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Characterisation and simulation of stitched CMOS strip sensors
Authors:
Naomi Davis,
Jan-Hendrik Arling,
Marta Baselga,
Leena Diehl,
Jochen Dingfelder,
Ingrid-Maria Gregor,
Marc Hauser,
Fabian Hügging,
Tomasz Hemperek,
Karl Jakobs,
Michael Karagounis,
Roland Koppenhöfer,
Kevin Kröninger,
Fabian Lex,
Ulrich Parzefall,
Arturo Rodriguez,
Birkan Sari,
Niels Sorgenfrei,
Simon Spannagel,
Dennis Sperlich,
Tianyang Wang,
Jens Weingarten,
Iveta Zatocilova
Abstract:
In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two dif…
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In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.
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Submitted 14 May, 2024;
originally announced May 2024.
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Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology
Authors:
Lars Schall,
Christian Bespin,
Ivan Caicedo,
Jochen Dingfelder,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Konstantinos Moustakas,
Heinz Pernegger,
Petra Riedler,
Walter Snoeys,
Norbert Wermes,
Sinuo Zhang
Abstract:
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted…
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Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development line designed in 180 nm TowerSemicondutor technology, which features a large scale (2 x 2) cm$^2$ chip divided into (512 x 512) pixels with a pitch of (33 x 33) um$^2$. All in-pixel electronics are separated from its small collection electrode and process modifications are implemented to improve charge collection efficiency especially after irradiation. The latest laboratory measurements and investigations of a threshold variation observed for TJ-Monopix2 in typical operating conditions are presented.
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Submitted 19 February, 2024;
originally announced February 2024.
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Breakdown Performance of Guard Ring Designs for Pixel Detectors in $150~\mathrm{nm}$ CMOS Technology
Authors:
Sinuo Zhang,
Ivan Caicedo,
Tomasz Hemperek,
Toko Hirono,
Jochen Dingfelder
Abstract:
Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the operation of detectors, the breakdown performance of pixel sensors constitutes the upper limit of the operating voltage. Six types of passive CMOS test structures were…
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Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the operation of detectors, the breakdown performance of pixel sensors constitutes the upper limit of the operating voltage. Six types of passive CMOS test structures were fabricated on high-resistivity wafers. Each of them features a combination of different inter-pixel designs and sets of floating guard rings, which differ from each other in the geometrical layout, implantation type, and overhang structure. A comparative study based on leakage current measurements in the sensor substrate of unirradiated samples was carried out to identify correlations between guard ring designs and breakdown voltages. TCAD simulations using the design parameters of the test structures were performed to discuss the observations and, together with the measurements, ultimately provide design features targeting higher breakdown voltages.
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Submitted 28 March, 2024; v1 submitted 24 October, 2023;
originally announced October 2023.
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Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors
Authors:
I. Zatocilova,
J. -H. Arling,
M. Baselga,
N. Davis,
L. Diehl,
J. Dingfelder,
I. -M. Gregor,
M. Hauser,
T. Hemperek,
F. Hügging,
K. Jakobs,
M. Karagounis,
K. Kröninger,
F. Lex,
U. Parzefall,
A. Rodriguez,
B. Sari,
N. Sorgenfrei,
S. Spannagel,
D. Sperlich,
T. Wang,
J. Weingarten
Abstract:
In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors w…
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In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors were tested in a probe station and characterised with a Sr90-source as well as laser-based edge- and top-TCT systems. Sensors were also simulated using Sentaurus TCAD. At last, detector modules were constructed from several sensors and thoroughly studied in two beam campaigns at DESY. All of these measurements were performed before and after irradiation. This contribution provides an overview of simulation results, summarises the laboratory measurements and in particular presents first test beam results for irradiated and unirradiated passive CMOS strip sensors. We are demonstrating that large area sensors with sufficient radiation hardness can be obtained by stitching during the CMOS process, and presenting our plans for the next submission in the framework of this project.
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Submitted 15 November, 2023; v1 submitted 28 September, 2023;
originally announced September 2023.
