Showing 1–50 of 58 results for author: Hersam, M C

An Autotuning-based Optimization Framework for Mixed-kernel SVM Classifications in Smart Pixel Datasets and Heterojunction Transistors

Authors: Xingfu Wu, Tupendra Oli, ustin H. Qian, Valerie Taylor, Mark C. Hersam, Vinod K. Sangwan

Abstract: Support Vector Machine (SVM) is a state-of-the-art classification method widely used in science and engineering due to its high accuracy, its ability to deal with high dimensional data, and its flexibility in modeling diverse sources of data. In this paper, we propose an autotuning-based optimization framework to quantify the ranges of hyperparameters in SVMs to identify their optimal choices, and… ▽ More Support Vector Machine (SVM) is a state-of-the-art classification method widely used in science and engineering due to its high accuracy, its ability to deal with high dimensional data, and its flexibility in modeling diverse sources of data. In this paper, we propose an autotuning-based optimization framework to quantify the ranges of hyperparameters in SVMs to identify their optimal choices, and apply the framework to two SVMs with the mixed-kernel between Sigmoid and Gaussian kernels for smart pixel datasets in high energy physics (HEP) and mixed-kernel heterojunction transistors (MKH). Our experimental results show that the optimal selection of hyperparameters in the SVMs and the kernels greatly varies for different applications and datasets, and choosing their optimal choices is critical for a high classification accuracy of the mixed kernel SVMs. Uninformed choices of hyperparameters C and coef0 in the mixed-kernel SVMs result in severely low accuracy, and the proposed framework effectively quantifies the proper ranges for the hyperparameters in the SVMs to identify their optimal choices to achieve the highest accuracy 94.6\% for the HEP application and the highest average accuracy 97.2\% with far less tuning time for the MKH application. △ Less

Submitted 26 June, 2024; originally announced June 2024.

Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing

Authors: Carlos G. Torres-Castanedo, Dominic P. Goronzy, Thang Pham, Anthony McFadden, Nicholas Materise, Paul Masih Das, Matthew Cheng, Dmitry Lebedev, Stephanie M. Ribet, Mitchell J. Walker, David A. Garcia-Wetten, Cameron J. Kopas, Jayss Marshall, Ella Lachman, Nikolay Zhelev, James A. Sauls, Joshua Y. Mutus, Corey Rae H. McRae, Vinayak P. Dravid, Michael J. Bedzyk, Mark C. Hersam

Abstract: Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potenti… ▽ More Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices. △ Less

Submitted 5 April, 2024; originally announced April 2024.

Enhanced Imaging of Electronic Hot Spots Using Quantum Squeezed Light

Authors: Haechan An, Ali Najjar Amiri, Dominic P. Goronzy, David A. Garcia Wetten, Michael J. Bedzyk, Ali Shakouri, Mark C. Hersam, Mahdi Hosseini

Abstract: Detecting electronic hot spots is important for understanding the heat dissipation and thermal management of electronic and semiconductor devices. Optical thermoreflective imaging is being used to perform precise temporal and spatial imaging of heat on wires and semiconductor materials. We apply quantum squeezed light to perform thermoreflective imaging on micro-wires, surpassing the shot-noise li… ▽ More Detecting electronic hot spots is important for understanding the heat dissipation and thermal management of electronic and semiconductor devices. Optical thermoreflective imaging is being used to perform precise temporal and spatial imaging of heat on wires and semiconductor materials. We apply quantum squeezed light to perform thermoreflective imaging on micro-wires, surpassing the shot-noise limit of classical approaches. We obtain a far-field temperature sensing accuracy of 42 mK after 50 ms of averaging and show that a $256\times256$ pixel image can be constructed with such sensitivity in 10 minutes. We can further obtain single-shot temperature sensing of 1.6 K after only 10 $\mathrm{μs}$ of averaging enabling dynamical study of heat dissipation. Not only do the quantum images provide accurate spatio-temporal information about heat distribution, but the measure of quantum correlation provides additional information, inaccessible by classical techniques, that can lead to a better understanding of the dynamics. We apply the technique to both Al and Nb microwires and discuss the applications of the technique in studying electron dynamics at low temperatures. △ Less

Submitted 22 March, 2024; originally announced March 2024.

All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance

Authors: Jiacheng Shi, Victor Lopez-Dominguez, Sevdenur Arpaci, Vinod K. Sangwan, Farzad Mahfouzi, **woong Kim, Jordan G. Athas, Mohammad Hamdi, Can Aygen, Charudatta Phatak, Mario Carpentieri, Jidong S. Jiang, Matthew A. Grayson, Nicholas Kioussis, Giovanni Finocchio, Mark C. Hersam, Pedram Khalili Amiri

Abstract: Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR)… ▽ More Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures were not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here we show three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes. △ Less

Submitted 23 November, 2023; originally announced November 2023.

Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation

Authors: Mustafa Bal, Akshay A. Murthy, Shaojiang Zhu, Francesco Crisa, Xinyuan You, Ziwen Huang, Tanay Roy, Jaeyel Lee, David van Zanten, Roman Pilipenko, Ivan Nekrashevich, Andrei Lunin, Daniel Bafia, Yulia Krasnikova, Cameron J. Kopas, Ella O. Lachman, Duncan Miller, Josh Y. Mutus, Matthew J. Reagor, Hilal Cansizoglu, Jayss Marshall, David P. Pappas, Kim Vu, Kameshwar Yadavalli, **-Su Oh , et al. (15 additional authors not shown)

Abstract: We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati… ▽ More We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different cap** materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When cap** niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes. △ Less

Submitted 24 January, 2024; v1 submitted 25 April, 2023; originally announced April 2023.

Journal ref: npj Quantum Inf 10, 43 (2024)

Roadmap for Unconventional Computing with Nanotechnology

Authors: Giovanni Finocchio, Jean Anne C. Incorvia, Joseph S. Friedman, Qu Yang, Anna Giordano, Julie Grollier, Hyunsoo Yang, Florin Ciubotaru, Andrii Chumak, Azad J. Naeemi, Sorin D. Cotofana, Riccardo Tomasello, Christos Panagopoulos, Mario Carpentieri, Peng Lin, Gang Pan, J. Joshua Yang, Aida Todri-Sanial, Gabriele Boschetto, Kremena Makasheva, Vinod K. Sangwan, Amit Ranjan Trivedi, Mark C. Hersam, Kerem Y. Camsari, Peter L. McMahon , et al. (26 additional authors not shown)

Abstract: In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing w… ▽ More In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing with nanotechnologies to guide future research, and this collection aims to fill that need. The authors provide a comprehensive roadmap for neuromorphic computing using electron spins, memristive devices, two-dimensional nanomaterials, nanomagnets, and various dynamical systems. They also address other paradigms such as Ising machines, Bayesian inference engines, probabilistic computing with p-bits, processing in memory, quantum memories and algorithms, computing with skyrmions and spin waves, and brain-inspired computing for incremental learning and problem-solving in severely resource-constrained environments. These approaches have advantages over traditional Boolean computing based on von Neumann architecture. As the computational requirements for artificial intelligence grow 50 times faster than Moore's Law for electronics, more unconventional approaches to computing and signal processing will appear on the horizon, and this roadmap will help identify future needs and challenges. In a very fertile field, experts in the field aim to present some of the dominant and most promising technologies for unconventional computing that will be around for some time to come. Within a holistic approach, the goal is to provide pathways for solidifying the field and guiding future impactful discoveries. △ Less

Submitted 27 February, 2024; v1 submitted 17 January, 2023; originally announced January 2023.

