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Coherent X-ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth
Authors:
Peco Myint,
Jeffrey M. Woodward,
Chenyu Wang,
Xiaozhi Zhang,
Lutz Wiegart,
Andrei Fluerasu,
Randall L. Headrick,
Charles R. Eddy, Jr.,
Karl F. Ludwig
Abstract:
Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low temperatures. However, the addition of the plasma into the growth environment also complicates the surface dynamical evolution. Taking advantage of continued increases in accelerator-based X-ray source brilliance, this real-time study uses X-ra…
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Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low temperatures. However, the addition of the plasma into the growth environment also complicates the surface dynamical evolution. Taking advantage of continued increases in accelerator-based X-ray source brilliance, this real-time study uses X-ray Photon Correlation Spectroscopy (XPCS) to elucidate the nanoscale surface dynamics during Plasma-Enhanced Atomic Layer Deposition (PE-ALD) of an epitaxial indium nitride film. XPCS examines the evolution of the coherent X-ray scattering speckle pattern, which is a fingerprint of the unique sample microstructure at each moment in time. In PE-ALD, ultrathin films are synthesized from repeated cycles of alternating self-limited surface reactions induced by temporally-separated pulses of material precursor and plasma reactant, allowing the influence of each on the evolving morphology to be examined. During the heteroepitaxial 3D growth examined here, sudden changes in surface structure during initial film growth, consistent with numerous overlap** stress-relief events, are observed. When the film becomes continuous, the nanoscale surface morphology abruptly becomes long-lived with correlation time spanning the period of the experiment. Throughout the growth experiment, there is a consistent repeating pattern of correlations associated with the cyclic growth process, which is modeled as transitions between different surface states. The plasma exposure does not simply freeze in a structure that is then built upon in subsequent cycles, but rather there is considerable surface evolution during all phases of the growth cycle.
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Submitted 23 June, 2023;
originally announced June 2023.
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Local step-flow dynamics in thin film growth with desorption
Authors:
Xiaozhi Zhang,
Jeffrey G. Ulbrandt,
Peco Myint,
Andrei Fluerasu,
Lutz Wiegart,
Yugang Zhang,
Christie Nelson,
Karl F. Ludwig,
Randall L. Headrick
Abstract:
Desorption of deposited species plays a role in determining the evolution of surface morphology during crystal growth when the desorption time constant is short compared to the time to diffuse to a defect site, step edge or kink. However, experiments to directly test the predictions of these effects are lacking. Novel techniques such as \emph{in-situ} coherent X-ray scattering can provide signific…
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Desorption of deposited species plays a role in determining the evolution of surface morphology during crystal growth when the desorption time constant is short compared to the time to diffuse to a defect site, step edge or kink. However, experiments to directly test the predictions of these effects are lacking. Novel techniques such as \emph{in-situ} coherent X-ray scattering can provide significant new information. Herein we present X-ray Photon Correlation Spectroscopy (XPCS) measurements during diindenoperylene (DIP) vapor deposition on thermally oxidized silicon surfaces. DIP forms a nearly complete two-dimensional first layer over the range of temperatures studied (40 - 120 $^{\circ}$C), followed by mounded growth during subsequent deposition. Local step flow within mounds was observed, and we find that there was a terrace-length-dependent behavior of the step edge dynamics. This led to unstable growth with rapid roughening ($β>0.5$) and deviation from a symmetric error-function-like height profile. At high temperatures, the grooves between the mounds tend to close up leading to nearly flat polycrystalline films. Numerical analysis based on a 1 + 1 dimensional model suggests that terrace-length dependent desorption of deposited ad-molecules is an essential cause of the step dynamics, and it influences the morphology evolution.
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Submitted 29 May, 2023;
originally announced May 2023.
