Showing 1–38 of 38 results for author: Hebard, A F

Magnetic molecule tunnel heterojunctions

Authors: Xuanyuan Jiang, Andrew Brooks, Shuanglong Liu, John Koptur-Palenchar, Yundi Quan, Richard G. Hennig, Hai-** Cheng, Xiaoguang Zhang, Arthur F. Hebard

Abstract: We characterize molecular magnet heterojunctions in which sublimated CoPc films as thin as 5 nm are sandwiched between transparent conducting bottom-layer indium tin oxide and top-layer soft-landing eutectic GaIn (EGaIn) electrodes. The roughness of the cobalt phthalocyanine (CoPc) films was determined by atomic force microscopy to be on the order of several nanometers, and crystalline ordering of… ▽ More We characterize molecular magnet heterojunctions in which sublimated CoPc films as thin as 5 nm are sandwiched between transparent conducting bottom-layer indium tin oxide and top-layer soft-landing eutectic GaIn (EGaIn) electrodes. The roughness of the cobalt phthalocyanine (CoPc) films was determined by atomic force microscopy to be on the order of several nanometers, and crystalline ordering of lying-down planar molecules was confirmed by X-ray diffraction. The current-voltage (I-V) characteristics reveal the onset of a superconducting gap at Tc = 6 K, which together with higher temperature fits to a modified Simmons' model, provide incontrovertible evidence for direct quantum mechanical tunneling processes through the magnetic molecules in our heterojunctions. The voltage dependent features in the differential conductance measurements relate to spin states of single molecules or aggregates of molecules and should prove to be important for quantum information device development. △ Less

Submitted 27 April, 2022; originally announced April 2022.

Comments: 14 pages, 5 figures

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe$_2$ and 2H-NbSe$_2$

Authors: Ang J. Li, Xiaochen Zhu, Daniel Rhodes, Christopher C. Samouce, Luis Balicas, Arthur F. Hebard

Abstract: Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe$_2$ and 2H-NbSe$_2$, harbor a second order charge density wave (CDW) transition where phonons play a key role for the periodic modulations of conduction electron densities and associated lattice distortions. We systematically study the transport and capacitance characteristics over a wide temperature range of Schottky barriers f… ▽ More Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe$_2$ and 2H-NbSe$_2$, harbor a second order charge density wave (CDW) transition where phonons play a key role for the periodic modulations of conduction electron densities and associated lattice distortions. We systematically study the transport and capacitance characteristics over a wide temperature range of Schottky barriers formed by intimately contacting freshly exfoliated flakes of 1T-TiSe$_2$ and 2H-NbSe$_2$ to \textit{n}-type GaAs semiconductor substrates. The extracted temperature-dependent parameters (zero-bias barrier height, ideality and built-in potential) reflect changes at the TMD/GaAs interface induced by CDW formation for both TMD materials. The measured built-in potential reveals chemical-potential shifts relating to CDW formation. With decreasing temperature a peak in the chemical-potential shifts during CDW evolution indicates a competition between electron energy re-distributions and a combination of lattice strain energies and Coulomb interactions. These modulations of chemical potential in CDW systems, such as 1T-TiSe$_2$ and 2H-NbSe$_2$ harboring second-order phase transitions, reflect a corresponding conversion from short to long-range order. △ Less

Submitted 25 August, 2017; originally announced August 2017.

Comments: 6 pages, 5 figures, accepted by Physical Review B

Detection of charge density wave phase transitions at 1T-TaS$_2$/GaAs interfaces

Authors: Xiaochen Zhu, Ang J. Li, G. R. Stewart, Arthur F. Hebard

Abstract: The transition metal dichalcogenide 1T-TaS$_2$ is well known to harbor a rich variety of charge density wave (CDW) distortions which are correlated with underlying lattice atom modulations. The long range CDW phases extend throughout the whole crystal and terminate with charge displacements at the crystal boundaries. Here we report on the transport properties and capacitance characteristics of the… ▽ More The transition metal dichalcogenide 1T-TaS$_2$ is well known to harbor a rich variety of charge density wave (CDW) distortions which are correlated with underlying lattice atom modulations. The long range CDW phases extend throughout the whole crystal and terminate with charge displacements at the crystal boundaries. Here we report on the transport properties and capacitance characteristics of the interface between freshly exfoliated flakes of 1T-TaS$_2$ in intimate van der Waals contact with \textit{n}-type GaAs substrates. The extracted barrier parameters (ideality, barrier height and built-in potential) experience pronounced changes across the Mott-CDW transition in the 1T-TaS$_2$. The CDW-induced changes in barrier properties are well described by a bond polarization model which upon decreasing temperature gives rise to an increased potential drop across the interfacial region due to the localization of carriers and a decreased dielectric constant. △ Less

Submitted 19 April, 2017; originally announced April 2017.

Comments: 17 Pages, 6 figures, Accepted by Applied Physics Letters

Bi-2212/1T-TaS$_2$ Van der Waals junctions: Interplay of proximity induced high-$T_c$ superconductivity and CDW order

Authors: Ang J. Li, Xiaochen Zhu, G. R. Stewart, Arthur F. Hebard

Abstract: Understanding the coexistence, competition and/or cooperation between superconductivity and charge density waves (CDWs) in the transition metal dichalcogenides (TMDs) is an elusive goal which, when realized, promises to reveal fundamental information on this important class of materials. Here, we use four-terminal current-voltage measurements to study the Van der Waals interface between freshly ex… ▽ More Understanding the coexistence, competition and/or cooperation between superconductivity and charge density waves (CDWs) in the transition metal dichalcogenides (TMDs) is an elusive goal which, when realized, promises to reveal fundamental information on this important class of materials. Here, we use four-terminal current-voltage measurements to study the Van der Waals interface between freshly exfoliated flakes of the high-$T_{c}$ superconductor, Bi-2212, and the CDW-dominated TMD layered material, 1T-TaS$_{2}$. For highly transparent barriers, there is a pronounced Andreev reflection feature providing evidence for proximity-induced high-$T_{c}$ superconductivity in 1T-TaS$_{2}$ with a surprisingly large energy gap ($\sim 20\thinspace $meV) equal to half that of intrinsic Bi-2212 ($\sim 40\thinspace $meV). Our systematic study using conductance spectroscopy of junctions with different transparencies also reveals the presence of two separate boson modes, each associated with a "dip-hump" structure. We infer that the proximity-induced high-$T_c$ superconductivity in the 1T-TaS$_2$ is driven by coupling to the metastable metallic phase coexisting within the Mott commensurate CDW (CCDW) phase and associated with a concomitant change of the CCDW order parameter in the interfacial region. △ Less

Submitted 20 June, 2017; v1 submitted 2 March, 2017; originally announced March 2017.

