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Local structure maturation in high entropy oxide (Mg,Co,Ni,Cu,Zn)1-x(Cr,Mn)xO thin films
Authors:
Gabriela E. Niculescu,
Gerald R. Bejger,
John P. Barber,
Joshua T. Wright,
Saeed S. I. Almishal,
Matthew Webb,
Sai Venkata Gayathri Ayyagari,
Jon-Paul Maria,
Nasim Alem,
John T. Heron,
Christina M. Rost
Abstract:
High entropy oxides (HEO)s have garnered much interest due to their available high degree of tunability. Here, we study the local structure of (MgNiCuCoZn)0.167(MnCr)0.083O, a composition based on the parent HEO (MgNiCuCoZn)0.2O.We synthesized a series of thin films via pulsed laser deposition at incremental oxygen partial pressures. X-ray diffraction shows lattice parameter to decrease with incre…
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High entropy oxides (HEO)s have garnered much interest due to their available high degree of tunability. Here, we study the local structure of (MgNiCuCoZn)0.167(MnCr)0.083O, a composition based on the parent HEO (MgNiCuCoZn)0.2O.We synthesized a series of thin films via pulsed laser deposition at incremental oxygen partial pressures. X-ray diffraction shows lattice parameter to decrease with increased pO2 pressures until the onset of phase separation. X-ray absorption fine structure shows that specific atomic species in the composition dictate the global structure of the material as Cr, Co, and Mn shift to energetically favorable coordination with increasing pressure. Transmission electron microscopy analysis on a lower-pressure sample exhibits a rock salt structure, but the higher-pressure sample reveals reflections reminiscent of the spinel structure. In all, these findings give a more complete picture on how (MgNiCuCoZn)0.167(MnCr)0.083O forms with varying initial conditions and advances fundamental knowledge of cation behavior in high entropy oxides.
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Submitted 19 June, 2024;
originally announced June 2024.
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Untangling individual cation roles in rock salt high-entropy oxides
Authors:
Saeed S. I. Almishal,
Jacob T. Sivak,
George N. Kotsonis,
Yueze Tan,
Matthew Furst,
Dhiya Srikanth,
Vincent H. Crespi,
Venkatraman Gopalan,
John T. Heron,
Long-Qing Chen,
Christina M. Rost,
Susan B. Sinnott,
Jon-Paul Maria
Abstract:
We unravel the distinct roles each cation plays in phase evolution, stability, and properties within Mg1/5Co1/5Ni1/5Cu1/5Zn1/5O high-entropy oxide (HEO) by integrating experimental findings, thermodynamic analyses, and first-principles predictions. Our approach is through sequentially removing one cation at a time from the five-component high-entropy oxide to create five four-component derivatives…
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We unravel the distinct roles each cation plays in phase evolution, stability, and properties within Mg1/5Co1/5Ni1/5Cu1/5Zn1/5O high-entropy oxide (HEO) by integrating experimental findings, thermodynamic analyses, and first-principles predictions. Our approach is through sequentially removing one cation at a time from the five-component high-entropy oxide to create five four-component derivatives. Bulk synthesis experiments indicate that Mg, Ni, and Co act as rock salt phase stabilizers whereas only Mg and Ni enthalpically enhance single-phase rock salt stability in thin film growth; synthesis conditions dictate whether Co is a rock salt phase stabilizer or destabilizer. By examining the competing phases and oxidation state preferences using pseudo-binary phase diagrams and first-principles calculations, we resolve the stability differences between bulk and thin film for all compositions. We systematically explore HEO macroscopic property sensitivity to cation selection employing both predicted and measured optical spectra. This study establishes a framework for understanding high-entropy oxide synthesizability and properties on a per-cation basis that is broadly applicable to tailoring functional property design in other high-entropy materials.
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Submitted 13 May, 2024;
originally announced May 2024.