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Early Stage Growth of Amorphous Thin Film: Average Kinetics, Nanoscale Dynamics and Pressure Dependence
Authors:
Chenyu Wang,
Karl F. Ludwig,
Christa Wagenbach,
Meliha G. Rainville,
Suresh Narayanan,
Hua Zhou,
Jeffrey G. Ulbrandt,
Randall L. Headrick
Abstract:
We used the Coherent Grazing Incidence Small Angle X-Ray Scattering (Co-GISAXS) technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi$_2$ sputter deposition. The kinetic and dynamic properties are examined as a function of pressure, which is known to be a critical factor in determining final surface roughness. Surface growth kinetics and dynamics are characterized…
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We used the Coherent Grazing Incidence Small Angle X-Ray Scattering (Co-GISAXS) technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi$_2$ sputter deposition. The kinetic and dynamic properties are examined as a function of pressure, which is known to be a critical factor in determining final surface roughness. Surface growth kinetics and dynamics are characterized by time parameters extracted from the height-height structure factor and correlation functions. The roughness at a given length scale reaches a maximum before relaxing down to a steady state. The lateral length scale dependence and pressure dependence are then compared among measured kinetics and dynamics time parameters. Surfaces grown at lower pressures are smoother, leading to longer correlation times. The time to reach a dynamic steady state and a kinetic steady state show contrasting pressure dependence. A dynamic steady state is reached earlier than the kinetic steady state at high pressure. A more random deposition direction and lower kinetic energy at higher pressures can explain these phenomena, along with the hypothesis that larger nanoclusters form in vapor before arriving at the surface. A continuum model is applied to simulate the overall behavior with mixed success.
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Submitted 9 December, 2021; v1 submitted 28 November, 2021;
originally announced November 2021.
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Measurement of Ehrlich-Schwoebel barrier contribution to the self-organized formation of ordered surface patterns on Ge(001)
Authors:
Peco Myint,
Denise Erb,
Xiaozhi Zhang,
Lutz Wiegart,
Yugang Zhang,
Andrei Fluerasu,
Randall L. Headrick,
Stefan Facsko,
Karl F. Ludwig, Jr
Abstract:
Normal incidence 1 keV Ar$^+$ ion bombardment leads to amorphization and ultrasmoothing of Ge at room temperature, but at elevated temperatures the Ge surface remains crystalline and is unstable to the formation of self-organized nanoscale patterns of ordered pyramid-shaped pits. The physical phenomenon distinguishing the high temperature patterning from room temperature ultrasmoothing is believed…
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Normal incidence 1 keV Ar$^+$ ion bombardment leads to amorphization and ultrasmoothing of Ge at room temperature, but at elevated temperatures the Ge surface remains crystalline and is unstable to the formation of self-organized nanoscale patterns of ordered pyramid-shaped pits. The physical phenomenon distinguishing the high temperature patterning from room temperature ultrasmoothing is believed to be a surface instability due to the Ehrlich-Schwoebel barrier for diffusing vacancies and adatoms, which is not present on the amorphous material. This real-time GISAXS study compares smoothing of a pre-patterned Ge sample at room temperature with patterning of an initially flat Ge sample at an elevated temperature. In both experiments, when the nanoscale structures are relatively small in height, the average kinetics can be explained by a linear theory. The linear theory coefficients, indicating surface stability or instability, were extracted for both experiments. A comparison between the two measurements allows estimation of the contribution of the Ehrlich-Schwoebel barrier to the self-organized formation of ordered nanoscale patterns on crystalline Ge surfaces.
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Submitted 14 August, 2020;
originally announced August 2020.
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Nanoscale dynamics during self-organized ion beam patterning of Si: II. Kr$^+$ Bombardment
Authors:
Peco Myint,
Karl F. Ludwig Jr.,
Lutz Wiegart,
Yugang Zhang,
Andrei Fluerasu,
Xiaozhi Zhang,
Randall L. Headrick
Abstract:
Despite extensive study, fundamental understanding of self-organized patterning by broad-beam ion bombardment is still incomplete and controversial. Understanding the nanopatterning of elemental semiconductors, particularly silicon, is both foundational for the broader field and of intrinsic scientific and technological interest itself. This is the second component of a two-part investigation of t…
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Despite extensive study, fundamental understanding of self-organized patterning by broad-beam ion bombardment is still incomplete and controversial. Understanding the nanopatterning of elemental semiconductors, particularly silicon, is both foundational for the broader field and of intrinsic scientific and technological interest itself. This is the second component of a two-part investigation of the kinetics and fluctuation dynamics of self-organized nanoscale ripple development on silicon during 1 keV Ar$^+$ (Part I) and Kr$^+$ bombardment. Here, it's found that the ion-enhanced viscous flow relaxation is essentially equal for Kr$^+$-induced patterning as previously found for Ar$^+$ patterning. The magnitude of the surface curvature dependent roughening rate in the early stage kinetics is larger for Kr$^+$ than for Ar$^+$, qualitatively consistent with expectations for erosive and mass redistributive contributions to the initial surface instability. As with the Ar$^+$ case, fluctuation dynamics in the late stage show a peak in correlation time at the length scale corresponding to the dominant structural feature on the surface -- the ripples. Analogy is made to the phenomenon of de Gennes narrowing in liquids, but significant differences are also pointed out. Finally, it's shown that speckle motion during the surface evolution can be analyzed to determine spatial inhomogeneities in erosion rate and ripple velocity on the surface. This allows the direction and speed of ripple motion to be measured in real time, a unique capability for measuring these fundamental parameters outside the specialized environment of FIB/SEM systems.
