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Axion Dark Matter eXperiment: Run 1A Analysis Details
Authors:
C. Boutan,
B. H. LaRoque,
E. Lentz,
N. S. Oblath,
M. S. Taubman,
J. Tedeschi,
J. Yang,
A. M. Jones,
T. Braine,
N. Crisosto,
L. J Rosenberg,
G. Rybka,
D. Will,
D. Zhang,
S. Kimes,
R. Ottens,
C. Bartram,
D. Bowring,
R. Cervantes,
A. S. Chou,
S. Knirck,
D. V. Mitchell,
A. Sonnenschein,
W. Wester,
R. Khatiwada
, et al. (28 additional authors not shown)
Abstract:
The ADMX collaboration gathered data for its Run 1A axion dark matter search from January to June 2017, scanning with an axion haloscope over the frequency range 645-680 MHz (2.66-2.81 ueV in axion mass) at DFSZ sensitivity. The resulting axion search found no axion-like signals comprising all the dark matter in the form of a virialized galactic halo over the entire frequency range, implying lower…
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The ADMX collaboration gathered data for its Run 1A axion dark matter search from January to June 2017, scanning with an axion haloscope over the frequency range 645-680 MHz (2.66-2.81 ueV in axion mass) at DFSZ sensitivity. The resulting axion search found no axion-like signals comprising all the dark matter in the form of a virialized galactic halo over the entire frequency range, implying lower bound exclusion limits at or below DFSZ coupling at the 90% confidence level. This paper presents expanded details of the axion search analysis of Run 1A, including review of relevant experimental systems, data-taking operations, preparation and interpretation of raw data, axion search methodology, candidate handling, and final axion limits.
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Submitted 27 December, 2023;
originally announced December 2023.
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Infrared spectroscopy of phase transitions in the lowest Landau levels of bilayer graphene
Authors:
B. Jordan Russell,
Matheus Schossler,
Jesse Balgley,
Yashika Kapoor,
T. Taniguchi,
K. Watanabe,
Alexander Seidel,
Yafis Barlas,
Erik A. Henriksen
Abstract:
We perform infrared magneto-spectroscopy of Landau level (LL) transitions in dual-gated bilayer graphene. At $ν=4$ when the zeroth LL (octet) is filled, two resonances are observed indicating the opening of a gap. At $ν=0$ when the octet is half-filled, multiple resonances are found to disperse non-monotonically with increasing displacement field, $D$, perpendicular to the sheet, showing a phase t…
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We perform infrared magneto-spectroscopy of Landau level (LL) transitions in dual-gated bilayer graphene. At $ν=4$ when the zeroth LL (octet) is filled, two resonances are observed indicating the opening of a gap. At $ν=0$ when the octet is half-filled, multiple resonances are found to disperse non-monotonically with increasing displacement field, $D$, perpendicular to the sheet, showing a phase transition at modest displacement fields to the layer-polarized state with a gap that opens linearly in $D$. When $D=0$ and $ν$ is varied, resonances at $\pmν$ show an electron-hole asymmetry with multiple line splittings as the octet is progressively filled. Broadly these data show good agreement with predictions from a mean-field Hartree-Fock calculation, but only by accounting for multiple tight-binding terms in a four-band model of bilayer graphene that also incorporates valley interaction anisotropy. Our results are consistent with the presence of a canted anti-ferromagnet (CAFM) ground state at $ν=0$, and imply the existence of intermediate phases in the transition from the CAFM to the layer-polarized regime.
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Submitted 4 December, 2023;
originally announced December 2023.
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Performance limits due to thermal transport in graphene single-photon bolometers
Authors:
Caleb Fried,
B. Jordan Russell,
Ethan G. Arnault,
Bevin Huang,
Gil-Ho Lee,
Dirk Englund,
Erik A. Henriksen,
Kin Chung Fong
Abstract:
In high-sensitivity bolometers and calorimeters, the photon absorption often occurs at a finite distance from the temperature sensor to accommodate antennas or avoid the degradation of superconducting circuitry exposed to radiation. As a result, thermal propagation from the input to the temperature readout can critically affect detector performance. In this report we model the performance of a gra…
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In high-sensitivity bolometers and calorimeters, the photon absorption often occurs at a finite distance from the temperature sensor to accommodate antennas or avoid the degradation of superconducting circuitry exposed to radiation. As a result, thermal propagation from the input to the temperature readout can critically affect detector performance. In this report we model the performance of a graphene bolometer, accounting for electronic thermal diffusion and dissipation via electron-phonon coupling at low temperatures in three regimes: clean, supercollision, and resonant scattering. Our results affirm the feasibility of a superconducting readout without Cooper-pair breaking by mid- and near-infrared photons, and provide a recipe for designing graphene absorbers for calorimetric single-photon detectors. We investigate the tradeoff between the input-readout distance and detector efficiency, and predict an intrinsic timing jitter of ~2.7 ps. Based on our result, we propose a spatial-mode-resolving photon detector to increase communication bandwidth.
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Submitted 14 January, 2024; v1 submitted 31 October, 2023;
originally announced November 2023.
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Isotope engineering for spin defects in van der Waals materials
Authors:
Ruotian Gong,
Xinyi Du,
Eli Janzen,
Vincent Liu,
Zhongyuan Liu,
Guanghui He,
Bingtian Ye,
Tongcang Li,
Norman Y. Yao,
James H. Edgar,
Erik A. Henriksen,
Chong Zu
Abstract:
Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal b…
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Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to $\mathrm{V}_{\mathrm{B}}^-$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded $\mathrm{V}_{\mathrm{B}}^-$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$. For quantum sensing, $\mathrm{V}_{\mathrm{B}}^-$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ($2$) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the $\mathrm{V}_{\mathrm{B}}^-$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.