Comments: 27 pages, 11 figures

Temperature evolution of polaron dynamics and Jahn-Teller distortion modes in strongly correlated La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ manganite film

Authors: Naween Anand, Naveen Margankunte, Hyoungjeen Jeen, A. F. Hebard, Amlan Biswas, David B. Tanner

Abstract: Reflectivity as a function of temperature for the La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ (LCMO) film has been measured across the metal-insulator phase transition. The optical properties and their temperature dependence were determined in the infrared and visible range by fits to a Drude-Lorentz model, using exact formula for the thin film optics and the measured properties of the substrate. The phonon m… ▽ More Reflectivity as a function of temperature for the La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ (LCMO) film has been measured across the metal-insulator phase transition. The optical properties and their temperature dependence were determined in the infrared and visible range by fits to a Drude-Lorentz model, using exact formula for the thin film optics and the measured properties of the substrate. The phonon modes were identified and verified with lattice dynamical calculations for the ideal and distorted perovskite structure of the material. The optical conductivity shows agreement with the double exchange mechanism in conjunction with the Jahn-Teller distortion term in the Hamiltonian. Low temperature metallic phase is dominated by large polaron dynamics, a key component of electron-orbital coupling in a strongly corrrelated system. Free carrier dynamics in the metallic phase is described in terms of coherent heavy polaronic motion in the DC limit with incoherent and asymmetric polaronic background in the mid-IR range. The strength and line width of Jahn-Teller modes has been discussed across the phase transition and their temperature evolution is qualitatively discussed on account of existing electron-phonon coupling. The localized Holstein polaron formation in the high temperature insulative phase is identified as optical conductivity peaks in the visible range above the critical temperature. △ Less

Submitted 29 March, 2018; v1 submitted 8 December, 2015; originally announced December 2015.

Proximate transition temperatures amplify linear magnetoelectric coupling in strain-disordered multiferroic BiMnO3

Authors: Patrick R. Mickel, Hyoungjeen Jeen, Pradeep Kumar, Amlan Biswas, Arthur F. Hebard

Abstract: We report a giant linear magnetoelectric coupling in strained BiMnO3 thin films in which the disorder associated with an islanded morphology gives rise to extrinsic relaxor ferroelectricity that is not present in bulk centrosymmetric ferromagnetic crystalline BiMnO3. Strain associated with the disorder is treated as a local variable which couples to the two ferroic order parameters, magnetization… ▽ More We report a giant linear magnetoelectric coupling in strained BiMnO3 thin films in which the disorder associated with an islanded morphology gives rise to extrinsic relaxor ferroelectricity that is not present in bulk centrosymmetric ferromagnetic crystalline BiMnO3. Strain associated with the disorder is treated as a local variable which couples to the two ferroic order parameters, magnetization M and polarization P. A straightforward "gas under a piston" thermodynamic treatment explains the observed correlated temperature dependencies of the product of susceptibilities and the magnetoelectric coefficient together with the enhancement of the coupling by the proximity of the ferroic transition temperatures close to the relaxor freezing temperature. Our interpretation is based on a trilinear coupling term in the free energy of the form L(PXM) where L is a hidden antiferromagnetic order parameter, previously postulated by theory for BiMnO3. This phenomenological invariant not only preserves inversion and time reversal symmetry of the strain-induced interactions but also explains the pronounced linear magnetoelectric coupling without using the more conventional higher order biquadratic interaction proportional to (PM)^2. △ Less

Submitted 7 August, 2015; originally announced August 2015.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 93, 134205 (2016)

Far-infrared absorption of undoped and Br-doped carbon nanofiber powder in stacked-cup cone configuration

Authors: Naween Anand, A. F. Hebard, David B. Tanner

Abstract: We carried out room-temperature far-infrared (40--650~cm$^{-1}$) transmission measurements on undoped and bromine-doped powder samples of carbon nanofibers in stacked-cup cone geometry. The transmission spectra of both doped and undoped samples were fit to a Drude-Lorentz model. A single Drude component and a small bandgap (around 8~meV) semiconducting Lorentzian component along with 3 other Loren… ▽ More We carried out room-temperature far-infrared (40--650~cm$^{-1}$) transmission measurements on undoped and bromine-doped powder samples of carbon nanofibers in stacked-cup cone geometry. The transmission spectra of both doped and undoped samples were fit to a Drude-Lorentz model. A single Drude component and a small bandgap (around 8~meV) semiconducting Lorentzian component along with 3 other Lorentz components were essential to get a good fit in the entire measured frequency range. A decreased metallic conductivity along with a red-shift of the lowest semiconducting gap was found after bromine do**. A significant decrease in the scattering rate upon heavy do** has been qualitatively explained as partial ordering of intercalated dopant ions. Absorption spectra were derived from the transmission spectra under the assumption of non-dispersive reflectance. These spectra were compared to Drude-Lorentz model absorption spectra. The free-carrier density of the n-type powder and the electronic mean free path were estimated and compared with previously reported values for single-walled nanotubes and pyrolytic graphite. △ Less

Submitted 19 April, 2018; v1 submitted 22 June, 2015; originally announced June 2015.

Unusual Shubnikov-de Haas oscillations in BiTeCl

Authors: C. Martin, A. V. Suslov, S. Buvaev, A. F. Hebard, P. Bugnon, H. Berger, A. Magrez, D. B. Tanner

Abstract: We report measurements of Shubnikov-de Haas (SdH) oscillations in single crystals of BiTeCl at magnetic fields up to 31 T and at temperatures as low as 0.4 K. Two oscillation frequencies were resolved at the lowest temperatures, $F_{1}=65 \pm 4$ Tesla and $F_{2}=156 \pm 5$ Tesla. We also measured the infrared optical reflectance $\left(\cal R(ω)\right)$ and Hall effect; we propose that the two fre… ▽ More We report measurements of Shubnikov-de Haas (SdH) oscillations in single crystals of BiTeCl at magnetic fields up to 31 T and at temperatures as low as 0.4 K. Two oscillation frequencies were resolved at the lowest temperatures, $F_{1}=65 \pm 4$ Tesla and $F_{2}=156 \pm 5$ Tesla. We also measured the infrared optical reflectance $\left(\cal R(ω)\right)$ and Hall effect; we propose that the two frequencies correspond respectively to the inner and outer Fermi sheets of the Rashba spin-split bulk conduction band. The bulk carrier concentration was $n_{e}\approx1\times10^{19}$ cm$^{-3}$ and the effective masses $m_{1}^{*}=0.20 m_{0}$ for the inner and $m_{2}^{*}=0.27 m_{0}$ for the outer sheet. Surprisingly, despite its low effective mass, we found that the amplitude of $F_{2}$ is very rapidly suppressed with increasing temperature, being almost undetectable above $T\approx4$ K. △ Less

Submitted 24 July, 2014; originally announced July 2014.

