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Nuclear Spin Metrology with Nitrogen Vacancy Center in Diamond for Axion Dark Matter Detection
Authors:
So Chigusa,
Masashi Hazumi,
Ernst David Herbschleb,
Yuichiro Matsuzaki,
Norikazu Mizuochi,
Kazunori Nakayama
Abstract:
We present a method to directly detect the axion dark matter using nitrogen vacancy centers in diamonds. In particular, we use metrology leveraging the nuclear spin of nitrogen to detect axion-nucleus couplings. This is achieved through protocols designed for dark matter searches, which introduce a novel approach of quantum sensing techniques based on the nitrogen vacancy center. Although the coup…
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We present a method to directly detect the axion dark matter using nitrogen vacancy centers in diamonds. In particular, we use metrology leveraging the nuclear spin of nitrogen to detect axion-nucleus couplings. This is achieved through protocols designed for dark matter searches, which introduce a novel approach of quantum sensing techniques based on the nitrogen vacancy center. Although the coupling strength of the magnetic fields with nuclear spins is three orders of magnitude smaller than that with electron spins for conventional magnetometry, the axion interaction strength with nuclear spins is the same order of magnitude as that with electron spins. Furthermore, we can take advantage of the long coherence time by using the nuclear spins for the axion dark matter detection. We show that our method is sensitive to a broad frequency range $\lesssim 100\,\mathrm{Hz}$ corresponding to the axion mass $m_a \lesssim 4\times 10^{-13}\,\mathrm{eV}$. We present the detection limit of our method for both the axion-neutron and the axion-proton couplings and discuss its significance in comparison with other proposed ideas.
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Submitted 9 July, 2024;
originally announced July 2024.
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Light Dark Matter Search with Nitrogen-Vacancy Centers in Diamonds
Authors:
So Chigusa,
Masashi Hazumi,
Ernst David Herbschleb,
Norikazu Mizuochi,
Kazunori Nakayama
Abstract:
We propose new ideas to directly search for light dark matter, such as the axion or the dark photon, by using magnetometry with nitrogen-vacancy centers in diamonds. If the dark matter couples to the electron spin, it affects the evolution of the Bloch vectors consisting of the spin triplet states, which may be detected through several magnetometry techniques. We give several concrete examples wit…
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We propose new ideas to directly search for light dark matter, such as the axion or the dark photon, by using magnetometry with nitrogen-vacancy centers in diamonds. If the dark matter couples to the electron spin, it affects the evolution of the Bloch vectors consisting of the spin triplet states, which may be detected through several magnetometry techniques. We give several concrete examples with the use of dc and ac magnetometry and estimate the sensitivity on dark matter couplings.
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Submitted 7 May, 2024; v1 submitted 24 February, 2023;
originally announced February 2023.
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Low-frequency quantum sensing
Authors:
E. D. Herbschleb,
I. Ohki,
K. Morita,
Y. Yoshii,
H. Kato,
T. Makino,
S. Yamasaki,
N. Mizuochi
Abstract:
Exquisite sensitivities are a prominent advantage of quantum sensors. Ramsey sequences allow precise measurement of direct current fields, while Hahn-echo-like sequences measure alternating current fields. However, the latter are restrained for use with high-frequency fields (above approximately $1$ kHz) due to finite coherence times, leaving less-sensitive noncoherent methods for the low-frequenc…
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Exquisite sensitivities are a prominent advantage of quantum sensors. Ramsey sequences allow precise measurement of direct current fields, while Hahn-echo-like sequences measure alternating current fields. However, the latter are restrained for use with high-frequency fields (above approximately $1$ kHz) due to finite coherence times, leaving less-sensitive noncoherent methods for the low-frequency range. In this paper, we propose to bridge the gap with a fitting-based algorithm with a frequency-independent sensitivity to coherently measure low-frequency fields. As the algorithm benefits from coherence-based measurements, its demonstration with a single nitrogen-vacancy center gives a sensitivity of $9.4$ nT Hz$^{-0.5}$ for frequencies below about $0.6$ kHz down to near-constant fields. To inspect the potential in various scenarios, we apply the algorithm at a background field of tens of nTs, and we measure low-frequency signals via synchronization.
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Submitted 28 September, 2022;
originally announced September 2022.
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Shallow NV centers augmented by exploiting n-type diamond
Authors:
A. Watanabe,
T. Nishikawa,
H. Kato,
M. Fujie,
M. Fujiwara,
T. Makino,
S. Yamasaki,
E. D. Herbschleb,
N. Mizuochi
Abstract:
Creation of nitrogen-vacancy (NV) centers at the nanoscale surface region in diamond, while retaining their excellent spin and optical properties, is essential for applications in quantum technology. Here, we demonstrate the extension of the spin-coherence time ($\it{T}$${_2}$), the stabilization of the charge state, and an improvement of the creation yield of NV centers formed by the ion-implanta…
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Creation of nitrogen-vacancy (NV) centers at the nanoscale surface region in diamond, while retaining their excellent spin and optical properties, is essential for applications in quantum technology. Here, we demonstrate the extension of the spin-coherence time ($\it{T}$${_2}$), the stabilization of the charge state, and an improvement of the creation yield of NV centers formed by the ion-implantation technique at a depth of $\sim$15 nm in phosphorus-doped n-type diamond. The longest $\it{T}$${_2}$ of about 580 $μ$s of a shallow NV center approaches the one in bulk diamond limited by the nuclear spins of natural abundant $^{13}$C. The averaged $\it{T}$${_2}$ in n-type diamond is over 1.7 times longer than that in pure non-doped diamond. Moreover, the stabilization of the charge state and the more than twofold improvement of the creation yield are confirmed. The enhancements for the shallow NV centers in an n-type diamond-semiconductor are significant for future integrated quantum devices.
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Submitted 28 March, 2021; v1 submitted 13 December, 2020;
originally announced December 2020.
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Direct Imaging of Coherent Quantum Transport in Graphene Heterojunctions
Authors:
E. D. Herbschleb,
R. K. Puddy,
P. Marconcini,
J. P. Griffiths,
G. A. C. Jones,
M. Macucci,
C. G. Smith,
M. R. Connolly
Abstract:
We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning…
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We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning gate images. In addition to halos over the bulk we also observe ones spatially registered to the physical edge of the graphene. Guided by quantum transport simulations we attribute these to modified resonant scattering at the edges within elongated cavities that form due to focusing of the electrostatic field.
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Submitted 8 August, 2014;
originally announced August 2014.
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Reading and writing charge on graphene devices
Authors:
M. R. Connolly,
E. D. Herbschleb,
R. K. Puddy,
M. Roy,
D. Anderson,
G. A. C. Jones,
P. Maksym,
C. G. Smith
Abstract:
We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characteriz…
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We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characterize the gating effect of a realistic scanning probe tip on a graphene bilayer and find a good agreement with the experimental results.
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Submitted 2 November, 2011;
originally announced November 2011.
