) on graphene on silicon carbide (SiC). We have investigated Li deposition both on epitaxial monolayer graphene and on buffer layer surfaces on the Si-face of SiC. At room temperature, Li immediately intercalates at the interface between the… ▽ More We present a systematical study via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) on the effect of the exposure of Lithium (Li) on graphene on silicon carbide (SiC). We have investigated Li deposition both on epitaxial monolayer graphene and on buffer layer surfaces on the Si-face of SiC. At room temperature, Li immediately intercalates at the interface between the SiC substrate and the buffer layer and transforms the buffer layer into a quasi-free-standing graphene. This conclusion is substantiated by LEED and STM evidence. We show that intercalation occurs through the SiC step sites or graphene defects. We obtain a good quantitative agreement between the number of Li atoms deposited and the number of available Si bonds at the surface of the SiC crystal. Through STM analysis, we are able to determine the interlayer distance induced by Li-intercalation at the interface between the SiC substrate and the buffer layer. △ Less

Submitted 5 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 125429 (2017)

Heterogeneous nucleation of catalyst-free InAs nanowires on silicon

Authors: U. P. Gomes, D. Ercolani, V. Zannier, S. Battiato, E. Ubyivovk, V. Mikhailovskii, Y. Murata, S. Heun, F. Beltram, L. Sorba

Abstract: We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites… ▽ More We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but by careful choice of annealing and growth temperature allows to strongly reduce the relative density of these islands and to realize samples with high nanowire yield. △ Less

Submitted 18 January, 2017; originally announced January 2017.

Journal ref: Nanotechnology 28 (2017) 065603

MBE growth of self-assisted InAs nanowires on graphene

Authors: Jung-Hyun Kang, Yuval Ronen, Yonatan Cohen, Domenica Convertino, Antonio Rossi, Camilla Coletti, Stefan Heun, Lucia Sorba, Perla Kacman, Hadas Shtrikman

Abstract: Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs… ▽ More Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, Multiple Andreev Reflections were observed, and an inelastic scattering length of about 900 nm was derived. △ Less

Submitted 3 October, 2016; originally announced October 2016.

Journal ref: Semicond. Sci. Technol. 31 (2016) 115005

Decoration of exfoliated black phosphorus with nickel nanoparticles and application in catalysis

Authors: Maria Caporali, Manuel Serrano-Ruiz, Francesca Telesio, Stefan Heun, Giuseppe Nicotra, Corrado Spinella, Maurizio Peruzzini

Abstract: Nickel nanoparticles were dispersed on the surface of exfoliated black phosphorus and the resulting nanohybrid Ni/2DBP showed an improved stability respect to pristine 2D BP when kept in ambient conditions in the darkness. Ni/2DBP was applied as catalyst in the semihydrogenation of phenylacetylene and exhibited high conversion and selectivity towards styrene. These features were preserved after re… ▽ More Nickel nanoparticles were dispersed on the surface of exfoliated black phosphorus and the resulting nanohybrid Ni/2DBP showed an improved stability respect to pristine 2D BP when kept in ambient conditions in the darkness. Ni/2DBP was applied as catalyst in the semihydrogenation of phenylacetylene and exhibited high conversion and selectivity towards styrene. These features were preserved after recycling tests revealing the high stability of the nanohybrid. △ Less

Submitted 28 August, 2017; v1 submitted 16 September, 2016; originally announced September 2016.

Comments: Corrected misspelled author name

Journal ref: Chem. Commun. 53 (2017) 10946

Inter-Edge Backscattering in Buried Split-Gate-Defined Graphene Quantum Point Contacts

Authors: Shaohua Xiang, Alina Mrenca-Kolasinska, Vaidotas Miseikis, Stefano Guiducci, Krzysztof Kolasinski, Camilla Coletti, Bartlomiej Szafran, Fabio Beltram, Stefano Roddaro, Stefan Heun

Abstract: Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system subject to a strong magnetic field. In the present work, we demonstrate a buried split-gate architecture and use it to control electron conduction in large-scale si… ▽ More Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system subject to a strong magnetic field. In the present work, we demonstrate a buried split-gate architecture and use it to control electron conduction in large-scale single-crystal monolayer graphene grown by chemical vapor deposition. The control of the edge trajectories is demonstrated by the observation of various fractional quantum resistances, as a result of a controllable inter-edge scattering. Experimental data are successfully modeled both numerically and within the Landauer-Buettiker formalism. Our architecture is particularly promising and unique in view of the investigation of quantum transport via scanning probe microscopy, since graphene constitutes the topmost layer of the device. For this reason, it can be approached and perturbed by a scanning probe down to the limit of mechanical contact. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 94, 155446 (2016)