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Submitted 3 January, 2024; v1 submitted 12 July, 2023;
originally announced July 2023.
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Direct visualization of the charge transfer in Graphene/$α$-RuCl$_3$ heterostructure
Authors:
Antonio Rossi,
Riccardo Dettori,
Cameron Johnson,
Jesse Balgley,
John C. Thomas,
Luca Francaviglia,
Andreas K. Schmid,
Kenji Watanabe,
Takashi Taniguchi,
Matthew Cothrine,
David G. Mandrus,
Chris Jozwiak,
Aaron Bostwick,
Erik A. Henriksen,
Alexander Weber-Bargioni,
Eli Rotenberg
Abstract:
We investigate the electronic properties of a graphene and $α$-ruthenium trichloride (hereafter RuCl$_3$) heterostructure, using a combination of experimental and theoretical techniques. RuCl$_3$ is a Mott insulator and a Kitaev material, and its combination with graphene has gained increasing attention due to its potential applicability in novel electronic and optoelectronic devices. By using a c…
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We investigate the electronic properties of a graphene and $α$-ruthenium trichloride (hereafter RuCl$_3$) heterostructure, using a combination of experimental and theoretical techniques. RuCl$_3$ is a Mott insulator and a Kitaev material, and its combination with graphene has gained increasing attention due to its potential applicability in novel electronic and optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy, low energy electron microscopy, and density functional theory (DFT) calculations we are able to provide a first direct visualization of the massive charge transfer from graphene to RuCl$_3$, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. The electronic band structure is compared to DFT calculations that confirm the occurrence of a Mott transition for RuCl$_3$. Finally, a measurement of spatially resolved work function allows for a direct estimate of the interface dipole between graphene and RuCl$_3$. The strong coupling between graphene and RuCl$_3$ could lead to new ways of manipulating electronic properties of two-dimensional lateral heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power opto-electronics devices.
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Submitted 29 May, 2023; v1 submitted 26 May, 2023;
originally announced May 2023.
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Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride
Authors:
Ruotian Gong,
Guanghui He,
Xingyu Gao,
Peng Ju,
Zhongyuan Liu,
Bingtian Ye,
Erik A. Henriksen,
Tongcang Li,
Chong Zu
Abstract:
Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ($\mathrm{V}_{\mathrm{B}}^-$) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolat…
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Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ($\mathrm{V}_{\mathrm{B}}^-$) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolate different dephasing sources, we observe more than 5-fold improvement in the measured coherence times across all hBN samples. Crucially, we identify that the many-body interaction within the $\mathrm{V}_{\mathrm{B}}^-$ ensemble plays a substantial role in the coherent dynamics, which is then used to directly estimate the concentration of $\mathrm{V}_{\mathrm{B}}^-$. We find that at high ion implantation dosage, only a small portion of the created boron vacancy defects are in the desired negatively charged state. Finally, we investigate the spin response of $\mathrm{V}_{\mathrm{B}}^-$ to the local charged defects induced electric field signals, and estimate its ground state transverse electric field susceptibility. Our results provide new insights on the spin and charge properties of $\mathrm{V}_{\mathrm{B}}^-$, which are important for future use of defects in hBN as quantum sensors and simulators.
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Submitted 12 July, 2023; v1 submitted 20 October, 2022;
originally announced October 2022.
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Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene
Authors:
Jesse Balgley,
Jackson Butler,
Sananda Biswas,
Zhehao Ge,
Samuel Lagasse,
Takashi Taniguchi,
Kenji Watanabe,
Matthew Cothrine,
David G. Mandrus,
Jairo Velasco Jr.,
Roser Valentí,
Erik A. Henriksen
Abstract:
We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$-RuCl$_3$ acro…
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We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $α$-RuCl$_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $α$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-do** of graphene decays sharply over just nanometers from the edge of the $α$-RuCl$_3$ flake.
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Submitted 31 May, 2022; v1 submitted 11 March, 2022;
originally announced March 2022.
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Nitrogen Plasma Passivated Niobium Resonators for Superconducting Quantum Circuits
Authors:
K. Zheng,
D. Kowsari,
N. J. Thobaben,
X. Du,
X. Song,
S. Ran,
E. A. Henriksen,
D. S. Wisbey,
K. W. Murch
Abstract:
Microwave loss in niobium metallic structures used for superconducting quantum circuits is limited by a native surface oxide layer formed over a timescale of minutes when exposed to an ambient environment. In this work, we show that nitrogen plasma treatment forms a niobium nitride layer at the metal-air interface which prevents such oxidation. X-ray photoelectron spectroscopy confirms the do**…
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Microwave loss in niobium metallic structures used for superconducting quantum circuits is limited by a native surface oxide layer formed over a timescale of minutes when exposed to an ambient environment. In this work, we show that nitrogen plasma treatment forms a niobium nitride layer at the metal-air interface which prevents such oxidation. X-ray photoelectron spectroscopy confirms the do** of nitrogen more than 5 nm into the surface and a suppressed oxygen presence. This passivation remains stable after aging for 15 days in an ambient environment. Cryogenic microwave characterization shows an average filling factor adjusted two-level-system loss tangent $\rm{Fδ_{TLS}}$ of $(2.9\pm0.5)\cdot10^{-7}$ for resonators with 3 $\rmμ$m center strip and $(1.0\pm0.3)\cdot10^{-7}$ for 20 $\rmμ$m center strip, exceeding the performance of unpassivated samples by a factor of four.