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Submitted 17 May, 2021; v1 submitted 23 July, 2020;
originally announced July 2020.
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Nanoscale dynamics during self-organized ion beam patterning of Si: I. Ar$^+$ Bombardment
Authors:
Peco Myint,
Karl F. Ludwig Jr.,
Lutz Wiegart,
Yugang Zhang,
Andrei Fluerasu,
Xiaozhi Zhang,
Randall L. Headrick
Abstract:
Coherent grazing-incidence small-angle X-ray scattering is used to investigate the average kinetics and the fluctuation dynamics during self-organized nanopatterning of silicon by Ar$^+$ bombardment at 65$^{\circ}$ polar angle. At early times, the surface behavior can be understood within the framework of linear theory. The transition away from the linear theory behavior is observed in the dynamic…
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Coherent grazing-incidence small-angle X-ray scattering is used to investigate the average kinetics and the fluctuation dynamics during self-organized nanopatterning of silicon by Ar$^+$ bombardment at 65$^{\circ}$ polar angle. At early times, the surface behavior can be understood within the framework of linear theory. The transition away from the linear theory behavior is observed in the dynamics through the intensity correlation function. It quickly evolves to exhibit stretched exponential decay on short length scales and compressed exponential decay on length scales corresponding the dominant structural length scale - the ripple wavelength. The correlation times also peak strongly at the ripple length scale. This behavior has notable similarities but also significant differences with the phenomenon of de Gennes narrowing. Overall, this dynamics behavior is found to be consistent with simulations of a nonlinear growth model.
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Submitted 17 May, 2021; v1 submitted 23 July, 2020;
originally announced July 2020.
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de Gennes Narrowing and the Relationship Between Structure and Dynamics in Self-Organized Ion Beam Nanopatterning
Authors:
Peco Myint,
Karl F. Ludwig, Jr.,
Lutz Wiegart,
Yugang Zhang,
Andrei Fluerasu,
Xiaozhi Zhang,
Randall L. Headrick
Abstract:
Investigating the relationship between structure and dynamical processes is a central goal in condensed matter physics. Perhaps the most noted relationship between the two is the phenomenon of de Gennes narrowing, in which relaxation times in liquids are proportional to the scattering structure factor. Here a similar relationship is discovered during the self-organized ion beam nanopatterning of s…
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Investigating the relationship between structure and dynamical processes is a central goal in condensed matter physics. Perhaps the most noted relationship between the two is the phenomenon of de Gennes narrowing, in which relaxation times in liquids are proportional to the scattering structure factor. Here a similar relationship is discovered during the self-organized ion beam nanopatterning of silicon using coherent x-ray scattering. However, in contrast to the exponential relaxation of fluctuations in classic de Gennes narrowing, the dynamic surface exhibits a wide range of behaviors as a function of length scale, with a compressed exponential relaxation at lengths corresponding to the dominant structural motif - self-organized nanoscale ripples. These behaviors are reproduced in simulations of a nonlinear model describing the surface evolution. We suggest that the compressed exponential behavior observed here is due to the morphological persistence of the self-organized surface ripple patterns which form and evolve during ion beam nanopatterning.
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Submitted 14 January, 2021; v1 submitted 14 July, 2020;
originally announced July 2020.
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Role of ferroelectric polarization during growth of highly strained ferroelectrics revealed by in-situ x-ray diffraction
Authors:
Rui Liu,
Jeffrey G. Ulbrandt,
Hsiang-Chun Hsing,
Anna Gura,
Benjamin Bein,
Alec Sun,
Charles Pan,
Giulia Bertino,
Amanda Lai,
Kaize Cheng,
Eli Doyle,
Kenneth Evans-Lutterodt,
Randall L. Headrick,
Matthew Dawber
Abstract:
Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical prope…
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Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. We have studied this effect in detail by focusing on the properties of BaTiO$_{3}$ thin films grown on very thin layers of PbTiO$_{3}$ using a combination of x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. Our research motivates the concept of polarization engineering during the growth process as a new and complementary approach to strain engineering.
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Submitted 26 September, 2019;
originally announced September 2019.