Comments: 80 pages accepted in Nano Futures

Journal ref: Nano Futures (2024)

Layer-dependent optically-induced spin polarization in InSe

Authors: Jovan Nelson, Teodor K. Stanev, Dmitry Lebedev, Trevor LaMountain, J. Tyler Gish, Hongfei Zeng, Hyeondeok Shin, Olle Heinonen, Kenji Watanabe, Takashi Taniguchi, Mark C. Hersam, Nathaniel P. Stern

Abstract: Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for opto-electronics due to its high electron mobility… ▽ More Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for opto-electronics due to its high electron mobility, tunable direct bandgap, and quantum transport. There are predictions of spin-dependent optical selection rules suggesting potential for all-optical excitation and control of spin in a two-dimensional layered material. Despite these predictions, layer-dependent optical spin phenomena in InSe have yet to be explored. Here, we present measurements of layer-dependent optical spin dynamics in few-layer and bulk InSe. Polarized photoluminescence reveals layer-dependent optical orientation of spin, thereby demonstrating the optical selection rules in few-layer InSe. Spin dynamics are also studied in many-layer InSe using time-resolved Kerr rotation spectroscopy. By applying out-of-plane and in-plane static magnetic fields for polarized emission measurements and Kerr measurements, respectively, the $g$-factor for InSe was extracted. Further investigations are done by calculating precession values using a $\textbf{k} \cdot \textbf{p}$ model, which is supported by \textit{ab-initio} density functional theory. Comparison of predicted precession rates with experimental measurements highlights the importance of excitonic effects in InSe for understanding spin dynamics. Optical orientation of spin is an important prerequisite for opto-spintronic phenomena and devices, and these first demonstrations of layer-dependent optical excitation of spins in InSe lay the foundation for combining layer-dependent spin properties with advantageous electronic properties found in this material. △ Less

Submitted 11 December, 2022; originally announced December 2022.

Comments: 11 pages, 6 figures, supplemental material

Journal ref: Physical Review B 107, 115304 (2023)

Characterization of Nb films for superconducting qubits using phase boundary measurements

Authors: Kevin M. Ryan, Carlos G. Torres-Castanedo, Dominic P. Goronzy, David A. Garcia Wetter, Matthew J Reagor, Mark Field, Cameron J Kopas, Jayss Marshall, Michael J. Bedzyk, Mark C. Hersam, Venkat Chandrasekhar

Abstract: Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought to be a major source of qubit decoherence at millikelvin temperatures. In addition to Al, Nb is a commonly used metalization layer for superconducting qubits.… ▽ More Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought to be a major source of qubit decoherence at millikelvin temperatures. In addition to Al, Nb is a commonly used metalization layer for superconducting qubits. Consequently, a significant effort is required to develop and qualify processes that mitigate defects in Nb films. As the fabrication of complete superconducting qubits and their characterization at millikelvin temperatures is a time and resource intensive process, it is desirable to have measurement tools that can rapidly characterize the properties of films and evaluate different treatments. Here we show that measurements of the variation of the superconducting critical temperature $T_c$ with an applied external magnetic field $H$ (of the phase boundary $T_c - H$) performed with very high resolution show features that are directly correlated with the structure of the Nb films. In combination with x-ray diffraction measurements, we show that one can even distinguish variations quality and crystal orientation of the grains in a Nb film by small but reproducible changes in the measured superconducting phase boundary. △ Less

Submitted 8 August, 2022; v1 submitted 26 July, 2022; originally announced July 2022.

Develo** a Chemical and Structural Understanding of the Surface Oxide in a Niobium Superconducting Qubit

Authors: Akshay A. Murthy, Paul Masih Das, Stephanie M. Ribet, Cameron Kopas, Jaeyel Lee, Matthew J. Reagor, Lin Zhou, Matthew J. Kramer, Mark C. Hersam, Mattia Checchin, Anna Grassellino, Roberto dos Reis, Vinayak P. Dravid, Alexander Romanenko

Abstract: Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from secondary ion mass spectrometry and electron microscopy to conduct a… ▽ More Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from secondary ion mass spectrometry and electron microscopy to conduct a detailed assessment of the surface oxide that forms in ambient conditions for transmon test qubit devices patterned from a niobium film. We observe that this oxide exhibits a varying stoichiometry with NbO and NbO$_2$ found closer to the niobium film and Nb$_2$O$_5$ found closer to the surface. In terms of structural analysis, we find that the Nb$_2$O$_5$ region is semicrystalline in nature and exhibits randomly oriented grains on the order of 1-2 nm corresponding to monoclinic N-Nb$_2$O$_5$ that are dispersed throughout an amorphous matrix. Using fluctuation electron microscopy, we are able to map the relative crystallinity in the Nb$_2$O$_5$ region with nanometer spatial resolution. Through this correlative method, we observe that amorphous regions are more likely to contain oxygen vacancies and exhibit weaker bonds between the niobium and oxygen atoms. Based on these findings, we expect that oxygen vacancies likely serve as a decoherence mechanism in quantum systems. △ Less

Submitted 28 July, 2022; v1 submitted 16 March, 2022; originally announced March 2022.

Comments: 13 pages, 4 figures

Towards quantification of the ratio of the single and double wall carbon nanotubes in their mixtures:An In situ Raman spectroelectrochemical study

Authors: Zuzana Kominkovaa, Vaclav Vales, Mark C. Hersam, Martin Kalbac

Abstract: Mixtures containing different weight ratios of single wall carbon nanotubes (SWCNT) and double wall carbon nanotubes (DWCNT) were prepared and studied by in-situ Raman spectroelectrochemistry. Two components of the G-prime mode in the Raman spectra, which can be resolved at high electrode potentials, were assigned to the signals from inner tubes of DWCNT and outer tubes of DWCNT together with SWCN… ▽ More Mixtures containing different weight ratios of single wall carbon nanotubes (SWCNT) and double wall carbon nanotubes (DWCNT) were prepared and studied by in-situ Raman spectroelectrochemistry. Two components of the G-prime mode in the Raman spectra, which can be resolved at high electrode potentials, were assigned to the signals from inner tubes of DWCNT and outer tubes of DWCNT together with SWCNT. The dependence of the ratios of these two components of the G-prime mode on the nominal amount of SWCNT and DWCNT in the samples was simulated so that the residual amount of SWCNT in the original DWCNT could be determined. Additionally, the individual contributions of all components of carbon nanotubes into the total area of the G-prime mode at high electrode potentials were estimated from the simulation. △ Less

Submitted 22 July, 2021; originally announced July 2021.

Journal ref: Carbon 2014, 78, 366-373

Ingrained -- An automated framework for fusing atomic-scale image simulations into experiments

Authors: Eric Schwenker, V. S. Chaitanya Kolluru, **glong Guo, Xiaobing Hu, Qiucheng Li, Mark C. Hersam, Vinayak P. Dravid, Robert F. Klie, Jeffrey R. Guest, Maria K. Y. Chan

Abstract: To fully leverage the power of image simulation to corroborate and explain patterns and structures in atomic resolution microscopy (e.g., electron and scanning probe), an initial correspondence between the simulation and experimental image must be established at the outset of further high accuracy simulations or calculations. Furthermore, if simulation is to be used in context of highly automated… ▽ More To fully leverage the power of image simulation to corroborate and explain patterns and structures in atomic resolution microscopy (e.g., electron and scanning probe), an initial correspondence between the simulation and experimental image must be established at the outset of further high accuracy simulations or calculations. Furthermore, if simulation is to be used in context of highly automated processes or high-throughput optimization, the process of finding this correspondence itself must be automated. In this work, we introduce ingrained, an open-source automation framework which solves for this correspondence and fuses atomic resolution image simulations into the experimental images to which they correspond. We describe herein the overall ingrained workflow, focusing on its application to interface structure approximations, and the development of an experimentally rationalized forward model for scanning tunneling microscopy simulation. △ Less

Submitted 21 May, 2021; originally announced May 2021.

Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements

Authors: Sevdenur Arpaci, Victor Lopez-Dominguez, Jiacheng Shi, Luis Sánchez-Tejerina, Francesca Garesci, Chulin Wang, Xueting Yan, Vinod K. Sangwan, Matthew Grayson, Mark C. Hersam, Giovanni Finocchio, Pedram Khalili Amiri

Abstract: There is accelerating interest in develo** memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bil… ▽ More There is accelerating interest in develo** memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn$_3$/Pt devices. A six-terminal double-cross device is constructed, with an IrMn$_3$ pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn$_3$ after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn$_3$ pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process. △ Less

Submitted 5 May, 2021; originally announced May 2021.

Nanoscale probing of image-potential states and electron transfer do** in borophene polymorphs

Authors: Xiaolong Liu, Luqing Wang, Boris I. Yakobson, Mark C. Hersam

Abstract: Using field-emission resonance spectroscopy with an ultrahigh vacuum scanning tunneling microscope, we reveal Stark-shifted image-potential states of the v_1/6 and v_1/5 borophene polymorphs on Ag(111) with long lifetimes, suggesting high borophene lattice and interface quality. These image-potential states allow the local work function and interfacial charge transfer of borophene to be probed at… ▽ More Using field-emission resonance spectroscopy with an ultrahigh vacuum scanning tunneling microscope, we reveal Stark-shifted image-potential states of the v_1/6 and v_1/5 borophene polymorphs on Ag(111) with long lifetimes, suggesting high borophene lattice and interface quality. These image-potential states allow the local work function and interfacial charge transfer of borophene to be probed at the nanoscale and test the widely employed self-do** model of borophene. Supported by apparent barrier height measurements and density functional theory calculations, electron transfer do** occurs for both borophene phases from the Ag(111) substrate. In contradiction with the self-do** model, a higher electron transfer do** level occurs for denser v_1/6 borophene compared to v_1/5 borophene, thus revealing the importance of substrate effects on borophene electron transfer. △ Less

Submitted 18 November, 2020; originally announced November 2020.

Journal ref: Nano Letters 2021, 21, 1169-1174

Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

Authors: Chengmei Zhong, Vinod K. Sangwan, Joohoon Kang, Jan Luxa, Zdeněk Sofer, Mark C. Hersam, Emily A. Weiss

Abstract: Layered indium selenide (InSe) is a van der Waals solid that has emerged as a promising material for high-performance ultrathin solar cells. The optoelectronic parameters that are critical to photoconversion efficiencies, such as hot carrier lifetime and surface recombination velocity, are however largely unexplored in InSe. Here, these key photophysical properties of layered InSe are measured wit… ▽ More Layered indium selenide (InSe) is a van der Waals solid that has emerged as a promising material for high-performance ultrathin solar cells. The optoelectronic parameters that are critical to photoconversion efficiencies, such as hot carrier lifetime and surface recombination velocity, are however largely unexplored in InSe. Here, these key photophysical properties of layered InSe are measured with femtosecond transient reflection spectroscopy. The hot carrier cooling process is found to occur through phonon scattering. The surface recombination velocity and ambipolar diffusion coefficient are extracted from fits to the pump energy-dependent transient reflection kinetics using a free carrier diffusion model. The extracted surface recombination velocity is approximately an order of magnitude larger than that for methylammonium lead-iodide perovskites, suggesting that surface recombination is a principal source of photocarrier loss in InSe. The extracted ambipolar diffusion coefficient is consistent with previously reported values of InSe carrier mobility. △ Less

Submitted 21 March, 2019; originally announced March 2019.

Low Frequency Carrier Kinetics in Perovskite Solar Cells

Authors: Vinod K. Sangwan, Menghua Zhu, Sarah Clark, Kyle A. Luck, Tobin J. Marks, Mercouri G. Kanatzidis, Mark C. Hersam

Abstract: Hybrid organic-inorganic halide perovskite solar cells have emerged as leading candidates for third-generation photovoltaic technology. Despite the rapid improvement in power conversion efficiency (PCE) for perovskite solar cells in recent years, the low-frequency carrier kinetics that underlie practical roadblocks such as hysteresis and degradation remain relatively poorly understood. In an effor… ▽ More Hybrid organic-inorganic halide perovskite solar cells have emerged as leading candidates for third-generation photovoltaic technology. Despite the rapid improvement in power conversion efficiency (PCE) for perovskite solar cells in recent years, the low-frequency carrier kinetics that underlie practical roadblocks such as hysteresis and degradation remain relatively poorly understood. In an effort to bridge this knowledge gap, we perform here correlated low-frequency noise (LFN) and impedance spectroscopy (IS) characterization that elucidates carrier kinetics in operating perovskite solar cells. Specifically, we focus on planar cell geometries with a SnO2 electron transport layer and two different hole transport layers, namely, poly(triarylamine) (PTAA) and Spiro-OMeTAD. PTAA and Sprio-OMeTAD cells with moderate PCEs of 5 to 12 percent possess a Lorentzian feature at 200 Hz in LFN measurements that corresponds to a crossover from electrode to dielectric polarization. In comparison, Spiro-OMeTAD cells with high PCEs (15 percent) show four orders of magnitude lower LFN amplitude and are accompanied by a cyclostationary process. Through a systematic study of more than a dozen solar cells, we establish a correlation with noise amplitude, power conversion efficiency, and fill factor. Overall, this work establishes correlated LFN and IS as an effective methodology for quantifying low frequency carrier kinetics in perovskite solar cells, thereby providing new physical insights that can rationally guide ongoing efforts to improve device performance, reproducibility, and stability. △ Less

Submitted 21 March, 2019; originally announced March 2019.

Self-Assembled Photochromic Molecular Dipoles for High Performance Polymer Thin-Film Transistors

Authors: Satyaprasad P. Senanayak, Vinod K. Sangwan, Julian J. McMorrow, Ken Everaerts, Zhihua Chen, Antonio Facchetti, Mark C. Hersam, Tobin J. Marks, K. S. Narayan

Abstract: The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azo-benzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized i… ▽ More The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azo-benzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized in polymer thin-film transistors (TFTs) to realize high performance electronics with p-type field-effect mobility exceeding 2 cm^2/(V.s). A crossover in the transport mechanism from electrostatic dipolar disorder to ionic-induced disorder is observed in the transistor characteristics over a range of temperatures. The facile supramolecular design allows the possibility to optically control the extent of molecular and ionic polarization in the ultra-thin nanodielectric. Thus, we demonstrate a three-fold increase in the capacitance from 0.1 uF/cm^2 to 0.34 uF/cm^2, which results in a 200% increase in TFT channel current. △ Less

Submitted 6 June, 2018; originally announced June 2018.