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MiniCACTUS: A 65 ps Time Resolution Depleted Monolithic CMOS Sensor
Authors:
Yavuz Degerli,
Fabrice Guilloux,
Tomasz Hemperek,
Jean-Pierre Meyer,
Philippe Schwemling
Abstract:
MiniCACTUS is a monolithic sensor prototype optimised for timing measurement of charged particles. It has been designed in a standard 150 nm CMOS process without dedicated amplification layer. It is intended as a demonstrator chip for future large scale timing detectors, like upgrades of timing detectors at LHC, or future high energy physics detector projects. The sensor features an active array o…
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MiniCACTUS is a monolithic sensor prototype optimised for timing measurement of charged particles. It has been designed in a standard 150 nm CMOS process without dedicated amplification layer. It is intended as a demonstrator chip for future large scale timing detectors, like upgrades of timing detectors at LHC, or future high energy physics detector projects. The sensor features an active array of 2 x 4 diodes, analog and digital Front-Ends (FEs), a slow control interface, and bias circuitry programmable through internal DACs. The sensing element is a deep n-well/p-substrate diode. Thanks to the optimized guard-rings surrounding the whole chip, it is possible to apply safely more than 450 V on the high-resistivity substrate allowing fast charge collection. The baseline pixel dimensions are 1.0 mm x 1.0 mm and 0.5 mm x 1.0 mm. The analog FEs and the discriminators for each pixel are implemented outside the pixel, at the column level. The power consumption is approximately 300 mW/cm$\mathbf {^2}$, which is compatible with cooling infrastructure available at LHC experiments, and making integration of this concept viable in future high energy physics experiments. After fabrication, the sensors have been thinned to 100 $μ$m, 200 $μ$m and 300 $μ$m total thickness and then post-processed for backside biasing. The time resolution of several sensors with different thicknesses has been measured in 3 test-beam campaigns using high energy muons (Minimum Ionizing Particles) at CERN SPS in 2021 and 2022. A resolution of 65.3 ps has been measured with on-chip FE and discriminator. This paper will focus on the results of these test-beam campaigns.
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Submitted 15 September, 2023;
originally announced September 2023.
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Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology
Authors:
Christian Bespin,
Ivan Caicedo,
Jochen Dingfelder,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Konstantinos Moustakas,
Heinz Pernegger,
Petra Riedler,
Lars Schall,
Walter Snoeys,
Norbert Wermes
Abstract:
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, fe…
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Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$\,$cm x 2$\,$cm matrix consisting of 512 x 512 pixels with 33.04$\,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15}\,1\,$MeV n$_\text{eq}\,$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency.
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Submitted 31 January, 2023;
originally announced January 2023.
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Characterization of Passive CMOS Strip Sensors
Authors:
Leena Diehl,
Marta Baselga,
Ingrid Maria Gregor,
Marc Hauser,
Tomasz Hemperek,
Jan Cedric Hönig,
Karl Jakobs,
Sven Mägdefessel,
Ulrich Parzefall,
Arturo Rodriguez,
Surabhi Sharma,
Dennis Sperlich,
Liv Wiik-Fuchs,
Tianyang Wang
Abstract:
Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are…
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Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measurements with a 90Sr source and a laser with infrared wavelength showed no effect of the stitching process on the performance of the sensor.
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Submitted 1 April, 2022;
originally announced April 2022.
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Characterization of passive CMOS sensors with RD53A pixel modules
Authors:
Franz Glessgen,
Malte Backhaus,
Florencia Canelli,
Yannick Manuel Dieter,
Jochen Christian Dingfelder,
Tomasz Hemperek,
Fabian Huegging,
Arash Jofrehei,
Weijie **,
Ben Kilminster,
Anna Macchiolo,
Daniel Muenstermann,
David-Leon Pohl,
Branislav Ristic,
Rainer Wallny,
Tianyang Wang,
Norbert Wermes,
Pascal Wolf
Abstract:
Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS fou…
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Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS foundries to the HEP community, which would be most beneficial in terms of availability, throughput and cost. In addition, the availability of multi-layer routing of signals will provide the freedom to optimize the sensor geometry and the performance, with biasing structures implemented in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototy** production of strip test structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150nm CMOS process. This presentation will focus on the characterization of pixel modules, studying the performance in terms of charge collection, position resolution and hit efficiency with measurements performed in the laboratory and with beam tests. We will report on the investigation of RD53A modules with 25x100 mu^2 cell geometry.
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Submitted 15 November, 2021;
originally announced November 2021.
