Showing 1–50 of 130 results for author: Helm, M

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Authors: Oliver Steuer, Daniel Schwarz, Michael Oehme, Florian Bärwolf, Yu Cheng, Fabian Ganss, René Hübner, René Heller, Shengqiang Zhou, Manfred Helm, Gianaurelio Cuniberti, Yordan M. Georgiev, Slawomir Prucnal

Abstract: Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseud… ▽ More Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseudomorphic growth of Si1-x-yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, X-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4x1019 cm-3. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Authors: Oliver Steuer, Michail Michailow, René Hübner, Krzysztof Pyszniak, Marcin Turek, Ulrich Kentsch, Fabian Ganss, Muhammad Moazzam Khan, Lars Rebohle, Shengqiang Zhou, Joachim Knoch, Manfred Helm, Gianaurelio Cuniberti, Yordan M. Georgiev, Slawomir Prucnal

Abstract: For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band g… ▽ More For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band gap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1-x-yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical-mechanical polishing giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1-x-yGeySnx alloys by Sn ion beam implantation into Si1-yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1-yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1-x-yGeySnx with up to 2.3 at.% incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1-yGey films by masking unstructured regions on the chip. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Phonon and magnon dynamics across antiferromagnetic transition in 2D layered van der Waals material CrSBr

Authors: E. Uykur, A. A. Tsirlin, F. Long, M. Wenzel, M. Dressel, K. Mosina, Z. Sofer, M. Helm, S. Zhou

Abstract: We report temperature-dependent reflectivity spectra of the layered van der Waals magnet CrSBr in the far-infrared region. Polarization-dependent measurements resolve the vibrational modes along the E$\|a$- and $b$-axes and reveal the clear structural anisotropy. While the $a$-axis phonons notably harden on cooling, the $b$-axis phonon frequencies are almost temperature-independent. A phonon split… ▽ More We report temperature-dependent reflectivity spectra of the layered van der Waals magnet CrSBr in the far-infrared region. Polarization-dependent measurements resolve the vibrational modes along the E$\|a$- and $b$-axes and reveal the clear structural anisotropy. While the $a$-axis phonons notably harden on cooling, the $b$-axis phonon frequencies are almost temperature-independent. A phonon splitting due to the antiferromagnetic phase transition is observed for the 180~cm$^{-1}$ $a$-axis vibrational mode, accompanied by a phonon softening below $T_N$. Furthermore, an additional mode with strong magnetic characteristics at $\sim$360~cm$^{-1}$ is identified and attributed to the magnon excitation of CrSBr. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Comments: 6 pages, 3 figures

Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams

Authors: M. Hollenbach, N. Klingner, P. Mazarov, W. Pilz, A. Nadzeyka, F. Mayer, N. V. Abrosimov, L. Bischoff, G. Hlawacek, M. Helm, G. V. Astakhov

Abstract: Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creat… ▽ More Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, we apply a multi-step implantation protocol for the programmable activation of the G centers with sub-100- nm resolution. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon-free silicon wafers. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity. △ Less

Submitted 30 April, 2024; originally announced April 2024.

Comments: 7 pages, 5 figures

Probing the band splitting near the $Γ$ point in the van der Waals magnetic semiconductor CrSBr

Authors: Kaiman Lin, Yi Li, Mahdi Ghorbani-Asl, Zdenek Sofer, Stephan Winnerl, Artur Erbe, Arkady V. Krasheninnikov, Manfred Helm, Shengqiang Zhou, Ya** Dan, Slawomir Prucnal

Abstract: This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions ac… ▽ More This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions across different thicknesses of CrSBr, ranging from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal band splitting in both the conduction and valence bands, but also point to an intricate interplay between the optical, electronic and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Hot electron dynamics in a semiconductor nanowire under intense THz excitation

Authors: Andrei Luferau, Maximilian Obst, Stephan Winnerl, Alexej Pashkin, Susanne C. Kehr, Emmanouil Dimakis, Felix G. Kaps, Osama Hatem, Kalliopi Mavridou, Lukas M. Eng, Manfred Helm

Abstract: We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distri… ▽ More We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distributions anticipates a significant electron population in both L- and X-valleys. The two-temperature model is utilized for a quantitative analysis of the dynamics of the electron gas temperature under THz pum** at various power levels. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Comments: Manuscript + Supplementary Information

Ultralong-term high-density data storage with atomic defects in SiC

Authors: M. Hollenbach, C. Kasper, D. Erb, L. Bischoff, G. Hlawacek, H. Kraus, W. Kada, T. Ohshima, M. Helm, S. Facsko, V. Dyakonov, G. V. Astakhov

Abstract: There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we… ▽ More There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation. △ Less

Submitted 28 October, 2023; originally announced October 2023.

Comments: 8 pages, 4 figures

Journal ref: Adv. Funct. Mater. 23, 2313413 (2024)

Intrinsic magnetic properties of the layered antiferromagnet CrSBr

Authors: Fangchao Long, Kseniia Mosina, René Hübner, Zdenek Sofer, Julian Klein, Slawomir Prucnal, Manfred Helm, Florian Dirnberger, Shengqiang Zhou

Abstract: Van der Waals magnetic materials are an ideal platform to study low-dimensional magnetism. Opposed to other members of this family, the magnetic semiconductor CrSBr is highly resistant to degradation in air, which, besides its exceptional optical, electronic, and magnetic properties, is the reason the compound is receiving considerable attention at the moment. For many years, its magnetic phase di… ▽ More Van der Waals magnetic materials are an ideal platform to study low-dimensional magnetism. Opposed to other members of this family, the magnetic semiconductor CrSBr is highly resistant to degradation in air, which, besides its exceptional optical, electronic, and magnetic properties, is the reason the compound is receiving considerable attention at the moment. For many years, its magnetic phase diagram seemed to be well-understood. Recently, however, several groups observed a magnetic transition in magnetometry measurements at temperatures of around 40 K that is not expected from theoretical considerations, causing a debate about the intrinsic magnetic properties of the material. In this letter, we report the absence of this particular transition in magnetization measurements conducted on high-quality CrSBr crystals, attesting to the extrinsic nature of the low-temperature magnetic phase observed in other works. Our magnetometry results obtained from large bulk crystals are in very good agreement with the magnetic phase diagram of CrSBr previously predicted by the mean-field theory; A-type antiferromagnetic order is the only phase observed below the Néel temperature at TN = 131 K. Moreover, numerical fits based on the Curie-Weiss law confirm that strong ferromagnetic correlations are present within individual layers even at temperatures much larger than TN. △ Less

Submitted 9 September, 2023; originally announced September 2023.