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Submitted 18 February, 2022; v1 submitted 5 January, 2022;
originally announced January 2022.
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Helium surface fluctuations investigated with superconducting coplanar waveguide resonator
Authors:
N. R. Beysengulov,
C. A. Mikolas,
J. M. Kitzman,
J. R. Lane,
D. Edmunds,
D. G. Rees,
E. A. Henriksen,
S. A. Lyon,
J. Pollanen
Abstract:
Recent experiments on the coupling of the in-plane motional state of electrons floating on the surface of liquid helium to a microwave resonator have revealed the importance of helium surface fluctuations to the coherence of this motion. Here we investigate these surface fluctuations by studying the resonance properties of a superconducting coplanar waveguide (CPW) resonator filled with superfluid…
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Recent experiments on the coupling of the in-plane motional state of electrons floating on the surface of liquid helium to a microwave resonator have revealed the importance of helium surface fluctuations to the coherence of this motion. Here we investigate these surface fluctuations by studying the resonance properties of a superconducting coplanar waveguide (CPW) resonator filled with superfluid helium, where a significant fraction of the resonator's electromagnetic mode volume is coupled to the surface dynamics of the liquid. We present preliminary results on real-time CPW resonator frequency shifts driven by helium fluctuations, which are quantified via their power spectral density and compared with measurements using a commercial accelerometer. We find that a considerable contribution to the CPW resonator noise originates from the mechanical vibrations of the helium surface generated by the pulse tube (PT) cryocooler on the cryostat on which the experiments were performed.
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Submitted 13 July, 2022; v1 submitted 3 November, 2021;
originally announced November 2021.
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Fabrication and surface treatment of electron-beam evaporated niobium for low-loss coplanar waveguide resonators
Authors:
D. Kowsari,
K. Zheng,
J. T. Monroe,
N. J. Thobaben,
X. Du,
P. M. Harrington,
E. A. Henriksen,
D. S. Wisbey,
K. W. Murch
Abstract:
We characterize low-loss electron-beam evaporated niobium thin films deposited under ultra-high vacuum conditions. Slow deposition yields films with a high superconducting transition temperature ($9.20 \pm 0.06 \rm ~K$) as well as a residual resistivity ratio of $4.8$. We fabricate the films into coplanar waveguide resonators to extract the intrinsic loss due to the presence of two-level-system fl…
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We characterize low-loss electron-beam evaporated niobium thin films deposited under ultra-high vacuum conditions. Slow deposition yields films with a high superconducting transition temperature ($9.20 \pm 0.06 \rm ~K$) as well as a residual resistivity ratio of $4.8$. We fabricate the films into coplanar waveguide resonators to extract the intrinsic loss due to the presence of two-level-system fluctuators using microwave measurements. For a coplanar waveguide resonator gap of $2~μ\rm m$, the films exhibit filling-factor-adjusted two-level-system loss tangents as low as $1.5 \times 10^{-7}$ with single-photon regime internal quality factors in excess of one million after removing native surface oxides of the niobium.
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Submitted 4 October, 2021; v1 submitted 11 August, 2021;
originally announced August 2021.
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Axion Dark Matter eXperiment: Run 1B Analysis Details
Authors:
ADMX Collaboration,
C. Bartram,
T. Braine,
R. Cervantes,
N. Crisosto,
N. Du,
G. Leum,
L. J Rosenberg,
G. Rybka,
J. Yang,
D. Bowring,
A. S. Chou,
R. Khatiwada,
A. Sonnenschein,
W. Wester,
G. Carosi,
N. Woollett,
L. D. Duffy,
M. Goryachev,
B. McAllister,
M. E. Tobar,
C. Boutan,
M. Jones,
B. H. Laroque,
N. S. Oblath
, et al. (23 additional authors not shown)
Abstract:
Searching for axion dark matter, the ADMX collaboration acquired data from January to October 2018, over the mass range 2.81--3.31 $μ$eV, corresponding to the frequency range 680--790 MHz. Using an axion haloscope consisting of a microwave cavity in a strong magnetic field, the ADMX experiment excluded Dine-Fischler-Srednicki-Zhitnisky (DFSZ) axions at 100% dark matter density over this entire fre…
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Searching for axion dark matter, the ADMX collaboration acquired data from January to October 2018, over the mass range 2.81--3.31 $μ$eV, corresponding to the frequency range 680--790 MHz. Using an axion haloscope consisting of a microwave cavity in a strong magnetic field, the ADMX experiment excluded Dine-Fischler-Srednicki-Zhitnisky (DFSZ) axions at 100% dark matter density over this entire frequency range, except for a few gaps due to mode crossings. This paper explains the full ADMX analysis for Run 1B, motivating analysis choices informed by details specific to this run.
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Submitted 13 October, 2020;
originally announced October 2020.
