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0D-2D Heterostructure for making very Large Quantum Registers using itinerant Bose-Einstein Condensate of Excitons
Authors:
Amit Bhunia,
Mohit Kumar Singh,
Maryam Al Huwayz,
Mohamed Henini,
Shouvik Datta
Abstract:
Presence of coherent resonant tunneling in quantum dot (zero-dimensional) - quantum well (two-dimensional) heterostructure is necessary to explain the collective oscillations of average electrical polarization of excitonic dipoles over a macroscopically large area. This was measured using photo excited capacitance as a function of applied voltage bias. Resonant tunneling in this heterostructure de…
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Presence of coherent resonant tunneling in quantum dot (zero-dimensional) - quantum well (two-dimensional) heterostructure is necessary to explain the collective oscillations of average electrical polarization of excitonic dipoles over a macroscopically large area. This was measured using photo excited capacitance as a function of applied voltage bias. Resonant tunneling in this heterostructure definitely requires momentum space narrowing of charge carriers inside the quantum well and that of associated indirect excitons, which indicates bias dependent itinerant Bose-Einstein condensation of excitons. Observation of periodic variations in negative quantum capacitance points to in-plane coulomb correlations mediated by long range spatial ordering of indirect, dipolar excitons. Enhanced contrast of quantum interference beats of excitonic polarization waves even under white light and observed Rabi oscillations over a macroscopically large area also support the presence of density driven excitonic condensation having long range order. Periodic presence (absence) of splitting of excitonic peaks in photocapacitance spectra even demonstrate collective coupling (decoupling) between energy levels of the quantum well and quantum dots with applied biases, which can potentially be used for quantum gate operations. All these observations point to experimental control of macroscopically large, quantum state of a two-component Bose-Einstein condensate of excitons in this quantum dot - quantum well heterostructure. Therefore, in principle, millions of two-level excitonic qubits can be intertwined to fabricate large quantum registers using such hybrid heterostructure by controlling the local electric fields and also by varying photoexcitation intensities of overlap** light spots.
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Submitted 19 June, 2023; v1 submitted 28 July, 2021;
originally announced July 2021.
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Phase Coherent Oscillations of Excitonic Photocapacitance and Bose-Einstein Condensation in Quantum Coupled 0D-2D Heterostructure
Authors:
Amit Bhunia,
Mohit Kumar Singh,
Maryam Al Huwayz,
Mohamed Henini,
Shouvik Datta
Abstract:
We report quantum coherent oscillations of photocapacitance of a double-barrier resonant tunneling heterostructure with bias at 10 K. Periodic presence and absence of sharp excitonic transitions in photocapacitance spectra with increasing bias demonstrate strong coupling between InAs quantum dots (0D) and triangular GaAs quantum well (2D). Coherent resonant tunneling in this 0D-2D heterostructure…
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We report quantum coherent oscillations of photocapacitance of a double-barrier resonant tunneling heterostructure with bias at 10 K. Periodic presence and absence of sharp excitonic transitions in photocapacitance spectra with increasing bias demonstrate strong coupling between InAs quantum dots (0D) and triangular GaAs quantum well (2D). Coherent resonant tunneling in this 0D-2D heterostructure establishes the momentum space narrowing of excitonic Bose-Einstein Condensation. Drastic increase of indirect exciton densities below 70 K reveal that excitonic wave functions anchored with each InAs quantum dots can laterally overlap across wide region around 200 micron to create a macroscopic quantum state of excitonic Bose-Einstein condensate. This itself points out the difficulties encountered in the usual 2D-2D bilayers and coupled quantum well samples used earlier to study excitonic BEC. Finally, we predict how coupled quantum-dots and quantum-well heterostructures can display excitonic Bose-Einstein condensation at even higher temperatures.
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Submitted 9 September, 2020; v1 submitted 23 October, 2019;
originally announced October 2019.
