Showing 1–6 of 6 results for author: Heersche, H B

Aharonov-Bohm effect in graphene

Authors: Saverio Russo, Jeroen B. Oostinga, Dominique Wehenkel, Hubert B. Heersche, Samira Shams Sobhani, Lieven M. K. Vandersypen, Alberto F. Morpurgo

Abstract: We investigate experimentally transport through ring-shaped devices etched in graphene and observe clear Aharonov-Bohm conductance oscillations. The temperature dependence of the oscillation amplitude indicates that below 1 K the phase coherence length is comparable to or larger than the size of the ring. An increase in the amplitude is observed at high magnetic field, when the cyclotron diamete… ▽ More We investigate experimentally transport through ring-shaped devices etched in graphene and observe clear Aharonov-Bohm conductance oscillations. The temperature dependence of the oscillation amplitude indicates that below 1 K the phase coherence length is comparable to or larger than the size of the ring. An increase in the amplitude is observed at high magnetic field, when the cyclotron diameter becomes comparable to the width of the arms of the ring. By measuring the dependence on gate voltage, we also observe an unexpected linear dependence of the oscillation amplitude on the ring conductance, which had not been reported earlier in rings made using conventional metals or semiconducting heterostructures. △ Less

Submitted 9 November, 2007; originally announced November 2007.

Comments: 14 pages, 5 figures

Journal ref: Phys. Rev. B 77, 085413 (2010)

Gate-induced insulating state in bilayer graphene devices

Authors: Jeroen B. Oostinga, Hubert B. Heersche, Xinglan Liu, Alberto F. Morpurgo, Lieven M. K. Vandersypen

Abstract: The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means of gate electrod… ▽ More The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means of gate electrodes, which is made difficult by the absence of a bandgap in the intrinsic material. Here, we demonstrate the controlled induction of an insulating state - with large suppression of the conductivity - in bilayer graphene, by using a double-gate device configuration that allows an electric field to be applied perpendicular to the plane. The dependence of the resistance on temperature and electric field, and the absence of any effect in a single-layer device, strongly suggest that the gate-induced insulating state originates from the recently predicted opening of a bandgap between valence and conduction bands. △ Less

Submitted 4 December, 2007; v1 submitted 17 July, 2007; originally announced July 2007.

Comments: 17 pages, 5 figures

Journal ref: Nature Materials, published online 2 dec 2007

Bipolar supercurrent in graphene

Authors: Hubert B. Heersche, Pablo Jarillo-Herrero, Jeroen B. Oostinga, Lieven M. K. Vandersypen, Alberto F. Morpurgo

Abstract: Graphene -a recently discovered one-atom-thick layer of graphite- constitutes a new model system in condensed matter physics, because it is the first material in which charge carriers behave as massless chiral relativistic particles. The anomalous quantization of the Hall conductance, which is now understood theoretically, is one of the experimental signatures of the peculiar transport propertie… ▽ More Graphene -a recently discovered one-atom-thick layer of graphite- constitutes a new model system in condensed matter physics, because it is the first material in which charge carriers behave as massless chiral relativistic particles. The anomalous quantization of the Hall conductance, which is now understood theoretically, is one of the experimental signatures of the peculiar transport properties of relativistic electrons in graphene. Other unusual phenomena, like the finite conductivity of order 4e^2/h at the charge neutrality (or Dirac) point, have come as a surprise and remain to be explained. Here, we study the Josephson effect in graphene. Our experiments rely on mesoscopic superconducting junctions consisting of a graphene layer contacted by two closely spaced superconducting electrodes, where the charge density can be controlled by means of a gate electrode. We observe a supercurrent that, depending on the gate voltage, is carried by either electrons in the conduction band or by holes in the valence band. More importantly, we find that not only the normal state conductance of graphene is finite, but also a finite supercurrent can flow at zero charge density. Our observations shed light on the special role of time reversal symmetry in graphene and constitute the first demonstration of phase coherent electronic transport at the Dirac point. △ Less

Submitted 6 December, 2006; v1 submitted 5 December, 2006; originally announced December 2006.