Temperature-driven band inversion in Pb$_{0.77}$Sn$_{0.23}$Se: Optical and Hall-effect studies

Authors: Naween Anand, Zhiguo Chen, Sanal Buvaev, Kamal Choudhary, C. Martin, Genda Gu, S. B. Sinnott, Zhiqiang Li, A. F. Hebard, D. B. Tanner

Abstract: Optical and Hall-effect measurements have been performed on single crystals of Pb$_{0.77}$Sn$_{0.23}$Se, a IV-VI mixed chalcogenide. The temperature dependent (10--300 K) reflectance was measured over 40--7000 cm$^{-1}$ (5--870 meV) with an extension to 15,500 cm$^{-1}$ (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lore… ▽ More Optical and Hall-effect measurements have been performed on single crystals of Pb$_{0.77}$Sn$_{0.23}$Se, a IV-VI mixed chalcogenide. The temperature dependent (10--300 K) reflectance was measured over 40--7000 cm$^{-1}$ (5--870 meV) with an extension to 15,500 cm$^{-1}$ (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy optical spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density function theory calculation for the electronic band structure also make similar predictions. △ Less

Submitted 22 July, 2014; originally announced July 2014.

Comments: 10 pages, 15 figures

Journal ref: Phys. Rev. B 90, 235143 (2014)

Bulk Fermi surface and electronic properties of Cu$_{0.07}$Bi$_{2}$Se$_{3}$

Authors: C. Martin, V. Craciun, K. H. Miller, B. Uzakbaiuly, S. Buvaev, H. Berger, A. F. Hebard, D. B. Tanner

Abstract: The electronic properties of Cu$_{0.07}$Bi$_{2}$Se$_{3}$ have been investigated using Shubnikov-de Haas and optical reflectance measurements. Quantum oscillations reveal a bulk, three-dimensional Fermi surface with anisotropy $k^{c}_{F}/k^{ab}_{F}\approx$ 2 and a modest increase in free-carrier concentration and in scattering rate with respect to the undoped Bi$_{2}$Se$_{3}$, also confirmed by ref… ▽ More The electronic properties of Cu$_{0.07}$Bi$_{2}$Se$_{3}$ have been investigated using Shubnikov-de Haas and optical reflectance measurements. Quantum oscillations reveal a bulk, three-dimensional Fermi surface with anisotropy $k^{c}_{F}/k^{ab}_{F}\approx$ 2 and a modest increase in free-carrier concentration and in scattering rate with respect to the undoped Bi$_{2}$Se$_{3}$, also confirmed by reflectivity data. The effective mass is almost identical to that of Bi$_{2}$Se$_{3}$. Optical conductivity reveals a strong enhancement of the bound impurity bands with Cu addition, suggesting that a significant number of Cu atoms enter the interstitial sites between Bi and Se layers or may even substitute for Bi. This conclusion is also supported by X-ray diffraction measurements, where a significant increase of microstrain was found in Cu$_{0.07}$Bi$_{2}$Se$_{3}$, compared to Bi$_{2}$Se$_{3}$. △ Less

Submitted 7 May, 2013; originally announced May 2013.

Comments: Accepted to Phys. Rev B (R)

Temperature dependent infrared spectroscopy of the Rashba spin-splitting semiconductor BiTeI

Authors: C. Martin, K. H. Miller, S. Buvaev, H. Berger, X. S. Xu, A. F. Hebard, D. B. Tanner

Abstract: We performed temperature dependent infrared spectroscopy measurements on BiTeI single crystals, which exhibit large Rashba spin-splitting. Similar to a previous optical study, we found electronic excitations in good agreement with spin-split electronic bands. In addition, we report a low energy intraband transition with an onset energy of about 40 meV and an unexpectedly large number of vibrationa… ▽ More We performed temperature dependent infrared spectroscopy measurements on BiTeI single crystals, which exhibit large Rashba spin-splitting. Similar to a previous optical study, we found electronic excitations in good agreement with spin-split electronic bands. In addition, we report a low energy intraband transition with an onset energy of about 40 meV and an unexpectedly large number of vibrational modes in the far-infrared spectral region. At least some of the modes have asymmetric Fano line-shape. These new observations cannot be explained considering only the bulk band structure or crystal symmetry of BiTeI, and we proposed that the optical response is also affected by the surface topology. △ Less

Submitted 7 September, 2012; originally announced September 2012.

High Efficiency Graphene Solar Cells by Chemical Do**

Authors: Xiaochang Miao, Sefaattin Tongay, Maureen K. Petterson, Kara Berke, Andrew G. Rinzler, Bill R. Appleton, Arthur F. Hebard

Abstract: We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by do** the graphene with bis(trifluoromethanesulfonyl)amide, exceeds the native(undoped) device performance by a factor of 4.5 and the best previously reported PCE in similar devices by a factor of nearly 6. Current… ▽ More We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by do** the graphene with bis(trifluoromethanesulfonyl)amide, exceeds the native(undoped) device performance by a factor of 4.5 and the best previously reported PCE in similar devices by a factor of nearly 6. Current-voltage, capacitance-voltage and external quantum efficiency measurements show the enhancement to be due to the do** induced shift in the graphene chemical potential which increases the graphene carrier density (decreasing the cell series resistance) and increases the built-in potential. △ Less

Submitted 3 September, 2012; originally announced September 2012.

Comments: 14 pages, 5 figures

Journal ref: Nano Letter, 12, 2745(2012)

Competing `soft' dielectric phases and detailed balance in thin film manganites

Authors: Patrick R. Mickel, Amlan Biswas, Arthur F. Hebard

Abstract: Using frequency dependent complex capacitance measurements on thin films of the mixed-valence manganite (La$_{1-y}$Pr$_{y}$)$_{1-x}$Ca$_{x}$MnO$_{3}$, we identify and resolve the individual dielectric responses of two competing dielectric phases. We characterize their competition over a large temperature range, revealing they are in dynamic competition both spatially and temporally. The phase comp… ▽ More Using frequency dependent complex capacitance measurements on thin films of the mixed-valence manganite (La$_{1-y}$Pr$_{y}$)$_{1-x}$Ca$_{x}$MnO$_{3}$, we identify and resolve the individual dielectric responses of two competing dielectric phases. We characterize their competition over a large temperature range, revealing they are in dynamic competition both spatially and temporally. The phase competition is shown to be governed by the thermodynamic constraints imposed by detailed balance. The consequences of the detailed balance model strongly support the notion of an `electronically soft' material in which continuous conversions between dielectric phases with comparable free energies occur on time scales that are long compared with electron-phonon scattering times. △ Less

Submitted 5 November, 2011; originally announced November 2011.