Comments: 13 pages, submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 123, 222401 (2023)

Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr

Authors: Kaiman Lin, Xiaoxiao Sun, Florian Dirnberger, Yi Li, Jiang Qu, Peiting Wen, Zdenek Sofer, Aljoscha Söll, Stephan Winnerl, Manfred Helm, Shengqiang Zhou, Ya** Dan, Slawomir Prucnal

Abstract: The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling between its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in… ▽ More The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling between its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (~14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provides new insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials. △ Less

Submitted 31 January, 2024; v1 submitted 9 August, 2023; originally announced August 2023.

Comments: 21 pages, together with suppl

Journal ref: ACS Nano 18, 2898-2905 (2024)

Possible Eliashberg-type superconductivity enhancement effects in a two-band superconductor MgB2 driven by narrow-band THz pulses

Authors: Sergei Sobolev, Amon Lanz, Tao Dong, Amrit Pokharel, Viktor Kabanov, Tie-Quan Xu, Yue Wang, Zi-Zhao Gan, L. Y. Shi, Nan-Lin Wang, Alexej Pashkin, Ece Uykur, Stephan Winnerl, Manfred Helm, Jure Demsar

Abstract: We study THz-driven condensate dynamics in epitaxial thin films of MgB$_{2}$, a prototype two-band superconductor (SC) with weak interband coupling. The temperature and excitation density dependent dynamics follow the behavior predicted by the phenomenological bottleneck model for the single-gap SC, implying adiabatic coupling between the two condensates on the ps timescale. The amplitude of the T… ▽ More We study THz-driven condensate dynamics in epitaxial thin films of MgB$_{2}$, a prototype two-band superconductor (SC) with weak interband coupling. The temperature and excitation density dependent dynamics follow the behavior predicted by the phenomenological bottleneck model for the single-gap SC, implying adiabatic coupling between the two condensates on the ps timescale. The amplitude of the THz-driven suppression of condensate density reveals an unexpected decrease in pair-breaking efficiency with increasing temperature - unlike in the case of optical excitation. The reduced pair-breaking efficiency of narrow-band THz pulses, displaying minimum near $\approx0.7$ T$_{c}$, is attributed to THz-driven, long-lived, non-thermal quasiparticle distribution, resulting in Eliashberg-type enhancement of superconductivity, competing with pair-breaking. △ Less

Submitted 1 August, 2023; originally announced August 2023.

Coherent phonon and unconventional carriers in the magnetic kagome metal Fe$_3$Sn$_2$

Authors: M. V. Gonçalves-Faria, A. Pashkin, Q. Wang, H. C. Lei, S. Winnerl, A. A. Tsirlin, M. Helm, E. Uykur

Abstract: Temperature- and fluence-dependent carrier dynamics of the magnetic Kagome metal Fe$_3$Sn$_2$ were studied using the ultrafast optical pump-probe technique. Two carrier relaxation processes ($τ_1$ and $τ_2$) and a laser induced coherent optical phonon were observed. By using the two-temperature model for metals, we ascribe the shorter relaxation $τ_1$ (~1 ps) to hot electrons transferring their en… ▽ More Temperature- and fluence-dependent carrier dynamics of the magnetic Kagome metal Fe$_3$Sn$_2$ were studied using the ultrafast optical pump-probe technique. Two carrier relaxation processes ($τ_1$ and $τ_2$) and a laser induced coherent optical phonon were observed. By using the two-temperature model for metals, we ascribe the shorter relaxation $τ_1$ (~1 ps) to hot electrons transferring their energy to the crystal lattice via electron-phonon scattering. $τ_2$ (~25 ps), on the other hand, cannot be explained as a conventional process and is attributed to the unconventional (localized) carriers in the material. The observed coherent oscillation is assigned to be a totally symmetric A$_{1g}$ optical phonon dominated by Sn displacements out of the Kagome planes, and possesses a prominently large amplitude, on the order of 10$^{-3}$, comparable to the maximum of the reflectivity change ($Δ$R/R). This amplitude is equivalent to charge-density-wave (CDW) systems, although no signs of such an instability were hitherto reported in Fe$_3$Sn$_2$. Our results set an unexpected connection between Fe$_3$Sn$_2$ and kagome metals with CDW instabilities, and suggest a unique interplay between phonon and electron dynamics in this compound. △ Less

Submitted 11 July, 2023; originally announced July 2023.

Comments: 12 pages, 14 figures

Ferromagnetic interlayer coupling in CrSBr crystals irradiated by ions

Authors: Fangchao Long, Mahdi Ghorbani-Asl, Kseniia Mosina, Yi Li, Kaiman Lin, Fabian Ganss, René Hübner, Zdenek Sofer, Florian Dirnberger, Akashdeep Kamra, Arkady V. Krasheninnikov, Slawomir Prucnal, Manfred Helm, Shengqiang Zhou

Abstract: Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic i… ▽ More Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggest that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers. △ Less

Submitted 27 September, 2023; v1 submitted 30 May, 2023; originally announced May 2023.

Comments: 25 pages including the supporting information, published as Nano Lett. 23, 8468-8473 (2023)

Journal ref: Nano Lett. 23, 8468-8473 (2023)

On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands

Authors: Mohd Saif Shaikh, Shuyu Wen, Mircea-Traian Catuneanu, Mao Wang, Artur Erbe, Slawomir Prucnal, Lars Rebohle, Shengqiang Zhou, Kambiz Jamshidi, Manfred Helm, Yonder Berencén

Abstract: Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wave… ▽ More Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology. △ Less

Submitted 2 May, 2023; originally announced May 2023.

