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Thirty-six New, High-Probability, Damped Ly-alpha Absorbers at Redshift 0.42 < z < 0.70
Authors:
David A. Turnshek,
Eric M. Monier,
Sandhya M. Rao,
Timothy S. Hamilton,
Gendith M. Sardane,
Ryan Held
Abstract:
Quasar damped Ly-alpha (DLA) absorption line systems with redshifts z<1.65 are used to trace neutral gas over approximately 70 per cent of the most recent history of the Universe. However, such systems fall in the UV and are rarely found in blind UV spectroscopic surveys. Therefore, it has been difficult to compile a moderate-sized sample of UV DLAs in any narrow cosmic time interval. However, DLA…
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Quasar damped Ly-alpha (DLA) absorption line systems with redshifts z<1.65 are used to trace neutral gas over approximately 70 per cent of the most recent history of the Universe. However, such systems fall in the UV and are rarely found in blind UV spectroscopic surveys. Therefore, it has been difficult to compile a moderate-sized sample of UV DLAs in any narrow cosmic time interval. However, DLAs are easy to identify in low-resolution spectra because they have large absorption rest equivalent widths. We have performed an efficient strong-MgII-selected survey for UV DLAs at redshifts z=[0.42,0.70] using HST's low-resolution ACS-HRC-PR200L prism. This redshift interval covers ~1.8 Gyr in cosmic time, i.e., t~[7.2,9.0] Gyrs after the Big Bang. A total of 96 strong MgII absorption-line systems identified in SDSS spectra were successfully observed with the prism at the predicted UV wavelengths of Ly-alpha absorption. We found that 35 of the 96 systems had a significant probability of being DLAs. One additional observed system could be a very high N(HI) DLA (N(HI)~2x10^22 atoms cm^-2 or possibly higher), but since very high N(HI) systems are extremely rare, it would be unusual for this system to be a DLA given the size of our sample. Here we present information on our prism sample, including our best estimates of N(HI) and errors for the 36 systems fitted with damped Ly-alpha profiles. This list is valuable for future follow-up studies of low-redshift DLAs in a small redshift interval, although such work would clearly benefit from improved UV spectroscopy to more accurately determine their neutral hydrogen column densities.
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Submitted 13 March, 2015; v1 submitted 10 April, 2014;
originally announced April 2014.
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Hetero-epitaxial EuO Interfaces Studied by Analytic Electron Microscopy
Authors:
Julia A. Mundy,
Daniel Hodash,
Alexander Melville,
Rainer Held,
Thomas Mairoser,
David A. Muller,
Lena F. Kourkoutis,
Andreas Schmehl,
Darrell G. Schlom
Abstract:
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the quality of the interface between the injector and silicon. Here, we use atomic-resolution scanning transmission electron microscopy in conjunction with electron e…
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With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the quality of the interface between the injector and silicon. Here, we use atomic-resolution scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy to directly image and chemically characterize a series of EuO|Si and EuO|YAlO3 interfaces fabricated using different growth conditions. We identify the presence of europium silicides and regions of disorder at the EuO|Si interfaces, imperfections that could significantly reduce spin injection efficiencies via spin-flip scattering.
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Submitted 5 August, 2013;
originally announced August 2013.
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(Semi-)Riemannian geometry of (para-)octonionic projective planes
Authors:
Rowena Held,
Iva Stavrov,
Brian VanKoten
Abstract:
We use reduced homogeneous coordinates to study Riemannian geometry of the octonionic (or Cayley) projective plane. Our method extends to the para-octonionic (or split octonionic) projective plane, the octonionic projective plane of indefinite signature, and the hyperbolic dual of the octonionic projective plane; we discuss these manifolds in the later sections of the paper.
We use reduced homogeneous coordinates to study Riemannian geometry of the octonionic (or Cayley) projective plane. Our method extends to the para-octonionic (or split octonionic) projective plane, the octonionic projective plane of indefinite signature, and the hyperbolic dual of the octonionic projective plane; we discuss these manifolds in the later sections of the paper.
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Submitted 21 February, 2007;
originally announced February 2007.
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New Memory Concept for Superconducting Electronics
Authors:
R. Held,
J. Xu,
A. Schmehl,
C. W. Schneider,
J. Mannhart,
M. R. Beasley
Abstract:
A new concept for nonvolatile superconducting memories is proposed. The devices combine ferromagnetic dots for the storage of the data and Josephson junctions for their readout. Good scalability is expected for large scale integration. First memory cells have been implemented using 3 $μ$m-Nb-technology and permalloy dots. Nonvolatile data storage at 300 K was demonstrated.
A new concept for nonvolatile superconducting memories is proposed. The devices combine ferromagnetic dots for the storage of the data and Josephson junctions for their readout. Good scalability is expected for large scale integration. First memory cells have been implemented using 3 $μ$m-Nb-technology and permalloy dots. Nonvolatile data storage at 300 K was demonstrated.
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Submitted 27 June, 2005; v1 submitted 24 June, 2005;
originally announced June 2005.