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Axion Dark Matter eXperiment: Detailed Design and Operations
Authors:
R. Khatiwada,
D. Bowring,
A. S. Chou,
A. Sonnenschein,
W. Wester,
D. V. Mitchell,
T. Braine,
C. Bartram,
R. Cervantes,
N. Crisosto,
N. Du,
S. Kimes,
L. J Rosenberg,
G. Rybka,
J. Yang,
D. Will,
G. Carosi,
N. Woollett,
S. Durham,
L. D. Duffy,
R. Bradley,
C. Boutan,
M. Jones,
B. H. LaRoque,
N. S. Oblath
, et al. (26 additional authors not shown)
Abstract:
Axion Dark Matter eXperiment (ADMX) ultra low noise haloscope technology has enabled the successful completion of two science runs (1A and 1B) that looked for dark matter axions in the $2.66$ to $3.1$ $μ$eV mass range with Dine-Fischler-Srednicki-Zhitnisky (DFSZ) sensitivity Ref. [1,2]. Therefore, it is the most sensitive axion search experiment to date in this mass range. We discuss the technolog…
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Axion Dark Matter eXperiment (ADMX) ultra low noise haloscope technology has enabled the successful completion of two science runs (1A and 1B) that looked for dark matter axions in the $2.66$ to $3.1$ $μ$eV mass range with Dine-Fischler-Srednicki-Zhitnisky (DFSZ) sensitivity Ref. [1,2]. Therefore, it is the most sensitive axion search experiment to date in this mass range. We discuss the technological advances made in the last several years to achieve this sensitivity, which includes the implementation of components, such as state-of-the-art quantum limited amplifiers and a dilution refrigerator. Furthermore, we demonstrate the use of a frequency tunable Microstrip Superconducting Quantum Interference Device (SQUID) Amplifier (MSA), in Run 1A, and a Josephson Parametric Amplifier (JPA), in Run 1B, along with novel analysis tools that characterize the system noise temperature.
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Submitted 30 September, 2020;
originally announced October 2020.
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Modulation Do** via a 2d Atomic Crystalline Acceptor
Authors:
Yi** Wang,
Jesse Balgley,
Eli Gerber,
Mason Gray,
Narendra Kumar,
Xiaobo Lu,
Jia-Qiang Yan,
Arash Fereidouni,
Rabindra Basnet,
Seok Joon Yun,
Dhavala Suri,
Hikari Kitadai,
Takashi Taniguchi,
Kenji Watanabe,
Xi Ling,
Jagadeesh Moodera,
Young Hee Lee,
Hugh O. H. Churchill,
** Hu,
Li Yang,
Eun-Ah Kim,
David G. Mandrus,
Erik A. Henriksen,
Kenneth S. Burch
Abstract:
Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation do** of exfoliated, chemical vapor de…
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Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation do** of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral do** (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN).
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Submitted 15 July, 2020; v1 submitted 13 July, 2020;
originally announced July 2020.
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Extraordinary magnetoresistance in encapsulated monolayer graphene devices
Authors:
Bowen Zhou,
Kenji Watanabe,
Takashi Taniguchi,
Erik A. Henriksen
Abstract:
We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values, $MR=(R(B) - R_0) / R_0\sim 10^5$, are achieved in part because $R_0$ approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mo…
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We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values, $MR=(R(B) - R_0) / R_0\sim 10^5$, are achieved in part because $R_0$ approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mobility bulk semiconductor devices. We highlight the sensitivity, $dR/dB$, which in two-terminal measurements is the highest yet reported for EMR devices, and in particular exceeds prior results in graphene-based devices by a factor of 20. An asymmetry in the zero-field transport is traced to the presence of $pn$-junctions at the graphene-metal shunt interface.
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Submitted 3 February, 2020;
originally announced February 2020.
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Broken symmetries and Kohn's theorem in graphene cyclotron resonance
Authors:
Jordan Pack,
B. Jordan Russell,
Yashika Kapoor,
Jesse Balgley,
Jeff Ahlers,
Takashi Taniguchi,
Kenji Watanabe,
Erik A. Henriksen
Abstract:
The magnetoplasmon spectrum of Landau level transitions in hexagonal boron nitride-encapsulated graphene is explored via infrared transmission magnetospectroscopy, as a function of the filling factor at fixed magnetic field. As the lowest Landau level occupancy is increased from half-filling, a non-monotonic progression of multiple cyclotron resonance peaks is observed, with a single peak evolving…
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The magnetoplasmon spectrum of Landau level transitions in hexagonal boron nitride-encapsulated graphene is explored via infrared transmission magnetospectroscopy, as a function of the filling factor at fixed magnetic field. As the lowest Landau level occupancy is increased from half-filling, a non-monotonic progression of multiple cyclotron resonance peaks is observed, with a single peak evolving into four peaks and back to two, all with linewidths of order 0.5 meV. This provides a novel window on the interplay of electron interactions with broken spin and valley symmetries in the quantum Hall regime. Analysis of the peak energies shows an indirect enhancement of spin gaps below the Fermi energy, a Dirac mass at half-filling that is nearly 50\% larger than when the lowest Landau level is completely full, and a small but clear particle-hole asymmetry. We suggest a key role is played by the boron nitride in enabling interaction-enhanced broken symmetries to be observed in graphene cyclotron resonance.
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Submitted 3 August, 2020; v1 submitted 23 January, 2020;
originally announced January 2020.
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Unexpected hole do** of graphene by osmium adatoms
Authors:
Jamie A. Elias,
Erik A. Henriksen
Abstract:
The electronic transport of monolayer graphene devices is studied before and after \emph{in situ} deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-d…
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The electronic transport of monolayer graphene devices is studied before and after \emph{in situ} deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge-do** efficiency. The charge neutrality point of graphene is found to vary non-monotonically with gate voltage as the sample is warmed to room temperature, suggesting that osmium diffuses on the surface but is not completely removed.
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Submitted 9 December, 2019;
originally announced December 2019.