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Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip
Authors:
Yannick Dieter,
Michael Daas,
Jochen Dingfelder,
Tomasz Hemperek,
Fabian Hügging,
Jens Janssen,
Hans Krüger,
David-Leon Pohl,
Marco Vogt,
Tianyang Wang,
Norbert Wermes,
Pascal Wolf
Abstract:
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sens…
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The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 $\mathrmμ$m thin passive CMOS sensor with a pixel pitch of 50 $\mathrmμ$m at different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ and 1 $\times$ 10$^{16}$n$_{\mathrm{eq}}$cm$^{-2}$, is presented. The sensor was bump-bonded and read out using the RD53A readout chip. After the highest fluence a hit-detection efficiency larger than 99% is measured for minimum ionising particles. The measured equivalent noise charge is comparable to conventional planar pixel sensors. Passive CMOS sensors are thus an attractive option for silicon detectors operating in radiation harsh environments like the upgrades for the LHC experiments.
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Submitted 9 May, 2021;
originally announced May 2021.
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DMAPS Monopix developments in large and small electrode designs
Authors:
Christian Bespin,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Leyre Flores Sanz de Acedo,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Cesar Augusto Marin Tobon,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
Francesco Piro,
Petra Riedler
, et al. (8 additional authors not shown)
Abstract:
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows…
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LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.
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Submitted 9 July, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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BDAQ53, a versatile pixel detector readout and test system for the ATLAS and CMS HL-LHC upgrades
Authors:
Michael Daas,
Yannick Dieter,
Jochen Dingfelder,
Markus Frohne,
Georgios Giakoustidis,
Tomasz Hemperek,
Florian Hinterkeuser,
Fabian Hügging,
Jens Janssen,
Hans Krüger,
David-Leon Pohl,
Piotr Rymaszewski,
Mark Standke,
Tianyang Wang,
Marco Vogt,
Norbert Wermes
Abstract:
BDAQ53 is a readout system and verification framework for hybrid pixel detector readout chips of the RD53 family. These chips are designed for the upgrade of the inner tracking detectors of the ATLAS and CMS experiments. BDAQ53 is used in applications where versatility and rapid customization are required, such as in laboratory testing environments, test beam campaigns, and permanent setups for qu…
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BDAQ53 is a readout system and verification framework for hybrid pixel detector readout chips of the RD53 family. These chips are designed for the upgrade of the inner tracking detectors of the ATLAS and CMS experiments. BDAQ53 is used in applications where versatility and rapid customization are required, such as in laboratory testing environments, test beam campaigns, and permanent setups for quality control measurements. It consists of custom and commercial hardware, a Python-based software framework, and FPGA firmware. BDAQ53 is developed as open source software with both software and firmware being hosted in a public repository.
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Submitted 5 October, 2020; v1 submitted 22 May, 2020;
originally announced May 2020.
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Measurements of Single Event Upset in ATLAS IBL
Authors:
G. Balbi,
M. Barbero,
R. Beccherle,
M. Bindi,
P. Breugnon,
P. Butti,
D. Cinca,
J. Dickinson,
D. Ferrere,
D. Fougeron,
M. Garcia-Sciveres,
J. Garcia Pascual,
A. Gaudiello,
C. Gemme,
N. Giangiacomi,
T. Hemperek,
L. Jeanty,
O. Kepka,
M. Kocian,
K. Lantzsch,
P. Liu,
C. Martin,
A. Mekkaoui,
M. Menouni,
K. Potamianos
, et al. (3 additional authors not shown)
Abstract:
Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulati…
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Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.
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Submitted 29 April, 2020;
originally announced April 2020.
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CACTUS: A depleted monolithic active timing sensor using a CMOS radiation hard technology
Authors:
Yavuz Degerli,
Fabrice Guilloux,
Claude Guyot,
Jean-Pierre Meyer,
Ahmimed Ouraou,
Philippe Schwemling,
Artur Apresyan,
Ryan E. Heller,
Mohd Meraj,
Christian Pena,
Si Xie,
Tomasz Hemperek
Abstract:
The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will…
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The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will also be of interest beyond the LHC and beyond high energy particle physics. We present in this paper the first developments towards a radiation hard Depleted Monolithic Active Pixel Sensor (DMAPS), with high-resolution time measurement capability. The technology chosen is a standard high voltage CMOS process, in conjunction with a high resistivity detector material, which has already proven to efficiently detect particles in tracking applications after several hundred of Mrad of irradiation.
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Submitted 6 May, 2020; v1 submitted 9 March, 2020;
originally announced March 2020.
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Improving the Spatial Resolution of Silicon Pixel Detectors through Sub-pixel Cross-coupling
Authors:
Sinuo Zhang,
David-Leon Pohl,
Tomasz Hemperek,
Jochen Dingfelder
Abstract:
We present a concept to improve the spatial resolution of silicon pixel-detectors via the implementation of a sub-pixel cross-coupling, which introduces directional charge sharing between pixels. The charge-collection electrode is segmented into sub-pixels and each sub-pixel is coupled to the closest sub-pixel of the neighboring pixel.