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Experimental evidences of trions and Fermi edge singularity in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance spectroscopy
Authors:
Amit Bhunia,
Mohit Kumar Singh,
Y. Galvao Gobato,
Mohamed Henini,
Shouvik Datta
Abstract:
In this paper, we show how photocapacitance spectra can probe two dimensional excitonic complexes and Fermi edge singularity as a function of applied bias around 100 K. In lower density regimes (<1x1011cm^-2), the appearance of two distinct peaks in the spectra are identified as a signature of coexistence of both excitons and positively charged trions. We estimate the binding energy of these trion…
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In this paper, we show how photocapacitance spectra can probe two dimensional excitonic complexes and Fermi edge singularity as a function of applied bias around 100 K. In lower density regimes (<1x1011cm^-2), the appearance of two distinct peaks in the spectra are identified as a signature of coexistence of both excitons and positively charged trions. We estimate the binding energy of these trions as ~2.0 meV. In the higher density regimes (>1x10^11 cm^-2), we observe a sharp spectral transition from trions to asymmetric shaped Fermi edge singularity in the photocapacitance spectra around a particular reverse bias. However, these signatures are absent from the photoluminescence spectra measured under identical circumstances. Such dissimilarities clearly point out that different many body physics govern these two spectral measurements. We also argue why such quantum confined dipoles of spatially indirect trions can have thermodynamically finite probability to survive even around 100 K. Finally, our observations demonstrate that photocapacitance technique, which was seldom used to detect trions in the past, can also be useful to detect the traces of these spatially indirect excitonic complexes as well as Fermi edge singularity even at 100 K. This is mainly due to enhanced sensitivity of such dielectric measurements to dipolar changes within such heterojunction.
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Submitted 17 March, 2018;
originally announced March 2018.
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Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature
Authors:
Amit Bhunia,
Mohit Kumar Singh,
Y. Galvao Gobato,
Mohamed Henini,
Shouvik Datta
Abstract:
We investigated excitonic absorptions in GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room temperature. Photocapacitance spectra show well defined resonance peak of indirect excitons formed around the Gamma-AlAs barrier. Unlike DC-photocurrent spectra, frequency dependent photocapacitance spectra interestingly red shift, sharpen up an…
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We investigated excitonic absorptions in GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room temperature. Photocapacitance spectra show well defined resonance peak of indirect excitons formed around the Gamma-AlAs barrier. Unlike DC-photocurrent spectra, frequency dependent photocapacitance spectra interestingly red shift, sharpen up and then decrease with increasing tunneling at higher biases. Such dissimilarities clearly point out that different exciton dynamics govern these two spectral measurements. We also argue why such quantum confined dipoles of indirect excitons can have thermodynamically finite probabilities to survive even at room temperature. Finally, our observations demonstrate that photocapacitance technique, which was seldom used to detect excitons in the past, is useful for selective detection and experimental tuning of relatively small numbers (~10^11/cm2) of photo-generated indirect excitons having large effective dipole moments in this type of quasi-two dimensional heterostructures.
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Submitted 1 February, 2018; v1 submitted 19 May, 2017;
originally announced May 2017.
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Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures
Authors:
Amit Bhunia,
Kanika Bansal,
Mohamed Henini,
Marzook S. Alshammari,
Shouvik Datta
Abstract:
Mostly, optical spectroscopies are used to investigate the physics of excitons, whereas their electrical evidences are hardly explored. Here, we examined a forward bias activated differential capacitance response of GaInP-AlGaInP based multi-quantum well laser diodes to trace the presence of excitons using electrical measurements. Occurrence of negative activation energy after light emission is un…
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Mostly, optical spectroscopies are used to investigate the physics of excitons, whereas their electrical evidences are hardly explored. Here, we examined a forward bias activated differential capacitance response of GaInP-AlGaInP based multi-quantum well laser diodes to trace the presence of excitons using electrical measurements. Occurrence of negative activation energy after light emission is understood as thermodynamical signature of steady state excitonic population under intermediate range of carrier injections. Similar corroborative results are also observed in an InGaAs-GaAs quantum dot laser structure grown by molecular beam epitaxy. With increasing biases, the measured differential capacitance response slowly vanishes. This represents gradual Mott transition of an excitonic phase into an electron-hole plasma in a GaInP-AlGaInP laser diode. This is further substantiated by more and more exponentially looking shapes of high energy tails in electroluminescence spectra with increasing forward bias, which originates from a growing non-degenerate population of free electrons and holes. Such an experimental correlation between electrical and optical properties of excitons can be used to advance the next generation excitonic devices.
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Submitted 20 October, 2016;
originally announced October 2016.
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Dynamic frequency dependence of bias activated negative capacitance in semiconductor diodes under high forward bias
Authors:
Kanika Bansal,
Mohamed Henini,
Marzook S. Alshammari,
Shouvik Datta
Abstract:
We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and non-luminescent Si-based diodes. Using the technique of bias-activated differential capacitance response, we investigated the mutual dynamics of different rate process…
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We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and non-luminescent Si-based diodes. Using the technique of bias-activated differential capacitance response, we investigated the mutual dynamics of different rate processes in different diodes. We explain these observations as the mutual competition of fast and slow electronic transition rates albeit differently. This study provides a better understanding of the physics of junction diodes operating under high charge carrier injection and may lead to superior device functionalities.