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Optically Driven Magnetic Phase Transition of Monolayer RuCl3
Authors:
Yingzhen Tian,
Weiwei Gao,
Erik A. Henriksen,
James R. Chelikowsky,
Li Yang
Abstract:
Strong light-matter interactions within nanoscale structures offer the possibility of optically controlling material properties. Motivated by the recent discovery of intrinsic long-range magnetic order in two-dimensional materials, which allows for the creation of novel magnetic devices of unprecedented small size, we predict that light can couple with magnetism and efficiently tune magnetic order…
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Strong light-matter interactions within nanoscale structures offer the possibility of optically controlling material properties. Motivated by the recent discovery of intrinsic long-range magnetic order in two-dimensional materials, which allows for the creation of novel magnetic devices of unprecedented small size, we predict that light can couple with magnetism and efficiently tune magnetic orders of monolayer ruthenium trichloride (RuCl3). First-principles calculations show that both free carriers and optically excited electron-hole pairs can switch monolayer RuCl3 from the proximate spin-liquid phase to a stable ferromagnetic phase. Specifically, a moderate electron-hole pair density (on the order of 10^13 cm-2) can significantly stabilize the ferromagnetic phase by 10 meV/f.u. in comparison to the zigzag phase, so that the predicted ferromagnetism can be driven by optical pum** experiments. Analysis shows that this magnetic phase transition is driven by a combined effect of do**-induced lattice strain and itinerant ferromagnetism. According to the Ising-model calculation, we find that the Curie temperature of the ferromagnetic phase can be increased significantly by raising carrier or electron-hole pair density. This enhanced opto-magnetic effect opens new opportunities to manipulate two-dimensional magnetism through non-contact, optical approaches.
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Submitted 3 November, 2019;
originally announced November 2019.
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Extended Search for the Invisible Axion with the Axion Dark Matter Experiment
Authors:
T. Braine,
R. Cervantes,
N. Crisosto,
N. Du,
S. Kimes,
L. J Rosenberg,
G. Rybka,
J. Yang,
D. Bowring,
A. S. Chou,
R. Khatiwada,
A. Sonnenschein,
W. Wester,
G. Carosi,
N. Woollett,
L. D. Duffy,
R. Bradley,
C. Boutan,
M. Jones,
B. H. LaRoque,
N. S. Oblath,
M. S. Taubman,
J. Clarke,
A. Dove,
A. Eddins
, et al. (17 additional authors not shown)
Abstract:
This paper reports on a cavity haloscope search for dark matter axions in the galactic halo in the mass range $2.81$-$3.31$ $μeV$. This search excludes the full range of axion-photon coupling values predicted in benchmark models of the invisible axion that solve the strong CP problem of quantum chromodynamics, and marks the first time a haloscope search has been able to search for axions at mode c…
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This paper reports on a cavity haloscope search for dark matter axions in the galactic halo in the mass range $2.81$-$3.31$ $μeV$. This search excludes the full range of axion-photon coupling values predicted in benchmark models of the invisible axion that solve the strong CP problem of quantum chromodynamics, and marks the first time a haloscope search has been able to search for axions at mode crossings using an alternate cavity configuration. Unprecedented sensitivity in this higher mass range is achieved by deploying an ultra low-noise Josephson parametric amplifier as the first stage signal amplifier.
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Submitted 1 November, 2019; v1 submitted 18 October, 2019;
originally announced October 2019.
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Evidence for charge transfer and proximate magnetism in graphene/a-RuCl_3 heterostructures
Authors:
Boyi Zhou,
J. Balgley,
P. Lampen-Kelley,
J. -Q. Yan,
D. G. Mandrus,
E. A. Henriksen
Abstract:
We report a study of electronic transport in van der Waals heterostructures composed of flakes of the antiferromagnetic Mott insulator a-RuCl_3 placed on top of monolayer graphene Hall bars. While the zero-field transport shows a strong resemblance to that of isolated graphene, we find a consistently $p$-type Hall effect suggestive of multiband conduction, along with a non-monotonic and gate-volta…
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We report a study of electronic transport in van der Waals heterostructures composed of flakes of the antiferromagnetic Mott insulator a-RuCl_3 placed on top of monolayer graphene Hall bars. While the zero-field transport shows a strong resemblance to that of isolated graphene, we find a consistently $p$-type Hall effect suggestive of multiband conduction, along with a non-monotonic and gate-voltage-dependent excursion of the resistivity at low temperatures that is reminiscent of transport in the presence of a magnetic phase transition. We interpret these data as evidence for charge transfer from graphene to a-RuCl_3 in an inhomogeneous device yielding both highly- and lightly-doped regions of graphene, while the latter shows a particular sensitivity to magnetism in the a-RuCl_3. Thus proximity to graphene is a means to access magnetic properties of thin layers of magnetic insulators.
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Submitted 9 December, 2019; v1 submitted 12 November, 2018;
originally announced November 2018.
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Flip-chip gate-tunable acoustoelectric effect in graphene
Authors:
J. R. Lane,
L. Zhang,
M. A. Khasawneh,
B. N. Zhou,
E. A. Henriksen,
J. Pollanen
Abstract:
We demonstrate a flip-chip device for performing low-temperature acoustoelectric measurements on exfoliated two-dimensional materials. With this device, we study gate-tunable acoustoelectric transport in an exfoliated monolayer graphene device, measuring the voltage created as high-frequency surface acoustic waves dynamically drive the graphene charge carriers, the density of which we simultaneous…
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We demonstrate a flip-chip device for performing low-temperature acoustoelectric measurements on exfoliated two-dimensional materials. With this device, we study gate-tunable acoustoelectric transport in an exfoliated monolayer graphene device, measuring the voltage created as high-frequency surface acoustic waves dynamically drive the graphene charge carriers, the density of which we simultaneously control with a silicon back-gate. We demonstrate ambipolar dependence of the acoustoelectric signal, as expected from the sign of the graphene charge carriers. We observe a marked reduction in the magnitude of the acoustoelectric signal over a well-defined range of density in the vicinity of charge neutrality, which we attribute to a spatially heterogeneous charge-disorder landscape not directly revealed by conventional transport measurements.