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Endotaxial Stabilization of 2D Charge Density Waves with Long-range Order
Authors:
Suk Hyun Sung,
Nishkarsh Agarwal,
Ismail El Baggari,
Yin Min Goh,
Patrick Kezer,
Noah Schnitzer,
Yu Liu,
Wenjian Lu,
Yu** Sun,
Lena F. Kourkoutis,
John T. Heron,
Kai Sun,
Robert Hovden
Abstract:
Charge density waves are emergent quantum states that spontaneously reduce crystal symmetry, drive metal-insulator transitions, and precede superconductivity. In low-dimensions, distinct quantum states arise, however, thermal fluctuations and external disorder destroy long-range order. Here we stabilize ordered two-dimensional (2D) charge density waves through endotaxial synthesis of confined mono…
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Charge density waves are emergent quantum states that spontaneously reduce crystal symmetry, drive metal-insulator transitions, and precede superconductivity. In low-dimensions, distinct quantum states arise, however, thermal fluctuations and external disorder destroy long-range order. Here we stabilize ordered two-dimensional (2D) charge density waves through endotaxial synthesis of confined monolayers of 1T-TaS$_2$. Specifically, an ordered incommensurate charge density wave (oIC-CDW) is realized in 2D with dramatically enhanced amplitude and resistivity. By enhancing CDW order, the hexatic nature of charge density waves becomes observable. Upon heating via in-situ TEM, the CDW continuously melts in a reversible hexatic process wherein topological defects form in the charge density wave. From these results, new regimes of the CDW phase diagram for 1T-TaS$_2$ are derived and consistent with the predicted emergence of vestigial quantum order.
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Submitted 10 July, 2023;
originally announced July 2023.
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Antiferromagnetic metal phase in an electron-doped rare-earth nickelate
Authors:
Qi Song,
Spencer Doyle,
Grace A. Pan,
Ismail El Baggari,
Dan Ferenc Segedin,
Denisse Cordova Carrizales,
Johanna Nordlander,
Christian Tzschaschel,
James R. Ehrets,
Zubia Hasan,
Hesham El-Sherif,
Jyoti Krishna,
Chase Hanson,
Harrison LaBollita,
Aaron Bostwick,
Chris Jozwiak,
Eli Rotenberg,
Su-Yang Xu,
Alessandra Lanzara,
Alpha T. N'Diaye,
Colin A. Heikes,
Yaohua Liu,
Hanjong Paik,
Charles M. Brooks,
Betul Pamuk
, et al. (6 additional authors not shown)
Abstract:
Long viewed as passive elements, antiferromagnetic materials have emerged as promising candidates for spintronic devices due to their insensitivity to external fields and potential for high-speed switching. Recent work exploiting spin and orbital effects has identified ways to electrically control and probe the spins in metallic antiferromagnets, especially in noncollinear or noncentrosymmetric sp…
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Long viewed as passive elements, antiferromagnetic materials have emerged as promising candidates for spintronic devices due to their insensitivity to external fields and potential for high-speed switching. Recent work exploiting spin and orbital effects has identified ways to electrically control and probe the spins in metallic antiferromagnets, especially in noncollinear or noncentrosymmetric spin structures. The rare earth nickelate NdNiO3 is known to be a noncollinear antiferromagnet where the onset of antiferromagnetic ordering is concomitant with a transition to an insulating state. Here, we find that for low electron do**, the magnetic order on the nickel site is preserved while electronically a new metallic phase is induced. We show that this metallic phase has a Fermi surface that is mostly gapped by an electronic reconstruction driven by the bond disproportionation. Furthermore, we demonstrate the ability to write to and read from the spin structure via a large zero-field planar Hall effect. Our results expand the already rich phase diagram of the rare-earth nickelates and may enable spintronics applications in this family of correlated oxides.
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Submitted 14 November, 2022;
originally announced November 2022.