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Submitted 18 June, 2014;
originally announced June 2014.
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Fine structure of phonon replicas in a tunnel spectrum of a GaAs quantum well
Authors:
V. G. Krishtop,
V. G. Popov,
M. Henini,
Yu. Krupko,
J. -C. Portal
Abstract:
A fine structure of phonon replicas in the current-voltage characteristic of a resonant-tunneling diode has been investigated experimentally. A detailed study of the diode I-V curves in magnetic fields of different orientations has allowed to determine the origin of the features in the fine structure. The voltage positions of the features are shown to coincide with calculated that in the frame of…
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A fine structure of phonon replicas in the current-voltage characteristic of a resonant-tunneling diode has been investigated experimentally. A detailed study of the diode I-V curves in magnetic fields of different orientations has allowed to determine the origin of the features in the fine structure. The voltage positions of the features are shown to coincide with calculated that in the frame of two models: LO-phonon assisted tunneling and resonant tunneling of polarons.
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Submitted 2 February, 2014;
originally announced February 2014.
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Dispersive line shape in the vicinity of the ν = 1 quantum Hall state: Coexistence of Knight shifted and unshifted resistively detected NMR responses
Authors:
W. Desrat,
B. A. Piot,
S. Krämer,
D. K. Maude,
Z. R. Wasilewski,
M. Henini,
R. Airey
Abstract:
The frequency splitting between the dip and the peak of the resistively detected nuclear magnetic resonance (RDNMR) dispersive line shape (DLS) has been measured in the quantum Hall effect regime as a function of filling factor, carrier density and nuclear isotope. The splitting increases as the filling factor tends to ν = 1 and is proportional to the hyperfine coupling, similar to the usual Knigh…
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The frequency splitting between the dip and the peak of the resistively detected nuclear magnetic resonance (RDNMR) dispersive line shape (DLS) has been measured in the quantum Hall effect regime as a function of filling factor, carrier density and nuclear isotope. The splitting increases as the filling factor tends to ν = 1 and is proportional to the hyperfine coupling, similar to the usual Knight shift versus ν-dependence. The peak frequency shifts linearly with magnetic field throughout the studied filling factor range and matches the unshifted substrate signal, detected by classical NMR. Thus, the evolution of the splitting is entirely due to the changing Knight shift of the dip feature. The nuclear spin relaxation time, T1, is extremely long (hours) at precisely the peak frequency. These results are consistent with the local formation of a ν = 2 phase due to the existence of spin singlet D$^-$ complexes.
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Submitted 18 December, 2013;
originally announced December 2013.
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Classical percolation fingerprints in the high-temperature regime of the integer quantum Hall effect
Authors:
M. Flöser,
B. A. Piot,
C. L. Campbell,
D. K. Maude,
M. Henini,
R. Airey,
Z. R. Wasilewski,
S. Florens,
T. Champel
Abstract:
We have performed magnetotransport experiments in the high-temperature regime (up to 50 K) of the integer quantum Hall effect for two-dimensional electron gases in semiconducting heterostructures. While the magnetic field dependence of the classical Hall law presents no anomaly at high temperatures, we find a breakdown of the Drude-Lorentz law for the longitudinal conductance beyond a crossover ma…
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We have performed magnetotransport experiments in the high-temperature regime (up to 50 K) of the integer quantum Hall effect for two-dimensional electron gases in semiconducting heterostructures. While the magnetic field dependence of the classical Hall law presents no anomaly at high temperatures, we find a breakdown of the Drude-Lorentz law for the longitudinal conductance beyond a crossover magnetic field B_c ~ 1 T, which turns out to be correlated with the onset of the integer quantum Hall effect at low temperatures. We show that the high magnetic field regime at B > B_c can be understood in terms of classical percolative transport in a smooth disordered potential. From the temperature dependence of the peak longitudinal conductance, we extract scaling exponents which are in good agreement with the theoretically expected values. We also prove that inelastic scattering on phonons is responsible for dissipation in a wide temperature range going from 1 to 50 K at high magnetic fields.
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Submitted 22 August, 2013; v1 submitted 10 December, 2012;
originally announced December 2012.