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Submitted 20 November, 2018; v1 submitted 16 January, 2018;
originally announced January 2018.
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Many-particle effects in the cyclotron resonance of encapsulated monolayer graphene
Authors:
B. Jordan Russell,
Boyi Zhou,
T. Taniguchi,
K. Watanabe,
Erik A. Henriksen
Abstract:
We study the infrared cyclotron resonance of high mobility monolayer graphene encapsulated in hexagonal boron nitride, and simultaneously observe several narrow resonance lines due to interband Landau level transitions. By holding the magnetic field strength, $B$, constant while tuning the carrier density, $n$, we find the transition energies show a pronounced non-monotonic dependence on the Landa…
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We study the infrared cyclotron resonance of high mobility monolayer graphene encapsulated in hexagonal boron nitride, and simultaneously observe several narrow resonance lines due to interband Landau level transitions. By holding the magnetic field strength, $B$, constant while tuning the carrier density, $n$, we find the transition energies show a pronounced non-monotonic dependence on the Landau level filling factor, $ν\propto n/B$. This constitutes direct evidence that electron-electron interactions contribute to the Landau level transition energies in graphene, beyond the single-particle picture. Additionally, a splitting occurs in transitions to or from the lowest Landau level, which is interpreted as a Dirac mass arising from coupling of the graphene and boron nitride lattices.
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Submitted 26 January, 2018; v1 submitted 1 September, 2017;
originally announced September 2017.
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Possible Structural Transformation and Enhanced Magnetic Fluctuations in Exfoliated $α$-RuCl$_3$
Authors:
Boyi Zhou,
Yi** Wang,
Gavin B. Osterhoudt,
Paige Kelly,
David Mandrus,
Rui He,
Kenneth S. Burch,
Erik A. Henriksen
Abstract:
We present initial Raman spectroscopy experiments on exfoliated flakes of $α$-RuCl$_3$, from tens of nm thick down to single layers. Besides unexpectedly finding this material to be air stable, in the thinnest layers we observe the appearance with decreasing temperature of a symmetry-forbidden mode in crossed polarization, along with an anomalous broadening of a mode at 164 cm$^{-1}$ that is known…
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We present initial Raman spectroscopy experiments on exfoliated flakes of $α$-RuCl$_3$, from tens of nm thick down to single layers. Besides unexpectedly finding this material to be air stable, in the thinnest layers we observe the appearance with decreasing temperature of a symmetry-forbidden mode in crossed polarization, along with an anomalous broadening of a mode at 164 cm$^{-1}$ that is known to couple to a continuum of magnetic excitations. This may be due to an enhancement of magnetic fluctuations and evidence for a distorted honeycomb lattice in single- and bi-layer samples.
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Submitted 1 September, 2017;
originally announced September 2017.
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Electronic transport and scattering times in tungsten-decorated graphene
Authors:
Jamie A. Elias,
Erik A. Henriksen
Abstract:
The electronic transport properties of monolayer graphene have been studied before and after the deposition of a dilute coating of tungsten adatoms on the surface. For coverages up to 2.5\% of a monolayer, we find tungsten adatoms simultaneously donate electrons to graphene and reduce the carrier mobility, impacting the zero- and finite-field transport properties. Two independent transport analyse…
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The electronic transport properties of monolayer graphene have been studied before and after the deposition of a dilute coating of tungsten adatoms on the surface. For coverages up to 2.5\% of a monolayer, we find tungsten adatoms simultaneously donate electrons to graphene and reduce the carrier mobility, impacting the zero- and finite-field transport properties. Two independent transport analyses suggest the adatoms lie nearly 1 nm above the surface. The presence of adatoms is also seen to impact the low field magnetoresistance, altering the signatures of weak localization.
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Submitted 31 October, 2016; v1 submitted 28 October, 2016;
originally announced October 2016.
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Transport in indium-decorated graphene
Authors:
U. Chandni,
Erik A. Henriksen,
J. P. Eisenstein
Abstract:
The electronic transport properties of single layer graphene having a dilute coating of indium adatoms has been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed ov…
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The electronic transport properties of single layer graphene having a dilute coating of indium adatoms has been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed over a wide density range after In do**. The low field magnetoresistance carries signatures of quantum interference effects which are significantly altered by the adatoms.
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Submitted 13 March, 2015;
originally announced March 2015.
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Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene
Authors:
E. A. Henriksen,
D. Nandi,
J. P. Eisenstein
Abstract:
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find that both the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolaye…
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The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find that both the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau level splittings due to a lifting of the valley degeneracy are clearly observed.
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Submitted 19 January, 2012; v1 submitted 12 September, 2011;
originally announced September 2011.