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Homoepitaxial growth of SrTiO$_3$ by Pulsed Laser Deposition: energetic vs thermal growth
Authors:
Jeffrey G. Ulbrandt,
Xiaozhi Zhang,
Rui Liu,
Kenneth Evans-Lutterodt,
Matthew Dawber,
Randall L. Headrick
Abstract:
Pulsed Laser Deposition (PLD) is widely used to grow epitaxial thin films of quantum materials such as complex oxides. Here, we use in-situ X-ray scattering to study homoepitaxy of SrTiO$_3$ by energetic (e-) and thermalized (th-) PLD. We find that e-PLD suppresses the lateral growth of two-dimensional islands, which suggests that energetic particles break up smaller islands. Fast interlayer trans…
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Pulsed Laser Deposition (PLD) is widely used to grow epitaxial thin films of quantum materials such as complex oxides. Here, we use in-situ X-ray scattering to study homoepitaxy of SrTiO$_3$ by energetic (e-) and thermalized (th-) PLD. We find that e-PLD suppresses the lateral growth of two-dimensional islands, which suggests that energetic particles break up smaller islands. Fast interlayer transport occurs for both e-PLD and th-PLD, implying a process operating on sub-microsecond timescales that doesn't depend strongly on the kinetic energy of the incident particles.
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Submitted 18 July, 2019;
originally announced July 2019.
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Coherent X-ray measurement of step-flow propagation during growth on polycrystalline thin film surfaces
Authors:
Randall L. Headrick,
Jeffrey G. Ulbrandt,
Peco Myint,
**g Wan,
Yang Li,
Andrei Fluerasu,
Yugang Zhang,
Lutz Wiegart,
Karl F. Ludwig, Jr
Abstract:
The properties of artificially grown thin films are strongly affected by surface processes during growth. Coherent X-rays provide an approach to better understand such processes and fluctuations far from equilibrium. Here we report results for vacuum deposition of C$_{60}$ on a graphene-coated surface investigated with X-ray Photon Correlation Spectroscopy in surface-sensitive conditions. Step-flo…
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The properties of artificially grown thin films are strongly affected by surface processes during growth. Coherent X-rays provide an approach to better understand such processes and fluctuations far from equilibrium. Here we report results for vacuum deposition of C$_{60}$ on a graphene-coated surface investigated with X-ray Photon Correlation Spectroscopy in surface-sensitive conditions. Step-flow is observed through measurement of the step-edge velocity in the late stages of growth after crystalline mounds have formed. We show that the step-edge velocity is coupled to the terrace length, and that there is a variation in the velocity from larger step spacing at the center of crystalline mounds to closely-spaced, more slowly propagating steps at their edges. The results extend theories of surface growth, since the behavior is consistent with surface evolution driven by processes that include surface diffusion, the motion of step-edges, and attachment at step edges with significant step-edge barriers.
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Submitted 5 May, 2019; v1 submitted 26 October, 2018;
originally announced October 2018.
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Ballistic Deposition of Nanoclusters
Authors:
Jeffrey G. Ulbrandt,
Yang Li,
Randall L. Headrick
Abstract:
Nanoporous thin-films are an important class of materials, offering a way to observe fundamental surface and bulk processes with particles larger than individual atoms, but small enough to interact significantly with each other through mechanisms such as stress and surface mobility. In-Situ X-ray Reflectivity and Grazing Incidence Small Angle X-Ray Scattering (GISAXS) were used to monitor thin-fil…
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Nanoporous thin-films are an important class of materials, offering a way to observe fundamental surface and bulk processes with particles larger than individual atoms, but small enough to interact significantly with each other through mechanisms such as stress and surface mobility. In-Situ X-ray Reflectivity and Grazing Incidence Small Angle X-Ray Scattering (GISAXS) were used to monitor thin-films grown from Tungsten Disilicide (WSi$_2$) and Copper (Cu) nanoclusters. The nanoclusters ranged in size from 2 nm to 6 nm diameter and were made by high-pressure magnetron sputtering via plasma-gas condensation. X-Ray Reflectivity (XRR) measurements of the film at various stages of growth reveal that the resulting films exhibit very low density, approaching 15% of bulk density. This is consistent with a simple off-lattice ballistic deposition model where particles stick at the point of first contact without further restructuring. Furthermore, there is little merging or sintering of the clusters in these films.
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Submitted 19 March, 2016;
originally announced March 2016.