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Real-space imaging of quantum Hall effect edge strips
Authors:
M. E. Suddards,
A. Baumgartner,
M. Henini,
C. J. Mellor
Abstract:
We use dynamic scanning capacitance microscopy (DSCM) to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to the complex local conductance, Gts, between a sharp metallic tip scanned across the sample surface and ground, comprising the complex sample conductance. Near int…
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We use dynamic scanning capacitance microscopy (DSCM) to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to the complex local conductance, Gts, between a sharp metallic tip scanned across the sample surface and ground, comprising the complex sample conductance. Near integer filling factors we observe a bright stripe along the sample edge in the imaginary part of Gts. The simultaneously recorded real part exhibits a sharp peak at the boundary between the sample interior and the stripe observed in the imaginary part. The features are periodic in the inverse magnetic field and consistent with compressible and incompressible strips forming at the sample edge. For currents larger than the critical current of the QHE break-down the stripes vanish sharply and a homogeneous signal is recovered, similar to zero magnetic field. Our experiments directly illustrate the formation and a variety of properties of the conceptually important QHE edge states at the physical edge of a 2DEG.
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Submitted 15 February, 2012;
originally announced February 2012.
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Spin-orbit fields in asymmetric (001) quantum wells
Authors:
P. S. Eldridge,
J. Hübner,
S. Oertel,
R. T. Harley,
M. Henini,
M. Oestreich
Abstract:
We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conduction…
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We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conduction band potential gradients which break the inversion symmetry. The negligible Rashba coefficient is a consequence of the 'isomorphism' of conduction and valence band potentials in quantum systems where the asymmetry is solely produced by alloy variations.
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Submitted 11 October, 2010;
originally announced October 2010.
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Optical imaging of resonant electrical carrier injection into individual quantum dots
Authors:
A. Baumgartner,
E. Stock,
A. Patanè,
L. Eaves,
M. Henini,
D. Bimberg
Abstract:
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompani…
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We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompanied by a spatial fragmentation of the surface EL emission into small and discrete light- emitting areas, each with its own spectral fingerprint and Stark shift. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential resonant tunneling paths for carriers.
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Submitted 16 July, 2010;
originally announced July 2010.
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Absence of the Rashba effect in undoped asymmetric quantum wells
Authors:
P. S. Eldridge,
W. J. H Leyland,
J. D. Mar,
P. G. Lagoudakis,
R. Winkler,
O. Z. Karimov,
M. Henini,
D Taylor,
R. T. Phillips,
R T Harley
Abstract:
To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead…
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To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead to intense debate. For example, an externally applied field acting on the envelope of the electron wavefunction determined by the macroscopic potential, underestimates the experimentally observed spin-orbit field by many orders of magnitude while the Ehrenfest theorem suggests that it should actually be zero. Here we challenge, both experimentally and theoretically, the widely held belief that any inversion asymmetry of the macroscopic potential, not only electric field, will produce a significant spin-orbit field for electrons. This conclusion has far-reaching consequences for the design of spintronic devices while illuminating important fundamental physics.
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Submitted 30 July, 2008;
originally announced July 2008.
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Energy-Dependent Electron-Electron Scattering and Spin Dynamics in a Two Dimensional Electron Gas
Authors:
W. J. H. Leylanda,
R. T. Harley,
M. Henini,
A. J. Shields,
I. Farrer,
D. A. Ritchie
Abstract:
Measurements of spin dynamics of electrons in a degenerate two dimensional electron gas, where the Dyakonov-Perel mechanism is dominant, have been used to investigate the electron scattering time (tp*) as a function of energy near the Fermi energy. Close to the Fermi energy the spin evolution is oscillatory, indicating a quasi-collision-free regime of spin dynamics. As the energy is increased a…
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Measurements of spin dynamics of electrons in a degenerate two dimensional electron gas, where the Dyakonov-Perel mechanism is dominant, have been used to investigate the electron scattering time (tp*) as a function of energy near the Fermi energy. Close to the Fermi energy the spin evolution is oscillatory, indicating a quasi-collision-free regime of spin dynamics. As the energy is increased a transition to exponential, collision-dominated, spin decay occurs. The frequency and the value of tp* are extracted using a Monte Carlo simulation method. At the Fermi energy tp* is very close to the ensemble momentum relaxation time (tp) obtained from the electron mobility. For higher energies tp* falls quadratically, consistent with theoretical expectations for the onset of electron-electron scattering which is inhibited by the Pauli principle at the Fermi energy.
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Submitted 8 March, 2008;
originally announced March 2008.