Comments: 8 pages, 7 figures

Journal ref: Physical Review B 86, 094410 (2012)

Ultrapure Multilayer Graphene in Bromine Intercalated Graphite

Authors: J. Hwang, J. P. Carbotte, S. Tongay, A. F. Hebard, D. B. Tanner

Abstract: We investigate the optical properties of bromine intercalated highly orientated pyrolytic graphite (Br-HOPG) and provide a novel interpretation of the data. We observe new absorption features below 620 meV which are absent in the absorption spectrum of graphite. Comparing our results with those of theoretical studies on graphite, single and bilayer graphene as well as recent optical studies of mul… ▽ More We investigate the optical properties of bromine intercalated highly orientated pyrolytic graphite (Br-HOPG) and provide a novel interpretation of the data. We observe new absorption features below 620 meV which are absent in the absorption spectrum of graphite. Comparing our results with those of theoretical studies on graphite, single and bilayer graphene as well as recent optical studies of multilayer graphene, we conclude that Br-HOPG contains the signatures of ultrapure bilayer, single layer graphene, and graphite. The observed supermetallic conductivity of Br-HOPG is identified with the presence of very high mobility (~ 121,000 cm2V-1s-1 at room temperature and at very high carrier density) multilayer graphene components in our sample. This could provide a new avenue for single and multilayer graphene research. △ Less

Submitted 1 June, 2011; originally announced June 2011.

Comments: 5 pages, 3 figures

Journal ref: Physical Review B 84, 041410(R) (2011)

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes

Authors: S. Tongay, M. Lemaitre, X. Miao, B. Gila, B. R. Appleton, A. F. Hebard

Abstract: Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and conventional semiconductors. When chemical vapor deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC and GaN semiconducto… ▽ More Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and conventional semiconductors. When chemical vapor deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC and GaN semiconductor substrates, there is a strong van der Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky) barrier. Thermionic emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications, such as to sensors where in forward bias there is exponential sensitivity to changes in the Schottky barrier height due to the presence of absorbates on the graphene or to analogue devices for which Schottky barriers are integral components are promising because of graphene's mechanical stability, its resistance to diffusion, its robustness at high temperatures and its demonstrated capability to embrace multiple functionalities. △ Less

Submitted 23 March, 2012; v1 submitted 24 May, 2011; originally announced May 2011.

Comments: 10 pages, 7 figures, 1 table (Creative Commons Attribution 3.0 License.)

Journal ref: Physical Review X 2, 011002 (2012)

Growth and characterization of multiferroic BiMnO$_3$ thin films

Authors: Hyoungjeen Jeen, Guneeta Singh-Bhalla, Patrick R. Mickel, Kristen Voigt, Chelsey Morien, Sefaattin Tongay, A. F. Hebard, Amlan Biswas

Abstract: We have grown epitaxial thin films of multiferroic BiMnO$_3$ using pulsed laser deposition. The films were grown on SrTiO$_3$ (001) substrates by ablating a Bi-rich target. Using x-ray diffraction we confirmed that the films were epitaxial and the stoichiometry of the films was confirmed using Auger electron spectroscopy. The films have a ferromagnetic Curie temperature ($T_C$) of 85$\pm$5 K and a… ▽ More We have grown epitaxial thin films of multiferroic BiMnO$_3$ using pulsed laser deposition. The films were grown on SrTiO$_3$ (001) substrates by ablating a Bi-rich target. Using x-ray diffraction we confirmed that the films were epitaxial and the stoichiometry of the films was confirmed using Auger electron spectroscopy. The films have a ferromagnetic Curie temperature ($T_C$) of 85$\pm$5 K and a saturation magnetization of 1 $μ_B$/Mn. The electric polarization as a function of electric field ($P-E$) was measured using an interdigital capacitance geometry. The $P-E$ plot shows a clear hysteresis that confirms the multiferroic nature of the thin films. △ Less

Submitted 28 May, 2010; originally announced May 2010.

Comments: 4 pages, 4 figures, submitted to J. Appl. Phys

Journal ref: J. Appl. Phys. 109, 074104 (2011)

Built-in and induced polarization across LaAlO$_3$/SrTiO$_3$ heterojunctions

Authors: Guneeta Singh-Bhalla, Christopher Bell, Jayakanth Ravichandran, Wolter Siemons, Yasuyuki Hikita, Sayeef Salahuddin, Arthur F. Hebard, Harold Y. Hwang, Ramamoorthy Ramesh

Abstract: Ionic crystals terminated at oppositely charged polar surfaces are inherently unstable and expected to undergo surface reconstructions to maintain electrostatic stability. Essentially, an electric field that arises between oppositely charged atomic planes gives rise to a built-in potential that diverges with thickness. In ultra thin film form however the polar crystals are expected to remain stab… ▽ More Ionic crystals terminated at oppositely charged polar surfaces are inherently unstable and expected to undergo surface reconstructions to maintain electrostatic stability. Essentially, an electric field that arises between oppositely charged atomic planes gives rise to a built-in potential that diverges with thickness. In ultra thin film form however the polar crystals are expected to remain stable without necessitating surface reconstructions, yet the built-in potential has eluded observation. Here we present evidence of a built-in potential across polar \lao ~thin films grown on \sto ~substrates, a system well known for the electron gas that forms at the interface. By performing electron tunneling measurements between the electron gas and a metallic gate on \lao ~we measure a built-in electric field across \lao ~of 93 meV/Å. Additionally, capacitance measurements reveal the presence of an induced dipole moment near the interface in \sto, illuminating a unique property of \sto ~substrates. We forsee use of the ionic built-in potential as an additional tuning parameter in both existing and novel device architectures, especially as atomic control of oxide interfaces gains widespread momentum. △ Less

Submitted 24 May, 2010; originally announced May 2010.