Such coupling schema is evaluated for a model sensor design…
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We present a concept to improve the spatial resolution of silicon pixel-detectors via the implementation of a sub-pixel cross-coupling, which introduces directional charge sharing between pixels. The charge-collection electrode is segmented into sub-pixels and each sub-pixel is coupled to the closest sub-pixel of the neighboring pixel.
Such coupling schema is evaluated for a model sensor design with $50 μm \times 50 μm$ pixels and AC-coupled sub-pixels. A first-order SPICE simulation is used, to determine feasible coupling strengths and assess the influence on the charge-collection efficiency. The impact of the coupling strength on spatial resolution is studied with a dedicated simulation, taking into account charge-cloud evolution, energy-loss straggling, electronic noise, and the charge detection-threshold. Using simplifying assumptions, such as perpendicular tracks and no gaps between charge-collection electrodes, an improvement of the spatial resolution by up to approximately $30\%$ is obtained in comparison to the standard planar pixel layout.
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Submitted 23 July, 2020; v1 submitted 4 December, 2019;
originally announced December 2019.
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Radiation hard DMAPS pixel sensors in 150nm CMOS technology for operation at LHC
Authors:
M. Barbero,
P. Barrillon,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
Z. Chen,
Y. Degerli,
J. Dingfelder,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
F. Hügging,
H. Krüger,
K. Moustakas,
A. Ouraou,
P. Pangaud,
I. Peric,
D-L. Pohl,
P. Rymaszewski,
P. Schwemling,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We develop…
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Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least $10^{15}~\mathrm{n_{eq}/cm^2}$ and total ionization doses of at least 50 Mrad.
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Submitted 25 May, 2020; v1 submitted 4 November, 2019;
originally announced November 2019.
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Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
Authors:
M. Dyndal,
V. Dao,
P. Allport,
I. Asensi Tortajada,
M. Barbero,
S. Bhat,
D. Bortoletto,
I. Berdalovic,
C. Bespin,
C. Buttar,
I. Caicedo,
R. Cardella,
F. Dachs,
Y. Degerli,
H. Denizli,
L. Flores Sanz de Acedo,
P. Freeman,
L. Gonella,
A. Habib,
T. Hemperek,
T. Hirono,
B. Hiti,
T. Kugathasan,
I. Mandić,
D. Maneuski
, et al. (19 additional authors not shown)
Abstract:
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silico…
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Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$.
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Submitted 14 December, 2019; v1 submitted 26 September, 2019;
originally announced September 2019.
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The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade
Authors:
Ivan Caicedo,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Christian Bespin,
Patrick Breugnon,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
David-Leon Pohl,
Petra Riedler,
Alexandre Rozanov,
Piotr Rymaszewski
, et al. (5 additional authors not shown)
Abstract:
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>…
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Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed.
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Submitted 25 April, 2019; v1 submitted 10 February, 2019;
originally announced February 2019.
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Compact, directional neutron detectors capable of high-resolution nuclear recoil imaging
Authors:
I. Jaegle,
P. M. Lewis,
M. Garcia-Sciveres,
M. T. Hedges,
T. Hemperek,
J. Janssen,
Q. Ji,
D. -L. Pohl,
S. Ross,
J. Schueler,
I. Seong,
T. N. Thorpe,
S. E. Vahsen
Abstract:
We report on the design, production, and performance of compact 40-cm$^3$ Time Projection Chambers (TPCs) that detect fast neutrons by measuring the three-dimensional (3D) ionization distribution of nuclear recoils in $^4$He:CO$_2$ gas at atmospheric pressure. We use these detectors to characterize the fast-neutron flux inside the Belle II detector at the SuperKEKB electron-positron collider in Ts…
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We report on the design, production, and performance of compact 40-cm$^3$ Time Projection Chambers (TPCs) that detect fast neutrons by measuring the three-dimensional (3D) ionization distribution of nuclear recoils in $^4$He:CO$_2$ gas at atmospheric pressure. We use these detectors to characterize the fast-neutron flux inside the Belle II detector at the SuperKEKB electron-positron collider in Tsukuba, Japan, where the primary design constraint is a small form factor. We find that the TPCs meet or exceed all design specifications, and are capable of measuring the 3D surface shape and charge density profile of ionization clouds from nuclear recoils and charged tracks in exquisite detail. Scaled-up detectors based on the detection principle demonstrated here may be suitable for directional dark matter searches, measurements of coherent neutrino-nucleus scattering, and other experiments requiring precise detection of neutrons or nuclear recoils.