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Non-radiative exciton energy transfer in hybrid organic-inorganic heterostructures
Authors:
S. Chanyawadee,
P. G. Lagoudakis,
R. T. Harley,
D. G. Lidzey,
M. Henini
Abstract:
Non-radiative optical energy transfer from a GaAs quantum well to a thin overlayer of an infrared organic semiconductor dye is unambiguously demonstrated. The dynamics of exciton transfer are studied in the time-domain using pump-probe spectroscopy at the donor site and fluorescence spectroscopy at the acceptor site. The effect is observed as simultaneous increase of the population decay rate at…
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Non-radiative optical energy transfer from a GaAs quantum well to a thin overlayer of an infrared organic semiconductor dye is unambiguously demonstrated. The dynamics of exciton transfer are studied in the time-domain using pump-probe spectroscopy at the donor site and fluorescence spectroscopy at the acceptor site. The effect is observed as simultaneous increase of the population decay rate at the donor and of the rise time of optical emission at the acceptor sites. The hybrid configuration under investigation provides an alternative non-radiative, non-contact pum** route to electrical carrier injection that overcomes the losses imposed by the associated low carrier mobility of organic emitters.
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Submitted 16 November, 2007;
originally announced November 2007.
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Temperature Dependence of Rashba Spin-orbit Coupling in Quantum Wells
Authors:
P. S. Eldridge,
W. J. H. Leyland,
P. G. Lagoudakis,
O. Z. Karimov,
M. Henini,
D. Taylor,
R. T. Phillips,
R. T. Harley
Abstract:
We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to disentangle the contributions to spin-orbit coupling from the structural inversion asymmetry (Rashba term) and the bulk inversion asymmetry. We observe an unexpected temperature dependence of the Ra…
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We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to disentangle the contributions to spin-orbit coupling from the structural inversion asymmetry (Rashba term) and the bulk inversion asymmetry. We observe an unexpected temperature dependence of the Rashba spin-orbit interaction strength that signifies the importance of the usually neglected higher-order terms of the Rashba coupling.
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Submitted 30 July, 2007;
originally announced July 2007.
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Oscillatory D'yakonov-Perel' spin dynamics in two dimensional electron gases
Authors:
W. J. H. Leyland,
R. T. Harley,
M. Henini,
D. Taylor,
A. J. Shields,
I. Farrer,
D. A. Ritchie
Abstract:
Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths ranging from 5 nm to 20 nm and 2DEG sheet densities from 1.75x1011cm-2 to 3.5x1011cm-2 the evolution of a small injected spin population is found to be a damped…
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Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths ranging from 5 nm to 20 nm and 2DEG sheet densities from 1.75x1011cm-2 to 3.5x1011cm-2 the evolution of a small injected spin population is found to be a damped oscillation rather than exponential relaxation, consistent with the quasi-collision-free regime of D'yakonov-Perel spin dynamics. A Monte Carlo simulation method is used to extract the spin-orbit-induced electron spin precession frequency |W(kF)| and electron momentum scattering time tp* at the Fermi wavevector. The spin decay time passes through a minimum at a temperature corresponding to the transition from collision-free to collision-dominated regimes and tp* is found to be close to the ensemble momentum scattering time tp obtained from Hall measurements of electron mobility. The values of |W(kF)| give the Dresselhaus (BIA) coefficient of spin-orbit interaction as a function of electron confinement energy in the quantum show, qualitatively, the behaviour expected from k.p theory.
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Submitted 27 July, 2007;
originally announced July 2007.
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Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors
Authors:
B. A. Piot,
D. K. Maude,
M. Henini,
Z. R. Wasilewski,
J. A. Gupta,
K. J. Friedland,
R. Hey,
K. H. Ploog,
U. Gennser,
A. Cavanna,
D. Mailly,
R. Airey,
G. Hill
Abstract:
In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet a…
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In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. The single-particle Zeeman energy is tuned through the application of an additional in-plane magnetic field. Both the evolution of the spin polarization of the system and the critical magnetic field for spin splitting are well described as a function of the tilt angle of the sample in the magnetic field.
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Submitted 1 May, 2007;
originally announced May 2007.
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Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot
Authors:
E. E. Vdovin,
Yu. N. Khanin,
O. Makarovsky,
A. Patane,
L. Eaves,
M. Henini,
C. J. Mellor,
K. A. Benedict,
R. Airey
Abstract:
We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the…
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We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.
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Submitted 23 March, 2007;
originally announced March 2007.
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Enhanced spin relaxation time due to electron-electron scattering in semiconductors
Authors:
W. J. H. Leyland,
G. H. John,
R. T. Harley,
M. M. Glazov,
E. L. Ivchenko,
D. A. Ritchie,
A. J. Shields,
M. Henini
Abstract:
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcit…
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We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin life-time with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the D'yakonov-Perel' spin relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.
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Submitted 21 October, 2006;
originally announced October 2006.