Comments: 6 pages, 4 figures. Submitted to Nature physics on May 1st, 2010

Journal ref: Nature Physics 7, 80 (2011)

Asymmetric metal-insulator transition in disordered ferromagnetic films

Authors: R. Misra, A. F. Hebard, K. A. Muttalib, P. Wolfle

Abstract: We present experimental data and a theoretical interpretation on the conductance near the metal-insulator transition in thin ferromagnetic Gd films of thickness b approximately 2-10 nm. A large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L_phi < b in the range of sheet resistances considered, so that the effective dimension is… ▽ More We present experimental data and a theoretical interpretation on the conductance near the metal-insulator transition in thin ferromagnetic Gd films of thickness b approximately 2-10 nm. A large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L_phi < b in the range of sheet resistances considered, so that the effective dimension is d = 3. The observed approximate fractional temperature power law of the conductivity is ascribed to the scaling regime near the transition. The conductivity data as a function of temperature and disorder strength collapse on to two scaling curves for the metallic and insulating regimes. The best fit is obtained for a dynamical exponent z approximately 2.5 and a correlation length critical exponent ν' approximately 1.4 on the metallic side and a localization length exponent νapproximately 0.8 on the insulating side. △ Less

Submitted 22 March, 2010; originally announced March 2010.

Comments: 4 pages, 4 figures

Journal ref: Physical Review Letters, 107, 037201 (2011)

Finite size effects with variable range exchange coupling in thin-film Pd/Fe/Pd trilayers

Authors: R. K. Das, R. Misra, S. Tongay, R. Rairigh, A. F. Hebard

Abstract: The magnetic properties of thin-film Pd/Fe/Pd trilayers in which an embedded ~1.5 A-thick ultrathin layer of Fe induces ferromagnetism in the surrounding Pd have been investigated. The thickness of the ferromagnetic trilayer is controlled by varying the thickness of the top Pd layer over a range from 8 A to 56 A. As the thickness of the top Pd layer decreases, or equivalently as the embedded Fe… ▽ More The magnetic properties of thin-film Pd/Fe/Pd trilayers in which an embedded ~1.5 A-thick ultrathin layer of Fe induces ferromagnetism in the surrounding Pd have been investigated. The thickness of the ferromagnetic trilayer is controlled by varying the thickness of the top Pd layer over a range from 8 A to 56 A. As the thickness of the top Pd layer decreases, or equivalently as the embedded Fe layer moves closer to the top surface, the saturated magnetization normalized to area and the Curie temperature decrease whereas the coercivity increases. These thickness-dependent observations for proximity-polarized thin-film Pd are qualitatively consistent with finite size effects that are well known for regular thin-film ferromagnets. The critical exponent $β$ of the order parameter (magnetization) is found to approach the mean field value of 0.5 as the thickness of the top Pd layer increases. The functional forms for the thickness dependences, which are strongly modified by the nonuniform exchange interaction in the polarized Pd, provide important new insights to understanding nanomagnetism in two-dimensions. △ Less

Submitted 5 March, 2010; originally announced March 2010.

Comments: 14 pages, 5 figures, submitted to JMMM

Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

Authors: S. Tongay, T. Schumann, A. F. Hebard

Abstract: We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow… ▽ More We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior. △ Less

Submitted 4 October, 2009; originally announced October 2009.

Comments: 5 pages, 3 figures, 1 table

Supermetallic conductivity in bromine-intercalated graphite

Authors: S. Tongay, J. Hwang, D. B. Tanner, H. K. Pal, D. Maslov, A. F. Hebard

Abstract: Exposure of highly oriented pyrolytic graphite to bromine vapor gives rise to in-plane charge conductivities which increase monotonically with intercalation time toward values (for ~6 at% Br) that are significantly higher than Cu at temperatures down to 5 K. Magnetotransport, optical reflectivity and magnetic susceptibility measurements confirm that the Br dopes the graphene sheets with holes wh… ▽ More Exposure of highly oriented pyrolytic graphite to bromine vapor gives rise to in-plane charge conductivities which increase monotonically with intercalation time toward values (for ~6 at% Br) that are significantly higher than Cu at temperatures down to 5 K. Magnetotransport, optical reflectivity and magnetic susceptibility measurements confirm that the Br dopes the graphene sheets with holes while simultaneously increasing the interplanar separation. The increase of mobility (~ 5E4 cm^2/Vs at T=300 K) and resistance anisotropy together with the reduced diamagnetic susceptibility of the intercalated samples suggests that the observed supermetallic conductivity derives from a parallel combination of weakly-coupled hole-doped graphene sheets. △ Less

Submitted 6 July, 2009; originally announced July 2009.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B 81, 115428 ?2010?

Magnetodielectric Coupling in Nonmagnetic Au/GaAs:Si Schottky Barriers

Authors: S. Tongay, A. F. Hebard, Y. Hikita, H. Y. Hwang

Abstract: We report on a heretofore unnoted giant negative magnetocapacitance (>20%) in non-magnetic Au/GaAs:Si Schottky barriers that we attribute to a magnetic field in-duced increase in the binding energy of the shallow donor Si impurity atoms. Depletion capacitance (Cdep) dispersion identifies the impurity ionization and capture processes that give rise to a magnetic field dependent density of ionized… ▽ More We report on a heretofore unnoted giant negative magnetocapacitance (>20%) in non-magnetic Au/GaAs:Si Schottky barriers that we attribute to a magnetic field in-duced increase in the binding energy of the shallow donor Si impurity atoms. Depletion capacitance (Cdep) dispersion identifies the impurity ionization and capture processes that give rise to a magnetic field dependent density of ionized impurities. Internal photoemission experiments confirm that the large field-induced shifts in the built-in potential, inferred from 1/Cdep^2 vs voltage measurements, are not due to a field-dependent Schottky barrier height, thus requiring a modification of the abrupt junction approximation that accounts for the observed magnetodielectric coupling. △ Less

Submitted 2 June, 2009; originally announced June 2009.

Comments: 25 pages, 5 figures, submitted to Phys. Rev. B

Graphite in the bi-layer regime: in-plane transport

Authors: D. B. Gutman, S. Tongay, H. K. Pal, D. L. Maslov, A. F. Hebard

Abstract: An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, $ρ_{ab}$, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in $ρ_{ab}$ in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of c… ▽ More An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, $ρ_{ab}$, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in $ρ_{ab}$ in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphene-like optical phonons. △ Less

Submitted 2 July, 2009; v1 submitted 21 March, 2009; originally announced March 2009.