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Submitted 6 May, 2019; v1 submitted 20 January, 2019;
originally announced January 2019.
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CMOS Monolithic Pixel Sensors based on the Column-Drain Architecture for the HL-LHC Upgrade
Authors:
K. Moustakas,
M. Barbero,
I. Berdalovic,
C. Bespin,
P. Breugnon,
I. Caicedo,
R. Cardella,
Y. Degerli,
N. Egidos Plaja,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krueger,
T. Kugathasan,
C. A. Marin Tobon,
P. Pangaud,
H. Pernegger,
E. J. Schioppa,
W. Snoeys,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based o…
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Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC).
LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of $50x250~μm^{2}$ and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99\% has been measured after irradiation to $1\cdot10^{15}~n_{eq}/cm^{2}$. TJ-Monopix is a large scale $(1x2~cm^{2})$ prototype featuring pixels of $36x40~μm^{2}$ size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance ($<=3~fF$) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) $\approx11e^{-}$, threshold $\approx300~e^-$, threshold dispersion $\approx30~e^-$ and total power consumption lower than $120~mW/cm^2$.
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Submitted 10 September, 2018;
originally announced September 2018.
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Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
Authors:
F. J. Iguaz,
F. Balli,
M. Barbero,
S. Bhat,
P. Breugnon,
I. Caicedo,
Z. Chen,
Y. Degerli,
S. Godiot,
F. Guilloux,
C. Guyot,
T. Hemperek,
T. Hirono,
H. Krüger,
J. P. Meyer,
A. Ouraou,
P. Pangaud,
P. Rymaszewski,
P. Schwemling,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating…
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This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pre-amplifier and discriminator flavors with an external injection signal and an iron source (5.9\,keV x-rays).
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Submitted 12 June, 2018;
originally announced June 2018.
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Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC
Authors:
Toko Hirono,
Marlon Barbero,
Pierre Barrillon,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Zongde Chen,
Michael Daas,
Yavuz Degerli,
Fabrice Guilloux,
Tomasz Hemperek,
Fabian Hugging,
Hans Kruger,
Patrick Pangaud,
Piotr Rymaszewski,
Philippe Schwemling,
Maxence Vandenbroucke,
Tianyang Wang,
Norbert Wermes
Abstract:
Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip s…
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Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is a fully monolithic DMAPS including fast readout digital logic that handles the required hit rate. In order to yield a strong homogeneous electric field within the sensor volume, thinning of the wafer was tested. The prototypes were irradiated with X-ray up to a total ionization dose (TID) of 50 Mrad and with neutrons up to non-ionizing energy loss (NIEL) of $10^{15}$ $n_{eq}/cm^2$. The analog readout circuitry maintained its performance after TID irradiation, and the hit-efficiency at > $10^7$ noise occupancy was as high as 98.9 % after NIEL irradiation.
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Submitted 25 March, 2018;
originally announced March 2018.
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Production and Integration of the ATLAS Insertable B-Layer
Authors:
B. Abbott,
J. Albert,
F. Alberti,
M. Alex,
G. Alimonti,
S. Alkire,
P. Allport,
S. Altenheiner,
L. Ancu,
E. Anderssen,
A. Andreani,
A. Andreazza,
B. Axen,
J. Arguin,
M. Backhaus,
G. Balbi,
J. Ballansat,
M. Barbero,
G. Barbier,
A. Bassalat,
R. Bates,
P. Baudin,
M. Battaglia,
T. Beau,
R. Beccherle
, et al. (352 additional authors not shown)
Abstract:
During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i…
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During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.
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Submitted 6 June, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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Charge collection properties of irradiated depleted CMOS pixel test structures
Authors:
I. Mandić,
V. Cindro,
A. Gorišek,
B. Hiti,
G. Kramberger,
M. Zavrtanik,
M. Mikuž,
T. Hemperek
Abstract:
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$Ω$cm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Two sets of devices were investigated: unthinned (700 $μ$m) with substrate biased through…
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Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$Ω$cm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Two sets of devices were investigated: unthinned (700 $μ$m) with substrate biased through the implant on top and thinned (200 $μ$m) with processed and metallised back plane.