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Resonance-like piezoelectric electron-phonon interaction in layered structures
Authors:
B. A. Glavin,
V. A. Kochelap,
T. L. Linnik,
A. J. Kent,
N. M. Stanton,
M. Henini
Abstract:
We show that mismatch of the piezoelectric parameters between layers of multiple-quantum well structures leads to modification of the electron-phonon interaction. In particular, short-wavelength phonons propagating perpendicular to the layers with wavevector close to $2πn/d$, where $d$ is the period of the structure, induce a strong smoothly-varying component of the piezo-potential. As a result,…
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We show that mismatch of the piezoelectric parameters between layers of multiple-quantum well structures leads to modification of the electron-phonon interaction. In particular, short-wavelength phonons propagating perpendicular to the layers with wavevector close to $2πn/d$, where $d$ is the period of the structure, induce a strong smoothly-varying component of the piezo-potential. As a result, they interact efficiently with 2D electrons. It is shown, that this property leads to emission of collimated quasi-monochromatic beams of high-frequency acoustic phonons from hot electrons in multiple-quantum well structures. We argue that this effect is responsible for the recently reported monochromatic transverse phonon emission from optically excited GaAs/AlAs superlattices, and provide additional experimental evidences of this.
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Submitted 10 June, 2006;
originally announced June 2006.
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Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices
Authors:
H. B. de Carvalho,
M. J. S. P. Brasil,
V. Lopez-Richard,
I. Camps,
Y. Galvao Gobato,
G. E. Marques,
L. C. O. Dacal,
M. Henini,
L. Eaves,
G. Hill
Abstract:
We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under a…
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We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.
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Submitted 18 January, 2006;
originally announced January 2006.
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The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition
Authors:
B. A. Piot,
D. K. Maude,
M. Henini,
Z. R. Wasilewski,
K. J. Friedland,
R. Hey,
K. H. Ploog,
A. I. Toropov,
R. Airey,
G. Hill
Abstract:
Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to o…
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Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to observe spin splitting confirming that the appearance of spin splitting is a result of a competition between the disorder induced energy cost of flip** spins and the exchange energy gain associated with the polarized state. In this model, the single particle Zeeman energy plays no role, so that the appearance of this quantum Hall ferromagnet in the highest occupied Landau level can also be thought of as a magnetic field induced Stoner transition.
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Submitted 21 December, 2005;
originally announced December 2005.
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1/f noise in a dilute GaAs two-dimensional hole system in the insulating phase
Authors:
G. Deville,
R. Leturcq,
D. L'Hote,
R. Tourbot,
C. J. Mellor,
M. Henini
Abstract:
We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence of the resistance is either power-like or simply activated. The noise decreases when the temperature or the density increase. These results contradi…
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We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence of the resistance is either power-like or simply activated. The noise decreases when the temperature or the density increase. These results contradict the standard description of independent particles in the strong localization regime. On the contrary, they agree with the percolation picture suggested by higher density results. The physical nature of the system could be a mixture of a conducting and an insulating phase. We compare our results with those of composite thin films.
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Submitted 15 November, 2005;
originally announced November 2005.
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1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs
Authors:
G. Deville,
R. Leturcq,
D. L'Hote,
R. Tourbot,
C. J. Mellor,
M. Henini
Abstract:
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quantum wells, at densities below that of the metal-insulator transition (MIT) at zero magnetic field. Two techniques voltage and current fluctuations we…
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Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quantum wells, at densities below that of the metal-insulator transition (MIT) at zero magnetic field. Two techniques voltage and current fluctuations were used. The normalized noise power SR/R2 increases strongly when the hole density or the temperature are decreased. The temperature dependence is steeper at the lowest densities. This contradicts the predictions of the modulation approach in the strong localization hop** transport regime. The hypothesis of a second order phase transition or percolation transition at a density below that of the MIT is thus reinforced.
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Submitted 6 October, 2005;
originally announced October 2005.
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Spin splitting of X-related donor impurity states in an AlAs barrier
Authors:
E. E. Vdovin,
Yu. N. Khanin,
L. Eaves,
M. Henini,
G. Hill
Abstract:
We use magnetotunneling spectroscopy to observe the spin splitting of the ground state of an X-valley-related Si-donor impurity in an AlAs barrier. We determine the absolute magnitude of the effective Zeeman spin splitting factors of the impurity ground state to be g$_{I}$= 2.2 $\pm $ 0.1. We also investigate the spatial form of the electron wave function of the donor ground state, which is anis…
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We use magnetotunneling spectroscopy to observe the spin splitting of the ground state of an X-valley-related Si-donor impurity in an AlAs barrier. We determine the absolute magnitude of the effective Zeeman spin splitting factors of the impurity ground state to be g$_{I}$= 2.2 $\pm $ 0.1. We also investigate the spatial form of the electron wave function of the donor ground state, which is anisotropic in the growth plane.