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Superconductivity in a quintuple-layer square-planar nickelate
Authors:
Grace A. Pan,
Dan Ferenc Segedin,
Harrison LaBollita,
Qi Song,
Emilian M. Nica,
Berit H. Goodge,
Andrew T. Pierce,
Spencer Doyle,
Steve Novakov,
Denisse Córdova Carrizales,
Alpha T. N'Diaye,
Padraic Shafer,
Hanjong Paik,
John T. Heron,
Jarad A. Mason,
Amir Yacoby,
Lena F. Kourkoutis,
Onur Erten,
Charles M. Brooks,
Antia S. Botana,
Julia A. Mundy
Abstract:
Since the discovery of high-temperature superconductivity in the copper oxide materials, there have been sustained efforts to both understand the origins of this phase and discover new cuprate-like superconducting materials. One prime materials platform has been the rare-earth nickelates and indeed superconductivity was recently discovered in the doped compound Nd$_{0.8}$Sr$_{0.2}$NiO$_2$. Undoped…
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Since the discovery of high-temperature superconductivity in the copper oxide materials, there have been sustained efforts to both understand the origins of this phase and discover new cuprate-like superconducting materials. One prime materials platform has been the rare-earth nickelates and indeed superconductivity was recently discovered in the doped compound Nd$_{0.8}$Sr$_{0.2}$NiO$_2$. Undoped NdNiO$_2$ belongs to a series of layered square-planar nickelates with chemical formula Nd$_{n+1}$Ni$_n$O$_{2n+2}$ and is known as the 'infinite-layer' ($n = \infty$) nickelate. Here, we report the synthesis of the quintuple-layer ($n = 5$) member of this series, Nd$_6$Ni$_5$O$_{12}$, in which optimal cuprate-like electron filling ($d^{8.8}$) is achieved without chemical do**. We observe a superconducting transition beginning at $\sim$13 K. Electronic structure calculations, in tandem with magnetoresistive and spectroscopic measurements, suggest that Nd$_6$Ni$_5$O$_{12}$ interpolates between cuprate-like and infinite-layer nickelate-like behavior. In engineering a distinct superconducting nickelate, we identify the square-planar nickelates as a new family of superconductors which can be tuned via both do** and dimensionality.
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Submitted 20 September, 2021;
originally announced September 2021.
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Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO$_2$
Authors:
S. Chae,
K. A. Mengle,
K. Bushick,
J. Lee,
N. Sanders,
Z. Deng,
Z. Mi,
P. F. P. Poudeu,
H. Paik,
J. T. Heron,
E. Kioupakis
Abstract:
Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials limitations with regards to their do** asymmetry that impedes their adoption in CMO…
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Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials limitations with regards to their do** asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar do** of UWBG materials will enable a wider range of applications in power electronics as well as deep- UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved do** and transport properties. As an example, we discuss the case of rutile GeO$_2$ (r-GeO$_2$), a water-insoluble GeO$_2$ polytype which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than \b{eta}-Ga$_2$O$_3$. The subsequent realization of single-crystalline r-GeO$_2$ thin films by molecular beam epitaxy provides the opportunity to realize r-GeO$_2$ for electronic applications. Future efforts towards the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled do** in high-quality thin films with lower dislocation densities and optimized film properties.
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Submitted 1 July, 2021; v1 submitted 14 May, 2021;
originally announced May 2021.
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Two-dimensional charge order stabilized in clean polytype heterostructures
Authors:
Suk Hyun Sung,
Noah Schnitzer,
Steve Novakov,
Ismail El Baggari,
Xiangpeng Luo,
Jiseok Gim,
Nguyen M. Vu,
Zidong Li,
Todd B. Brintlinger,
Yu Liu,
Wenjian Lu,
Yu** Sun,
Parag Deotare,
Kai Sun,
Liuyan Zhao,
Lena F. Kourkoutis,
John T. Heron,
Robert Hovden
Abstract:
Compelling evidence suggests distinct correlated electron behavior may exist only in clean 2D materials such as 1T-TaS2. Unfortunately, experiment and theory suggest that extrinsic disorder in free standing 2D layers disrupts correlation-driven quantum behavior. Here we demonstrate a route to realizing fragile 2D quantum states through endotaxial polytype engineering of van der Waals materials. Th…
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Compelling evidence suggests distinct correlated electron behavior may exist only in clean 2D materials such as 1T-TaS2. Unfortunately, experiment and theory suggest that extrinsic disorder in free standing 2D layers disrupts correlation-driven quantum behavior. Here we demonstrate a route to realizing fragile 2D quantum states through endotaxial polytype engineering of van der Waals materials. The true isolation of 2D charge density waves (CDWs) between metallic layers stabilizes commensurate long-range order and lifts the coupling between neighboring CDW layers to restore mirror symmetries via interlayer CDW twinning. The twinned-commensurate charge density wave (tC-CDW) reported herein has a single metal--insulator phase transition at ~350 K as measured structurally and electronically. Fast in-situ transmission electron microscopy and scanned nanobeam diffraction map the formation of tC-CDWs. This work introduces endotaxial polytype engineering of van der Waals materials to access latent 2D ground states distinct from conventional 2D fabrication.