Mechanisms of Ultrafast Charge Separation in a PTB7/Monolayer MoS2 van der Waals Heterojunction

Authors: Chengmei Zhong, Vinod K. Sangwan, Chen Wang, Hadallia Bergeron, Mark C. Hersam, Emily A. Weiss

Abstract: Mixed-dimensional van der Waals heterojunctions comprising polymer and twodimensional (2D) semiconductors have many characteristics of an ideal charge separation interface for optoelectronic and photonic applications. However, the photoelectron dynamics at polymer- 2D semiconductor heterojunction interfaces are currently not sufficiently understood to guide the optimization of devices for these ap… ▽ More Mixed-dimensional van der Waals heterojunctions comprising polymer and twodimensional (2D) semiconductors have many characteristics of an ideal charge separation interface for optoelectronic and photonic applications. However, the photoelectron dynamics at polymer- 2D semiconductor heterojunction interfaces are currently not sufficiently understood to guide the optimization of devices for these applications. This manuscript is a report of a systematic exploration of the time-dependent photophysical processes that occur upon photoexcitation of a type-II heterojunction between the polymer PTB7 and monolayer MoS2. In particular, photoinduced electron transfer from PTB7 to electronically hot states of MoS2 occurs in less than 250 fs. This process is followed by a slower (1-5 ps) exciton diffusion-limited electron transfer from PTB7 to MoS2 with a yield of 58%, and a sub-3-ps photoinduced hole transfer from MoS2 to PTB7. The equilibrium between excitons and polaron pairs in PTB7 determines the charge separation yield, whereas the 3-4 ns lifetime of photogenerated carriers is limited by MoS2 defects. Overall, this work elucidates the mechanisms of ultrafast charge carrier dynamics at PTB7-MoS2 interfaces, which will inform ongoing efforts to exploit polymer-2D semiconductor heterojunctions for photovoltaic and photodetector applications. △ Less

Submitted 24 May, 2018; originally announced May 2018.

Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions

Authors: Alex Henning, Vinod K. Sangwan, Hadallia Bergeron, Itamar Balla, Zhiyuan Sun, Mark C. Hersam, Lincoln J. Lauhon

Abstract: Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Towards that end, we investigated the photoresponse of Si nanowire/MoS2 heterojunc… ▽ More Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Towards that end, we investigated the photoresponse of Si nanowire/MoS2 heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS2 isotype heterojunctions with p-Si/MoS2 heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection. We measure an instrument limited response time of 1 us, which is 10 times faster than previously reported response times for planar Si/MoS2 devices, highlighting the advantages of the 1-D/2-D heterojunction. Finite element simulations of device models provide a detailed understanding of how the electrostatics affect charge transport in nanowire/vdW heterojunctions and inform the design of future vdW heterojunction photodetectors and transistors. △ Less

Submitted 24 May, 2018; originally announced May 2018.

Comments: 30 pages, 4 figures

Gate-tunable memristors from monolayer MoS2

Authors: Vinod K. Sangwan, Hong-Sub Lee, Mark C. Hersam

Abstract: We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes of 3-5 um. The device characteristics show switching ratios up to 500, with the resistance in individual states being continuously gate-tunable by over three ord… ▽ More We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes of 3-5 um. The device characteristics show switching ratios up to 500, with the resistance in individual states being continuously gate-tunable by over three orders of magnitude. The resistive switching results from dynamically varying threshold voltage and Schottky barrier heights, whose underlying physical mechanism appears to be vacancy migration and/or charge trap**. Top-gated devices achieve reversible tuning of the threshold voltage, with potential utility in non-volatile memory or neuromorphic architectures. △ Less

Submitted 21 February, 2018; originally announced February 2018.

Multi-Terminal Memtransistors from Polycrystalline Monolayer MoS2

Authors: Vinod K. Sangwan, Hong-Sub Lee, Hadallia Bergeron, Itamar Balla, Megan E. Beck, Kan-Sheng Chen, Mark C. Hersam

Abstract: In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory, memristors have higher endurance, multi-bit data storage, and faster read/write times. However, although 2-terminal memristors have demonstrated basic neural functions… ▽ More In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory, memristors have higher endurance, multi-bit data storage, and faster read/write times. However, although 2-terminal memristors have demonstrated basic neural functions, synapses in the human brain outnumber neurons by more than a factor of 1000, which implies that multiterminal memristors are needed to perform complex functions such as heterosynaptic plasticity. Previous attempts to move beyond 2-terminal memristors include the 3-terminal Widrow-Hoff memistor and field-effect transistors with nanoionic gates or floating gates, albeit without memristive switching in the transistor. Here, we report the scalable experimental realization of a multi-terminal hybrid memristor and transistor (i.e., memtransistor) using polycrystalline monolayer MoS2. Two-dimensional (2D) MoS2 memtransistors show gate tunability in individual states by 4 orders of magnitude in addition to large switching ratios with high cycling endurance and long-term retention of states. In addition to conventional neural learning behavior of long-term potentiation/depression, 6-terminal MoS2 memtransistors possess gate-tunable heterosynaptic functionality that is not achievable using 2-terminal memristors. For example, the conductance between a pair of two floating electrodes (pre-synaptic and post-synaptic neurons) is varied by 10X by applying voltage pulses to modulatory terminals. In situ scanning probe microscopy, cryogenic charge transport measurements, and device modeling reveal that bias-induced MoS2 defect motion drives resistive switching by dynamically varying Schottky barrier heights. △ Less

Submitted 21 February, 2018; originally announced February 2018.

Comments: 22 pages, 4 figures

Journal ref: Nature 2018

Graphene-enabled, directed nanomaterial placement from solution for large-scale device integration

Authors: Michael Engel, Damon B. Farmer, Jaione Tirapu Azpiroz, Jung-Woo T. Seo, Joohoon Kang, Phaedon Avouris, Mark C. Hersam, Ralph Krupke, Mathias Steiner

Abstract: Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on surface functionalization have a drawback where undesired chemical modifications can occur and deteriorate the deposited material. The application of electric-… ▽ More Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on surface functionalization have a drawback where undesired chemical modifications can occur and deteriorate the deposited material. The application of electric-field assisted placement techniques eliminates the element of chemical treatment; however, it requires an incorporation of conductive placement electrodes that limit the performance, scaling, and density of integrated electronic devices. Here, we report a method for electric-field assisted placement of solution-processed nanomaterials by using large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, then are removed without residue once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas larger than 1mm2. In order to demonstrate the broad applicability, we have assembled representative zero-, one-, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. This graphene-based placement technique affords nanoscale resolution at wafer scale, and could enable mass manufacturing of nanoelectronics and optoelectronics involving a wide range of nanomaterials prepared via solution-based approaches. △ Less

Submitted 21 February, 2018; originally announced February 2018.

Comments: 17 pages, 5 figures

Electronic Transport in Two-Dimensional Materials

Authors: Vinod K. Sangwan, Mark C. Hersam

Abstract: Two-dimensional (2D) materials have captured the attention of the scientific community due to the wide range of unique properties at nanometer-scale thicknesses. While significant exploratory research in 2D materials has been achieved, the understanding of 2D electronic transport and carrier dynamics remains in a nascent stage. Furthermore, since prior review articles have provided general overvie… ▽ More Two-dimensional (2D) materials have captured the attention of the scientific community due to the wide range of unique properties at nanometer-scale thicknesses. While significant exploratory research in 2D materials has been achieved, the understanding of 2D electronic transport and carrier dynamics remains in a nascent stage. Furthermore, since prior review articles have provided general overviews of 2D materials or specifically focused on charge transport in graphene, here we instead highlight charge transport mechanisms in post-graphene 2D materials with particular emphasis on transition metal dichalcogenides and black phosphorus. For these systems, we delineate the intricacies of electronic transport including bandstructure control with thickness and external fields, valley polarization, scattering mechanisms, electrical contacts, and do**. In addition, electronic interactions between 2D materials are considered in the form of van der Waals heterojunctions and composite films. This review concludes with a perspective on the most promising future directions in this fast-evolving field. △ Less

Submitted 3 February, 2018; originally announced February 2018.