Comments: Under review, 12 pages, 4 Figs., suppl. info (v2 identical, resolved file problems)

Journal ref: Nature 446, 56-59 (1 March 2007)

Electron transport through single Mn12 molecular magnets

Authors: H. B. Heersche, Z. de Groot, J. A. Folk, H. S. J. van der Zant, C. Romeike, M. R. Wegewijs, L. Zobbi, D. Barreca, E. Tondello, A. Cornia

Abstract: We report transport measurements through a single-molecule magnet, the Mn12 derivative [Mn12O12(O2C-C6H4-SAc)16(H2O)4], in a single-molecule transistor geometry. Thiol groups connect the molecule to gold electrodes that are fabricated by electromigration. Striking observations are regions of complete current suppression and excitations of negative differential conductance on the energy scale of… ▽ More We report transport measurements through a single-molecule magnet, the Mn12 derivative [Mn12O12(O2C-C6H4-SAc)16(H2O)4], in a single-molecule transistor geometry. Thiol groups connect the molecule to gold electrodes that are fabricated by electromigration. Striking observations are regions of complete current suppression and excitations of negative differential conductance on the energy scale of the anisotropy barrier of the molecule. Transport calculations, taking into account the high-spin ground state and magnetic excitations of the molecule, reveal a blocking mechanism of the current involving non-degenerate spin multiplets. △ Less

Submitted 29 March, 2006; v1 submitted 27 October, 2005; originally announced October 2005.

Comments: Accepted for Phys. Rev. Lett., 5 pages, 4 figures

The Kondo Effect in the Presence of Magnetic Impurities

Authors: H. B. Heersche, Z. de Groot, J. A. Folk, L. P. Kouwenhoven, H. S. J. van der Zant, A. A. Houck, J. Labaziewicz, I. L. Chuang

Abstract: We measure transport through gold grain quantum dots fabricated using electromigration, with magnetic impurities in the leads. A Kondo interaction is observed between dot and leads, but the presence of magnetic impurities results in a gate-dependent zero-bias conductance peak that is split due to an RKKY interaction between the spin of the dot and the static spins of the impurities. A magnetic f… ▽ More We measure transport through gold grain quantum dots fabricated using electromigration, with magnetic impurities in the leads. A Kondo interaction is observed between dot and leads, but the presence of magnetic impurities results in a gate-dependent zero-bias conductance peak that is split due to an RKKY interaction between the spin of the dot and the static spins of the impurities. A magnetic field restores the single Kondo peak in the case of an antiferromagnetic RKKY interaction. This system provides a new platform to study Kondo and RKKY interactions in metals at the level of a single spin. △ Less

Submitted 17 August, 2005; originally announced August 2005.

Comments: 5 pages, 4 figures

Electrical detection of spin accumulation and spin precession at room temperature in metallic spin valves

Authors: F. J. Jedema, M. V. Costache, H. B. Heersche, J. J. A. Baselmans, B. J. van Wees

Abstract: We have fabricated a multi terminal lateral mesoscopic metallic spin valve demonstrating spin precession at room temperature, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The observed modulation of the output signal due to the spin precession is discussed and explained in terms of a time of flight experiment of electrons in a diffusiv… ▽ More We have fabricated a multi terminal lateral mesoscopic metallic spin valve demonstrating spin precession at room temperature, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The observed modulation of the output signal due to the spin precession is discussed and explained in terms of a time of flight experiment of electrons in a diffusive conductor. The obtained spin relaxation length lambda_{sf}=500 nm in an Al strip will make possible detailed studies of spin dependent transport phenomena and allow to explore the possibilities of the electron spin for new electronic applications at RT. △ Less

Submitted 29 July, 2002; originally announced July 2002.

Comments: 3 pages, 3 figures, revtex, submitted to APL