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Submitted 20 January, 2022; v1 submitted 17 February, 2021;
originally announced February 2021.
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A Narrowband Spintronic Terahertz Emitter based on Magnetoelastic Heterostructures
Authors:
Shihao Zhuang,
Peter B. Meisenheimer,
John T. Heron,
Jia-Mian Hu
Abstract:
Narrowband terahertz (THz) radiation is crucial for high-resolution spectral identification, but a narrowband THz source driven by femtosecond (fs) laser has remained scarce. Here, it is computationally predicted that a metal/dielectric/magnetoelastic heterostructure enables converting a fs laser pulse into a multi-cycle THz pulse with a narrow linewidth down to ~1.5 GHz, which is in contrast with…
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Narrowband terahertz (THz) radiation is crucial for high-resolution spectral identification, but a narrowband THz source driven by femtosecond (fs) laser has remained scarce. Here, it is computationally predicted that a metal/dielectric/magnetoelastic heterostructure enables converting a fs laser pulse into a multi-cycle THz pulse with a narrow linewidth down to ~1.5 GHz, which is in contrast with the single-cycle, broadband THz pulse from the existing fs-laser-excited emitters. It is shown that such narrowband THz pulse originates from the excitation and long-distance transport of THz spin waves in the magnetoelastic film, which can be enabled by a short strain pulse obtained from fs laser irradiation of the metal film when the thicknesses of the metal and magnetoelastic films both fall into a specific range. These results therefore reveal an approach to achieving optical generation of narrowband THz pulse based on heterostructure design, which also has implications in the design of THz magnonic devices.
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Submitted 1 October, 2021; v1 submitted 1 May, 2020;
originally announced May 2020.
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Imaging uncompensated moments and exchange-biased emergent ferromagnetism in FeRh thin films
Authors:
Isaiah Gray,
Gregory M. Stiehl,
John T. Heron,
Antonio B. Mei,
Darrell G. Schlom,
Ramamoorthy Ramesh,
Daniel C. Ralph,
Gregory D. Fuchs
Abstract:
Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the ferromagnetic layer. We use magneto-thermal microscopy to image uncompensated moments in thin films of FeRh, a room-temperature antiferromagnet that exhibits a 1…
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Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the ferromagnetic layer. We use magneto-thermal microscopy to image uncompensated moments in thin films of FeRh, a room-temperature antiferromagnet that exhibits a 1st-order phase transition to a ferromagnetic state near 100~$^\circ$C. FeRh provides the unique opportunity to study both uncompensated moments in the antiferromagnetic phase and the interaction of uncompensated moments with emergent ferromagnetism within a relatively broad (10-15~$^\circ$C) temperature range near $T_C$. In the AF phase below $T_C$, we image both pinned UMs, which cause local vertical exchange bias, and unpinned UMs, which exhibit an enhanced coercive field that reflects exchange-coupling to the AF bulk. Near $T_C$, where AF and FM order coexist, we find that the emergent FM order is exchange-coupled to the bulk Néel order. This exchange coupling leads to the nucleation of unusual configurations in which different FM domains are pinned parallel, antiparallel, and perpendicular to the applied magnetic field before suddenly collapsing into a state uniformly parallel to the field.