Comments: 5 pages, 2 fig

Journal ref: Phys. Rev. B 80, 045418 (2009)

Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges

Authors: G. Singh-Bhalla, A. Biswas, A. F. Hebard

Abstract: The manganite (La,Pr,Ca)MnO3 is well known for its micrometer scale phase separation into coexisting ferromagnetic metallic and antiferromagnetic insulating (AFI) regions. Fabricating bridges with widths smaller than the phase separation length scale has allowed us to probe the magnetic properties of individual phase separated regions. We observe tunneling magnetoresistance across naturally occu… ▽ More The manganite (La,Pr,Ca)MnO3 is well known for its micrometer scale phase separation into coexisting ferromagnetic metallic and antiferromagnetic insulating (AFI) regions. Fabricating bridges with widths smaller than the phase separation length scale has allowed us to probe the magnetic properties of individual phase separated regions. We observe tunneling magnetoresistance across naturally occurring AFI tunnel barriers separating adjacent ferromagnetic regions spanning the width of the bridges. Further, near the Curie temperature, a magnetic field induced metal-to-insulator transition among a discrete number of regions within the narrow bridges gives rise to abrupt and colossal low-field magnetoresistance steps at well defined switching fields. △ Less

Submitted 25 February, 2009; originally announced February 2009.

Comments: 13 pages, 3 figures, submitted to Applied Physics Letters

Spin-wave mediated quantum corrections to the conductivity in thin ferromagnetic gadolinium films

Authors: R. Misra, A. F. Hebard, K. A. Muttalib, P. Wolfle

Abstract: We present a study of quantum corrections to the conductivity of thin ferromagnetic gadolinium films. In situ magneto-transport measurements were performed on a series of thin films with thickness d < 135A. For sheet resistances R0 < 4011 Ohm and temperatures T < 30K, we observe a linear temperature dependence of the conductivity in addition to the logarithmic temperature dependence expected fro… ▽ More We present a study of quantum corrections to the conductivity of thin ferromagnetic gadolinium films. In situ magneto-transport measurements were performed on a series of thin films with thickness d < 135A. For sheet resistances R0 < 4011 Ohm and temperatures T < 30K, we observe a linear temperature dependence of the conductivity in addition to the logarithmic temperature dependence expected from well known quantum corrections in two dimensions. We show that such a linear T-dependence can arise from a spin-wave mediated Altshuler-Aronov type correction. △ Less

Submitted 29 August, 2008; originally announced August 2008.

Comments: 4 pages, 3 figures, 1 table

Ultra-Thin Silver Films obtained by Sequential Quench-Anneal Processing

Authors: S. B. Arnason, A. F. Hebard

Abstract: We have used the two-step growth technique, quench condensing followed by an anneal, to grow ultra thin films of silver on glass substrates. As has been seen with semiconductor substrates this process produces a metastable homogeneous covering of silver. By measuring the in situ resistance of the film during growth we are able to see that the low temperature growth onto substrates held at 100 Ke… ▽ More We have used the two-step growth technique, quench condensing followed by an anneal, to grow ultra thin films of silver on glass substrates. As has been seen with semiconductor substrates this process produces a metastable homogeneous covering of silver. By measuring the in situ resistance of the film during growth we are able to see that the low temperature growth onto substrates held at 100 Kelvin produces a precursor phase that is insulating until the film has been annealed. The transformation of the precursor phase into the final, metallic silver film occurs at a characteristic temperature near 150K where the sample reconstructs. This reconstruction is accompanied by a decrease in resistance of up to 10 orders of magnitude. △ Less

Submitted 30 July, 2008; originally announced July 2008.

Intrinsic tunneling in phase separated manganites

Authors: G. Singh-Bhalla, S. Selcuk, T. Dhakal, A. Biswas, A. F. Hebard

Abstract: We present evidence of direct electron tunneling across intrinsic insulating regions in sub-micrometer wide bridges of the phase separated ferromagnet (La,Pr,Ca)MnO$_3$. Upon cooling below the Curie temperature, a predominantly ferromagnetic supercooled state persists where tunneling across the intrinsic tunnel barriers (ITBs) results in metastable, temperature-independent, high-resistance plate… ▽ More We present evidence of direct electron tunneling across intrinsic insulating regions in sub-micrometer wide bridges of the phase separated ferromagnet (La,Pr,Ca)MnO$_3$. Upon cooling below the Curie temperature, a predominantly ferromagnetic supercooled state persists where tunneling across the intrinsic tunnel barriers (ITBs) results in metastable, temperature-independent, high-resistance plateaus over a large range of temperatures. Upon application of a magnetic field, our data reveal that the ITBs are extinguished resulting in sharp, colossal, low-field resistance drops. Our results compare well to theoretical predictions of magnetic domain walls coinciding with the intrinsic insulating phase. △ Less

Submitted 10 February, 2009; v1 submitted 30 July, 2007; originally announced July 2007.

Comments: changed content; accepted for publication in Physical Review Letters, 5 pages, 4 figures

Journal ref: Physical Review Letters 102, 077205 (2009)

Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites

Authors: Ryan P. Rairigh, Guneeta Singh-Bhalla, Sefaatin Tongay, Tara Dhakal, Amlan Biswas, Arthur F. Hebard

Abstract: Thin films of strongly-correlated electron materials (SCEM) are often grown epitaxially on planar substrates and typically have anisotropic properties that are usually not captured by edge-mounted four-terminal electrical measurements, which are primarily sensitive to in-plane conduction paths. Accordingly, the correlated interactions in the out-of-plane (perpendicular) direction cannot be measu… ▽ More Thin films of strongly-correlated electron materials (SCEM) are often grown epitaxially on planar substrates and typically have anisotropic properties that are usually not captured by edge-mounted four-terminal electrical measurements, which are primarily sensitive to in-plane conduction paths. Accordingly, the correlated interactions in the out-of-plane (perpendicular) direction cannot be measured but only inferred. We address this shortcoming and show here an experimental technique in which the SCEM under study, in our case a 600 Angstrom-thick (La1-yPry)0.67Ca0.33MnO3 (LPCMO) film, serves as the base electrode in a metal-insulator-metal (MIM) trilayer capacitor structure. This unconventional arrangement allows for simultaneous determination of colossal magnetoresistance (CMR) associated with dc transport parallel to the film substrate and colossal magnetocapacitance (CMC) associated with ac transport in the perpendicular direction. We distinguish two distinct strain-related direction-dependent insulator-metal (IM) transitions and use Cole-Cole plots to establish a heretofore unobserved collapse of the dielectric response onto a universal scale-invariant power-law dependence over a large range of frequency, temperature and magnetic field. △ Less

Submitted 1 March, 2007; originally announced March 2007.