Comments: 18 pages, 5 Figures, Supplementary information

Ultrafast Relaxation Dynamics of Spin-Density Wave Order in BaFe$_2$As$_2$ under High Pressures

Authors: Ivan Fotev, Stephan Winnerl, Saicharan Aswartham, Sabine Wurmehl, Bernd Büchner, Harald Schneider, Manfred Helm, Alexej Pashkin

Abstract: BaFe$_2$As$_2$ is the parent compound for a family of iron-based high-temperature superconductors as well as a prototypical example of the spin-density wave (SDW) system. In this study, we perform an optical pump-probe study of this compound to systematically investigate the SDW order across the pressure-temperature phase diagram. The suppression of the SDW order by pressure manifests itself by th… ▽ More BaFe$_2$As$_2$ is the parent compound for a family of iron-based high-temperature superconductors as well as a prototypical example of the spin-density wave (SDW) system. In this study, we perform an optical pump-probe study of this compound to systematically investigate the SDW order across the pressure-temperature phase diagram. The suppression of the SDW order by pressure manifests itself by the increase of relaxation time together with the decrease of the pump-probe signal and the pump energy necessary for complete vaporization of the SDW condensate. We have found that the pressure-driven suppression of the SDW order at low temperature occurs gradually in contrast to the thermally-induced SDW transition. Our results suggest that the pressure-driven quantum phase transition in BaFe$_2$As$_2$ (and probably other iron pnictides) is continuous and it is caused by the gradual worsening of the Fermi-surface nesting conditions. △ Less

Submitted 17 April, 2023; originally announced April 2023.

Journal ref: Phys. Rev. B 108, 035101 (2023)

Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy

Authors: Moritz Hoesch, Olena Fedchenko, Mao Wang, Christoph Schlueter, Dmitrii Potorochin, Katerina Medjanik, Sergey Babenkov, Anca S. Ciobanu, Aimo Winkelmann, Hans-Joachim Elmers, Shengqiang Zhou, Manfred Helm, Gerd Schönhense

Abstract: Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distingui… ▽ More Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these configurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expectations. For multi-Te configurations the results contribute to understanding the exceptional activation of free charge carriers in hyperdo** of chalcogens in silicon. △ Less

Submitted 23 June, 2023; v1 submitted 23 March, 2023; originally announced March 2023.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 122, 252108 (2023)

Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing

Authors: Roberto Rizzato, Martin Schalk, Stephan Mohr, Joachim P. Leibold, Jens C. Hermann, Fleming Bruckmaier, Peirui Ji, Georgy V. Astakhov, Ulrich Kentsch, Manfred Helm, Andreas V. Stier, Jonathan J. Finley, Dominik B. Bucher

Abstract: Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently l… ▽ More Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently limits its scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by nearly two orders of magnitude, approaching the fundamental $T_1$ relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect electromagnetic signals in the MHz range with sub-Hz resolution. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures. △ Less

Submitted 24 December, 2022; originally announced December 2022.

On Curie temperature of B20-MnSi films

Authors: Zichao Li, Ye Yuan, Viktor Begeza, Lars Rebohle, Manfred Helm, Kornelius Nielsch, Slawomir Prucnal, Shengqiang Zhou

Abstract: B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By controlling the Mn thickness and annealing parameters,… ▽ More B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By controlling the Mn thickness and annealing parameters, the pure MnSi phase of polycrystalline and textured nature as well as the mixed phase of MnSi and MnSi1.7 are obtained. Surprisingly, all these MnSi films show an increased Curie temperature of up to around 43 K. The Curie temperature is likely independent of the structural parameters within our accessibility including the film thickness above a threshold, strain, cell volume and the mixture with MnSi1.7. However, a pronounced phonon softening is observed for all samples, which can tentatively be attributed to slight Mn excess from stoichiometry, leading to the increased Curie temperature. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Comments: 20 pages, 6 figures

Journal ref: Scientific Reports volume 12, Article number: 16388 (2022)

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Authors: Mao Wang, Ye Yu, Slawomir Prucnal, Yonder Berencén, Mohd Saif Shaikh, Lars Rebohle, Muhammad Bilal Khan, Vitaly Zviagin, René Hübner, Alexej Pashkin, Artur Erbe, Yordan M. Georgiev, Marius Grundmann, Manfred Helm, Robert Kirchner, Shengqiang Zhou

Abstract: Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the sp… ▽ More Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Comments: 20 pages, 5 figures

Journal ref: Nanoscale 14, 2826-2836 (2022)

Emitter-Optomechanical Interaction in Ultra-High-Q hBN Nanocavities

Authors: Chenjiang Qian, Viviana Villafañe, Martin Schalk, Georgy V. Astakhov, Ulrich Kentsch, Manfred Helm, Pedro Soubelet, Andreas V. Stier, Jonathan J. Finley

Abstract: Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emis… ▽ More Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emission spectrum for cavities with Q-factor above a threshold of 10$^4$. Similar asymmetries are not observed for cavities without $V_B^-$ centers. To explain our findings, we model the system with phonon-induced light-matter coupling based on $V_B^-$ centers, and compare to the Jaynes-Cummings model for usual emitters. Our results reveal that the multipartite interplay arises during the light-matter coupling of $V_B^-$ centers, illustrating that it is phonon-induced, rather than being caused by thermal population of phonon modes. Such emitter-optomechanical interaction between different photon ($V_B^-$ emission, cavity photonic) and phonon ($V_B^-$ phonon, cavity mechanical) modes provides a novel system to interface spin defects, photons and phonons in condensed matters. △ Less

Submitted 31 January, 2023; v1 submitted 30 September, 2022; originally announced October 2022.