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Nucleation and strain-stabilization during organic semiconductor thin film deposition
Authors:
Yang Li,
**g Wan,
Detlef-M. Smilgies,
Nicole Bouffard,
Richard Sun,
Randall L. Headrick
Abstract:
The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a su…
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The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135$^\circ$C.
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Submitted 30 July, 2016; v1 submitted 31 October, 2015;
originally announced November 2015.
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Transient phases during fast crystallization of organic thin films from solution
Authors:
**g Wan,
Yang Li,
Jeffrey G. Ulbrandt,
Detlef-M. Smilgies,
Jonathan Hollin,
Adam C. Whalley,
Randall L. Headrick
Abstract:
We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C$_8$-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to $\approx$93$^\circ$C. The layered smectic liquid-crystalline phase of C$_8$-BTBT initially forms…
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We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C$_8$-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to $\approx$93$^\circ$C. The layered smectic liquid-crystalline phase of C$_8$-BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature $>$60$^\circ$C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s) mobility up to 3.0 cm$^2$/V-s has been observed.
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Submitted 30 September, 2015;
originally announced September 2015.
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Co-GISAXS as a New Technique to Investigate Surface Growth Dynamics
Authors:
Meliha G. Rainville,
Christa Hoskin,
Jeffrey G. Ulbrandt,
Suresh Narayanan,
Alec R. Sandy,
Hua Zhou,
Randall L. Headrick,
Karl F. Ludwig Jr
Abstract:
Detailed quantitative measurement of surface dynamics during thin film growth is a major experimental challenge. Here X-ray Photon Correlation Spectroscopy with coherent hard X-rays is used in a Grazing-Incidence Small-Angle X-ray Scattering (i.e. Co-GISAXS) geometry as a new tool to investigate nanoscale surface dynamics during sputter deposition of a-Si and a-WSi$_2$ thin films. For both films,…
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Detailed quantitative measurement of surface dynamics during thin film growth is a major experimental challenge. Here X-ray Photon Correlation Spectroscopy with coherent hard X-rays is used in a Grazing-Incidence Small-Angle X-ray Scattering (i.e. Co-GISAXS) geometry as a new tool to investigate nanoscale surface dynamics during sputter deposition of a-Si and a-WSi$_2$ thin films. For both films, kinetic roughening during surface growth reaches a dynamic steady state at late times in which the intensity autocorrelation function $g_2$(q,t) becomes stationary. The $g_2$(q,t) functions exhibit compressed exponential behavior at all wavenumbers studied. The overall dynamics are complex, but the most surface sensitive sections of the structure factor and correlation time exhibit power law behaviors consistent with dynamical scaling.
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Submitted 3 August, 2015;
originally announced August 2015.
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Using coherent X-rays to directly measure the propagation velocity of defects during thin film deposition
Authors:
Jeffrey G. Ulbrandt,
Meliha G. Rainville,
Christa Hoskin,
Suresh Narayanan,
Alec R. Sandy,
Hua Zhou,
Karl F. Ludwig Jr.,
Randall L. Headrick
Abstract:
The properties of artificially grown thin films are often strongly affected by the dynamic relationship between surface growth processes and subsurface structure. Coherent mixing of X-ray signals promises to provide an approach to better understand such processes. Here, we demonstrate the continuously variable mixing of surface and bulk scattering signals during real-time studies of sputter deposi…
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The properties of artificially grown thin films are often strongly affected by the dynamic relationship between surface growth processes and subsurface structure. Coherent mixing of X-ray signals promises to provide an approach to better understand such processes. Here, we demonstrate the continuously variable mixing of surface and bulk scattering signals during real-time studies of sputter deposition of a-Si and a-WiS2 films by controlling the X-ray penetration and escape depths in coherent grazing incidence small angle X-ray scattering (Co-GISAXS). Under conditions where the X-ray signal comes from both the growth surface and the thin film bulk, oscillations in temporal correlations arise from coherent interference between scattering from stationary bulk features and from the advancing surface. We also observe evidence that elongated bulk features propagate upward at the same velocity as the surface. Additionally, a highly surface sensitive mode is demonstrated that can access the surface dynamics independently of the subsurface structure.
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Submitted 30 September, 2015; v1 submitted 13 July, 2015;
originally announced July 2015.