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Measurement of the electronic compressibility of bilayer graphene
Authors:
E. A. Henriksen,
J. P. Eisenstein
Abstract:
We present measurements of the electronic compressibility, $K$, of bilayer graphene in both zero and finite magnetic fields up to 14 T, and as a function of both the carrier density and electric field perpendicular to the graphene sheet. The low energy hyperbolic band structure of bilayer graphene is clearly revealed in the data, as well as a sizable asymmetry between the conduction and valence ba…
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We present measurements of the electronic compressibility, $K$, of bilayer graphene in both zero and finite magnetic fields up to 14 T, and as a function of both the carrier density and electric field perpendicular to the graphene sheet. The low energy hyperbolic band structure of bilayer graphene is clearly revealed in the data, as well as a sizable asymmetry between the conduction and valence bands. A sharp increase in $K^{-1}$ near zero density is observed for increasing electric field strength, signaling the controlled opening of a gap between these bands. At high magnetic fields, broad Landau level (LL) oscillations are observed, directly revealing the doubled degeneracy of the lowest LL and allowing for a determination of the disorder broadening of the levels.
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Submitted 27 July, 2010; v1 submitted 14 April, 2010;
originally announced April 2010.
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Interaction-induced shift of the cyclotron resonance of graphene using infrared spectroscopy
Authors:
E. A. Henriksen,
P. Cadden-Zimansky,
Z. Jiang,
Z. Q. Li,
L. -C. Tung,
M. E. Schwartz,
M. Takita,
Y. -J. Wang,
P. Kim,
H. L. Stormer
Abstract:
We report a study of the cyclotron resonance (CR) transitions to and from the unusual $n=0$ Landau level (LL) in monolayer graphene. Unexpectedly, we find the CR transition energy exhibits large (up to 10%) and non-monotonic shifts as a function of the LL filling factor, with the energy being largest at half-filling of the $n=0$ level. The magnitude of these shifts, and their magnetic field depe…
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We report a study of the cyclotron resonance (CR) transitions to and from the unusual $n=0$ Landau level (LL) in monolayer graphene. Unexpectedly, we find the CR transition energy exhibits large (up to 10%) and non-monotonic shifts as a function of the LL filling factor, with the energy being largest at half-filling of the $n=0$ level. The magnitude of these shifts, and their magnetic field dependence, suggests that an interaction-enhanced energy gap opens in the $n=0$ level at high magnetic fields. Such interaction effects normally have limited impact on the CR due to Kohn's theorem [W. Kohn, Phys. Rev. {\bf 123}, 1242 (1961)], which does not apply in graphene as a consequence of the underlying linear band structure.
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Submitted 17 February, 2010; v1 submitted 23 October, 2009;
originally announced October 2009.
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Dirac charge dynamics in graphene by infrared spectroscopy
Authors:
Z. Q. Li,
E. A. Henriksen,
Z. Jiang,
Z. Hao,
M. C. Martin,
P. Kim,
H. L. Stormer,
D. N. Basov
Abstract:
A remarkable manifestation of the quantum character of electrons in matter is offered by graphene, a single atomic layer of graphite. Unlike conventional solids where electrons are described with the Schrodinger equation, electronic excitations in graphene are governed by the Dirac Hamiltonian. Some of the intriguing electronic properties of graphene, such as massless Dirac quasiparticles with l…
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A remarkable manifestation of the quantum character of electrons in matter is offered by graphene, a single atomic layer of graphite. Unlike conventional solids where electrons are described with the Schrodinger equation, electronic excitations in graphene are governed by the Dirac Hamiltonian. Some of the intriguing electronic properties of graphene, such as massless Dirac quasiparticles with linear energy-momentum dispersion, have been confirmed by recent observations. Here we report an infrared (IR) spectromicroscopy study of charge dynamics in graphene integrated in gated devices. Our measurements verify the expected characteristics of graphene and, owing to the previously unattainable accuracy of IR experiments, also uncover significant departures of the quasiparticle dynamics from predictions made for Dirac fermions in idealized, free standing graphene. Several observations, including a marked deviation of the energy bands from the simple linear dispersion, point to the relevance of many body interactions to the rather exotic electromagnetic response in graphene.
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Submitted 15 September, 2008; v1 submitted 23 July, 2008;
originally announced July 2008.
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Band structure asymmetry of bilayer graphene revealed by infrared spectroscopy
Authors:
Z. Q. Li,
E. A. Henriksen,
Z. Jiang,
Z. Hao,
M. C. Martin,
P. Kim,
H. L. Stormer,
D. N. Basov
Abstract:
We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observed a significant asymmetry in the optical conductivity upon electrostatic do** of electrons and holes. We show that this finding arises from a marked asymmetry between the valence and conduction bands, which is mainly due to the inequivalence of the two sublattices within the graphene layer. From th…
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We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observed a significant asymmetry in the optical conductivity upon electrostatic do** of electrons and holes. We show that this finding arises from a marked asymmetry between the valence and conduction bands, which is mainly due to the inequivalence of the two sublattices within the graphene layer. From the conductivity data, the energy difference of the two sublattices is determined.
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Submitted 23 July, 2008;
originally announced July 2008.
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Cyclotron resonance in bilayer graphene
Authors:
E. A. Henriksen,
Z. Jiang,
L. -C. Tung,
M. E. Schwartz,
M. Takita,
Y. -J. Wang,
P. Kim,
H. L. Stormer
Abstract:
We present the first measurements of cyclotron resonance of electrons and holes in bilayer graphene. In magnetic fields up to B = 18 T we observe four distinct intraband transitions in both the conduction and valence bands. The transition energies are roughly linear in B between the lowest Landau levels, whereas they follow \sqrt{B} for the higher transitions. This highly unusual behavior repres…
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We present the first measurements of cyclotron resonance of electrons and holes in bilayer graphene. In magnetic fields up to B = 18 T we observe four distinct intraband transitions in both the conduction and valence bands. The transition energies are roughly linear in B between the lowest Landau levels, whereas they follow \sqrt{B} for the higher transitions. This highly unusual behavior represents a change from a parabolic to a linear energy dispersion. The density of states derived from our data generally agrees with the existing lowest order tight binding calculation for bilayer graphene. However in comparing data to theory, a single set of fitting parameters fails to describe the experimental results.
