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Measurement of the $\text{1}^\text{3}\text{S}_\text{1} \to \text{2}^\text{3}\text{S}_\text{1}$ interval in positronium using field-ionization of Rydberg states
Authors:
Michael W. Heiss,
Lucas de Sousa Borges,
Artem Golovizin,
Paolo Crivelli
Abstract:
We report a new 40 ppb measurement of the positronium $\text{1}^\text{3}\text{S}_\text{1} \to \text{2}^\text{3}\text{S}_\text{1}$ interval using pulsed two-photon optical spectroscopy. The transition is detected via field-ionization of atoms excited from the 2S to the 20P Rydberg state. Precise Monte-Carlo line-shape simulations allow for the accounting of effects such as Doppler and AC Stark shif…
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We report a new 40 ppb measurement of the positronium $\text{1}^\text{3}\text{S}_\text{1} \to \text{2}^\text{3}\text{S}_\text{1}$ interval using pulsed two-photon optical spectroscopy. The transition is detected via field-ionization of atoms excited from the 2S to the 20P Rydberg state. Precise Monte-Carlo line-shape simulations allow for the accounting of effects such as Doppler and AC Stark shifts, while an optical heterodyne measurement of the excitation laser pulse is used to correct for laser frequency chirp. A value of $1\,233\,607\,210.5\pm 49.6\, \mathrm{MHz}$ was obtained. This scheme allows for the measurement of the velocity distribution of positronium atoms to correct for the second-order Doppler effect. This is the major source of systematic uncertainty expected for future measurements of this transition with a CW laser, thus, our technique paves the way toward a new generation of a high precision determination of this interval in positronium.
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Submitted 2 July, 2024;
originally announced July 2024.
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Proof of Principle for Ramsey-type Gravity Resonance Spectroscopy with qBounce
Authors:
René I. P. Sedmik,
Joachim Bosina,
Lukas Achatz,
Peter Geltenbort,
Manuel Heiß,
Andrey N. Ivanov,
Tobias Jenke,
Jakob Micko,
Mario Pitschmann,
Tobias Rechberger,
Patrick Schmidt,
Martin Thalhammer,
Hartmut Abele
Abstract:
Ultracold neutrons (UCNs) are formidable probes in precision tests of gravity. With their negligible electric charge, dielectric moment, and polarizability they naturally evade some of the problems plaguing gravity experiments with atomic or macroscopic test bodies. Taking advantage of this fact, the qBounce collaboration has developed a technique - gravity resonance spectroscopy (GRS) - to study…
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Ultracold neutrons (UCNs) are formidable probes in precision tests of gravity. With their negligible electric charge, dielectric moment, and polarizability they naturally evade some of the problems plaguing gravity experiments with atomic or macroscopic test bodies. Taking advantage of this fact, the qBounce collaboration has developed a technique - gravity resonance spectroscopy (GRS) - to study bound quantum states of UCN in the gravity field of the Earth. This technique is used as a high-precision tool to search for hypothetical Non-Newtonian gravity on the micrometer scale. In the present article, we describe the recently commissioned Ramsey-type GRS setup, give an unambiguous proof of principle, and discuss possible measurements that will be performed.
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Submitted 26 August, 2019;
originally announced August 2019.
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Excitation of positronium from 2S to 20P state
Authors:
M. W. Heiss,
G. Wichmann,
B. Radics,
P. Crivelli
Abstract:
We report the observation of positronium excitation from the 2S to the 20P state. The Rydberg positronium atoms fly a distance of 40 mm before being field ionized and detected in a micro-channel plate. The time of flight can thus be measured and the velocity distribution of the atoms excited in the 2S state is reconstructed. This is used as an input to the model of the line-shape in order to prope…
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We report the observation of positronium excitation from the 2S to the 20P state. The Rydberg positronium atoms fly a distance of 40 mm before being field ionized and detected in a micro-channel plate. The time of flight can thus be measured and the velocity distribution of the atoms excited in the 2S state is reconstructed. This is used as an input to the model of the line-shape in order to properly take into account the second order Doppler shift which is the main systematic uncertainty in the 1S-2S measurements of positronium.
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Submitted 20 September, 2018;
originally announced September 2018.
