Showing 1–8 of 8 results for author: Hellmüller, S

Spin pairs in a weakly coupled many-electron quantum dot

Authors: S. Hellmüller, D. Bischoff, T. Müller, M. Beck, K. Ensslin, T. Ihn

Abstract: We report the observation of an unusually large number of consecutive spin pairs in a weakly coupled many-electron GaAs/AlGaAs quantum dot. The pairs are identified due to pairwise parallel shifts of Coulomb resonances in a perpendicular magnetic field. Using a nearby quantum point contact for time-resolved charge detection, the tunneling rates are investigated as a function of gate voltage and ma… ▽ More We report the observation of an unusually large number of consecutive spin pairs in a weakly coupled many-electron GaAs/AlGaAs quantum dot. The pairs are identified due to pairwise parallel shifts of Coulomb resonances in a perpendicular magnetic field. Using a nearby quantum point contact for time-resolved charge detection, the tunneling rates are investigated as a function of gate voltage and magnetic field. We compare our experimental data to a single-level transport model and discuss possible reasons for deviations. △ Less

Submitted 27 September, 2015; originally announced September 2015.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 92, 115401 (2015)

Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

Authors: W. Fu, M. El Abbassi, T. Hasler, M. Jung, M. Steinacher, M. Calame, C. Schönenberger, G. Puebla-Hellmann, S. Hellmüller, T. Ihn, A. Wallraff

Abstract: We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity… ▽ More We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependent gating in solution with nanosecond time resolution. △ Less

Submitted 2 January, 2014; originally announced January 2014.

Comments: 14 pages, 4 figures

A circuit analysis of an in situ tunable radio-frequency quantum point contact

Authors: Thomas Müller, Theodore Choi, Sarah Hellmüller, Klaus Ensslin, Thomas Ihn, Silke Schön

Abstract: A detailed analysis of the tunability of a radio-frequency quantum point contact setup using a C-LCR circuit is presented. We calculate how the series capacitance influences resonance frequency and charge-detector resistance for which matching is achieved as well as the voltage and power delivered to the load. Furthermore, we compute the noise contributions in the system and compare our findings w… ▽ More A detailed analysis of the tunability of a radio-frequency quantum point contact setup using a C-LCR circuit is presented. We calculate how the series capacitance influences resonance frequency and charge-detector resistance for which matching is achieved as well as the voltage and power delivered to the load. Furthermore, we compute the noise contributions in the system and compare our findings with measurements taken with an etched quantum point contact. While our considerations mostly focus on our specific choice of matching circuit, the discussion of the influence of source-to-load power transfer on the signal-to-noise ratio is valid generally. △ Less

Submitted 3 March, 2013; originally announced March 2013.

Comments: 10 pages, 9 figures

Journal ref: Rev. Sci. Instrum. 84, 083902 (2013)

Optimization of sample-chip design for stub-matched radio-frequency reflectometry measurements

Authors: S. Hellmüller, M. Pikulski, T. Müller, B. Küng, G. Puebla-Hellmann, A. Wallraff, M. Beck, K. Ensslin, T. Ihn

Abstract: A radio-frequency (rf) matching circuit with an in situ tunable varactor diode used for rf reflectometry measurements in semiconductor nanostructures is investigated and used to optimize the sample-specific chip design. The samples are integrated in a 2-4 GHz stub-matching circuit consisting of a waveguide stub shunted to the terminated coplanar waveguide. Several quantum point contacts fabricated… ▽ More A radio-frequency (rf) matching circuit with an in situ tunable varactor diode used for rf reflectometry measurements in semiconductor nanostructures is investigated and used to optimize the sample-specific chip design. The samples are integrated in a 2-4 GHz stub-matching circuit consisting of a waveguide stub shunted to the terminated coplanar waveguide. Several quantum point contacts fabricated on a GaAs/AlGaAs heterostructure with different chip designs are compared. We show that the change of the reflection coefficient for a fixed change in the quantum point contact conductance can be enhanced by a factor of 3 compared to conventional designs by a suitable electrode geometry. △ Less

Submitted 8 June, 2012; originally announced June 2012.