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Indirect Spin Exchange Interaction in Substituted Copper Phthalocyanine Crystalline Thin Films
Authors:
Naveen Rawat,
Zhenwen Pan,
Cody J. Lamarche,
Takahisa Tokumoto,
Judy G. Cherian,
Anthony Wetherby,
Rory Waterman,
Randall L. Headrick,
Stephen A. McGill,
Madalina I. Furis
Abstract:
The origins of indirect spin exchange in crystalline thin films of Copper Octabutoxy Phthalocyanine (Cu-OBPc) are investigated using Magnetic Circular Dichroism (MCD) spectroscopy. These studies are made possible by a solution deposition technique which produces highly ordered films with macroscopic grain sizes suitable for optical studies. For temperatures lower than 2 K, the contribution of a sp…
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The origins of indirect spin exchange in crystalline thin films of Copper Octabutoxy Phthalocyanine (Cu-OBPc) are investigated using Magnetic Circular Dichroism (MCD) spectroscopy. These studies are made possible by a solution deposition technique which produces highly ordered films with macroscopic grain sizes suitable for optical studies. For temperatures lower than 2 K, the contribution of a specific state in the valence band manifold originating from the hybridized lone pair in nitrogen orbitals of the Phthalocyanine ring, bears the Brillouin-like signature of an exchange interaction with the localized $\textit{d}$-shell Cu spins. A comprehensive MCD spectral analysis coupled with a molecular field model of a $σπ-d$ exchange analogous to $\textit{sp-d}$ interactions in Diluted Magnetic Semiconductors (DMS) renders an enhanced Zeeman splitting and a modified $\textit{g}$-factor of -4 for the electrons that mediate the interaction. These studies define an experimental tool for identifying electronic states involved in spin-dependent exchange interactions in organic materials.
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Submitted 12 July, 2015;
originally announced July 2015.
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In-situ x-ray diffraction and the evolution of polarization during the growth of ferroelectric superlattices
Authors:
Benjamin Bein,
Hsiang-Chun Hsing,
Sara J. Callori,
John Sinsheimer,
Priya V. Chinta,
Randall L. Headrick,
Matthew Dawber
Abstract:
In epitaxially strained ferroelectric thin films and superlattices, the ferroelectric transition temperature can lie above the growth temperature. Ferroelectric polarization and domains should then evolve during the growth of a sample, and electrostatic boundary conditions may play an important role. In this work, ferroelectric domains, surface termination, average lattice parameter and bilayer th…
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In epitaxially strained ferroelectric thin films and superlattices, the ferroelectric transition temperature can lie above the growth temperature. Ferroelectric polarization and domains should then evolve during the growth of a sample, and electrostatic boundary conditions may play an important role. In this work, ferroelectric domains, surface termination, average lattice parameter and bilayer thickness are simultaneously monitored using in-situ synchrotron x-ray diffraction during the growth of BaTiO$_3$/SrTiO$_3$ superlattices on SrTiO$_3$ substrates by off-axis RF magnetron sputtering. The technique used allows for scan times substantially faster than the growth of a single layer of material. Effects of electric boundary conditions are investigated by growing the same superlattice alternatively on SrTiO$_3$ substrates and 20nm SrRuO$_3$ thin films on SrTiO$_3$ substrates. These experiments provide important insights into the formation and evolution of ferroelectric domains when the sample is ferroelectric during the growth process.
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Submitted 4 December, 2015; v1 submitted 26 February, 2015;
originally announced February 2015.
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Bimodal island size distribution in heteroepitaxial growth
Authors:
P. V. Chinta,
R. L. Headrick
Abstract:
A bimodal size distribution of two dimensional islands is inferred during interface formation in heteroepitaxial growth of Bismuth Ferrite on (001) oriented SrTiO3 by sputter deposition. Features observed by in-situ x-ray scattering are explained by a model where coalescence of islands determines the growth kinetics with negligible surface diffusion on SrTiO3. Small clusters maintain a compact sha…
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A bimodal size distribution of two dimensional islands is inferred during interface formation in heteroepitaxial growth of Bismuth Ferrite on (001) oriented SrTiO3 by sputter deposition. Features observed by in-situ x-ray scattering are explained by a model where coalescence of islands determines the growth kinetics with negligible surface diffusion on SrTiO3. Small clusters maintain a compact shape as they coalesce, while clusters beyond a critical size im**e to form large irregular connected islands and a population of smaller clusters forms in the spaces between the larger ones.
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Submitted 29 January, 2014;
originally announced January 2014.