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The positronium hyperfine structure: Progress towards a direct measurement of the $\text{2}^\text{3}\text{S}_\text{1} \rightarrow \text{2}^\text{1}\text{S}_\text{0}$ transition in vacuum
Authors:
M. Heiss,
G. Wichmann,
A. Rubbia,
P. Crivelli
Abstract:
We present the current status for the direct measurement of the positronium hyperfine structure using the $\text{2}^\text{3}\text{S}_\text{1} \rightarrow \text{2}^\text{1}\text{S}_\text{0}$ transition. This experiment, currently being commissioned at the slow positron beam facility at ETH Zurich, will be the first measurement of this transition and the first positronium hyperfine splitting experim…
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We present the current status for the direct measurement of the positronium hyperfine structure using the $\text{2}^\text{3}\text{S}_\text{1} \rightarrow \text{2}^\text{1}\text{S}_\text{0}$ transition. This experiment, currently being commissioned at the slow positron beam facility at ETH Zurich, will be the first measurement of this transition and the first positronium hyperfine splitting experiment conducted in vacuum altogether. This experiment will be free of systematic effects found in earlier experiments, namely the inhomogeneity in static magnetic fields and the extrapolation from dense gases to vacuum. The achievable precision is expected to be on the order of $10\, \mathrm{ppm}$ while the systematic uncertainty is estimated to be within a few $\mathrm{ppm}$. This would allow to check recent bound state QED calculations and a $3$-$σ$ discrepancy with earlier experiments.
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Submitted 14 June, 2018; v1 submitted 15 May, 2018;
originally announced May 2018.
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The anti-proton charge radius
Authors:
P. Crivelli,
D. Cooke,
M. W. Heiss
Abstract:
The upcoming operation of the Extra Low ENergy Antiprotons (ELENA) ring at CERN, the upgrade of the anti-proton decelerator (AD), and the installation in the AD hall of an intense slow positron beam with an expected flux of $10^{8}$ e$^+$/s will open the possibility for new experiments with anti-hydrogen ($\bar{\text{H}}$). Here we propose a scheme to measure the Lamb shift of $\bar{\text{H}}$. Fo…
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The upcoming operation of the Extra Low ENergy Antiprotons (ELENA) ring at CERN, the upgrade of the anti-proton decelerator (AD), and the installation in the AD hall of an intense slow positron beam with an expected flux of $10^{8}$ e$^+$/s will open the possibility for new experiments with anti-hydrogen ($\bar{\text{H}}$). Here we propose a scheme to measure the Lamb shift of $\bar{\text{H}}$. For a month of data taking, we anticipate an uncertainty of 100 ppm. This will provide a test of CPT and the first determination of the anti-proton charge radius at the level of 10%.
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Submitted 6 July, 2016; v1 submitted 20 June, 2016;
originally announced June 2016.
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Exciton Footprint of Self-assembled AlGaAs Quantum Dots in Core-Shell Nanowires
Authors:
Yannik Fontana,
Pierre Corfdir,
Barbara Van Hattem,
Eleonora Russo-Averchi,
Martin Heiss,
Samuel Sonderegger,
Cesar Magen,
Jordi Arbiol,
Richard T. Phillips,
Anna Fontcuberta i Morral
Abstract:
Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots nested in the shell of GaAs-AlGaAs core-shell nanowires. We used optical spectroscopy to resolve the splitting resulting from the exchange terms and ext…
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Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots nested in the shell of GaAs-AlGaAs core-shell nanowires. We used optical spectroscopy to resolve the splitting resulting from the exchange terms and extract the main parameters of the emitters. Our results indicate that the quantum dots can host neutral as well as charges excitonic complexes and that the excitons exhibit a slightly elongated footprint, with the main axis tilted with respect to the growth axis. GaAs-AlGaAs emitters in a nanowire are particularly promising for overcoming the limitations set by strain in other systems, with the benefit of being integrated in a versatile photonic structure.
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Submitted 23 July, 2014; v1 submitted 1 June, 2014;
originally announced June 2014.
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Quantum dot opto-mechanics in a fully self-assembled nanowire
Authors:
M. Montinaro,
G. Wüst,
M. Munsch,
Y. Fontana,
E. Russo-Averchi,
M. Heiss,
A. Fontcuberta i Morral,
R. J. Warburton,
M. Poggio
Abstract:
We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad range exceeding 14 meV. Furthermore, this opto-mechanical interaction enables the dynamical tuning of two neighboring QDs into resonance, possibly allowing for em…
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We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad range exceeding 14 meV. Furthermore, this opto-mechanical interaction enables the dynamical tuning of two neighboring QDs into resonance, possibly allowing for emitter-emitter coupling. Both the QDs and the coupling mechanism -- material strain -- are intrinsic to the NW structure and do not depend on any functionalization or external field. Such systems open up the prospect of using QDs to probe and control the mechanical state of a NW, or conversely of making a quantum non-demolition readout of a QD state through a position measurement.