Comments: 48 pages, 8 figures, Annual Reviews of Physical Chemistry

Self-Aligned van der Waals Heterojunction Diodes and Transistors

Authors: Vinod K. Sangwan, Megan E. Beck, Alex Henning, Jiajia Luo, Hadallia Bergeron, Junmo Kang, Itamar Balla, Hadass Inbar, Lincoln J. Lauhon, Mark C. Hersam

Abstract: A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojun… ▽ More A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of anti-ambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated anti-ambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with sub-diffraction channel lengths in the range of 150 nm to 800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step towards the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems. △ Less

Submitted 3 February, 2018; originally announced February 2018.

Valley-selective optical Stark effect probed by Kerr rotation

Authors: Trevor LaMountain, Hadallia Bergeron, Itamar Balla, Teodor K. Stanev, Mark C. Hersam, Nathaniel P. Stern

Abstract: The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS$_2$ and WSe$_2$ using ultrafast optical pulses. Despite these advances, under… ▽ More The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS$_2$ and WSe$_2$ using ultrafast optical pulses. Despite these advances, understanding of valley-sensitive optical Stark shifts in TMDCs has been limited by reflectance-based detection methods where the signal is small and prone to background effects. More sensitive polarization-based spectroscopy is required to better probe ultrafast Stark shifts for all-optical manipulation of valley energy levels. Here, we show time-resolved Kerr rotation to be a more sensitive probe of the valley-selective optical Stark effect in monolayer TMDCs. Compared to the established time-resolved reflectance methods, Kerr rotation is less sensitive to background effects. Kerr rotation provides a five-fold improvement in the signal-to-noise ratio of the Stark effect optical signal and a more precise estimate of the energy shift. This increased sensitivity allows for observation of an optical Stark shift in monolayer MoS$_2$ that exhibits both valley- and energy-selectivity, demonstrating the promise of this method for investigating this effect in other layered materials and heterostructures. △ Less

Submitted 26 October, 2017; originally announced October 2017.

Comments: 9 pages, 4 figures, supplementary information

Journal ref: Phys. Rev. B 97, 045307 (2018)

Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors

Authors: Kyle A. Luck, Vinod K. Sangwan, Patrick E. Hartnett, Heather N. Arnold, Michael R. Wasielewski, Tobin J. Marks, Mark C. Hersam

Abstract: Non-fullerene acceptors based on perylenediimides (PDIs) have garnered significant interest as an alternative to fullerene acceptors in organic photovoltaics (OPVs), but their charge transport phenomena are not well understood, especially in bulk heterojunctions (BHJs). Here, we investigate charge transport and current fluctuations by performing correlated low-frequency noise and impedance spectro… ▽ More Non-fullerene acceptors based on perylenediimides (PDIs) have garnered significant interest as an alternative to fullerene acceptors in organic photovoltaics (OPVs), but their charge transport phenomena are not well understood, especially in bulk heterojunctions (BHJs). Here, we investigate charge transport and current fluctuations by performing correlated low-frequency noise and impedance spectroscopy measurements on two BHJ OPV systems, one employing a fullerene acceptor and the other employing a dimeric PDI acceptor. In the dark, these measurements reveal that PDI-based OPVs have a greater degree of recombination in comparison to fullerene-based OPVs. Furthermore, for the first time in organic solar cells, 1/f noise data are fit to the Kleinpenning model to reveal underlying current fluctuations in different transport regimes. Under illumination, 1/f noise increases by approximately four orders of magnitude for the fullerene-based OPVs and three orders of magnitude for the PDI-based OPVs. An inverse correlation is also observed between noise spectral density and power conversion efficiency. Overall, these results show that low-frequency noise spectroscopy is an effective in-situ diagnostic tool to assess charge transport in emerging photovoltaic materials, thereby providing quantitative guidance for the design of next-generation solar cell materials and technologies. △ Less

Submitted 20 September, 2017; originally announced September 2017.

Comments: 37 pages, 7 figures

Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene MoS2 van der Waals Heterojunction

Authors: Stephanie Bettis Homan, Vinod K. Sangwan, Itamar Balla, Hadallia Bergeron, Emily A. Weiss, Mark C. Hersam

Abstract: Van der Waals heterojunctions between two-dimensional (2D) layered materials and nanomaterials of different dimensions present unique opportunities for gate-tunable optoelectronic devices. Mixed dimensional p-n heterojunction diodes, such as p-type pentacene (0D) and n-type monolayer MoS2 (2D), are especially interesting for photovoltaic applications where the absorption cross-section and charge t… ▽ More Van der Waals heterojunctions between two-dimensional (2D) layered materials and nanomaterials of different dimensions present unique opportunities for gate-tunable optoelectronic devices. Mixed dimensional p-n heterojunction diodes, such as p-type pentacene (0D) and n-type monolayer MoS2 (2D), are especially interesting for photovoltaic applications where the absorption cross-section and charge transfer processes can be tailored by rational selection from the vast library of organic molecules and 2D materials. Here, we study the kinetics of excited carriers in pentacene-MoS2 p-n type-II heterojunctions by transient absorption spectroscopy. These measurements show that the dissociation of MoS2 excitons occurs by hole transfer to pentacene on the time scale of 6.7 ps. In addition, the charge-separated state lives for 5.1 ns, up to an order of magnitude longer than the recombination lifetimes from previously reported 2D material heterojunctions. By studying the fractional amplitudes of the MoS2 decay processes, the hole transfer yield from MoS2 to pentacene is found to be approximately 50 percent, with the remaining holes undergoing trap** due to surface defects. Overall, the ultrafast charge transfer and long-lived charge-separated state in pentacene-MoS2 p-n heterojunctions suggest significant promise for mixed-dimensional van der Waals heterostructures in photovoltaics, photodetectors, and related optoelectronic technologies. △ Less

Submitted 7 March, 2017; originally announced March 2017.

Journal ref: Nano Letters 17, 164 (2017)

Control of interlayer delocalization in 2H transition metal dichalcogenides

Authors: Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia, James Charles, Alex Henning, Vinod K. Sangwan, Aritra Lahiri, Daniel Mejia, Prasad Sarangapani, Michael Povolotskyi, Aryan Afzalian, Jesse Maassen, Gerhard Klimeck, Mark C. Hersam, Lincoln J. Lauhon, Nathaniel P. Stern, Tillmann Kubis

Abstract: It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- ac… ▽ More It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hop**. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence. △ Less

Submitted 15 September, 2017; v1 submitted 6 March, 2017; originally announced March 2017.

