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Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
Authors:
Jonathan Körber,
Jonah Heiler,
Philipp Fuchs,
Philipp Flad,
Erik Hesselmeier,
Pierre Kuna,
Jawad Ul-Hassan,
Wolfgang Knolle,
Christoph Becher,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based opt…
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Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based optical antenna. The structure consists of a silver-coated, 135 nm thin 4H-SiC membrane functioning as a planar cavity with a broadband resonance yielding a theoretical photon collection enhancement factor of 34. The planar geometry allows us to identify over 20 single V2 centers at room temperature with a mean (maximum) count rate enhancement factor of 9 (15). Moreover, we observe 10 V2 centers with a mean absorption linewidth below 80MHz at cryogenic temperatures. These results demonstrate a photon collection enhancement that is robust to the lateral emitter position.
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Submitted 1 July, 2024; v1 submitted 12 June, 2024;
originally announced June 2024.
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High fidelity optical readout of a nuclear spin qubit in Silicon Carbide
Authors:
Erik Hesselmeier,
Oliver von Berg,
Pierre Kuna,
Wolfgang Knolle,
Florian Kaiser,
Nguyen Tien Son,
Misagh Ghezellou,
Jawad Ul-Hassan,
Vadim Vorobyov,
Jörg Wrachtrup
Abstract:
Quantum state readout is a key requirement for a successful qubit platform. In this work we demonstrate a high fidelity quantum state readout of a V2 center nuclear spin based on a repetitive readout technique. We demonstrate up to 99.5$\,\%$ readout fidelity and 99$\,\%$ for state preparation. Using this efficient readout we initialise the nuclear spin by measurement and demonstrate its Rabi and…
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Quantum state readout is a key requirement for a successful qubit platform. In this work we demonstrate a high fidelity quantum state readout of a V2 center nuclear spin based on a repetitive readout technique. We demonstrate up to 99.5$\,\%$ readout fidelity and 99$\,\%$ for state preparation. Using this efficient readout we initialise the nuclear spin by measurement and demonstrate its Rabi and Ramsey nutation. Finally, we use the nuclear spin as a long lived memory for quantum sensing application of weakly coupled diatomic nuclear spin bath.
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Submitted 8 March, 2024; v1 submitted 9 January, 2024;
originally announced January 2024.
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Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide
Authors:
Erik Hesselmeier,
Pierre Kuna,
István Takács,
Viktor Ivády,
Wolfgang Knolle,
Misagh Ghezellou,
Jawad Ul-Hassan,
Durga Dasari,
Florian Kaiser,
Vadim Vorobyov,
Jörg Wrachtrup
Abstract:
Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environment around single silicon vacancy color-centers (V2) in 4H-SiC. By using the electron spin-3/2 qudit as a 4 level sensor, we identify several groups of $^{29}$Si and $^{13}$C nuclear spins through their hyperfine interact…
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Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environment around single silicon vacancy color-centers (V2) in 4H-SiC. By using the electron spin-3/2 qudit as a 4 level sensor, we identify several groups of $^{29}$Si and $^{13}$C nuclear spins through their hyperfine interaction. We extract the major components of their hyperfine coupling via optical detected nuclear resonance, and assign them to shell groups in the crystal via the DFT simulations. We utilise the ground state level anti-crossing of the electron spin for dynamic nuclear polarization and achieve a nuclear spin polarization of up to $98\pm6\,\%$. We show that this scheme can be used to detect the nuclear magnetic resonance signal of individual spins and demonstrate their coherent control. Our work provides a detailed set of parameters for future use of SiC as a multi-qubit memory and quantum computing platform.
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Submitted 24 October, 2023;
originally announced October 2023.
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Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Authors:
Jonah Heiler,
Jonathan Körber,
Erik Hesselmeier,
Pierre Kuna,
Rainer Stöhr,
Philipp Fuchs,
Misagh Ghezellou,
Jawad Ul-Hassan,
Wolfgang Knolle,
Christoph Becher,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thi…
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Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to $0.25\,\rmμm$. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of $3-4\,\rmÅ$, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of $0.7 \,\rmμm$. For silicon vacancy centres in thinner membranes down to $0.25\,\rmμm$, we observe spectral wandering, however, optical linewidths remain below $200\,\rm MHz$, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring.
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Submitted 13 May, 2024; v1 submitted 19 October, 2023;
originally announced October 2023.
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The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics
Authors:
Di Liu,
Florian Kaiser,
Vladislav Bushmakin,
Erik Hesselmeier,
Timo Steidl,
Takeshi Ohshima,
Nguyen Tien Son,
Jawad Ul-Hassan,
Öney O. Soykal,
Jörg Wrachtrup
Abstract:
The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these color centers prevents us achieving the optimal operation conditions and reaching the maximum performance especia…
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The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these color centers prevents us achieving the optimal operation conditions and reaching the maximum performance especially when integrated within quantum photonics. Here, we establish all the relevant intrinsic spin dynamics of negatively charged $\rm V_{Si}^-$ center in 4H-SiC by an in-depth electronic fine structure modeling including intersystem-crossing and deshelving mechanisms. With carefully designed spin-dependent measurements, we obtain all previously unknown spin-selective radiative and non-radiative decay rates. To showcase the relevance of our work for integrated quantum photonics, we use the obtained rates to propose a realistic implementation of time-bin entangled multi-photon GHZ and cluster state generation. We find that up to 3-photon GHZ/cluster states are readily within reach using the existing nanophotonic cavity technology.
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Submitted 25 July, 2023;
originally announced July 2023.
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Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
Authors:
Charles Babin,
Rainer Stöhr,
Naoya Morioka,
Tobias Linkewitz,
Timo Steidl,
Raphael Wörnle,
Di Liu,
Erik Hesselmeier,
Vadim Vorobyov,
Andrej Denisenko,
Mario Hentschel,
Christian Gobert,
Patrick Berwian,
Georgy V. Astakhov,
Wolfgang Knolle,
Sridhar Majety,
Pranta Saha,
Marina Radulaski,
Nguyen Tien Son,
Jawad Ul-Hassan,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In par…
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Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.
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Submitted 29 September, 2021; v1 submitted 10 September, 2021;
originally announced September 2021.
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Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
Authors:
Naoya Morioka,
Charles Babin,
Roland Nagy,
Izel Gediz,
Erik Hesselmeier,
Di Liu,
Matthew Joliffe,
Matthias Niethammer,
Durga Dasari,
Vadim Vorobyov,
Roman Kolesov,
Rainer Stöhr,
Jawad Ul-Hassan,
Nguyen Tien Son,
Takeshi Ohshima,
Péter Udvarhelyi,
Gergő Thiering,
Adam Gali,
Jörg Wrachtrup,
Florian Kaiser
Abstract:
Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable…
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Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting photons from the ultra-stable zero-phonon line optical transitions, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system's intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system's spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on recently demonstrated coupled individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.
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Submitted 10 January, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
