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Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet
Authors:
** Kwan Johnny Wong,
Wen Zhang,
Fabio Bussolotti,
Xinmao Yin,
Tun Seng Herng,
Lei Zhang,
Yu Li Huang,
Giovanni Vinai,
Sridevi Krishnamurthi,
Danil W Bukhvalov,
Yu Jie Zheng,
Rebekah Chua,
Alpha T N Diaye,
Simon A. Morton,
Chao-Yao Yang,
Kui-Hon Ou Yang,
Piero Torelli,
Wei Chen,
Kuan Eng Johnson Goh,
Jun Ding,
Minn-Tsong Lin,
Geert Brocks,
Michel P de Jong,
Antonio H Castro Neto,
Andrew Thye Shen Wee
Abstract:
Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption,…
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Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.
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Submitted 6 June, 2022;
originally announced June 2022.
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Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces
Authors:
S. W. Zeng,
X. M. Yin,
T. S. Herng,
K. Han,
Z. Huang,
L. C. Zhang,
C. J. Li,
W. X. Zhou,
D. Y. Wan,
P. Yang,
J. Ding,
A. T. S. Wee,
J. M. D. Coey,
T. Venkatesan,
A. Rusydi,
A. Ariando
Abstract:
Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and La…
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Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces.
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Submitted 9 November, 2018;
originally announced November 2018.
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Multiple-Modes Scanning Probe Microscopy Characterization of Copper doped Zinc Oxide (ZnO:Cu) Thin Films
Authors:
Juanxiu Xiao,
Tun Seng Herng,
Jun Ding,
Kaiyang Zeng
Abstract:
This paper presents multiple-modes Scanning Probe Microscopy (SPM) studies on characterize resistance switching (RS), polarization rotation (PO) and surface potential changes in copper doped ZnO (ZnO:Cu) thin films. The bipolar RS behavior is confirmed by conductive Atomic Force Microscopy (c-AFM). The PO with almost 180° phase angle is confirmed by using the vertical and lateral Piezoresponse For…
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This paper presents multiple-modes Scanning Probe Microscopy (SPM) studies on characterize resistance switching (RS), polarization rotation (PO) and surface potential changes in copper doped ZnO (ZnO:Cu) thin films. The bipolar RS behavior is confirmed by conductive Atomic Force Microscopy (c-AFM). The PO with almost 180° phase angle is confirmed by using the vertical and lateral Piezoresponse Force Microscopy (PFM). In addition, it elucidates that obvious polarization rotation behavior can be observed in the sample with increasing Cu concentration. Furthermore, correlation of the RS behavior with PO behavior has been studied by performing various mode SPM measurements on the same location. The electric field resulted from the opposite polarization orientation are corresponded to the different resistance states. It is found that the region with the polarization in downward direction has low resistance state (LRS), whereas the region with upward polarization has high resistance state (HRS). In addition, the Piezoresponse Force Spectroscopy (PFS) and Switching Spectroscopy PFM (SS-PFM) measurements further confirm that the existence of the built-in field due to the uncomplemented polarization may affect the depletion region and hence contribute to the RS behavior. In addition, Kelvin Probe Force Microscopy (KPFM) results show that, when ZnO-based thin films is subjected to negative and then followed by positive sample bias, injection charge limit current is dominated.
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Submitted 13 February, 2018;
originally announced February 2018.
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Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate
Authors:
S. W. Zeng,
Z. Huang,
W. M. Lv,
N. N. Bao,
K. Gopinadhan,
L. K. Jian,
T. S. Herng,
Z. Q. Liu,
Y. L. Zhao,
C. J. Li,
H. J. Harsan Ma,
P. Yang,
J. Ding,
T. Venkatesan,
Ariando
Abstract:
We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by ele…
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We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects - quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (Rc) much lower than the pair quantum resistance RQ=h/(2e)2=6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs.
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Submitted 7 July, 2015;
originally announced July 2015.