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Fabrication and Characterization of Controllable Grain Boundary Arrays in Solution Processed Small Molecule Organic Semiconductor Films
Authors:
Songtao Wo,
Randall L. Headrick,
John E. Anthony
Abstract:
We have produced solution-processed thin films of 6,13-bis(triisopropyl-silylethynyl) pentacene with grain sizes from a few micrometers up to millimeter scale by lateral crystallization from a rectangular stylus. Grains are oriented along the crystallization direction, and the grain size transverse to the crystallization direction depends inversely on the writing speed, hence forming a regular arr…
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We have produced solution-processed thin films of 6,13-bis(triisopropyl-silylethynyl) pentacene with grain sizes from a few micrometers up to millimeter scale by lateral crystallization from a rectangular stylus. Grains are oriented along the crystallization direction, and the grain size transverse to the crystallization direction depends inversely on the writing speed, hence forming a regular array of oriented grain boundaries with controllable spacing. We utilize these controllable arrays to systematically study the role of large-angle grain boundaries in carrier transport and charge trap** in thin film transistors. The effective mobility scales with the grain size, leading to an estimate of the potential drop at individual large-angle grain boundaries of more than one volt. This result indicates that the structure of grain boundaries is not molecularly abrupt, which may be a general feature of solution processed small molecule organic semiconductor thin films where relatively high energy grain boundaries are typically formed. This may be due to the crystal Transient measurements after switching from positive to negative gate bias or between large and small negative gate bias reveal reversible charge trap** with time constants on the order of 10 s, and trap densities that are correlated with grain boundary density. We suggest that charge diffusion along grain boundaries and other defects is the rate determining mechanism of the reversible trap**.
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Submitted 9 February, 2012;
originally announced February 2012.
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Growth of macroscopic-area single crystal polyacene thin films on arbitrary substrates
Authors:
Randall L. Headrick,
Hua Zhou,
Binran Wang,
Yi** Wang,
Greggory P. Carpenter,
Alex C. Mayer,
Matthew Lloyd,
George G. Malliaras,
Alexander Kazimirov,
John E. Anthony
Abstract:
Organic electronic materials have potential applications in a number of low-cost, large area electronic devices such as flat panel displays and inexpensive solar panels. Small molecules in the series Anthracene, Tetracene, Pentacene, are model molecules for organic semiconductor thin films to be used as the active layers in such devices. This has motivated a number of studies of polyacene thin fil…
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Organic electronic materials have potential applications in a number of low-cost, large area electronic devices such as flat panel displays and inexpensive solar panels. Small molecules in the series Anthracene, Tetracene, Pentacene, are model molecules for organic semiconductor thin films to be used as the active layers in such devices. This has motivated a number of studies of polyacene thin film growth and structure. Although the majority of these studies rely on vapor-deposited films, solvent-based deposition of films with improved properties onto non-crystalline substrates is desired for industrial production of devices. Improved ordering in thin films will have a large impact on their electronic properties, since grain boundaries and other defects are detrimental to carrier mobilities and lifetimes. Thus, a long-standing challenge in this field is to prepare largearea single crystal films on arbitrary substrates. Here we demonstrate a solvent-based method to deposit thin films of organic semiconductors, which is very general. Anthracene thin films with single-crystal domain sizes exceeding 1x1 cm2 can be prepared on various substrates by the technique. Films of 6,13-bis(triisopropylsilylethynyl)pentacene are also demonstrated to have grain sizes larger than 2x2 mm2. In contrast, films produced by conventional means such as vapor deposition or spin coating are polycrystalline with micron-scale grain sizes. The general propensity of these small molecules towards crystalline order in an optimized solvent deposition process shows that there is great potential for thin films with improved properties. Films prepared by these methods will also be useful in exploring the limits of performance in organic thin film devices.
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Submitted 17 July, 2011;
originally announced July 2011.
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Spatially, Temporally and Polarization-Resolved Photoluminescence Exploration of Excitons in Crystalline Phthalocyanine Thin Films
Authors:
Naveen Rawat,
Zhenwen Pan,
Lane W. Manning,
Cody J. Lamarche,
Ishviene Cour,
Randall L. Headrick,
Rory Waterman,
Arthur R. Woll,
Madalina I. Furis
Abstract:
The lack of long range order in organic semiconductor thin films prevents the unveiling of the complete nature of excitons in optical experiments, because the diffraction limited beam diameters in the bandgap region far exceed typical crystalline grain sizes. Here we present spatially-, temporally- and polarization-resolved dual photoluminescence/linear dichroism microscopy experiments that invest…
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The lack of long range order in organic semiconductor thin films prevents the unveiling of the complete nature of excitons in optical experiments, because the diffraction limited beam diameters in the bandgap region far exceed typical crystalline grain sizes. Here we present spatially-, temporally- and polarization-resolved dual photoluminescence/linear dichroism microscopy experiments that investigate exciton states within a single crystalline grain in solution-processed phthalocyanine thin films. These experiments reveal the existence of a delocalized singlet exciton, polarized along the high mobility axis in this quasi-1D electronic system. The strong delocalized π orbitals overlap controlled by the molecular stacking along the high mobility axis is responsible for breaking the radiative recombination selection rules. Using our linear dichroism scanning microscopy setup we further established a rotation of molecules (i.e. a structural phase transition) that occurs above 100 K prevents the observation of this exciton at room temperature.