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Submitted 12 May, 2014;
originally announced May 2014.
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Electrical transport in C-doped GaAs nanowires: surface effects
Authors:
Alberto Casadei,
Jil Schwender,
Eleonora Russo-Averchi,
Daniel Rüffer,
Martin Heiss,
Esther Alarcó-Lladó,
Fauzia Jabeen,
Mohammad Ramezani,
Kornelius Nielsch,
Anna Fontcuberta I Morral
Abstract:
The resistivity and the mobility of Carbon doped GaAs nanowires have been studied for different do** concentrations. Surface effects have been evaluated by comparing upassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm^2/(V*s) for dopin…
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The resistivity and the mobility of Carbon doped GaAs nanowires have been studied for different do** concentrations. Surface effects have been evaluated by comparing upassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm^2/(V*s) for do** concentrations lower than 3*10^18 cm^-3. Electron beam induced current measurements show that the minority carrier diffusion path can be as high as 190 nm for passivated nanowires.
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Submitted 22 April, 2013;
originally announced April 2013.
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Single nanowire solar cells beyond the Shockley-Queisser limit
Authors:
Peter Krogstrup,
Henrik Ingerslev Jørgensen,
Martin Heiss,
Olivier Demichel,
Jeppe V. Holm,
Martin Aagesen,
Jesper Nygard,
Anna Fontcuberta i Morral
Abstract:
Light management is of great importance to photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal pn-junction combined with an optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar ce…
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Light management is of great importance to photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal pn-junction combined with an optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At one sun illumination a short circuit current of 180 mA/cm^2 is obtained, which is more than one order of magnitude higher than what would be predicted from Lambert-Beer law. The enhanced light absorption is shown to be due to a light concentrating property of the standing nanowire as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under one sun illumination.
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Submitted 6 January, 2013;
originally announced January 2013.
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Do** incorporation paths in catalyst-free Be-doped GaAs nanowires
Authors:
Alberto Casadei,
Peter Krogstrup,
Martin Heiss,
Jason A. Röhr,
Carlo Colombo,
Thibaud Ruelle,
Shivendra Upadhyay,
Claus B. Sørensen,
Jesper Nygård,
Anna Fontcuberta i Morral
Abstract:
The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different do** profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also demonstrate that Be can diffuse into the volum…
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The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different do** profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also demonstrate that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled do** of nanowires and will serve as a help for designing future devices based on nanowires.
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Submitted 5 October, 2012;
originally announced October 2012.
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Determination of the bandgap and split-off band of wurtzite GaAs
Authors:
Bernt Ketterer,
Martin Heiss,
Marie J. Livrozet,
Elisabeth Reiger,
Anna Fontcuberta i Morral
Abstract:
GaAs nanowires with a 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1…
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GaAs nanowires with a 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of GaAs wurtzite below 1.523 eV.
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Submitted 11 February, 2011;
originally announced February 2011.
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Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Authors:
Martin Heiß,
Sonia Conesa-Boj,
Jun Ren,
Hsiang-Han Tseng,
Adam Gali,
Andreas Rudolph,
Emanuele Uccelli,
Francesca Peiro,
Joan Ramon Morante,
Dieter Schuh,
Elisabeth Reiger,
Efthimios Kaxiras,
Jordi Arbiol,
Anna Fontcuberta i Morral
Abstract:
A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In…
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A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the bulk GaAs band gap, while regions composed of a nonperiodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to determine the band alignment between these two crystalline phases. Our first-principles electronic structure calculations within density functional theory, employing a hybrid-exchange functional, predict band offsets and effective masses in good agreement with experimental results.
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Submitted 23 November, 2010;
originally announced November 2010.
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Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots
Authors:
Martin Heiß,
Bernt Ketterer,
Emanuele Uccelli,
Joan Ramon Morante,
Jordi Arbiol,
Anna Fontcuberta i Morral
Abstract:
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and elec…
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Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium lowering the growth temperature does not have an effect in increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575°C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit extremely sharp luminescence.
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Submitted 23 November, 2010;
originally announced November 2010.