Nonlinear magnon control of atomic spin defects in scalable quantum devices

Authors: Mauricio Bejarano, Francisco J. T. Goncalves, Toni Hache, Michael Hollenbach, Christopher Heins, Tobias Hula, Lukas Körber, Jakob Heinze, Yonder Berencén, Manfred Helm, Jürgen Fassbender, Georgy V. Astakhov, Helmut Schultheiss

Abstract: Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance o… ▽ More Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance overlap between the magnonic system and the spin centers. Here we circumvent this challenge by harnessing nonlinear magnon scattering processes in a magnetic vortex to access magnon modes that overlap in frequency with silicon-vacancy ($\textrm{V}_{\mathrm{Si}}$) spin transitions in SiC. Our results offer a route to develop hybrid systems that benefit from marrying the rich nonlinear dynamics of magnons with the advantageous properties of SiC for scalable quantum technologies. △ Less

Submitted 18 August, 2022; originally announced August 2022.

Comments: 17 pages, 4 figures

Ultra-Broadband Visible and Infrared Light Generation Driven by Far Infrared Light in the Broad Region from 8μm to 240μm

Authors: Nils W. Rosemann, Robin C. Döring, Eike Dornsiepen, Jürgen Belz, Johannes Haust, Felix Bernhardt, Ferdinand Ziese, Claudio Attaccalite, Stephan Winnerl, Harald Schneider, Manfred Helm, Stefanie Dehnen, Kerstin Volz, Simone Sanna, Sangam Chatterjee

Abstract: The most commonly used nonlinear optical process is the conversion of infrared light at 1064nm to green light at 532nm, as performed in common laser pointers. However, more relevant for future applications are nonlinear optical processes that generate a broad spectrum, a so called supercontinuum. A desirable goal is generating a spectrum that covers the whole visible range (400 -900nm), i.e., whit… ▽ More The most commonly used nonlinear optical process is the conversion of infrared light at 1064nm to green light at 532nm, as performed in common laser pointers. However, more relevant for future applications are nonlinear optical processes that generate a broad spectrum, a so called supercontinuum. A desirable goal is generating a spectrum that covers the whole visible range (400 -900nm), i.e., white light. Nowadays, white-light generation is usually achieved in specially designed photonic fibres requiring high laser intensities. However, in previous studies we showed that amorphous powders of $(PhSn)_4S_6$ cluster-molecules generate white light when they are irradiated by low-intensity near-infrared light. In this study, we use the mid- and far-infrared radiation of a free-electron laser to investigate the same molecules. White-light generation is observed for excitation with wavelength between 8 and 240$μ$ m. While the emitted radiation shows only slight variations, its intensity strongly depends on the excitation wavelength. We then match the wavelength dependent efficiency with the infrared absorption spectra of the material. This comparison shows: whenever the excitation can introduce molecular vibrations, less white light is generated. For all other wavelengths the excitation interacts mostly with the electron system. This shows that the electron system and the molecular backbone are decoupled to a large extent. Our work contributes to the understanding of the nonlinear process that underlies white-light generation in $(PhSn)_4S_6$ cluster molecules. Additionally, it shows the high potential of this material in applications where a broad laser spectrum is desired. △ Less

Submitted 29 April, 2022; originally announced April 2022.

Comments: 7 pages, 5 figures

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

Authors: M. Hollenbach, N. Klingner, N. S. Jagtap, L. Bischoff, C. Fowley, U. Kentsch, G. Hlawacek, A. Erbe, N. V. Abrosimov, M. Helm, Y. Berencén, G. V. Astakhov

Abstract: A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been re… ▽ More A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm. △ Less

Submitted 27 April, 2022; originally announced April 2022.

Comments: 8 pages, 4 figures

Journal ref: Nat. Commun. 13, 7683 (2022)

Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission

Authors: Chenjiang Qian, Viviana Villafañe, Martin Schalk, G. V. Astakhov, Ulrich Kentsch, Manfred Helm, Pedro Soubelet, Nathan P. Wilson, Roberto Rizzato, Stephan Mohr, Alexander W. Holleitner, Dominik B. Bucher, Andreas V. Stier, JonathanJ. Finley

Abstract: Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q n… ▽ More Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to $V_B^-$. Our observations are consistent with the spatial redistribution of $V_B^-$ emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using $V_B^-$ as cavity spin-photon interfaces. △ Less

Submitted 22 June, 2022; v1 submitted 22 February, 2022; originally announced February 2022.

Journal ref: Nano Lett. 22(13), 5137-5142 (2022)

Terahertz control of photoluminescence emission in few-layer InSe

Authors: Tommaso Venanzi, Malte Selig, Alexej Pashkin, Stephan Winnerl, Manuel Katzer, Himani Arora, Artur Erbe, Amalia Patanè, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Leonetta Baldassarre, Andreas Knorr, Manfred Helm, Harald Schneider

Abstract: A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recove… ▽ More A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recovery of the emission on the time scale of 50ps at T =10K. Microscopic calculations reveal that the origin of the photoluminescence quenching is the terahertz absorption by photo-excited carriers: this leads to a heating of the carriers and a broadening of their distribution, which reduces the probability of bimolecular electron-hole recombination and, therefore, the luminescence. By numerically evaluating the Boltzmann equation, we are able to clarify the individual roles of optical and acoustic phonons in the subsequent cooling process. The same PL quenchingmechanismis expected in other van derWaals semiconductors and the effectwill be particularly strong for materials with low carrier masses and long carrier relaxation time, which is the case for InSe. This work gives a solid background for the development of opto-electronic applications based on InSe, such as THz detectors and optical modulators. △ Less

Submitted 18 February, 2022; originally announced February 2022.

Comments: The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals/

A photonic platform hosting telecom photon emitters in silicon

Authors: Michael Hollenbach, Nagesh S. Jagtap, Ciarán Fowley, Juan Baratech, Verónica Guardia-Arce, Ulrich Kentsch, Anna Eichler-Volf, Nikolay V. Abrosimov, Artur Erbe, ChaeHo Shin, Hakseong Kim, Manfred Helm, Woo Lee, Georgy V. Astakhov, Yonder Berencén

Abstract: Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a… ▽ More Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits. △ Less

Submitted 5 December, 2021; originally announced December 2021.