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Submitted 20 April, 2015; v1 submitted 7 July, 2011;
originally announced July 2011.
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Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition
Authors:
Lan Zhou,
Yi** Wang,
Minghao Li,
Randall L. Headrick
Abstract:
In low-temperature pulsed growth two-dimensional islands form and coarsen into ~10 nm features. The islands produce well-defined displaced x-ray diffraction peaks due to relaxation of anisotropic surface stress of the (2x1) reconstruction with expansion and contraction present in orthogonal directions. The relaxation carries over into multilevel islands, suggesting that domains in subsequent layer…
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In low-temperature pulsed growth two-dimensional islands form and coarsen into ~10 nm features. The islands produce well-defined displaced x-ray diffraction peaks due to relaxation of anisotropic surface stress of the (2x1) reconstruction with expansion and contraction present in orthogonal directions. The relaxation carries over into multilevel islands, suggesting that domains in subsequent layers form metastable stress domains. We infer that the island distribution differs from continuous deposition, enhancing the population of monodisperded islands exhibiting anisotropic relaxation.
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Submitted 21 July, 2011; v1 submitted 1 January, 2011;
originally announced January 2011.
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Pressure-dependent transition from atoms to nanoparticles in magnetron sputtering: Effect on WSi2 film roughness and stress
Authors:
Lan Zhou,
Yi** Wang,
Hua Zhou,
Minghao Li,
Randall L. Headrick,
Kimberly MacArthur,
Bing Shi,
Ray Conley,
Albert T. Macrander
Abstract:
We report on the transition between two regimes from several-atom clusters to much larger nanoparticles in Ar magnetron sputter deposition of WSi2, and the effect of nanoparticles on the properties of amorphous thin films and multilayers. Sputter deposition of thin films is monitored by in situ x-ray scattering, including x-ray reflectivity and grazing incidence small angle x-ray scattering. The r…
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We report on the transition between two regimes from several-atom clusters to much larger nanoparticles in Ar magnetron sputter deposition of WSi2, and the effect of nanoparticles on the properties of amorphous thin films and multilayers. Sputter deposition of thin films is monitored by in situ x-ray scattering, including x-ray reflectivity and grazing incidence small angle x-ray scattering. The results show an abrupt transition at an Ar background pressure Pc; the transition is associated with the threshold for energetic particle thermalization, which is known to scale as the product of the Ar pressure and the working distance between the magnetron source and the substrate surface. Below Pc smooth films are produced, while above Pc roughness increases abruptly, consistent with a model in which particles aggregate in the deposition flux before reaching the growth surface. The results from WSi2 films are correlated with in situ measurement of stress in WSi2/Si multilayers, which exhibits a corresponding transition from compressive to tensile stress at Pc. The tensile stress is attributed to coalescence of nanoparticles and the elimination of nano-voids.
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Submitted 1 August, 2010; v1 submitted 15 May, 2010;
originally announced May 2010.
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Wavelength Tunability of Ion-bombardment Induced Ripples on Sapphire
Authors:
Hua Zhou,
Yi** Wang,
Lan Zhou,
Randall L. Headrick,
Ahmet S. Ozcan,
Yiyi Wang,
Gozde Ozaydin,
Karl F. Ludwig Jr.,
D. Peter Siddons
Abstract:
A study of ripple formation on sapphire surfaces by 300-2000 eV Ar+ ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range-nearl…
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A study of ripple formation on sapphire surfaces by 300-2000 eV Ar+ ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range-nearly two orders of magnitude-by changing the ion incidence angle. Within the linear theory regime, the ion induced viscous flow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30. In this model, relaxation is confined to a few-nm thick damaged surface layer. The behavior at high temperature suggests relaxation by surface diffusion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface diffusion or viscous flow relaxation.
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Submitted 8 August, 2006;
originally announced August 2006.