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Submitted 17 June, 2019;
originally announced June 2019.
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Rutile GeO2: an ultrawide-band-gap semiconductor with ambipolar do**
Authors:
Sieun Chae,
Jihang Lee,
Kelsey A. Mengle,
John T. Heron,
Emmanouil Kioupakis
Abstract:
Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap. Ambipolar do**, however, has been a major challenge for UWBG materials as dopant ionization energy and charge compensation generally increase with increasing band gap and significantly limit the semiconductor devices that can currentl…
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Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap. Ambipolar do**, however, has been a major challenge for UWBG materials as dopant ionization energy and charge compensation generally increase with increasing band gap and significantly limit the semiconductor devices that can currently be realized. Using hybrid density functional theory, we demonstrate rutile germanium oxide (r-GeO2) to be an alternative UWBG (4.68 eV) material that can be ambipolarly doped. We identify SbGe, AsGe, and FO as possible donors with low ionization energies and propose growth conditions to avoid charge compensation by deep acceptors such as VGe and NO. On the other hand, acceptors such as AlGe have relatively large ionization energies (0.45 eV) due to the formation of localized hole polarons and are likely to be passivated by VO, Gei, and self-interstitials. Yet, we find that the co-incorporation of AlGe with interstitial H can increase the solubility limit of Al and enable hole conduction in the impurity band. Our results show that r-GeO2 is a promising UWBG semiconductor that can overcome current do** challenges and enable the next generation of power electronics devices.
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Submitted 14 March, 2019;
originally announced March 2019.
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Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures
Authors:
Isaiah Gray,
Takahiro Moriyama,
Nikhil Sivadas,
Gregory M. Stiehl,
John T. Heron,
Ryan Need,
Brian J. Kirby,
David H. Low,
Katja C. Nowack,
Darrell G. Schlom,
Daniel C. Ralph,
Teruo Ono,
Gregory D. Fuchs
Abstract:
As electrical control of Néel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the Néel order. We demonstrate spin S…
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As electrical control of Néel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the Néel order. We demonstrate spin Seebeck microscopy as a sensitive, table-top method for imaging antiferromagnetic order in thin films, and apply this technique to study spin-torque switching in NiO/Pt and Pt/NiO/Pt heterostructures. We establish the interfacial antiferromagnetic spin Seebeck effect in NiO as a probe of surface Néel order, resolving antiferromagnetic spin domains within crystalline twin domains. By imaging before and after applying current-induced spin torque, we resolve spin domain rotation and domain wall motion, acting simultaneously. We correlate the changes in spin Seebeck images with electrical measurements of the average Néel orientation through the spin Hall magnetoresistance, confirming that we image antiferromagnetic order.
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Submitted 1 March, 2019; v1 submitted 9 October, 2018;
originally announced October 2018.
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Point defects and dopants of boron arsenide from first-principles calculations: donor compensation and do** asymmetry
Authors:
Sieun Chae,
Kelsey Mengle,
John T. Heron,
Emmanouil Kioupakis
Abstract:
We apply hybrid density functional theory calculations to identify the formation energies and thermodynamic charge transition levels of native point defects, common impurities, and shallow dopants in BAs. We find that boron-related defects such as V_B, B_As, B_i-V_B complexes, and antisite pairs are the dominant intrinsic defects. Native BAs is expected to exhibit p-type conduction due to the acce…
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We apply hybrid density functional theory calculations to identify the formation energies and thermodynamic charge transition levels of native point defects, common impurities, and shallow dopants in BAs. We find that boron-related defects such as V_B, B_As, B_i-V_B complexes, and antisite pairs are the dominant intrinsic defects. Native BAs is expected to exhibit p-type conduction due to the acceptor-type characteristics of V_B and B_As. Among the common impurities we explored, we found that C substitutional defects and H interstitials have relatively low formation energies and are likely to contribute free holes. Interstitial hydrogen is surprisingly also found to be stable in the neutral charge state. Be_B, Si_As and Ge_As are predicted to be excellent shallow acceptors with low ionization energy (< 0.03 eV) and negligible compensation by other point defects considered here. On the other hand, donors such as Se_As, Te_As, Si_B, and Ge_B have a relatively large ionization energy (~0.15 eV) and are likely to be passivated by native defects such as B_As and V_B, as well as C_As, H_i, and H_B. The hole and electron do** asymmetry originates from the heavy effective mass of the conduction band due to its boron orbital character, as well as from boron-related intrinsic defects that compensate donors.