Comments: 6 pages, 4 figures

Chlorine do** of MoSe2 flakes by ion implantation

Authors: Slawomir Prucnal, Arsalan Hashemi, Mahdi Ghorbani-Asl, René Hübner, Juanmei Duan, Yidan Wei, Divanshu Sharma, Dietrich R. T. Zahn, René Ziegenrücker, Ulrich Kentsch, Arkady V. Krasheninnikov, Manfred Helm, Shengqiang Zhou

Abstract: The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable do** is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable do**. In this work, we demonstrat… ▽ More The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable do** is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable do**. In this work, we demonstrate n-type do** in MoSe2 flakes realized by low-energy ion implantation of Cl+ ions followed by millisecond-range flash lamp annealing (FLA). We further show that FLA for 3 ms with a peak temperature of about 1000 °C is enough to recrystallize implanted MoSe2. The Cl distribution in few-layer-thick MoSe2 is measured by secondary ion mass spectrometry. An increase in the electron concentration with increasing Cl fluence is determined from the softening and red shift of the Raman-active A_1g phonon mode due to the Fano effect. The electrical measurements confirm the n-type do** of Cl-implanted MoSe2. A comparison of the results of our density functional theory calculations and experimental temperature-dependent micro-Raman spectroscopy data indicates that Cl atoms are incorporated into the atomic network of MoSe2 as substitutional donor impurities. △ Less

Submitted 24 September, 2021; originally announced September 2021.

Comments: 32 pages, 10 figures

Journal ref: Nanoscale 13, 5834 (2021)

B20-MnSi films grown on Si(100) substrates with magnetic skyrmion signature

Authors: Zichao Li, Ye Yuan, René Hübner, Viktor Begeza, Thomas Naumann, Lars Rebohle, Olav Hellwig, Manfred Helm, Kornelius Nielsch, Slawomir Prucnal, Shengqiang Zhou

Abstract: Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, which would be more preferred for practical applicatio… ▽ More Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, which would be more preferred for practical applications. In this letter, we present the first preparation of B20-MnSi on Si(100) substrates. It is realized by sub-second solid-state reaction between Mn and Si via flash-lamp annealing at ambient pressure. The regrown layer shows an enhanced Curie temperature of 43 K compared with bulk B20-MnSi. The magnetic skyrmion signature is proved in our films by magnetic and transport measurements. The millisecond-range flash annealing provides a promising avenue for the fabrication of Si-based skyrmionic devices. △ Less

Submitted 24 September, 2021; originally announced September 2021.

Comments: 17 pages, accepted at Materials Today Physics

Pump-induced terahertz anisotropy in bilayer graphene

Authors: Angelika Seidl, Roozbeh Anvari, Marc M. Dignam, Peter Richter, Thomas Seyller, Harald Schneider, Manfred Helm, Stephan Winnerl

Abstract: We investigate the intraband nonlinear dynamics in doped bilayer graphene in the presence of strong, linearly-polarized, in-plane terahertz fields. We perform degenerate pump-probe experiments with 3.4 THz fields on doped bilayer graphene at low temperature (12 K) and find that when the pump is co-polarized with the probe beam, the differential pump-probe signal is almost double that found in the… ▽ More We investigate the intraband nonlinear dynamics in doped bilayer graphene in the presence of strong, linearly-polarized, in-plane terahertz fields. We perform degenerate pump-probe experiments with 3.4 THz fields on doped bilayer graphene at low temperature (12 K) and find that when the pump is co-polarized with the probe beam, the differential pump-probe signal is almost double that found in the cross-polarized case. We show that the origin of this pump-induced anisotropy is the difference in the average electron effective mass in the probe direction when carriers are displaced in k-space by the pump either parallel or perpendicular to the direction of the probe polarization. We model the system using both a simple semiclassical model and a Boltzmann equation simulation of the electron dynamics with phenomenological scattering and find good qualitative agreement with experimental results. △ Less

Submitted 20 January, 2022; v1 submitted 25 August, 2021; originally announced August 2021.

Enhanced trion emission in monolayer MoSe2 by constructing a type-I van der Waals heterostructure

Authors: Juanmei Duan, Phanish Chava, Mahdi Ghorbani-Asl, Denise Erb, Liang Hu, Arkady V. Krasheninnikov, Harald Schneider, Lars Rebohle, Artur Erbe, Manfred Helm, Yu-Jia Zeng, Shengqiang Zhou, Slawomir Prucnal

Abstract: Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is impo… ▽ More Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is important to enhance the trion emission and its stability. In this study, we construct a MoSe2/FePS3 van der Waals heterostructure (vdWH) with type-I band alignment, which allows for carriers injection from FePS3 to MoSe2. At low temperatures, the neutral exciton (X0) emission in this vdWH is almost completely suppressed. The ITrion/Ix0 intensity ratio increases from 0.44 in a single MoSe2 monolayer to 20 in this heterostructure with the trion charging state changing from negative in the monolayer to positive in the heterostructure. The optical pum** with circularly polarized light shows a 14% polarization for the trion emission in MoSe2/FePS3. Moreover, forming such type-I vdWH also gives rise to a 20-fold enhancement of the room temperature photoluminescence from monolayer MoSe2. Our results demonstrate a novel approach to convert excitons to trions in monolayer 2D TMDCs via interlayer do** effect using type-I band alignment in vdWH. △ Less

Submitted 26 July, 2021; originally announced July 2021.

Comments: 21 pages, including the suppl. materials, accepted at Adv. Fun. Mater

Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdo**

Authors: Mao Wang, Eric García-Hemme, Yonder Berencén, René Hübner, Yufang Xie, Lars Rebohle, Chi Xu, Harald Schneider, Manfred Helm, Shengqiang Zhou

Abstract: Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive stu… ▽ More Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room-temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p-n photodiode exhibits a spectral photoresponse up to 5 μm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0-1.9 μm. We also investigate the correlation between the background noise and the sensitivity of the Te-hyperdoped Si photodiode, where the maximum room-temperature specific detectivity is found to be 3.2 x 10^12 cmHz^{1/2}W^{-1} and 9.2 x 10^8 cmHz^{1/2}W^{-1} at 1 μm and 1.55 μm, respectively. This work contributes to pave the way towards establishing a Si-based broadband infrared photonic system operating at room temperature. △ Less

Submitted 30 November, 2020; originally announced November 2020.