Comments: 32 pages, 4 figures, Supplementary section included, Submitted to Nature Physics

Weak localization correction to the anomalous Hall effect in polycrystalline Fe films

Authors: P. Mitra, A. F. Hebard, K. A. Muttalib, P. Woelfle

Abstract: In situ transport measurements have been made on ultrathin ($<$100 Å thick) polycrystalline Fe films as a function of temperature and magnetic field for a wide range of disorder strengths. For sheet resistances $R_{xx}$ less than $\sim 3kΩ$, we find a logarithmic temperature dependence of the anomalous Hall conductivity $σ_{xy}$ which is shown for the first time to be due to a universal scale de… ▽ More In situ transport measurements have been made on ultrathin ($<$100 Å thick) polycrystalline Fe films as a function of temperature and magnetic field for a wide range of disorder strengths. For sheet resistances $R_{xx}$ less than $\sim 3kΩ$, we find a logarithmic temperature dependence of the anomalous Hall conductivity $σ_{xy}$ which is shown for the first time to be due to a universal scale dependent weak localization correction within the skew scattering model. For higher sheet resistance, granularity becomes important and the break down of universal behavior becomes manifest as the prefactors to $σ_{xx}$ and $σ_{xy}$ decrease at different rates with increasing disorder. △ Less

Submitted 22 May, 2007; v1 submitted 8 June, 2006; originally announced June 2006.

Comments: 5 pages, 4 figures; revised submission with additional data and more general interpretation

Glassy behavior of interface states in Al-AlOx-Al tunnel junctions

Authors: Jeremy R. Nesbitt, Arthur F. Hebard

Abstract: We present results of a study of tunnel junction aging in which the early time dynamics are captured by in situ monitoring of electrical properties of Al-AlOx-Al planar tunnel junctions beginning when the deposition of the counterelectrode is complete. The observed stretched exponential dependences of the conductance and the capacitance manifest hierarchically constrained dynamics imposed by cor… ▽ More We present results of a study of tunnel junction aging in which the early time dynamics are captured by in situ monitoring of electrical properties of Al-AlOx-Al planar tunnel junctions beginning when the deposition of the counterelectrode is complete. The observed stretched exponential dependences of the conductance and the capacitance manifest hierarchically constrained dynamics imposed by correlated relaxations of interface traps. Bias voltage is used as a control parameter to create bias-dependent aging trajectories that exhibit memory and age-dependent relaxations. Simple tunnel barrier and equivalent circuit modeling provide a comprehensive understanding of this novel and unexpected glassy behavior that appears to be unique to tunnel junctions and has important implications for technical applications. △ Less

Submitted 10 November, 2005; originally announced November 2005.

Comments: 19 pages, 4 figures, 1 table

Metal-Insulator-Like Behavior in Semimetallic Bismuth and Graphite

Authors: Xu Du, Shan-Wen Tsai, Dmitrii L. Maslov, Arthur F. Hebard

Abstract: When high quality bismuth or graphite crystals are placed in a magnetic field directed along the c-axis (trigonal axis for bismuth) and the temperature is lowered, the resistance increases as it does in an insulator but then saturates. We show that the combination of unusual features specific to semimetals, i.e., low carrier density, small effective mass, high purity, and an equal number of elec… ▽ More When high quality bismuth or graphite crystals are placed in a magnetic field directed along the c-axis (trigonal axis for bismuth) and the temperature is lowered, the resistance increases as it does in an insulator but then saturates. We show that the combination of unusual features specific to semimetals, i.e., low carrier density, small effective mass, high purity, and an equal number of electrons and holes (compensation), gives rise to a unique ordering and spacing of three characteristic energy scales, which not only is specific to semimetals but which concomitantly provides a wide window for the observation of apparent field induced metal-insulator behavior. Using magnetotransport and Hall measurements, the details of this unusual behavior are captured with a conventional multi-band model, thus confirming the occupation by semimetals of a unique niche between conventional metals and semiconductors. △ Less

Submitted 3 June, 2005; v1 submitted 29 April, 2004; originally announced April 2004.

Comments: 4 pages, 4 figs, data and discussion on bismuth added, final published version

Journal ref: Phys. Rev. Lett. 94, 166601 (2005)

Magnetocapacitance: A probe of spin-dependent potentials

Authors: K. T. McCarthy, A. F. Hebard, S. B. Arnason

Abstract: The magnetic field dependence of the capacitance of Pd-AlOx-Al thin-film structures has been measured. The observed quadratic dependence of capacitance on magnetic field is consistent with a theoretical model that includes the effect of a spin-dependent electrochemical potential on electron screening in the paramagnetic Pd. This spin-dependent electrochemical potential is related to the Zeeman s… ▽ More The magnetic field dependence of the capacitance of Pd-AlOx-Al thin-film structures has been measured. The observed quadratic dependence of capacitance on magnetic field is consistent with a theoretical model that includes the effect of a spin-dependent electrochemical potential on electron screening in the paramagnetic Pd. This spin-dependent electrochemical potential is related to the Zeeman splitting of the narrow d-bands in Pd. The quantitative details depend on the electronic band structure at the surface of Pd. △ Less

Submitted 22 June, 2002; originally announced June 2002.

Comments: 4 pages, 3 figures

Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures

Authors: N. Theodoropoulou, A. F. Hebard, M. Gabay, A. K. Majumdar, C. Pace, J. Lannon, D. Temple

Abstract: Using temperature-dependent magnetoresistance and magnetization measurements on Fe/Cr multilayers that exhibit pronounced giant magnetoresistance (GMR), we have found evidence for the presence of a glassy antiferromagnetic (GAF) phase. This phase reflects the influence of interlayer exchange coupling (IEC) at low temperature (T < 140K) and is characterized by a field-independent glassy transitio… ▽ More Using temperature-dependent magnetoresistance and magnetization measurements on Fe/Cr multilayers that exhibit pronounced giant magnetoresistance (GMR), we have found evidence for the presence of a glassy antiferromagnetic (GAF) phase. This phase reflects the influence of interlayer exchange coupling (IEC) at low temperature (T < 140K) and is characterized by a field-independent glassy transition temperature, Tg, together with irreversible behavior having logarithmic time dependence below a "de Almeida and Thouless" (AT) critical field line. At room temperature, where the GMR effect is still robust, IEC plays only a minor role, and it is the random potential variations acting on the magnetic domains that are responsible for the antiparallel interlayer domain alignment. △ Less

Submitted 6 May, 2002; originally announced May 2002.