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Submitted 24 September, 2018;
originally announced September 2018.
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Unexpected Termination Switching and Polarity Compensation in LaAlO3/SrTiO3 heterostructures
Authors:
Guneeta Singh-Bhalla,
Pim B. Rossen,
Gunnar K. Palsson,
Jaganatha S. Suresha,
Di Yi,
Abhigyan Dasgupta,
David Doenning,
Victor G. Ruiz,
Ajay K. Yadav,
Morgan Trassin,
John T. Heron,
Charles S. Fadley,
Rossitza Pentcheva,
Jayakanth Ravichandran,
Ramamoorthy Ramesh
Abstract:
Polar crystals composed of charged ionic planes cannot exist in nature without acquiring surface changes to balance an ever-growing dipole. The necessary changes can manifest structurally or electronically. An electronic asymetry has long been observed in the LaAlO3/SrTiO3 system. Electron accumulation is observed near the LaAlO3/TiO2-SrTiO3 interface, while the LaAlO3/SrO-SrTiO3 stack is insulati…
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Polar crystals composed of charged ionic planes cannot exist in nature without acquiring surface changes to balance an ever-growing dipole. The necessary changes can manifest structurally or electronically. An electronic asymetry has long been observed in the LaAlO3/SrTiO3 system. Electron accumulation is observed near the LaAlO3/TiO2-SrTiO3 interface, while the LaAlO3/SrO-SrTiO3 stack is insulating. Here, we observe evidence for an asymmetry in the surface chemical termination for nominally stoichiometric LaAlO3 films in contact with the two different surface layers of SrTiO3 crystals, TiO2 and SrO. Using several element specific probes, we find that the surface termination of LaAlO3 remains AlO2 irrespective of the starting termination of SrTiO3 substrate surface. We use a combination of cross-plane tunneling measurements and first principles calcula- tions to understand the effects of this unexpected termination on band alignments and polarity compensation of LaAlO3/SrTiO3 heterostructures. An asymmetry in LaAlO3 polarity compensation and resulting electronic properties will fundamentally limit atomic level control of oxide heterostructures.
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Submitted 18 January, 2018;
originally announced January 2018.
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Clocked Magnetostriction-Assisted Spintronic Device Design and Simulation
Authors:
Rouhollah Mousavi Iraei,
Nickvash Kani,
Sourav Dutta,
Dmitri E. Nikonov,
Sasikanth Manipatruni,
Ian A. Young,
John T. Heron,
Azad Naeemi
Abstract:
We propose a heterostructure device comprised of magnets and piezoelectrics that significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device, illustrates its operation, and benchmarks its performance using SPICE simulations. We show that the proposed device maintains low voltage operation, non-reciprocity, n…
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We propose a heterostructure device comprised of magnets and piezoelectrics that significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device, illustrates its operation, and benchmarks its performance using SPICE simulations. We show that the proposed device maintains low voltage operation, non-reciprocity, non-volatility, cascadability, and thermal reliability of the original ASL device. Moreover, by utilizing the deterministic switching of a magnet from the saddle point of the energy profile, the device is more efficient in terms of energy and delay and is robust to thermal fluctuations. The results of simulations show that compared to ASL devices, the proposed device achieves 21x shorter delay and 27x lower energy dissipation per bit for a 32-bit arithmetic-logic unit (ALU).
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Submitted 22 November, 2017;
originally announced November 2017.