Comments: 24 pages, 5 figures, to be published at Adv. Opt. Mater

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Authors: Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang, Maik Butterling, Matthias Posselt, Joachim Knoch, Horst Windgassen, Eric Hirschmann, Yonder Berencén, Lars Rebohle, Mao Wang, Enrico Napoltani, Jacopo Frigerio, Andrea Ballabio, Giovani Isella, René Hübner, Andreas Wagner, Hartmut Bracht, Manfred Helm, Shengqiang Zhou

Abstract: The n-type do** of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concen… ▽ More The n-type do** of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology. △ Less

Submitted 28 October, 2020; originally announced October 2020.

Comments: 19 pages, 5 figures, to be published at New J. Phys

Time refraction of spin waves

Authors: K. Schultheiss, N. Sato, P. Matthies, L. Körber, K. Wagner, T. Hula, O. Gladii, J. E. Pearson, A. Hoffmann, M. Helm, J. Fassbender, H. Schultheiss

Abstract: We present an experimental study of time refraction of spin waves propagating in microscopic waveguides under the influence of time-varying magnetic fields. Using space- and time-resolved Brillouin light scattering microscopy, we demonstrate that the broken translational symmetry along the time coordinate can be used to in- or decrease the energy of spin waves during their propagation. This allows… ▽ More We present an experimental study of time refraction of spin waves propagating in microscopic waveguides under the influence of time-varying magnetic fields. Using space- and time-resolved Brillouin light scattering microscopy, we demonstrate that the broken translational symmetry along the time coordinate can be used to in- or decrease the energy of spin waves during their propagation. This allows for a broadband and controllable shift of the spin-wave frequency. Using an integrated design of spin-wave waveguide and microscopic current line for the generation of strong, nanosecond-long, magnetic field pulses, a conversion efficiency up to 39% of the carrier spin-wave frequency is achieved, significantly larger compared to photonic systems. Given the strength of the magnetic field pulses and its strong impact on the spin-wave dispersion relation, the effect of time refraction can be quantified on a length scale comparable to the spin-wave wavelength. Furthermore, we utilize time refraction to excite spin-wave bursts with pulse durations in the nanosecond range and a frequency shift depending on the pulse polarity. △ Less

Submitted 8 September, 2020; originally announced September 2020.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 137201 (2021)

Map** the stray fields of a nanomagnet using spin qubits in SiC

Authors: M. Bejarano, F. J. T. Goncalves, M. Hollenbach, T. Hache, T. Hula, Y. Berencén, J. Fassbender, M. Helm, G. V. Astakhov, H. Schultheiss

Abstract: We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patt… ▽ More We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale. △ Less

Submitted 1 September, 2020; originally announced September 2020.

Comments: 4 pages, 4 figures, submitted to APL

Engineering telecom single-photon emitters in silicon for scalable quantum photonics

Authors: M. Hollenbach, Y. Berencén, U. Kentsch, M. Helm, G. V. Astakhov

Abstract: We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the car… ▽ More We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology. △ Less

Submitted 21 August, 2020; originally announced August 2020.

Comments: 8 pages, 5 figures

Journal ref: Opt. Express 28, 26111 (2020)

Topological Hall effect in single thick SrRuO3 layers induced by defect engineering

Authors: Changan Wang, Ching-Hao Chang, Andreas Herklotz, Chao Chen, Fabian Ganss, Ulrich Kentsch, Deyang Chen, Xingsen Gao, Yu-Jia Zeng, Olav Hellwig, Manfred Helm, Sibylle Gemming, Ying-Hao Chu, Shengqiang Zhou

Abstract: The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by in… ▽ More The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study THE is observed in 60 nm thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 K to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated to the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronics devices. △ Less

Submitted 23 April, 2020; originally announced April 2020.

Comments: 18 pages, including the suppl. material, to be published at Advanced Electronic Materials

Journal ref: Adv. Electronic Materials, 6, 2000184 (2020)

Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Authors: Mao Wang, A. Debernardi, Wenxu Zhang, Chi Xu, Ye Yuan, Yufang Xie, Y. Berencén, S. Prucnal, M. Helm, Shengqiang Zhou

Abstract: Hyperdo** Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion… ▽ More Hyperdo** Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hop** mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction. △ Less

Submitted 15 September, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Comments: 19 pages, 6 figures

Journal ref: Phys. Rev. B 102, 085204 (2020)

Nonlinear Charge Transport in InGaAs Nanowires at Terahertz Frequencies

Authors: Rakesh Rana, Leila Balaghi, Ivan Fotev, Harald Schneider, Manfred Helm, Emmanouil Dimakis, Alexej Pashkin

Abstract: We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump / THz probe spectroscopy with broadband THz pulses and peak electric fields up to 0.6 MV/cm. The plasmon resonance of the photoexcited charge carriers exhibits a systematic redshift and a suppression of its spectral weight for THz driving fields exceeding 0.4… ▽ More We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump / THz probe spectroscopy with broadband THz pulses and peak electric fields up to 0.6 MV/cm. The plasmon resonance of the photoexcited charge carriers exhibits a systematic redshift and a suppression of its spectral weight for THz driving fields exceeding 0.4 MV/cm. This behavior is attributed to the intervalley electron scattering resulting in the increase of the average electron effective mass and the corresponding decrease of the electron mobility by about 2 times at the highest fields. We demonstrate that the increase of the effective mass is non-uniform along the nanowires and takes place mainly in their middle part, leading to a spatially inhomogeneous carrier response. Our results quantify the nonlinear transport regime in GaAs-based nanowires and show their high potential for development of nano-devices operating at THz frequencies. △ Less

Submitted 1 April, 2020; originally announced April 2020.