Depleted depth was estimated with Edge-TCT and collected charge was measured with $^{90}$Sr source using an external amplifier with 25 ns sha** time. Depleted depth at given bias voltage decreased with increasing neutron fluence but it was still larger than 70 $μ$m at 250 V after the highest fluence. After irradiation much higher collected charge was measured with thinned detectors with processed back plane although the same depleted depth was observed with Edge-TCT. Most probable value of collected charge of over 5000 electrons was measured also after irradiation to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. This is sufficient to ensure successful operation of these detectors at the outer layer of the pixel detector in the ATLAS experiment at the upgraded HL-LHC.
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Submitted 22 January, 2018; v1 submitted 11 January, 2018;
originally announced January 2018.
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Characterization and Verification Environment for the RD53A Pixel Readout Chip in 65 nm CMOS
Authors:
Marco Vogt,
Hans Krüger,
Tomasz Hemperek,
Jens Janssen,
David Leon Pohl,
Michael Daas
Abstract:
The RD53 collaboration is currently designing a large scale prototype pixel readout chip in 65 nm CMOS technology for the phase 2 upgrades at the HL-LHC. The RD53A chip will be available by the end of the year 2017 and will be extensively tested to confirm if the circuit and the architecture make a solid foundation for the final pixel readout chips for the experiments at the HL-LHC. A test and dat…
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The RD53 collaboration is currently designing a large scale prototype pixel readout chip in 65 nm CMOS technology for the phase 2 upgrades at the HL-LHC. The RD53A chip will be available by the end of the year 2017 and will be extensively tested to confirm if the circuit and the architecture make a solid foundation for the final pixel readout chips for the experiments at the HL-LHC. A test and data acquisition system for the RD53A chip is currently under development to perform single-chip and multi-chip module measurements. In addition, the verification of the RD53A design is performed in a dedicated simulation environment. The concept and the implementation of the test and data acquisition system and the simulation environment, which are based on a modular data acquisition and system testing framework, are presented in this work.
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Submitted 1 February, 2018; v1 submitted 8 November, 2017;
originally announced November 2017.
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Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
Authors:
Piotr Rymaszewski,
Marlon Barbero,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Zongde Chen,
Yavuz Degerli,
Stephanie Godiot,
Fabrice Guilloux,
Claude Guyot,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Mohamed Lachkar,
Patrick Pangaud,
Alexandre Rozanov,
Philippe Schwemling,
Maxence Vandenbroucke,
Tianyang Wang,
Norbert Wermes
Abstract:
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a…
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This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a device in the detector module will result in a lower production cost and lower material budget compared to the presently used hybrid designs. In this paper the chip architecture will be described followed by the simulation and measurement results.
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Submitted 15 November, 2017; v1 submitted 3 November, 2017;
originally announced November 2017.
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Study of prototypes of LFoundry active and monolithic CMOS pixels sensors for the ATLAS detector
Authors:
L. Vigani,
D. Bortoletto,
L. Ambroz,
R. Plackett,
T. Hemperek,
P. Rymaszewski,
T. Wang,
H. Krueger,
T. Hirono,
I. Caicedo Sierra,
N. Wermes,
M. Barbero,
S. Bhat,
P. Breugnon,
Z. Chen,
S. Godiot,
P. Pangaud,
A. Rozanov
Abstract:
High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which could achieve similar performances at lower cost of production and complexity. We present recen…
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High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which could achieve similar performances at lower cost of production and complexity. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, and the first fully monolithic prototype MONOPIX will be shown.
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Submitted 18 October, 2017;
originally announced October 2017.
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Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade
Authors:
T. Wang,
M. Barbero,
I. Berdalovic,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
R. Cardella,
Z. Chen,
Y. Degerli,
N. Egidos,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krüger,
T. Kugathasan,
F. Hügging,
C. A. Marin Tobon,
K. Moustakas,
P. Pangaud,
P. Schwemling,
H. Pernegger,
D-L. Pohl,
A. Rozanov
, et al. (3 additional authors not shown)
Abstract:
Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being develo…
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Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown.
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Submitted 29 September, 2017;
originally announced October 2017.
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Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line
Authors:
D. -L. Pohl,
T. Hemperek,
I. Caicedo,
L. Gonella,
F. Hügging,
J. Janssen,
H. Krüger,
A. Macchiolo,
N. Owtscharenko,
L. Vigani,
N. Wermes
Abstract:
Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-…
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Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 $\times$ 10$^{15}$ n$_{\rm eq}$ cm$^{-2}$. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.
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Submitted 2 March, 2017; v1 submitted 16 February, 2017;
originally announced February 2017.