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Spin-Hall Torques Generated by Rare-Earth (Lanthanide) Thin Films
Authors:
Neal Reynolds,
Priyamvada Jadaun,
John T. Heron,
Colin L. Jermain,
Jonathan Gibbons,
Robyn Collette,
R. A. Buhrman,
D. G. Schlom,
D. C. Ralph
Abstract:
We report an initial experimental survey of spin-Hall torques generated by the rare-earth metals Gd, Dy, Ho, and Lu, along with comparisons to first-principles calculations of their spin Hall conductivities. Using spin torque ferromagnetic resonance (ST-FMR) measurements and DC-biased ST-FMR, we estimate lower bounds for the spin-Hall torque ratio, $ξ_{SH}$, of $\approx$ 0.04 for Gd, $\approx$ 0.0…
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We report an initial experimental survey of spin-Hall torques generated by the rare-earth metals Gd, Dy, Ho, and Lu, along with comparisons to first-principles calculations of their spin Hall conductivities. Using spin torque ferromagnetic resonance (ST-FMR) measurements and DC-biased ST-FMR, we estimate lower bounds for the spin-Hall torque ratio, $ξ_{SH}$, of $\approx$ 0.04 for Gd, $\approx$ 0.05 for Dy, $\approx$ 0.14 for Ho, and $\approx$ 0.014 for Lu. The variations among these elements are qualitatively consistent with results from first principles (density functional theory, DFT, in the local density approximation with a Hubbard-U correction). The DFT calculations indicate that the spin Hall conductivity is enhanced by the presence of the partially-filled $f$ orbitals in Dy and Ho, which suggests a strategy to further strengthen the contribution of the $f$ orbitals to the spin Hall effect by shifting the electron chemical potential.
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Submitted 6 December, 2016;
originally announced December 2016.
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An invisible non-volatile solid-state memory
Authors:
J. Clarkson,
C. Frontera,
Z. Q. Liu,
Y. Lee,
J. Kim,
K. Cordero,
S. Wizotsky,
F. Sanchez,
J. Sort,
S. L. Hsu,
C Ko,
J. Wu,
H. M. Christen,
J. T. Heron,
D. G. Schlom,
S. Salahuddin,
L. Aballe,
M. Foerster,
N. Kioussis,
J. Fontcuberta,
I. Fina,
R. Ramesh,
X. Marti
Abstract:
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable res…
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Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory.
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Submitted 7 September, 2016; v1 submitted 12 April, 2016;
originally announced April 2016.
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High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy
Authors:
Mark W. Tate,
Prafull Purohit,
Darol Chamberlain,
Kayla X. Nguyen,
Robert M. Hovden,
Celesta S. Chang,
Pratiti Deb,
Emrah Turgut,
John T. Heron,
Darrell G. Schlom,
Daniel C. Ralph,
Gregory D. Fuchs,
Katherine S. Shanks,
Hugh T. Philipp,
David A. Muller,
Sol M. Gruner
Abstract:
We describe a hybrid pixel array detector (EMPAD - electron microscope pixel array detector) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128 x 128 pixel detector consists of a 500 um thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit (ASIC). The in-pixel ci…
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We describe a hybrid pixel array detector (EMPAD - electron microscope pixel array detector) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128 x 128 pixel detector consists of a 500 um thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit (ASIC). The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition (DAQ) system, and preliminary results from experiments with 80 to 200 keV electron beams.
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Submitted 11 November, 2015;
originally announced November 2015.