Comments: includes supporting information

Photoluminescence dynamics in few-layer InSe

Authors: Tommaso Venanzi, Himani Arora, Stephan Winnerl, Alexej Pashkin, Phanish Chava, Amalia Patanè, Zakhar D. Kovalyuk, Zalhar R. Kudrynskyi, Kenji Watanabe, Takashi Taniguchi, Artur Erbe, Manfred Helm, Harald Schneider

Abstract: We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguish… ▽ More We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguishable at low temperature: direct bandgap electron-hole and defect-assisted recombination. The two recombination processes have lifetime of $τ_1 \sim 8\;$ns and $τ_2 \sim 100\;$ns, respectively. The relative weights of the direct bandgap and defect-assisted contributions show a strong layer dependence due to the direct-to-indirect bandgap crossover. Electron-hole PL lifetime is limited by population transfer to lower-energy states and no dependence on the number of layers was observed. The lifetime of the defect-assisted recombination gets longer for thinner samples. Finally, we show that the PL lifetime decreases at high temperatures as a consequence of more efficient non-radiative recombinations. △ Less

Submitted 31 March, 2020; v1 submitted 27 March, 2020; originally announced March 2020.

Comments: The manuscript will be published in the journal Physical Review Materials. Copyright 2011 by American Physical Society (https://journals.aps.org/prmaterials/)

p-type codo** effect in (Ga,Mn)As: Mn lattice location versus magnetic properties

Authors: Chi Xu, Chenhui Zhang, Mao Wang, Yufang Xie, René Hübner, René Heller, Ye Yuan, Manfred Helm, Xixiang Zhang, Shengqiang Zhou

Abstract: In the present work, we perform a systematic investigation on p-type codo** in (Ga,Mn)As. Through gradually increasing Zn do** concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The sa… ▽ More In the present work, we perform a systematic investigation on p-type codo** in (Ga,Mn)As. Through gradually increasing Zn do** concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The samples present a phase transition from ferromagnetism to paramagnetism upon increasing hole concentration. In the intermediate regime, we observe a signature of antiferromagnetism. By using channeling Rutherford backscattering spectrometry and particle-induced x-ray emission, the substitutional Mn atoms are observed to shift to interstitial sites, while more Zn atoms occupy Ga sites, which explains the observed behavior. This is also consistent with first-principles calculations, showing that the complex of substitutional Zn and interstitial Mn has the lowest formation energy. △ Less

Submitted 26 August, 2019; originally announced August 2019.

Comments: 21 pages, 8 figures

Journal ref: Phys. Rev. Materials 3, 084604 (2019)

Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors

Authors: Chi Xu, Mao Wang, Ye Yuan, Gerard Larkin, Manfred Helm, Shengqiang Zhou

Abstract: A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is presented in this work. In all materials, both Curie temperature and magnetization decrease upon increasing the hole compensation, confirming the description of hole mediated ferromagnetism according to the p-d Zener mode… ▽ More A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is presented in this work. In all materials, both Curie temperature and magnetization decrease upon increasing the hole compensation, confirming the description of hole mediated ferromagnetism according to the p-d Zener model. The material dependence of Curie temperature and magnetization versus hole compensation reveals that the manipulation of magnetic properties in III-Mn-V dilute ferromagnetic semiconductors by ion irradiation is strongly influenced by the energy level location of the produced defect relative to the band edges in semiconductors. △ Less

Submitted 11 July, 2019; originally announced July 2019.

Comments: 11 pages, 4 figures

Journal ref: J. Phys. D: Appl. Phys. 52 355301 (2019)

Suppressed Auger scattering and tunable light emission of Landau-quantized massless Kane electrons

Authors: D. B. But, M. Mittendorff, C. Consejo, F. Teppe, N. N. Mikhailov, S. A. Dvoretskii, C. Faugeras, S. Winnerl, M. Helm, W. Knap, M. Potemski, M. Orlita

Abstract: The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing concept never resulted in the design of a reliable device. This is due to efficient Auger scattering of Landau-quantized electrons, which is an intrin… ▽ More The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing concept never resulted in the design of a reliable device. This is due to efficient Auger scattering of Landau-quantized electrons, which is an intrinsic non-radiative recombination channel that eventually gains over cyclotron emission in all materials studied so far: in conventional semiconductors with parabolic bands, but also in graphene with massless electrons. The Auger processes are favored in these systems by Landau levels (or their subsets) equally spaced in energy. Here we show that this scheme does not apply to massless Kane electrons in gapless HgCdTe alloy, in which undesirable Auger scattering is strongly suppressed and the sizeable cyclotron emission observed, for the first time in the case of massless particles. The gapless HgCdTe thus appears as a material of choice for future technology of Landau level lasers. △ Less

Submitted 21 July, 2020; v1 submitted 26 June, 2019; originally announced June 2019.

Comments: 11 pages, 7 figures including Supplementary materials

Journal ref: Nature Photonics 13, 783-787 (2019)

Up to 70 THz bandwidth from implanted Ge photoconductive antenna excited by a fibre laser

Authors: Abhishek Singh, Alexej Pashkin, Stephan Winnerl, Malte Welsch, Cornelius Beckh, Philipp Sulzer, Alfred Leitenstorfer, Manfred Helm, Harald Schneider

Abstract: Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the upper frequency limit of photoconductive emitters - the most widespread technique in THz spectroscopy - reaches only up to 7 THz in regular transmission mode due t… ▽ More Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the upper frequency limit of photoconductive emitters - the most widespread technique in THz spectroscopy - reaches only up to 7 THz in regular transmission mode due to the absorption by infrared-active optical phonons. Here, we present ultra-broadband (extending up to 70 THz) THz emission from Au implanted Ge emitter which is compatible with a fibre laser operating at 1.1 and 1.55 μm wavelengths at a repetition rates of 10 and 20 MHz, respectively. This opens a perspective for the development of compact THz photonic devices operating up to multi-THz frequencies and compatible with Si CMOS technology. △ Less

Submitted 9 March, 2020; v1 submitted 19 June, 2019; originally announced June 2019.

Journal ref: Light Sci Appl 9, 30 (2020)

Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium

Authors: Slawomir Prucnal, Viton Heera, René Hübner, Mao Wang, Grzegorz P. Mazur, Michał J. Grzybowski, Xin Qin, Ye Yuan, Matthias Voelskow, Wolfgang Skorupa, Lars Rebohle, Manfred Helm, Maciej Sawicki, Shengqiang Zhou

Abstract: Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystall… ▽ More Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10^21 cm-3. Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al- and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values. △ Less

Submitted 15 April, 2019; originally announced April 2019.