Comments: 11 pages, 15 figures

Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions

Authors: Tejas A. Shastry, Itamar Balla, Hadallia Bergeron, Samuel H. Amsterdam, Tobin J. Marks, Mark C. Hersam

Abstract: Two-dimensional transition metal dichalcogenides (TMDCs) have recently attracted attention due to their superlative optical and electronic properties. In particular, their extraordinary optical absorption and semiconducting band gap have enabled demonstrations of photovoltaic response from heterostructures composed of TMDCs and other organic or inorganic materials. However, these early studies wer… ▽ More Two-dimensional transition metal dichalcogenides (TMDCs) have recently attracted attention due to their superlative optical and electronic properties. In particular, their extraordinary optical absorption and semiconducting band gap have enabled demonstrations of photovoltaic response from heterostructures composed of TMDCs and other organic or inorganic materials. However, these early studies were limited to devices at the micrometer scale and/or failed to exploit the unique optical absorption properties of single-layer TMDCs. Here we present an experimental realization of a large-area type-II photovoltaic heterojunction using single-layer molybdenum disulfide (MoS2) as the primary absorber, by coupling it to the organic π-donor polymer PTB7. This TMDC-polymer heterojunction exhibits photoluminescence intensity that is tunable as a function of the thickness of the polymer layer, ultimately enabling complete quenching of the TMDC photoluminescence. The strong optical absorption in the TMDC-polymer heterojunction produces an internal quantum efficiency exceeding 40% for an overall cell thickness of less than 20 nm, resulting in exceptional current density per absorbing thickness in comparison to other organic and inorganic solar cells. Furthermore, this work provides new insight into the recombination processes in type-II TMDC-polymer heterojunctions and thus provides quantitative guidance to ongoing efforts to realize efficient TMDC-based solar cells. △ Less

Submitted 30 November, 2016; originally announced December 2016.

Comments: 24 pages, 6 figures

Journal ref: ACS Nano, 2016, 10 (11), pp 10573-10579

Mixed-Dimensional van der Waals Heterostructures

Authors: Deep Jariwala, Tobin J. Marks, Mark C. Hersam

Abstract: The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling bond-free surface will interact with another via vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere p… ▽ More The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling bond-free surface will interact with another via vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through noncovalent interactions. In this review, we present a succinct and critical survey of emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices. By comparing and contrasting with all-2D vdW heterostructures as well as with competing conventional technologies, the challenges and opportunities for mixed-dimensional vdW heterostructures are highlighted. △ Less

Submitted 1 August, 2016; originally announced August 2016.

Comments: 8 figures

Covalent Functionalization and Passivation of Exfoliated Black Phosphorus via Aryl Diazonium Chemistry

Authors: Christopher R. Ryder, Joshua D. Wood, Spencer A. Wells, Yang Yang, Deep Jariwala, Tobin J. Marks, George C. Schatz, Mark C. Hersam

Abstract: Functionalization of atomically thin nanomaterials enables the tailoring of their chemical, optical, and electronic properties. Exfoliated black phosphorus, a layered two-dimensional semiconductor exhibiting favorable charge carrier mobility, tunable bandgap, and highly anisotropic properties, is chemically reactive and degrades rapidly in ambient conditions. In contrast, here we show that covalen… ▽ More Functionalization of atomically thin nanomaterials enables the tailoring of their chemical, optical, and electronic properties. Exfoliated black phosphorus, a layered two-dimensional semiconductor exhibiting favorable charge carrier mobility, tunable bandgap, and highly anisotropic properties, is chemically reactive and degrades rapidly in ambient conditions. In contrast, here we show that covalent aryl diazonium functionalization suppresses the chemical degradation of exfoliated black phosphorus even following weeks of ambient exposure. This chemical modification scheme spontaneously forms phosphorus-carbon bonds, has a reaction rate sensitive to the aryl diazonium substituent, and alters the electronic properties of exfoliated black phosphorus, ultimately yielding a strong, tunable p-type do** that simultaneously improves field-effect transistor mobility and on/off current ratio. This chemical functionalization pathway controllably modifies the properties of exfoliated black phosphorus, thus improving its prospects for nanoelectronic applications. △ Less

Submitted 3 May, 2016; originally announced May 2016.

Comments: In print; 27 pages with supporting information in Nature Chemistry 2016

Stable Aqueous Dispersions of Optically and Electronically Active Phosphorene

Authors: Joohoon Kang, Spencer A. Wells, Joshua D. Wood, Jae-Hyeok Lee, Xiaolong Liu, Christopher R. Ryder, Jian Zhu, Jeffrey R. Guest, Chad A. Husko, Mark C. Hersam

Abstract: Understanding and exploiting the remarkable optical and electronic properties of phosphorene require mass production methods that avoid chemical degradation. While solution-based strategies have been developed for scalable exfoliation of black phosphorus, these techniques have thus far employed anhydrous organic solvents in an effort to minimize exposure to known oxidants, but at the cost of limit… ▽ More Understanding and exploiting the remarkable optical and electronic properties of phosphorene require mass production methods that avoid chemical degradation. While solution-based strategies have been developed for scalable exfoliation of black phosphorus, these techniques have thus far employed anhydrous organic solvents in an effort to minimize exposure to known oxidants, but at the cost of limited exfoliation yield and flake size distribution. Here, we present an alternative phosphorene production method based on surfactant-assisted exfoliation and post-processing of black phosphorus in deoxygenated water. From comprehensive microscopic and spectroscopic analysis, this approach is shown to yield phosphorene dispersions that are stable, highly concentrated, and comparable to micromechanically exfoliated phosphorene in structure and chemistry. Due to the high exfoliation efficiency of this process, the resulting phosphorene flakes are thinner than anhydrous organic solvent dispersions, thus allowing the observation of layer-dependent photoluminescence down to the monolayer limit. Furthermore, to demonstrate preservation of electronic properties following solution processing, the aqueous-exfoliated phosphorene flakes are employed in field-effect transistors with high drive currents and current modulation ratios. Overall, this method enables the isolation and mass production of few-layer phosphorene, which will accelerate ongoing efforts to realize a diverse range of phosphorene-based applications. △ Less

Submitted 19 April, 2016; originally announced April 2016.

Comments: 4 figures, 37 pages, including supporting information in Proceedings of the National Academy of Sciences

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Authors: Xiaolong Liu, Itamar Balla, Hadallia Bergeron, Mark C. Hersam

Abstract: With reduced degrees of freedom, structural defects are expected to play a greater role in two-dimensional materials in comparison to their bulk counterparts. In particular, mechanical strength, electronic properties, and chemical reactivity are strongly affected by crystal imperfections in the atomically thin limit. Here, ultra-high vacuum (UHV) scanning tunneling microscopy (STM) and spectroscop… ▽ More With reduced degrees of freedom, structural defects are expected to play a greater role in two-dimensional materials in comparison to their bulk counterparts. In particular, mechanical strength, electronic properties, and chemical reactivity are strongly affected by crystal imperfections in the atomically thin limit. Here, ultra-high vacuum (UHV) scanning tunneling microscopy (STM) and spectroscopy (STS) are employed to interrogate point and line defects in monolayer MoS2 grown on epitaxial graphene (EG) at the atomic scale. Five types of point defects are observed with the majority species showing apparent structures that are consistent with vacancy and interstitial models. The total defect density is observed to be lower than MoS2 grown on other substrates, and is likely attributed to the van der Waals epitaxy of MoS2 on EG. Grain boundaries (GBs) with 30° and 60° tilt angles resulting from the rotational commensurability of MoS2 on EG are more easily resolved by STM than atomic force microscopy at similar scales due to the enhanced contrast from their distinct electronic states. For example, band gap reduction to ~0.8 eV and ~0.5 eV is observed with STS for 30° and 60° GBs, respectively. In addition, atomic resolution STM images of these GBs are found to agree well with proposed structure models. This work offers quantitative insight into the structure and properties of common defects in MoS2, and suggests pathways for tailoring the performance of MoS2/graphene heterostructures via defect engineering. △ Less

Submitted 3 April, 2016; originally announced April 2016.

Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

Authors: Xiaolong Liu, Itamar Balla, Hadallia Bergeron, Gavin P. Campbell, Michael J. Bedzyk, Mark C. Hersam

Abstract: Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensura… ▽ More Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thickness-controlled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomic-resolution scanning tunneling microscopy (STM). The electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced bandgap of ~0.4 eV at the monolayer MoS2 edges. △ Less

Submitted 3 April, 2016; originally announced April 2016.

Journal ref: ACS Nano 2016, 10, 1067-1075

Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus

Authors: Christopher R. Ryder, Joshua D. Wood, Spencer A. Wells, Mark C. Hersam

Abstract: Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and… ▽ More Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and extrinsic adsorbates. Furthermore, the integration of 2D semiconductors into electronic and optoelectronic devices introduces unique challenges at metal-semiconductor and dielectric-semiconductor interfaces. Here, we review emerging efforts to understand and exploit chemical effects to influence the properties of 2D TMDCs and BP. In some cases, surface chemistry leads to significant degradation, thus necessitating the development of robust passivation schemes. On the other hand, appropriately designed chemical modification can be used to beneficially tailor electronic properties, such as controlling do** levels and charge carrier concentrations. Overall, chemical methods allow substantial tunability of the properties of 2D TMDCs and BP, thereby enabling significant future opportunities to optimize performance for device applications. △ Less

Submitted 28 March, 2016; originally announced March 2016.

Comments: Review article in press; 43 pages and 8 figures in ACS Nano (2016)

Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors

Authors: Junmo Kang, Deep Jariwala, Christopher R. Ryder, Spencer A. Wells, Yongsuk Choi, Euyheon Hwang, Jeong Ho Cho, Tobin J. Marks, Mark C. Hersam

Abstract: Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as MoS2. To date, BP field-effect transistors have utilized a lateral geometry with in-plane transport dominating device characteristics. In contrast, we present here… ▽ More Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as MoS2. To date, BP field-effect transistors have utilized a lateral geometry with in-plane transport dominating device characteristics. In contrast, we present here a vertical field-effect transistor geometry based on a graphene/BP van der Waals heterostructure. The resulting device characteristics include high on-state current densities (> 1600 A/cm2) and current on/off ratios exceeding 800 at low temperature. Two distinct charge transport mechanisms are identified, which are dominant for different regimes of temperature and gate voltage. In particular, the Schottky barrier between graphene and BP determines charge transport at high temperatures and positive gate voltages, whereas tunneling dominates at low temperatures and negative gate voltages. These results elucidate out-of-plane electronic transport in BP, and thus have implications for the design and operation of BP-based van der Waals heterostructures. △ Less

Submitted 13 March, 2016; originally announced March 2016.

Comments: 4 figures and supporting information, Published in Nano Letters (2016)

Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2

Authors: Deep Jariwala, Sarah L. Howell, Kan-Sheng Chen, Junmo Kang, Vinod K. Sangwan, Stephen A. Filippone, Riccardo Turrisi, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semi-metallic graphene and insulating boron nitride, has enabled the fabrication of all 2D van der Waals heterostructure devices. Furthermore, the concept of va… ▽ More The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semi-metallic graphene and insulating boron nitride, has enabled the fabrication of all 2D van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integration with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS2. The resulting p-n heterojunction is gate-tunable and shows asymmetric control over the anti-ambipolar transfer characteristic. In addition, the pentacene-MoS2 heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS2 can function as an acceptor in hybrid solar cells. △ Less

Submitted 10 December, 2015; originally announced December 2015.

Comments: 5 figures and supporting information. To appear in Nano Letters

Anisotropic Thermal Conductivity of Exfoliated Black Phosphorus

Authors: Hye** Jang, Joshua D. Wood, Christopher R. Ryder, Mark C. Hersam, David G. Cahill

Abstract: We ascertain the anisotropic thermal conductivity of alumina passivated black phosphorus (BP), a reactive 2D nanomaterial with strong in-plane anisotropy. We measure the room temperature thermal conductivity by time-domain thermoreflectance for the three crystalline axes of exfoliated BP. The thermal conductivity along the zigzag direction (86 +/- 8 W/(m*K)) is ~2.5 times higher than that of the a… ▽ More We ascertain the anisotropic thermal conductivity of alumina passivated black phosphorus (BP), a reactive 2D nanomaterial with strong in-plane anisotropy. We measure the room temperature thermal conductivity by time-domain thermoreflectance for the three crystalline axes of exfoliated BP. The thermal conductivity along the zigzag direction (86 +/- 8 W/(m*K)) is ~2.5 times higher than that of the armchair direction (34 +/- 4 W/(m*K)). △ Less

Submitted 30 September, 2015; originally announced October 2015.

Comments: 6 figures, extensive supporting information, in Advanced Materials (2015)

Solvent Exfoliation of Electronic-Grade, Two-Dimensional Black Phosphorus

Authors: Joohoon Kang, Joshua D. Wood, Spencer A. Wells, Jae-Hyeok Lee, Xiaolong Liu, Kan-Sheng Chen, Mark C. Hersam

Abstract: Solution dispersions of two-dimensional (2D) black phosphorus (BP), often referred to as phosphorene, are achieved by solvent exfoliation. These pristine, electronic-grade BP dispersions are produced with anhydrous, organic solvents in a sealed tip ultrasonication system, which circumvents BP degradation that would otherwise occur via solvated oxygen or water. Among conventional solvents, n-methyl… ▽ More Solution dispersions of two-dimensional (2D) black phosphorus (BP), often referred to as phosphorene, are achieved by solvent exfoliation. These pristine, electronic-grade BP dispersions are produced with anhydrous, organic solvents in a sealed tip ultrasonication system, which circumvents BP degradation that would otherwise occur via solvated oxygen or water. Among conventional solvents, n-methyl-pyrrolidone (NMP) is found to provide stable, highly concentrated (~0.4 mg/mL) BP dispersions. Atomic force microscopy, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy show that the structure and chemistry of solvent-exfoliated BP nanosheets are comparable to mechanically exfoliated BP flakes. Additionally, residual NMP from the liquid-phase processing suppresses the rate of BP oxidation in ambient conditions. Solvent-exfoliated BP nanosheet field-effect transistors (FETs) exhibit ambipolar behavior with current on/off ratios and mobilities up to ~10000 and ~50 cm^2/(V*s), respectively. Overall, this study shows that stable, highly concentrated, electronic-grade 2D BP dispersions can be realized by scalable solvent exfoliation, thereby presenting opportunities for large-area, high-performance BP device applications. △ Less

Submitted 5 May, 2015; originally announced May 2015.

Comments: 6 figures, 31 pages, including supporting information

Journal ref: ACS Nano, 9, (4), 3596 (2015)

Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

Authors: V. K. Sangwan, D. Jariwala, I. S. Kim, K. -S. Chen, T. J. Marks, L. J. Lauhon, M. C. Hersam

Abstract: Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device with internal resistance that depends on the history of the external bias voltage. State of the art memristors, based on metal insulator metal (MIM) structures wi… ▽ More Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device with internal resistance that depends on the history of the external bias voltage. State of the art memristors, based on metal insulator metal (MIM) structures with insulating oxides, such as TiO2, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS2 devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to 1000 and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS2 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices. △ Less

Submitted 6 April, 2015; originally announced April 2015.

Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy

Authors: Sarah L. Howell, Deep Jariwala, Chung-Chiang Wu, Kan-Sheng Chen, Vinod K. Sangwan, Junmo Kang, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current versus voltage measurements, scanning photocurrent microscopy, and finite element simulations of charge carrier transport. Rectifying I-V curves are consistent… ▽ More The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current versus voltage measurements, scanning photocurrent microscopy, and finite element simulations of charge carrier transport. Rectifying I-V curves are consistently observed between contacts on opposite sides of 1L-ML junctions, and a strong bias-dependent photocurrent is observed at the junction. Finite element device simulations with varying carrier concentrations and electron affinities show that a type II band alignment at single layer/multi-layer junctions reproduces both the rectifying electrical characteristics and the photocurrent response under bias. However, the zero-bias junction photocurrent and its energy dependence are not explained by conventional photovoltaic and photothermoelectric mechanisms, indicating the contributions of hot carriers. △ Less

Submitted 30 March, 2015; originally announced March 2015.

Comments: 5 figures plus supplement

In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus

Authors: Xiaolong Liu, Joshua D. Wood, Kan-Sheng Chen, EunKyung Cho, Mark C. Hersam

Abstract: With a semiconducting band gap and high charge carrier mobility, two-dimensional (2D) black phosphorus (BP), often referred to as phosphorene, holds significant promise for next generation electronics and optoelectronics. However, as a 2D material, it possesses a higher surface area to volume ratio than bulk BP, suggesting that its chemical and thermal stability will be modified. Herein, an atomic… ▽ More With a semiconducting band gap and high charge carrier mobility, two-dimensional (2D) black phosphorus (BP), often referred to as phosphorene, holds significant promise for next generation electronics and optoelectronics. However, as a 2D material, it possesses a higher surface area to volume ratio than bulk BP, suggesting that its chemical and thermal stability will be modified. Herein, an atomic-scale microscopic and spectroscopic study is performed to characterize the thermal degradation of mechanically exfoliated 2D BP. From in situ scanning/transmission electron microscopy, decomposition of 2D BP is observed to occur at ~400 °C in vacuum, in contrast to the 550 °C bulk BP sublimation temperature. This decomposition initiates via eye-shaped cracks along the [001] direction and then continues until only a thin, amorphous red phosphorous like skeleton remains. In situ electron energy loss spectroscopy, energy-dispersive X-ray spectroscopy, and energy-loss near-edge structure changes provide quantitative insight into this chemical transformation process. △ Less

Submitted 9 February, 2015; originally announced February 2015.

Comments: In press: 4 figures in main manuscript, 27 pages with supporting information

Journal ref: Journal of Physical Chemistry Letters 2015

Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors

Authors: Deep Jariwala, Vinod K. Sangwan, Jung-Woo Ted Seo, Weichao Xu, Jeremy Smith, Chris H. Kim, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials prese… ▽ More The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit anti-ambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies. △ Less

Submitted 13 December, 2014; originally announced December 2014.

Comments: Manuscript (5 figures)+ supporting information, Nano Letters (2014)

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Authors: Joshua D. Wood, Spencer A. Wells, Deep Jariwala, Kan-Sheng Chen, EunKyung Cho, Vinod K. Sangwan, Xiaolong Liu, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 sa… ▽ More Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 saturated H2O irreversibly reacts with BP to form oxidized phosphorus species. This interpretation is further supported by the observation that BP degradation occurs more rapidly on hydrophobic octadecyltrichlorosilane self-assembled monolayers and on H-Si(111), versus hydrophilic SiO2. For unencapsulated BP field-effect transistors, the ambient degradation causes large increases in threshold voltage after 6 hours in ambient, followed by a ~10^3 decrease in FET current on/off ratio and mobility after 48 hours. Atomic layer deposited AlOx overlayers effectively suppress ambient degradation, allowing encapsulated BP FETs to maintain high on/off ratios of ~10^3 and mobilities of ~100 cm2/(V*s) for over two weeks in ambient. This work shows that the ambient degradation of BP can be managed effectively when the flakes are sufficiently passivated. In turn, our strategy for enhancing BP environmental stability will accelerate efforts to implement BP in electronic and optoelectronic applications. △ Less

Submitted 7 November, 2014; originally announced November 2014.

Comments: Accepted at Nano Letters; 18 pages, 5 figures, and 23 figure supporting information

Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS$_{2}$

Authors: In Soo Kim, Vinod K. Sangwan, Deep Jariwala, Joshua D. Wood, Spencer Park, Kan-Sheng Chen, Fengyuan Shi, Francisco Ruiz-Zepeda, Arturo Ponce, Miguel Jose-Yacaman, Vinayak P. Dravid, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. Since then, the optoelectronic properties of CVD grown monol… ▽ More Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. Since then, the optoelectronic properties of CVD grown monolayer MoS$_{2}$ have been heavily investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS$_{2}$ during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoO$_{x}$ species. As MoS$_{2-δ}$ is reduced (increasing δ), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes non-uniform. Devices fabricated from monolayers with the lowest sulfur content have negligible hysteresis and a threshold voltage of ~0 V. We conclude that the electrical and optical properties of monolayer MoS$_{2}$ crystals can be tuned via stoichiometry engineering to meet the requirements of various applications. △ Less

Submitted 17 September, 2014; originally announced September 2014.

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

Authors: Vinod K. Sangwan, Deep Jariwala, Ken Everaerts, Julian J. McMorrow, Jianting He, Matthew Grayson, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain > 1.0 in vacuum (pressure < 2 x 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate… ▽ More Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain > 1.0 in vacuum (pressure < 2 x 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 inch wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics. △ Less

Submitted 7 February, 2014; originally announced February 2014.

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

Authors: Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Towards that end, several classes of hi… ▽ More With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Towards that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development. △ Less

Submitted 31 January, 2014; originally announced February 2014.

Comments: Review article, 10 figures. ACS Nano, 2014, Article ASAP

Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

Authors: Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in… ▽ More In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field. △ Less

Submitted 31 January, 2014; originally announced February 2014.

Comments: Review article, 15 figures

Journal ref: Chem. Soc. Rev., 2013, 42, 2824

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

Authors: Deep Jariwala, Vinod K. Sangwan, Chung-Chiang Wu, Pradyumna L. Prabhumirashi, Michael L. Geier, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high performance field-effect devices have been achieved from monolayered materials and their heterost… ▽ More The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here, we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (s-SWCNTs) and single-layer molybdenum disulfide (SL-MoS2) as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10^4. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency (EQE) of 25% and fast photoresponse < 15 μs. Since SWCNTs have a diverse range of electrical properties as a function of chirality, and since an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. △ Less

Submitted 22 October, 2013; originally announced October 2013.

Comments: 4 figures. Combined with supporting information Proceedings of the National Academy of Sciences of U.S.A. (2013)

Low Frequency Electronic Noise in Single-Layer MoS2 Transistors

Authors: Vinod K. Sangwan, Heather N. Arnold, Deep Jariwala, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.0… ▽ More Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (< 10-5 Torr). The field-effect mobility decreased and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 K to 6.5 K. △ Less

Submitted 15 August, 2013; originally announced August 2013.

Comments: Nano Letters (2013)

Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy

Authors: Chung-Chiang Wu, Deep Jariwala, Vinod K. Sangwan, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of few layer MoS2 transistors qualitatively fo… ▽ More The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of few layer MoS2 transistors qualitatively follow the optical absorption spectra of MoS2, providing direct evidence of interband photoexcitation. Time and spectrally resolved photocurrent measurements at varying external electric fields and carrier concentrations establish that drift-diffusion currents dominate photothermoelectric currents in devices under bias. △ Less

Submitted 18 July, 2013; originally announced July 2013.

Comments: 4 figure letter + supporting information. Journal of Physical Chemistry Letters (2013)