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Submitted 10 February, 2005;
originally announced February 2005.
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Excited two-dimensional magnetopolaron states in quantum well of resonant tunnel junction
Authors:
D. Yu. Ivanov,
M. V. Chukalina,
E. G. Takhtamirov,
Yu. V. Dubrovskii,
L. Eaves,
V. A. Volkov,
E. E. Vdovin,
J. -C. Portal,
D. K. Maude,
M. Henini,
G. Hill
Abstract:
Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high Landau levels ($N=2\div7$) are found to be drastically renormalised near energies when the longitudinal optical-phonon ($\hbarω_{LO}$) and cyclotron energy ($\hbarω_{C}$) are satisfied condition…
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Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high Landau levels ($N=2\div7$) are found to be drastically renormalised near energies when the longitudinal optical-phonon ($\hbarω_{LO}$) and cyclotron energy ($\hbarω_{C}$) are satisfied condition $\hbarω_{LO}=m\hbarω_{C}$, where $m=1,2,3$. This renormalisation is attributed to formation of resonant magnetopolarons, i.e. mixing of high index Landau levels by strong interaction of electrons at Landau level states with LO-phonons.
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Submitted 13 January, 2005;
originally announced January 2005.
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Development of the tunnelling gap in disordered 2D electron system with magnetic field: observation of the soft-hard gap transition
Authors:
Yu. V. Dubrovskii,
V. A. Volkov,
L. Eaves,
E. E. Vdovin,
O. N. Makarovskii,
J. -C. Portal,
M. Henini,
G. Hill
Abstract:
Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic…
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Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic field the transition soft-hard gap has been observed, i.e. the TDOS vanishes in the finite energy window around Fermi level at B>13 T.
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Submitted 6 January, 2005; v1 submitted 5 January, 2005;
originally announced January 2005.
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Resistance noise scaling in a 2D system in GaAs
Authors:
R. Leturcq,
G. Deville,
D. L'Hote,
R. Tourbot,
C. J. Mellor,
M. Henini
Abstract:
The 1/f resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well has been measured on both sides of the 2D metal-insulator transition (MIT) at zero magnetic field (B=0), and deep in the insulating regime. The two measurement methods used are described: I or V fixed, and measurement of resp. V or I fluctuations. The normalized noise magnitude SR/R^2 increases st…
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The 1/f resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well has been measured on both sides of the 2D metal-insulator transition (MIT) at zero magnetic field (B=0), and deep in the insulating regime. The two measurement methods used are described: I or V fixed, and measurement of resp. V or I fluctuations. The normalized noise magnitude SR/R^2 increases strongly when the hole density is decreased, and its temperature (T) dependence goes from a slight increase with T at the largest densities, to a strong decrease at low density. We find that the noise magnitude scales with the resistance, SR /R^2 ~ R^2.4. Such a scaling is expected for a second order phase transition or a percolation transition. The possible presence of such a transition is investigated by studying the dependence of the conductivity as a function of the density. This dependence is consistent with a critical behavior close to a critical density p* lower than the usual MIT critical density pc.
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Submitted 3 December, 2004;
originally announced December 2004.
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Anisotropic magnetoresistance in a 2DEG in a quasi-random magnetic field
Authors:
A. W. Rushforth,
B. L. Gallagher,
P. C. Main,
A. C. Neumann,
M. Henini,
C. H. Marrows,
B. J. Hickey
Abstract:
We present magnetotransport results for a 2D electron gas (2DEG) subject to the quasi-random magnetic field produced by randomly positioned sub-micron Co dots deposited onto the surface of a GaAs/AlGaAs heterostructure. We observe strong local and non-local anisotropic magnetoresistance for external magnetic fields in the plane of the 2DEG. Monte-Carlo calculations confirm that this is due to th…
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We present magnetotransport results for a 2D electron gas (2DEG) subject to the quasi-random magnetic field produced by randomly positioned sub-micron Co dots deposited onto the surface of a GaAs/AlGaAs heterostructure. We observe strong local and non-local anisotropic magnetoresistance for external magnetic fields in the plane of the 2DEG. Monte-Carlo calculations confirm that this is due to the changing topology of the quasi-random magnetic field in which electrons are guided predominantly along contours of zero magnetic field.