Journal ref: Appl. Phys. Lett. 101, 042112 (2012);

Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime

Authors: T. Müller, J. Güttinger, D. Bischoff, S. Hellmüller, K. Ensslin, T. Ihn

Abstract: In situ tunable radio-frequency charge detection is used for the determination of the tunneling rates into and out of a graphene single quantum dot connected to only one lead. An analytical model for calculating these rates in the multi-level tunneling regime is presented and found to correspond very well to our experimental observations. In situ tunable radio-frequency charge detection is used for the determination of the tunneling rates into and out of a graphene single quantum dot connected to only one lead. An analytical model for calculating these rates in the multi-level tunneling regime is presented and found to correspond very well to our experimental observations. △ Less

Submitted 18 April, 2012; originally announced April 2012.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 101, 012104 (2012)

An in-situ tunable radio-frequency quantum point contact

Authors: Thomas Müller, Bruno Küng, Paul Studerus, Sarah Hellmüller, Klaus Ensslin, Thomas Ihn, Matthias Reinwald, Werner Wegscheider

Abstract: Incorporating a variable capacitance diode into a radio-frequency matching circuit allows us to in-situ tune the resonance frequency of an RF quantum point contact, increasing the versatility of the latter as a fast charge sensor of a proximal quantum circuit. The performance of this method is compared in detail to conventional low-frequency charge detection. The approach is also applicable to oth… ▽ More Incorporating a variable capacitance diode into a radio-frequency matching circuit allows us to in-situ tune the resonance frequency of an RF quantum point contact, increasing the versatility of the latter as a fast charge sensor of a proximal quantum circuit. The performance of this method is compared in detail to conventional low-frequency charge detection. The approach is also applicable to other RF-detection schemes, such as RF-SET circuits. △ Less

Submitted 14 September, 2010; v1 submitted 9 September, 2010; originally announced September 2010.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 97, 202104 (2010)

Energy gaps in etched graphene nanoribbons

Authors: C. Stampfer, J. Guettinger, S. Hellmueller, F. Molitor, K. Ensslin, T. Ihn

Abstract: Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates vary… ▽ More Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates vary by up to 30% for different localized states which must therefore be spread in position along the ribbon. A single-electron transistor is used to prove the addition of individual electrons to the localized states. In our sample the characteristic charging energy is of the order of 10 meV, the characteristic strength of the disorder potential of the order of 100 meV. △ Less

Submitted 5 November, 2008; originally announced November 2008.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 102, 056403 (2009)

Charge Detection in Graphene Quantum Dots

Authors: J. Guettinger, C. Stampfer, S. Hellmueller, F. Molitor, T. Ihn, K. Ensslin

Abstract: We report measurements on a graphene quantum dot with an integrated graphene charge detector. The quantum dot device consists of a graphene island (diameter approx. 200 nm) connected to source and drain contacts via two narrow graphene constrictions. From Coulomb diamond measurements a charging energy of 4.3 meV is extracted. The charge detector is based on a 45 nm wide graphene nanoribbon place… ▽ More We report measurements on a graphene quantum dot with an integrated graphene charge detector. The quantum dot device consists of a graphene island (diameter approx. 200 nm) connected to source and drain contacts via two narrow graphene constrictions. From Coulomb diamond measurements a charging energy of 4.3 meV is extracted. The charge detector is based on a 45 nm wide graphene nanoribbon placed approx. 60 nm from the island. We show that resonances in the nanoribbon can be used to detect individual charging events on the quantum dot. The charging induced potential change on the quantum dot causes a step-like change of the current in the charge detector. The relative change of the current ranges from 10% up to 60% for detecting individual charging events. △ Less

Submitted 23 September, 2008; originally announced September 2008.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 93, 212102 (2008)