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Electronic Transport through YBCO Grain Boundary Interfaces between 4.2 K and 300 K
Authors:
C. W. Schneider,
S. Hembacher,
G. Hammerl,
R. Held,
A. Schmehl,
A. Weber,
T. Kopp,
J. Mannhart
Abstract:
The current-induced dissipation in YBCO grain boundary tunnel junctions has been measured between 4.2 K and 300 K. It is found that the resistance of 45 degree (100)/(110) junctions decreases linearly by a factor of four when their temperature is increased from 100 K to 300 K. At the superconducting transition temperature Tc the grain boundary resistance of the normal state and of the supercondu…
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The current-induced dissipation in YBCO grain boundary tunnel junctions has been measured between 4.2 K and 300 K. It is found that the resistance of 45 degree (100)/(110) junctions decreases linearly by a factor of four when their temperature is increased from 100 K to 300 K. At the superconducting transition temperature Tc the grain boundary resistance of the normal state and of the superconducting state extrapolate to the same value.
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Submitted 19 November, 2003; v1 submitted 18 July, 2003;
originally announced July 2003.
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On the Problems of Hazardous Matter and Radiation at Faster than Light Speeds in the Warp Drive Space-Time
Authors:
C. B. Hart,
R. Held,
P. K. Hoiland,
S. Jenks,
F. Loup,
D. Martins,
J. Nyman,
J. P. Pertierra,
P. A. Santos,
M. A. Shore,
R. Sims,
M. Stabno,
T. O. M. Teage
Abstract:
The problems of hazardous radiation and collisions with matter on a warp driven ship pose considerable obstacles to this possibility for interstellar travel. A solution to these problems lies in the Broeck metric. It is demonstrated that both threats to the ship will be greatly reduced. It is also shown that the horizon problem no longer exists.
The problems of hazardous radiation and collisions with matter on a warp driven ship pose considerable obstacles to this possibility for interstellar travel. A solution to these problems lies in the Broeck metric. It is demonstrated that both threats to the ship will be greatly reduced. It is also shown that the horizon problem no longer exists.
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Submitted 27 July, 2002;
originally announced July 2002.
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A causally connected superluminal Warp Drive spacetime
Authors:
F. Loup,
R. Held,
D. Waite,
E. Halerewicz, Jr.,
M. Stabno,
M. Kuntzman,
R. Sims
Abstract:
It will be shown that while horizons do not exist for warp drive spacetimes traveling at subluminal velocities horizons begin to develop when a warp drive spacetime reaches luminal velocities. However it will be shown that the control region of a warp drive ship lie within the portion of the warped region that is still causally connected to the ship even at superluminal velocities, therefore all…
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It will be shown that while horizons do not exist for warp drive spacetimes traveling at subluminal velocities horizons begin to develop when a warp drive spacetime reaches luminal velocities. However it will be shown that the control region of a warp drive ship lie within the portion of the warped region that is still causally connected to the ship even at superluminal velocities, therefore allowing a ship to slow to subluminal velocities. Further it is shown that the warped regions which are causally disconnected from a warp ship have no correlation to the ship velocity.
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Submitted 6 February, 2002;
originally announced February 2002.
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Analysis of the temperature-dependent quantum point contact conductance in view of the metal-insulator transition in two dimensions
Authors:
V. Senz,
T. Heinzel,
T. Ihn,
S. Lindemann,
R. Held,
K. Ensslin,
W. Wegscheider,
M. Bichler
Abstract:
The temperature dependence of the conductance of a quantum point contact has been measured. The conductance as a function of the Fermi energy shows temperature-independent fixed points, located at roughly multiple integers of $e^{2}/h$. Around the first fixed point at e$^{2}$/h, the experimental data for different temperatures can been scaled onto a single curve. For pure thermal smearing of the…
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The temperature dependence of the conductance of a quantum point contact has been measured. The conductance as a function of the Fermi energy shows temperature-independent fixed points, located at roughly multiple integers of $e^{2}/h$. Around the first fixed point at e$^{2}$/h, the experimental data for different temperatures can been scaled onto a single curve. For pure thermal smearing of the conductance steps, a scaling parameter of one is expected. The measured scaling parameter, however, is significantly larger than 1. The deviations are interpreted as a signature of the potential landscape of the quantum point contact, and of the source-drain bias voltage. We relate our results phenomenologically to the metal-insulator transition in two dimensions.
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Submitted 13 December, 2000; v1 submitted 12 December, 2000;
originally announced December 2000.
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In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography
Authors:
S. Luescher,
A. Fuhrer,
R. Held,
T. Heinzel,
K. Ensslin,
W. Wegscheider
Abstract:
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional,…
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A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional, homogeneous top gate electrode. Pronounced Coulomb blockade oscillations are observed as a function of voltages applied to different gates. We find that, for positive top-gate voltages, the lithographic pattern is transferred with high accuracy to the electron gas. Furthermore, the dot shape does not change significantly when in-plane voltages are tuned.
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Submitted 23 September, 1999;
originally announced September 1999.
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Shifting a Quantum Wire through a Disordered Crystal: Observation of Conductance Fluctuations in Real Space
Authors:
T. Heinzel,
G. Salis,
R. Held,
S. Luescher,
K. Ensslin,
W. Wegscheider,
M. Bichler
Abstract:
A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their characteristic temperature scale is a few hundred millikelvin, indicating a phase-coherent effect. Each fluctuation corresponds to a single scatterer entering or l…
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A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their characteristic temperature scale is a few hundred millikelvin, indicating a phase-coherent effect. Each fluctuation corresponds to a single scatterer entering or leaving the wire. This way, scattering centers can be counted one by one.
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Submitted 23 September, 1999;
originally announced September 1999.