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Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process
Authors:
B. Hiti,
V. Cindro,
A. Gorišek,
T. Hemperek,
T. Kishishita,
G. Kramberger,
H. Krüger,
I. Mandić,
M. Mikuž,
N. Wermes,
M. Zavrtanik
Abstract:
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiat…
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Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1x10e16 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5x10e14 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The results were backed by a numerical simulation of charge collection in an equivalent detector layout.
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Submitted 26 October, 2017; v1 submitted 23 January, 2017;
originally announced January 2017.
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Neutron irradiation test of depleted CMOS pixel detector prototypes
Authors:
Igor Mandić,
Vladimir Cindro,
Andrej Gorišek,
Bojan Hiti,
Gregor Kramberger,
Marko Mikuž,
Marko Zavrtanik,
Tomasz Hemperek,
Michael Daas,
Fabian Hügging,
Hans Krügerc,
David-Leon Pohl,
Norbert Wermes,
Laura Gonella
Abstract:
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$Ω$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive d…
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Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$Ω$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1$\cdot$10$^{13}$ n/cm$^{2}$ and 5$\cdot$10$^{13}$ n/cm$^{2}$ and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1$\cdot$10$^{15}$ n/cm$^{2}$ is more than 50 $μ$m at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments.
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Submitted 18 January, 2017;
originally announced January 2017.
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Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment
Authors:
Toko Hirono,
Marlon Barbero,
Patrick Breugnon,
Stéphanie Godiot,
Tomasz Hemperek,
Fabian Hügging,
Jens Janssen,
Hans Krüger,
Jian Liu,
Patrick Pangaud,
Ivan Perić,
David-Leon Pohl,
Alexandre Rozanov,
Piotr Rymaszewski,
Norbert Wermes
Abstract:
Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS…
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Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS was fabricated in a 150nm CMOS process on a substrate with a resistivity of >2 kΩcm that was thinned to 100 μm. Full depletion occurs around 20V, which is far below the breakdown voltage of 110 V. A readout chip has been attached for fast triggered readout. Presented prototype also uses a concept of sub-pixel en/decoding three pixels of the prototype chip are readout by one pixel of the readout chip. Since radiation tolerance is one of the largest concerns in DMAPS, the CCPD_LF chip has been irradiated with X-rays and neutrons up to a total ionization dose of 50 Mrad and a fluence of 10E15neq/cm2, respectively.
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Submitted 9 December, 2016;
originally announced December 2016.
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Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
Authors:
T. Wang,
P. Rymaszewski,
M. Barbero,
Y. Degerli,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krüger,
J. Liu,
F. Orsini,
P. Pangaud,
A. Rozanov,
N. Wermes
Abstract:
The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exp…
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The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equip** the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.
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Submitted 3 November, 2016;
originally announced November 2016.
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Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade
Authors:
Piotr Rymaszewski,
Marlon Barbero,
Patrick Breugnon,
Stépahnie Godiot,
Laura Gonella,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Jian Liu,
Patrick Pangaud,
Ivan Peric,
Alexandre Rozanov,
Anqing Wang,
Norbert Wermes
Abstract:
The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prot…
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The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.
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Submitted 4 January, 2016;
originally announced January 2016.
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A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process
Authors:
Tomasz Hemperek,
Tetsuichi Kishishita,
Hans Krüger,
Norbert Wermes
Abstract:
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection laye…
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An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry witch mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.
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Submitted 23 February, 2015; v1 submitted 12 December, 2014;
originally announced December 2014.
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The RD53 Collaboration's SystemVerilog-UVM Simulation Framework and its General Applicability to Design of Advanced Pixel Readout Chips
Authors:
S. Marconi,
E. Conti,
P. Placidi,
J. Christiansen,
T. Hemperek
Abstract:
The foreseen Phase 2 pixel upgrades at the LHC have very challenging requirements for the design of hybrid pixel readout chips. A versatile pixel simulation platform is as an essential development tool for the design, verification and optimization of both the system architecture and the pixel chip building blocks (Intellectual Properties, IPs). This work is focused on the implemented simulation an…
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The foreseen Phase 2 pixel upgrades at the LHC have very challenging requirements for the design of hybrid pixel readout chips. A versatile pixel simulation platform is as an essential development tool for the design, verification and optimization of both the system architecture and the pixel chip building blocks (Intellectual Properties, IPs). This work is focused on the implemented simulation and verification environment named VEPIX53, built using the SystemVerilog language and the Universal Verification Methodology (UVM) class library in the framework of the RD53 Collaboration. The environment supports pixel chips at different levels of description: its reusable components feature the generation of different classes of parameterized input hits to the pixel matrix, monitoring of pixel chip inputs and outputs, conformity checks between predicted and actual outputs and collection of statistics on system performance. The environment has been tested performing a study of shared architectures of the trigger latency buffering section of pixel chips. A fully shared architecture and a distributed one have been described at behavioral level and simulated; the resulting memory occupancy statistics and hit loss rates have subsequently been compared.