Comments: including the suppl. information, 24 pages, accepted at Phys. Rev. Materials

Journal ref: Phys. Rev. Materials 3, 054802 (2019)

Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Authors: Changan Wang, Hongbin Zhang, Kumar Deepak, 5Chao Chen, Arnaud Fouchet, Juanmei Duan, Donovan Hilliard, Ulrich Kentsch, Deyang Chen, Min Zeng, Xingsen Gao, Yu-Jia Zeng, Manfred Helm, Wilfrid Prellier, Shengqiang Zhou

Abstract: Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in develo** novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice… ▽ More Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in develo** novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons. △ Less

Submitted 14 April, 2019; originally announced April 2019.

Comments: 17 pages, 4 figures,submitted to Phys. Rev. Materials

Journal ref: Phys. Rev. Materials 3, 115001 (2019)

Strain and Band-Gap Engineering in Ge-Sn Alloys via P Do**

Authors: Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Jerzy Żuk, Marcin Turek, Andrzej Droździel, Krzysztof Pyszniak, Robert Kudrawiec, Maciej P. Polak, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, Shengqiang Zhou

Abstract: Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type do**. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of… ▽ More Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type do**. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. Applied 10, 064055 (2018)

Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical and optical properties

Authors: Mao Wang, R. Hubner, Chi Xu Yufang Xie, Y. Berencen, R. Heller, L. Rebohle, M. Helm, S. Prucnal, Shengqiang Zhou

Abstract: Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-fabricated hyperdoped Si is of great importance fo… ▽ More Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-fabricated hyperdoped Si is of great importance for the device fabrication process involving temperature-dependent steps like ohmic contact formation. Here, we report on the thermal stability of the as-fabricated Te-hyperdoped Si subjected to isochronal furnace anneals from 250 °C to 1200 °C. We demonstrate that Te-hyperdoped Si exhibits thermal stability up to 400 °C with a duration of 10 minutes that even helps to further improve the crystalline quality, the electrical activation of Te dopants and the room-temperature sub-band gap absorption. At higher temperatures, however, Te atoms are found to move out from the substitutional sites with a migration energy of EM = 2.1+/-0.1 eV forming inactive clusters and precipitates that impair the structural, electrical and optical properties. These results provide further insight into the underlying physical state transformation of Te dopants in a metastable compositional regime caused by post-synthesis thermal annealing as well as pave the way for the fabrication of advanced hyperdoped Si-based devices. △ Less

Submitted 4 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Materials 3, 044606 (2019)

Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing

Authors: Yufang Xie, Ye Yuan, Mao Wang, Chi Xu, René Hübner, Jörg Grenzer, Yu-Jia Zeng, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal

Abstract: Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at… ▽ More Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3 is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology. △ Less

Submitted 23 October, 2018; originally announced October 2018.

Comments: 10 pages, 5 figures, submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 113, 222401 (2018)

Carrier dynamics in graphene: ultrafast many-particle phenomena

Authors: Ermin Malic, Torben Winzer, Florian Wendler, Samuel Brem, Roland Jago, Andreas Knorr, Martin Mittendorff, Jacob C. König-Otto, Tobias Plötzing, Daniel Neumaier, Harald Schneider, Manfred Helm, Stephan Winnerl

Abstract: Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle p… ▽ More Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion. △ Less

Submitted 15 October, 2018; originally announced October 2018.

Comments: 17 pages, 10 figures

Defect-induced exchange bias in a single SrRuO3 layer

Authors: Changan Wang, Chao Chen, Ching-Hao Chang, Hsu-Sheng Tsai, Parul Pandey, Chi Xu, Roman Böttger, Deyang Chen, Yu-Jia Zeng, Xingsen Gao, Manfred Helm, Shengqiang Zhou

Abstract: Exchange bias stems from the interaction between different magnetic phases and therefore it generally occurs in magnetic multilayers. Here we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature, but also drive a metal-insulator transition at a low temp… ▽ More Exchange bias stems from the interaction between different magnetic phases and therefore it generally occurs in magnetic multilayers. Here we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature, but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to around 0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation. △ Less

Submitted 28 September, 2018; originally announced September 2018.

Comments: 14 pages, 5 figures

Journal ref: ACS Appl. Mater. Interfaces, 10, 27472 (2018)

Non-thermal nature of photo-induced insulator-to-metal transition in NbO$_2$

Authors: Rakesh Rana, J. Michael Klopf, Jörg Grenzer, Harald Schneider, Manfred Helm, Alexej Pashkin

Abstract: We study the photo-induced metallization process in niobium dioxide NbO$_2$. This compound undergoes the thermal insulator-to-metal transition at the remarkably high temperature of 1080 K. Our optical pump - terahertz probe measurements reveal the ultrafast switching of the film on a sub-picosecond timescale and the formation of a metastable metallic phase when the incident pump fluence exceeds th… ▽ More We study the photo-induced metallization process in niobium dioxide NbO$_2$. This compound undergoes the thermal insulator-to-metal transition at the remarkably high temperature of 1080 K. Our optical pump - terahertz probe measurements reveal the ultrafast switching of the film on a sub-picosecond timescale and the formation of a metastable metallic phase when the incident pump fluence exceeds the threshold of 10 mJ/cm$^2$. Remarkably, this threshold value corresponds to the deposited energy which is capable of heating NbO$_2$ only up to 790 K, thus, evidencing the non-thermal character of the photo-induced insulator-to-metal transition. We also observe an enhanced formation of the metallic phase above the second threshold of 17.5 mJ/cm$^2$ which corresponds to the onset of the thermal switching. The transient optical conductivity in the metastable phase can be modeled using the Drude-Smith model confirming its metallic character. The present observation of non-thermal transition in NbO$_2$ can serve as an important test bed for understanding photo-induced phenomena in strongly correlated oxides. △ Less

Submitted 20 September, 2018; v1 submitted 19 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. B 99, 041102 (2019)