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Submitted 23 February, 2008; v1 submitted 11 January, 2008;
originally announced January 2008.
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Observation of Anomalous Phonon Softening in Bilayer Graphene
Authors:
Jun Yan,
Erik A. Henriksen,
Philip Kim,
Aron Pinczuk
Abstract:
The interaction of electron-hole pairs with lattice vibrations exhibits a wealth of intriguing physical phenomena. The Kohn anomaly is a renowned example where electron-phonon coupling leads to non-analytic phonon dispersion at specific momentum nesting the Fermi surface. Here we report evidence of another type of phonon anomaly discovered by low temperature Raman spectroscopy in bilayer graphen…
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The interaction of electron-hole pairs with lattice vibrations exhibits a wealth of intriguing physical phenomena. The Kohn anomaly is a renowned example where electron-phonon coupling leads to non-analytic phonon dispersion at specific momentum nesting the Fermi surface. Here we report evidence of another type of phonon anomaly discovered by low temperature Raman spectroscopy in bilayer graphene where the charge density is modulated by the electric field effect. This anomaly, arising from charge-tunable modulations of particle-hole pairs that are resonantly coupled to lattice vibrations, is predicted to exhibit a logarithmic divergence in the long-wavelength optical-phonon energy. In a non-uniform bilayer of graphene, the logarithmic divergence is abated by charge density inhomogeneity leaving as a vestige an anomalous phonon softening. The observed softening marks the first confirmation of the phonon anomaly as a key signature of the resonant deformation-potential electron-phonon coupling. The high sensitivity of the phonon softening to charge density non-uniformity creates significant venues to explore the interplay between fundamental interactions and disorder in the atomic layers.
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Submitted 22 December, 2007;
originally announced December 2007.
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Infrared spectroscopy of Landau levels in graphene
Authors:
Z. Jiang,
E. A. Henriksen,
L. C. Tung,
Y. -J. Wang,
M. E. Schwartz,
M. Y. Han,
P. Kim,
H. L. Stormer
Abstract:
We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show \textit{in situ} half-integer quantum Hall plateaus. Infrared transmission is measured in magnetic fields up to B=18 T at selected LL fillings. Resonances between hole LLs and electron LLs, as well as resonances between hole and electron LLs are resolved. Their tra…
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We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show \textit{in situ} half-integer quantum Hall plateaus. Infrared transmission is measured in magnetic fields up to B=18 T at selected LL fillings. Resonances between hole LLs and electron LLs, as well as resonances between hole and electron LLs are resolved. Their transition energies are proportional to $\sqrt{B}$ and the deduced band velocity is $\tilde{c}\approx1.1\times10^6$ m/s. The lack of precise scaling between different LL transitions indicates considerable contributions of many-particle effects to the infrared transition energies.
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Submitted 5 April, 2007; v1 submitted 30 March, 2007;
originally announced March 2007.
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Disorder mediated splitting of the cyclotron resonance in two-dimensional electron systems
Authors:
E. A. Henriksen,
S. Syed,
Y. -J. Wang,
H. L. Stormer,
L. N. Pfeiffer,
K. W. West
Abstract:
We perform a direct study of the magnitude of the anomalous splitting in the cyclotron resonance (CR) of a two-dimensional electron system (2DES) as a function of sample disorder. In a series of AlGaAs/GaAs quantum wells, identical except for a range of carbon do** in the well, we find the CR splitting to vanish at high sample mobilities but to increase dramatically with increasing impurity de…
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We perform a direct study of the magnitude of the anomalous splitting in the cyclotron resonance (CR) of a two-dimensional electron system (2DES) as a function of sample disorder. In a series of AlGaAs/GaAs quantum wells, identical except for a range of carbon do** in the well, we find the CR splitting to vanish at high sample mobilities but to increase dramatically with increasing impurity density and electron scattering rates. This observation lends strong support to the conjecture that the non-zero wavevector, roton-like minimum in the dispersion of 2D magnetoplasmons comes into resonance with the CR, with the two modes being coupled via disorder.
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Submitted 5 June, 2006;
originally announced June 2006.
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Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field effect transistor
Authors:
E. A. Henriksen,
S. Syed,
Y. Ahmadian,
M. J. Manfra,
K. W. Baldwin,
A. M. Sergent,
R. J. Molnar,
H. L. Stormer
Abstract:
We report on the temperature dependence of the mobility, $μ$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to 3.0$\times10^{12}$ cm$^{-2}$ and a peak mobility of 80,000 cm$^{2}$/Vs. Between 20 K and 50 K we observe a linear dependence $μ_{ac}^{-1} = α$T indicating that acoustic phonon…
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We report on the temperature dependence of the mobility, $μ$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to 3.0$\times10^{12}$ cm$^{-2}$ and a peak mobility of 80,000 cm$^{2}$/Vs. Between 20 K and 50 K we observe a linear dependence $μ_{ac}^{-1} = α$T indicating that acoustic phonon scattering dominates the temperature dependence of the mobility, with $α$ being a monotonically increasing function of decreasing 2D electron density. This behavior is contrary to predictions of scattering in a degenerate electron gas, but consistent with calculations which account for thermal broadening and the temperature dependence of the electron screening. Our data imply a deformation potential D = 12-15 eV.
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Submitted 27 March, 2005;
originally announced March 2005.