Sustained biexciton emission in colloidal quantum wells assisted by dopant-host interaction
Authors:
Junhong Yu,
Manoj Sharma,
Mingjie Li,
Pedro Ludwig Hernandez-Martinez,
Savas Delikanli,
Ashma Sharma,
Yemliha Altintas,
Chathuranga Hettiarachchi,
TzeChien Sum,
Hilmi Volkan Demir,
Cuong Dang
Abstract:
Biexcitons have been considered as one of the fundamental building blocks for quantum technology because of its overwhelming advantages in generating entangled photon pairs. Although many-body complexes have been demonstrated recently in mono-layer transition metal dichalcogenides (TMDs), the low emission efficiency and scale up capability hinder their applications. Colloidal nanomaterials, with h…
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Biexcitons have been considered as one of the fundamental building blocks for quantum technology because of its overwhelming advantages in generating entangled photon pairs. Although many-body complexes have been demonstrated recently in mono-layer transition metal dichalcogenides (TMDs), the low emission efficiency and scale up capability hinder their applications. Colloidal nanomaterials, with high quantum efficiency and ease of synthesis/processing, are regarded to be an appealing complement to TMDs for biexciton sources. However, a progress towards biexciton emission in colloidal nanomaterials has been challenging largely by small binding energy and ultrafast non-radiative multiexciton recombination. Here, we demonstrate room-temperature biexciton emission in Cu-doped CdSe colloidal quantum wells (CQWs) under continuous-wave excitation with intensity as low as ~10 W/cm2. The characteristics of radiative biexciton states are investigated by their super linear emission with respect to excitation power, thermal stability and transient photophysics. The interaction between the quantum confined host carriers and the dopant ions increases biexciton binding energy by two folds compared to the undoped CQWs. Such strong binding energy together with suppressed Auger recombination and efficient, spectrally narrow photoluminescence in a quasi-2D semiconductor enables sustained biexciton emission at room temperature, providing a potential solution for efficient, scalable and stand-alone quantum devices.
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Submitted 27 May, 2019;
originally announced May 2019.
Tuning the properties of complex transparent conducting oxides: role of crystal symmetry, chemical composition and carrier generation
Authors:
Julia E. Medvedeva,
Chaminda L. Hettiarachchi
Abstract:
The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and oxygen deficient In$_2$O$_3$, $α$- and $β$-Ga$_2$O$_3$, rock salt and wurtzite ZnO, and layered InGaZnO$_4$ reveals the role of the following factors which gover…
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The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and oxygen deficient In$_2$O$_3$, $α$- and $β$-Ga$_2$O$_3$, rock salt and wurtzite ZnO, and layered InGaZnO$_4$ reveals the role of the following factors which govern the transport and optical properties of these TCO materials: (i) the crystal symmetry of the oxides, including both the oxygen coordination and the long-range structural anisotropy; (ii) the electronic configuration of the cation(s), specifically, the type of orbital(s) -- $s$, $p$ or $d$ -- which form the conduction band; and (iii) the strength of the hybridization between the cation's states and the p-states of the neighboring oxygen atoms. The results not only explain the experimentally observed trends in the electrical conductivity in the single-cation TCO, but also demonstrate that multicomponent oxides may offer a way to overcome the electron localization bottleneck which limits the charge transport in wide-bandgap main-group metal oxides. Further, the advantages of aliovalent substitutional do** -- an alternative route to generate carriers in a TCO host -- are outlined based on the electronic band structure calculations of Sn, Ga, Ti and Zr-doped InGaZnO$_4$. We show that the transition metal dopants offer a possibility to improve conductivity without compromising the optical transmittance.
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Submitted 25 February, 2010;
originally announced February 2010.