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Interfacial Coupling in Multiferroic-Ferromagnet Heterostructures
Authors:
M. Trassin,
J. D. Clarkson,
S. R. Bowden,
Jian Liu,
J. T. Heron,
R. J. Paull,
E. Arenholz,
D. T. Pierce,
J. Unguris
Abstract:
We report local probe investigations of the magnetic interaction between BiFeO3 films and a ferromagnetic Co0.9Fe0.1 layer. Within the constraints of intralayer exchange coupling in the Co0.9Fe0.1, the multiferroic imprint in the ferromagnet results in a collinear arrangement of the local magnetization and the in-plane BiFeO3 ferroelectric polarization. The magnetic anisotropy is uniaxial, and an…
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We report local probe investigations of the magnetic interaction between BiFeO3 films and a ferromagnetic Co0.9Fe0.1 layer. Within the constraints of intralayer exchange coupling in the Co0.9Fe0.1, the multiferroic imprint in the ferromagnet results in a collinear arrangement of the local magnetization and the in-plane BiFeO3 ferroelectric polarization. The magnetic anisotropy is uniaxial, and an in-plane effective coupling field of order 10 mT is derived. Measurements as a function of multiferroic layer thickness show that the influence of the multiferroic layer on the magnetic layer becomes negligible for 3 nm thick BiFeO3 films. We ascribe this breakdown in the exchange coupling to a weakening of the antiferromagnetic order in the ultrathin BiFeO3 film based on our X-ray linear dichroism measurements. These observations are consistent with an interfacial exchange coupling between the CoFe moments and a canted antiferromagnetic moment in the BiFeO3.
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Submitted 19 April, 2013;
originally announced April 2013.
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Epitaxy-distorted spin-orbit Mott insulator in Sr2IrO4 thin films
Authors:
C. Rayan Serrao,
Jian Liu,
J. T. Heron,
G. Singh-Bhalla,
A. Yadav,
S. J. Suresha,
R. J. Paull,
D. Yi,
J. -H. Chu,
M. Trassin,
A. Vishwanath,
E. Arenholz,
C. Frontera,
J. Železný,
T. Jungwirth,
X. Marti,
R. Ramesh
Abstract:
High quality epitaxial thin films of Jeff=1/2 Mott insulator Sr2IrO4 with increasing in-plane tensile strain have been grown on top of SrTiO3(001) substrates. Increasing the in-plane tensile strain up to ~0.3% was observed to drop the c/a tetragonality by 1.2 %. X-ray absorption spectroscopy detected a strong reduction of the linear dichroism upon increasing in-plane tensile strain towards a reduc…
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High quality epitaxial thin films of Jeff=1/2 Mott insulator Sr2IrO4 with increasing in-plane tensile strain have been grown on top of SrTiO3(001) substrates. Increasing the in-plane tensile strain up to ~0.3% was observed to drop the c/a tetragonality by 1.2 %. X-ray absorption spectroscopy detected a strong reduction of the linear dichroism upon increasing in-plane tensile strain towards a reduced anisotropy in the local electronic structure. While the most relaxed thin film shows a consistent dependence with previously reported single crystal bulk measurements, electrical transport reveals a charge gap reduction from 200 meV down to 50 meV for the thinnest and most epitaxy-distorted film. We argue that the reduced tetragonality plays a major role in the change of the electronic structure, which is reflected in the change of the transport properties. Our work opens the possibility for exploiting epitaxial strain as a tool for both structural and functional manipulation of spin-orbit Mott systems.
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Submitted 24 January, 2013; v1 submitted 29 September, 2012;
originally announced October 2012.
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Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs
Authors:
S. Mack,
R. C. Myers,
J. T. Heron,
A. C. Gossard,
D. D. Awschalom
Abstract:
Heavily-alloyed, 100 nm Ga1-xMnxAs (x>0.1) films are obtained via low temperature molecular beam epitaxy utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible, optimized electronic, magnetic and structural properties are found in a narrow range of stoichiometric growth conditions. The Curie temperature of stoichiometric material is 150-…
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Heavily-alloyed, 100 nm Ga1-xMnxAs (x>0.1) films are obtained via low temperature molecular beam epitaxy utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible, optimized electronic, magnetic and structural properties are found in a narrow range of stoichiometric growth conditions. The Curie temperature of stoichiometric material is 150-165 K and independent of x within a large window of growth conditions while substitutional Mn content increases linearly, contradicting the prediction of the Zener Model of hole-mediated ferromagnetism.
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Submitted 21 March, 2008;
originally announced March 2008.