Comments: 5 pages, 4 figures

Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

Authors: N. Theodoropoulou, A. F. Hebard, M. E. Overberg, C. R. Abernathy, S. J. Pearton, S. N. G. Chu, R. G. Wilson

Abstract: Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is suppressed when the Mn dose is increased or decreased away from the 3 at.% value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of one Bohr magneton, and the spin wave… ▽ More Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is suppressed when the Mn dose is increased or decreased away from the 3 at.% value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of one Bohr magneton, and the spin wave stiffness inferred from the Bloch-law T^3/2 dependence of the magnetization provides an estimate Tc = 385K of the Curie temperature that exceeds the experimental value, Tc = 270K. The presence of ferromagnetic clusters and hysteresis to temperatures of at least 330K is attributed to disorder and proximity to a metal-insulating transition. △ Less

Submitted 26 January, 2002; originally announced January 2002.

Comments: 4 pages, 4 figures (RevTex4)

Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers

Authors: A. K. Majumdar, A. F. Hebard, Avinash Singh, D. Temple

Abstract: The temperature dependence of the electrical resistivity and magnetoresistance of Xe-ion beam sputtered Fe-Cr multilayers has been investigated. The electrical resistivity between 5 and 300 K in the fully ferromagnetic state, obtained by applying a field beyond the saturation field (H_sat) necessary for the antiferromagnetic(AF)-ferromagnetic(FM) field-induced transition, shows evidence of spin-… ▽ More The temperature dependence of the electrical resistivity and magnetoresistance of Xe-ion beam sputtered Fe-Cr multilayers has been investigated. The electrical resistivity between 5 and 300 K in the fully ferromagnetic state, obtained by applying a field beyond the saturation field (H_sat) necessary for the antiferromagnetic(AF)-ferromagnetic(FM) field-induced transition, shows evidence of spin-disorder resistivity as in crystalline Fe and an s-d scattering contribution (as in 3d metals and alloys). The sublattice magnetization m(T) in these multilayers has been calculated in terms of the planar and interlayer exchange energies. The additional spin-dependent scattering Δρ(T) = ρ(T,H=0)_AF - ρ(T,H=H_sat)_FM in the AF state over a wide range of temperature is found to be proportional to the sublattice magnetization, both Δρ(T) and m(T) reducing along with the antiferromagnetic fraction. At intermediate fields, the spin-dependent part of the electrical resistivity (ρ_s (T)) fits well to the power law ρ_s (T) = b - cT^αwhere c is a constant and b and αare functions of H. At low fields α\approx 2 and the intercept b decreases with H much the same way as the decrease of Δρ(T) with T. A phase diagram (T vs. H_sat) is obtained for the field- induced AF to FM transition. Comparisons are made between the present investigation and similar studies using dc magnetron sputtered and molecular beam epitaxy (MBE) grown Fe-Cr multilayers. △ Less

Submitted 6 November, 2001; originally announced November 2001.

Comments: 8 pages, 10 figures, to appear in Phys. Rev. B

Journal ref: Phys. Rev. B vol. 65, 054408 (2002)

Ordered low-temperature structure in K4C60 detected by infrared spectroscopy

Authors: K. Kamaras, G. Klupp, D. B. Tanner, A. F. Hebard, N. M. Nemes, J. E. Fischer

Abstract: Infrared spectra of a K4C60 single-phase thin film have been measured between room temperature and 20 K. At low temperatures, the two high-frequency T1u modes appear as triplets, indicating a static D2h crystal-field stabilized Jahn-Teller distortion of the (C60)4- anions. The T1u(4) mode changes into the known doublet above 250 K, a pattern which could have three origins: a dynamic Jahn-Teller… ▽ More Infrared spectra of a K4C60 single-phase thin film have been measured between room temperature and 20 K. At low temperatures, the two high-frequency T1u modes appear as triplets, indicating a static D2h crystal-field stabilized Jahn-Teller distortion of the (C60)4- anions. The T1u(4) mode changes into the known doublet above 250 K, a pattern which could have three origins: a dynamic Jahn-Teller effect, static disorder between "staggered" anions, or a phase transition from an orientationally-ordered phase to one where molecular motion is significant. △ Less

Submitted 16 October, 2001; originally announced October 2001.

Comments: 4 pages, 2 figures submitted to Phys. Rev. B

Journal ref: Phys. Rev. B vol. 65, 052103 (2002).

Unambiguous determination of the g-factor for holes in bismuth at high B/T

Authors: S. G. Bompadre, C. Biagini, D. Maslov, A. F. Hebard

Abstract: Magnetotransport has been investigated in high purity bismuth crystals in static magnetic fields as high as 20 T and temperatures as low as 25 mK. This high B/T ratio permits observation of pronounced Shubnikov-de Haas oscillations over a wide field range and up to fields where most of the carriers are in the lowest Landau level. For transport currents in the bisectrix or binary directions and f… ▽ More Magnetotransport has been investigated in high purity bismuth crystals in static magnetic fields as high as 20 T and temperatures as low as 25 mK. This high B/T ratio permits observation of pronounced Shubnikov-de Haas oscillations over a wide field range and up to fields where most of the carriers are in the lowest Landau level. For transport currents in the bisectrix or binary directions and field in the perpendicular trigonal direction, we have observed doublet splittings centered on each Shubnikov-de Haas oscillation. These splittings exhibit a quadratic dependence on field and disappear before the last oscillation. Our observations allow us to conclude unambiguously that already when the Landau level index is as high as 2 the carriers are fully polarized and that the g-factor for holes with the field in the trigonal direction is 35.3(4). △ Less

Submitted 14 June, 2000; originally announced June 2000.

Comments: 4 pages, 3 figures

Spin-Peierls transition in NaV2O5 in high magnetic fields

Authors: S. G. Bompadre, Arthur F. Hebard, Valeri N. Kotov, D. Hall, G. Maris, J. Baas, T. T. M. Palstra

Abstract: We investigate the magnetic field dependence of the spin-Peierls transition in NaV$_2$O$_5$ in the field range 16T-30T. The transition temperature exhibits a very weak variation with the field, suggesting a novel mechanism for the formation of the spin-Peierls state. We argue that a charge ordering transition accompanied by singlet formation is consistent with our observations. We investigate the magnetic field dependence of the spin-Peierls transition in NaV$_2$O$_5$ in the field range 16T-30T. The transition temperature exhibits a very weak variation with the field, suggesting a novel mechanism for the formation of the spin-Peierls state. We argue that a charge ordering transition accompanied by singlet formation is consistent with our observations. △ Less

Submitted 14 April, 2000; v1 submitted 19 November, 1999; originally announced November 1999.

Comments: 4 pages, 3 figures, final version to appear in Phys. Rev. B (RC)

Journal ref: Phys. Rev. B 61, R13321 (2000).