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Submitted 22 August, 2003;
originally announced August 2003.
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High temperature gate control of quantum well spin memory
Authors:
O. Z. Karimov,
G. H. John,
R. T. Harley,
W. H. Lau,
M. E. Flatte,
M. Henini,
R. Airey
Abstract:
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field-independent below 20 kV cm-1 reflecting quantum well interfac…
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Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field-independent below 20 kV cm-1 reflecting quantum well interface asymmetry. The results indicate the achievability of voltage-gateable spin-memory time longer than 3 ns simultaneously with high electron mobility.
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Submitted 16 May, 2003;
originally announced May 2003.
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Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs
Authors:
R. Leturcq,
D. L'Hote,
R. Tourbot,
C. J. Mellor,
M. Henini
Abstract:
We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly when the hole density p_s is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p_s. The noise…
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We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly when the hole density p_s is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p_s. The noise scales with the resistance, $S_R/R^2 \sim R^{2.4}$, as for a second order phase transition such as a percolation transition. The p_s dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p* which is lower than the observed MIT critical density p_c.
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Submitted 13 February, 2003; v1 submitted 14 January, 2003;
originally announced January 2003.
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Measurements of the Composite Fermion masses from the spin polarization of 2-D electrons in the region $1<ν<2$
Authors:
R. Chughtai,
V. Zhitomirsky,
R. J. Nicholas,
M. Henini
Abstract:
Measurements of the reflectivity of a 2-D electron gas are used to deduce the polarization of the Composite Fermion hole system formed for Landau level occupancies in the regime 1<ν<2. The measurements are consistent with the formation of a mixed spin CF system and allow the density of states or `polarization' effective mass of the CF holes to be determined. The mass values at ν=3/2 are found to…
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Measurements of the reflectivity of a 2-D electron gas are used to deduce the polarization of the Composite Fermion hole system formed for Landau level occupancies in the regime 1<ν<2. The measurements are consistent with the formation of a mixed spin CF system and allow the density of states or `polarization' effective mass of the CF holes to be determined. The mass values at ν=3/2 are found to be ~1.9m_{e} for electron densities of 4.4 x 10^{11} cm^{-2}, which is significantly larger than those found from measurements of the energy gaps at finite values of effective magnetic field.
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Submitted 26 November, 2001;
originally announced November 2001.
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Spatial map** of the electron eigenfunctions in InAs self-assembled quantum dots by magnetotunneling
Authors:
E. E. Vdovin,
Yu. N. Khanin,
A. V. Veretennikov,
A. Levin,
A. Patane,
Yu. V. Dubrovskii,
L. Eaves,
P. C. Main,
M. Henini,
G. Hill
Abstract:
We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the elliptical symmetry of the ground state and the characteristic lobes of the higher energy states.
We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the elliptical symmetry of the ground state and the characteristic lobes of the higher energy states.
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Submitted 29 June, 2001;
originally announced June 2001.
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Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2
Authors:
J. G. S. Lok,
A. K. Geim,
B. Tieke,
J. C. Maan,
S. T. Stoddart,
R. J. Hyndman,
B. L. Gallagher,
M. Henini
Abstract:
We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is att…
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We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is attributed to presence of the theoretically predicted magnetic ordering at even integer filling factors which causes the formation of macroscopic spin-charge domains.
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Submitted 24 April, 1998; v1 submitted 23 April, 1998;
originally announced April 1998.
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Phonon Absorption at the Magneto-Roton Minimum in the Fractional Quantum Hall Effect
Authors:
CJ Mellor,
RH Eyles,
JE Digby,
AJ Kent,
KA Benedict,
LJ Challis,
M Henini,
CT Foxon,
JJ Harris
Abstract:
We have made the first phonon absorption measurements in the fractional quantum Hall régime. Experiments have been conducted on two samples which have similar electron densities but greatly differing mobilities. The energy gaps as measured by activation studies of the longitudinal resistance differ by a factor of two. Phonon absorption measurements give almost identical values for the energy gap…
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We have made the first phonon absorption measurements in the fractional quantum Hall régime. Experiments have been conducted on two samples which have similar electron densities but greatly differing mobilities. The energy gaps as measured by activation studies of the longitudinal resistance differ by a factor of two. Phonon absorption measurements give almost identical values for the energy gap demonstrating that the gap measured in this way is rather insensitive to disorder. The value of this gap is in agreement with the activation gap measured in the high mobility sample. Values obtained at $ν=2/3$ are in good agreement with theory.
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Submitted 10 August, 1994;
originally announced August 1994.