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Submitted 14 August, 2014;
originally announced August 2014.
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A method for precise charge reconstruction with pixel detectors using binary hit information
Authors:
David-Leon Pohl,
Jens Janssen,
Tomasz Hemperek,
Fabian Hügging,
Norbert Wermes
Abstract:
A method is presented to precisely reconstruct charge spectra with pixel detectors using binary hit information of individual pixels. The method is independent of the charge information provided by the readout circuitry and has a resolution mainly limited by the electronic noise. It relies on the ability to change the detection threshold in small steps while counting hits from a particle source. T…
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A method is presented to precisely reconstruct charge spectra with pixel detectors using binary hit information of individual pixels. The method is independent of the charge information provided by the readout circuitry and has a resolution mainly limited by the electronic noise. It relies on the ability to change the detection threshold in small steps while counting hits from a particle source. The errors are addressed and the performance of the method is shown based on measurements with the ATLAS pixel chip FE-I4 bump bonded to a 230 μm 3D-silicon sensor. Charge spectra from radioactive sources and from electron beams are presented serving as examples. It is demonstrated that a charge resolution (σ<200 e) close to the electronic noise of the ATLAS FE-I4 pixel chip can be achieved.
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Submitted 15 August, 2014; v1 submitted 13 August, 2014;
originally announced August 2014.
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DMAPS: a fully depleted monolithic active pixel sensor - analog performance characterization
Authors:
Miroslav Havránek,
Tomasz Hemperek,
Hans Krüger,
Yunan Fu,
Leonard Germic,
Tetsuichi Kishishita,
Theresa Obermann,
Norbert Wermes
Abstract:
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $μ$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\approx$ 1000 e$^-$) and the radiation tolerance is much belo…
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Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $μ$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\approx$ 1000 e$^-$) and the radiation tolerance is much below the LHC requirements by factors of 100 to 1000. In this paper we present the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing the creation of a fully depleted detection volume. This concept overcomes the inherent limitations of charge collection by diffusion in the standard MAPS designs. We present results from a test chip EPCB01 designed in a commercial 150 nm CMOS technology. The technology provides a thin (50 $μ$m) high resistivity n-type silicon substrate as well as an additional deep p-well which allows to integrate full CMOS circuitry inside the pixel. Different matrix types with several variants of collection electrodes have been implemented. Measurements of the analog performance of this first implementation of DMAPS pixels will be presented.
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Submitted 2 July, 2014;
originally announced July 2014.
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DEPFET active pixel detectors for a future linear $e^+e^-$ collider
Authors:
O. Alonso,
R. Casanova,
A. Dieguez,
J. Dingfelder,
T. Hemperek,
T. Kishishita amd T. Kleinohl,
M. Koch,
H. Krueger,
M. Lemarenko,
F. Luetticke,
C. Marinas,
M. Schnell,
N. Wermes,
A. Campbell,
T. Ferber,
C. Kleinwort,
C. Niebuhr,
Y. Soloviev,
M. Steder,
R. Volkenborn,
S. Yaschenko,
P. Fischer,
C. Kreidl,
I. Peric,
J. Knopf
, et al. (62 additional authors not shown)
Abstract:
The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a senso…
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The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\mathrm{\mathbf{μm}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\mathbf{e^+ e^-}$ collider.
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Submitted 10 December, 2012;
originally announced December 2012.
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Belle II Technical Design Report
Authors:
T. Abe,
I. Adachi,
K. Adamczyk,
S. Ahn,
H. Aihara,
K. Akai,
M. Aloi,
L. Andricek,
K. Aoki,
Y. Arai,
A. Arefiev,
K. Arinstein,
Y. Arita,
D. M. Asner,
V. Aulchenko,
T. Aushev,
T. Aziz,
A. M. Bakich,
V. Balagura,
Y. Ban,
E. Barberio,
T. Barvich,
K. Belous,
T. Bergauer,
V. Bhardwaj
, et al. (387 additional authors not shown)
Abstract:
The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been pr…
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The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.
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Submitted 1 November, 2010;
originally announced November 2010.
